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SFH 551/1V-1 Infineon Technologies SFH551-1-1(V).pdf Description: MOD PHOTO DETECT RCVR 700NM TTL
Current - Supply: 4 mA
Part Status: Obsolete
Power - Minimum Receivable: -22dBm
Data Rate: 50Mbps
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Packaging: Bulk
Produkt ist nicht verfügbar
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SFH 757 Infineon Technologies SFH757(V).pdf Description: TRANSMITTER DIODE FIBER OPTIC
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SIDC01D120H6 Infineon Technologies SIDC01D120H6.pdf Description: DIODE GP 1.2KV 600MA WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 600 mA
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 600mA
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIDC01D60C6 Infineon Technologies Description: DIODE GEN PURP WAFER
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SIDC02D60C6 Infineon Technologies SIDC02D60C6.pdf Description: DIODE GEN PURP 600V 6A WAFER
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SIDC02D60F6 Infineon Technologies SIDC02D60F6_L4314M.pdf?folderId=db3a304314dca3890115122467810c94&fileId=db3a3043271faefd0127718d00506e36 Description: DIODE GEN PURP 600V 3A WAFER
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SIDC03D120F6 Infineon Technologies SIDC03D120F6_L4375M.pdf?folderId=db3a304412b407950112b439c4b16eaf&fileId=db3a304412b407950112b439c53d6eb0 Description: DIODE GEN PURP 1.2KV 2A WAFER
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SIDC03D120H6 Infineon Technologies SIDC03D120H6.pdf Description: DIODE GEN PURP 1.2KV 3A WAFER
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SIDC03D60C6 Infineon Technologies SIDC03D60C6.pdf Description: DIODE GEN PURP 600V 10A WAFER
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SIDC03D60F6 Infineon Technologies SIDC03D60F6_L4324M.pdf?folderId=db3a304412b407950112b435eacc6416&fileId=db3a304412b407950112b435eb496417 Description: DIODE GEN PURP 600V 6A WAFER
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SIDC04D60F6X1SA3 Infineon Technologies SIDC04D60F6_L4334M.pdf?folderId=db3a304412b407950112b435ece5641b&fileId=db3a304412b407950112b435ed5e641c Description: DIODE STD 600V 9A SAWN ON FOIL
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 9A
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIDC05D60C6 Infineon Technologies SIDC05D60C6.pdf Description: DIODE GEN PURP 600V 15A WAFER
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SIDC06D120E6X1SA3 Infineon Technologies SIDC06D120E6_L4342P.pdf?folderId=db3a304412b407950112b435da3163ee&fileId=db3a304412b407950112b435daad63ef Description: DIODE GP 1.2KV 5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 5 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
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SIDC06D120F6X1SA2 Infineon Technologies SIDC06D120F6_L4345M.pdf?folderId=db3a304412b407950112b439c6e76eb4&fileId=db3a304412b407950112b439c7766eb5 Description: DIODE GP 1.2KV 5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 5 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
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SIDC06D120H6X1SA4 Infineon Technologies SIDC06D120H6.pdf Description: DIODE GP 1.2KV 7.5A WAFER
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 7.5A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
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SIDC06D60AC6X1SA1 Infineon Technologies SIDC06D60AC6.pdf Description: DIODE GP 600V 20A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 20A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIDC06D60C6 Infineon Technologies SIDC06D60C6.pdf Description: DIODE GP 600V 20A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 20A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIDC06D60E6X1SA3 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE STD 600V 10A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC06D60F6X1SA3 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE STD 600V 15A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC07D60AF6 Infineon Technologies SIDC07D60AF6_L4294M.pdf?folderId=db3a304412b407950112b435f0da6425&fileId=db3a304412b407950112b435f1586426 Description: DIODE GEN PURP 600V 22.5A WAFER
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SIDC07D60E6 Infineon Technologies Infineon-SIDC07D60E6_L4293M-DS-v01_00-en.pdf?fileId=db3a30433e30e4bf013e402a6d9f1096 Description: DIODE GEN PURP 600V 15A WAFER
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SIDC07D60F6 Infineon Technologies SIDC07D60F6_L4364M.pdf?folderId=db3a304412b407950112b435f2e4642a&fileId=db3a304412b407950112b435f361642b Description: DIODE GEN PURP 600V 22.5A WAFER
Produkt ist nicht verfügbar
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SIDC08D120F6X1SA3 Infineon Technologies SIDC08D120F6_L4355M.pdf?folderId=db3a304412b407950112b439c9296eb9&fileId=db3a304412b407950112b439c9b76eba Description: DIODE GP 1.2KV 7A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 7 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 7A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIDC08D120H6X1SA1 Infineon Technologies SIDC08D120H6.pdf Description: DIODE GP 1.2KV 10A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 10A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIDC08D60C6 Infineon Technologies SIDC08D60C6.pdf Description: DIODE STD 600V 30A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC08D60C6Y Infineon Technologies SIDC08D60C6.pdf Description: DIODE GP 600V 30A WAFER
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 30A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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SIDC09D60E6 Infineon Technologies SIDC09D60E6_L4303M.pdf?folderId=db3a304412b407950112b435faf1643e&fileId=db3a304412b407950112b435fb6e643f Description: DIODE GEN PURP 600V 20A WAFER
Produkt ist nicht verfügbar
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SIDC09D60E6Y Infineon Technologies SIDC09D60E6.pdf Description: DIODE GEN PURP 600V 20A WAFER
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SIDC09D60F6 Infineon Technologies SIDC09D60F6_L4304M.pdf?folderId=db3a304412b407950112b435f4e8642f&fileId=db3a304412b407950112b435f5666430 Description: DIODE GEN PURP 600V 30A WAFER
Produkt ist nicht verfügbar
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SIDC10D120H6X1SA5 Infineon Technologies SIDC10D120H6.pdf Description: DIODE GP 1.2KV 15A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 15A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIDC110D170H Infineon Technologies SIDC110D170H_L4501A.pdf?folderId=db3a304412b407950112b43871c56ae7&fileId=db3a304412b407950112b438724b6ae8 Description: DIODE GEN PURP 1.7KV 200A WAFER
Produkt ist nicht verfügbar
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SIDC11D60SIC3 Infineon Technologies SIDC11D60SIC3.pdf Description: DIODE SIL CARB 600V 4A WAFER
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 150pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIDC14D120E6X1SA4 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE STD 1200V 15A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
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SIDC14D120F6X1SA3 Infineon Technologies SIDC14D120F6_L4175M.pdf?folderId=db3a304412b407950112b4355d3d62c9&fileId=db3a304412b407950112b4355db362ca Description: DIODE GP 1.2KV 15A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 15A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIDC14D120H6X1SA1 Infineon Technologies SIDC14D120H6.pdf Description: DIODE STD 1200V 25A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 25 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
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SIDC14D60C6 Infineon Technologies SIDC14D60C6.pdf Description: DIODE GP 600V 50A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 50A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIDC14D60C6Y Infineon Technologies SIDC14D60C6.pdf Description: DIODE GP 600V 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC14D60E6X1SA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE STD 600V 30A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC14D60E6YX1SA1 Infineon Technologies SIDC14D60E6_L4173M.pdf?folderId=db3a304412b407950112b435fcf26443&fileId=db3a304412b407950112b435fd706444 Description: DIODE GP 600V 30A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC14D60F6X1SA2 Infineon Technologies infineon-sidc14d60c8-l4024m-ds-en.pdf Description: DIODE STD 600V 45A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC161D170HX1SA2 SIDC161D170HX1SA2 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE STANDARD 1.7KV 300A SAWN
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 300 A
Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 300
Voltage Coupled to Current - Reverse Leakage @ Vr: 1700
Produkt ist nicht verfügbar
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SIDC16D60SIC3 Infineon Technologies SIDC16D60SIC3.pdf Description: DIODE SIL CARB 600V 5A WAFER
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 170pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC19D60SIC3 Infineon Technologies SIDC19D60SIC3.pdf Description: DIODE SIL CARB 600V 6A WAFER
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC20D60C6 Infineon Technologies SIDC20D60C6.pdf Description: DIODE STD 600V 75A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 75 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC23D120E6 Infineon Technologies SIDC23D120E6_L4272P.pdf?folderId=db3a304412b407950112b435de3b63f8&fileId=db3a304412b407950112b435deb863f9 Description: DIODE GEN PURP 1.2KV 25A WAFER
Produkt ist nicht verfügbar
 Mindestbestellmenge: 178 Stücke
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SIDC23D120F6 Infineon Technologies SIDC23D120F6_L4275M.pdf?folderId=db3a304412b407950112b4355f2462ce&fileId=db3a304412b407950112b4355f9d62cf Description: DIODE GEN PURP 1.2KV 25A WAFER
Produkt ist nicht verfügbar
 Mindestbestellmenge: 178 Stücke
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SIDC23D120H6 Infineon Technologies SIDC23D120H6.pdf Description: DIODE GEN PURP 1.2KV 35A WAFER
Produkt ist nicht verfügbar
 Mindestbestellmenge: 178 Stücke
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SIDC23D60E6 Infineon Technologies SIDC23D60E6_L4273M.pdf?folderId=db3a304412b407950112b436daf866e7&fileId=db3a304412b407950112b436db7866e8 Description: DIODE GEN PURP 600V 50A WAFER
Produkt ist nicht verfügbar
 Mindestbestellmenge: 178 Stücke
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SIDC23D60E6Y Infineon Technologies SIDC23D60E6_L4273M.pdf?folderId=db3a304412b407950112b436daf866e7&fileId=db3a304412b407950112b436db7866e8 Description: DIODE GEN PURP 600V 50A WAFER
Produkt ist nicht verfügbar
 Mindestbestellmenge: 283 Stücke
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SIDC24D30SIC3 Infineon Technologies SIDC24D30SIC3.pdf Description: DIODE SIL CARB 300V 10A WAFER
Current - Reverse Leakage @ Vr: 200 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC26D60C6 Infineon Technologies SIDC26D60C6.pdf Description: DIODE STD 600V 100A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 100 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 100
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC30D120E6X1SA2 Infineon Technologies SIDC30D120E6_L4182P.pdf?folderId=db3a304412b407950112b435e06263fd&fileId=db3a304412b407950112b435e0e563fe Description: DIODE GP 1.2KV 35A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 35 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 35A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC30D120F6X1SA2 Infineon Technologies SIDC30D120F6_L4185M.pdf?folderId=db3a304412b407950112b435613862d3&fileId=db3a304412b407950112b43561b262d4 Description: DIODE GP 1.2KV 35A WAFER
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 35 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 35A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC30D120H6X1SA4 Infineon Technologies SIDC30D120H6.pdf Description: DIODE GP 1.2KV 50A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 50A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC30D60E6X1SA1 Infineon Technologies SIDC30D60E6_L4183M.pdf?folderId=db3a304412b407950112b436dd4466ec&fileId=db3a304412b407950112b436ddc466ed Description: DIODE STD 600V 75A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 75 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC32D170HX1SA3 SIDC32D170HX1SA3 Infineon Technologies SIDC32D170H_L4461A.pdf?folderId=db3a304412b407950112b4380a216a19&fileId=db3a304412b407950112b4380aa56a1a Description: DIODE STD 1700V 50A SAWN ON FOIL
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 50A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC38D60C6 Infineon Technologies SIDC38D60C6.pdf Description: DIODE GEN PURP 600V 150A WAFER
Produkt ist nicht verfügbar
 Mindestbestellmenge: 106 Stücke
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SIDC42D120E6 Infineon Technologies SIDC42D120E6_L4192P.pdf?folderId=db3a304412b407950112b435e2a46402&fileId=db3a304412b407950112b435e3206403 Description: DIODE GEN PURP 1.2KV 50A WAFER
Produkt ist nicht verfügbar
 Mindestbestellmenge: 96 Stücke
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SIDC42D120F6 Infineon Technologies SIDC42D120F6_L4195M.pdf?folderId=db3a304412b407950112b435635962d8&fileId=db3a304412b407950112b43563d462d9 Description: DIODE GEN PURP 1.2KV 50A WAFER
Produkt ist nicht verfügbar
 Mindestbestellmenge: 96 Stücke
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SIDC42D120H6 Infineon Technologies SIDC42D120H6.pdf Description: DIODE GEN PURP 1.2KV 75A WAFER
Produkt ist nicht verfügbar
 Mindestbestellmenge: 96 Stücke
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SFH 551/1V-1 SFH551-1-1(V).pdf
Hersteller: Infineon Technologies
Description: MOD PHOTO DETECT RCVR 700NM TTL
Current - Supply: 4 mA
Part Status: Obsolete
Power - Minimum Receivable: -22dBm
Data Rate: 50Mbps
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Packaging: Bulk
Produkt ist nicht verfügbar
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SFH 757 SFH757(V).pdf
Hersteller: Infineon Technologies
Description: TRANSMITTER DIODE FIBER OPTIC
Produkt ist nicht verfügbar
Mindestbestellmenge: 70 Stücke
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SIDC01D120H6 SIDC01D120H6.pdf
Hersteller: Infineon Technologies
Description: DIODE GP 1.2KV 600MA WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 600 mA
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 600mA
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC01D60C6
Hersteller: Infineon Technologies
Description: DIODE GEN PURP WAFER
Produkt ist nicht verfügbar
Mindestbestellmenge: 2346 Stücke
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SIDC02D60C6 SIDC02D60C6.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 6A WAFER
Produkt ist nicht verfügbar
Mindestbestellmenge: 1752 Stücke
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SIDC02D60F6 SIDC02D60F6_L4314M.pdf?folderId=db3a304314dca3890115122467810c94&fileId=db3a3043271faefd0127718d00506e36
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 3A WAFER
Produkt ist nicht verfügbar
Mindestbestellmenge: 3634 Stücke
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SIDC03D120F6 SIDC03D120F6_L4375M.pdf?folderId=db3a304412b407950112b439c4b16eaf&fileId=db3a304412b407950112b439c53d6eb0
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 2A WAFER
Produkt ist nicht verfügbar
Mindestbestellmenge: 1251 Stücke
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SIDC03D120H6 SIDC03D120H6.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 3A WAFER
Produkt ist nicht verfügbar
Mindestbestellmenge: 1251 Stücke
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SIDC03D60C6 SIDC03D60C6.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 10A WAFER
Produkt ist nicht verfügbar
Mindestbestellmenge: 1223 Stücke
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SIDC03D60F6 SIDC03D60F6_L4324M.pdf?folderId=db3a304412b407950112b435eacc6416&fileId=db3a304412b407950112b435eb496417
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 6A WAFER
Produkt ist nicht verfügbar
Mindestbestellmenge: 2414 Stücke
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SIDC04D60F6X1SA3 SIDC04D60F6_L4334M.pdf?folderId=db3a304412b407950112b435ece5641b&fileId=db3a304412b407950112b435ed5e641c
Hersteller: Infineon Technologies
Description: DIODE STD 600V 9A SAWN ON FOIL
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 9A
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIDC05D60C6 SIDC05D60C6.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 15A WAFER
Produkt ist nicht verfügbar
Mindestbestellmenge: 900 Stücke
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SIDC06D120E6X1SA3 SIDC06D120E6_L4342P.pdf?folderId=db3a304412b407950112b435da3163ee&fileId=db3a304412b407950112b435daad63ef
Hersteller: Infineon Technologies
Description: DIODE GP 1.2KV 5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 5 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
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SIDC06D120F6X1SA2 SIDC06D120F6_L4345M.pdf?folderId=db3a304412b407950112b439c6e76eb4&fileId=db3a304412b407950112b439c7766eb5
Hersteller: Infineon Technologies
Description: DIODE GP 1.2KV 5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 5 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC06D120H6X1SA4 SIDC06D120H6.pdf
Hersteller: Infineon Technologies
Description: DIODE GP 1.2KV 7.5A WAFER
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 7.5A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC06D60AC6X1SA1 SIDC06D60AC6.pdf
Hersteller: Infineon Technologies
Description: DIODE GP 600V 20A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 20A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC06D60C6 SIDC06D60C6.pdf
Hersteller: Infineon Technologies
Description: DIODE GP 600V 20A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 20A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC06D60E6X1SA3 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: DIODE STD 600V 10A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC06D60F6X1SA3 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: DIODE STD 600V 15A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC07D60AF6 SIDC07D60AF6_L4294M.pdf?folderId=db3a304412b407950112b435f0da6425&fileId=db3a304412b407950112b435f1586426
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 22.5A WAFER
Produkt ist nicht verfügbar
Mindestbestellmenge: 927 Stücke
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SIDC07D60E6 Infineon-SIDC07D60E6_L4293M-DS-v01_00-en.pdf?fileId=db3a30433e30e4bf013e402a6d9f1096
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 15A WAFER
Produkt ist nicht verfügbar
Mindestbestellmenge: 577 Stücke
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SIDC07D60F6 SIDC07D60F6_L4364M.pdf?folderId=db3a304412b407950112b435f2e4642a&fileId=db3a304412b407950112b435f361642b
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 22.5A WAFER
Produkt ist nicht verfügbar
Mindestbestellmenge: 561 Stücke
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SIDC08D120F6X1SA3 SIDC08D120F6_L4355M.pdf?folderId=db3a304412b407950112b439c9296eb9&fileId=db3a304412b407950112b439c9b76eba
Hersteller: Infineon Technologies
Description: DIODE GP 1.2KV 7A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 7 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 7A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC08D120H6X1SA1 SIDC08D120H6.pdf
Hersteller: Infineon Technologies
Description: DIODE GP 1.2KV 10A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 10A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC08D60C6 SIDC08D60C6.pdf
Hersteller: Infineon Technologies
Description: DIODE STD 600V 30A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC08D60C6Y SIDC08D60C6.pdf
Hersteller: Infineon Technologies
Description: DIODE GP 600V 30A WAFER
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 30A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC09D60E6 SIDC09D60E6_L4303M.pdf?folderId=db3a304412b407950112b435faf1643e&fileId=db3a304412b407950112b435fb6e643f
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 20A WAFER
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIDC09D60E6Y SIDC09D60E6.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 20A WAFER
Produkt ist nicht verfügbar
Mindestbestellmenge: 702 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIDC09D60F6 SIDC09D60F6_L4304M.pdf?folderId=db3a304412b407950112b435f4e8642f&fileId=db3a304412b407950112b435f5666430
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 30A WAFER
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIDC10D120H6X1SA5 SIDC10D120H6.pdf
Hersteller: Infineon Technologies
Description: DIODE GP 1.2KV 15A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 15A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC110D170H SIDC110D170H_L4501A.pdf?folderId=db3a304412b407950112b43871c56ae7&fileId=db3a304412b407950112b438724b6ae8
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.7KV 200A WAFER
Produkt ist nicht verfügbar
Mindestbestellmenge: 31 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIDC11D60SIC3 SIDC11D60SIC3.pdf
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 4A WAFER
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 150pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 3459 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIDC14D120E6X1SA4 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: DIODE STD 1200V 15A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC14D120F6X1SA3 SIDC14D120F6_L4175M.pdf?folderId=db3a304412b407950112b4355d3d62c9&fileId=db3a304412b407950112b4355db362ca
Hersteller: Infineon Technologies
Description: DIODE GP 1.2KV 15A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 15A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC14D120H6X1SA1 SIDC14D120H6.pdf
Hersteller: Infineon Technologies
Description: DIODE STD 1200V 25A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 25 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC14D60C6 SIDC14D60C6.pdf
Hersteller: Infineon Technologies
Description: DIODE GP 600V 50A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 50A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC14D60C6Y SIDC14D60C6.pdf
Hersteller: Infineon Technologies
Description: DIODE GP 600V 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC14D60E6X1SA1 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: DIODE STD 600V 30A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC14D60E6YX1SA1 SIDC14D60E6_L4173M.pdf?folderId=db3a304412b407950112b435fcf26443&fileId=db3a304412b407950112b435fd706444
Hersteller: Infineon Technologies
Description: DIODE GP 600V 30A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC14D60F6X1SA2 infineon-sidc14d60c8-l4024m-ds-en.pdf
Hersteller: Infineon Technologies
Description: DIODE STD 600V 45A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC161D170HX1SA2 fundamentals-of-power-semiconductors
SIDC161D170HX1SA2
Hersteller: Infineon Technologies
Description: DIODE STANDARD 1.7KV 300A SAWN
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 300 A
Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 300
Voltage Coupled to Current - Reverse Leakage @ Vr: 1700
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC16D60SIC3 SIDC16D60SIC3.pdf
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 5A WAFER
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 170pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC19D60SIC3 SIDC19D60SIC3.pdf
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 6A WAFER
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC20D60C6 SIDC20D60C6.pdf
Hersteller: Infineon Technologies
Description: DIODE STD 600V 75A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 75 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC23D120E6 SIDC23D120E6_L4272P.pdf?folderId=db3a304412b407950112b435de3b63f8&fileId=db3a304412b407950112b435deb863f9
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 25A WAFER
Produkt ist nicht verfügbar
Mindestbestellmenge: 178 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIDC23D120F6 SIDC23D120F6_L4275M.pdf?folderId=db3a304412b407950112b4355f2462ce&fileId=db3a304412b407950112b4355f9d62cf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 25A WAFER
Produkt ist nicht verfügbar
Mindestbestellmenge: 178 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIDC23D120H6 SIDC23D120H6.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 35A WAFER
Produkt ist nicht verfügbar
Mindestbestellmenge: 178 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIDC23D60E6 SIDC23D60E6_L4273M.pdf?folderId=db3a304412b407950112b436daf866e7&fileId=db3a304412b407950112b436db7866e8
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 50A WAFER
Produkt ist nicht verfügbar
Mindestbestellmenge: 178 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIDC23D60E6Y SIDC23D60E6_L4273M.pdf?folderId=db3a304412b407950112b436daf866e7&fileId=db3a304412b407950112b436db7866e8
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 50A WAFER
Produkt ist nicht verfügbar
Mindestbestellmenge: 283 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIDC24D30SIC3 SIDC24D30SIC3.pdf
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 300V 10A WAFER
Current - Reverse Leakage @ Vr: 200 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC26D60C6 SIDC26D60C6.pdf
Hersteller: Infineon Technologies
Description: DIODE STD 600V 100A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 100 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 100
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC30D120E6X1SA2 SIDC30D120E6_L4182P.pdf?folderId=db3a304412b407950112b435e06263fd&fileId=db3a304412b407950112b435e0e563fe
Hersteller: Infineon Technologies
Description: DIODE GP 1.2KV 35A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 35 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 35A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC30D120F6X1SA2 SIDC30D120F6_L4185M.pdf?folderId=db3a304412b407950112b435613862d3&fileId=db3a304412b407950112b43561b262d4
Hersteller: Infineon Technologies
Description: DIODE GP 1.2KV 35A WAFER
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 35 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 35A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC30D120H6X1SA4 SIDC30D120H6.pdf
Hersteller: Infineon Technologies
Description: DIODE GP 1.2KV 50A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 50A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC30D60E6X1SA1 SIDC30D60E6_L4183M.pdf?folderId=db3a304412b407950112b436dd4466ec&fileId=db3a304412b407950112b436ddc466ed
Hersteller: Infineon Technologies
Description: DIODE STD 600V 75A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 75 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC32D170HX1SA3 SIDC32D170H_L4461A.pdf?folderId=db3a304412b407950112b4380a216a19&fileId=db3a304412b407950112b4380aa56a1a
SIDC32D170HX1SA3
Hersteller: Infineon Technologies
Description: DIODE STD 1700V 50A SAWN ON FOIL
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 50A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC38D60C6 SIDC38D60C6.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 150A WAFER
Produkt ist nicht verfügbar
Mindestbestellmenge: 106 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIDC42D120E6 SIDC42D120E6_L4192P.pdf?folderId=db3a304412b407950112b435e2a46402&fileId=db3a304412b407950112b435e3206403
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 50A WAFER
Produkt ist nicht verfügbar
Mindestbestellmenge: 96 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIDC42D120F6 SIDC42D120F6_L4195M.pdf?folderId=db3a304412b407950112b435635962d8&fileId=db3a304412b407950112b43563d462d9
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 50A WAFER
Produkt ist nicht verfügbar
Mindestbestellmenge: 96 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIDC42D120H6 SIDC42D120H6.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 75A WAFER
Produkt ist nicht verfügbar
Mindestbestellmenge: 96 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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