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EVALLEDICL8201F1TOBO1 EVALLEDICL8201F1TOBO1 Infineon Technologies REF-ICL8201_GU10.pdf Description: REFERENCE DESIGN ICL8201 GU10
Part Status: Obsolete
Outputs and Type: 1 Non-Isolated Output
Supplied Contents: Board(s)
Utilized IC / Part: ICL8201, IPU50R3K0CE
Current - Output / Channel: 180mA
Voltage - Input: 90 ~ 265 VAC
Voltage - Output: 33V ~ 47V
Packaging: Box
Produkt ist nicht verfügbar
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ICL8201XTSA1 ICL8201XTSA1 Infineon Technologies ICL8201.pdf Description: IC LED DRVR OFFL TRIAC SOT23-6
Voltage - Supply (Max): 18V
Voltage - Supply (Min): 6V
Dimming: Triac
Supplier Device Package: PG-SOT23-6
Topology: Step-Down (Buck)
Internal Switch(s): Yes
Current - Output / Channel: 400mA
Applications: Lighting
Operating Temperature: -25°C ~ 150°C (TJ)
Type: AC DC Offline Switcher
Frequency: 40kHz ~ 150kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 27V
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPD042P03L3GATMA1 IPD042P03L3GATMA1 Infineon Technologies Infineon-IPD042P03L3_G-DS-v02_02-en.pdf?fileId=db3a30431d8a6b3c011d90c8c6e60425 Description: MOSFET P-CH 30V 70A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 70A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12400 pF @ 15 V
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IPD053N08N3GATMA1 IPD053N08N3GATMA1 Infineon Technologies Infineon-IPD053N08N3-DS-v01_01-en.pdf?fileId=db3a304317a748360117cf072cf31ce8 Description: MOSFET N-CH 80V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 40 V
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IPD068P03L3GATMA1 IPD068P03L3GATMA1 Infineon Technologies Infineon-IPD068P03L3_G-DS-v02_01-en.pdf?fileId=db3a30432313ff5e01232cc234f07d94 Description: MOSFET P-CH 30V 70A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 70A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 150µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7720 pF @ 15 V
auf Bestellung 6851 Stücke:
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IPD200N15N3GATMA1 IPD200N15N3GATMA1 Infineon Technologies Infineon-IPD_BIP_200N15N3-DS-v02_07-en.pdf?fileId=db3a304319c6f18c0119cd1cc23279be Description: MOSFET N-CH 150V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V
auf Bestellung 28911 Stücke:
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IPD60R1K4C6ATMA1 IPD60R1K4C6ATMA1 Infineon Technologies Infineon-IPD60R1K4C6-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129eef00aaa05e5 Description: MOSFET N-CH 600V 3.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
auf Bestellung 210 Stücke:
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IPD60R380C6ATMA1 IPD60R380C6ATMA1 Infineon Technologies Infineon-IPD60R380C6-DS-v02_02-EN.pdf?fileId=db3a30433ecb86d4013ed661f42d23f2 Description: MOSFET N-CH 600V 10.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
auf Bestellung 15689 Stücke:
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10+2.9 EUR
100+1.98 EUR
500+1.58 EUR
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IPD60R450E6ATMA1 IPD60R450E6ATMA1 Infineon Technologies Infineon--DS-v02_02-EN.pdf?fileId=db3a30432a14dd54012a196a77652b30 Description: MOSFET N-CH 600V 9.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 3.4A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
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IPD60R520C6ATMA1 IPD60R520C6ATMA1 Infineon Technologies Infineon-IPD60R520C6-DS-v02_02-EN.pdf?fileId=db3a30433ee50ba8013eeb469c71164a Description: MOSFET N-CH 600V 8.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
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IPD60R600C6ATMA1 IPD60R600C6ATMA1 Infineon Technologies Infineon-IPD60R600C6-DS-v02_02-EN.pdf?fileId=db3a30433ee50ba8013eef7f5937259b Description: MOSFET N-CH 600V 7.3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
auf Bestellung 3617 Stücke:
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IPD60R950C6ATMA1 IPD60R950C6ATMA1 Infineon Technologies Infineon-IPD60R950C6-DS-v02_02-en.pdf?fileId=db3a30433ee50ba8013ef00bb8dd26c6 Description: MOSFET N-CH 600V 4.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
auf Bestellung 3419 Stücke:
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11+1.95 EUR
100+1.3 EUR
500+1.02 EUR
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IPD78CN10NGATMA1 IPD78CN10NGATMA1 Infineon Technologies Infineon-IPP80CN10N-DS-v01_91-en.pdf?fileId=db3a304412b407950112b42c2aaf468d Description: MOSFET N-CH 100V 13A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 12µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 50 V
auf Bestellung 10918 Stücke:
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10+2.28 EUR
15+1.43 EUR
100+0.94 EUR
500+0.73 EUR
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IPD90R1K2C3ATMA1 IPD90R1K2C3ATMA1 Infineon Technologies IPD90R1K2C3.pdf Description: MOSFET N-CH 900V 5.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Produkt ist nicht verfügbar
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SPD08N50C3ATMA1 SPD08N50C3ATMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 500V 7.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
auf Bestellung 1371 Stücke:
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SAE800GXLLA1 SAE800GXLLA1 Infineon Technologies SAE_800.pdf Description: IC AUDIO TONE PROCESSOR DSO8-1
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Audio Tone Processor
Interface: Logic
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 18V
Specifications: 100kHz
Applications: Audio Systems
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Number of Channels: 1
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IPU60R1K0CEAKMA1 IPU60R1K0CEAKMA1 Infineon Technologies Infineon-IPU60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c897d71e96 Description: MOSFET N-CH 600V TO-251-3
Produkt ist nicht verfügbar
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IPU60R1K5CEAKMA1 IPU60R1K5CEAKMA1 Infineon Technologies Infineon-IPU60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7e3ff711ea8 Description: MOSFET N-CH 600V TO-251-3
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TLE4476DATMA2 TLE4476DATMA2 Infineon Technologies TLE4476.pdf Description: IC REG LINEAR 3.3V/5V TO252-5-11
Output Configuration: Positive
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Current - Output: 350mA, 430mA
Current - Supply (Max): 13 mA
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Voltage Dropout (Max): -, 0.7V @ 330mA
PSRR: 60dB (20Hz ~ 20kHz), 60dB (20Hz ~ 20kHz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V, 5V
Supplier Device Package: PG-TO252-5-11
Number of Regulators: 2
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 150 µA
Operating Temperature: -40°C ~ 170°C
Produkt ist nicht verfügbar
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IPP60R040C7XKSA1 IPP60R040C7XKSA1 Infineon Technologies Infineon-IPP60R040C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d479ac7c56893 Description: MOSFET N-CH 600V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.24mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
auf Bestellung 1000 Stücke:
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IPZ60R040C7XKSA1 IPZ60R040C7XKSA1 Infineon Technologies Infineon-IPZ60R040C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d4c9376864008 Description: MOSFET N-CH 600V 50A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.24mA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
auf Bestellung 698 Stücke:
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1+30.59 EUR
10+28.12 EUR
100+23.75 EUR
500+21.12 EUR
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IPZ60R099C7XKSA1 IPZ60R099C7XKSA1 Infineon Technologies Infineon-IPZ60R099C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d4ca5bbae4110 Description: MOSFET N-CH 600V 22A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
Produkt ist nicht verfügbar
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TLE4274GV85ATMA2 TLE4274GV85ATMA2 Infineon Technologies Infineon-TLE4274-DataSheet-v01_71-EN.pdf?fileId=8ac78c8c93dda25b0194f49872dd00d1 Description: IC REG LIN 8.5V 400MA TO263-3-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 8.5V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Grade: Automotive
Qualification: AEC-Q100
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TLE4274GV10ATMA2 TLE4274GV10ATMA2 Infineon Technologies Infineon-TLE4274-DataSheet-v01_71-EN.pdf?fileId=8ac78c8c93dda25b0194f49872dd00d1 Description: IC REG LIN 10V 400MA TO263-3-1
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 30 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 60dB (100Hz)
Part Status: Active
Voltage - Output (Min/Fixed): 10V
Supplier Device Package: PG-TO263-3-1
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE4291EXUMA2 TLE4291EXUMA2 Infineon Technologies Infineon-TLE4291E-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101595fa0b06f1fce Description: IC REG LIN 5V 450MA PG-SSOP-14-2
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-2
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset, Watchdog
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Grade: Automotive
Qualification: AEC-Q100
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IPI120N06S402AKSA2 IPI120N06S402AKSA2 Infineon Technologies IPx120N06S4-02.pdf Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO262-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPI90N06S4L04AKSA2 IPI90N06S4L04AKSA2 Infineon Technologies Infineon-I90N06S4L_04-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038d111570ce3 Description: MOSFET N-CH 60V 90A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
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IPI80N06S4L07AKSA2 IPI80N06S4L07AKSA2 Infineon Technologies Infineon-IPP_B_I80N06S4L_07-DS-v01_00-en%5B1%5D.pdf?fileId=db3a304320d39d590121aa3ae68d1c80 Description: MOSFET N-CH 60V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY15B102N-ZS60XAT CY15B102N-ZS60XAT Infineon Technologies Infineon-CY15B102N_2-Mbit_(128K_X_16)_Automotive_F-RAM_Memory-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf917749ed&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 2MBIT PARALLEL 44TSOP II
Produkt ist nicht verfügbar
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CY15B128Q-SXAT CY15B128Q-SXAT Infineon Technologies Infineon-CY15B128Q_128_Kbit_(16K_8)_Automotive_Serial_(SPI)_FRAM-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf864e49e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirI Description: IC FRAM 128KBIT SPI 40MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 16K x 8
Memory Interface: SPI
Supplier Device Package: 8-SOIC
Memory Format: FRAM
Clock Frequency: 40 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY15B256J-SXA CY15B256J-SXA Infineon Technologies Infineon-CY15B256J_256_Kbit_(32K_8)_Automotive_Serial_(I2C)_F_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf69af49d8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 256KBIT I2C 3.4MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 130 ns
Memory Interface: I2C
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: FRAM
Clock Frequency: 3.4 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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25+12.85 EUR
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582+11.48 EUR
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CY15B256Q-SXA CY15B256Q-SXA Infineon Technologies Infineon-CY15B256Q_256_KBIT_(32K_X_8)_AUTOMOTIVE-A_SERIAL_(SPI)_F-RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c6279f3b42a8b Description: IC FRAM 256KBIT SPI 40MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Memory Interface: SPI
Supplier Device Package: 8-SOIC
Memory Format: FRAM
Clock Frequency: 40 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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CY5676 CY5676 Infineon Technologies Infineon-Quick_Start_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ef9a09b0f90&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: DEV KIT PROC BLE
Packaging: Bulk
For Use With/Related Products: PRoC™ BLE
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
Part Status: Obsolete
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10+27.55 EUR
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CY62167GE30-45ZXI CY62167GE30-45ZXI Infineon Technologies Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral& Description: IC SRAM 16MBIT PARALLEL 48TSOP I
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8, 1M x 16
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Active
Supplier Device Package: 48-TSOP I
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
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96+21.69 EUR
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576+20.31 EUR
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CY7C1315KV18-333BZXC CY7C1315KV18-333BZXC Infineon Technologies download Description: IC SRAM 18MBIT PARALLEL 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 512K x 36
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 333 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 18Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
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CY7S1061G30-10BVXI CY7S1061G30-10BVXI Infineon Technologies Infineon-CY7S1061G_CY7S1061GE_16-Mbit_(1_M_words_16_bit)_Static_RAM_with_Deep-Sleep_Feature_and_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec35ea53850&utm_source=cypress&utm_medium=referra Description: IC SRAM 16MBIT PARALLEL 48VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
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CY8CKIT-024 CY8CKIT-024 Infineon Technologies Infineon-CY8CKIT_024_CapSense(R)_Proximity_Shield_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ef1958d02ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: DEV KIT PROXIMITY SHIELD PSOC 4
Packaging: Bulk
Sensor Type: Proximity
Utilized IC / Part: PSoC® 4
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
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CY8CKIT-037 CY8CKIT-037 Infineon Technologies Infineon-CY8CKIT-037_PSoC_4_Motor_Control_Evaluation_Kit_User_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efa532a1027&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: EVAL BOARD FOR PSOC 4
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: PSoC® 4
Supplied Contents: Board(s), Cable(s), Power Supply, Accessories
Embedded: Yes, MCU, 8-Bit
Part Status: Active
Contents: Board(s), Cable(s), Power Supply, Accessories
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CY8CKIT-141 CY8CKIT-141 Infineon Technologies Infineon-PSoC_4_4200_BLE_Family_Datasheet_Programmable_System-on-Chip-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee5f2a26ddd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: DEV KIT PSOC 4 BLE SMA MODULE
Packaging: Bulk
For Use With/Related Products: PSoC® 4 BLE
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Utilized IC / Part: PSoC® 4 BLE
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CY8CKIT-143 CY8CKIT-143 Infineon Technologies download Description: DEV KIT PSOC 4 BLUETOOTH 4.1 BLE
Packaging: Bulk
For Use With/Related Products: PSoC® 4 BLE
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
Contents: Board(s)
Utilized IC / Part: PSoC® 4 BLE
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IPA60R125P6XKSA1 IPA60R125P6XKSA1 Infineon Technologies Infineon-IPX60R125P6-DS-v02_00-en%5B1%5D.pdf?fileId=5546d461464245d301468af2915b667f Description: MOSFET N-CH 600V 30A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 960µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
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IPA60R160P6XKSA1 IPA60R160P6XKSA1 Infineon Technologies Infineon-IPX60R160P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415efd27711e0b Description: MOSFET N-CH 600V 23.8A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3 Full Pack
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IPA60R230P6XKSA1 IPA60R230P6XKSA1 Infineon Technologies Infineon-IPX60R230P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415f8ab7321ec1 Description: MOSFET N-CH 600V 16.8A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4.5V @ 530µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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IPA60R280P6XKSA1 IPA60R280P6XKSA1 Infineon Technologies Infineon-IPX60R280P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e269e3e0021 Description: MOSFET N-CH 600V 13.8A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4.5V @ 430µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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5+4.86 EUR
50+2.3 EUR
100+2.18 EUR
500+1.67 EUR
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IPA60R380P6XKSA1 IPA60R380P6XKSA1 Infineon Technologies Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203 Description: MOSFET N-CH 600V 10.6A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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50+2.08 EUR
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IPP60R099P6XKSA1 IPP60R099P6XKSA1 Infineon Technologies Infineon-IPA60R099P6-DS-v02_01-EN.pdf?fileId=5546d461464245d301468f0e6251673a Description: MOSFET N-CH 600V 37.9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V
Produkt ist nicht verfügbar
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IPP60R160P6XKSA1 IPP60R160P6XKSA1 Infineon Technologies Infineon-IPX60R160P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415efd27711e0b Description: MOSFET N-CH 600V 23.8A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP60R230P6XKSA1 IPP60R230P6XKSA1 Infineon Technologies Infineon-IPX60R230P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415f8ab7321ec1 Description: MOSFET N-CH 600V 16.8A TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4.5V @ 530µA
Power Dissipation (Max): 126W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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IPP60R330P6XKSA1 IPP60R330P6XKSA1 Infineon Technologies IPx60R330P6.pdf Description: MOSFET N-CH 600V 12A TO220-3
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4.5V @ 370µA
Power Dissipation (Max): 93W (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
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IPP60R380P6XKSA1 IPP60R380P6XKSA1 Infineon Technologies Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203 Description: MOSFET N-CH 600V 10.6A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPW60R099P6XKSA1 IPW60R099P6XKSA1 Infineon Technologies Infineon-IPA60R099P6-DS-v02_01-EN.pdf?fileId=5546d461464245d301468f0e6251673a Description: MOSFET N-CH 600V 37.9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V
auf Bestellung 240 Stücke:
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2+11.1 EUR
30+6.26 EUR
120+5.2 EUR
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IPW60R125P6XKSA1 IPW60R125P6XKSA1 Infineon Technologies Infineon-IPX60R125P6-DS-v02_00-en%5B1%5D.pdf?fileId=5546d461464245d301468af2915b667f Description: MOSFET N-CH 600V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 960µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
auf Bestellung 352 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.71 EUR
30+4.88 EUR
120+4.03 EUR
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IPW60R160P6FKSA1 IPW60R160P6FKSA1 Infineon Technologies Infineon-IPX60R160P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415efd27711e0b Description: MOSFET N-CH 600V 23.8A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 197 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.77 EUR
30+4.3 EUR
120+3.53 EUR
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IPW60R280P6FKSA1 IPW60R280P6FKSA1 Infineon Technologies Infineon-IPX60R280P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e269e3e0021 Description: MOSFET N-CH 600V 13.8A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 430µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 134 Stücke:
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4+5.87 EUR
30+3.18 EUR
120+2.58 EUR
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IPD60R380P6ATMA1 IPD60R380P6ATMA1 Infineon Technologies Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203 Description: MOSFET N-CH 600V 10.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
auf Bestellung 2500 Stücke:
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2500+1.11 EUR
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IPL60R180P6AUMA1 IPL60R180P6AUMA1 Infineon Technologies DS_IPL60R180P6_2_0.pdf?fileId=5546d4614755559a01479131b3626146 Description: MOSFET N-CH 600V 22.4A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
auf Bestellung 3000 Stücke:
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3000+2.46 EUR
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IPL60R210P6AUMA1 IPL60R210P6AUMA1 Infineon Technologies DS_IPL60R210P6_2_0.pdf?fileId=5546d4614755559a0147914e48e3616b Description: MOSFET N-CH 600V 19.2A 4VSON
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPL60R255P6AUMA1 IPL60R255P6AUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 600V 15.9A 4VSON
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 530µA
Power Dissipation (Max): 126W (Tc)
Rds On (Max) @ Id, Vgs: 255mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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IPL60R360P6SATMA1 IPL60R360P6SATMA1 Infineon Technologies DS_IPL60R360P6S_2_0.pdf?fileId=5546d4614755559a01475e68ce13047c Description: MOSFET N-CH 600V 11.3A 8THINPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 4.5A, 10V
Power Dissipation (Max): 89.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 370µA
Supplier Device Package: 8-ThinPak (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V
Produkt ist nicht verfügbar
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IPL60R650P6SATMA1 IPL60R650P6SATMA1 Infineon Technologies DS_IPL60R650P6S_2_0.pdf?fileId=5546d4614755559a014758fc7b850037 Description: MOSFET N-CH 600V 6.7A 8THINPAK
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: 8-ThinPak (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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EVALLEDICL8201F1TOBO1 REF-ICL8201_GU10.pdf
EVALLEDICL8201F1TOBO1
Hersteller: Infineon Technologies
Description: REFERENCE DESIGN ICL8201 GU10
Part Status: Obsolete
Outputs and Type: 1 Non-Isolated Output
Supplied Contents: Board(s)
Utilized IC / Part: ICL8201, IPU50R3K0CE
Current - Output / Channel: 180mA
Voltage - Input: 90 ~ 265 VAC
Voltage - Output: 33V ~ 47V
Packaging: Box
Produkt ist nicht verfügbar
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ICL8201XTSA1 ICL8201.pdf
ICL8201XTSA1
Hersteller: Infineon Technologies
Description: IC LED DRVR OFFL TRIAC SOT23-6
Voltage - Supply (Max): 18V
Voltage - Supply (Min): 6V
Dimming: Triac
Supplier Device Package: PG-SOT23-6
Topology: Step-Down (Buck)
Internal Switch(s): Yes
Current - Output / Channel: 400mA
Applications: Lighting
Operating Temperature: -25°C ~ 150°C (TJ)
Type: AC DC Offline Switcher
Frequency: 40kHz ~ 150kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 27V
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPD042P03L3GATMA1 Infineon-IPD042P03L3_G-DS-v02_02-en.pdf?fileId=db3a30431d8a6b3c011d90c8c6e60425
IPD042P03L3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 70A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 70A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12400 pF @ 15 V
auf Bestellung 11891 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.46 EUR
10+2.86 EUR
100+1.94 EUR
500+1.55 EUR
1000+1.43 EUR
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IPD053N08N3GATMA1 Infineon-IPD053N08N3-DS-v01_01-en.pdf?fileId=db3a304317a748360117cf072cf31ce8
IPD053N08N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 40 V
auf Bestellung 5623 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.57 EUR
10+3.61 EUR
100+2.49 EUR
500+2 EUR
1000+1.9 EUR
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IPD068P03L3GATMA1 Infineon-IPD068P03L3_G-DS-v02_01-en.pdf?fileId=db3a30432313ff5e01232cc234f07d94
IPD068P03L3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 70A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 70A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 150µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7720 pF @ 15 V
auf Bestellung 6851 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.31 EUR
13+1.64 EUR
100+1.15 EUR
500+0.9 EUR
1000+0.82 EUR
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IPD200N15N3GATMA1 Infineon-IPD_BIP_200N15N3-DS-v02_07-en.pdf?fileId=db3a304319c6f18c0119cd1cc23279be
IPD200N15N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V
auf Bestellung 28911 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.93 EUR
10+3.84 EUR
100+2.65 EUR
500+2.15 EUR
1000+2.07 EUR
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IPD60R1K4C6ATMA1 Infineon-IPD60R1K4C6-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129eef00aaa05e5
IPD60R1K4C6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.59 EUR
13+1.64 EUR
100+1.08 EUR
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IPD60R380C6ATMA1 Infineon-IPD60R380C6-DS-v02_02-EN.pdf?fileId=db3a30433ecb86d4013ed661f42d23f2
IPD60R380C6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 10.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
auf Bestellung 15689 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.52 EUR
10+2.9 EUR
100+1.98 EUR
500+1.58 EUR
1000+1.45 EUR
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IPD60R450E6ATMA1 Infineon--DS-v02_02-EN.pdf?fileId=db3a30432a14dd54012a196a77652b30
IPD60R450E6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 9.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 3.4A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
Produkt ist nicht verfügbar
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IPD60R520C6ATMA1 Infineon-IPD60R520C6-DS-v02_02-EN.pdf?fileId=db3a30433ee50ba8013eeb469c71164a
IPD60R520C6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 8.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
Produkt ist nicht verfügbar
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IPD60R600C6ATMA1 Infineon-IPD60R600C6-DS-v02_02-EN.pdf?fileId=db3a30433ee50ba8013eef7f5937259b
IPD60R600C6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 7.3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
auf Bestellung 3617 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.64 EUR
10+2.32 EUR
100+1.56 EUR
500+1.24 EUR
1000+1.13 EUR
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IPD60R950C6ATMA1 Infineon-IPD60R950C6-DS-v02_02-en.pdf?fileId=db3a30433ee50ba8013ef00bb8dd26c6
IPD60R950C6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 4.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
auf Bestellung 3419 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.08 EUR
11+1.95 EUR
100+1.3 EUR
500+1.02 EUR
1000+0.93 EUR
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IPD78CN10NGATMA1 Infineon-IPP80CN10N-DS-v01_91-en.pdf?fileId=db3a304412b407950112b42c2aaf468d
IPD78CN10NGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 13A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 12µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 50 V
auf Bestellung 10918 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.28 EUR
15+1.43 EUR
100+0.94 EUR
500+0.73 EUR
1000+0.65 EUR
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IPD90R1K2C3ATMA1 IPD90R1K2C3.pdf
IPD90R1K2C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 900V 5.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Produkt ist nicht verfügbar
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SPD08N50C3ATMA1 fundamentals-of-power-semiconductors
SPD08N50C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 7.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
auf Bestellung 1371 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.74 EUR
10+3.05 EUR
100+2.09 EUR
500+1.69 EUR
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SAE800GXLLA1 SAE_800.pdf
SAE800GXLLA1
Hersteller: Infineon Technologies
Description: IC AUDIO TONE PROCESSOR DSO8-1
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Audio Tone Processor
Interface: Logic
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 18V
Specifications: 100kHz
Applications: Audio Systems
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Number of Channels: 1
Produkt ist nicht verfügbar
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IPU60R1K0CEAKMA1 Infineon-IPU60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c897d71e96
IPU60R1K0CEAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V TO-251-3
Produkt ist nicht verfügbar
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IPU60R1K5CEAKMA1 Infineon-IPU60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7e3ff711ea8
IPU60R1K5CEAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V TO-251-3
Produkt ist nicht verfügbar
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TLE4476DATMA2 TLE4476.pdf
TLE4476DATMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V/5V TO252-5-11
Output Configuration: Positive
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Current - Output: 350mA, 430mA
Current - Supply (Max): 13 mA
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Voltage Dropout (Max): -, 0.7V @ 330mA
PSRR: 60dB (20Hz ~ 20kHz), 60dB (20Hz ~ 20kHz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V, 5V
Supplier Device Package: PG-TO252-5-11
Number of Regulators: 2
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 150 µA
Operating Temperature: -40°C ~ 170°C
Produkt ist nicht verfügbar
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IPP60R040C7XKSA1 Infineon-IPP60R040C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d479ac7c56893
IPP60R040C7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.24mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+22.6 EUR
50+12.71 EUR
100+11.76 EUR
500+10.15 EUR
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IPZ60R040C7XKSA1 Infineon-IPZ60R040C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d4c9376864008
IPZ60R040C7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 50A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.24mA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
auf Bestellung 698 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+30.59 EUR
10+28.12 EUR
100+23.75 EUR
500+21.12 EUR
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IPZ60R099C7XKSA1 Infineon-IPZ60R099C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d4ca5bbae4110
IPZ60R099C7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 22A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
Produkt ist nicht verfügbar
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TLE4274GV85ATMA2 Infineon-TLE4274-DataSheet-v01_71-EN.pdf?fileId=8ac78c8c93dda25b0194f49872dd00d1
TLE4274GV85ATMA2
Hersteller: Infineon Technologies
Description: IC REG LIN 8.5V 400MA TO263-3-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 8.5V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE4274GV10ATMA2 Infineon-TLE4274-DataSheet-v01_71-EN.pdf?fileId=8ac78c8c93dda25b0194f49872dd00d1
TLE4274GV10ATMA2
Hersteller: Infineon Technologies
Description: IC REG LIN 10V 400MA TO263-3-1
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 30 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 60dB (100Hz)
Part Status: Active
Voltage - Output (Min/Fixed): 10V
Supplier Device Package: PG-TO263-3-1
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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TLE4291EXUMA2 Infineon-TLE4291E-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101595fa0b06f1fce
TLE4291EXUMA2
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 450MA PG-SSOP-14-2
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-2
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset, Watchdog
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPI120N06S402AKSA2 IPx120N06S4-02.pdf
IPI120N06S402AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO262-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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IPI90N06S4L04AKSA2 Infineon-I90N06S4L_04-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038d111570ce3
IPI90N06S4L04AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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IPI80N06S4L07AKSA2 Infineon-IPP_B_I80N06S4L_07-DS-v01_00-en%5B1%5D.pdf?fileId=db3a304320d39d590121aa3ae68d1c80
IPI80N06S4L07AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY15B102N-ZS60XAT Infineon-CY15B102N_2-Mbit_(128K_X_16)_Automotive_F-RAM_Memory-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf917749ed&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY15B102N-ZS60XAT
Hersteller: Infineon Technologies
Description: IC FRAM 2MBIT PARALLEL 44TSOP II
Produkt ist nicht verfügbar
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CY15B128Q-SXAT Infineon-CY15B128Q_128_Kbit_(16K_8)_Automotive_Serial_(SPI)_FRAM-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf864e49e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirI
CY15B128Q-SXAT
Hersteller: Infineon Technologies
Description: IC FRAM 128KBIT SPI 40MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 16K x 8
Memory Interface: SPI
Supplier Device Package: 8-SOIC
Memory Format: FRAM
Clock Frequency: 40 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY15B256J-SXA Infineon-CY15B256J_256_Kbit_(32K_8)_Automotive_Serial_(I2C)_F_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf69af49d8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY15B256J-SXA
Hersteller: Infineon Technologies
Description: IC FRAM 256KBIT I2C 3.4MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 130 ns
Memory Interface: I2C
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: FRAM
Clock Frequency: 3.4 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
auf Bestellung 769 Stücke:
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2+14.27 EUR
10+13.26 EUR
25+12.85 EUR
97+12.26 EUR
194+11.95 EUR
291+11.78 EUR
582+11.48 EUR
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CY15B256Q-SXA Infineon-CY15B256Q_256_KBIT_(32K_X_8)_AUTOMOTIVE-A_SERIAL_(SPI)_F-RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c6279f3b42a8b
CY15B256Q-SXA
Hersteller: Infineon Technologies
Description: IC FRAM 256KBIT SPI 40MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Memory Interface: SPI
Supplier Device Package: 8-SOIC
Memory Format: FRAM
Clock Frequency: 40 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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CY5676 Infineon-Quick_Start_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ef9a09b0f90&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY5676
Hersteller: Infineon Technologies
Description: DEV KIT PROC BLE
Packaging: Bulk
For Use With/Related Products: PRoC™ BLE
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
Part Status: Obsolete
auf Bestellung 15 Stücke:
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AnzahlPrivatkunde
1+30.45 EUR
10+27.55 EUR
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CY62167GE30-45ZXI Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral&
CY62167GE30-45ZXI
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8, 1M x 16
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Active
Supplier Device Package: 48-TSOP I
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
auf Bestellung 587 Stücke:
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1+25.3 EUR
10+23.49 EUR
25+22.76 EUR
96+21.69 EUR
192+21.16 EUR
288+20.85 EUR
576+20.31 EUR
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CY7C1315KV18-333BZXC download
CY7C1315KV18-333BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 512K x 36
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 333 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 18Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
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CY7S1061G30-10BVXI Infineon-CY7S1061G_CY7S1061GE_16-Mbit_(1_M_words_16_bit)_Static_RAM_with_Deep-Sleep_Feature_and_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec35ea53850&utm_source=cypress&utm_medium=referra
CY7S1061G30-10BVXI
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 2400 Stücke
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CY8CKIT-024 Infineon-CY8CKIT_024_CapSense(R)_Proximity_Shield_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ef1958d02ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8CKIT-024
Hersteller: Infineon Technologies
Description: DEV KIT PROXIMITY SHIELD PSOC 4
Packaging: Bulk
Sensor Type: Proximity
Utilized IC / Part: PSoC® 4
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
auf Bestellung 3 Stücke:
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1+119.82 EUR
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CY8CKIT-037 Infineon-CY8CKIT-037_PSoC_4_Motor_Control_Evaluation_Kit_User_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efa532a1027&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8CKIT-037
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR PSOC 4
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: PSoC® 4
Supplied Contents: Board(s), Cable(s), Power Supply, Accessories
Embedded: Yes, MCU, 8-Bit
Part Status: Active
Contents: Board(s), Cable(s), Power Supply, Accessories
auf Bestellung 8 Stücke:
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1+478.95 EUR
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CY8CKIT-141 Infineon-PSoC_4_4200_BLE_Family_Datasheet_Programmable_System-on-Chip-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee5f2a26ddd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8CKIT-141
Hersteller: Infineon Technologies
Description: DEV KIT PSOC 4 BLE SMA MODULE
Packaging: Bulk
For Use With/Related Products: PSoC® 4 BLE
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Utilized IC / Part: PSoC® 4 BLE
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+37.03 EUR
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CY8CKIT-143 download
CY8CKIT-143
Hersteller: Infineon Technologies
Description: DEV KIT PSOC 4 BLUETOOTH 4.1 BLE
Packaging: Bulk
For Use With/Related Products: PSoC® 4 BLE
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
Contents: Board(s)
Utilized IC / Part: PSoC® 4 BLE
Produkt ist nicht verfügbar
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IPA60R125P6XKSA1 Infineon-IPX60R125P6-DS-v02_00-en%5B1%5D.pdf?fileId=5546d461464245d301468af2915b667f
IPA60R125P6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 30A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 960µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
Produkt ist nicht verfügbar
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IPA60R160P6XKSA1 Infineon-IPX60R160P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415efd27711e0b
IPA60R160P6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 23.8A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3 Full Pack
auf Bestellung 388 Stücke:
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AnzahlPrivatkunde
4+6.09 EUR
50+3.07 EUR
100+2.77 EUR
Mindestbestellmenge: 4 Stücke
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IPA60R230P6XKSA1 Infineon-IPX60R230P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415f8ab7321ec1
IPA60R230P6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 16.8A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4.5V @ 530µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 90 Stücke:
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AnzahlPrivatkunde
4+5.45 EUR
50+2.25 EUR
Mindestbestellmenge: 4 Stücke
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IPA60R280P6XKSA1 Infineon-IPX60R280P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e269e3e0021
IPA60R280P6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13.8A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4.5V @ 430µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 826 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.86 EUR
50+2.3 EUR
100+2.18 EUR
500+1.67 EUR
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IPA60R380P6XKSA1 Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203
IPA60R380P6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 10.6A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 273 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.3 EUR
50+2.08 EUR
100+1.87 EUR
Mindestbestellmenge: 5 Stücke
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IPP60R099P6XKSA1 Infineon-IPA60R099P6-DS-v02_01-EN.pdf?fileId=5546d461464245d301468f0e6251673a
IPP60R099P6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 37.9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V
Produkt ist nicht verfügbar
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IPP60R160P6XKSA1 Infineon-IPX60R160P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415efd27711e0b
IPP60R160P6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 23.8A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP60R230P6XKSA1 Infineon-IPX60R230P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415f8ab7321ec1
IPP60R230P6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 16.8A TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4.5V @ 530µA
Power Dissipation (Max): 126W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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IPP60R330P6XKSA1 IPx60R330P6.pdf
IPP60R330P6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220-3
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4.5V @ 370µA
Power Dissipation (Max): 93W (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
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IPP60R380P6XKSA1 Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203
IPP60R380P6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 10.6A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPW60R099P6XKSA1 Infineon-IPA60R099P6-DS-v02_01-EN.pdf?fileId=5546d461464245d301468f0e6251673a
IPW60R099P6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 37.9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.1 EUR
30+6.26 EUR
120+5.2 EUR
Mindestbestellmenge: 2 Stücke
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IPW60R125P6XKSA1 Infineon-IPX60R125P6-DS-v02_00-en%5B1%5D.pdf?fileId=5546d461464245d301468af2915b667f
IPW60R125P6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 960µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
auf Bestellung 352 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.71 EUR
30+4.88 EUR
120+4.03 EUR
Mindestbestellmenge: 3 Stücke
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IPW60R160P6FKSA1 Infineon-IPX60R160P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415efd27711e0b
IPW60R160P6FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 23.8A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 197 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.77 EUR
30+4.3 EUR
120+3.53 EUR
Mindestbestellmenge: 3 Stücke
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IPW60R280P6FKSA1 Infineon-IPX60R280P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e269e3e0021
IPW60R280P6FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13.8A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 430µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 134 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.87 EUR
30+3.18 EUR
120+2.58 EUR
Mindestbestellmenge: 4 Stücke
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IPD60R380P6ATMA1 Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203
IPD60R380P6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 10.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.11 EUR
Mindestbestellmenge: 2500 Stücke
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IPL60R180P6AUMA1 DS_IPL60R180P6_2_0.pdf?fileId=5546d4614755559a01479131b3626146
IPL60R180P6AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 22.4A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+2.46 EUR
Mindestbestellmenge: 3000 Stücke
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IPL60R210P6AUMA1 DS_IPL60R210P6_2_0.pdf?fileId=5546d4614755559a0147914e48e3616b
IPL60R210P6AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 19.2A 4VSON
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IPL60R255P6AUMA1 fundamentals-of-power-semiconductors
IPL60R255P6AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 15.9A 4VSON
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 530µA
Power Dissipation (Max): 126W (Tc)
Rds On (Max) @ Id, Vgs: 255mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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IPL60R360P6SATMA1 DS_IPL60R360P6S_2_0.pdf?fileId=5546d4614755559a01475e68ce13047c
IPL60R360P6SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 11.3A 8THINPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 4.5A, 10V
Power Dissipation (Max): 89.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 370µA
Supplier Device Package: 8-ThinPak (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IPL60R650P6SATMA1 DS_IPL60R650P6S_2_0.pdf?fileId=5546d4614755559a014758fc7b850037
IPL60R650P6SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 6.7A 8THINPAK
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: 8-ThinPak (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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