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IPP80N06S3L-06 IPP80N06S3L-06 Infineon Technologies IPB(I,P)80N06S3L-06.pdf Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 56A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 80µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9417 pF @ 25 V
Produkt ist nicht verfügbar
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IPP80N06S3L-08 IPP80N06S3L-08 Infineon Technologies IPB(I,P)80N06S3L-08.pdf Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 43A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 55µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6475 pF @ 25 V
Produkt ist nicht verfügbar
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IPS03N03LA G IPS03N03LA G Infineon Technologies IPD03N03LAG_Rev1.3.pdf Description: MOSFET N-CH 25V 90A TO251-3
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IPS03N03LB G IPS03N03LB G Infineon Technologies IP(D,S)03N03LB_G.pdf Description: MOSFET N-CH 30V 90A TO251-3
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IPS04N03LA G IPS04N03LA G Infineon Technologies IP%28D%2CF%2CS%2CU%2904N03LA_G.pdf Description: MOSFET N-CH 25V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5199 pF @ 15 V
Produkt ist nicht verfügbar
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IPS04N03LB G IPS04N03LB G Infineon Technologies IP(D,F,S,U)04N03LB_G.pdf Description: MOSFET N-CH 30V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
Produkt ist nicht verfügbar
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IPS06N03LA G IPS06N03LA G Infineon Technologies IP%28D%2CF%2CS%2CU%2906N03LA_G.pdf Description: MOSFET N-CH 25V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V
Produkt ist nicht verfügbar
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IPS06N03LZ G IPS06N03LZ G Infineon Technologies IPD_S_U06N03LZ_G.pdf Description: MOSFET N-CH 25V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V
Produkt ist nicht verfügbar
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IPS09N03LA G IPS09N03LA G Infineon Technologies IP%28D%2CF%2CS%2CU%2909N03LA_G.pdf Description: MOSFET N-CH 25V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 30A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1642 pF @ 15 V
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IPS09N03LB G IPS09N03LB G Infineon Technologies ipd09n03lb_v1.54_g.pdf Description: MOSFET N-CH 30V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
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IPS10N03LA G IPS10N03LA G Infineon Technologies ipd10n03la_rev1.7_g.pdf Description: MOSFET N-CH 25V 30A TO251-3
Produkt ist nicht verfügbar
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IPS20N03L G IPS20N03L G Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 30V 30A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Supplier Device Package: PG-TO251-3-11
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar
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IPSH4N03LA G IPSH4N03LA G Infineon Technologies IP(D,S)H4N03LA_G.pdf Description: MOSFET N-CH 25V 90A TO251-3
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IPSH5N03LA G IPSH5N03LA G Infineon Technologies IPDH5N03LA_Rev1.4_G.pdf Description: MOSFET N-CH 25V 50A IPAK
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IPSH6N03LA G IPSH6N03LA G Infineon Technologies IPDH6N03LAG_Rev1.4.pdf Description: MOSFET N-CH 25V 50A IPAK
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IPU04N03LA IPU04N03LA Infineon Technologies IP(D,F,S,U)04N03LA_G.pdf Description: MOSFET N-CH 25V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: P-TO251-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5199 pF @ 15 V
Produkt ist nicht verfügbar
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IPU04N03LA G IPU04N03LA G Infineon Technologies IP(D,F,S,U)04N03LA_G.pdf Description: MOSFET N-CH 25V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: P-TO251-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5199 pF @ 15 V
Produkt ist nicht verfügbar
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IPU04N03LB G IPU04N03LB G Infineon Technologies IP(D,F,S,U)04N03LB_G.pdf Description: MOSFET N-CH 30V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: P-TO251-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
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IPU05N03LA IPU05N03LA Infineon Technologies IP(D,F,S,U)05N03LA_G.pdf Description: MOSFET N-CH 25V 50A TO251-3
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IPU06N03LB G IPU06N03LB G Infineon Technologies IPU06N03LB%2C%20IPS06N03LB.pdf Description: MOSFET N-CH 30V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
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IPU09N03LB G IPU09N03LB G Infineon Technologies ipd09n03lb_v1.54_g.pdf Description: MOSFET N-CH 30V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO251-3-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
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IPU10N03LA IPU10N03LA Infineon Technologies ipd10n03la_rev1.7_g.pdf Description: MOSFET N-CH 25V 30A TO251-3
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IPU10N03LA G IPU10N03LA G Infineon Technologies ipd10n03la_rev1.7_g.pdf Description: MOSFET N-CH 25V 30A TO251-3
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IPU20N03L G IPU20N03L G Infineon Technologies ipd_u_20n03l.pdf Description: MOSFET N-CH 30V 30A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: P-TO251-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
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IPUH6N03LA G IPUH6N03LA G Infineon Technologies IPDH6N03LAG_Rev1.4.pdf Description: MOSFET N-CH 25V 50A IPAK
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IPW60R165CPFKSA1 IPW60R165CPFKSA1 Infineon Technologies IPW60R165CP_rev2.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d915e489f Description: MOSFET N-CH 600V 21A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
auf Bestellung 232 Stücke:
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3+7.99 EUR
30+4.5 EUR
120+3.73 EUR
Mindestbestellmenge: 3
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IPW60R299CPFKSA1 IPW60R299CPFKSA1 Infineon Technologies IPW60R299CP_rev2.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c74ff4703 Description: MOSFET N-CH 600V 11A TO247-3
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KP125 Infineon Technologies KP125_V1+0_DS_Rev2+14.pdf Description: IC PRESSURE SENSOR BAROM DSOF-8
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KT110 KT110 Infineon Technologies KT%2CKTY.pdf Description: SENSOR PTC 1KOHM 3% TO92MINI
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: TO-92MINI
Resistance @ 25°C: 1 kOhms
Produkt ist nicht verfügbar
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KT130 KT130 Infineon Technologies KT,KTY.pdf Description: IC TEMPERATURE SENSOR SOT-23
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KTY11-5 KTY11-5 Infineon Technologies KT%2CKTY.pdf Description: SENSOR PTC 1.97KOHM 3% TO92MINI
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: TO-92MINI
Resistance @ 25°C: 1.97 kOhms
Produkt ist nicht verfügbar
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KTY11-6 KTY11-6 Infineon Technologies KT%2CKTY.pdf Description: SENSOR PTC 2KOHM 3% TO92MINI
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: TO-92MINI
Resistance @ 25°C: 2 kOhms
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KTY11-7 KTY11-7 Infineon Technologies KT%2CKTY.pdf Description: SENSOR PTC 2.03KOHM 3% TO92MINI
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: TO-92MINI
Resistance @ 25°C: 2.03 kOhms
Produkt ist nicht verfügbar
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kty13-6 kty13-6 Infineon Technologies KT%2CKTY.pdf Description: SENSOR PTC 2KOHM 3% SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Resistance @ 25°C: 2 kOhms
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KTY13-7 KTY13-7 Infineon Technologies KT%2CKTY.pdf Description: THERMISTOR PTC 2.03K OHM SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: SOT-23-3
Resistance @ 25°C: 2.03 kOhms
Produkt ist nicht verfügbar
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KTY23-6 KTY23-6 Infineon Technologies KT%2CKTY.pdf Description: SENSOR PTC 1KOHM 3% SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: SOT-23-3
Resistance @ 25°C: 1 kOhms
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KTY23-7 KTY23-7 Infineon Technologies KT,KTY.pdf Description: THERMISTOR PTC 1.015K OHM SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: SOT-23-3
Resistance @ 25°C: 1.015 kOhms
Produkt ist nicht verfügbar
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MMBD914LT3HTMA1 MMBD914LT3HTMA1 Infineon Technologies MMBD%2CSMBD914.pdf Description: DIODE GEN PURP 100V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
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MMBT3904LT3XT MMBT3904LT3XT Infineon Technologies smbt3904series_mmbt3904.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d0114460005c10191 Description: TRANS NPN 40V 0.2A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: PG-SOT23
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 330 mW
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MMBTA14LT1HTSA1 MMBTA14LT1HTSA1 Infineon Technologies smbta14_mmbta14.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445ef0201018c Description: TRANS NPN DARL 30V 0.3A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT23
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
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MMBTA42LT1HTSA1 MMBTA42LT1HTSA1 Infineon Technologies smbta42_mmbta42.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449bfc5760237 Description: TRANS NPN 300V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
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MMBTA56LT1HTSA1 MMBTA56LT1HTSA1 Infineon Technologies smbta56_mmbta56.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca38901155fad71671d8c Description: TRANS PNP 80V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 330 mW
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PBL38620/2QNA Infineon Technologies PBL38620%2C2%20v2.pdf Description: IC TELECOM INTERFACE PLCC-28
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Part Status: Discontinued at Digi-Key
Number of Circuits: 1
Power (Watts): 290 mW
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PBL38621/2QNA Infineon Technologies fundamentals-of-power-semiconductors Description: IC TELECOM INTERFACE PLCC-28
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Part Status: Obsolete
Number of Circuits: 1
Power (Watts): 290 mW
Produkt ist nicht verfügbar
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PBL38621/2QNS Infineon Technologies fundamentals-of-power-semiconductors Description: IC TELECOM INTERFACE PLCC-28
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Part Status: Discontinued at Digi-Key
Number of Circuits: 1
Power (Watts): 290 mW
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PBL38621/2SHA PBL38621/2SHA Infineon Technologies fundamentals-of-power-semiconductors Description: IC TELECOM INTERFACE 24-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-SSOP-24-1
Number of Circuits: 1
Power (Watts): 290 mW
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PBL38621/2SOA PBL38621/2SOA Infineon Technologies Part_Number_Guide_Web.pdf Description: IC TELECOM INTERFACE PDSO-24
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-DSO-24-8
Number of Circuits: 1
Power (Watts): 290 mW
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PBL38621/2SOT PBL38621/2SOT Infineon Technologies Part_Number_Guide_Web.pdf Description: IC TELECOM INTERFACE PDSO-24
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-DSO-24-8
Number of Circuits: 1
Power (Watts): 290 mW
Produkt ist nicht verfügbar
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PBL38630/2QNA Infineon Technologies PBL38630_2.pdf Description: IC TELECOM INTERFACE PLCC-28
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Part Status: Discontinued at Digi-Key
Number of Circuits: 1
Power (Watts): 730 mW
Produkt ist nicht verfügbar
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PBL38630/2QNT Infineon Technologies PBL38630_2.pdf Description: IC TELECOM INTERFACE PLCC-28
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Part Status: Discontinued at Digi-Key
Number of Circuits: 1
Power (Watts): 730 mW
Produkt ist nicht verfügbar
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PBL38630/2SOA PBL38630/2SOA Infineon Technologies PBL38630_2.pdf Description: IC TELECOM INTERFACE PDSO-24
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PBL38640/2QNA Infineon Technologies PBL38640%2C2.pdf Description: IC TELECOM INTERFACE PLCC-28
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Part Status: Obsolete
Number of Circuits: 1
Power (Watts): 730 mW
Produkt ist nicht verfügbar
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PBL38640/2QNT Infineon Technologies PBL38640,2.pdf Description: IC TELECOM INTERFACE PLCC-28
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Part Status: Discontinued at Digi-Key
Number of Circuits: 1
Power (Watts): 730 mW
Produkt ist nicht verfügbar
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PBL38640/2SOT PBL38640/2SOT Infineon Technologies PBL38640%2C2.pdf Description: IC TELECOM INTERFACE PDSO-24
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-DSO-24-8
Number of Circuits: 1
Power (Watts): 730 mW
Produkt ist nicht verfügbar
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PBL38650/2QNA Infineon Technologies PBL38650%2C2.pdf Description: IC TELECOM INTERFACE PLCC-28
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Part Status: Discontinued at Digi-Key
Number of Circuits: 1
Power (Watts): 730 mW
Produkt ist nicht verfügbar
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PBL38650/2QNS Infineon Technologies PBL38650,2.pdf Description: IC TELECOM INTERFACE PLCC-28
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Part Status: Discontinued at Digi-Key
Number of Circuits: 1
Power (Watts): 730 mW
Produkt ist nicht verfügbar
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PBL38650/2QNT Infineon Technologies PBL38650%2C2.pdf Description: IC TELECOM INTERFACE PLCC-28
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Part Status: Discontinued at Digi-Key
Number of Circuits: 1
Power (Watts): 730 mW
Produkt ist nicht verfügbar
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PEB 20256 E V2.1 PEB 20256 E V2.1 Infineon Technologies PEB20256M%20E.pdf Description: IC NETWORK CONTROLLER BGA-388-2
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PEB 20256 E V2.2 PEB 20256 E V2.2 Infineon Technologies PEB20256_E.pdf Description: IC NETWORK CONTROLLER BGA-388-2
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PEB 2026 T-P V1.1 PEB 2026 T-P V1.1 Infineon Technologies Description: IC INTEG PWR CONTROLLER 20DSO
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IPP80N06S3L-06 IPB(I,P)80N06S3L-06.pdf
IPP80N06S3L-06
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 56A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 80µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9417 pF @ 25 V
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IPP80N06S3L-08 IPB(I,P)80N06S3L-08.pdf
IPP80N06S3L-08
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 43A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 55µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6475 pF @ 25 V
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IPS03N03LA G IPD03N03LAG_Rev1.3.pdf
IPS03N03LA G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 90A TO251-3
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IPS03N03LB G IP(D,S)03N03LB_G.pdf
IPS03N03LB G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 90A TO251-3
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IPS04N03LA G IP%28D%2CF%2CS%2CU%2904N03LA_G.pdf
IPS04N03LA G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5199 pF @ 15 V
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IPS04N03LB G IP(D,F,S,U)04N03LB_G.pdf
IPS04N03LB G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
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IPS06N03LA G IP%28D%2CF%2CS%2CU%2906N03LA_G.pdf
IPS06N03LA G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V
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IPS06N03LZ G IPD_S_U06N03LZ_G.pdf
IPS06N03LZ G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V
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IPS09N03LA G IP%28D%2CF%2CS%2CU%2909N03LA_G.pdf
IPS09N03LA G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 30A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1642 pF @ 15 V
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IPS09N03LB G ipd09n03lb_v1.54_g.pdf
IPS09N03LB G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
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IPS10N03LA G ipd10n03la_rev1.7_g.pdf
IPS10N03LA G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 30A TO251-3
Produkt ist nicht verfügbar
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IPS20N03L G fundamentals-of-power-semiconductors
IPS20N03L G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Supplier Device Package: PG-TO251-3-11
Drain to Source Voltage (Vdss): 30 V
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IPSH4N03LA G IP(D,S)H4N03LA_G.pdf
IPSH4N03LA G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 90A TO251-3
Produkt ist nicht verfügbar
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IPSH5N03LA G IPDH5N03LA_Rev1.4_G.pdf
IPSH5N03LA G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A IPAK
Produkt ist nicht verfügbar
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IPSH6N03LA G IPDH6N03LAG_Rev1.4.pdf
IPSH6N03LA G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A IPAK
Produkt ist nicht verfügbar
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IPU04N03LA IP(D,F,S,U)04N03LA_G.pdf
IPU04N03LA
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: P-TO251-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5199 pF @ 15 V
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IPU04N03LA G IP(D,F,S,U)04N03LA_G.pdf
IPU04N03LA G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: P-TO251-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5199 pF @ 15 V
Produkt ist nicht verfügbar
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IPU04N03LB G IP(D,F,S,U)04N03LB_G.pdf
IPU04N03LB G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: P-TO251-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
Produkt ist nicht verfügbar
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IPU05N03LA IP(D,F,S,U)05N03LA_G.pdf
IPU05N03LA
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO251-3
Produkt ist nicht verfügbar
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IPU06N03LB G IPU06N03LB%2C%20IPS06N03LB.pdf
IPU06N03LB G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Produkt ist nicht verfügbar
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IPU09N03LB G ipd09n03lb_v1.54_g.pdf
IPU09N03LB G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO251-3-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Produkt ist nicht verfügbar
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IPU10N03LA ipd10n03la_rev1.7_g.pdf
IPU10N03LA
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 30A TO251-3
Produkt ist nicht verfügbar
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IPU10N03LA G ipd10n03la_rev1.7_g.pdf
IPU10N03LA G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 30A TO251-3
Produkt ist nicht verfügbar
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IPU20N03L G ipd_u_20n03l.pdf
IPU20N03L G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: P-TO251-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Produkt ist nicht verfügbar
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IPUH6N03LA G IPDH6N03LAG_Rev1.4.pdf
IPUH6N03LA G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A IPAK
Produkt ist nicht verfügbar
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IPW60R165CPFKSA1 IPW60R165CP_rev2.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d915e489f
IPW60R165CPFKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 21A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
auf Bestellung 232 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.99 EUR
30+4.5 EUR
120+3.73 EUR
Mindestbestellmenge: 3
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IPW60R299CPFKSA1 IPW60R299CP_rev2.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c74ff4703
IPW60R299CPFKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 11A TO247-3
Produkt ist nicht verfügbar
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KP125 KP125_V1+0_DS_Rev2+14.pdf
Hersteller: Infineon Technologies
Description: IC PRESSURE SENSOR BAROM DSOF-8
Produkt ist nicht verfügbar
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KT110 KT%2CKTY.pdf
KT110
Hersteller: Infineon Technologies
Description: SENSOR PTC 1KOHM 3% TO92MINI
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: TO-92MINI
Resistance @ 25°C: 1 kOhms
Produkt ist nicht verfügbar
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KT130 KT,KTY.pdf
KT130
Hersteller: Infineon Technologies
Description: IC TEMPERATURE SENSOR SOT-23
Produkt ist nicht verfügbar
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KTY11-5 KT%2CKTY.pdf
KTY11-5
Hersteller: Infineon Technologies
Description: SENSOR PTC 1.97KOHM 3% TO92MINI
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: TO-92MINI
Resistance @ 25°C: 1.97 kOhms
Produkt ist nicht verfügbar
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KTY11-6 KT%2CKTY.pdf
KTY11-6
Hersteller: Infineon Technologies
Description: SENSOR PTC 2KOHM 3% TO92MINI
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: TO-92MINI
Resistance @ 25°C: 2 kOhms
Produkt ist nicht verfügbar
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KTY11-7 KT%2CKTY.pdf
KTY11-7
Hersteller: Infineon Technologies
Description: SENSOR PTC 2.03KOHM 3% TO92MINI
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: TO-92MINI
Resistance @ 25°C: 2.03 kOhms
Produkt ist nicht verfügbar
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kty13-6 KT%2CKTY.pdf
kty13-6
Hersteller: Infineon Technologies
Description: SENSOR PTC 2KOHM 3% SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Resistance @ 25°C: 2 kOhms
Produkt ist nicht verfügbar
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KTY13-7 KT%2CKTY.pdf
KTY13-7
Hersteller: Infineon Technologies
Description: THERMISTOR PTC 2.03K OHM SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: SOT-23-3
Resistance @ 25°C: 2.03 kOhms
Produkt ist nicht verfügbar
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KTY23-6 KT%2CKTY.pdf
KTY23-6
Hersteller: Infineon Technologies
Description: SENSOR PTC 1KOHM 3% SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: SOT-23-3
Resistance @ 25°C: 1 kOhms
Produkt ist nicht verfügbar
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KTY23-7 KT,KTY.pdf
KTY23-7
Hersteller: Infineon Technologies
Description: THERMISTOR PTC 1.015K OHM SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: SOT-23-3
Resistance @ 25°C: 1.015 kOhms
Produkt ist nicht verfügbar
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MMBD914LT3HTMA1 MMBD%2CSMBD914.pdf
MMBD914LT3HTMA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 100V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
Produkt ist nicht verfügbar
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MMBT3904LT3XT smbt3904series_mmbt3904.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d0114460005c10191
MMBT3904LT3XT
Hersteller: Infineon Technologies
Description: TRANS NPN 40V 0.2A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: PG-SOT23
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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MMBTA14LT1HTSA1 smbta14_mmbta14.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445ef0201018c
MMBTA14LT1HTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN DARL 30V 0.3A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT23
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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MMBTA42LT1HTSA1 smbta42_mmbta42.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449bfc5760237
MMBTA42LT1HTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 300V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
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MMBTA56LT1HTSA1 smbta56_mmbta56.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca38901155fad71671d8c
MMBTA56LT1HTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 80V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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PBL38620/2QNA PBL38620%2C2%20v2.pdf
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE PLCC-28
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Part Status: Discontinued at Digi-Key
Number of Circuits: 1
Power (Watts): 290 mW
Produkt ist nicht verfügbar
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PBL38621/2QNA fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE PLCC-28
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Part Status: Obsolete
Number of Circuits: 1
Power (Watts): 290 mW
Produkt ist nicht verfügbar
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PBL38621/2QNS fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE PLCC-28
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Part Status: Discontinued at Digi-Key
Number of Circuits: 1
Power (Watts): 290 mW
Produkt ist nicht verfügbar
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PBL38621/2SHA fundamentals-of-power-semiconductors
PBL38621/2SHA
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE 24-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-SSOP-24-1
Number of Circuits: 1
Power (Watts): 290 mW
Produkt ist nicht verfügbar
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PBL38621/2SOA Part_Number_Guide_Web.pdf
PBL38621/2SOA
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE PDSO-24
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-DSO-24-8
Number of Circuits: 1
Power (Watts): 290 mW
Produkt ist nicht verfügbar
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PBL38621/2SOT Part_Number_Guide_Web.pdf
PBL38621/2SOT
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE PDSO-24
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-DSO-24-8
Number of Circuits: 1
Power (Watts): 290 mW
Produkt ist nicht verfügbar
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PBL38630/2QNA PBL38630_2.pdf
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE PLCC-28
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Part Status: Discontinued at Digi-Key
Number of Circuits: 1
Power (Watts): 730 mW
Produkt ist nicht verfügbar
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PBL38630/2QNT PBL38630_2.pdf
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE PLCC-28
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Part Status: Discontinued at Digi-Key
Number of Circuits: 1
Power (Watts): 730 mW
Produkt ist nicht verfügbar
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PBL38630/2SOA PBL38630_2.pdf
PBL38630/2SOA
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE PDSO-24
Produkt ist nicht verfügbar
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PBL38640/2QNA PBL38640%2C2.pdf
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE PLCC-28
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Part Status: Obsolete
Number of Circuits: 1
Power (Watts): 730 mW
Produkt ist nicht verfügbar
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PBL38640/2QNT PBL38640,2.pdf
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE PLCC-28
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Part Status: Discontinued at Digi-Key
Number of Circuits: 1
Power (Watts): 730 mW
Produkt ist nicht verfügbar
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PBL38640/2SOT PBL38640%2C2.pdf
PBL38640/2SOT
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE PDSO-24
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-DSO-24-8
Number of Circuits: 1
Power (Watts): 730 mW
Produkt ist nicht verfügbar
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PBL38650/2QNA PBL38650%2C2.pdf
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE PLCC-28
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Part Status: Discontinued at Digi-Key
Number of Circuits: 1
Power (Watts): 730 mW
Produkt ist nicht verfügbar
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PBL38650/2QNS PBL38650,2.pdf
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE PLCC-28
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Part Status: Discontinued at Digi-Key
Number of Circuits: 1
Power (Watts): 730 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PBL38650/2QNT PBL38650%2C2.pdf
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE PLCC-28
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Part Status: Discontinued at Digi-Key
Number of Circuits: 1
Power (Watts): 730 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PEB 20256 E V2.1 PEB20256M%20E.pdf
PEB 20256 E V2.1
Hersteller: Infineon Technologies
Description: IC NETWORK CONTROLLER BGA-388-2
Produkt ist nicht verfügbar
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PEB 20256 E V2.2 PEB20256_E.pdf
PEB 20256 E V2.2
Hersteller: Infineon Technologies
Description: IC NETWORK CONTROLLER BGA-388-2
Produkt ist nicht verfügbar
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PEB 2026 T-P V1.1
PEB 2026 T-P V1.1
Hersteller: Infineon Technologies
Description: IC INTEG PWR CONTROLLER 20DSO
Produkt ist nicht verfügbar
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