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IPP054NE8NGHKSA2 IPP054NE8NGHKSA2 Infineon Technologies IP%28B%2CI%2CP%2905xNE8N.pdf Description: MOSFET N-CH 85V 100A TO220-3
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 12100 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 85 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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IPP05CN10NGXKSA1 IPP05CN10NGXKSA1 Infineon Technologies Infineon-IPP05CN10N-DS-v01_02-en.pdf?fileId=db3a30432313ff5e012393ad8dec03e7 Description: MOSFET N-CH 100V 100A TO220-3
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IPP05N03LB G IPP05N03LB G Infineon Technologies IPP05N03LB_G.pdf Description: MOSFET N-CH 30V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3209 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IPP065N06LGAKSA1 IPP065N06LGAKSA1 Infineon Technologies IP%28B%2CP%29065N06L_G.pdf Description: MOSFET N-CH 60V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 80A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 180µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 30 V
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IPP06CN10N G IPP06CN10N G Infineon Technologies IP%28B%2CI%2CP%2906CN10N_G.pdf Description: MOSFET N-CH 100V 100A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 180µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IPP06CNE8N G IPP06CNE8N G Infineon Technologies IP(B,I,P)06CNE8N_G.pdf Description: MOSFET N-CH 85V 100A TO-220
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IPP070N06L G IPP070N06L G Infineon Technologies IPB%2CIPP070N06L_G.pdf Description: MOSFET N-CH 60V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2V @ 150µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 30 V
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IPP070N06N G IPP070N06N G Infineon Technologies IP%28B%2CI%2CP%29070N06N_G.pdf Description: MOSFET N-CH 60V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 80A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V
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IPP080N06N G IPP080N06N G Infineon Technologies IP(B,P)080N06N_G.pdf Description: MOSFET N-CH 60V 80A TO220-3
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
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IPP100N06S3-03 IPP100N06S3-03 Infineon Technologies IPB%28I%2CP%29100N06S3-03.pdf Description: MOSFET N-CH 55V 100A TO220-3
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 21620 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 480 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 230µA
Power Dissipation (Max): 300W (Tc)
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IPP100N06S3-04 IPP100N06S3-04 Infineon Technologies IPB%28I%2CP%29100N06S3-04.pdf Description: MOSFET N-CH 55V 100A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 14230 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 314 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IPP100N06S3L-03 IPP100N06S3L-03 Infineon Technologies IPB%28I%2CP%29100N06S3L-03.pdf Description: MOSFET N-CH 55V 100A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 26240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2.2V @ 230µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Qualification: AEC-Q101
Grade: Automotive
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IPP100N06S3L-04 IPP100N06S3L-04 Infineon Technologies IP%28B%2CI%2CP%29N06S3L-04.pdf Description: MOSFET N-CH 55V 100A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 17270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 362 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IPP10N03LB G IPP10N03LB G Infineon Technologies ipp10n03lb_rev0.95.pdf Description: MOSFET N-CH 30V 50A TO220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1639 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
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IPP11N03LA IPP11N03LA Infineon Technologies IPP11N03LA_Rev1.4_G.pdf Description: MOSFET N-CH 25V 30A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1358 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IPP120N06NGAKSA1 IPP120N06NGAKSA1 Infineon Technologies IPB%2CIPP120N06N_G.pdf Description: MOSFET N-CH 60V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 94µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 30 V
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IPP12CN10N G IPP12CN10N G Infineon Technologies IPP12CN10N_Rev1.05.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c236e467c Description: MOSFET N-CH 100V 67A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 83µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 67A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IPP12CNE8N G IPP12CNE8N G Infineon Technologies IPx12CNE8N_Rev1.06.pdf Description: MOSFET N-CH 85V 67A TO-220
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IPP16CN10NGXKSA1 IPP16CN10NGXKSA1 Infineon Technologies Infineon-IPP16CN10N-DS-v01_06-en.pdf?fileId=db3a30432313ff5e012393cd8f170432 Description: MOSFET N-CH 100V 53A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 61µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 53A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IPP16CNE8N G IPP16CNE8N G Infineon Technologies IP(B,D,I,P)16CNE8N_G.pdf Description: MOSFET N-CH 85V 53A TO-220
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IPP25N06S325XK IPP25N06S325XK Infineon Technologies IPB(I,P)25N06S3-25.pdf Description: MOSFET N-CH 55V 25A TO220-3
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 20µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 25.1mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1862 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
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IPP25N06S3L-22 IPP25N06S3L-22 Infineon Technologies IPB(I,P)25N06S3L-22.pdf Description: MOSFET N-CH 55V 25A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 21.6mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IPP26CN10NGHKSA1 IPP26CN10NGHKSA1 Infineon Technologies IPD25CN10N+Rev1.06.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42b420244aa Description: MOSFET N-CH 100V 35A TO-220
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IPP26CNE8N G IPP26CNE8N G Infineon Technologies IP(B,D,I,P,U)26CNE8N_G.pdf Description: MOSFET N-CH 85V 35A TO-220
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IPP45N06S3-16 IPP45N06S3-16 Infineon Technologies IPB(I,P)45N06S3-16.pdf Description: MOSFET N-CH 55V 45A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 30µA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IPP45N06S3L-13 IPP45N06S3L-13 Infineon Technologies IPB%28I%2CP%2945N06S3L-13.pdf Description: MOSFET N-CH 55V 45A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IPP50CN10NGXKSA1 IPP50CN10NGXKSA1 Infineon Technologies IPx%2849%2C50%29CN10N_G.pdf Description: MOSFET N-CH 100V 20A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 20µA
Power Dissipation (Max): 44W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP60R125CPXKSA1 IPP60R125CPXKSA1 Infineon Technologies IPP60R125CP_rev2.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c0e59465d Description: MOSFET N-CH 650V 25A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IPP77N06S3-09 IPP77N06S3-09 Infineon Technologies IPB,IPI,IPP77N06S3-09.pdf Description: MOSFET N-CH 55V 77A TO-220
Produkt ist nicht verfügbar
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IPP80CN10NGHKSA1 IPP80CN10NGHKSA1 Infineon Technologies IPP80CN10N_Rev1.07.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c2aaf468d Description: MOSFET N-CH 100V 13A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 12µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP80N06S3-05 IPP80N06S3-05 Infineon Technologies IP(B,I,P)80N06S3-05.pdf Description: MOSFET N-CH 55V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 10760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 110µA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 63A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP80N06S3-07 IPP80N06S3-07 Infineon Technologies IPB(I,P)80N06S3-07.pdf Description: MOSFET N-CH 55V 80A TO220-3
Power Dissipation (Max): 135W (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 51A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7768 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 80µA
Produkt ist nicht verfügbar
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IPP80N06S3L-05 IPP80N06S3L-05 Infineon Technologies IPB(I,P)N06S3L-05.pdf Description: MOSFET N-CH 55V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 13060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2.2V @ 115µA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 69A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP80N06S3L-06 IPP80N06S3L-06 Infineon Technologies IPB(I,P)80N06S3L-06.pdf Description: MOSFET N-CH 55V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 9417 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2.2V @ 80µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 56A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP80N06S3L-08 IPP80N06S3L-08 Infineon Technologies IPB(I,P)80N06S3L-08.pdf Description: MOSFET N-CH 55V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 6475 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2.2V @ 55µA
Power Dissipation (Max): 105W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPS03N03LA G IPS03N03LA G Infineon Technologies IPD03N03LAG_Rev1.3.pdf Description: MOSFET N-CH 25V 90A TO251-3
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IPS03N03LB G IPS03N03LB G Infineon Technologies IP(D,S)03N03LB_G.pdf Description: MOSFET N-CH 30V 90A TO251-3
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IPS04N03LA G IPS04N03LA G Infineon Technologies IP%28D%2CF%2CS%2CU%2904N03LA_G.pdf Description: MOSFET N-CH 25V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 5199 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO251-3-11
Vgs(th) (Max) @ Id: 2V @ 80µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Produkt ist nicht verfügbar
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IPS04N03LB G IPS04N03LB G Infineon Technologies IP(D,F,S,U)04N03LB_G.pdf Description: MOSFET N-CH 30V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO251-3-11
Vgs(th) (Max) @ Id: 2V @ 70µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Produkt ist nicht verfügbar
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IPS06N03LA G IPS06N03LA G Infineon Technologies IP%28D%2CF%2CS%2CU%2906N03LA_G.pdf Description: MOSFET N-CH 25V 50A TO251-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO251-3-11
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
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IPS06N03LZ G IPS06N03LZ G Infineon Technologies IPD_S_U06N03LZ_G.pdf Description: MOSFET N-CH 25V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO251-3-11
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Produkt ist nicht verfügbar
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IPS09N03LA G IPS09N03LA G Infineon Technologies IP%28D%2CF%2CS%2CU%2909N03LA_G.pdf Description: MOSFET N-CH 25V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 30A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1642 pF @ 15 V
Produkt ist nicht verfügbar
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IPS09N03LB G IPS09N03LB G Infineon Technologies ipd09n03lb_v1.54_g.pdf Description: MOSFET N-CH 30V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO251-3-11
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Produkt ist nicht verfügbar
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IPS10N03LA G IPS10N03LA G Infineon Technologies ipd10n03la_rev1.7_g.pdf Description: MOSFET N-CH 25V 30A TO251-3
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IPS20N03L G IPS20N03L G Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 30V 30A TO251-3
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: PG-TO251-3-11
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Produkt ist nicht verfügbar
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IPSH4N03LA G IPSH4N03LA G Infineon Technologies IP(D,S)H4N03LA_G.pdf Description: MOSFET N-CH 25V 90A TO251-3
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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IPSH5N03LA G IPSH5N03LA G Infineon Technologies IPDH5N03LA_Rev1.4_G.pdf Description: MOSFET N-CH 25V 50A IPAK
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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IPSH6N03LA G IPSH6N03LA G Infineon Technologies IPDH6N03LAG_Rev1.4.pdf Description: MOSFET N-CH 25V 50A IPAK
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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IPU04N03LA IPU04N03LA Infineon Technologies IP(D,F,S,U)04N03LA_G.pdf Description: MOSFET N-CH 25V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 5199 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: P-TO251-3-1
Vgs(th) (Max) @ Id: 2V @ 80µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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IPU04N03LA G IPU04N03LA G Infineon Technologies IP(D,F,S,U)04N03LA_G.pdf Description: MOSFET N-CH 25V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 5199 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: P-TO251-3-1
Vgs(th) (Max) @ Id: 2V @ 80µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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IPU04N03LB G IPU04N03LB G Infineon Technologies IP(D,F,S,U)04N03LB_G.pdf Description: MOSFET N-CH 30V 50A TO251-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: P-TO251-3-1
Vgs(th) (Max) @ Id: 2V @ 70µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Produkt ist nicht verfügbar
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IPU05N03LA IPU05N03LA Infineon Technologies IP(D,F,S,U)05N03LA_G.pdf Description: MOSFET N-CH 25V 50A TO251-3
Produkt ist nicht verfügbar
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IPU06N03LB G IPU06N03LB G Infineon Technologies IPU06N03LB%2C%20IPS06N03LB.pdf Description: MOSFET N-CH 30V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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IPU09N03LB G IPU09N03LB G Infineon Technologies ipd09n03lb_v1.54_g.pdf Description: MOSFET N-CH 30V 50A TO251-3
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO251-3-21
Vgs(th) (Max) @ Id: 2V @ 20µA
Produkt ist nicht verfügbar
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IPU10N03LA IPU10N03LA Infineon Technologies ipd10n03la_rev1.7_g.pdf Description: MOSFET N-CH 25V 30A TO251-3
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IPU10N03LA G IPU10N03LA G Infineon Technologies ipd10n03la_rev1.7_g.pdf Description: MOSFET N-CH 25V 30A TO251-3
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IPU20N03L G IPU20N03L G Infineon Technologies ipd_u_20n03l.pdf Description: MOSFET N-CH 30V 30A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: P-TO251-3-1
Vgs(th) (Max) @ Id: 2V @ 25µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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IPUH6N03LA G IPUH6N03LA G Infineon Technologies IPDH6N03LAG_Rev1.4.pdf Description: MOSFET N-CH 25V 50A IPAK
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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IPW60R165CPFKSA1 IPW60R165CPFKSA1 Infineon Technologies IPW60R165CP_rev2.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d915e489f Description: MOSFET N-CH 600V 21A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
auf Bestellung 270 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.02 EUR
30+6.21 EUR
120+5.15 EUR
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IPW60R299CPFKSA1 IPW60R299CPFKSA1 Infineon Technologies IPW60R299CP_rev2.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c74ff4703 Description: MOSFET N-CH 600V 11A TO247-3
Produkt ist nicht verfügbar
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IPP054NE8NGHKSA2 IP%28B%2CI%2CP%2905xNE8N.pdf
IPP054NE8NGHKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 85V 100A TO220-3
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 12100 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 85 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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IPP05CN10NGXKSA1 Infineon-IPP05CN10N-DS-v01_02-en.pdf?fileId=db3a30432313ff5e012393ad8dec03e7
IPP05CN10NGXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A TO220-3
Produkt ist nicht verfügbar
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IPP05N03LB G IPP05N03LB_G.pdf
IPP05N03LB G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3209 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP065N06LGAKSA1 IP%28B%2CP%29065N06L_G.pdf
IPP065N06LGAKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 80A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 180µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 30 V
Produkt ist nicht verfügbar
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IPP06CN10N G IP%28B%2CI%2CP%2906CN10N_G.pdf
IPP06CN10N G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 180µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP06CNE8N G IP(B,I,P)06CNE8N_G.pdf
IPP06CNE8N G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 85V 100A TO-220
Produkt ist nicht verfügbar
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IPP070N06L G IPB%2CIPP070N06L_G.pdf
IPP070N06L G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2V @ 150µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 30 V
Produkt ist nicht verfügbar
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IPP070N06N G IP%28B%2CI%2CP%29070N06N_G.pdf
IPP070N06N G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 80A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V
Produkt ist nicht verfügbar
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IPP080N06N G IP(B,P)080N06N_G.pdf
IPP080N06N G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO220-3
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Produkt ist nicht verfügbar
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IPP100N06S3-03 IPB%28I%2CP%29100N06S3-03.pdf
IPP100N06S3-03
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 100A TO220-3
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 21620 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 480 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 230µA
Power Dissipation (Max): 300W (Tc)
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IPP100N06S3-04 IPB%28I%2CP%29100N06S3-04.pdf
IPP100N06S3-04
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 100A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 14230 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 314 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP100N06S3L-03 IPB%28I%2CP%29100N06S3L-03.pdf
IPP100N06S3L-03
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 100A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 26240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2.2V @ 230µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Qualification: AEC-Q101
Grade: Automotive
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IPP100N06S3L-04 IP%28B%2CI%2CP%29N06S3L-04.pdf
IPP100N06S3L-04
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 100A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 17270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 362 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IPP10N03LB G ipp10n03lb_rev0.95.pdf
IPP10N03LB G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1639 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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IPP11N03LA IPP11N03LA_Rev1.4_G.pdf
IPP11N03LA
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 30A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1358 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP120N06NGAKSA1 IPB%2CIPP120N06N_G.pdf
IPP120N06NGAKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 94µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 30 V
Produkt ist nicht verfügbar
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IPP12CN10N G IPP12CN10N_Rev1.05.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c236e467c
IPP12CN10N G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 67A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 83µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 67A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP12CNE8N G IPx12CNE8N_Rev1.06.pdf
IPP12CNE8N G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 85V 67A TO-220
Produkt ist nicht verfügbar
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IPP16CN10NGXKSA1 Infineon-IPP16CN10N-DS-v01_06-en.pdf?fileId=db3a30432313ff5e012393cd8f170432
IPP16CN10NGXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 53A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 61µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 53A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 124 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.67 EUR
10+3.28 EUR
100+2.64 EUR
Mindestbestellmenge: 6 Stücke
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IPP16CNE8N G IP(B,D,I,P)16CNE8N_G.pdf
IPP16CNE8N G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 85V 53A TO-220
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPP25N06S325XK IPB(I,P)25N06S3-25.pdf
IPP25N06S325XK
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 25A TO220-3
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 20µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 25.1mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1862 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Produkt ist nicht verfügbar
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IPP25N06S3L-22 IPB(I,P)25N06S3L-22.pdf
IPP25N06S3L-22
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 25A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 21.6mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP26CN10NGHKSA1 IPD25CN10N+Rev1.06.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42b420244aa
IPP26CN10NGHKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 35A TO-220
Produkt ist nicht verfügbar
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IPP26CNE8N G IP(B,D,I,P,U)26CNE8N_G.pdf
IPP26CNE8N G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 85V 35A TO-220
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPP45N06S3-16 IPB(I,P)45N06S3-16.pdf
IPP45N06S3-16
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 45A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 30µA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP45N06S3L-13 IPB%28I%2CP%2945N06S3L-13.pdf
IPP45N06S3L-13
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 45A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP50CN10NGXKSA1 IPx%2849%2C50%29CN10N_G.pdf
IPP50CN10NGXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 20A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 20µA
Power Dissipation (Max): 44W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP60R125CPXKSA1 IPP60R125CP_rev2.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c0e59465d
IPP60R125CPXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 25A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 2332 Stücke:
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2+12.07 EUR
50+6.38 EUR
100+5.83 EUR
500+4.88 EUR
1000+4.57 EUR
2000+4.43 EUR
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IPP77N06S3-09 IPB,IPI,IPP77N06S3-09.pdf
IPP77N06S3-09
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 77A TO-220
Produkt ist nicht verfügbar
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IPP80CN10NGHKSA1 IPP80CN10N_Rev1.07.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c2aaf468d
IPP80CN10NGHKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 13A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 12µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP80N06S3-05 IP(B,I,P)80N06S3-05.pdf
IPP80N06S3-05
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 10760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 110µA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 63A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP80N06S3-07 IPB(I,P)80N06S3-07.pdf
IPP80N06S3-07
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Power Dissipation (Max): 135W (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 51A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7768 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 80µA
Produkt ist nicht verfügbar
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IPP80N06S3L-05 IPB(I,P)N06S3L-05.pdf
IPP80N06S3L-05
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 13060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2.2V @ 115µA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 69A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP80N06S3L-06 IPB(I,P)80N06S3L-06.pdf
IPP80N06S3L-06
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 9417 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2.2V @ 80µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 56A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP80N06S3L-08 IPB(I,P)80N06S3L-08.pdf
IPP80N06S3L-08
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 6475 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2.2V @ 55µA
Power Dissipation (Max): 105W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPS03N03LA G IPD03N03LAG_Rev1.3.pdf
IPS03N03LA G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 90A TO251-3
Produkt ist nicht verfügbar
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IPS03N03LB G IP(D,S)03N03LB_G.pdf
IPS03N03LB G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 90A TO251-3
Produkt ist nicht verfügbar
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IPS04N03LA G IP%28D%2CF%2CS%2CU%2904N03LA_G.pdf
IPS04N03LA G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 5199 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO251-3-11
Vgs(th) (Max) @ Id: 2V @ 80µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Produkt ist nicht verfügbar
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IPS04N03LB G IP(D,F,S,U)04N03LB_G.pdf
IPS04N03LB G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO251-3-11
Vgs(th) (Max) @ Id: 2V @ 70µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Produkt ist nicht verfügbar
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IPS06N03LA G IP%28D%2CF%2CS%2CU%2906N03LA_G.pdf
IPS06N03LA G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO251-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO251-3-11
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
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IPS06N03LZ G IPD_S_U06N03LZ_G.pdf
IPS06N03LZ G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO251-3-11
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Produkt ist nicht verfügbar
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IPS09N03LA G IP%28D%2CF%2CS%2CU%2909N03LA_G.pdf
IPS09N03LA G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 30A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1642 pF @ 15 V
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IPS09N03LB G ipd09n03lb_v1.54_g.pdf
IPS09N03LB G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO251-3-11
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Produkt ist nicht verfügbar
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IPS10N03LA G ipd10n03la_rev1.7_g.pdf
IPS10N03LA G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 30A TO251-3
Produkt ist nicht verfügbar
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IPS20N03L G fundamentals-of-power-semiconductors
IPS20N03L G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO251-3
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: PG-TO251-3-11
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Produkt ist nicht verfügbar
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IPSH4N03LA G IP(D,S)H4N03LA_G.pdf
IPSH4N03LA G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 90A TO251-3
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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IPSH5N03LA G IPDH5N03LA_Rev1.4_G.pdf
IPSH5N03LA G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A IPAK
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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IPSH6N03LA G IPDH6N03LAG_Rev1.4.pdf
IPSH6N03LA G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A IPAK
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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IPU04N03LA IP(D,F,S,U)04N03LA_G.pdf
IPU04N03LA
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 5199 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: P-TO251-3-1
Vgs(th) (Max) @ Id: 2V @ 80µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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IPU04N03LA G IP(D,F,S,U)04N03LA_G.pdf
IPU04N03LA G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 5199 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: P-TO251-3-1
Vgs(th) (Max) @ Id: 2V @ 80µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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IPU04N03LB G IP(D,F,S,U)04N03LB_G.pdf
IPU04N03LB G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO251-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: P-TO251-3-1
Vgs(th) (Max) @ Id: 2V @ 70µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Produkt ist nicht verfügbar
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IPU05N03LA IP(D,F,S,U)05N03LA_G.pdf
IPU05N03LA
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO251-3
Produkt ist nicht verfügbar
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IPU06N03LB G IPU06N03LB%2C%20IPS06N03LB.pdf
IPU06N03LB G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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IPU09N03LB G ipd09n03lb_v1.54_g.pdf
IPU09N03LB G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO251-3
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO251-3-21
Vgs(th) (Max) @ Id: 2V @ 20µA
Produkt ist nicht verfügbar
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IPU10N03LA ipd10n03la_rev1.7_g.pdf
IPU10N03LA
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 30A TO251-3
Produkt ist nicht verfügbar
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IPU10N03LA G ipd10n03la_rev1.7_g.pdf
IPU10N03LA G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 30A TO251-3
Produkt ist nicht verfügbar
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IPU20N03L G ipd_u_20n03l.pdf
IPU20N03L G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: P-TO251-3-1
Vgs(th) (Max) @ Id: 2V @ 25µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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IPUH6N03LA G IPDH6N03LAG_Rev1.4.pdf
IPUH6N03LA G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A IPAK
Produkt ist nicht verfügbar
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IPW60R165CPFKSA1 IPW60R165CP_rev2.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d915e489f
IPW60R165CPFKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 21A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
auf Bestellung 270 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.02 EUR
30+6.21 EUR
120+5.15 EUR
Mindestbestellmenge: 2 Stücke
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IPW60R299CPFKSA1 IPW60R299CP_rev2.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c74ff4703
IPW60R299CPFKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 11A TO247-3
Produkt ist nicht verfügbar
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