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PXE1610CDNG023XTMA1 PXE1610CDNG023XTMA1 Infineon Technologies Infineon-Multiphase_digital_controllers_PXE1_PXM1-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01736b7cd95b3c4a Description: PXE1610CDN - DIGITAL DUAL OUTPUT
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: Programmable
Mounting Type: Surface Mount
Number of Outputs: 6
Voltage - Input: 3V ~ 3.6V
Operating Temperature: -5°C ~ 85°C (TA)
Applications: Controller, Intel VR12.5
Supplier Device Package: 48-VQFN (6x6)
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BTG7016A1EPWXUMA1 BTG7016A1EPWXUMA1 Infineon Technologies Infineon-BTG7016A-1EPW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8caa022e018cee0efad71e67 Description: IC PWR SWITCH N-CHAN 1:1 14TSSOP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 18mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 6.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
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BTG7016A1EPWXUMA1 BTG7016A1EPWXUMA1 Infineon Technologies Infineon-BTG7016A-1EPW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8caa022e018cee0efad71e67 Description: IC PWR SWITCH N-CHAN 1:1 14TSSOP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 18mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 6.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
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7+2.89 EUR
10+2.13 EUR
25+1.94 EUR
100+1.73 EUR
250+1.63 EUR
500+1.57 EUR
1000+1.52 EUR
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FS100R12W2T7BOMA1 FS100R12W2T7BOMA1 Infineon Technologies Infineon-FS100R12W2T7-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f18ea895736e Description: LOW POWER EASY AG-EASY2B-1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 9 µA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
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FP15R12W1T7PB11BPSA1 FP15R12W1T7PB11BPSA1 Infineon Technologies Infineon-FP15R12W1T7P_B11-DataSheet-v00_10-EN.pdf?fileId=5546d46273a5366f01742686806765b2 Description: LOW POWER EASY AG-EASY1B-2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 µA
Input Capacitance (Cies) @ Vce: 2.82 nF @ 25 V
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FS25R12W1T7B11BOMA1 FS25R12W1T7B11BOMA1 Infineon Technologies Infineon-FS25R12W1T7_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f186359472e9 Description: IGBT MODULE LOW POWER EASY
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
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BCW60FFE6327HTSA1 BCW60FFE6327HTSA1 Infineon Technologies BCW60%2C%20BCX70%20Rev2007.pdf Description: TRANS NPN 32V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
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IDWD40E120D7XKSA1 IDWD40E120D7XKSA1 Infineon Technologies IDWD40E120D7_Rev1.00_12-15-23.pdf Description: DIODE STD 1200V 67A PGTO24722
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 155 ns
Technology: Standard
Current - Average Rectified (Io): 67A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 40 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
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30+3.75 EUR
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TLE5046ICPWM2ER100HALA1 Infineon Technologies tle5046icpwm2er100hala1 Description: TLE504HiEGWheSpeSenswidirectidet
Packaging: Bulk
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TLE50452IC50XTMA1 Infineon Technologies Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
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TLE50452IC100XTMA1 Infineon Technologies Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR2135JTRPBF IR2135JTRPBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
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IR2135JTRPBF IR2135JTRPBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Cut Tape (CT)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
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IR2136PBF IR2136PBF Infineon Technologies IRSDS12169-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 28DIP
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-PDIP
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IR21368STRPBF IR21368STRPBF Infineon Technologies IRSDS12169-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IR2131SPBF IR2131SPBF Infineon Technologies ir2131.pdf?fileId=5546d462533600a4015355c882d7169d description Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
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57+8.17 EUR
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SP370251160XTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: SENSOR TIRE PRESSURE DIGITAL
Packaging: Tape & Reel (TR)
Output Type: Digital
Operating Temperature: -40°C ~ 125°C
Sensor Type: Tire Pressure Monitoring (TPMS)
Produkt ist nicht verfügbar
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BSP149L6906HTSA1 BSP149L6906HTSA1 Infineon Technologies Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 400µA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BCX6810H6327XTSA1 BCX6810H6327XTSA1 Infineon Technologies bcx68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ef403903e7 Description: TRANS NPN 20V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BCX6810H6327XTSA1 BCX6810H6327XTSA1 Infineon Technologies bcx68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ef403903e7 Description: TRANS NPN 20V 1A PG-SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Qualification: AEC-Q101
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1731+0.29 EUR
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BCX6825H6327XTSA1 BCX6825H6327XTSA1 Infineon Technologies bcx68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ef403903e7 Description: TRANS NPN 20V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FF1200R17IP5PBPSA1 FF1200R17IP5PBPSA1 Infineon Technologies Infineon-FF1200R17IP5P-DataSheet-v03_00-EN.pdf?fileId=5546d4627448fb2b017457d84aae414b Description: IGBT
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 mA
Input Capacitance (Cies) @ Vce: 68 nF @ 25 V
auf Bestellung 570 Stücke:
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DF200R12KE3HOSA1 DF200R12KE3HOSA1 Infineon Technologies Infineon-DF200R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b431ab75550c Description: IGBT MODULE 1200V 1040W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1040 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
auf Bestellung 208 Stücke:
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FP100R12W3T7B11BPSA1 FP100R12W3T7B11BPSA1 Infineon Technologies Infineon-FP100R12W3T7_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b18b14a703900 Description: LOW POWER EASY
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY3B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
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3+167.82 EUR
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FF300R12KT3HOSA1 FF300R12KT3HOSA1 Infineon Technologies Infineon-FF300R12KT3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b4345e3e6019 Description: IGBT MOD 1200V 480A 1450W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
auf Bestellung 207 Stücke:
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3+196.64 EUR
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FP100R12KT4B11BOSA1 FP100R12KT4B11BOSA1 Infineon Technologies Infineon-FP100R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a3043156fd57301161a6b3faf1e18 Description: IGBT MOD 1200V 100A 515W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
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3+187.21 EUR
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BGSF18DM20E6327XUMA1 BGSF18DM20E6327XUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC RF SWITCH SP8T
Packaging: Bulk
Circuit: SP8T
RF Type: Cellular, 3G, GSM
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FF1800XTR17T2P5BPSA1 FF1800XTR17T2P5BPSA1 Infineon Technologies Infineon-FF1800XTR17T2P5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c4ca458f81d4c Description: XHP LV
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1800000 W
Current - Collector Cutoff (Max): 10 mA
Input Capacitance (Cies) @ Vce: 84000 pF @ 25 V
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CYW20738A2KML3G CYW20738A2KML3G Infineon Technologies BCM20738_RevC_Oct18%2C2016.pdf Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Tray
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -93dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.2V
Power - Output: 4dBm
Protocol: Bluetooth v4.0
Current - Receiving: 26.8mA
Data Rate (Max): 1Mbps
Current - Transmitting: 26.9mA
Supplier Device Package: 40-QFN (6x6)
GPIO: 22
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPP80N06S4L07AKSA1 IPP80N06S4L07AKSA1 Infineon Technologies Infineon-IPP_B_I80N06S4L_07-DS-v01_00-en%5B1%5D.pdf?fileId=db3a304320d39d590121aa3ae68d1c80 Description: MOSFET N-CH 60V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPP80N06S405AKSA2 IPP80N06S405AKSA2 Infineon Technologies IPx80N06S4-05_Rev1.0_2009-03-24.pdf Description: MOSFET N-CHANNEL_55/60V
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Qualification: AEC-Q101
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IPP80N06S2L06AKSA1 IPP80N06S2L06AKSA1 Infineon Technologies IPB%2CIPP80N06S2L-06.pdf Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 69A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 180µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Qualification: AEC-Q101
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IPP80N06S207AKSA1 IPP80N06S207AKSA1 Infineon Technologies Infineon-IPP_B_I80N06S2_07-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426db703ad9&fileId=db3a304412b407950112b43339a25ab4&ack=t Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Qualification: AEC-Q101
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IPP80N06S4L05AKSA1 IPP80N06S4L05AKSA1 Infineon Technologies Infineon-I80N06S4L_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038e65fed0d07 Description: MOSFET N-CH 60V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 80A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Qualification: AEC-Q101
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IPP80N06S4L07AKSA2 IPP80N06S4L07AKSA2 Infineon Technologies Infineon-IPP_B_I80N06S4L_07-DS-v01_00-en%5B1%5D.pdf?fileId=db3a304320d39d590121aa3ae68d1c80 Description: MOSFET N-CH 60V 80A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V
Qualification: AEC-Q101
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IPP80N06S2L11AKSA2 IPP80N06S2L11AKSA2 Infineon Technologies IPx80N06S2L-11.pdf Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 40A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2V @ 93µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V
Qualification: AEC-Q101
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IPP80N06S2L06AKSA2 IPP80N06S2L06AKSA2 Infineon Technologies IPx80N06S2L-06.pdf Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 69A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 180µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Qualification: AEC-Q101
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IPP80N06S2L05AKSA1 IPP80N06S2L05AKSA1 Infineon Technologies INFNS09525-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Qualification: AEC-Q101
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IPP80N06S2L09AKSA2 IPP80N06S2L09AKSA2 Infineon Technologies IPx80N06S2L-09.pdf Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 52A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 2V @ 125µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V
Qualification: AEC-Q101
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IPP80N04S2L03AKSA1 IPP80N04S2L03AKSA1 Infineon Technologies IPB%2CIPP80N04S2L-03.pdf Description: MOSFET N-CH 40V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 213 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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SPP80N06S08AKSA1 SPP80N06S08AKSA1 Infineon Technologies SP%28B%2CI%2CP%2980N06S-08.pdf Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPP80N08S406AKSA1 IPP80N08S406AKSA1 Infineon Technologies IPx80N08S4-06.pdf Description: MOSFET N-CH 80V 80A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
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IPP80N06S2LH5AKSA2 IPP80N06S2LH5AKSA2 Infineon Technologies IPB%2CIPP80N06S2L-H5.pdf Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPP80N06S2H5AKSA2 IPP80N06S2H5AKSA2 Infineon Technologies IPx80N06S2-H5.pdf Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPP80N06S207AKSA4 IPP80N06S207AKSA4 Infineon Technologies Infineon-IPP_B_I80N06S2_07-DS-v01_00-en.pdf?fileId=db3a304412b407950112b43339a25ab4&ack=t Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPP80N04S303AKSA1 IPP80N04S303AKSA1 Infineon Technologies IPx80N04S3-03.pdf Description: MOSFET N-CH 40V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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EVAL2ED1324S12PM1TOBO1 Infineon Technologies Infineon-UG-2022-11_EVAL-2ED1324S12PM1-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d018954b539e32dd6 Description: EVAL KIT FOR 2ED1324S12P
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 2ED1324S12P
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Embedded: No
Contents: Board(s)
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IHW40N60RFFKSA1 IHW40N60RFFKSA1 Infineon Technologies IHW40N60RF_ver2_3G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043271faefd01272867e39e4d58 Description: IGBT TRENCH 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/175ns
Switching Energy: 560µJ (off)
Test Condition: 400V, 40A, 5.6Ohm, 15V
Gate Charge: 220 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 305 W
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IHW40N60RFKSA1 IHW40N60RFKSA1 Infineon Technologies IHW40N60R_2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304316f66ee80117545f8f30066f Description: IGBT TRENCH 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/193ns
Switching Energy: 750µJ (off)
Test Condition: 400V, 40A, 5.6Ohm, 15V
Gate Charge: 223 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 305 W
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SKA06N60XKSA1 SKA06N60XKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT 600V 9A TO220-3-31
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 6A
Supplier Device Package: PG-TO220-3-31
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/220ns
Switching Energy: 215µJ
Test Condition: 400V, 6A, 50Ohm, 15V
Gate Charge: 32 nC
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 32 W
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BSM10GD120DN2E3224BOSA1 Infineon Technologies Description: IGBT MODULE 1200V 15A 80W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 80 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 530 pF @ 25 V
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BSM200GB170DLCE3256HDLA1 Infineon Technologies BSM150GB170DLC.pdf Description: IGBT MODULE 1700V 400A 1660W
Packaging: Bulk
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SGP10N60AXKSA1 SGP10N60AXKSA1 Infineon Technologies SGx10N60A.pdf Description: IGBT NPT 600V 20A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 28ns/178ns
Switching Energy: 320µJ
Test Condition: 400V, 10A, 25Ohm, 15V
Gate Charge: 52 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 92 W
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IPD35N10S3L26ATMA2 IPD35N10S3L26ATMA2 Infineon Technologies Infineon-IPD35N10S3L-26-DataSheet-v01_02-EN.pdf?fileId=db3a30431a5c32f2011a9085629c594b Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101
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2500+1.04 EUR
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IPB35N10S3L26ATMA2 IPB35N10S3L26ATMA2 Infineon Technologies Infineon-IPB35N10S3L-26-DataSheet-v01_02-EN.pdf?fileId=db3a304330046413013008a994583e77 Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 26.3mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FM25VN10-GTR FM25VN10-GTR Infineon Technologies Infineon-FM25V10_1-Mbit_(128_K_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe03d63127&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 1MBIT SPI 40MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FM25VN10-GTR FM25VN10-GTR Infineon Technologies Infineon-FM25V10_1-Mbit_(128_K_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe03d63127&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 1MBIT SPI 40MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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50+19.26 EUR
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FZ1200R33KF2CNOSA1 FZ1200R33KF2CNOSA1 Infineon Technologies Infineon-FZ1200R33KF2C-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b431408553eb Description: IGBT MODULE 3300V 2000A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 1200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 2000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 14500 W
Current - Collector Cutoff (Max): 12 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
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1+3713.02 EUR
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CYW20829B0LKMLXQLA1 CYW20829B0LKMLXQLA1 Infineon Technologies Infineon-CYW20829_Bluetooth_R_LE_MCU-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c8d1b852e018d209c4ffb016a Description: BLUE TOOTH LOW ENERGY
Packaging: Tray
auf Bestellung 191 Stücke:
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2+12.23 EUR
10+9.45 EUR
25+8.6 EUR
80+7.71 EUR
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IKZA100N65EH7XKSA1 IKZA100N65EH7XKSA1 Infineon Technologies Infineon-IKZA100N65EH7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8900bb570189250828d8204d Description: IGBT TRENCH FS 650V 140A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 100A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/240ns
Switching Energy: 1.24mJ (on), 1.22mJ (off)
Test Condition: 400V, 100A, 10Ohm, 15V
Gate Charge: 207 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 429 W
auf Bestellung 204 Stücke:
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2+15.08 EUR
30+9.01 EUR
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PXE1610CDNG023XTMA1 Infineon-Multiphase_digital_controllers_PXE1_PXM1-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01736b7cd95b3c4a
PXE1610CDNG023XTMA1
Hersteller: Infineon Technologies
Description: PXE1610CDN - DIGITAL DUAL OUTPUT
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: Programmable
Mounting Type: Surface Mount
Number of Outputs: 6
Voltage - Input: 3V ~ 3.6V
Operating Temperature: -5°C ~ 85°C (TA)
Applications: Controller, Intel VR12.5
Supplier Device Package: 48-VQFN (6x6)
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87+5.49 EUR
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BTG7016A1EPWXUMA1 Infineon-BTG7016A-1EPW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8caa022e018cee0efad71e67
BTG7016A1EPWXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 14TSSOP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 18mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 6.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTG7016A1EPWXUMA1 Infineon-BTG7016A-1EPW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8caa022e018cee0efad71e67
BTG7016A1EPWXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 14TSSOP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 18mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 6.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2915 Stücke:
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Anzahl Preis
7+2.89 EUR
10+2.13 EUR
25+1.94 EUR
100+1.73 EUR
250+1.63 EUR
500+1.57 EUR
1000+1.52 EUR
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FS100R12W2T7BOMA1 Infineon-FS100R12W2T7-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f18ea895736e
FS100R12W2T7BOMA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 9 µA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
auf Bestellung 471 Stücke:
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5+97.52 EUR
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FP15R12W1T7PB11BPSA1 Infineon-FP15R12W1T7P_B11-DataSheet-v00_10-EN.pdf?fileId=5546d46273a5366f01742686806765b2
FP15R12W1T7PB11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 µA
Input Capacitance (Cies) @ Vce: 2.82 nF @ 25 V
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FS25R12W1T7B11BOMA1 Infineon-FS25R12W1T7_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f186359472e9
FS25R12W1T7B11BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
auf Bestellung 553 Stücke:
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14+35.14 EUR
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BCW60FFE6327HTSA1 BCW60%2C%20BCX70%20Rev2007.pdf
BCW60FFE6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 32V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
auf Bestellung 267000 Stücke:
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5852+0.084 EUR
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IDWD40E120D7XKSA1 IDWD40E120D7_Rev1.00_12-15-23.pdf
IDWD40E120D7XKSA1
Hersteller: Infineon Technologies
Description: DIODE STD 1200V 67A PGTO24722
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 155 ns
Technology: Standard
Current - Average Rectified (Io): 67A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 40 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
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3+5.98 EUR
30+3.75 EUR
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TLE5046ICPWM2ER100HALA1 tle5046icpwm2er100hala1
Hersteller: Infineon Technologies
Description: TLE504HiEGWheSpeSenswidirectidet
Packaging: Bulk
auf Bestellung 58000 Stücke:
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190+2.44 EUR
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TLE50452IC50XTMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE50452IC100XTMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR2135JTRPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2135JTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
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IR2135JTRPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2135JTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Cut Tape (CT)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
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2+12.99 EUR
10+10.07 EUR
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IR2136PBF IRSDS12169-1.pdf?t.download=true&u=5oefqw
IR2136PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28DIP
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-PDIP
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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Anzahl Preis
94+4.95 EUR
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IR21368STRPBF IRSDS12169-1.pdf?t.download=true&u=5oefqw
IR21368STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
auf Bestellung 17961 Stücke:
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Anzahl Preis
77+6.1 EUR
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IR2131SPBF description ir2131.pdf?fileId=5546d462533600a4015355c882d7169d
IR2131SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 6183 Stücke:
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Anzahl Preis
57+8.17 EUR
Mindestbestellmenge: 57
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SP370251160XTMA1 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: SENSOR TIRE PRESSURE DIGITAL
Packaging: Tape & Reel (TR)
Output Type: Digital
Operating Temperature: -40°C ~ 125°C
Sensor Type: Tire Pressure Monitoring (TPMS)
Produkt ist nicht verfügbar
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BSP149L6906HTSA1 Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c
BSP149L6906HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 400µA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 122202 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
341+1.36 EUR
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BCX6810H6327XTSA1 bcx68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ef403903e7
BCX6810H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 20V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BCX6810H6327XTSA1 bcx68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ef403903e7
BCX6810H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 20V 1A PG-SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Qualification: AEC-Q101
auf Bestellung 46000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1731+0.29 EUR
Mindestbestellmenge: 1731
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BCX6825H6327XTSA1 bcx68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ef403903e7
BCX6825H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 20V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FF1200R17IP5PBPSA1 Infineon-FF1200R17IP5P-DataSheet-v03_00-EN.pdf?fileId=5546d4627448fb2b017457d84aae414b
FF1200R17IP5PBPSA1
Hersteller: Infineon Technologies
Description: IGBT
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 mA
Input Capacitance (Cies) @ Vce: 68 nF @ 25 V
auf Bestellung 570 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+953.36 EUR
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DF200R12KE3HOSA1 Infineon-DF200R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b431ab75550c
DF200R12KE3HOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 1040W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1040 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
auf Bestellung 208 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+151.24 EUR
Mindestbestellmenge: 4
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FP100R12W3T7B11BPSA1 Infineon-FP100R12W3T7_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b18b14a703900
FP100R12W3T7B11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY3B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
auf Bestellung 277 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+167.82 EUR
Mindestbestellmenge: 3
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FF300R12KT3HOSA1 Infineon-FF300R12KT3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b4345e3e6019
FF300R12KT3HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 480A 1450W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
auf Bestellung 207 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+196.64 EUR
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FP100R12KT4B11BOSA1 Infineon-FP100R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a3043156fd57301161a6b3faf1e18
FP100R12KT4B11BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 100A 515W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
auf Bestellung 47 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+187.21 EUR
Mindestbestellmenge: 3
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BGSF18DM20E6327XUMA1 fundamentals-of-power-semiconductors
BGSF18DM20E6327XUMA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP8T
Packaging: Bulk
Circuit: SP8T
RF Type: Cellular, 3G, GSM
auf Bestellung 8287 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
289+1.57 EUR
Mindestbestellmenge: 289
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FF1800XTR17T2P5BPSA1 Infineon-FF1800XTR17T2P5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c4ca458f81d4c
FF1800XTR17T2P5BPSA1
Hersteller: Infineon Technologies
Description: XHP LV
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1800000 W
Current - Collector Cutoff (Max): 10 mA
Input Capacitance (Cies) @ Vce: 84000 pF @ 25 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1712.37 EUR
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CYW20738A2KML3G BCM20738_RevC_Oct18%2C2016.pdf
CYW20738A2KML3G
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Tray
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -93dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.2V
Power - Output: 4dBm
Protocol: Bluetooth v4.0
Current - Receiving: 26.8mA
Data Rate (Max): 1Mbps
Current - Transmitting: 26.9mA
Supplier Device Package: 40-QFN (6x6)
GPIO: 22
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPP80N06S4L07AKSA1 Infineon-IPP_B_I80N06S4L_07-DS-v01_00-en%5B1%5D.pdf?fileId=db3a304320d39d590121aa3ae68d1c80
IPP80N06S4L07AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3692 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
770+0.63 EUR
Mindestbestellmenge: 770
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IPP80N06S405AKSA2 IPx80N06S4-05_Rev1.0_2009-03-24.pdf
IPP80N06S405AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL_55/60V
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 18500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
473+1.04 EUR
Mindestbestellmenge: 473
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IPP80N06S2L06AKSA1 IPB%2CIPP80N06S2L-06.pdf
IPP80N06S2L06AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 69A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 180µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 19000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
392+1.25 EUR
Mindestbestellmenge: 392
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IPP80N06S207AKSA1 Infineon-IPP_B_I80N06S2_07-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426db703ad9&fileId=db3a304412b407950112b43339a25ab4&ack=t
IPP80N06S207AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 9500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
392+1.25 EUR
Mindestbestellmenge: 392
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IPP80N06S4L05AKSA1 Infineon-I80N06S4L_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038e65fed0d07
IPP80N06S4L05AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 80A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 11500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
371+1.31 EUR
Mindestbestellmenge: 371
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IPP80N06S4L07AKSA2 Infineon-IPP_B_I80N06S4L_07-DS-v01_00-en%5B1%5D.pdf?fileId=db3a304320d39d590121aa3ae68d1c80
IPP80N06S4L07AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 19000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
361+1.35 EUR
Mindestbestellmenge: 361
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IPP80N06S2L11AKSA2 IPx80N06S2L-11.pdf
IPP80N06S2L11AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 40A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2V @ 93µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 21652 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
321+1.53 EUR
Mindestbestellmenge: 321
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IPP80N06S2L06AKSA2 IPx80N06S2L-06.pdf
IPP80N06S2L06AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 69A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 180µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 18500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
315+1.54 EUR
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IPP80N06S2L05AKSA1 INFNS09525-1.pdf?t.download=true&u=5oefqw
IPP80N06S2L05AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 25938 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
286+1.7 EUR
Mindestbestellmenge: 286
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IPP80N06S2L09AKSA2 IPx80N06S2L-09.pdf
IPP80N06S2L09AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 52A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 2V @ 125µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
275+1.77 EUR
Mindestbestellmenge: 275
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IPP80N04S2L03AKSA1 IPB%2CIPP80N04S2L-03.pdf
IPP80N04S2L03AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 213 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12579 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
254+1.93 EUR
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SPP80N06S08AKSA1 SP%28B%2CI%2CP%2980N06S-08.pdf
SPP80N06S08AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
224+2.18 EUR
Mindestbestellmenge: 224
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IPP80N08S406AKSA1 IPx80N08S4-06.pdf
IPP80N08S406AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 80A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 74306 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
195+2.38 EUR
Mindestbestellmenge: 195
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IPP80N06S2LH5AKSA2 IPB%2CIPP80N06S2L-H5.pdf
IPP80N06S2LH5AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 37835 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
177+2.76 EUR
Mindestbestellmenge: 177
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IPP80N06S2H5AKSA2 IPx80N06S2-H5.pdf
IPP80N06S2H5AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
176+2.78 EUR
Mindestbestellmenge: 176
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IPP80N06S207AKSA4 Infineon-IPP_B_I80N06S2_07-DS-v01_00-en.pdf?fileId=db3a304412b407950112b43339a25ab4&ack=t
IPP80N06S207AKSA4
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 37026 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
173+2.82 EUR
Mindestbestellmenge: 173
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IPP80N04S303AKSA1 IPx80N04S3-03.pdf
IPP80N04S303AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 345 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
345+1.53 EUR
Mindestbestellmenge: 345
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EVAL2ED1324S12PM1TOBO1 Infineon-UG-2022-11_EVAL-2ED1324S12PM1-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d018954b539e32dd6
Hersteller: Infineon Technologies
Description: EVAL KIT FOR 2ED1324S12P
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 2ED1324S12P
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Embedded: No
Contents: Board(s)
auf Bestellung 5 Stücke:
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Anzahl Preis
1+1282.18 EUR
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IHW40N60RFFKSA1 IHW40N60RF_ver2_3G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043271faefd01272867e39e4d58
IHW40N60RFFKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/175ns
Switching Energy: 560µJ (off)
Test Condition: 400V, 40A, 5.6Ohm, 15V
Gate Charge: 220 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 305 W
auf Bestellung 397 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
130+3.57 EUR
Mindestbestellmenge: 130
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IHW40N60RFKSA1 IHW40N60R_2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304316f66ee80117545f8f30066f
IHW40N60RFKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/193ns
Switching Energy: 750µJ (off)
Test Condition: 400V, 40A, 5.6Ohm, 15V
Gate Charge: 223 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 305 W
auf Bestellung 544 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
128+3.65 EUR
Mindestbestellmenge: 128
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SKA06N60XKSA1 fundamentals-of-power-semiconductors
SKA06N60XKSA1
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 9A TO220-3-31
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 6A
Supplier Device Package: PG-TO220-3-31
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/220ns
Switching Energy: 215µJ
Test Condition: 400V, 6A, 50Ohm, 15V
Gate Charge: 32 nC
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 32 W
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
426+1.08 EUR
Mindestbestellmenge: 426
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BSM10GD120DN2E3224BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 15A 80W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 80 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 530 pF @ 25 V
auf Bestellung 2256 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+87.86 EUR
Mindestbestellmenge: 6
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BSM200GB170DLCE3256HDLA1 BSM150GB170DLC.pdf
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 400A 1660W
Packaging: Bulk
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+252.38 EUR
Mindestbestellmenge: 2
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SGP10N60AXKSA1 SGx10N60A.pdf
SGP10N60AXKSA1
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 20A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 28ns/178ns
Switching Energy: 320µJ
Test Condition: 400V, 10A, 25Ohm, 15V
Gate Charge: 52 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 92 W
auf Bestellung 33219 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
228+2.03 EUR
Mindestbestellmenge: 228
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IPD35N10S3L26ATMA2 Infineon-IPD35N10S3L-26-DataSheet-v01_02-EN.pdf?fileId=db3a30431a5c32f2011a9085629c594b
IPD35N10S3L26ATMA2
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.04 EUR
Mindestbestellmenge: 2500
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IPB35N10S3L26ATMA2 Infineon-IPB35N10S3L-26-DataSheet-v01_02-EN.pdf?fileId=db3a304330046413013008a994583e77
IPB35N10S3L26ATMA2
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 26.3mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FM25VN10-GTR Infineon-FM25V10_1-Mbit_(128_K_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe03d63127&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM25VN10-GTR
Hersteller: Infineon Technologies
Description: IC FRAM 1MBIT SPI 40MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FM25VN10-GTR Infineon-FM25V10_1-Mbit_(128_K_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe03d63127&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM25VN10-GTR
Hersteller: Infineon Technologies
Description: IC FRAM 1MBIT SPI 40MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 2364 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.96 EUR
10+20.38 EUR
25+19.74 EUR
50+19.26 EUR
100+18.79 EUR
250+18.51 EUR
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FZ1200R33KF2CNOSA1 Infineon-FZ1200R33KF2C-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b431408553eb
FZ1200R33KF2CNOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 3300V 2000A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 1200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 2000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 14500 W
Current - Collector Cutoff (Max): 12 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3713.02 EUR
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CYW20829B0LKMLXQLA1 Infineon-CYW20829_Bluetooth_R_LE_MCU-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c8d1b852e018d209c4ffb016a
CYW20829B0LKMLXQLA1
Hersteller: Infineon Technologies
Description: BLUE TOOTH LOW ENERGY
Packaging: Tray
auf Bestellung 191 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.23 EUR
10+9.45 EUR
25+8.6 EUR
80+7.71 EUR
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IKZA100N65EH7XKSA1 Infineon-IKZA100N65EH7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8900bb570189250828d8204d
IKZA100N65EH7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 140A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 100A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/240ns
Switching Energy: 1.24mJ (on), 1.22mJ (off)
Test Condition: 400V, 100A, 10Ohm, 15V
Gate Charge: 207 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 429 W
auf Bestellung 204 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.08 EUR
30+9.01 EUR
120+8.98 EUR
Mindestbestellmenge: 2
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