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FS100R12KE3BOSA1 Infineon Technologies INFNS28508-1.pdf?t.download=true&u=5oefqw Description: FS100R12 - IGBT MODULE
Packaging: Bulk
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FS100R12N2T4BDLA1 Infineon Technologies Infineon-FS100R12N2T4P-DS-v02_00-JA.pdf?fileId=5546d462689a790c016939d85f626b3e Description: FS100R12 - IGBT MODULE
Packaging: Bulk
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FS100R12N2T4B11BOSA1 Infineon Technologies Infineon-FS100R12N2T4-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163a6e8cdc61038 Description: FS100R12 - IGBT MODULE
Packaging: Bulk
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FS100R12N2T4PBPSA1 Infineon Technologies Infineon-FS100R12N2T4P-DS-v02_00-JA.pdf?fileId=5546d462689a790c016939d85f626b3e Description: LOW POWER ECONO
Packaging: Bulk
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FS100R12KT4GB11BOSA1 FS100R12KT4GB11BOSA1 Infineon Technologies Infineon-FS100R12KT4G_B11-DS-v02_00-en_de.pdf?fileId=db3a3043156fd5730116191497ce1c8e Description: IGBT MOD 1200V 100A 515W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
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S29GL128S10DHI013 S29GL128S10DHI013 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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S29GL128S10DHI013 S29GL128S10DHI013 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Cut Tape (CT)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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25+8.19 EUR
50+8.13 EUR
100+7.3 EUR
250+7.27 EUR
500+6.82 EUR
1000+6.53 EUR
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S80KS5123GABHV023 S80KS5123GABHV023 Infineon Technologies Infineon-S80KS5123_1.8_V_512-Mbit_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81228a00795 Description: IC PSRAM 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S80KS5123GABHA023 S80KS5123GABHA023 Infineon Technologies S80KS5123.pdf Description: IC PSRAM 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S80KS5123GABHB023 S80KS5123GABHB023 Infineon Technologies S80KS5123.pdf Description: IC PSRAM 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S80KS5123GABHM023 S80KS5123GABHM023 Infineon Technologies S80KS5123.pdf Description: IC PSRAM 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE92464EDXUMA1 TLE92464EDXUMA1 Infineon Technologies Infineon-TLE92464ED-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e00178c67d63325b93 Description: TRANSMISSION_ICS PG-DSO-36
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 215mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 2.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-36-72
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Current, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
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10+15.25 EUR
25+13.64 EUR
100+11.84 EUR
250+10.96 EUR
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TLE92464EDHPEVALBRDTOBO1 TLE92464EDHPEVALBRDTOBO1 Infineon Technologies Infineon-Next-Generation-Solenoid-Driver-Evaluation-Kit-TLE92464ED-TLE92466ED-UserManual-v01_00-EN.pdf?fileId=5546d4627956d53f0179a35c55ba0baf Description: EVAL BOARD FOR TLE92464EDHP ARDU
Packaging: Bulk
Function: Solenoid Controller/Driver
Type: Power Management
Utilized IC / Part: TLE92464EDHP
Supplied Contents: Board(s)
Primary Attributes: 40V Supply
Embedded: No
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IRLL3303TRPBF IRLL3303TRPBF Infineon Technologies irll3303pbf.pdf?fileId=5546d462533600a4015356646e3a25dd description Description: MOSFET N-CH 30V 4.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
Produkt ist nicht verfügbar
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IRLL3303TRPBF IRLL3303TRPBF Infineon Technologies irll3303pbf.pdf?fileId=5546d462533600a4015356646e3a25dd description Description: MOSFET N-CH 30V 4.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
Produkt ist nicht verfügbar
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IRGP4620DPBF IRGP4620DPBF Infineon Technologies IRGx4620D%28-E%29PbF.pdf Description: IGBT 600V 32A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 31ns/83ns
Switching Energy: 75µJ (on), 225µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 140 W
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IRGP4620DPBF IRGP4620DPBF Infineon Technologies IRGx4620D%28-E%29PbF.pdf Description: IGBT 600V 32A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 31ns/83ns
Switching Energy: 75µJ (on), 225µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 140 W
Produkt ist nicht verfügbar
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CYW920829M2EVK-02 CYW920829M2EVK-02 Infineon Technologies Infineon-AIROC_TM_CYW20829_Bluetooth_R_LE_SoC_Evaluation_Kit_CYW920829M2EVK-02_Quick_start_guide-UserManual-v02_00-EN.pdf?fileId=8ac78c8c8929aa4d018a16f726c46b26 Description: EVAL BOARD FOR CYW20829
Packaging: Box
For Use With/Related Products: CYW20829
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5.x (BLE)
Supplied Contents: Board(s), Cable(s), Accessories
Contents: Board(s), Cable(s), Accessories
Utilized IC / Part: CYW20829
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10+88.05 EUR
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IMBG65R007M2HXTMA1 IMBG65R007M2HXTMA1 Infineon Technologies infineon-imbg65r007m2h-datasheet-en.pdf Description: SICFET N-CH 650V 238A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 146.3A, 18V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.97mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
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IMBG65R007M2HXTMA1 IMBG65R007M2HXTMA1 Infineon Technologies infineon-imbg65r007m2h-datasheet-en.pdf Description: SICFET N-CH 650V 238A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 146.3A, 18V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.97mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
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IMW65R020M2HXKSA1 IMW65R020M2HXKSA1 Infineon Technologies infineon-imw65r020m2h-datasheet-en.pdf Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
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CY8C4124PVI-442T CY8C4124PVI-442T Infineon Technologies Infineon-PSoC_4_PSoC_4100_Family-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec86cc240d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 16KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
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CY8C4124PVI-442T CY8C4124PVI-442T Infineon Technologies Infineon-PSoC_4_PSoC_4100_Family-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec86cc240d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 16KB FLASH 28SSOP
Packaging: Cut Tape (CT)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
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4+5.3 EUR
10+3.99 EUR
25+3.66 EUR
100+3.3 EUR
250+3.13 EUR
500+3.02 EUR
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CY8C4124PVQ-432 CY8C4124PVQ-432 Infineon Technologies Infineon-PSoC_4_PSoC_4100_Family-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec86cc240d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 16KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
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CY8C4125AXI-S423 CY8C4125AXI-S423 Infineon Technologies Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 32KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 36
DigiKey Programmable: Not Verified
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CY7C1061GE30-10BVJXIT CY7C1061GE30-10BVJXIT Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061GE30-10BVXI CY7C1061GE30-10BVXI Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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ESD221U102ELE6327XTMA1 ESD221U102ELE6327XTMA1 Infineon Technologies Infineon-ESD221-U1-02EL-DS-v01_00-EN.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=5546d4624933b8750149760793950e88 Description: TVS DIODE 5.3VWM 11VC TSLP-2-19
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 38pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-2-19
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.7V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 60W
Power Line Protection: No
Produkt ist nicht verfügbar
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T1500N12TOFVTXPSA1 Infineon Technologies T1500N.pdf Description: SCR MODULE 1800V 3500A DO200AC
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 3500 A
Voltage - Off State: 1.8 kV
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CY9BFD18TBGL-GK7E1 CY9BFD18TBGL-GK7E1 Infineon Technologies Infineon-MB9BD10T_Series_32-Bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eded7cd63c9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 1MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 154
DigiKey Programmable: Not Verified
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CY62256VNLL-70ZXIT CY62256VNLL-70ZXIT Infineon Technologies Infineon-CY62256VN_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebee50c32d6 Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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S25FL256LAGBHM020 S25FL256LAGBHM020 Infineon Technologies INFN-S-A0017271261-1.pdf Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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S29GL01GS11DHI020 S29GL01GS11DHI020 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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S29GL01GT10DHI020 S29GL01GT10DHI020 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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CY9BF166KZPMC-G-JNE2 CY9BF166KZPMC-G-JNE2 Infineon Technologies Description: IC MCU 32BIT 544KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 8x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 33
DigiKey Programmable: Not Verified
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REFSSCBACDC1PH16ATOBO1 REFSSCBACDC1PH16ATOBO1 Infineon Technologies Description: POWER MANAGEMENT IC DEVELOPMENT
Packaging: Box
Function: Electronic Circuit Breaker (ECB)
Type: Circuit Protection
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: Yes, MCU
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KITXMC48AUTBASEV3TOBO1 KITXMC48AUTBASEV3TOBO1 Infineon Technologies Infineon-XMC4800%20Automation%20Board-V2_PB-PB-v01_00-EN.pdf?fileId=5546d4625e763904015ec7925cbc2cdc Description: AUTOMATIONBOARD XMC4800 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Utilized IC / Part: XMC4800
Platform: AutomationBoard
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IPT067N20NM6ATMA1 IPT067N20NM6ATMA1 Infineon Technologies infineon-ipt067n20nm6-datasheet-en.pdf Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 126A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 251µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
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IPT067N20NM6ATMA1 IPT067N20NM6ATMA1 Infineon Technologies infineon-ipt067n20nm6-datasheet-en.pdf Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 126A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 251µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
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IPF067N20NM6ATMA1 IPF067N20NM6ATMA1 Infineon Technologies Infineon-IPF067N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d326b5b4a0c80 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 138A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 253µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
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IPF067N20NM6ATMA1 IPF067N20NM6ATMA1 Infineon Technologies Infineon-IPF067N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d326b5b4a0c80 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 138A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 253µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
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T1620N65TOFXPSA1 T1620N65TOFXPSA1 Infineon Technologies Infineon-T1620N65TOF%20PR-DS-v03_01-EN.pdf?fileId=db3a304331f858f401320548b00b0682 Description: SCR MODULE 6.5KV 2530A DO-200AE
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 36000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2290 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 2530 A
Voltage - Off State: 6.5 kV
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IRFH5304TRPBF IRFH5304TRPBF Infineon Technologies irfh5304pbf.pdf?fileId=5546d462533600a40153561b6a2a1ec7 Description: MOSFET N-CH 30V 22A/79A 8PQFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 47A, 10V
Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 10 V
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IDW50E60FKSA1 IDW50E60FKSA1 Infineon Technologies Infineon-IDW50E60-DS-v02_02-en.pdf?fileId=db3a30433cd75ebf013cf1ddd0fb255a Description: DIODE GEN PURP 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115 ns
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 50 A
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
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CY7C15632KV18-400BZC CY7C15632KV18-400BZC Infineon Technologies download Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CYW20702A1KWFBGT CYW20702A1KWFBGT Infineon Technologies Infineon-CYW20702_Single-Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1e1b067ee&utm_source=cypress&utm_medium=referral&utm_campaign=202 Description: IC RF TXRX+MCU BLUETOOTH 50WFBGA
Packaging: Cut Tape (CT)
Package / Case: 50-WFBGA
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.0 +EDR
Current - Receiving: 32mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 7
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART, USB
DigiKey Programmable: Not Verified
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13+1.43 EUR
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CYW20742A2KFB1GT CYW20742A2KFB1GT Infineon Technologies 5047 Description: IC RF SGL CHIP BLE 81FBGA
Packaging: Tape & Reel (TR)
Package / Case: 81-TFBGA
Mounting Type: Surface Mount
Supplier Device Package: 81-FBGA (8x8)
DigiKey Programmable: Not Verified
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FF3MR12KM1HHPSA1 FF3MR12KM1HHPSA1 Infineon Technologies Infineon-FF3MR12KM1H-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c8d2fe47b018dc60c91720d56 Description: MOSFET 2N-CH 1200V 190A AG62MMHB
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 24200pF @ 800V
Rds On (Max) @ Id, Vgs: 4.44mOhm @ 280A, 18V
Gate Charge (Qg) (Max) @ Vgs: 800nC @ 18V
Vgs(th) (Max) @ Id: 5.1V @ 112mA
Supplier Device Package: AG-62MMHB
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64-2127PBF Infineon Technologies Part_Number_Guide_Web.pdf Description: MOSFET N-CH 100V 190A D2PAK-7
Packaging: Tube
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S29GL064S80DHB020HA Infineon Technologies Description: INFINEON
Packaging: Bulk
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 80 ns
Memory Organization: 64Mb 8M x 8, 4M x 16
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S29GL256N11TFA013 S29GL256N11TFA013 Infineon Technologies Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S29GL256N11TFA023 S29GL256N11TFA023 Infineon Technologies Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S29GL256N11FFVR22 S29GL256N11FFVR22 Infineon Technologies Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL256N11FFA010 S29GL256N11FFA010 Infineon Technologies Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Grade: Automotive
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S29GL256N10TFI010 S29GL256N10TFI010 Infineon Technologies S29GL128N_256N_512N_RevB_1-8-16.pdf Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL256N10FFI010 S29GL256N10FFI010 Infineon Technologies S29GL128N_256N_512N_RevB_1-8-16.pdf Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Box
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL256N10FAI012 S29GL256N10FAI012 Infineon Technologies S29GL128N_256N_512N_RevB_1-8-16.pdf Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Bulk
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL256N11FAI020 S29GL256N11FAI020 Infineon Technologies S29GL128N_256N_512N_RevB_1-8-16.pdf Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Bulk
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL256N11TFIV20 S29GL256N11TFIV20 Infineon Technologies S29GL128N_256N_512N_RevB_1-8-16.pdf Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Bulk
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL256N90FFIR20 S29GL256N90FFIR20 Infineon Technologies download Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FS100R12KE3BOSA1 INFNS28508-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: FS100R12 - IGBT MODULE
Packaging: Bulk
auf Bestellung 102 Stücke:
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Anzahl Preis
3+176.73 EUR
Mindestbestellmenge: 3
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FS100R12N2T4BDLA1 Infineon-FS100R12N2T4P-DS-v02_00-JA.pdf?fileId=5546d462689a790c016939d85f626b3e
Hersteller: Infineon Technologies
Description: FS100R12 - IGBT MODULE
Packaging: Bulk
auf Bestellung 36 Stücke:
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Anzahl Preis
3+211.48 EUR
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FS100R12N2T4B11BOSA1 Infineon-FS100R12N2T4-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163a6e8cdc61038
Hersteller: Infineon Technologies
Description: FS100R12 - IGBT MODULE
Packaging: Bulk
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Anzahl Preis
3+212.62 EUR
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FS100R12N2T4PBPSA1 Infineon-FS100R12N2T4P-DS-v02_00-JA.pdf?fileId=5546d462689a790c016939d85f626b3e
Hersteller: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Bulk
auf Bestellung 69 Stücke:
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Anzahl Preis
3+210.04 EUR
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FS100R12KT4GB11BOSA1 Infineon-FS100R12KT4G_B11-DS-v02_00-en_de.pdf?fileId=db3a3043156fd5730116191497ce1c8e
FS100R12KT4GB11BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 100A 515W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
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Anzahl Preis
3+161.6 EUR
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S29GL128S10DHI013 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL128S10DHI013
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
auf Bestellung 4400 Stücke:
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Anzahl Preis
2200+6.32 EUR
Mindestbestellmenge: 2200
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S29GL128S10DHI013 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL128S10DHI013
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Cut Tape (CT)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
auf Bestellung 4400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.15 EUR
10+8.35 EUR
25+8.19 EUR
50+8.13 EUR
100+7.3 EUR
250+7.27 EUR
500+6.82 EUR
1000+6.53 EUR
Mindestbestellmenge: 2
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S80KS5123GABHV023 Infineon-S80KS5123_1.8_V_512-Mbit_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81228a00795
S80KS5123GABHV023
Hersteller: Infineon Technologies
Description: IC PSRAM 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S80KS5123GABHA023 S80KS5123.pdf
S80KS5123GABHA023
Hersteller: Infineon Technologies
Description: IC PSRAM 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S80KS5123GABHB023 S80KS5123.pdf
S80KS5123GABHB023
Hersteller: Infineon Technologies
Description: IC PSRAM 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S80KS5123GABHM023 S80KS5123.pdf
S80KS5123GABHM023
Hersteller: Infineon Technologies
Description: IC PSRAM 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE92464EDXUMA1 Infineon-TLE92464ED-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e00178c67d63325b93
TLE92464EDXUMA1
Hersteller: Infineon Technologies
Description: TRANSMISSION_ICS PG-DSO-36
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 215mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 2.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-36-72
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Current, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1123 Stücke:
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Anzahl Preis
1+21.51 EUR
10+15.25 EUR
25+13.64 EUR
100+11.84 EUR
250+10.96 EUR
500+10.43 EUR
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TLE92464EDHPEVALBRDTOBO1 Infineon-Next-Generation-Solenoid-Driver-Evaluation-Kit-TLE92464ED-TLE92466ED-UserManual-v01_00-EN.pdf?fileId=5546d4627956d53f0179a35c55ba0baf
TLE92464EDHPEVALBRDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLE92464EDHP ARDU
Packaging: Bulk
Function: Solenoid Controller/Driver
Type: Power Management
Utilized IC / Part: TLE92464EDHP
Supplied Contents: Board(s)
Primary Attributes: 40V Supply
Embedded: No
auf Bestellung 12 Stücke:
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Anzahl Preis
1+294.98 EUR
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IRLL3303TRPBF description irll3303pbf.pdf?fileId=5546d462533600a4015356646e3a25dd
IRLL3303TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 4.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
Produkt ist nicht verfügbar
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IRLL3303TRPBF description irll3303pbf.pdf?fileId=5546d462533600a4015356646e3a25dd
IRLL3303TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 4.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
Produkt ist nicht verfügbar
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IRGP4620DPBF IRGx4620D%28-E%29PbF.pdf
IRGP4620DPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 32A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 31ns/83ns
Switching Energy: 75µJ (on), 225µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 140 W
auf Bestellung 971 Stücke:
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Anzahl Preis
145+3.13 EUR
Mindestbestellmenge: 145
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IRGP4620DPBF IRGx4620D%28-E%29PbF.pdf
IRGP4620DPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 32A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 31ns/83ns
Switching Energy: 75µJ (on), 225µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 140 W
Produkt ist nicht verfügbar
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CYW920829M2EVK-02 Infineon-AIROC_TM_CYW20829_Bluetooth_R_LE_SoC_Evaluation_Kit_CYW920829M2EVK-02_Quick_start_guide-UserManual-v02_00-EN.pdf?fileId=8ac78c8c8929aa4d018a16f726c46b26
CYW920829M2EVK-02
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR CYW20829
Packaging: Box
For Use With/Related Products: CYW20829
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5.x (BLE)
Supplied Contents: Board(s), Cable(s), Accessories
Contents: Board(s), Cable(s), Accessories
Utilized IC / Part: CYW20829
auf Bestellung 22 Stücke:
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Anzahl Preis
1+88.26 EUR
10+88.05 EUR
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IMBG65R007M2HXTMA1 infineon-imbg65r007m2h-datasheet-en.pdf
IMBG65R007M2HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 650V 238A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 146.3A, 18V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.97mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
Produkt ist nicht verfügbar
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IMBG65R007M2HXTMA1 infineon-imbg65r007m2h-datasheet-en.pdf
IMBG65R007M2HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 650V 238A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 146.3A, 18V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.97mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
auf Bestellung 631 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+42.8 EUR
10+32.45 EUR
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IMW65R020M2HXKSA1 infineon-imw65r020m2h-datasheet-en.pdf
IMW65R020M2HXKSA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
auf Bestellung 286 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.96 EUR
30+12.78 EUR
120+11.07 EUR
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CY8C4124PVI-442T Infineon-PSoC_4_PSoC_4100_Family-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec86cc240d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4124PVI-442T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4124PVI-442T Infineon-PSoC_4_PSoC_4100_Family-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec86cc240d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4124PVI-442T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 28SSOP
Packaging: Cut Tape (CT)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
auf Bestellung 1001 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.3 EUR
10+3.99 EUR
25+3.66 EUR
100+3.3 EUR
250+3.13 EUR
500+3.02 EUR
Mindestbestellmenge: 4
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CY8C4124PVQ-432 Infineon-PSoC_4_PSoC_4100_Family-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec86cc240d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4124PVQ-432
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C4125AXI-S423 Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4125AXI-S423
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1061GE30-10BVJXIT Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061GE30-10BVJXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1061GE30-10BVXI Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061GE30-10BVXI
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ESD221U102ELE6327XTMA1 Infineon-ESD221-U1-02EL-DS-v01_00-EN.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=5546d4624933b8750149760793950e88
ESD221U102ELE6327XTMA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.3VWM 11VC TSLP-2-19
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 38pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-2-19
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.7V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 60W
Power Line Protection: No
Produkt ist nicht verfügbar
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T1500N12TOFVTXPSA1 T1500N.pdf
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 3500A DO200AC
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 3500 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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CY9BFD18TBGL-GK7E1 Infineon-MB9BD10T_Series_32-Bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eded7cd63c9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BFD18TBGL-GK7E1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 154
DigiKey Programmable: Not Verified
auf Bestellung 848 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+33.14 EUR
10+30.47 EUR
25+29.21 EUR
152+25.73 EUR
304+24.47 EUR
456+22.89 EUR
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CY62256VNLL-70ZXIT Infineon-CY62256VN_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebee50c32d6
CY62256VNLL-70ZXIT
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL256LAGBHM020 INFN-S-A0017271261-1.pdf
S25FL256LAGBHM020
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 628 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.46 EUR
10+6.02 EUR
25+5.84 EUR
50+5.7 EUR
100+5.57 EUR
338+5.33 EUR
Mindestbestellmenge: 3
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S29GL01GS11DHI020 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL01GS11DHI020
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
auf Bestellung 1188 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.11 EUR
10+15.88 EUR
25+15.38 EUR
50+15.01 EUR
100+14.64 EUR
260+14.14 EUR
520+13.81 EUR
Mindestbestellmenge: 2
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S29GL01GT10DHI020 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL01GT10DHI020
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
auf Bestellung 74 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.32 EUR
10+22.57 EUR
25+21.87 EUR
40+21.51 EUR
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CY9BF166KZPMC-G-JNE2
CY9BF166KZPMC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 8x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 33
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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REFSSCBACDC1PH16ATOBO1
REFSSCBACDC1PH16ATOBO1
Hersteller: Infineon Technologies
Description: POWER MANAGEMENT IC DEVELOPMENT
Packaging: Box
Function: Electronic Circuit Breaker (ECB)
Type: Circuit Protection
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: Yes, MCU
Produkt ist nicht verfügbar
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KITXMC48AUTBASEV3TOBO1 Infineon-XMC4800%20Automation%20Board-V2_PB-PB-v01_00-EN.pdf?fileId=5546d4625e763904015ec7925cbc2cdc
KITXMC48AUTBASEV3TOBO1
Hersteller: Infineon Technologies
Description: AUTOMATIONBOARD XMC4800 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Utilized IC / Part: XMC4800
Platform: AutomationBoard
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+349.76 EUR
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IPT067N20NM6ATMA1 infineon-ipt067n20nm6-datasheet-en.pdf
IPT067N20NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 126A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 251µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+5.38 EUR
Mindestbestellmenge: 2000
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IPT067N20NM6ATMA1 infineon-ipt067n20nm6-datasheet-en.pdf
IPT067N20NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 126A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 251µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
auf Bestellung 4849 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.75 EUR
10+8.09 EUR
100+6.62 EUR
500+6.52 EUR
Mindestbestellmenge: 2
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IPF067N20NM6ATMA1 Infineon-IPF067N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d326b5b4a0c80
IPF067N20NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 138A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 253µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
auf Bestellung 1000 Stücke:
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Anzahl Preis
1000+7.49 EUR
Mindestbestellmenge: 1000
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IPF067N20NM6ATMA1 Infineon-IPF067N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d326b5b4a0c80
IPF067N20NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 138A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 253µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
auf Bestellung 1756 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.89 EUR
10+10.93 EUR
100+8.12 EUR
500+7.49 EUR
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T1620N65TOFXPSA1 Infineon-T1620N65TOF%20PR-DS-v03_01-EN.pdf?fileId=db3a304331f858f401320548b00b0682
T1620N65TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 6.5KV 2530A DO-200AE
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 36000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2290 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 2530 A
Voltage - Off State: 6.5 kV
Produkt ist nicht verfügbar
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IRFH5304TRPBF irfh5304pbf.pdf?fileId=5546d462533600a40153561b6a2a1ec7
IRFH5304TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 22A/79A 8PQFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 47A, 10V
Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 10 V
auf Bestellung 10924 Stücke:
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Anzahl Preis
667+0.7 EUR
Mindestbestellmenge: 667
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IDW50E60FKSA1 Infineon-IDW50E60-DS-v02_02-en.pdf?fileId=db3a30433cd75ebf013cf1ddd0fb255a
IDW50E60FKSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115 ns
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 50 A
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
auf Bestellung 240 Stücke:
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Anzahl Preis
4+4.58 EUR
10+3.84 EUR
240+2.93 EUR
Mindestbestellmenge: 4
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CY7C15632KV18-400BZC download
CY7C15632KV18-400BZC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYW20702A1KWFBGT Infineon-CYW20702_Single-Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1e1b067ee&utm_source=cypress&utm_medium=referral&utm_campaign=202
CYW20702A1KWFBGT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 50WFBGA
Packaging: Cut Tape (CT)
Package / Case: 50-WFBGA
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.0 +EDR
Current - Receiving: 32mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 7
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART, USB
DigiKey Programmable: Not Verified
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
Mindestbestellmenge: 13
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CYW20742A2KFB1GT 5047
CYW20742A2KFB1GT
Hersteller: Infineon Technologies
Description: IC RF SGL CHIP BLE 81FBGA
Packaging: Tape & Reel (TR)
Package / Case: 81-TFBGA
Mounting Type: Surface Mount
Supplier Device Package: 81-FBGA (8x8)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FF3MR12KM1HHPSA1 Infineon-FF3MR12KM1H-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c8d2fe47b018dc60c91720d56
FF3MR12KM1HHPSA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V 190A AG62MMHB
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 24200pF @ 800V
Rds On (Max) @ Id, Vgs: 4.44mOhm @ 280A, 18V
Gate Charge (Qg) (Max) @ Vgs: 800nC @ 18V
Vgs(th) (Max) @ Id: 5.1V @ 112mA
Supplier Device Package: AG-62MMHB
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+564.92 EUR
10+523.87 EUR
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64-2127PBF Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 190A D2PAK-7
Packaging: Tube
Produkt ist nicht verfügbar
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S29GL064S80DHB020HA
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 80 ns
Memory Organization: 64Mb 8M x 8, 4M x 16
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S29GL256N11TFA013
S29GL256N11TFA013
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S29GL256N11TFA023
S29GL256N11TFA023
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S29GL256N11FFVR22
S29GL256N11FFVR22
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL256N11FFA010
S29GL256N11FFA010
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Grade: Automotive
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S29GL256N10TFI010 S29GL128N_256N_512N_RevB_1-8-16.pdf
S29GL256N10TFI010
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL256N10FFI010 S29GL128N_256N_512N_RevB_1-8-16.pdf
S29GL256N10FFI010
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Box
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL256N10FAI012 S29GL128N_256N_512N_RevB_1-8-16.pdf
S29GL256N10FAI012
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Bulk
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL256N11FAI020 S29GL128N_256N_512N_RevB_1-8-16.pdf
S29GL256N11FAI020
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Bulk
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL256N11TFIV20 S29GL128N_256N_512N_RevB_1-8-16.pdf
S29GL256N11TFIV20
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Bulk
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL256N90FFIR20 download
S29GL256N90FFIR20
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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