Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (121487) > Seite 81 nach 2025
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IPP60R125CPXKSA1 | Infineon Technologies |
 Description: MOSFET N-CH 650V 25A TO220-3Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: PG-TO220-3 Vgs(th) (Max) @ Id: 3.5V @ 1.1mA Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 2578 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP77N06S3-09 | Infineon Technologies |
Description: MOSFET N-CH 55V 77A TO-220 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPP80CN10NGHKSA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 13A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO220-3 Vgs(th) (Max) @ Id: 4V @ 12µA Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPP80N06S3-05 | Infineon Technologies |
Description: MOSFET N-CH 55V 80A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 10760 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 4V @ 110µA Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 63A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPP80N06S3-07 | Infineon Technologies |
Description: MOSFET N-CH 55V 80A TO220-3 Power Dissipation (Max): 135W (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 51A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 7768 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 4V @ 80µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPP80N06S3L-05 | Infineon Technologies |
Description: MOSFET N-CH 55V 80A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 13060 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Obsolete Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 2.2V @ 115µA Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 69A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPP80N06S3L-06 | Infineon Technologies |
Description: MOSFET N-CH 55V 80A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 9417 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Obsolete Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 2.2V @ 80µA Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 56A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPP80N06S3L-08 | Infineon Technologies |
Description: MOSFET N-CH 55V 80A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 6475 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Obsolete Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 2.2V @ 55µA Power Dissipation (Max): 105W (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 43A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPS03N03LA G | Infineon Technologies |
Description: MOSFET N-CH 25V 90A TO251-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPS03N03LB G | Infineon Technologies |
Description: MOSFET N-CH 30V 90A TO251-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPS04N03LA G | Infineon Technologies |
Description: MOSFET N-CH 25V 50A TO251-3 Input Capacitance (Ciss) (Max) @ Vds: 5199 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TO251-3-11 Vgs(th) (Max) @ Id: 2V @ 80µA Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Stub Leads, IPak Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPS04N03LB G | Infineon Technologies |
Description: MOSFET N-CH 30V 50A TO251-3 Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TO251-3-11 Vgs(th) (Max) @ Id: 2V @ 70µA Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Stub Leads, IPak Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPS06N03LA G | Infineon Technologies |
Description: MOSFET N-CH 25V 50A TO251-3 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Stub Leads, IPak Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PG-TO251-3-11 Vgs(th) (Max) @ Id: 2V @ 40µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPS06N03LZ G | Infineon Technologies |
Description: MOSFET N-CH 25V 50A TO251-3 Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TO251-3-11 Vgs(th) (Max) @ Id: 2V @ 40µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Stub Leads, IPak Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPS09N03LA G | Infineon Technologies |
Description: MOSFET N-CH 25V 50A TO251-3 Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 30A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: PG-TO251-3-11 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1642 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPS09N03LB G | Infineon Technologies |
Description: MOSFET N-CH 30V 50A TO251-3 Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PG-TO251-3-11 Vgs(th) (Max) @ Id: 2V @ 20µA Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Stub Leads, IPak Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPS10N03LA G | Infineon Technologies |
Description: MOSFET N-CH 25V 30A TO251-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPS20N03L G | Infineon Technologies |
Description: MOSFET N-CH 30V 30A TO251-3 Drain to Source Voltage (Vdss): 30 V Supplier Device Package: PG-TO251-3-11 Current - Continuous Drain (Id) @ 25°C: 30A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-251-3 Stub Leads, IPak Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPSH4N03LA G | Infineon Technologies |
Description: MOSFET N-CH 25V 90A TO251-3 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPSH5N03LA G | Infineon Technologies |
Description: MOSFET N-CH 25V 50A IPAK |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPSH6N03LA G | Infineon Technologies |
Description: MOSFET N-CH 25V 50A IPAK |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPU04N03LA | Infineon Technologies |
Description: MOSFET N-CH 25V 50A TO251-3 Input Capacitance (Ciss) (Max) @ Vds: 5199 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: P-TO251-3-1 Vgs(th) (Max) @ Id: 2V @ 80µA Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPU04N03LA G | Infineon Technologies |
Description: MOSFET N-CH 25V 50A TO251-3 Input Capacitance (Ciss) (Max) @ Vds: 5199 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: P-TO251-3-1 Vgs(th) (Max) @ Id: 2V @ 80µA Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPU04N03LB G | Infineon Technologies |
Description: MOSFET N-CH 30V 50A TO251-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: P-TO251-3-1 Vgs(th) (Max) @ Id: 2V @ 70µA Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPU05N03LA | Infineon Technologies |
Description: MOSFET N-CH 25V 50A TO251-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPU06N03LB G | Infineon Technologies |
Description: MOSFET N-CH 30V 50A TO251-3 Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TO251-3 Vgs(th) (Max) @ Id: 2V @ 40µA Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPU09N03LB G | Infineon Technologies |
Description: MOSFET N-CH 30V 50A TO251-3 Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PG-TO251-3-21 Vgs(th) (Max) @ Id: 2V @ 20µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPU10N03LA | Infineon Technologies |
Description: MOSFET N-CH 25V 30A TO251-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPU10N03LA G | Infineon Technologies |
Description: MOSFET N-CH 25V 30A TO251-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPU20N03L G | Infineon Technologies |
Description: MOSFET N-CH 30V 30A TO251-3 Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: P-TO251-3-1 Vgs(th) (Max) @ Id: 2V @ 25µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPUH6N03LA G | Infineon Technologies |
Description: MOSFET N-CH 25V 50A IPAK |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPW60R165CPFKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 21A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 790µA Supplier Device Package: PG-TO247-3-1 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW60R299CPFKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 11A TO247-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| KP125 | Infineon Technologies |
Description: IC PRESSURE SENSOR BAROM DSOF-8 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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KT110 | Infineon Technologies |
Description: SENSOR PTC 1KOHM 3% TO92MINI Resistance @ 25°C: 1 kOhms Supplier Device Package: TO-92MINI Resistance Tolerance: ±3% Operating Temperature: -50°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-226-2, TO-92-2 (TO-226AC) Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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KT130 | Infineon Technologies |
Description: IC TEMPERATURE SENSOR SOT-23 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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KTY11-5 | Infineon Technologies |
Description: SENSOR PTC 1.97KOHM 3% TO92MINI Resistance @ 25°C: 1.97 kOhms Supplier Device Package: TO-92MINI Resistance Tolerance: ±3% Operating Temperature: -50°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-226-2, TO-92-2 (TO-226AC) Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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KTY11-6 | Infineon Technologies |
Description: SENSOR PTC 2KOHM 3% TO92MINI Resistance @ 25°C: 2 kOhms Supplier Device Package: TO-92MINI Resistance Tolerance: ±3% Operating Temperature: -50°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-226-2, TO-92-2 (TO-226AC) Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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KTY11-7 | Infineon Technologies |
Description: SENSOR PTC 2.03KOHM 3% TO92MINI Resistance @ 25°C: 2.03 kOhms Supplier Device Package: TO-92MINI Resistance Tolerance: ±3% Operating Temperature: -50°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-226-2, TO-92-2 (TO-226AC) Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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kty13-6 | Infineon Technologies |
Description: SENSOR PTC 2KOHM 3% SOT23-3 Resistance @ 25°C: 2 kOhms Part Status: Obsolete Supplier Device Package: SOT-23-3 Resistance Tolerance: ±3% Operating Temperature: -50°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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KTY13-7 | Infineon Technologies |
Description: THERMISTOR PTC 2.03K OHM SOT23-3 Resistance Tolerance: ±3% Operating Temperature: -50°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Resistance @ 25°C: 2.03 kOhms Supplier Device Package: SOT-23-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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KTY23-6 | Infineon Technologies |
Description: SENSOR PTC 1KOHM 3% SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Resistance @ 25°C: 1 kOhms Supplier Device Package: SOT-23-3 Resistance Tolerance: ±3% Operating Temperature: -50°C ~ 150°C Mounting Type: Surface Mount |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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KTY23-7 | Infineon Technologies |
Description: THERMISTOR PTC 1.015K OHM SOT23 Operating Temperature: -50°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Resistance @ 25°C: 1.015 kOhms Supplier Device Package: SOT-23-3 Resistance Tolerance: ±3% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MMBD914LT3HTMA1 | Infineon Technologies |
Description: DIODE GEN PURP 100V 250MA SOT23 Current - Reverse Leakage @ Vr: 100 nA @ 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PG-SOT23 Current - Average Rectified (Io): 250mA Capacitance @ Vr, F: 2pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MMBT3904LT3XT | Infineon Technologies |
Description: TRANS NPN 40V 0.2A PG-SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: PG-SOT23 Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 330 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MMBTA14LT1HTSA1 | Infineon Technologies |
Description: TRANS NPN DARL 30V 0.3A PG-SOT23 Power - Max: 330 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 300 mA Part Status: Not For New Designs Supplier Device Package: PG-SOT23 Frequency - Transition: 125MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MMBTA42LT1HTSA1 | Infineon Technologies |
Description: TRANS NPN 300V 0.5A PG-SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Frequency - Transition: 70MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 360 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 24000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MMBTA56LT1HTSA1 | Infineon Technologies |
Description: TRANS PNP 80V 0.5A PG-SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 330 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 36000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| PBL38620/2QNA | Infineon Technologies |
Description: IC TELECOM INTERFACE PLCC-28 Packaging: Tape & Reel (TR) Package / Case: 28-LCC (J-Lead) Mounting Type: Surface Mount Function: Subscriber Line Interface Concept (SLIC) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 5V Current - Supply: 2.8mA Supplier Device Package: P/PG-LCC-28-3 Part Status: Discontinued at Digi-Key Number of Circuits: 1 Power (Watts): 290 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| PBL38621/2QNA | Infineon Technologies |
Description: IC TELECOM INTERFACE PLCC-28 Packaging: Tape & Reel (TR) Package / Case: 28-LCC (J-Lead) Mounting Type: Surface Mount Function: Subscriber Line Interface Concept (SLIC) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 5V Current - Supply: 2.8mA Supplier Device Package: P/PG-LCC-28-3 Part Status: Obsolete Number of Circuits: 1 Power (Watts): 290 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| PBL38621/2QNS | Infineon Technologies |
Description: IC TELECOM INTERFACE PLCC-28 Packaging: Bulk Package / Case: 28-LCC (J-Lead) Mounting Type: Surface Mount Function: Subscriber Line Interface Concept (SLIC) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 5V Current - Supply: 2.8mA Supplier Device Package: P/PG-LCC-28-3 Part Status: Discontinued at Digi-Key Number of Circuits: 1 Power (Watts): 290 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3040 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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PBL38621/2SHA | Infineon Technologies |
Description: IC TELECOM INTERFACE 24-SSOP Power (Watts): 290 mW Number of Circuits: 1 Supplier Device Package: PG-SSOP-24-1 Current - Supply: 2.8mA Voltage - Supply: 5V Operating Temperature: -40°C ~ 85°C Function: Subscriber Line Interface Concept (SLIC) Mounting Type: Surface Mount Package / Case: 24-SSOP (0.209", 5.30mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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PBL38621/2SOA | Infineon Technologies |
Description: IC TELECOM INTERFACE PDSO-24 Power (Watts): 290 mW Number of Circuits: 1 Supplier Device Package: PG-DSO-24-8 Current - Supply: 2.8mA Voltage - Supply: 5V Operating Temperature: -40°C ~ 85°C Function: Subscriber Line Interface Concept (SLIC) Mounting Type: Surface Mount Package / Case: 24-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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PBL38621/2SOT | Infineon Technologies |
Description: IC TELECOM INTERFACE PDSO-24 Packaging: Tape & Reel (TR) Package / Case: 24-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Function: Subscriber Line Interface Concept (SLIC) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 5V Current - Supply: 2.8mA Supplier Device Package: PG-DSO-24-8 Number of Circuits: 1 Power (Watts): 290 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| PBL38630/2QNA | Infineon Technologies |
Description: IC TELECOM INTERFACE PLCC-28 Power (Watts): 730 mW Number of Circuits: 1 Part Status: Discontinued at Digi-Key Supplier Device Package: P/PG-LCC-28-3 Current - Supply: 2.8mA Voltage - Supply: 5V Operating Temperature: -40°C ~ 85°C Function: Subscriber Line Interface Concept (SLIC) Mounting Type: Surface Mount Package / Case: 28-LCC (J-Lead) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| PBL38630/2QNT | Infineon Technologies |
Description: IC TELECOM INTERFACE PLCC-28 Packaging: Tape & Reel (TR) Package / Case: 28-LCC (J-Lead) Mounting Type: Surface Mount Function: Subscriber Line Interface Concept (SLIC) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 5V Current - Supply: 2.8mA Supplier Device Package: P/PG-LCC-28-3 Part Status: Discontinued at Digi-Key Number of Circuits: 1 Power (Watts): 730 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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PBL38630/2SOA | Infineon Technologies |
Description: IC TELECOM INTERFACE PDSO-24 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| PBL38640/2QNA | Infineon Technologies |
Description: IC TELECOM INTERFACE PLCC-28 Packaging: Tape & Reel (TR) Package / Case: 28-LCC (J-Lead) Mounting Type: Surface Mount Function: Subscriber Line Interface Concept (SLIC) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 5V Current - Supply: 2.8mA Supplier Device Package: P/PG-LCC-28-3 Part Status: Obsolete Number of Circuits: 1 Power (Watts): 730 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| PBL38640/2QNT | Infineon Technologies |
Description: IC TELECOM INTERFACE PLCC-28 Power (Watts): 730 mW Number of Circuits: 1 Part Status: Discontinued at Digi-Key Supplier Device Package: P/PG-LCC-28-3 Current - Supply: 2.8mA Voltage - Supply: 5V Operating Temperature: -40°C ~ 85°C Function: Subscriber Line Interface Concept (SLIC) Mounting Type: Surface Mount Package / Case: 28-LCC (J-Lead) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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PBL38640/2SOT | Infineon Technologies |
Description: IC TELECOM INTERFACE PDSO-24 Power (Watts): 730 mW Number of Circuits: 1 Supplier Device Package: PG-DSO-24-8 Current - Supply: 2.8mA Voltage - Supply: 5V Operating Temperature: -40°C ~ 85°C Function: Subscriber Line Interface Concept (SLIC) Mounting Type: Surface Mount Package / Case: 24-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1250 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPP60R125CPXKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 25A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 650V 25A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 2578 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.69 EUR |
| 50+ | 4.59 EUR |
| 100+ | 4.19 EUR |
| 500+ | 3.5 EUR |
| 1000+ | 3.48 EUR |
| IPP77N06S3-09 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 77A TO-220
Description: MOSFET N-CH 55V 77A TO-220
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPP80CN10NGHKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 13A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 12µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 100V 13A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 12µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPP80N06S3-05 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 10760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 110µA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 63A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 55V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 10760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 110µA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 63A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPP80N06S3-07 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Power Dissipation (Max): 135W (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 51A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7768 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 80µA
Description: MOSFET N-CH 55V 80A TO220-3
Power Dissipation (Max): 135W (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 51A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7768 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 80µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPP80N06S3L-05 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 13060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2.2V @ 115µA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 69A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 55V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 13060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2.2V @ 115µA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 69A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPP80N06S3L-06 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 9417 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2.2V @ 80µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 56A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 55V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 9417 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2.2V @ 80µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 56A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPP80N06S3L-08 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 6475 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2.2V @ 55µA
Power Dissipation (Max): 105W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 55V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 6475 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2.2V @ 55µA
Power Dissipation (Max): 105W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPS03N03LA G |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 90A TO251-3
Description: MOSFET N-CH 25V 90A TO251-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPS03N03LB G |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 90A TO251-3
Description: MOSFET N-CH 30V 90A TO251-3
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| IPS04N03LA G |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 5199 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO251-3-11
Vgs(th) (Max) @ Id: 2V @ 80µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Description: MOSFET N-CH 25V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 5199 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO251-3-11
Vgs(th) (Max) @ Id: 2V @ 80µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPS04N03LB G |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO251-3-11
Vgs(th) (Max) @ Id: 2V @ 70µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Description: MOSFET N-CH 30V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO251-3-11
Vgs(th) (Max) @ Id: 2V @ 70µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPS06N03LA G |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO251-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO251-3-11
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 25V 50A TO251-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO251-3-11
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
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Stück im Wert von UAH
| IPS06N03LZ G |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO251-3-11
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Description: MOSFET N-CH 25V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO251-3-11
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPS09N03LA G |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 30A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1642 pF @ 15 V
Description: MOSFET N-CH 25V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 30A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1642 pF @ 15 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| IPS09N03LB G |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO251-3-11
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Description: MOSFET N-CH 30V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO251-3-11
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPS10N03LA G |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 30A TO251-3
Description: MOSFET N-CH 25V 30A TO251-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPS20N03L G |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO251-3
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: PG-TO251-3-11
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Description: MOSFET N-CH 30V 30A TO251-3
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: PG-TO251-3-11
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPSH4N03LA G |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 90A TO251-3
Description: MOSFET N-CH 25V 90A TO251-3
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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Stück im Wert von UAH
| IPSH5N03LA G |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A IPAK
Description: MOSFET N-CH 25V 50A IPAK
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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Stück im Wert von UAH
| IPSH6N03LA G |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A IPAK
Description: MOSFET N-CH 25V 50A IPAK
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPU04N03LA |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 5199 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: P-TO251-3-1
Vgs(th) (Max) @ Id: 2V @ 80µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 25V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 5199 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: P-TO251-3-1
Vgs(th) (Max) @ Id: 2V @ 80µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPU04N03LA G |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 5199 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: P-TO251-3-1
Vgs(th) (Max) @ Id: 2V @ 80µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 25V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 5199 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: P-TO251-3-1
Vgs(th) (Max) @ Id: 2V @ 80µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPU04N03LB G |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO251-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: P-TO251-3-1
Vgs(th) (Max) @ Id: 2V @ 70µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Description: MOSFET N-CH 30V 50A TO251-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: P-TO251-3-1
Vgs(th) (Max) @ Id: 2V @ 70µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPU05N03LA |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO251-3
Description: MOSFET N-CH 25V 50A TO251-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPU06N03LB G |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 30V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPU09N03LB G |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO251-3
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO251-3-21
Vgs(th) (Max) @ Id: 2V @ 20µA
Description: MOSFET N-CH 30V 50A TO251-3
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO251-3-21
Vgs(th) (Max) @ Id: 2V @ 20µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPU10N03LA |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 30A TO251-3
Description: MOSFET N-CH 25V 30A TO251-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPU10N03LA G |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 30A TO251-3
Description: MOSFET N-CH 25V 30A TO251-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPU20N03L G |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: P-TO251-3-1
Vgs(th) (Max) @ Id: 2V @ 25µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 30V 30A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: P-TO251-3-1
Vgs(th) (Max) @ Id: 2V @ 25µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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| IPUH6N03LA G |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A IPAK
Description: MOSFET N-CH 25V 50A IPAK
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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| IPW60R165CPFKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 21A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
Description: MOSFET N-CH 600V 21A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.68 EUR |
| 30+ | 4.89 EUR |
| IPW60R299CPFKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 11A TO247-3
Description: MOSFET N-CH 600V 11A TO247-3
Produkt ist nicht verfügbar
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| KP125 |
|
Hersteller: Infineon Technologies
Description: IC PRESSURE SENSOR BAROM DSOF-8
Description: IC PRESSURE SENSOR BAROM DSOF-8
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| KT110 |
|
Hersteller: Infineon Technologies
Description: SENSOR PTC 1KOHM 3% TO92MINI
Resistance @ 25°C: 1 kOhms
Supplier Device Package: TO-92MINI
Resistance Tolerance: ±3%
Operating Temperature: -50°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Packaging: Bulk
Description: SENSOR PTC 1KOHM 3% TO92MINI
Resistance @ 25°C: 1 kOhms
Supplier Device Package: TO-92MINI
Resistance Tolerance: ±3%
Operating Temperature: -50°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Packaging: Bulk
Produkt ist nicht verfügbar
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| KT130 |
|
Hersteller: Infineon Technologies
Description: IC TEMPERATURE SENSOR SOT-23
Description: IC TEMPERATURE SENSOR SOT-23
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| KTY11-5 |
|
Hersteller: Infineon Technologies
Description: SENSOR PTC 1.97KOHM 3% TO92MINI
Resistance @ 25°C: 1.97 kOhms
Supplier Device Package: TO-92MINI
Resistance Tolerance: ±3%
Operating Temperature: -50°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Packaging: Bulk
Description: SENSOR PTC 1.97KOHM 3% TO92MINI
Resistance @ 25°C: 1.97 kOhms
Supplier Device Package: TO-92MINI
Resistance Tolerance: ±3%
Operating Temperature: -50°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Packaging: Bulk
Produkt ist nicht verfügbar
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| KTY11-6 |
|
Hersteller: Infineon Technologies
Description: SENSOR PTC 2KOHM 3% TO92MINI
Resistance @ 25°C: 2 kOhms
Supplier Device Package: TO-92MINI
Resistance Tolerance: ±3%
Operating Temperature: -50°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Packaging: Bulk
Description: SENSOR PTC 2KOHM 3% TO92MINI
Resistance @ 25°C: 2 kOhms
Supplier Device Package: TO-92MINI
Resistance Tolerance: ±3%
Operating Temperature: -50°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Packaging: Bulk
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| KTY11-7 |
|
Hersteller: Infineon Technologies
Description: SENSOR PTC 2.03KOHM 3% TO92MINI
Resistance @ 25°C: 2.03 kOhms
Supplier Device Package: TO-92MINI
Resistance Tolerance: ±3%
Operating Temperature: -50°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Packaging: Bulk
Description: SENSOR PTC 2.03KOHM 3% TO92MINI
Resistance @ 25°C: 2.03 kOhms
Supplier Device Package: TO-92MINI
Resistance Tolerance: ±3%
Operating Temperature: -50°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Packaging: Bulk
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| kty13-6 |
|
Hersteller: Infineon Technologies
Description: SENSOR PTC 2KOHM 3% SOT23-3
Resistance @ 25°C: 2 kOhms
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Resistance Tolerance: ±3%
Operating Temperature: -50°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: SENSOR PTC 2KOHM 3% SOT23-3
Resistance @ 25°C: 2 kOhms
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Resistance Tolerance: ±3%
Operating Temperature: -50°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| KTY13-7 |
|
Hersteller: Infineon Technologies
Description: THERMISTOR PTC 2.03K OHM SOT23-3
Resistance Tolerance: ±3%
Operating Temperature: -50°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Resistance @ 25°C: 2.03 kOhms
Supplier Device Package: SOT-23-3
Description: THERMISTOR PTC 2.03K OHM SOT23-3
Resistance Tolerance: ±3%
Operating Temperature: -50°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Resistance @ 25°C: 2.03 kOhms
Supplier Device Package: SOT-23-3
Produkt ist nicht verfügbar
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| KTY23-6 |
|
Hersteller: Infineon Technologies
Description: SENSOR PTC 1KOHM 3% SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Resistance @ 25°C: 1 kOhms
Supplier Device Package: SOT-23-3
Resistance Tolerance: ±3%
Operating Temperature: -50°C ~ 150°C
Mounting Type: Surface Mount
Description: SENSOR PTC 1KOHM 3% SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Resistance @ 25°C: 1 kOhms
Supplier Device Package: SOT-23-3
Resistance Tolerance: ±3%
Operating Temperature: -50°C ~ 150°C
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| KTY23-7 |
|
Hersteller: Infineon Technologies
Description: THERMISTOR PTC 1.015K OHM SOT23
Operating Temperature: -50°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Resistance @ 25°C: 1.015 kOhms
Supplier Device Package: SOT-23-3
Resistance Tolerance: ±3%
Description: THERMISTOR PTC 1.015K OHM SOT23
Operating Temperature: -50°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Resistance @ 25°C: 1.015 kOhms
Supplier Device Package: SOT-23-3
Resistance Tolerance: ±3%
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MMBD914LT3HTMA1 |
|
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 100V 250MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 100V 250MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBT3904LT3XT |
|
Hersteller: Infineon Technologies
Description: TRANS NPN 40V 0.2A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: PG-SOT23
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 330 mW
Description: TRANS NPN 40V 0.2A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: PG-SOT23
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 50000 Stücke
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Stück im Wert von UAH
| MMBTA14LT1HTSA1 |
|
Hersteller: Infineon Technologies
Description: TRANS NPN DARL 30V 0.3A PG-SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Not For New Designs
Supplier Device Package: PG-SOT23
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS NPN DARL 30V 0.3A PG-SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Not For New Designs
Supplier Device Package: PG-SOT23
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBTA42LT1HTSA1 |
|
Hersteller: Infineon Technologies
Description: TRANS NPN 300V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
Description: TRANS NPN 300V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 24000 Stücke
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| MMBTA56LT1HTSA1 |
|
Hersteller: Infineon Technologies
Description: TRANS PNP 80V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 330 mW
Description: TRANS PNP 80V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 36000 Stücke
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| PBL38620/2QNA |
|
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE PLCC-28
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Part Status: Discontinued at Digi-Key
Number of Circuits: 1
Power (Watts): 290 mW
Description: IC TELECOM INTERFACE PLCC-28
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Part Status: Discontinued at Digi-Key
Number of Circuits: 1
Power (Watts): 290 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 750 Stücke
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Stück im Wert von UAH
| PBL38621/2QNA |
|
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE PLCC-28
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Part Status: Obsolete
Number of Circuits: 1
Power (Watts): 290 mW
Description: IC TELECOM INTERFACE PLCC-28
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Part Status: Obsolete
Number of Circuits: 1
Power (Watts): 290 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 750 Stücke
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| PBL38621/2QNS |
|
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE PLCC-28
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Part Status: Discontinued at Digi-Key
Number of Circuits: 1
Power (Watts): 290 mW
Description: IC TELECOM INTERFACE PLCC-28
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Part Status: Discontinued at Digi-Key
Number of Circuits: 1
Power (Watts): 290 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 3040 Stücke
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| PBL38621/2SHA |
|
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE 24-SSOP
Power (Watts): 290 mW
Number of Circuits: 1
Supplier Device Package: PG-SSOP-24-1
Current - Supply: 2.8mA
Voltage - Supply: 5V
Operating Temperature: -40°C ~ 85°C
Function: Subscriber Line Interface Concept (SLIC)
Mounting Type: Surface Mount
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Description: IC TELECOM INTERFACE 24-SSOP
Power (Watts): 290 mW
Number of Circuits: 1
Supplier Device Package: PG-SSOP-24-1
Current - Supply: 2.8mA
Voltage - Supply: 5V
Operating Temperature: -40°C ~ 85°C
Function: Subscriber Line Interface Concept (SLIC)
Mounting Type: Surface Mount
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| PBL38621/2SOA |
|
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE PDSO-24
Power (Watts): 290 mW
Number of Circuits: 1
Supplier Device Package: PG-DSO-24-8
Current - Supply: 2.8mA
Voltage - Supply: 5V
Operating Temperature: -40°C ~ 85°C
Function: Subscriber Line Interface Concept (SLIC)
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Description: IC TELECOM INTERFACE PDSO-24
Power (Watts): 290 mW
Number of Circuits: 1
Supplier Device Package: PG-DSO-24-8
Current - Supply: 2.8mA
Voltage - Supply: 5V
Operating Temperature: -40°C ~ 85°C
Function: Subscriber Line Interface Concept (SLIC)
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| PBL38621/2SOT |
|
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE PDSO-24
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-DSO-24-8
Number of Circuits: 1
Power (Watts): 290 mW
Description: IC TELECOM INTERFACE PDSO-24
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-DSO-24-8
Number of Circuits: 1
Power (Watts): 290 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 1250 Stücke
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| PBL38630/2QNA |
|
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE PLCC-28
Power (Watts): 730 mW
Number of Circuits: 1
Part Status: Discontinued at Digi-Key
Supplier Device Package: P/PG-LCC-28-3
Current - Supply: 2.8mA
Voltage - Supply: 5V
Operating Temperature: -40°C ~ 85°C
Function: Subscriber Line Interface Concept (SLIC)
Mounting Type: Surface Mount
Package / Case: 28-LCC (J-Lead)
Packaging: Tape & Reel (TR)
Description: IC TELECOM INTERFACE PLCC-28
Power (Watts): 730 mW
Number of Circuits: 1
Part Status: Discontinued at Digi-Key
Supplier Device Package: P/PG-LCC-28-3
Current - Supply: 2.8mA
Voltage - Supply: 5V
Operating Temperature: -40°C ~ 85°C
Function: Subscriber Line Interface Concept (SLIC)
Mounting Type: Surface Mount
Package / Case: 28-LCC (J-Lead)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PBL38630/2QNT |
|
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE PLCC-28
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Part Status: Discontinued at Digi-Key
Number of Circuits: 1
Power (Watts): 730 mW
Description: IC TELECOM INTERFACE PLCC-28
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Part Status: Discontinued at Digi-Key
Number of Circuits: 1
Power (Watts): 730 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 750 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PBL38630/2SOA |
|
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE PDSO-24
Description: IC TELECOM INTERFACE PDSO-24
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PBL38640/2QNA |
|
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE PLCC-28
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Part Status: Obsolete
Number of Circuits: 1
Power (Watts): 730 mW
Description: IC TELECOM INTERFACE PLCC-28
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Part Status: Obsolete
Number of Circuits: 1
Power (Watts): 730 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 750 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PBL38640/2QNT |
|
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE PLCC-28
Power (Watts): 730 mW
Number of Circuits: 1
Part Status: Discontinued at Digi-Key
Supplier Device Package: P/PG-LCC-28-3
Current - Supply: 2.8mA
Voltage - Supply: 5V
Operating Temperature: -40°C ~ 85°C
Function: Subscriber Line Interface Concept (SLIC)
Mounting Type: Surface Mount
Package / Case: 28-LCC (J-Lead)
Packaging: Tape & Reel (TR)
Description: IC TELECOM INTERFACE PLCC-28
Power (Watts): 730 mW
Number of Circuits: 1
Part Status: Discontinued at Digi-Key
Supplier Device Package: P/PG-LCC-28-3
Current - Supply: 2.8mA
Voltage - Supply: 5V
Operating Temperature: -40°C ~ 85°C
Function: Subscriber Line Interface Concept (SLIC)
Mounting Type: Surface Mount
Package / Case: 28-LCC (J-Lead)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PBL38640/2SOT |
|
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE PDSO-24
Power (Watts): 730 mW
Number of Circuits: 1
Supplier Device Package: PG-DSO-24-8
Current - Supply: 2.8mA
Voltage - Supply: 5V
Operating Temperature: -40°C ~ 85°C
Function: Subscriber Line Interface Concept (SLIC)
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Description: IC TELECOM INTERFACE PDSO-24
Power (Watts): 730 mW
Number of Circuits: 1
Supplier Device Package: PG-DSO-24-8
Current - Supply: 2.8mA
Voltage - Supply: 5V
Operating Temperature: -40°C ~ 85°C
Function: Subscriber Line Interface Concept (SLIC)
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1250 Stücke
Im Einkaufswagen
Stück im Wert von UAH