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CY7C65214D-32LTXIT CY7C65214D-32LTXIT Infineon Technologies Infineon-CY7C65214D_USB-Serial_Dual_Channel_SPI_Bridge-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea3022730e Description: USB Full-Speed Peripherals
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Function: Bridge
Interface: GPIO, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V, 2V ~ 3.45V, 3.15V ~ 5.25V, 4.35V ~ 5.5V
Current - Supply: 18mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C4045LQI-S412T CY8C4045LQI-S412T Infineon Technologies Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file Description: IC MCU 32BIT 32KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
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CY8C4045LQI-S412T CY8C4045LQI-S412T Infineon Technologies Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file Description: IC MCU 32BIT 32KB FLASH 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
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100+4.24 EUR
250+4.02 EUR
500+3.61 EUR
1000+3.05 EUR
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IRS2112STRPBF IRS2112STRPBF Infineon Technologies irs2112pbf.pdf?fileId=5546d462533600a401535676702827b5 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
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IRS2112STRPBF IRS2112STRPBF Infineon Technologies irs2112pbf.pdf?fileId=5546d462533600a401535676702827b5 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
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10+2.80 EUR
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100+2.29 EUR
250+2.16 EUR
500+2.09 EUR
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IKQ75N120CS6XKSA1 IKQ75N120CS6XKSA1 Infineon Technologies Infineon-IKQ75N120CS6-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb01638802035216c6 Description: IGBT TRENCH FS 1200V 150A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 440 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/300ns
Switching Energy: 5.15mJ (on), 2.95mJ (off)
Test Condition: 600V, 75A, 4Ohm, 15V
Gate Charge: 530 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 880 W
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TLE75080ESDXUMA1 TLE75080ESDXUMA1 Infineon Technologies Infineon-SPIDER+SPI_Driver_Family_PB-PB-v01_00-EN.pdf?fileId=5546d462525dbac40152cf7456c17b4d Description: IC PWR DRVR N-CHAN 1:8 TSDSO-24
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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TLE75080ESDXUMA1 TLE75080ESDXUMA1 Infineon Technologies Infineon-SPIDER+SPI_Driver_Family_PB-PB-v01_00-EN.pdf?fileId=5546d462525dbac40152cf7456c17b4d Description: IC PWR DRVR N-CHAN 1:8 TSDSO-24
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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250+2.07 EUR
500+1.99 EUR
1000+1.93 EUR
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IKFW90N60EH3XKSA1 IKFW90N60EH3XKSA1 Infineon Technologies Infineon-IKFW90N60EH3-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0163016e976f32b5 Description: IGBT TRENCH FS 600V 77A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/210ns
Switching Energy: 2.65mJ (on), 1.3mJ (off)
Test Condition: 400V, 75A, 5Ohm, 15V
Gate Charge: 440 nC
Part Status: Active
Current - Collector (Ic) (Max): 77 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 178 W
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IHW40N135R5XKSA1 IHW40N135R5XKSA1 Infineon Technologies Infineon-IHW40N135R5-DS-v02_02-EN.pdf?fileId=5546d462636cc8fb0163b0fe63f5326a Description: IGBT TRENCH FS 1350V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/410ns
Switching Energy: 2mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 394 W
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IHW30N160R5XKSA1 IHW30N160R5XKSA1 Infineon Technologies Infineon-IHW30N160R5-DS-v02_01-EN.pdf?fileId=5546d462677d0f460167ac8d680e1923 Description: IGBT 1600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 30A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: -/290ns
Switching Energy: -, 350µJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 205 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 263 W
auf Bestellung 3231 Stücke:
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IHW30N120R5XKSA1 IHW30N120R5XKSA1 Infineon Technologies Infineon-IHW30N120R5-DS-v02_02-EN.pdf?fileId=5546d462636cc8fb0163b0f4ba9630ec Description: IGBT TRENCH FS 1200V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/330ns
Switching Energy: 1.1mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 235 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 330 W
auf Bestellung 280 Stücke:
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S25HL512TDPNHM010 S25HL512TDPNHM010 Infineon Technologies en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24 Description: IC FLASH 512MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRFR48ZTRL AUIRFR48ZTRL Infineon Technologies auirfr48z.pdf?fileId=5546d462533600a4015355b5c0f51492 Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
Produkt ist nicht verfügbar
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AUIRFR48Z AUIRFR48Z Infineon Technologies auirfr48z.pdf?fileId=5546d462533600a4015355b5c0f51492 Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
Produkt ist nicht verfügbar
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IPB77N06S212ATMA2 IPB77N06S212ATMA2 Infineon Technologies Infineon-IPP_B77N06S2_12-DS-v01_00-en.pdf?fileId=db3a304412b407950112b4333a115ab8&ack=t Description: MOSFET N-CH 55V 77A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 38A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Produkt ist nicht verfügbar
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BTS712204ESPXUMA1 BTS712204ESPXUMA1 Infineon Technologies Infineon-BTS71220-4ESP-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837a74b1ab30f5 Description: SPOC PG-TSDSO-24
Features: Load Discharge, PWM Input, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: PWM, SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9.5mOhm, 22.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 3A, 3A, 5A, 5A
Ratio - Input:Output: 1:4
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTS712204ESPXUMA1 BTS712204ESPXUMA1 Infineon Technologies Infineon-BTS71220-4ESP-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837a74b1ab30f5 Description: SPOC PG-TSDSO-24
Features: Load Discharge, PWM Input, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: PWM, SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9.5mOhm, 22.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 3A, 3A, 5A, 5A
Ratio - Input:Output: 1:4
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 2995 Stücke:
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10+4.07 EUR
25+3.73 EUR
100+3.36 EUR
250+3.19 EUR
500+3.08 EUR
1000+3.00 EUR
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BTS70802EPZXUMA1 BTS70802EPZXUMA1 Infineon Technologies Infineon-BTS7080-2EPZ-DataSheet-v01_10-EN.pdf?fileId=5546d4626df6ee62016dfe5ac16211be Description: PROFET PG-TSDSO-14
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20.9mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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BTS70802EPZXUMA1 BTS70802EPZXUMA1 Infineon Technologies Infineon-BTS7080-2EPZ-DataSheet-v01_10-EN.pdf?fileId=5546d4626df6ee62016dfe5ac16211be Description: PROFET PG-TSDSO-14
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20.9mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BTS70081EPZXUMA1 BTS70081EPZXUMA1 Infineon Technologies Infineon-BTS7008-1EPZ-DataSheet-v01_10-EN.pdf?fileId=5546d4626df6ee62016dfe5acd1511c1 Description: PROFET PG-TSDSO-14
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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TC1791F512F240EPABKXUMA2 TC1791F512F240EPABKXUMA2 Infineon Technologies Infineon-TC1791-DS-v01_01-en.pdf?fileId=db3a30433580b3710135afe8eb475643 Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 192K x 8
Core Processor: TriCore™
Data Converters: A/D 8x10b, 44x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 3.63V
Connectivity: ASC, CANbus, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 128
DigiKey Programmable: Not Verified
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CY9AF004BGL-G107MJK1ERE1 Infineon Technologies Description: MM MCU
Packaging: Tape & Reel (TR)
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFR4620PBF IRFR4620PBF Infineon Technologies irfr4620pbf.pdf?fileId=5546d462533600a4015356323ae920f7 description Description: MOSFET N-CH 200V 24A D-PAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
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AUIRLR120N AUIRLR120N Infineon Technologies AUIRLR120N.pdf Description: MOSFET N-CH 100V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Qualification: AEC-Q101
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BCR135E6433HTMA1 BCR135E6433HTMA1 Infineon Technologies bcr135series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f8b054a0289 Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
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MB91F467DBPFVS-GS-N2K5E2 MB91F467DBPFVS-GS-N2K5E2 Infineon Technologies Description: IC MCU 32B 1.0625MB FLASH 208QFP
Packaging: Tray
Package / Case: 208-BQFP
Mounting Type: Surface Mount
Speed: 96MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 72K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR60 RISC
Data Converters: A/D 24x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 208-QFP (28x28)
Part Status: Discontinued at Digi-Key
Number of I/O: 170
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB91F467DBPFVS-GSK5E2 Infineon Technologies Description: IC AUTO MCU 208HQFP
Packaging: Tray
Package / Case: 208-BQFP
Mounting Type: Surface Mount
Speed: 96MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 72K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR60 RISC
Data Converters: A/D 24x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 208-QFP (28x28)
Part Status: Obsolete
Number of I/O: 170
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY91F467DBPFVS-GS-UJE2 CY91F467DBPFVS-GS-UJE2 Infineon Technologies Description: IC MCU 32B 1.0625MB FLASH 208QFP
Packaging: Tray
Package / Case: 208-BQFP
Mounting Type: Surface Mount
Speed: 96MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 72K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR60 RISC
Data Converters: A/D 24x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 208-QFP (28x28)
Part Status: Obsolete
Number of I/O: 170
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BGSX24MU16E6327XUSA1 BGSX24MU16E6327XUSA1 Infineon Technologies Infineon-BGSX24MU16-DataSheet-v02_01-EN.pdf?fileId=5546d4627448fb2b017468b01dad7214 Description: IC RF SWITCH DP4T 5GHZ ULGA16-1
Packaging: Cut Tape (CT)
Package / Case: 16-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: GSM, LTE, W-CDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.4V
Insertion Loss: 1dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 5GHz
Isolation: 34dB
Supplier Device Package: PG-ULGA-16-1
IIP3: 77dBm
Part Status: Active
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BGSX33M5U16E6327XTSA1 BGSX33M5U16E6327XTSA1 Infineon Technologies Infineon-BGSX33M5U16-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ff9f022017fff919e78155d Description: IC RF SWITCH 3P3T 7.125GHZ
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Circuit: 3P3T
RF Type: 5G, GSM, LTE, WCDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Insertion Loss: 1.02dB
Frequency Range: 600MHz ~ 7.125GHz
Test Frequency: 5.925GHz ~ 7.125GHz
Isolation: 33dB
Part Status: Active
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BGSX33M5U16E6327XTSA1 BGSX33M5U16E6327XTSA1 Infineon Technologies Infineon-BGSX33M5U16-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ff9f022017fff919e78155d Description: IC RF SWITCH 3P3T 7.125GHZ
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Circuit: 3P3T
RF Type: 5G, GSM, LTE, WCDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Insertion Loss: 1.02dB
Frequency Range: 600MHz ~ 7.125GHz
Test Frequency: 5.925GHz ~ 7.125GHz
Isolation: 33dB
Part Status: Active
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PASCO2V01XUMA1 Infineon Technologies Description: SENSOR CARBON DIOXIDE I2C OUTPUT
Packaging: Tape & Reel (TR)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Operating Temperature: 0°C ~ 50°C
Voltage - Supply: 3V ~ 3.6V, 10.8V ~ 13.2V
Current - Supply: 800µA, 6.1mA
Part Status: Discontinued at Digi-Key
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S6J351CHTBSC20000 S6J351CHTBSC20000 Infineon Technologies Infineon-S6J3510_Series_32-bit_Arm_Cortex-R5F_TRAVEO_T1G_Microcontroller-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee44a026ae6 Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 132MHz
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 40x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (16x16)
Part Status: Active
Number of I/O: 94
Program Memory Size: 2.112M x 8
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S6J3429HUBSV20000 S6J3429HUBSV20000 Infineon Technologies Infineon-S6J3400_SERIES_32-bit_Arm_Cortex-R5F_Traveo_Microcontroller-AdditionalTechnicalInformation-v15_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee26a6968ea Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 832KB (832K x 8)
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 56x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 144
RAM Size: 92K x 8
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S6J3429HVBSV20000 S6J3429HVBSV20000 Infineon Technologies Infineon-S6J3400_SERIES_32-bit_Arm_Cortex-R5F_Traveo_Microcontroller-AdditionalTechnicalInformation-v15_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee26a6968ea Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 832KB (832K x 8)
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 56x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 144
RAM Size: 92K x 8
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IPB180N03S4L01ATMA1 IPB180N03S4L01ATMA1 Infineon Technologies Infineon-IPB180N03S4L_01-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304324fc7f9a0125120e409b199f&ack=t Description: MOSFET N-CH 30V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 140µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB180N03S4L01ATMA1 IPB180N03S4L01ATMA1 Infineon Technologies Infineon-IPB180N03S4L_01-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304324fc7f9a0125120e409b199f&ack=t Description: MOSFET N-CH 30V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 140µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPP80N04S4L04AKSA1 IPP80N04S4L04AKSA1 Infineon Technologies Infineon-IPP_B_I80N04S4L_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c780c375e1e&ack=t Description: MOSFET N-CH 40V 80A TO220-3-1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPB80N04S204ATMA2 IPB80N04S204ATMA2 Infineon Technologies Infineon-IPP_B_I80N04S2-DS-v01_00-en.pdf?fileId=db3a304412b407950112b42b914f4556&ack=t Description: MOSFET N-CH 40V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPB80N04S204ATMA2 IPB80N04S204ATMA2 Infineon Technologies Infineon-IPP_B_I80N04S2-DS-v01_00-en.pdf?fileId=db3a304412b407950112b42b914f4556&ack=t Description: MOSFET N-CH 40V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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CY8C4128LQI-BL553 CY8C4128LQI-BL553 Infineon Technologies Infineon-PSoC_4_PSoC_4100_BLE_Family_Datasheet_Programmable_System-on-Chip-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee5e6f46dbe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Description: IC RF TXRX+MCU BLE 56QFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 8kB ROM, 32kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA ~ 21.5mA
Data Rate (Max): 8Mbps
Current - Transmitting: 12.5mA ~ 20mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
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MB89925PF-G-166-BNDE1 Infineon Technologies Description: IC MCU 8BIT 16KB MROM 80PQFP
Packaging: Tray
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Obsolete
Number of I/O: 69
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C21534B-24PVXIT CY8C21534B-24PVXIT Infineon Technologies download Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Active
Number of I/O: 24
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1353G-100AXC CY7C1353G-100AXC Infineon Technologies Infineon-CY7C1353G_4-Mbit_(256_K_18)_Flow-Through_SRAM_with_NoBL_Architecture-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0f83335a2 Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Part Status: Active
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 256K x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1041CV33-10BAJXET CY7C1041CV33-10BAJXET Infineon Technologies Infineon-CY7C1041CV33_Automotive_4-Mbit_(256_K_16)_Static_RAM-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecab2cc43b0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr Description: IC SRAM 4MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (7x8.5)
Part Status: Discontinued at Digi-Key
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB39A136PFT-G-BND-ERE1 MB39A136PFT-G-BND-ERE1 Infineon Technologies download Description: IC REG CTRLR BUCK 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 500kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V
Supplier Device Package: 24-TSSOP
Synchronous Rectifier: Yes
Control Features: Current Limit, Soft Start
Output Phases: 2
Duty Cycle (Max): 80%
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 2
Produkt ist nicht verfügbar
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MB39A136PFT-G-BND-ERE1 MB39A136PFT-G-BND-ERE1 Infineon Technologies download Description: IC REG CTRLR BUCK 24TSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 500kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V
Supplier Device Package: 24-TSSOP
Synchronous Rectifier: Yes
Control Features: Current Limit, Soft Start
Output Phases: 2
Duty Cycle (Max): 80%
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 2
Produkt ist nicht verfügbar
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T590N16TOFXPSA1 T590N16TOFXPSA1 Infineon Technologies Infineon-T590N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ff9583d65be9 Description: SCR MODULE 1.8KV 1250A DO-200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 590 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1250 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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T640N16TOFXPSA1 T640N16TOFXPSA1 Infineon Technologies Infineon-T640N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863803806534a Description: SCR MODULE 1800V 1250A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 644 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1250 A
Voltage - Off State: 1.8 kV
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1+214.14 EUR
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FS400R07A1E3S7BOMA1 FS400R07A1E3S7BOMA1 Infineon Technologies Infineon-FS400R07A1E3_S7-DS-v03_02-EN.pdf?fileId=5546d46262b31d2e0163019334ad33a3 Description: IGBT MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRID1-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 705 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 400A
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FM25V02A-DGQTR FM25V02A-DGQTR Infineon Technologies Infineon-FM25V02A_256_Kbit_(32K_8)_Serial_(SPI)_F_RAM_with_Extended_Temperature-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8f7554166&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integrati Description: IC FRAM 256KBIT SPI 40MHZ 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (4x4.5)
Part Status: Active
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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DD89N14KHPSA1 DD89N14KHPSA1 Infineon Technologies INFNS29284-1.pdf?t.download=true&u=5oefqw Description: DIODE MODULE GP 1400V 89A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 89A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1400 V
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MB2198-111-E Infineon Technologies Description: TOOL KIT
Packaging: Bulk
Supplied Contents: Board(s)
Part Status: Obsolete
Produkt ist nicht verfügbar
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FS75R07U1E4BPSA1 FS75R07U1E4BPSA1 Infineon Technologies Infineon-FS75R07U1E4-DS-v03_00-en_de.pdf?fileId=db3a30433d68e984013d86f25a270efe Description: IGBT MOD 650V 100A 275W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 275 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
Produkt ist nicht verfügbar
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IPD100N04S4L02ATMA1 IPD100N04S4L02ATMA1 Infineon Technologies Infineon-IPD100N04S4_02-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c8301be5e3f Description: MOSFET N-CHANNEL_30/40V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 95µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPD100N04S4L02ATMA1 IPD100N04S4L02ATMA1 Infineon Technologies Infineon-IPD100N04S4_02-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c8301be5e3f Description: MOSFET N-CHANNEL_30/40V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 95µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2086 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.00 EUR
10+2.57 EUR
100+1.75 EUR
500+1.41 EUR
1000+1.29 EUR
Mindestbestellmenge: 5
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PEB3265FV1.3 PEB3265FV1.3 Infineon Technologies INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw Description: SLIC FILTER
Packaging: Bulk
Part Status: Active
auf Bestellung 640 Stücke:
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57+9.43 EUR
Mindestbestellmenge: 57
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IRS2890DSTRPBF IRS2890DSTRPBF Infineon Technologies Infineon-IRS2890DS-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad6fbc8a4bf4 Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-14-903
Rise / Fall Time (Typ): 85ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 220mA, 480mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRS2890DSTRPBF IRS2890DSTRPBF Infineon Technologies Infineon-IRS2890DS-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad6fbc8a4bf4 Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-14-903
Rise / Fall Time (Typ): 85ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 220mA, 480mA
Part Status: Active
DigiKey Programmable: Not Verified
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8+2.27 EUR
11+1.66 EUR
25+1.51 EUR
100+1.34 EUR
250+1.26 EUR
500+1.21 EUR
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CY7C65214D-32LTXIT Infineon-CY7C65214D_USB-Serial_Dual_Channel_SPI_Bridge-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea3022730e
CY7C65214D-32LTXIT
Hersteller: Infineon Technologies
Description: USB Full-Speed Peripherals
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Function: Bridge
Interface: GPIO, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V, 2V ~ 3.45V, 3.15V ~ 5.25V, 4.35V ~ 5.5V
Current - Supply: 18mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C4045LQI-S412T Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file
CY8C4045LQI-S412T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.89 EUR
Mindestbestellmenge: 2500
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CY8C4045LQI-S412T Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file
CY8C4045LQI-S412T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.77 EUR
10+5.18 EUR
25+4.89 EUR
100+4.24 EUR
250+4.02 EUR
500+3.61 EUR
1000+3.05 EUR
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IRS2112STRPBF irs2112pbf.pdf?fileId=5546d462533600a401535676702827b5
IRS2112STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.02 EUR
Mindestbestellmenge: 1000
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IRS2112STRPBF irs2112pbf.pdf?fileId=5546d462533600a401535676702827b5
IRS2112STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2989 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.78 EUR
10+2.80 EUR
25+2.56 EUR
100+2.29 EUR
250+2.16 EUR
500+2.09 EUR
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IKQ75N120CS6XKSA1 Infineon-IKQ75N120CS6-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb01638802035216c6
IKQ75N120CS6XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 150A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 440 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/300ns
Switching Energy: 5.15mJ (on), 2.95mJ (off)
Test Condition: 600V, 75A, 4Ohm, 15V
Gate Charge: 530 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 880 W
auf Bestellung 2012 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.91 EUR
30+9.44 EUR
120+8.02 EUR
510+7.39 EUR
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TLE75080ESDXUMA1 Infineon-SPIDER+SPI_Driver_Family_PB-PB-v01_00-EN.pdf?fileId=5546d462525dbac40152cf7456c17b4d
TLE75080ESDXUMA1
Hersteller: Infineon Technologies
Description: IC PWR DRVR N-CHAN 1:8 TSDSO-24
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.86 EUR
Mindestbestellmenge: 3000
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TLE75080ESDXUMA1 Infineon-SPIDER+SPI_Driver_Family_PB-PB-v01_00-EN.pdf?fileId=5546d462525dbac40152cf7456c17b4d
TLE75080ESDXUMA1
Hersteller: Infineon Technologies
Description: IC PWR DRVR N-CHAN 1:8 TSDSO-24
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 5582 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.63 EUR
10+2.68 EUR
25+2.45 EUR
100+2.19 EUR
250+2.07 EUR
500+1.99 EUR
1000+1.93 EUR
Mindestbestellmenge: 5
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IKFW90N60EH3XKSA1 Infineon-IKFW90N60EH3-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0163016e976f32b5
IKFW90N60EH3XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 77A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/210ns
Switching Energy: 2.65mJ (on), 1.3mJ (off)
Test Condition: 400V, 75A, 5Ohm, 15V
Gate Charge: 440 nC
Part Status: Active
Current - Collector (Ic) (Max): 77 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 178 W
auf Bestellung 244 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.98 EUR
30+12.65 EUR
120+10.82 EUR
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IHW40N135R5XKSA1 Infineon-IHW40N135R5-DS-v02_02-EN.pdf?fileId=5546d462636cc8fb0163b0fe63f5326a
IHW40N135R5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1350V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/410ns
Switching Energy: 2mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 394 W
auf Bestellung 263 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.55 EUR
30+4.80 EUR
120+3.98 EUR
Mindestbestellmenge: 3
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IHW30N160R5XKSA1 Infineon-IHW30N160R5-DS-v02_01-EN.pdf?fileId=5546d462677d0f460167ac8d680e1923
IHW30N160R5XKSA1
Hersteller: Infineon Technologies
Description: IGBT 1600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 30A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: -/290ns
Switching Energy: -, 350µJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 205 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 263 W
auf Bestellung 3231 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.13 EUR
30+4.56 EUR
120+3.78 EUR
510+3.20 EUR
1020+3.03 EUR
Mindestbestellmenge: 3
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IHW30N120R5XKSA1 Infineon-IHW30N120R5-DS-v02_02-EN.pdf?fileId=5546d462636cc8fb0163b0f4ba9630ec
IHW30N120R5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/330ns
Switching Energy: 1.1mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 235 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 330 W
auf Bestellung 280 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.85 EUR
30+3.79 EUR
120+3.12 EUR
Mindestbestellmenge: 3
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S25HL512TDPNHM010 en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24
S25HL512TDPNHM010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRFR48ZTRL auirfr48z.pdf?fileId=5546d462533600a4015355b5c0f51492
AUIRFR48ZTRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
Produkt ist nicht verfügbar
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AUIRFR48Z auirfr48z.pdf?fileId=5546d462533600a4015355b5c0f51492
AUIRFR48Z
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
Produkt ist nicht verfügbar
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IPB77N06S212ATMA2 Infineon-IPP_B77N06S2_12-DS-v01_00-en.pdf?fileId=db3a304412b407950112b4333a115ab8&ack=t
IPB77N06S212ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 77A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 38A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Produkt ist nicht verfügbar
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BTS712204ESPXUMA1 Infineon-BTS71220-4ESP-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837a74b1ab30f5
BTS712204ESPXUMA1
Hersteller: Infineon Technologies
Description: SPOC PG-TSDSO-24
Features: Load Discharge, PWM Input, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: PWM, SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9.5mOhm, 22.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 3A, 3A, 5A, 5A
Ratio - Input:Output: 1:4
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTS712204ESPXUMA1 Infineon-BTS71220-4ESP-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837a74b1ab30f5
BTS712204ESPXUMA1
Hersteller: Infineon Technologies
Description: SPOC PG-TSDSO-24
Features: Load Discharge, PWM Input, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: PWM, SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9.5mOhm, 22.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 3A, 3A, 5A, 5A
Ratio - Input:Output: 1:4
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 2995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.40 EUR
10+4.07 EUR
25+3.73 EUR
100+3.36 EUR
250+3.19 EUR
500+3.08 EUR
1000+3.00 EUR
Mindestbestellmenge: 4
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BTS70802EPZXUMA1 Infineon-BTS7080-2EPZ-DataSheet-v01_10-EN.pdf?fileId=5546d4626df6ee62016dfe5ac16211be
BTS70802EPZXUMA1
Hersteller: Infineon Technologies
Description: PROFET PG-TSDSO-14
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20.9mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.54 EUR
Mindestbestellmenge: 3000
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BTS70802EPZXUMA1 Infineon-BTS7080-2EPZ-DataSheet-v01_10-EN.pdf?fileId=5546d4626df6ee62016dfe5ac16211be
BTS70802EPZXUMA1
Hersteller: Infineon Technologies
Description: PROFET PG-TSDSO-14
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20.9mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.38 EUR
10+3.03 EUR
25+2.86 EUR
100+2.44 EUR
250+2.29 EUR
500+2.00 EUR
1000+1.66 EUR
Mindestbestellmenge: 6
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BTS70081EPZXUMA1 Infineon-BTS7008-1EPZ-DataSheet-v01_10-EN.pdf?fileId=5546d4626df6ee62016dfe5acd1511c1
BTS70081EPZXUMA1
Hersteller: Infineon Technologies
Description: PROFET PG-TSDSO-14
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 5965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.24 EUR
10+2.39 EUR
25+2.17 EUR
100+1.94 EUR
250+1.83 EUR
500+1.76 EUR
1000+1.70 EUR
Mindestbestellmenge: 6
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TC1791F512F240EPABKXUMA2 Infineon-TC1791-DS-v01_01-en.pdf?fileId=db3a30433580b3710135afe8eb475643
TC1791F512F240EPABKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 192K x 8
Core Processor: TriCore™
Data Converters: A/D 8x10b, 44x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 3.63V
Connectivity: ASC, CANbus, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 128
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9AF004BGL-G107MJK1ERE1
Hersteller: Infineon Technologies
Description: MM MCU
Packaging: Tape & Reel (TR)
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFR4620PBF description irfr4620pbf.pdf?fileId=5546d462533600a4015356323ae920f7
IRFR4620PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 24A D-PAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Produkt ist nicht verfügbar
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AUIRLR120N AUIRLR120N.pdf
AUIRLR120N
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BCR135E6433HTMA1 bcr135series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f8b054a0289
BCR135E6433HTMA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MB91F467DBPFVS-GS-N2K5E2
MB91F467DBPFVS-GS-N2K5E2
Hersteller: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLASH 208QFP
Packaging: Tray
Package / Case: 208-BQFP
Mounting Type: Surface Mount
Speed: 96MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 72K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR60 RISC
Data Converters: A/D 24x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 208-QFP (28x28)
Part Status: Discontinued at Digi-Key
Number of I/O: 170
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB91F467DBPFVS-GSK5E2
Hersteller: Infineon Technologies
Description: IC AUTO MCU 208HQFP
Packaging: Tray
Package / Case: 208-BQFP
Mounting Type: Surface Mount
Speed: 96MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 72K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR60 RISC
Data Converters: A/D 24x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 208-QFP (28x28)
Part Status: Obsolete
Number of I/O: 170
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY91F467DBPFVS-GS-UJE2
CY91F467DBPFVS-GS-UJE2
Hersteller: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLASH 208QFP
Packaging: Tray
Package / Case: 208-BQFP
Mounting Type: Surface Mount
Speed: 96MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 72K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR60 RISC
Data Converters: A/D 24x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 208-QFP (28x28)
Part Status: Obsolete
Number of I/O: 170
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BGSX24MU16E6327XUSA1 Infineon-BGSX24MU16-DataSheet-v02_01-EN.pdf?fileId=5546d4627448fb2b017468b01dad7214
BGSX24MU16E6327XUSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH DP4T 5GHZ ULGA16-1
Packaging: Cut Tape (CT)
Package / Case: 16-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: GSM, LTE, W-CDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.4V
Insertion Loss: 1dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 5GHz
Isolation: 34dB
Supplier Device Package: PG-ULGA-16-1
IIP3: 77dBm
Part Status: Active
auf Bestellung 4407 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
11+1.65 EUR
25+1.56 EUR
100+1.43 EUR
250+1.35 EUR
500+1.30 EUR
1000+1.24 EUR
Mindestbestellmenge: 10
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BGSX33M5U16E6327XTSA1 Infineon-BGSX33M5U16-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ff9f022017fff919e78155d
BGSX33M5U16E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH 3P3T 7.125GHZ
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Circuit: 3P3T
RF Type: 5G, GSM, LTE, WCDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Insertion Loss: 1.02dB
Frequency Range: 600MHz ~ 7.125GHz
Test Frequency: 5.925GHz ~ 7.125GHz
Isolation: 33dB
Part Status: Active
Produkt ist nicht verfügbar
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BGSX33M5U16E6327XTSA1 Infineon-BGSX33M5U16-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ff9f022017fff919e78155d
BGSX33M5U16E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH 3P3T 7.125GHZ
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Circuit: 3P3T
RF Type: 5G, GSM, LTE, WCDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Insertion Loss: 1.02dB
Frequency Range: 600MHz ~ 7.125GHz
Test Frequency: 5.925GHz ~ 7.125GHz
Isolation: 33dB
Part Status: Active
auf Bestellung 4244 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.27 EUR
10+1.96 EUR
25+1.84 EUR
100+1.69 EUR
250+1.60 EUR
500+1.54 EUR
1000+1.48 EUR
Mindestbestellmenge: 8
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PASCO2V01XUMA1
Hersteller: Infineon Technologies
Description: SENSOR CARBON DIOXIDE I2C OUTPUT
Packaging: Tape & Reel (TR)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Operating Temperature: 0°C ~ 50°C
Voltage - Supply: 3V ~ 3.6V, 10.8V ~ 13.2V
Current - Supply: 800µA, 6.1mA
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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S6J351CHTBSC20000 Infineon-S6J3510_Series_32-bit_Arm_Cortex-R5F_TRAVEO_T1G_Microcontroller-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee44a026ae6
S6J351CHTBSC20000
Hersteller: Infineon Technologies
Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 132MHz
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 40x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (16x16)
Part Status: Active
Number of I/O: 94
Program Memory Size: 2.112M x 8
Produkt ist nicht verfügbar
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S6J3429HUBSV20000 Infineon-S6J3400_SERIES_32-bit_Arm_Cortex-R5F_Traveo_Microcontroller-AdditionalTechnicalInformation-v15_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee26a6968ea
S6J3429HUBSV20000
Hersteller: Infineon Technologies
Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 832KB (832K x 8)
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 56x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 144
RAM Size: 92K x 8
Produkt ist nicht verfügbar
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S6J3429HVBSV20000 Infineon-S6J3400_SERIES_32-bit_Arm_Cortex-R5F_Traveo_Microcontroller-AdditionalTechnicalInformation-v15_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee26a6968ea
S6J3429HVBSV20000
Hersteller: Infineon Technologies
Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 832KB (832K x 8)
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 56x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 144
RAM Size: 92K x 8
Produkt ist nicht verfügbar
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IPB180N03S4L01ATMA1 Infineon-IPB180N03S4L_01-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304324fc7f9a0125120e409b199f&ack=t
IPB180N03S4L01ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 140µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB180N03S4L01ATMA1 Infineon-IPB180N03S4L_01-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304324fc7f9a0125120e409b199f&ack=t
IPB180N03S4L01ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 140µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPP80N04S4L04AKSA1 Infineon-IPP_B_I80N04S4L_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c780c375e1e&ack=t
IPP80N04S4L04AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO220-3-1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB80N04S204ATMA2 Infineon-IPP_B_I80N04S2-DS-v01_00-en.pdf?fileId=db3a304412b407950112b42b914f4556&ack=t
IPB80N04S204ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.41 EUR
Mindestbestellmenge: 1000
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IPB80N04S204ATMA2 Infineon-IPP_B_I80N04S2-DS-v01_00-en.pdf?fileId=db3a304412b407950112b42b914f4556&ack=t
IPB80N04S204ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6388 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.76 EUR
10+4.45 EUR
100+3.14 EUR
500+2.58 EUR
Mindestbestellmenge: 3
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CY8C4128LQI-BL553 Infineon-PSoC_4_PSoC_4100_BLE_Family_Datasheet_Programmable_System-on-Chip-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee5e6f46dbe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
CY8C4128LQI-BL553
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 56QFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 8kB ROM, 32kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA ~ 21.5mA
Data Rate (Max): 8Mbps
Current - Transmitting: 12.5mA ~ 20mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.07 EUR
10+7.79 EUR
25+7.22 EUR
80+6.74 EUR
Mindestbestellmenge: 2
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MB89925PF-G-166-BNDE1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM 80PQFP
Packaging: Tray
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Obsolete
Number of I/O: 69
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C21534B-24PVXIT download
CY8C21534B-24PVXIT
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Active
Number of I/O: 24
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1353G-100AXC Infineon-CY7C1353G_4-Mbit_(256_K_18)_Flow-Through_SRAM_with_NoBL_Architecture-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0f83335a2
CY7C1353G-100AXC
Hersteller: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Part Status: Active
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 256K x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1041CV33-10BAJXET Infineon-CY7C1041CV33_Automotive_4-Mbit_(256_K_16)_Static_RAM-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecab2cc43b0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr
CY7C1041CV33-10BAJXET
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (7x8.5)
Part Status: Discontinued at Digi-Key
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB39A136PFT-G-BND-ERE1 download
MB39A136PFT-G-BND-ERE1
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 500kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V
Supplier Device Package: 24-TSSOP
Synchronous Rectifier: Yes
Control Features: Current Limit, Soft Start
Output Phases: 2
Duty Cycle (Max): 80%
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 2
Produkt ist nicht verfügbar
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MB39A136PFT-G-BND-ERE1 download
MB39A136PFT-G-BND-ERE1
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 24TSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 500kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V
Supplier Device Package: 24-TSSOP
Synchronous Rectifier: Yes
Control Features: Current Limit, Soft Start
Output Phases: 2
Duty Cycle (Max): 80%
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 2
Produkt ist nicht verfügbar
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T590N16TOFXPSA1 Infineon-T590N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ff9583d65be9
T590N16TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 1250A DO-200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 590 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1250 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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T640N16TOFXPSA1 Infineon-T640N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863803806534a
T640N16TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 1250A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 644 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1250 A
Voltage - Off State: 1.8 kV
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+214.14 EUR
12+185.21 EUR
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FS400R07A1E3S7BOMA1 Infineon-FS400R07A1E3_S7-DS-v03_02-EN.pdf?fileId=5546d46262b31d2e0163019334ad33a3
FS400R07A1E3S7BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRID1-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 705 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 400A
auf Bestellung 23 Stücke:
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Anzahl Preis
1+534.48 EUR
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FM25V02A-DGQTR Infineon-FM25V02A_256_Kbit_(32K_8)_Serial_(SPI)_F_RAM_with_Extended_Temperature-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8f7554166&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integrati
FM25V02A-DGQTR
Hersteller: Infineon Technologies
Description: IC FRAM 256KBIT SPI 40MHZ 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (4x4.5)
Part Status: Active
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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DD89N14KHPSA1 INFNS29284-1.pdf?t.download=true&u=5oefqw
DD89N14KHPSA1
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 1400V 89A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 89A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1400 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+182.07 EUR
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MB2198-111-E
Hersteller: Infineon Technologies
Description: TOOL KIT
Packaging: Bulk
Supplied Contents: Board(s)
Part Status: Obsolete
Produkt ist nicht verfügbar
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FS75R07U1E4BPSA1 Infineon-FS75R07U1E4-DS-v03_00-en_de.pdf?fileId=db3a30433d68e984013d86f25a270efe
FS75R07U1E4BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 100A 275W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 275 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
Produkt ist nicht verfügbar
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IPD100N04S4L02ATMA1 Infineon-IPD100N04S4_02-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c8301be5e3f
IPD100N04S4L02ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL_30/40V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 95µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPD100N04S4L02ATMA1 Infineon-IPD100N04S4_02-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c8301be5e3f
IPD100N04S4L02ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL_30/40V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 95µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2086 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.00 EUR
10+2.57 EUR
100+1.75 EUR
500+1.41 EUR
1000+1.29 EUR
Mindestbestellmenge: 5
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PEB3265FV1.3 INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw
PEB3265FV1.3
Hersteller: Infineon Technologies
Description: SLIC FILTER
Packaging: Bulk
Part Status: Active
auf Bestellung 640 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
57+9.43 EUR
Mindestbestellmenge: 57
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IRS2890DSTRPBF Infineon-IRS2890DS-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad6fbc8a4bf4
IRS2890DSTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-14-903
Rise / Fall Time (Typ): 85ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 220mA, 480mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRS2890DSTRPBF Infineon-IRS2890DS-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad6fbc8a4bf4
IRS2890DSTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-14-903
Rise / Fall Time (Typ): 85ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 220mA, 480mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 772 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.27 EUR
11+1.66 EUR
25+1.51 EUR
100+1.34 EUR
250+1.26 EUR
500+1.21 EUR
Mindestbestellmenge: 8
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