Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149885) > Seite 86 nach 2499
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SLE 66C681PE M5.1 | Infineon Technologies |
Description: IC SECURITY CTRLR 8/16BIT M5.1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| SLE 66C681PE MFC5.6 | Infineon Technologies |
Description: IC SECURITY CTRLR 8/16BIT MFC5.6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| SLE 66C681PE MFC5.8 | Infineon Technologies |
Description: IC SECURITY CTRLR 8/16BIT MFC5.8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| SLE 66C82P M5.1 | Infineon Technologies |
Description: IC SECURITY CTRLR 16BIT M5.1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| SLE 66CL80P M8.4 | Infineon Technologies |
Description: IC CONTROLLER DUAL 16BIT M8.4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| SLE 66CL80P NB | Infineon Technologies |
Description: IC CONTROLLER DUAL 16BIT |
Produkt ist nicht verfügbar |
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| SLE 66CL81P C | Infineon Technologies |
Description: IC SECURITY CONTROLLER 16BIT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| SLE 66CL81P MCC8 | Infineon Technologies |
Description: IC SECURITY CTRLR 16BIT MCC8-2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| SLE 66CL81P NB | Infineon Technologies |
Description: IC SECURITY CTRLR 16BIT WAFER |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| SLE 66CLX640P M8.4 | Infineon Technologies |
Description: IC SEC CTRLR DUAL 16BIT M8.4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| SLE 66CLX641P MCC8 | Infineon Technologies |
Description: IC SECURITY CTRLR 16BIT MCC8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| SLE 66CLX641P MFCC8 | Infineon Technologies |
Description: IC SECURITY CTRLR 16BIT MFCC8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| SLE 66CX162PE MFC5.6 | Infineon Technologies |
Description: IC SECURITY CTRLR 8/16BIT MFC5.6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| SLE 66CX162PE MFC5.8 | Infineon Technologies |
Description: IC SECURITY CTRLR 8/16BIT MFC5.8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| SLE 66CX322P M5.1 | Infineon Technologies | Description: IC SECURITY CTRLR 16BIT M5.1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| SLE 66CX642P M5.2 | Infineon Technologies |
Description: IC SECURITY CTRLR 16BIT M5.2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| SLE 66CX642P MFC5.8 | Infineon Technologies |
Description: IC SECURITY CTRLR 16BIT MFC5.8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| SLE 66CX680PE MFC5.6 | Infineon Technologies |
Description: IC SECURITY CTRLR 8/16BIT MFC5.6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| SLE 66CX680PE MFC5.8 | Infineon Technologies |
Description: IC SECURITY CTRLR 8/16BIT MFC5.8 |
Produkt ist nicht verfügbar |
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SLE 66R35 MCC8 | Infineon Technologies |
Description: IC RFID TRANSP 13.56MHZ MCC2-2-1Packaging: Tape & Reel (TR) Package / Case: MCC8 Chip Card Module Mounting Type: Surface Mount Frequency: 13.56MHz Type: RFID Transponder Standards: ISO 14443 Supplier Device Package: P-MCC8-2-3 Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SLE 66R35 MFCC1 | Infineon Technologies |
Description: IC RFID TRANSP 13.56MHZ MCC2-2-1 |
Produkt ist nicht verfügbar |
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| SLE 7736 C | Infineon Technologies |
Description: IC EEPROM COUNTER 237BIT C-PKG |
Produkt ist nicht verfügbar |
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| SLE 7737E M3.2 | Infineon Technologies | Description: IC EEPROM COUNTER 237BIT M3.2-6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| SLE 88CF4000P C | Infineon Technologies |
Description: IC SECURITY CTRLR 32BIT C-PKG |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| SLE 88CF4000P M5.1 | Infineon Technologies |
Description: IC SECURITY CTRLR 32BIT T-M5.1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| SLE 88CF4000P MFC5.8 | Infineon Technologies |
Description: IC SECURITY CTRLR 32BIT S-MFC5.8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| SLE 88CFX4000P C | Infineon Technologies |
Description: IC SECURITY CTRLR 32BIT C-PKG |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| SLE88CFX4000PM51ZZZA1 | Infineon Technologies |
Description: IC SECURITY CTRLR 32BIT T-M5.1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| SLE 88CX720P M5.3 | Infineon Technologies |
Description: IC SECURITY CTRLR 32BIT T-M5.3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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SMBD 7000 E6433 | Infineon Technologies |
Description: DIODE ARRAY GP 100V 200MA SOT23 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SMBT3904E6433HTMA1 | Infineon Technologies |
Description: TRANS NPN 40V 0.2A PG-SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 330 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SMBT3904PNE6327HTSA1 | Infineon Technologies |
Description: TRANS NPN/PNP 40V PG-SOT363-POPackaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 250mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT363-PO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SMBT3904SE6327HTSA1 | Infineon Technologies |
Description: TRANS 2NPN 40V 0.2A PG-SOT363-POPackaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 330mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: PG-SOT363-PO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SMBT 3904U E6327 | Infineon Technologies |
Description: TRANS 2NPN 40V 200MA PG-SC74-6Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 330mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: PG-SC74-6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SMBT3904UPNE6327HTSA1 | Infineon Technologies |
Description: TRANS NPN/PNP 40V 200MA PG-SC74Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 330mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: PG-SC74-6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SMBT 3906 E6767 | Infineon Technologies |
Description: TRANS PNP 40V 0.2A PG-SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 330 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SMBT3906SE6327HTSA1 | Infineon Technologies |
Description: TRANS 2PNP 40V 0.2A PG-SOT363-POPackaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 330mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT363-PO Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SMBT3906UE6327HTSA1 | Infineon Technologies |
Description: TRANS 2PNP 40V 200MA PG-SC74-6Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 330mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: PG-SC74-6 Part Status: Last Time Buy |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SMBTA06UPNE6327HTSA1 | Infineon Technologies |
Description: TRANS NPN/PNP 80V 500MA PG-SC74Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 330mW Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: PG-SC74-6 Part Status: Last Time Buy |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SMBTA42E6327HTSA1 | Infineon Technologies |
Description: TRANS NPN 300V 0.5A PG-SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Frequency - Transition: 70MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 360 mW |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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SMBTA 42 E6433 | Infineon Technologies |
Description: TRANS NPN 300V 0.5A PG-SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Frequency - Transition: 70MHz Supplier Device Package: PG-SOT23 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 360 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SMBTA 92 E6433 | Infineon Technologies |
Description: TRANS PNP 300V 0.5A PG-SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V Frequency - Transition: 50MHz Supplier Device Package: PG-SOT23 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 360 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SN7002N L6327 | Infineon Technologies |
Description: MOSFET N-CH 60V 200MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 26µA Supplier Device Package: PG-SOT23 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SN7002W E6327 | Infineon Technologies |
Description: MOSFET N-CH 60V 230MA SOT323-3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 230mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 26µA Supplier Device Package: PG-SOT323 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SP12 | Infineon Technologies |
Description: IC TIRE PRESSURE SENSOR PDSO-14 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SP12T-T1 | Infineon Technologies |
Description: IC TIRE PRESSURE SENSOR PDSO-14 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SP12T-T7 | Infineon Technologies |
Description: IC TIRE PRESSURE SENSOR PDSO-14 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| SP300V21E1060XT | Infineon Technologies | Description: IC TIRE PRESSURE SENSOR PDSO-14 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| SP300V21E106ZNT | Infineon Technologies | Description: IC TIRE PRESSURE SENSOR PDSO-14 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| SP300V21E1160NT | Infineon Technologies | Description: IC TIRE PRESSURE SENSOR PDSO-14 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| SP300V21E2060XT | Infineon Technologies | Description: IC TIRE PRESSURE SENSOR PDSO-14 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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SPB02N60S5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 1.8A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 80µA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SPB03N60S5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 3.2A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 135µA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SPB04N50C3ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 560V 4.5A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 200µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 560 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SPB04N60S5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 4.5A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 200µA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SPB07N60S5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 7.3A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 350µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SPB08P06P | Infineon Technologies |
Description: MOSFET P-CH 60V 8.8A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 6.2A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SPB08P06PGATMA1 | Infineon Technologies |
Description: MOSFET P-CH 60V 8.8A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 6.2A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SPB100N03S2-03 G | Infineon Technologies |
Description: MOSFET N-CH 30V 100A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3-2 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
|
SPB100N03S2L-03 G | Infineon Technologies |
Description: MOSFET N-CH 30V 100A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SLE 66C681PE M5.1 |
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Hersteller: Infineon Technologies
Description: IC SECURITY CTRLR 8/16BIT M5.1
Description: IC SECURITY CTRLR 8/16BIT M5.1
Produkt ist nicht verfügbar
Im Einkaufswagen
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| SLE 66C681PE MFC5.6 |
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Hersteller: Infineon Technologies
Description: IC SECURITY CTRLR 8/16BIT MFC5.6
Description: IC SECURITY CTRLR 8/16BIT MFC5.6
Produkt ist nicht verfügbar
Im Einkaufswagen
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| SLE 66C681PE MFC5.8 |
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Hersteller: Infineon Technologies
Description: IC SECURITY CTRLR 8/16BIT MFC5.8
Description: IC SECURITY CTRLR 8/16BIT MFC5.8
Produkt ist nicht verfügbar
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| SLE 66C82P M5.1 |
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Hersteller: Infineon Technologies
Description: IC SECURITY CTRLR 16BIT M5.1
Description: IC SECURITY CTRLR 16BIT M5.1
Produkt ist nicht verfügbar
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| SLE 66CL80P M8.4 |
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Hersteller: Infineon Technologies
Description: IC CONTROLLER DUAL 16BIT M8.4
Description: IC CONTROLLER DUAL 16BIT M8.4
Produkt ist nicht verfügbar
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| SLE 66CL80P NB |
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Hersteller: Infineon Technologies
Description: IC CONTROLLER DUAL 16BIT
Description: IC CONTROLLER DUAL 16BIT
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| SLE 66CL81P C |
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Hersteller: Infineon Technologies
Description: IC SECURITY CONTROLLER 16BIT
Description: IC SECURITY CONTROLLER 16BIT
Produkt ist nicht verfügbar
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| SLE 66CL81P MCC8 |
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Hersteller: Infineon Technologies
Description: IC SECURITY CTRLR 16BIT MCC8-2
Description: IC SECURITY CTRLR 16BIT MCC8-2
Produkt ist nicht verfügbar
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| SLE 66CL81P NB |
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Hersteller: Infineon Technologies
Description: IC SECURITY CTRLR 16BIT WAFER
Description: IC SECURITY CTRLR 16BIT WAFER
Produkt ist nicht verfügbar
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| SLE 66CLX640P M8.4 |
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Hersteller: Infineon Technologies
Description: IC SEC CTRLR DUAL 16BIT M8.4
Description: IC SEC CTRLR DUAL 16BIT M8.4
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| SLE 66CLX641P MCC8 |
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Hersteller: Infineon Technologies
Description: IC SECURITY CTRLR 16BIT MCC8
Description: IC SECURITY CTRLR 16BIT MCC8
Produkt ist nicht verfügbar
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| SLE 66CLX641P MFCC8 |
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Hersteller: Infineon Technologies
Description: IC SECURITY CTRLR 16BIT MFCC8
Description: IC SECURITY CTRLR 16BIT MFCC8
Produkt ist nicht verfügbar
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| SLE 66CX162PE MFC5.6 |
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Hersteller: Infineon Technologies
Description: IC SECURITY CTRLR 8/16BIT MFC5.6
Description: IC SECURITY CTRLR 8/16BIT MFC5.6
Produkt ist nicht verfügbar
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| SLE 66CX162PE MFC5.8 |
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Hersteller: Infineon Technologies
Description: IC SECURITY CTRLR 8/16BIT MFC5.8
Description: IC SECURITY CTRLR 8/16BIT MFC5.8
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| SLE 66CX322P M5.1 |
Hersteller: Infineon Technologies
Description: IC SECURITY CTRLR 16BIT M5.1
Description: IC SECURITY CTRLR 16BIT M5.1
Produkt ist nicht verfügbar
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| SLE 66CX642P M5.2 |
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Hersteller: Infineon Technologies
Description: IC SECURITY CTRLR 16BIT M5.2
Description: IC SECURITY CTRLR 16BIT M5.2
Produkt ist nicht verfügbar
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| SLE 66CX642P MFC5.8 |
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Hersteller: Infineon Technologies
Description: IC SECURITY CTRLR 16BIT MFC5.8
Description: IC SECURITY CTRLR 16BIT MFC5.8
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| SLE 66CX680PE MFC5.6 |
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Hersteller: Infineon Technologies
Description: IC SECURITY CTRLR 8/16BIT MFC5.6
Description: IC SECURITY CTRLR 8/16BIT MFC5.6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SLE 66CX680PE MFC5.8 |
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Hersteller: Infineon Technologies
Description: IC SECURITY CTRLR 8/16BIT MFC5.8
Description: IC SECURITY CTRLR 8/16BIT MFC5.8
Produkt ist nicht verfügbar
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| SLE 66R35 MCC8 |
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Hersteller: Infineon Technologies
Description: IC RFID TRANSP 13.56MHZ MCC2-2-1
Packaging: Tape & Reel (TR)
Package / Case: MCC8 Chip Card Module
Mounting Type: Surface Mount
Frequency: 13.56MHz
Type: RFID Transponder
Standards: ISO 14443
Supplier Device Package: P-MCC8-2-3
Part Status: Obsolete
Description: IC RFID TRANSP 13.56MHZ MCC2-2-1
Packaging: Tape & Reel (TR)
Package / Case: MCC8 Chip Card Module
Mounting Type: Surface Mount
Frequency: 13.56MHz
Type: RFID Transponder
Standards: ISO 14443
Supplier Device Package: P-MCC8-2-3
Part Status: Obsolete
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| SLE 66R35 MFCC1 |
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Hersteller: Infineon Technologies
Description: IC RFID TRANSP 13.56MHZ MCC2-2-1
Description: IC RFID TRANSP 13.56MHZ MCC2-2-1
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| SLE 7736 C |
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Hersteller: Infineon Technologies
Description: IC EEPROM COUNTER 237BIT C-PKG
Description: IC EEPROM COUNTER 237BIT C-PKG
Produkt ist nicht verfügbar
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| SLE 7737E M3.2 |
Hersteller: Infineon Technologies
Description: IC EEPROM COUNTER 237BIT M3.2-6
Description: IC EEPROM COUNTER 237BIT M3.2-6
Produkt ist nicht verfügbar
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| SLE 88CF4000P C |
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Hersteller: Infineon Technologies
Description: IC SECURITY CTRLR 32BIT C-PKG
Description: IC SECURITY CTRLR 32BIT C-PKG
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| SLE 88CF4000P M5.1 |
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Hersteller: Infineon Technologies
Description: IC SECURITY CTRLR 32BIT T-M5.1
Description: IC SECURITY CTRLR 32BIT T-M5.1
Produkt ist nicht verfügbar
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| SLE 88CF4000P MFC5.8 |
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Hersteller: Infineon Technologies
Description: IC SECURITY CTRLR 32BIT S-MFC5.8
Description: IC SECURITY CTRLR 32BIT S-MFC5.8
Produkt ist nicht verfügbar
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| SLE 88CFX4000P C |
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Hersteller: Infineon Technologies
Description: IC SECURITY CTRLR 32BIT C-PKG
Description: IC SECURITY CTRLR 32BIT C-PKG
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| SLE88CFX4000PM51ZZZA1 |
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Hersteller: Infineon Technologies
Description: IC SECURITY CTRLR 32BIT T-M5.1
Description: IC SECURITY CTRLR 32BIT T-M5.1
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| SLE 88CX720P M5.3 |
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Hersteller: Infineon Technologies
Description: IC SECURITY CTRLR 32BIT T-M5.3
Description: IC SECURITY CTRLR 32BIT T-M5.3
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| SMBD 7000 E6433 |
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Hersteller: Infineon Technologies
Description: DIODE ARRAY GP 100V 200MA SOT23
Description: DIODE ARRAY GP 100V 200MA SOT23
Produkt ist nicht verfügbar
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| SMBT3904E6433HTMA1 |
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Hersteller: Infineon Technologies
Description: TRANS NPN 40V 0.2A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 330 mW
Description: TRANS NPN 40V 0.2A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBT3904PNE6327HTSA1 |
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Hersteller: Infineon Technologies
Description: TRANS NPN/PNP 40V PG-SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
Description: TRANS NPN/PNP 40V PG-SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBT3904SE6327HTSA1 |
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Hersteller: Infineon Technologies
Description: TRANS 2NPN 40V 0.2A PG-SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: PG-SOT363-PO
Description: TRANS 2NPN 40V 0.2A PG-SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: PG-SOT363-PO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBT 3904U E6327 |
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Hersteller: Infineon Technologies
Description: TRANS 2NPN 40V 200MA PG-SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: PG-SC74-6
Description: TRANS 2NPN 40V 200MA PG-SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: PG-SC74-6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBT3904UPNE6327HTSA1 |
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Hersteller: Infineon Technologies
Description: TRANS NPN/PNP 40V 200MA PG-SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC74-6
Description: TRANS NPN/PNP 40V 200MA PG-SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC74-6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBT 3906 E6767 |
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Hersteller: Infineon Technologies
Description: TRANS PNP 40V 0.2A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 330 mW
Description: TRANS PNP 40V 0.2A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBT3906SE6327HTSA1 |
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Hersteller: Infineon Technologies
Description: TRANS 2PNP 40V 0.2A PG-SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
Description: TRANS 2PNP 40V 0.2A PG-SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBT3906UE6327HTSA1 |
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Hersteller: Infineon Technologies
Description: TRANS 2PNP 40V 200MA PG-SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC74-6
Part Status: Last Time Buy
Description: TRANS 2PNP 40V 200MA PG-SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC74-6
Part Status: Last Time Buy
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBTA06UPNE6327HTSA1 |
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Hersteller: Infineon Technologies
Description: TRANS NPN/PNP 80V 500MA PG-SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SC74-6
Part Status: Last Time Buy
Description: TRANS NPN/PNP 80V 500MA PG-SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SC74-6
Part Status: Last Time Buy
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| SMBTA42E6327HTSA1 |
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Hersteller: Infineon Technologies
Description: TRANS NPN 300V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
Description: TRANS NPN 300V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.11 EUR |
| 6000+ | 0.097 EUR |
| 9000+ | 0.092 EUR |
| 15000+ | 0.086 EUR |
| SMBTA 42 E6433 |
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Hersteller: Infineon Technologies
Description: TRANS NPN 300V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
Description: TRANS NPN 300V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
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| SMBTA 92 E6433 |
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Hersteller: Infineon Technologies
Description: TRANS PNP 300V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
Description: TRANS PNP 300V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
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| SN7002N L6327 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
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| SN7002W E6327 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 230MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 230mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 230MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 230mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
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| SP12 |
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Hersteller: Infineon Technologies
Description: IC TIRE PRESSURE SENSOR PDSO-14
Description: IC TIRE PRESSURE SENSOR PDSO-14
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| SP12T-T1 |
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Hersteller: Infineon Technologies
Description: IC TIRE PRESSURE SENSOR PDSO-14
Description: IC TIRE PRESSURE SENSOR PDSO-14
Produkt ist nicht verfügbar
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| SP12T-T7 |
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Hersteller: Infineon Technologies
Description: IC TIRE PRESSURE SENSOR PDSO-14
Description: IC TIRE PRESSURE SENSOR PDSO-14
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| SP300V21E1060XT |
Hersteller: Infineon Technologies
Description: IC TIRE PRESSURE SENSOR PDSO-14
Description: IC TIRE PRESSURE SENSOR PDSO-14
Produkt ist nicht verfügbar
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| SP300V21E106ZNT |
Hersteller: Infineon Technologies
Description: IC TIRE PRESSURE SENSOR PDSO-14
Description: IC TIRE PRESSURE SENSOR PDSO-14
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| SP300V21E1160NT |
Hersteller: Infineon Technologies
Description: IC TIRE PRESSURE SENSOR PDSO-14
Description: IC TIRE PRESSURE SENSOR PDSO-14
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| SP300V21E2060XT |
Hersteller: Infineon Technologies
Description: IC TIRE PRESSURE SENSOR PDSO-14
Description: IC TIRE PRESSURE SENSOR PDSO-14
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| SPB02N60S5ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 1.8A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 80µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Description: MOSFET N-CH 600V 1.8A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 80µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
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| SPB03N60S5ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 135µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Description: MOSFET N-CH 600V 3.2A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 135µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
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| SPB04N50C3ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 560V 4.5A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Description: MOSFET N-CH 560V 4.5A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
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| SPB04N60S5ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 4.5A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 200µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
Description: MOSFET N-CH 600V 4.5A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 200µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
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| SPB07N60S5ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 7.3A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 350µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
Description: MOSFET N-CH 600V 7.3A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 350µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
Produkt ist nicht verfügbar
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| SPB08P06P |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 8.8A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.2A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Description: MOSFET P-CH 60V 8.8A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.2A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
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| SPB08P06PGATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 8.8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.2A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 8.8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.2A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Qualification: AEC-Q101
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| SPB100N03S2-03 G |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
Description: MOSFET N-CH 30V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
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| SPB100N03S2L-03 G |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Description: MOSFET N-CH 30V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
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Im Einkaufswagen
Stück im Wert von UAH











