Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149885) > Seite 701 nach 2499

Wählen Sie Seite:   [  << Vorherige Seite ]  1 249 498 696 697 698 699 700 701 702 703 704 705 706 747 996 1245 1494 1743 1992 2241 2490 2499  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
FZ1200R17KF6CB2NOSA1 Infineon Technologies FZ1200R17KF6C_B2_Rev2.1_2013-11-25.pdf Description: IGBT MODULE 1700V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.2kA
NTC Thermistor: No
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 9600 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 79 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FZ1600R12KL4CNOSA1 Infineon Technologies FZ1600R12KL4C_Rev3.1_2013-10-02.pdf Description: IGBT MODULE 1200V 1600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 1.6kA
NTC Thermistor: No
Current - Collector (Ic) (Max): 2450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 10000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GATELEAD14231XPSA1 GATELEAD14231XPSA1 Infineon Technologies Description: ACCY GATE LEAD
Packaging: Tray
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+42.26 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GATELEAD14232XPSA1 GATELEAD14232XPSA1 Infineon Technologies Description: ACCY GATE LEAD
Packaging: Tray
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+42.26 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPB096N03LGATMA1 IPB096N03LGATMA1 Infineon Technologies IP%28B%2CP%29096N03L_G.pdf Description: MOSFET N-CH 30V 35A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R110CFDAAKSA1 IPP65R110CFDAAKSA1 Infineon Technologies Infineon-IPX65R110CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136ba7c820925a5 Description: MOSFET N-CH 650V 31.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO220-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA65R110CFDXKSA2 IPA65R110CFDXKSA2 Infineon Technologies DS_IPX65R110CFD_2_61.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30433004641301306abd8e2041b1 Description: MOSFET N-CH 650V 31.2A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 34.7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
auf Bestellung 513 Stücke:
Lieferzeit 10-14 Tag (e)
2+8.85 EUR
50+4.68 EUR
100+4.28 EUR
500+3.57 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
ND104N18KHPSA1 Infineon Technologies INFNS29282-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 1.8KV 104A PB20-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 104A
Supplier Device Package: BG-PB20-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1372KV33-167AXI CY7C1372KV33-167AXI Infineon Technologies Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_ Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
auf Bestellung 466 Stücke:
Lieferzeit 10-14 Tag (e)
1+41.25 EUR
10+38.15 EUR
25+36.93 EUR
72+35.53 EUR
144+34.64 EUR
288+34.44 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1350G-133AXI CY7C1350G-133AXI Infineon Technologies Infineon-CY7C1350G_4-Mbit_(128_K_36)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec1032c35ab Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 4 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
auf Bestellung 343 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.68 EUR
10+2.5 EUR
25+2.43 EUR
50+2.38 EUR
144+2.29 EUR
288+2.24 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1350G-133AXI CY7C1350G-133AXI Infineon Technologies Infineon-CY7C1350G_4-Mbit_(128_K_36)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec1032c35ab Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 4 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1356C-200AXI CY7C1356C-200AXI Infineon Technologies Infineon-CY7C1354C_CY7C1356C_9_MBIT_(256K_X_36_512K_X_18)_PIPELINED_SRAM_WITH_NOBL_ARCHITECTURE-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec11af735c5 Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.2 ns
Memory Organization: 512K x 18
DigiKey Programmable: Not Verified
auf Bestellung 144 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.26 EUR
10+15.66 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1354CV25-166AXC CY7C1354CV25-166AXC Infineon Technologies download Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
auf Bestellung 306 Stücke:
Lieferzeit 10-14 Tag (e)
26+19.54 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1371KV33-133AXC CY7C1371KV33-133AXC Infineon Technologies Infineon-CY7C1371KV33_CY7C1371KVE33_CY7C1373KV33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed99c465b40&utm_source=cypress&utm_medium=refe Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 144 Stücke:
Lieferzeit 10-14 Tag (e)
1+40.53 EUR
10+37.49 EUR
25+36.29 EUR
72+35.92 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1351G-100AXC CY7C1351G-100AXC Infineon Technologies Infineon-CY7C1351G_4-Mbit_(128_K_36)_Flow-through_SRAM_with_NoBL_Architecture-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0f16b359c Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62147EV30LL-45B2XI CY62147EV30LL-45B2XI Infineon Technologies CY62147EV30_MoBL_RevT_6-26-20.pdf Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 1619 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.74 EUR
10+6.27 EUR
25+6.08 EUR
50+5.94 EUR
100+5.8 EUR
480+5.48 EUR
960+5.35 EUR
1440+5.27 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
CY62137FV30LL-45ZSXA CY62137FV30LL-45ZSXA Infineon Technologies Infineon-CY62137FV30_MoBL_Automotive_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccfd7a4737&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1370KV25-167AXC CY7C1370KV25-167AXC Infineon Technologies download Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1370KV25-200BZC CY7C1370KV25-200BZC Infineon Technologies download Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 272 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.87 EUR
10+11.96 EUR
25+11.59 EUR
50+11.32 EUR
136+10.92 EUR
272+10.65 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1371KVE33-100AXI CY7C1371KVE33-100AXI Infineon Technologies Infineon-CY7C1371KV33_CY7C1371KVE33_CY7C1373KV33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed99c465b40&utm_source=cypress&utm_medium=refe Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1370KV33-250AXC CY7C1370KV33-250AXC Infineon Technologies Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_ Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUCN04S7L005ATMA1 IAUCN04S7L005ATMA1 Infineon Technologies Infineon-IAUCN04S7L005-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ed07d31a6c Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 430A (Tj)
Rds On (Max) @ Id, Vgs: 0.52mOhm @ 88A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 95µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUCN04S7L005ATMA1 IAUCN04S7L005ATMA1 Infineon Technologies Infineon-IAUCN04S7L005-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ed07d31a6c Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 430A (Tj)
Rds On (Max) @ Id, Vgs: 0.52mOhm @ 88A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 95µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 4306 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.87 EUR
10+2.81 EUR
100+1.94 EUR
500+1.6 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IAUCN04S7L006ATMA1 IAUCN04S7L006ATMA1 Infineon Technologies Infineon-IAUCN04S7L006-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ecfcd81a69 Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.16 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IAUCN04S7L006ATMA1 IAUCN04S7L006ATMA1 Infineon Technologies Infineon-IAUCN04S7L006-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ecfcd81a69 Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Qualification: AEC-Q101
auf Bestellung 5106 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.78 EUR
10+2.07 EUR
100+1.67 EUR
500+1.42 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IAUCN04S7N006ATMA1 IAUCN04S7N006ATMA1 Infineon Technologies Infineon-IAUCN04S7N006-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ecc1f21a57 Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.21 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IAUCN04S7N006ATMA1 IAUCN04S7N006ATMA1 Infineon Technologies Infineon-IAUCN04S7N006-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ecc1f21a57 Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.8 EUR
10+2.08 EUR
100+1.74 EUR
500+1.42 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IAUCN04S7L009ATMA1 IAUCN04S7L009ATMA1 Infineon Technologies Infineon-IAUCN04S7L009-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ecf38a1a66 Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 275A (Tj)
Rds On (Max) @ Id, Vgs: 0.91mOhm @ 88A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 60µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5704 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUCN04S7L009ATMA1 IAUCN04S7L009ATMA1 Infineon Technologies Infineon-IAUCN04S7L009-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ecf38a1a66 Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 275A (Tj)
Rds On (Max) @ Id, Vgs: 0.91mOhm @ 88A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 60µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5704 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 172 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.2 EUR
12+1.57 EUR
100+1.25 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
BTG7007A1EPWXUMA1 BTG7007A1EPWXUMA1 Infineon Technologies Infineon-BTG7007A-1EPW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8caa022e018cee05d3221e64 Description: IC PWR SWITCH N-CHAN 1:1 14TSSOP
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 8Ohm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): 5V ~ 28V
Current - Output (Max): 10.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.94 EUR
6000+1.91 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BTG7007A1EPWXUMA1 BTG7007A1EPWXUMA1 Infineon Technologies Infineon-BTG7007A-1EPW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8caa022e018cee05d3221e64 Description: IC PWR SWITCH N-CHAN 1:1 14TSSOP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 8Ohm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): 5V ~ 28V
Current - Output (Max): 10.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 6845 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.75 EUR
10+2.79 EUR
25+2.55 EUR
100+2.29 EUR
250+2.16 EUR
500+2.08 EUR
1000+2.02 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS10DHSS33 S29GL01GS10DHSS33 Infineon Technologies Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FF50R12RT4HOSA1 FF50R12RT4HOSA1 Infineon Technologies Infineon-FF50R12RT4-DS-v02_00-en_de.pdf?fileId=db3a304327b89750012805fb1a356147 Description: IGBT MOD 1200V 50A 285W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 285 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
auf Bestellung 7083 Stücke:
Lieferzeit 10-14 Tag (e)
4+128.08 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IRG4BC20WPBF IRG4BC20WPBF Infineon Technologies Infineon-IRG4BC20W-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a40153563f8f5b226b Description: IGBT 600V 13A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/110ns
Switching Energy: 60µJ (on), 80µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 26 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 60 W
auf Bestellung 6500 Stücke:
Lieferzeit 10-14 Tag (e)
229+1.99 EUR
Mindestbestellmenge: 229
Im Einkaufswagen  Stück im Wert von  UAH
ESDF200B1W0201E6327XTSA1 ESDF200B1W0201E6327XTSA1 Infineon Technologies Infineon-ESDF200-B1-W0201-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85ecb3470185eea14d9900aa Description: TVS DIODE 3.3VWM 6VC SGWLL32
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 65pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-3-2
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 6V (Typ)
Power - Peak Pulse: 66W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESDF200B1W0201E6327XTSA1 ESDF200B1W0201E6327XTSA1 Infineon Technologies Infineon-ESDF200-B1-W0201-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85ecb3470185eea14d9900aa Description: TVS DIODE 3.3VWM 6VC SGWLL32
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 65pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-3-2
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 6V (Typ)
Power - Peak Pulse: 66W
Power Line Protection: No
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
87+0.2 EUR
141+0.12 EUR
500+0.091 EUR
1000+0.068 EUR
2000+0.066 EUR
5000+0.06 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
IGCM04F60HAXKMA1 IGCM04F60HAXKMA1 Infineon Technologies IGCM04F60HA.pdf Description: IGBT 600V 24MDIP
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
auf Bestellung 778 Stücke:
Lieferzeit 10-14 Tag (e)
63+8.03 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
EVALHBBC1EDN8550BTOBO1 EVALHBBC1EDN8550BTOBO1 Infineon Technologies Infineon-ApplicationNote_evaluation_board_EVAL_HB_BC_1EDN8550B-AN-v02_00-EN.pdf?fileId=5546d46266a498f50166ef75bd7e183f Description: EVAL 1ED8550 EICEDRIVER
Packaging: Bulk
Function: Half H-Bridge Driver (External FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1EDN8550B, BSC026N08NS5, XMC1100
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+192.88 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IQD016N08NM5CGATMA1 IQD016N08NM5CGATMA1 Infineon Technologies Infineon-IQD016N08NM5CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188af8cb6f20539 Description: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc)
Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IQD016N08NM5CGATMA1 IQD016N08NM5CGATMA1 Infineon Technologies Infineon-IQD016N08NM5CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188af8cb6f20539 Description: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc)
Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
auf Bestellung 4760 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.28 EUR
10+4.76 EUR
25+4.38 EUR
100+3.96 EUR
250+3.76 EUR
500+3.64 EUR
1000+3.54 EUR
2500+3.53 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IQE036N08NM6CGATMA1 Infineon Technologies Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IQE036N08NM6ATMA1 Infineon Technologies Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IQE036N08NM6CGSCATMA1 Infineon Technologies Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IQE036N08NM6SCATMA1 Infineon Technologies Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB136N08N3 G IPB136N08N3 G Infineon Technologies IP%28P%2CI%2CB%29136N08N3_G.pdf Description: MOSFET N-CH 80V 45A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 45A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB136N08N3 G IPB136N08N3 G Infineon Technologies IP%28P%2CI%2CB%29136N08N3_G.pdf Description: MOSFET N-CH 80V 45A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 45A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FR900R12IP4DBPSA1 FR900R12IP4DBPSA1 Infineon Technologies Infineon-FR900R12IP4D-DataSheet-v03_00-EN.pdf?fileId=5546d4626c1f3dc3016cae709c2a37eb Description: IGBT MODULE PP IHM I XHP 1 7KV
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Brake Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3-1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
1+2060.24 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TLE4973R120T5S0010XUMA1 TLE4973R120T5S0010XUMA1 Infineon Technologies TLE4973-RyyyT5-S0010_Rev3.10_11-30-23.pdf Description: CURRENT SENSOR HE PG-TISON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4973R120T5S0010XUMA1 TLE4973R120T5S0010XUMA1 Infineon Technologies TLE4973-RyyyT5-S0010_Rev3.10_11-30-23.pdf Description: CURRENT SENSOR HE PG-TISON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
auf Bestellung 403 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.76 EUR
5+7.88 EUR
10+7.56 EUR
25+7.17 EUR
50+6.9 EUR
100+6.65 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STK17T88-RF25 STK17T88-RF25 Infineon Technologies STK17T88.pdf Description: IC NVSRAM 256KBIT PAR 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STK17T88-RF25I STK17T88-RF25I Infineon Technologies STK17T88.pdf Description: IC NVSRAM 256KBIT PAR 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STK17TA8-RF25 STK17TA8-RF25 Infineon Technologies STK17TA8.pdf Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STK17TA8-RF25I STK17TA8-RF25I Infineon Technologies STK17TA8.pdf Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY9BF316SPMC-GK7E1 CY9BF316SPMC-GK7E1 Infineon Technologies Infineon-CY9B310T_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede998d6386 Description: IC MCU 32BIT 512KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 122
DigiKey Programmable: Not Verified
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
1+22.79 EUR
10+20.95 EUR
60+20.09 EUR
120+17.7 EUR
240+16.83 EUR
480+15.74 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CY9BF316NPQC-G-JNE2 CY9BF316NPQC-G-JNE2 Infineon Technologies Infineon-CY9B310R_Series_32_Bit_ARM_Cortex_M3_FM3_Microcontroller-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf3ea06447&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 544KB FLASH 100PQFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-PQFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY9BF316NPMC-G-JNE1 CY9BF316NPMC-G-JNE1 Infineon Technologies Infineon-CY9B310R_Series_32_Bit_ARM_Cortex_M3_FM3_Microcontroller-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf3ea06447 Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY9BF316NBGL-GK9E1 CY9BF316NBGL-GK9E1 Infineon Technologies Description: IC MCU 32BIT 544KB FLASH 112BGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY9BF316TBGL-GK7E1 CY9BF316TBGL-GK7E1 Infineon Technologies Infineon-CY9B310T_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede998d6386&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 512KB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 154
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY9BF315NBGL-GK9E1 CY9BF315NBGL-GK9E1 Infineon Technologies Description: IC MCU 32BIT 416KB FLASH 112BGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY9BF315NPMC-G-JNE2 CY9BF315NPMC-G-JNE2 Infineon Technologies Infineon-CY9B310R_Series_32_Bit_ARM_Cortex_M3_FM3_Microcontroller-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf3ea06447&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 416KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FZ1200R17KF6CB2NOSA1 FZ1200R17KF6C_B2_Rev2.1_2013-11-25.pdf
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.2kA
NTC Thermistor: No
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 9600 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 79 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FZ1600R12KL4CNOSA1 FZ1600R12KL4C_Rev3.1_2013-10-02.pdf
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 1600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 1.6kA
NTC Thermistor: No
Current - Collector (Ic) (Max): 2450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 10000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GATELEAD14231XPSA1
GATELEAD14231XPSA1
Hersteller: Infineon Technologies
Description: ACCY GATE LEAD
Packaging: Tray
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+42.26 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GATELEAD14232XPSA1
GATELEAD14232XPSA1
Hersteller: Infineon Technologies
Description: ACCY GATE LEAD
Packaging: Tray
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+42.26 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPB096N03LGATMA1 IP%28B%2CP%29096N03L_G.pdf
IPB096N03LGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 35A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R110CFDAAKSA1 Infineon-IPX65R110CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136ba7c820925a5
IPP65R110CFDAAKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 31.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO220-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA65R110CFDXKSA2 DS_IPX65R110CFD_2_61.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30433004641301306abd8e2041b1
IPA65R110CFDXKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 31.2A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 34.7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
auf Bestellung 513 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.85 EUR
50+4.68 EUR
100+4.28 EUR
500+3.57 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
ND104N18KHPSA1 INFNS29282-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.8KV 104A PB20-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 104A
Supplier Device Package: BG-PB20-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1372KV33-167AXI Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_
CY7C1372KV33-167AXI
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
auf Bestellung 466 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+41.25 EUR
10+38.15 EUR
25+36.93 EUR
72+35.53 EUR
144+34.64 EUR
288+34.44 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1350G-133AXI Infineon-CY7C1350G_4-Mbit_(128_K_36)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec1032c35ab
CY7C1350G-133AXI
Hersteller: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 4 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
auf Bestellung 343 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.68 EUR
10+2.5 EUR
25+2.43 EUR
50+2.38 EUR
144+2.29 EUR
288+2.24 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1350G-133AXI Infineon-CY7C1350G_4-Mbit_(128_K_36)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec1032c35ab
CY7C1350G-133AXI
Hersteller: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 4 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1356C-200AXI Infineon-CY7C1354C_CY7C1356C_9_MBIT_(256K_X_36_512K_X_18)_PIPELINED_SRAM_WITH_NOBL_ARCHITECTURE-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec11af735c5
CY7C1356C-200AXI
Hersteller: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.2 ns
Memory Organization: 512K x 18
DigiKey Programmable: Not Verified
auf Bestellung 144 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.26 EUR
10+15.66 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1354CV25-166AXC download
CY7C1354CV25-166AXC
Hersteller: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
auf Bestellung 306 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+19.54 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1371KV33-133AXC Infineon-CY7C1371KV33_CY7C1371KVE33_CY7C1373KV33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed99c465b40&utm_source=cypress&utm_medium=refe
CY7C1371KV33-133AXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 144 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+40.53 EUR
10+37.49 EUR
25+36.29 EUR
72+35.92 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1351G-100AXC Infineon-CY7C1351G_4-Mbit_(128_K_36)_Flow-through_SRAM_with_NoBL_Architecture-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0f16b359c
CY7C1351G-100AXC
Hersteller: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62147EV30LL-45B2XI CY62147EV30_MoBL_RevT_6-26-20.pdf
CY62147EV30LL-45B2XI
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 1619 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.74 EUR
10+6.27 EUR
25+6.08 EUR
50+5.94 EUR
100+5.8 EUR
480+5.48 EUR
960+5.35 EUR
1440+5.27 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
CY62137FV30LL-45ZSXA Infineon-CY62137FV30_MoBL_Automotive_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccfd7a4737&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62137FV30LL-45ZSXA
Hersteller: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1370KV25-167AXC download
CY7C1370KV25-167AXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1370KV25-200BZC download
CY7C1370KV25-200BZC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 272 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.87 EUR
10+11.96 EUR
25+11.59 EUR
50+11.32 EUR
136+10.92 EUR
272+10.65 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1371KVE33-100AXI Infineon-CY7C1371KV33_CY7C1371KVE33_CY7C1373KV33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed99c465b40&utm_source=cypress&utm_medium=refe
CY7C1371KVE33-100AXI
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1370KV33-250AXC Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_
CY7C1370KV33-250AXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUCN04S7L005ATMA1 Infineon-IAUCN04S7L005-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ed07d31a6c
IAUCN04S7L005ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 430A (Tj)
Rds On (Max) @ Id, Vgs: 0.52mOhm @ 88A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 95µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUCN04S7L005ATMA1 Infineon-IAUCN04S7L005-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ed07d31a6c
IAUCN04S7L005ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 430A (Tj)
Rds On (Max) @ Id, Vgs: 0.52mOhm @ 88A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 95µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 4306 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.87 EUR
10+2.81 EUR
100+1.94 EUR
500+1.6 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IAUCN04S7L006ATMA1 Infineon-IAUCN04S7L006-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ecfcd81a69
IAUCN04S7L006ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.16 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IAUCN04S7L006ATMA1 Infineon-IAUCN04S7L006-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ecfcd81a69
IAUCN04S7L006ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Qualification: AEC-Q101
auf Bestellung 5106 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.78 EUR
10+2.07 EUR
100+1.67 EUR
500+1.42 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IAUCN04S7N006ATMA1 Infineon-IAUCN04S7N006-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ecc1f21a57
IAUCN04S7N006ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.21 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IAUCN04S7N006ATMA1 Infineon-IAUCN04S7N006-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ecc1f21a57
IAUCN04S7N006ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.8 EUR
10+2.08 EUR
100+1.74 EUR
500+1.42 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IAUCN04S7L009ATMA1 Infineon-IAUCN04S7L009-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ecf38a1a66
IAUCN04S7L009ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 275A (Tj)
Rds On (Max) @ Id, Vgs: 0.91mOhm @ 88A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 60µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5704 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUCN04S7L009ATMA1 Infineon-IAUCN04S7L009-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ecf38a1a66
IAUCN04S7L009ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 275A (Tj)
Rds On (Max) @ Id, Vgs: 0.91mOhm @ 88A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 60µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5704 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 172 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.2 EUR
12+1.57 EUR
100+1.25 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
BTG7007A1EPWXUMA1 Infineon-BTG7007A-1EPW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8caa022e018cee05d3221e64
BTG7007A1EPWXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 14TSSOP
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 8Ohm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): 5V ~ 28V
Current - Output (Max): 10.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.94 EUR
6000+1.91 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BTG7007A1EPWXUMA1 Infineon-BTG7007A-1EPW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8caa022e018cee05d3221e64
BTG7007A1EPWXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 14TSSOP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 8Ohm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): 5V ~ 28V
Current - Output (Max): 10.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 6845 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.75 EUR
10+2.79 EUR
25+2.55 EUR
100+2.29 EUR
250+2.16 EUR
500+2.08 EUR
1000+2.02 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS10DHSS33
S29GL01GS10DHSS33
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FF50R12RT4HOSA1 Infineon-FF50R12RT4-DS-v02_00-en_de.pdf?fileId=db3a304327b89750012805fb1a356147
FF50R12RT4HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 50A 285W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 285 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
auf Bestellung 7083 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+128.08 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IRG4BC20WPBF Infineon-IRG4BC20W-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a40153563f8f5b226b
IRG4BC20WPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 13A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/110ns
Switching Energy: 60µJ (on), 80µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 26 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 60 W
auf Bestellung 6500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
229+1.99 EUR
Mindestbestellmenge: 229
Im Einkaufswagen  Stück im Wert von  UAH
ESDF200B1W0201E6327XTSA1 Infineon-ESDF200-B1-W0201-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85ecb3470185eea14d9900aa
ESDF200B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 6VC SGWLL32
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 65pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-3-2
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 6V (Typ)
Power - Peak Pulse: 66W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESDF200B1W0201E6327XTSA1 Infineon-ESDF200-B1-W0201-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85ecb3470185eea14d9900aa
ESDF200B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 6VC SGWLL32
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 65pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-3-2
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 6V (Typ)
Power - Peak Pulse: 66W
Power Line Protection: No
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
87+0.2 EUR
141+0.12 EUR
500+0.091 EUR
1000+0.068 EUR
2000+0.066 EUR
5000+0.06 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
IGCM04F60HAXKMA1 IGCM04F60HA.pdf
IGCM04F60HAXKMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 24MDIP
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
auf Bestellung 778 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+8.03 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
EVALHBBC1EDN8550BTOBO1 Infineon-ApplicationNote_evaluation_board_EVAL_HB_BC_1EDN8550B-AN-v02_00-EN.pdf?fileId=5546d46266a498f50166ef75bd7e183f
EVALHBBC1EDN8550BTOBO1
Hersteller: Infineon Technologies
Description: EVAL 1ED8550 EICEDRIVER
Packaging: Bulk
Function: Half H-Bridge Driver (External FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1EDN8550B, BSC026N08NS5, XMC1100
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+192.88 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IQD016N08NM5CGATMA1 Infineon-IQD016N08NM5CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188af8cb6f20539
IQD016N08NM5CGATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc)
Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IQD016N08NM5CGATMA1 Infineon-IQD016N08NM5CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188af8cb6f20539
IQD016N08NM5CGATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc)
Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
auf Bestellung 4760 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.28 EUR
10+4.76 EUR
25+4.38 EUR
100+3.96 EUR
250+3.76 EUR
500+3.64 EUR
1000+3.54 EUR
2500+3.53 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IQE036N08NM6CGATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IQE036N08NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IQE036N08NM6CGSCATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IQE036N08NM6SCATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB136N08N3 G IP%28P%2CI%2CB%29136N08N3_G.pdf
IPB136N08N3 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 45A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 45A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB136N08N3 G IP%28P%2CI%2CB%29136N08N3_G.pdf
IPB136N08N3 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 45A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 45A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FR900R12IP4DBPSA1 Infineon-FR900R12IP4D-DataSheet-v03_00-EN.pdf?fileId=5546d4626c1f3dc3016cae709c2a37eb
FR900R12IP4DBPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE PP IHM I XHP 1 7KV
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Brake Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3-1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2060.24 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TLE4973R120T5S0010XUMA1 TLE4973-RyyyT5-S0010_Rev3.10_11-30-23.pdf
TLE4973R120T5S0010XUMA1
Hersteller: Infineon Technologies
Description: CURRENT SENSOR HE PG-TISON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4973R120T5S0010XUMA1 TLE4973-RyyyT5-S0010_Rev3.10_11-30-23.pdf
TLE4973R120T5S0010XUMA1
Hersteller: Infineon Technologies
Description: CURRENT SENSOR HE PG-TISON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
auf Bestellung 403 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.76 EUR
5+7.88 EUR
10+7.56 EUR
25+7.17 EUR
50+6.9 EUR
100+6.65 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STK17T88-RF25 STK17T88.pdf
STK17T88-RF25
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STK17T88-RF25I STK17T88.pdf
STK17T88-RF25I
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STK17TA8-RF25 STK17TA8.pdf
STK17TA8-RF25
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STK17TA8-RF25I STK17TA8.pdf
STK17TA8-RF25I
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY9BF316SPMC-GK7E1 Infineon-CY9B310T_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede998d6386
CY9BF316SPMC-GK7E1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 122
DigiKey Programmable: Not Verified
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.79 EUR
10+20.95 EUR
60+20.09 EUR
120+17.7 EUR
240+16.83 EUR
480+15.74 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CY9BF316NPQC-G-JNE2 Infineon-CY9B310R_Series_32_Bit_ARM_Cortex_M3_FM3_Microcontroller-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf3ea06447&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF316NPQC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 100PQFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-PQFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY9BF316NPMC-G-JNE1 Infineon-CY9B310R_Series_32_Bit_ARM_Cortex_M3_FM3_Microcontroller-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf3ea06447
CY9BF316NPMC-G-JNE1
Hersteller: Infineon Technologies
Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY9BF316NBGL-GK9E1
CY9BF316NBGL-GK9E1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 112BGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY9BF316TBGL-GK7E1 Infineon-CY9B310T_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede998d6386&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF316TBGL-GK7E1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 154
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY9BF315NBGL-GK9E1
CY9BF315NBGL-GK9E1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 416KB FLASH 112BGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY9BF315NPMC-G-JNE2 Infineon-CY9B310R_Series_32_Bit_ARM_Cortex_M3_FM3_Microcontroller-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf3ea06447&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF315NPMC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 416KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 249 498 696 697 698 699 700 701 702 703 704 705 706 747 996 1245 1494 1743 1992 2241 2490 2499  [ Nächste Seite >> ]