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FM25VN10-GTR FM25VN10-GTR Infineon Technologies Infineon-FM25V10_1-Mbit_(128_K_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe03d63127&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 1MBIT SPI 40MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FM25VN10-GTR FM25VN10-GTR Infineon Technologies Infineon-FM25V10_1-Mbit_(128_K_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe03d63127&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 1MBIT SPI 40MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 2364 Stücke:
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1+22.05 EUR
10+20.46 EUR
25+19.82 EUR
50+19.34 EUR
100+18.86 EUR
250+18.58 EUR
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FZ1200R33KF2CNOSA1 FZ1200R33KF2CNOSA1 Infineon Technologies Infineon-FZ1200R33KF2C-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b431408553eb Description: IGBT MODULE 3300V 2000A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 1200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 2000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 14500 W
Current - Collector Cutoff (Max): 12 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
auf Bestellung 90 Stücke:
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1+3727.42 EUR
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CYW20829B0LKMLXQLA1 CYW20829B0LKMLXQLA1 Infineon Technologies Infineon-CYW20829_Bluetooth_R_LE_MCU-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c8d1b852e018d209c4ffb016a Description: BLUE TOOTH LOW ENERGY
Packaging: Tray
auf Bestellung 191 Stücke:
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2+12.23 EUR
10+9.45 EUR
25+8.60 EUR
80+7.71 EUR
Mindestbestellmenge: 2
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IKZA100N65EH7XKSA1 IKZA100N65EH7XKSA1 Infineon Technologies Infineon-IKZA100N65EH7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8900bb570189250828d8204d Description: IGBT TRENCH FS 650V 140A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 100A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/240ns
Switching Energy: 1.24mJ (on), 1.22mJ (off)
Test Condition: 400V, 100A, 10Ohm, 15V
Gate Charge: 207 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 429 W
auf Bestellung 204 Stücke:
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2+15.08 EUR
30+9.01 EUR
120+8.98 EUR
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FP10R06W1E3BOMA1 FP10R06W1E3BOMA1 Infineon Technologies Infineon-FP10R06W1E3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b43312285a63 Description: IGBT MODULE 600V 16A 68W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 68 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 550 pF @ 25 V
auf Bestellung 38 Stücke:
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11+46.76 EUR
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FP10R06W1E3BOMA1 FP10R06W1E3BOMA1 Infineon Technologies Infineon-FP10R06W1E3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b43312285a63 Description: IGBT MODULE 600V 16A 68W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 68 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 550 pF @ 25 V
auf Bestellung 3 Stücke:
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1+58.50 EUR
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DD200S33K2CC1NOSA1 DD200S33K2CC1NOSA1 Infineon Technologies DD200S33K2C_v2.3_4-13-15.pdf Description: DIODE MOD GP 3300V 200A AIHV73-3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: A-IHV73-3
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 200 A
auf Bestellung 50 Stücke:
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DD1200S45KL3B5NOSA1 DD1200S45KL3B5NOSA1 Infineon Technologies Infineon-DD1200S45KL3_B5-DS-v03_00-EN.pdf?fileId=5546d46145f1f3a40146376cfa687d3e Description: DIODE MODULE GP 4500V AIHV130-4
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: A-IHV130-4
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 1200 A
auf Bestellung 2 Stücke:
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BCR169E6327HTSA1 BCR169E6327HTSA1 Infineon Technologies bcr169series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440313bb302d1 Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
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BCR166E6433HTMA1 BCR166E6433HTMA1 Infineon Technologies bcr166series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a3730114402db36002d0 Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 160 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 50000 Stücke:
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7991+0.06 EUR
Mindestbestellmenge: 7991
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BCR166WH6327XTSA1 BCR166WH6327XTSA1 Infineon Technologies bcr166series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a3730114402db36002d0 Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 160 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 109500 Stücke:
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5392+0.09 EUR
Mindestbestellmenge: 5392
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CY7C1525KV18-250BZXIT CY7C1525KV18-250BZXIT Infineon Technologies CY7C1510%2C2%2C4%2C25KV18.pdf Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tape & Reel (TR)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 8M x 9
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C6248BZI-S2D44T CY8C6248BZI-S2D44T Infineon Technologies Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR ; D/A 2x7/8b Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
Produkt ist nicht verfügbar
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CY8C624ABZI-S2D44T CY8C624ABZI-S2D44T Infineon Technologies Infineon-PSOC_6_MCU_CY8C62X8_CY8C62XA-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7d03a70b1 Description: IC MCU 32BIT 2MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x12b SAR, 10b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, I2S, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYPD6125-40LQXI Infineon Technologies Description: IC MCU 32BIT 32KB FLASH 40QFN
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BTG70013A1ESWXUMA1 BTG70013A1ESWXUMA1 Infineon Technologies Infineon-BTG70013A-1ESW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8caa022e018cf222d43f3b97 Description: IC PWR SWITCH N-CHAN 1:1 24TSSOP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.5mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 26.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTG70013A1ESWXUMA1 BTG70013A1ESWXUMA1 Infineon Technologies Infineon-BTG70013A-1ESW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8caa022e018cf222d43f3b97 Description: IC PWR SWITCH N-CHAN 1:1 24TSSOP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.5mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 26.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2885 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.76 EUR
10+5.90 EUR
25+5.43 EUR
100+4.92 EUR
250+4.68 EUR
500+4.53 EUR
1000+4.41 EUR
Mindestbestellmenge: 3
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CY9BF404RAMPMC-G-UNE2 CY9BF404RAMPMC-G-UNE2 Infineon Technologies CY9B400A.PDF Description: IC MCU 32BIT 256KB 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 100
auf Bestellung 840 Stücke:
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2+11.35 EUR
10+8.74 EUR
25+8.08 EUR
84+7.44 EUR
252+7.02 EUR
504+6.81 EUR
Mindestbestellmenge: 2
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S25HS512TFANHI010 S25HS512TFANHI010 Infineon Technologies Description: IC FLASH 512MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 2545 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.86 EUR
10+15.61 EUR
25+15.26 EUR
40+15.18 EUR
80+13.36 EUR
338+12.70 EUR
676+12.57 EUR
1014+12.15 EUR
Mindestbestellmenge: 2
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TLE7189FXUMA2 TLE7189FXUMA2 Infineon Technologies Infineon-TLE7189F-DS-v02_02-EN.pdf?fileId=db3a304318f3fe290118f4afdd4f000d Description: IC MOTOR DRIVER 5.5V-28V 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 28V
Technology: Power MOSFET
Supplier Device Package: PG-VQFN-48-72
Motor Type - AC, DC: Brushless DC (BLDC), Brushed DC
Grade: Automotive
Produkt ist nicht verfügbar
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S26HL01GTFPBHI030 S26HL01GTFPBHI030 Infineon Technologies Description: IC FLASH 1GBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
auf Bestellung 1300 Stücke:
Lieferzeit 10-14 Tag (e)
1+32.45 EUR
10+30.22 EUR
25+29.89 EUR
40+29.15 EUR
80+25.59 EUR
260+24.73 EUR
520+24.06 EUR
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S26KS128SDPBHV020 S26KS128SDPBHV020 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 128MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
auf Bestellung 273 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.35 EUR
10+11.97 EUR
25+11.13 EUR
100+10.20 EUR
Mindestbestellmenge: 2
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S26KS128SDPBHB020 S26KS128SDPBHB020 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Description: IC FLASH 128MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 333 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.63 EUR
10+12.20 EUR
25+11.35 EUR
100+10.40 EUR
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S71KL512SC0BHV000 S71KL512SC0BHV000 Infineon Technologies Infineon-512_MBIT_HYPERFLASH_+_64_MBIT_HYPERRAM_3V_MCP-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee30f916a0a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH RAM 512MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH, DRAM
Clock Frequency: 100 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
DigiKey Programmable: Not Verified
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TLV49642MXTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MAG SWITCH IC HALL EFF SOT23-3
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
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FF300R07ME4BOSA1 FF300R07ME4BOSA1 Infineon Technologies Infineon-FF300R07ME4-DataSheet-v03_00-EN.pdf?fileId=5546d4626e651a41016e7e1956c9107b Description: GBT MODULE 650V 300A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
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FF450R07ME4BOSA1 FF450R07ME4BOSA1 Infineon Technologies Infineon-FF450R07ME4-DataSheet-v03_00-EN.pdf?fileId=5546d4626e651a41016e7e227bfd1087 Description: GBT MODULE 650V 450A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 27.5 nF @ 25 V
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FD400R07PE4RB6BOSA1 Infineon Technologies Infineon-FD400R07PE4R_B6-DS-v03_00-en_de.pdf?fileId=db3a30433a047ba0013a6e432c415fb4 Description: IGBT MOD 650V 460A 1150W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 460 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1150 W
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
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FP100R07N3E4BOSA1 FP100R07N3E4BOSA1 Infineon Technologies Infineon-FP100R07N3E4-DS-v02_01-en_de.pdf?fileId=db3a3043324cae8c013262bbe5453970 Description: IGBT MOD 650V 100A 335W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
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CY7C1327G-133AXIT CY7C1327G-133AXIT Infineon Technologies Infineon-CY7C1327G_4-Mbit_(256_K_18)_Pipelined_Sync_SRAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec41d4b3988 Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 4 ns
Memory Organization: 256K x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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D255N04BXPSA1 D255N04BXPSA1 Infineon Technologies D255N.pdf Description: DIODE GEN PURP 400V 255A
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 255A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 20 mA @ 400 V
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BC848BWH6327XTSA1 BC848BWH6327XTSA1 Infineon Technologies bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Description: TRANS NPN 30V 0.1A PG-SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
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BC848BE6327HTSA1 BC848BE6327HTSA1 Infineon Technologies bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Description: TRANS NPN 30V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
auf Bestellung 668279 Stücke:
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BC848BE6433HTMA1 BC848BE6433HTMA1 Infineon Technologies bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Description: TRANS NPN 30V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
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IRL3103STRLPBF IRL3103STRLPBF Infineon Technologies irl3103spbf.pdf?fileId=5546d462533600a40153565bb8702516 Description: MOSFET N-CH 30V 64A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
auf Bestellung 159064 Stücke:
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CY7C1350G-133AXC CY7C1350G-133AXC Infineon Technologies Infineon-CY7C1350G_4-Mbit_(128_K_36)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec1032c35ab Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 4 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
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50+10.19 EUR
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CY8C4014SXI-421 CY8C4014SXI-421 Infineon Technologies Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 16KB FLASH 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 16-SOIC
Number of I/O: 13
DigiKey Programmable: Not Verified
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5+3.78 EUR
10+2.80 EUR
25+2.56 EUR
100+2.29 EUR
250+2.16 EUR
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DD1000S33HE3BPSA1 DD1000S33HE3BPSA1 Infineon Technologies Infineon-DD1000S33HE3-DS-v03_02-EN.pdf?fileId=db3a30431ce5fb52011d7605752a7279 Description: DIODE MODULE GP 3300V AGIHVB1303
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: AG-IHVB130-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 1000 A
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CYAT817L-128AA72 Infineon Technologies Infineon-CYAT817L-100AA72-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edadb500bad Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: PWM
Supplier Device Package: PG-TQFP-128-800
Grade: Automotive
Number of I/O: 29
Qualification: AEC-Q100
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CYAT817LS-128AA72 Infineon Technologies Infineon-CYAT817L-100AA72-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edadb500bad Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: PWM
Supplier Device Package: PG-TQFP-128-800
Grade: Automotive
Number of I/O: 29
Qualification: AEC-Q100
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CYAT817L-128AS72 Infineon Technologies Infineon-CYAT817L-100AA72-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edadb500bad Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: PWM
Supplier Device Package: PG-TQFP-128-800
Grade: Automotive
Number of I/O: 29
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CYAT817LS-128AS72 Infineon Technologies Infineon-CYAT817L-100AA72-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edadb500bad Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: PWM
Supplier Device Package: PG-TQFP-128-800
Grade: Automotive
Number of I/O: 29
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IPSA70R900P7SAKMA1 IPSA70R900P7SAKMA1 Infineon Technologies Infineon-IPSA70R900P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f4e4118ec13fb Description: MOSFET N-CH 700V 6A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V
Power Dissipation (Max): 30.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V
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1135+0.44 EUR
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IAUC50N08S5L096ATMA1 IAUC50N08S5L096ATMA1 Infineon Technologies Infineon-IAUC50N08S5L096-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd3f6cf0205 Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 24µA
Supplier Device Package: PG-TDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1684 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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11+1.69 EUR
100+1.13 EUR
500+0.89 EUR
1000+0.81 EUR
2000+0.79 EUR
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FP35R12W2T4B11BOMA1 FP35R12W2T4B11BOMA1 Infineon Technologies Infineon-FP35R12W2T4_B11-DS-v02_00-en_de.pdf?fileId=db3a30431add1d95011aed3bcbcc0279 Description: IGBT MOD 1200V 54A 215W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 215 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
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FP50R12KT4GB15BOSA1 FP50R12KT4GB15BOSA1 Infineon Technologies FP50R12KT4G_B15.pdf Description: IGBT MOD 1200V 50A 280W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
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SAK-TC1766-192F80HL BB SAK-TC1766-192F80HL BB Infineon Technologies fundamentals-of-power-semiconductors Description: IC MCU 32BIT FLASH LQFP-176
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.5M x 8
Supplier Device Package: PG-LQFP-176-2
Number of I/O: 81
DigiKey Programmable: Not Verified
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TC223S16F133FACLXUMA1 TC223S16F133FACLXUMA1 Infineon Technologies Power_Sensing_Selection_Guide_2021.pdf Description: IC MCU 32BIT 1MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-100-23
Number of I/O: 78
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC233LP32F200FACLXUMA1 TC233LP32F200FACLXUMA1 Infineon Technologies Infineon-TC23xAC_DS-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b401695316f3d103ee Description: IC MCU 32BIT 2MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-100-23
Number of I/O: 78
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRFR8405 AUIRFR8405 Infineon Technologies auirfr8405.pdf?fileId=5546d462533600a4015355b6216514a5 Description: MOSFET N-CH 40V 100A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.98mOhm @ 90A, 10V
Power Dissipation (Max): 163W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5171 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2583 Stücke:
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211+2.20 EUR
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AUIRFR8405 AUIRFR8405 Infineon Technologies auirfr8405.pdf?fileId=5546d462533600a4015355b6216514a5 Description: MOSFET N-CH 40V 100A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.98mOhm @ 90A, 10V
Power Dissipation (Max): 163W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5171 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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AUIRFS8403TRL AUIRFS8403TRL Infineon Technologies auirfs8403.pdf?fileId=5546d462533600a4015355b6fc7a14db Description: MOSFET N-CH 40V 123A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3183 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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AUIRFS8403TRL AUIRFS8403TRL Infineon Technologies auirfs8403.pdf?fileId=5546d462533600a4015355b6fc7a14db Description: MOSFET N-CH 40V 123A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3183 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
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193+2.41 EUR
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PZTA14H6327XTSA1 PZTA14H6327XTSA1 Infineon Technologies pzta14.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e89099018b Description: TRANS NPN DARL 30V 0.3A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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KP256XTMA2 KP256XTMA2 Infineon Technologies KP256.pdf Description: IC ANLG BAROMETRIC SNSR DSOF8
Packaging: Tape & Reel (TR)
Applications: Board Mount
Produkt ist nicht verfügbar
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KP256XTMA2 KP256XTMA2 Infineon Technologies KP256.pdf Description: IC ANLG BAROMETRIC SNSR DSOF8
Packaging: Cut Tape (CT)
Applications: Board Mount
auf Bestellung 1463 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.38 EUR
5+7.52 EUR
10+7.20 EUR
25+6.82 EUR
50+6.57 EUR
100+6.33 EUR
500+5.86 EUR
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KP254XTMA2 KP254XTMA2 Infineon Technologies Infineon-KP254-DS-v01_01-EN.pdf?fileId=5546d46254e133b401557355b9a5643b Description: IC ANLG BAROMETRIC SNSR DSOF8-16
Packaging: Tape & Reel (TR)
Applications: Board Mount
Produkt ist nicht verfügbar
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KP254XTMA2 KP254XTMA2 Infineon Technologies Infineon-KP254-DS-v01_01-EN.pdf?fileId=5546d46254e133b401557355b9a5643b Description: IC ANLG BAROMETRIC SNSR DSOF8-16
Packaging: Cut Tape (CT)
Applications: Board Mount
auf Bestellung 1377 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.38 EUR
5+7.52 EUR
10+7.20 EUR
25+6.82 EUR
50+6.57 EUR
100+6.33 EUR
500+5.94 EUR
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IPI50N10S3L16AKSA1 IPI50N10S3L16AKSA1 Infineon Technologies Infineon-IPP_B_I50N10S3L_16-DS-v01_01-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9090a32c5962&ack=t Description: MOSFET N-CH 100V 50A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12775 Stücke:
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231+2.11 EUR
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FM25VN10-GTR Infineon-FM25V10_1-Mbit_(128_K_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe03d63127&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM25VN10-GTR
Hersteller: Infineon Technologies
Description: IC FRAM 1MBIT SPI 40MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FM25VN10-GTR Infineon-FM25V10_1-Mbit_(128_K_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe03d63127&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM25VN10-GTR
Hersteller: Infineon Technologies
Description: IC FRAM 1MBIT SPI 40MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 2364 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.05 EUR
10+20.46 EUR
25+19.82 EUR
50+19.34 EUR
100+18.86 EUR
250+18.58 EUR
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FZ1200R33KF2CNOSA1 Infineon-FZ1200R33KF2C-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b431408553eb
FZ1200R33KF2CNOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 3300V 2000A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 1200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 2000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 14500 W
Current - Collector Cutoff (Max): 12 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
auf Bestellung 90 Stücke:
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Anzahl Preis
1+3727.42 EUR
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CYW20829B0LKMLXQLA1 Infineon-CYW20829_Bluetooth_R_LE_MCU-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c8d1b852e018d209c4ffb016a
CYW20829B0LKMLXQLA1
Hersteller: Infineon Technologies
Description: BLUE TOOTH LOW ENERGY
Packaging: Tray
auf Bestellung 191 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.23 EUR
10+9.45 EUR
25+8.60 EUR
80+7.71 EUR
Mindestbestellmenge: 2
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IKZA100N65EH7XKSA1 Infineon-IKZA100N65EH7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8900bb570189250828d8204d
IKZA100N65EH7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 140A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 100A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/240ns
Switching Energy: 1.24mJ (on), 1.22mJ (off)
Test Condition: 400V, 100A, 10Ohm, 15V
Gate Charge: 207 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 429 W
auf Bestellung 204 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.08 EUR
30+9.01 EUR
120+8.98 EUR
Mindestbestellmenge: 2
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FP10R06W1E3BOMA1 Infineon-FP10R06W1E3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b43312285a63
FP10R06W1E3BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 600V 16A 68W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 68 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 550 pF @ 25 V
auf Bestellung 38 Stücke:
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Anzahl Preis
11+46.76 EUR
Mindestbestellmenge: 11
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FP10R06W1E3BOMA1 Infineon-FP10R06W1E3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b43312285a63
FP10R06W1E3BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 600V 16A 68W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 68 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 550 pF @ 25 V
auf Bestellung 3 Stücke:
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Anzahl Preis
1+58.50 EUR
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DD200S33K2CC1NOSA1 DD200S33K2C_v2.3_4-13-15.pdf
DD200S33K2CC1NOSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 3300V 200A AIHV73-3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: A-IHV73-3
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 200 A
auf Bestellung 50 Stücke:
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Anzahl Preis
1+2208.31 EUR
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DD1200S45KL3B5NOSA1 Infineon-DD1200S45KL3_B5-DS-v03_00-EN.pdf?fileId=5546d46145f1f3a40146376cfa687d3e
DD1200S45KL3B5NOSA1
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 4500V AIHV130-4
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: A-IHV130-4
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 1200 A
auf Bestellung 2 Stücke:
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Anzahl Preis
1+2611.12 EUR
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BCR169E6327HTSA1 bcr169series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440313bb302d1
BCR169E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
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BCR166E6433HTMA1 bcr166series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a3730114402db36002d0
BCR166E6433HTMA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 160 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7991+0.06 EUR
Mindestbestellmenge: 7991
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BCR166WH6327XTSA1 bcr166series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a3730114402db36002d0
BCR166WH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 160 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 109500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5392+0.09 EUR
Mindestbestellmenge: 5392
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CY7C1525KV18-250BZXIT CY7C1510%2C2%2C4%2C25KV18.pdf
CY7C1525KV18-250BZXIT
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tape & Reel (TR)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 8M x 9
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C6248BZI-S2D44T
CY8C6248BZI-S2D44T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR ; D/A 2x7/8b Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
Produkt ist nicht verfügbar
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CY8C624ABZI-S2D44T Infineon-PSOC_6_MCU_CY8C62X8_CY8C62XA-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7d03a70b1
CY8C624ABZI-S2D44T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x12b SAR, 10b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, I2S, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYPD6125-40LQXI
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 40QFN
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BTG70013A1ESWXUMA1 Infineon-BTG70013A-1ESW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8caa022e018cf222d43f3b97
BTG70013A1ESWXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 24TSSOP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.5mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 26.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTG70013A1ESWXUMA1 Infineon-BTG70013A-1ESW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8caa022e018cf222d43f3b97
BTG70013A1ESWXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 24TSSOP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.5mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 26.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2885 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.76 EUR
10+5.90 EUR
25+5.43 EUR
100+4.92 EUR
250+4.68 EUR
500+4.53 EUR
1000+4.41 EUR
Mindestbestellmenge: 3
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CY9BF404RAMPMC-G-UNE2 CY9B400A.PDF
CY9BF404RAMPMC-G-UNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 100
auf Bestellung 840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.35 EUR
10+8.74 EUR
25+8.08 EUR
84+7.44 EUR
252+7.02 EUR
504+6.81 EUR
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S25HS512TFANHI010
S25HS512TFANHI010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 2545 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.86 EUR
10+15.61 EUR
25+15.26 EUR
40+15.18 EUR
80+13.36 EUR
338+12.70 EUR
676+12.57 EUR
1014+12.15 EUR
Mindestbestellmenge: 2
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TLE7189FXUMA2 Infineon-TLE7189F-DS-v02_02-EN.pdf?fileId=db3a304318f3fe290118f4afdd4f000d
TLE7189FXUMA2
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 5.5V-28V 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 28V
Technology: Power MOSFET
Supplier Device Package: PG-VQFN-48-72
Motor Type - AC, DC: Brushless DC (BLDC), Brushed DC
Grade: Automotive
Produkt ist nicht verfügbar
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S26HL01GTFPBHI030
S26HL01GTFPBHI030
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
auf Bestellung 1300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+32.45 EUR
10+30.22 EUR
25+29.89 EUR
40+29.15 EUR
80+25.59 EUR
260+24.73 EUR
520+24.06 EUR
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S26KS128SDPBHV020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S26KS128SDPBHV020
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
auf Bestellung 273 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.35 EUR
10+11.97 EUR
25+11.13 EUR
100+10.20 EUR
Mindestbestellmenge: 2
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S26KS128SDPBHB020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
S26KS128SDPBHB020
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 333 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.63 EUR
10+12.20 EUR
25+11.35 EUR
100+10.40 EUR
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S71KL512SC0BHV000 Infineon-512_MBIT_HYPERFLASH_+_64_MBIT_HYPERRAM_3V_MCP-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee30f916a0a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S71KL512SC0BHV000
Hersteller: Infineon Technologies
Description: IC FLASH RAM 512MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH, DRAM
Clock Frequency: 100 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLV49642MXTMA1 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: MAG SWITCH IC HALL EFF SOT23-3
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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FF300R07ME4BOSA1 Infineon-FF300R07ME4-DataSheet-v03_00-EN.pdf?fileId=5546d4626e651a41016e7e1956c9107b
FF300R07ME4BOSA1
Hersteller: Infineon Technologies
Description: GBT MODULE 650V 300A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
auf Bestellung 576 Stücke:
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Anzahl Preis
4+144.45 EUR
Mindestbestellmenge: 4
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FF450R07ME4BOSA1 Infineon-FF450R07ME4-DataSheet-v03_00-EN.pdf?fileId=5546d4626e651a41016e7e227bfd1087
FF450R07ME4BOSA1
Hersteller: Infineon Technologies
Description: GBT MODULE 650V 450A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 27.5 nF @ 25 V
auf Bestellung 220 Stücke:
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Anzahl Preis
3+168.51 EUR
Mindestbestellmenge: 3
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FD400R07PE4RB6BOSA1 Infineon-FD400R07PE4R_B6-DS-v03_00-en_de.pdf?fileId=db3a30433a047ba0013a6e432c415fb4
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 460A 1150W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 460 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1150 W
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Produkt ist nicht verfügbar
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FP100R07N3E4BOSA1 Infineon-FP100R07N3E4-DS-v02_01-en_de.pdf?fileId=db3a3043324cae8c013262bbe5453970
FP100R07N3E4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 100A 335W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
auf Bestellung 22 Stücke:
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Anzahl Preis
4+151.26 EUR
Mindestbestellmenge: 4
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CY7C1327G-133AXIT Infineon-CY7C1327G_4-Mbit_(256_K_18)_Pipelined_Sync_SRAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec41d4b3988
CY7C1327G-133AXIT
Hersteller: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 4 ns
Memory Organization: 256K x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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D255N04BXPSA1 D255N.pdf
D255N04BXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 400V 255A
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 255A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 20 mA @ 400 V
auf Bestellung 2 Stücke:
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Anzahl Preis
2+259.20 EUR
Mindestbestellmenge: 2
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BC848BWH6327XTSA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
BC848BWH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 30V 0.1A PG-SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
auf Bestellung 363000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9584+0.05 EUR
Mindestbestellmenge: 9584
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BC848BE6327HTSA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
BC848BE6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 30V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
auf Bestellung 668279 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11357+0.05 EUR
Mindestbestellmenge: 11357
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BC848BE6433HTMA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
BC848BE6433HTMA1
Hersteller: Infineon Technologies
Description: TRANS NPN 30V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11357+0.05 EUR
Mindestbestellmenge: 11357
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IRL3103STRLPBF irl3103spbf.pdf?fileId=5546d462533600a40153565bb8702516
IRL3103STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 64A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
auf Bestellung 159064 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
480+1.02 EUR
Mindestbestellmenge: 480
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CY7C1350G-133AXC Infineon-CY7C1350G_4-Mbit_(128_K_36)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec1032c35ab
CY7C1350G-133AXC
Hersteller: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 4 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
auf Bestellung 305 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+10.19 EUR
Mindestbestellmenge: 50
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CY8C4014SXI-421 Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4014SXI-421
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 16-SOIC
Number of I/O: 13
DigiKey Programmable: Not Verified
auf Bestellung 357 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.78 EUR
10+2.80 EUR
25+2.56 EUR
100+2.29 EUR
250+2.16 EUR
Mindestbestellmenge: 5
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DD1000S33HE3BPSA1 Infineon-DD1000S33HE3-DS-v03_02-EN.pdf?fileId=db3a30431ce5fb52011d7605752a7279
DD1000S33HE3BPSA1
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 3300V AGIHVB1303
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: AG-IHVB130-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 1000 A
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1707.43 EUR
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CYAT817L-128AA72 Infineon-CYAT817L-100AA72-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edadb500bad
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: PWM
Supplier Device Package: PG-TQFP-128-800
Grade: Automotive
Number of I/O: 29
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CYAT817LS-128AA72 Infineon-CYAT817L-100AA72-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edadb500bad
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: PWM
Supplier Device Package: PG-TQFP-128-800
Grade: Automotive
Number of I/O: 29
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CYAT817L-128AS72 Infineon-CYAT817L-100AA72-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edadb500bad
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: PWM
Supplier Device Package: PG-TQFP-128-800
Grade: Automotive
Number of I/O: 29
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CYAT817LS-128AS72 Infineon-CYAT817L-100AA72-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edadb500bad
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: PWM
Supplier Device Package: PG-TQFP-128-800
Grade: Automotive
Number of I/O: 29
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IPSA70R900P7SAKMA1 Infineon-IPSA70R900P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f4e4118ec13fb
IPSA70R900P7SAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 6A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V
Power Dissipation (Max): 30.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V
auf Bestellung 67500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1135+0.44 EUR
Mindestbestellmenge: 1135
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IAUC50N08S5L096ATMA1 Infineon-IAUC50N08S5L096-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd3f6cf0205
IAUC50N08S5L096ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 24µA
Supplier Device Package: PG-TDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1684 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8017 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.66 EUR
11+1.69 EUR
100+1.13 EUR
500+0.89 EUR
1000+0.81 EUR
2000+0.79 EUR
Mindestbestellmenge: 7
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FP35R12W2T4B11BOMA1 Infineon-FP35R12W2T4_B11-DS-v02_00-en_de.pdf?fileId=db3a30431add1d95011aed3bcbcc0279
FP35R12W2T4B11BOMA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 54A 215W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 215 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+84.87 EUR
Mindestbestellmenge: 6
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FP50R12KT4GB15BOSA1 FP50R12KT4G_B15.pdf
FP50R12KT4GB15BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 50A 280W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
auf Bestellung 117 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+136.53 EUR
Mindestbestellmenge: 4
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SAK-TC1766-192F80HL BB fundamentals-of-power-semiconductors
SAK-TC1766-192F80HL BB
Hersteller: Infineon Technologies
Description: IC MCU 32BIT FLASH LQFP-176
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.5M x 8
Supplier Device Package: PG-LQFP-176-2
Number of I/O: 81
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC223S16F133FACLXUMA1 Power_Sensing_Selection_Guide_2021.pdf
TC223S16F133FACLXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-100-23
Number of I/O: 78
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC233LP32F200FACLXUMA1 Infineon-TC23xAC_DS-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b401695316f3d103ee
TC233LP32F200FACLXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-100-23
Number of I/O: 78
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRFR8405 auirfr8405.pdf?fileId=5546d462533600a4015355b6216514a5
AUIRFR8405
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.98mOhm @ 90A, 10V
Power Dissipation (Max): 163W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5171 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2583 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
211+2.20 EUR
Mindestbestellmenge: 211
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AUIRFR8405 auirfr8405.pdf?fileId=5546d462533600a4015355b6216514a5
AUIRFR8405
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.98mOhm @ 90A, 10V
Power Dissipation (Max): 163W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5171 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRFS8403TRL auirfs8403.pdf?fileId=5546d462533600a4015355b6fc7a14db
AUIRFS8403TRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 123A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3183 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRFS8403TRL auirfs8403.pdf?fileId=5546d462533600a4015355b6fc7a14db
AUIRFS8403TRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 123A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3183 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
193+2.41 EUR
Mindestbestellmenge: 193
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PZTA14H6327XTSA1 pzta14.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e89099018b
PZTA14H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN DARL 30V 0.3A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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KP256XTMA2 KP256.pdf
KP256XTMA2
Hersteller: Infineon Technologies
Description: IC ANLG BAROMETRIC SNSR DSOF8
Packaging: Tape & Reel (TR)
Applications: Board Mount
Produkt ist nicht verfügbar
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KP256XTMA2 KP256.pdf
KP256XTMA2
Hersteller: Infineon Technologies
Description: IC ANLG BAROMETRIC SNSR DSOF8
Packaging: Cut Tape (CT)
Applications: Board Mount
auf Bestellung 1463 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.38 EUR
5+7.52 EUR
10+7.20 EUR
25+6.82 EUR
50+6.57 EUR
100+6.33 EUR
500+5.86 EUR
Mindestbestellmenge: 3
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KP254XTMA2 Infineon-KP254-DS-v01_01-EN.pdf?fileId=5546d46254e133b401557355b9a5643b
KP254XTMA2
Hersteller: Infineon Technologies
Description: IC ANLG BAROMETRIC SNSR DSOF8-16
Packaging: Tape & Reel (TR)
Applications: Board Mount
Produkt ist nicht verfügbar
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KP254XTMA2 Infineon-KP254-DS-v01_01-EN.pdf?fileId=5546d46254e133b401557355b9a5643b
KP254XTMA2
Hersteller: Infineon Technologies
Description: IC ANLG BAROMETRIC SNSR DSOF8-16
Packaging: Cut Tape (CT)
Applications: Board Mount
auf Bestellung 1377 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.38 EUR
5+7.52 EUR
10+7.20 EUR
25+6.82 EUR
50+6.57 EUR
100+6.33 EUR
500+5.94 EUR
Mindestbestellmenge: 3
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IPI50N10S3L16AKSA1 Infineon-IPP_B_I50N10S3L_16-DS-v01_01-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9090a32c5962&ack=t
IPI50N10S3L16AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 50A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12775 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
231+2.11 EUR
Mindestbestellmenge: 231
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