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SPP80N06S2-H5 SPP80N06S2-H5 Infineon Technologies SP%28P%2CB%2980N06S2-H5.pdf Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
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SPP80N06S2L-05 SPP80N06S2L-05 Infineon Technologies SP%28B%2CI%2CP%2980N06S2L-05.pdf Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7530 pF @ 25 V
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SPP80N06S2L-06 SPP80N06S2L-06 Infineon Technologies SP%28B%2CP%2980N06S2L-06.pdf Description: MOSFET N-CH 55V 80A TO220-3
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2V @ 180µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 69A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
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SPP80N06S2L-07 SPP80N06S2L-07 Infineon Technologies SP%28P%2CB%2980N06S2L-07.pdf Description: MOSFET N-CH 55V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 4210 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2V @ 150µA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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SPP80N06S2L-09 SPP80N06S2L-09 Infineon Technologies SP%28B%2CP%2980N06S2L-09.pdf Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 52A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 2V @ 125µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 25 V
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SPP80N06S2L-11 SPP80N06S2L-11 Infineon Technologies SP%28B%2CI%2CP%2980N06S2L-11.pdf Description: MOSFET N-CH 55V 80A TO220-3
Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2V @ 93µA
Power Dissipation (Max): 158W (Tc)
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SPP80N06S2L-H5 SPP80N06S2L-H5 Infineon Technologies SP%28P%2CB%2980N06S2L-H5.pdf Description: MOSFET N-CH 55V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2V @ 230µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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SPP80N08S2-07 SPP80N08S2-07 Infineon Technologies SP%28B%2CI%2CP%2980N08S2-07.pdf Description: MOSFET N-CH 75V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 66A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6130 pF @ 25 V
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SPP80N08S2L-07 SPP80N08S2L-07 Infineon Technologies SP%28B%2CP%29N08S2L-07.pdf Description: MOSFET N-CH 75V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 67A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
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SPP80N10L SPP80N10L Infineon Technologies SP%28I%2CP%2980N10L.pdf Description: MOSFET N-CH 100V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 58A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 25 V
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SPU01N60C3BKMA1 SPU01N60C3BKMA1 Infineon Technologies SPD_U01N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e18974951 Description: MOSFET N-CH 650V 800MA TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 11W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO251-3-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
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SPU02N60S5BKMA1 SPU02N60S5BKMA1 Infineon Technologies SPD_U02N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c91374727 Description: MOSFET N-CH 600V 1.8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 80µA
Supplier Device Package: PG-TO251-3-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
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SPU03N60S5BKMA1 SPU03N60S5BKMA1 Infineon Technologies SPD_U03N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c8ab0471f Description: MOSFET N-CH 600V 3.2A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 135µA
Supplier Device Package: PG-TO251-3-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
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SPU04N60C3BKMA1 SPU04N60C3BKMA1 Infineon Technologies Infineon-SPD_U04N60C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f1a0318e31921 Description: MOSFET N-CH 650V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO251-3-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
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SPU04N60S5BKMA1 SPU04N60S5BKMA1 Infineon Technologies Infineon-SPD_U04N60S5-DS-v02_05-en.pdf?fileId=db3a304318f3fe29011908be09e029c0 Description: MOSFET N-CH 600V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 200µA
Supplier Device Package: PG-TO251-3-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
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SPU07N60C3BKMA1 SPU07N60C3BKMA1 Infineon Technologies Infineon-SPD_U07N60C3-DS-v02_07-en.pdf?fileId=db3a30433f1b26e8013f1e7536e102d4 Description: MOSFET N-CH 650V 7.3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO251-3-21
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
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SPU07N60S5 SPU07N60S5 Infineon Technologies SPD_U07N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c8df34723 Description: MOSFET N-CH 600V 7.3A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3-21
Vgs(th) (Max) @ Id: 5.5V @ 350µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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SPU11N10 SPU11N10 Infineon Technologies SPD_U11N10.pdf Description: MOSFET N-CH 100V 10.5A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: P-TO251-3-1
Vgs(th) (Max) @ Id: 4V @ 21µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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SPU18P06P SPU18P06P Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET P-CH 60V 18.6A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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SPU30N03S2-08 SPU30N03S2-08 Infineon Technologies SPU30N03S2-08.pdf Description: MOSFET N-CH 30V 30A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: P-TO251-3-1
Vgs(th) (Max) @ Id: 4V @ 85µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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SPU30P06P SPU30P06P Infineon Technologies SPD30P06P_310702.pdf Description: MOSFET P-CH 60V 30A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 4V @ 1.7mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 21.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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SPW11N60C3FKSA1 SPW11N60C3FKSA1 Infineon Technologies SPW11N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d87b14893 Description: MOSFET N-CH 650V 11A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
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SPW11N60CFDFKSA1 SPW11N60CFDFKSA1 Infineon Technologies SPW11N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e5f1849b3 Description: MOSFET N-CH 650V 11A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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SPW11N60S5FKSA1 SPW11N60S5FKSA1 Infineon Technologies SPW11N60S5_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d68e0486f Description: MOSFET N-CH 600V 11A TO247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO247-3-1
Vgs(th) (Max) @ Id: 5.5V @ 500µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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SPW15N60C3FKSA1 SPW15N60C3FKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 650V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 9.4A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 136 Stücke:
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2+11.25 EUR
30+6.37 EUR
120+5.28 EUR
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SPW17N80C3A SPW17N80C3A Infineon Technologies SPW17N80C3.pdf Description: MOSFET N-CH 800V 17A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO247-3-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 25 V
Produkt ist nicht verfügbar
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SPW20N60CFDFKSA1 SPW20N60CFDFKSA1 Infineon Technologies SPW20N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c02c5464d Description: MOSFET N-CH 650V 20.7A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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SPW24N60C3FKSA1 SPW24N60C3FKSA1 Infineon Technologies SPW24N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d61f14867 Description: MOSFET N-CH 650V 24.3A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.3A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 15.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1.2mA
Supplier Device Package: PG-TO247-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
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SPW35N60C3FKSA1 SPW35N60C3FKSA1 Infineon Technologies SPW35N60C3_Rev%5B1%5D.2.5_PCN.pdf?fileId=db3a3043163797a601163899b120016f&folderId=db3a3043163797a6011638933eda014b Description: MOSFET N-CH 650V 34.6A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 21.9A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1.9mA
Supplier Device Package: PG-TO247-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
auf Bestellung 237 Stücke:
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2+19.92 EUR
30+11.79 EUR
120+10.01 EUR
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SPW47N60CFDFKSA1 SPW47N60CFDFKSA1 Infineon Technologies SPW47N60CFD_Rev.1.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c088f4655 Description: MOSFET N-CH 600V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 29A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.9mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 322 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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SPW52N50C3FKSA1 SPW52N50C3FKSA1 Infineon Technologies Infineon-SPW52N50C3-DS-v02_06-en.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a304340e762c80140f26ac8315ad4 Description: MOSFET N-CH 560V 52A TO247-3
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Drain to Source Voltage (Vdss): 560 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO247-3-1
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Power Dissipation (Max): 417W (Tc)
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SRF 55V02P C SRF 55V02P C Infineon Technologies SRF%2055V02P.pdf Description: IC EEPROM 2KBIT INTELLIG C-PAK
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: USB
Type: EEPROM
Operating Temperature: -25°C ~ 70°C
Standards: ISO 15693, ISO 18000-3
Supplier Device Package: Wafer
Produkt ist nicht verfügbar
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SRF 55V02P MCC2 SRF 55V02P MCC2 Infineon Technologies SRF%2055V02P.pdf Description: IC RFID TRANSP 13.56MHZ MCC2-2-1
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SRF 55V02P MFCC1 SRF 55V02P MFCC1 Infineon Technologies SRF%2055V02P.pdf Description: IC RFID TRANSP 13.56MHZ MCC2-2-1
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SRF 55V02P NB SRF 55V02P NB Infineon Technologies SRF%2055V02P.pdf Description: IC EEPROM 2KBIT INTELLIG WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: USB
Type: EEPROM
Operating Temperature: -25°C ~ 70°C
Standards: ISO 15693, ISO 18000-3
Supplier Device Package: Wafer
Produkt ist nicht verfügbar
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SRF 55V02P Y1/0 Infineon Technologies SRF%2055V02P.pdf Description: IC RFID TRANSP 13.56MHZ
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SRF 55V02S C SRF 55V02S C Infineon Technologies SRF_55V02S.pdf Description: IC EEPROM 2KBIT INTELLIG C-PAK
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: USB
Type: RFID Transponder
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 7V
Standards: ISO 15693, ISO 18000-3
Supplier Device Package: Wafer
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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SRF 55V02S MCC2 SRF 55V02S MCC2 Infineon Technologies SRF_55V02S.pdf Description: IC RFID TRANSP 13.56MHZ MCC2-2-1
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SRF 55V02S MFCC1 Infineon Technologies SRF_55V02S.pdf Description: IC RFID TRANSP 13.56MZ MFCC1-2-1
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SRF 55V02S NB Infineon Technologies SRF_55V02S.pdf Description: IC EEPROM 2KBIT INTELLIG WAFER
Part Status: Discontinued at Digi-Key
Supplier Device Package: Wafer
Standards: ISO 15693, ISO 18000-3
Voltage - Supply: 7V
Operating Temperature: -25°C ~ 70°C
Type: RFID Transponder
Interface: USB
Frequency: 13.56MHz
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SRF 55V02S Y1/0 Infineon Technologies SRF_55V02S.pdf Description: IC RFID TRANSP 13.56MHZ
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SRF 55V02S Y2/0 Infineon Technologies SRF_55V02S.pdf Description: IC RFID TRANSP 13.56MHZ
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SRF 55V10P C SRF 55V10P C Infineon Technologies SRF%2055V10P.pdf Description: IC EEPROM 10KBIT INTELLIG C-PAK
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: USB
Type: EEPROM
Operating Temperature: -25°C ~ 70°C
Standards: ISO 15693, ISO 18000-3
Supplier Device Package: Wafer
Produkt ist nicht verfügbar
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SRF 55V10P MCC2 SRF 55V10P MCC2 Infineon Technologies SRF%2055V10P.pdf Description: IC RFID TRANSP 13.56MHZ MCC2-2-1
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SRF 55V10P NB SRF 55V10P NB Infineon Technologies SRF%2055V10P.pdf Description: IC EEPROM 10KBIT INTELLIG WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: USB
Type: EEPROM
Operating Temperature: -25°C ~ 70°C
Standards: ISO 15693, ISO 18000-3
Supplier Device Package: Wafer
Produkt ist nicht verfügbar
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SRF 55V10S C Infineon Technologies SRF_55V10S.pdf Description: IC EEPROM 10KBIT INTELLIG C-PAK
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SRF 55V10S MCC2 SRF 55V10S MCC2 Infineon Technologies SRF_55V10S.pdf Description: IC RFID TRANSP 13.56MHZ MCC2-2-1
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SRF 55V10S MFCC1 Infineon Technologies SRF_55V10S.pdf Description: IC RFID TRANSP 13.56MZ MFCC1-2-1
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SRF 55V10S NB SRF 55V10S NB Infineon Technologies SRF_55V10S.pdf Description: IC EEPROM 10KBIT INTELLIG WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: USB
Type: RFID Transponder
Operating Temperature: -25°C ~ 70°C
Standards: ISO 15693, ISO 18000-3
Supplier Device Package: Wafer
Produkt ist nicht verfügbar
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SRF 55V10S Y1/0 Infineon Technologies SRF_55V10S.pdf Description: IC RFID TRANSP 13.56MHZ
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SRF 55V10S Y2/0 Infineon Technologies SRF_55V10S.pdf Description: IC RFID TRANSP 13.56MHZ
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SRF66V10ITNBF1SA1 Infineon Technologies Chip_Card_Security.pdf Description: IC EEPROM 10KBIT INTELLIG WAFER
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SRF 66V10ST NB Infineon Technologies Description: IC EEPROM 10KBIT INTELLIG WAFER
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TCA305GXLLA1 TCA305GXLLA1 Infineon Technologies tca305_green_050217.pdf?folderId=db3a304412b407950112b437b1f76884&fileId=db3a304412b407950112b437b27b6885 Description: IC PROXIMITY SWITCH PDSO-14
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TCA305GGEGXUMA1 TCA305GGEGXUMA1 Infineon Technologies Infineon-TCA305-DS-v01_01-en%5B1%5D.pdf?fileId=db3a304412b407950112b437b522688a Description: IC PROXIMITY SWITCH PDSO-14
DigiKey Programmable: Not Verified
Proximity Detection: Yes
Supplier Device Package: PG-DSO-14-1
Number of Inputs: 1
Current - Supply: 600µA
Voltage - Supply: 5V ~ 30V
Operating Temperature: -25°C ~ 85°C
Type: Proximity Only
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCA355GHLLA1 Infineon Technologies Infineon-TCA305-DS-v01_01-en%5B1%5D.pdf?fileId=db3a304412b407950112b437b522688a Description: IC PROXIMITY SWITCH 8DSO
DigiKey Programmable: Not Verified
Proximity Detection: Yes
Supplier Device Package: PG-DSO-8
Number of Inputs: 1
Current - Supply: 600µA
Voltage - Supply: 5V ~ 30V
Operating Temperature: -25°C ~ 85°C
Type: Proximity Only
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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TCA355GGEGHUMA1 Infineon Technologies Infineon-TCA305-DS-v01_01-en%5B1%5D.pdf?fileId=db3a304412b407950112b437b522688a Description: IC PROXIMITY SWITCH 8DSO
DigiKey Programmable: Not Verified
Proximity Detection: Yes
Supplier Device Package: PG-DSO-8
Number of Inputs: 1
Current - Supply: 600µA
Voltage - Supply: 5V ~ 30V
Operating Temperature: -25°C ~ 85°C
Type: Proximity Only
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCA3727NKLA1 TCA3727NKLA1 Infineon Technologies TCA3727.pdf Description: IC MTR DRV BIPOLR 4.5-6.5V 20DIP
Part Status: Obsolete
Step Resolution: 1, 1/2, 1/4
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: P-DIP-20-6
Voltage - Load: 5V ~ 50V
Technology: Bipolar
Applications: General Purpose
Voltage - Supply: 4.5V ~ 6.5V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 110°C (TA)
Interface: Parallel
Current - Output: 1A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Through Hole
Package / Case: 20-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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TCA3727GXUMA1 TCA3727GXUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC MTR DRV BIPOLR 4.5-6.5V 24DSO
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Step Resolution: 1, 1/2, 1/4
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: PG-DSO-24-3
Voltage - Load: 5V ~ 50V
Technology: Bipolar
Applications: General Purpose
Voltage - Supply: 4.5V ~ 6.5V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 110°C (TA)
Interface: Parallel
Current - Output: 1A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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TCA505BCHIPX1SA1 TCA505BCHIPX1SA1 Infineon Technologies TCA505BG.pdf Description: IC SWITCH PROXIMITY INDCT CHIP
DigiKey Programmable: Not Verified
Part Status: Discontinued at Digi-Key
Proximity Detection: Yes
Number of Inputs: 1
Current - Supply: 550µA
Voltage - Supply: 3.1V ~ 40V
Operating Temperature: -40°C ~ 110°C
Type: Proximity Only
Packaging: Bulk
Produkt ist nicht verfügbar
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SPP80N06S2-H5 SP%28P%2CB%2980N06S2-H5.pdf
SPP80N06S2-H5
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Produkt ist nicht verfügbar
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SPP80N06S2L-05 SP%28B%2CI%2CP%2980N06S2L-05.pdf
SPP80N06S2L-05
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7530 pF @ 25 V
Produkt ist nicht verfügbar
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SPP80N06S2L-06 SP%28B%2CP%2980N06S2L-06.pdf
SPP80N06S2L-06
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2V @ 180µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 69A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
Produkt ist nicht verfügbar
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SPP80N06S2L-07 SP%28P%2CB%2980N06S2L-07.pdf
SPP80N06S2L-07
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 4210 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2V @ 150µA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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SPP80N06S2L-09 SP%28B%2CP%2980N06S2L-09.pdf
SPP80N06S2L-09
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 52A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 2V @ 125µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 25 V
Produkt ist nicht verfügbar
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SPP80N06S2L-11 SP%28B%2CI%2CP%2980N06S2L-11.pdf
SPP80N06S2L-11
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2V @ 93µA
Power Dissipation (Max): 158W (Tc)
Produkt ist nicht verfügbar
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SPP80N06S2L-H5 SP%28P%2CB%2980N06S2L-H5.pdf
SPP80N06S2L-H5
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2V @ 230µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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SPP80N08S2-07 SP%28B%2CI%2CP%2980N08S2-07.pdf
SPP80N08S2-07
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 66A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6130 pF @ 25 V
Produkt ist nicht verfügbar
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SPP80N08S2L-07 SP%28B%2CP%29N08S2L-07.pdf
SPP80N08S2L-07
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 67A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
Produkt ist nicht verfügbar
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SPP80N10L SP%28I%2CP%2980N10L.pdf
SPP80N10L
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 58A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 25 V
Produkt ist nicht verfügbar
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SPU01N60C3BKMA1 SPD_U01N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e18974951
SPU01N60C3BKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 800MA TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 11W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO251-3-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Produkt ist nicht verfügbar
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SPU02N60S5BKMA1 SPD_U02N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c91374727
SPU02N60S5BKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 1.8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 80µA
Supplier Device Package: PG-TO251-3-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Produkt ist nicht verfügbar
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SPU03N60S5BKMA1 SPD_U03N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c8ab0471f
SPU03N60S5BKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 135µA
Supplier Device Package: PG-TO251-3-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Produkt ist nicht verfügbar
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SPU04N60C3BKMA1 Infineon-SPD_U04N60C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f1a0318e31921
SPU04N60C3BKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO251-3-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Produkt ist nicht verfügbar
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SPU04N60S5BKMA1 Infineon-SPD_U04N60S5-DS-v02_05-en.pdf?fileId=db3a304318f3fe29011908be09e029c0
SPU04N60S5BKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 200µA
Supplier Device Package: PG-TO251-3-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
Produkt ist nicht verfügbar
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SPU07N60C3BKMA1 Infineon-SPD_U07N60C3-DS-v02_07-en.pdf?fileId=db3a30433f1b26e8013f1e7536e102d4
SPU07N60C3BKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO251-3-21
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Produkt ist nicht verfügbar
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SPU07N60S5 SPD_U07N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c8df34723
SPU07N60S5
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 7.3A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3-21
Vgs(th) (Max) @ Id: 5.5V @ 350µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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SPU11N10 SPD_U11N10.pdf
SPU11N10
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 10.5A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: P-TO251-3-1
Vgs(th) (Max) @ Id: 4V @ 21µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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SPU18P06P fundamentals-of-power-semiconductors
SPU18P06P
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 18.6A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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SPU30N03S2-08 SPU30N03S2-08.pdf
SPU30N03S2-08
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: P-TO251-3-1
Vgs(th) (Max) @ Id: 4V @ 85µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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SPU30P06P SPD30P06P_310702.pdf
SPU30P06P
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 30A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 4V @ 1.7mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 21.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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SPW11N60C3FKSA1 SPW11N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d87b14893
SPW11N60C3FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
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SPW11N60CFDFKSA1 SPW11N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e5f1849b3
SPW11N60CFDFKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
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SPW11N60S5FKSA1 SPW11N60S5_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d68e0486f
SPW11N60S5FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 11A TO247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO247-3-1
Vgs(th) (Max) @ Id: 5.5V @ 500µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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SPW15N60C3FKSA1 fundamentals-of-power-semiconductors
SPW15N60C3FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 9.4A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 136 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.25 EUR
30+6.37 EUR
120+5.28 EUR
Mindestbestellmenge: 2 Stücke
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SPW17N80C3A SPW17N80C3.pdf
SPW17N80C3A
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO247-3-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 25 V
Produkt ist nicht verfügbar
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SPW20N60CFDFKSA1 SPW20N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c02c5464d
SPW20N60CFDFKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 20.7A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
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SPW24N60C3FKSA1 SPW24N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d61f14867
SPW24N60C3FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 24.3A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.3A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 15.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1.2mA
Supplier Device Package: PG-TO247-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Produkt ist nicht verfügbar
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SPW35N60C3FKSA1 SPW35N60C3_Rev%5B1%5D.2.5_PCN.pdf?fileId=db3a3043163797a601163899b120016f&folderId=db3a3043163797a6011638933eda014b
SPW35N60C3FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 34.6A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 21.9A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1.9mA
Supplier Device Package: PG-TO247-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
auf Bestellung 237 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+19.92 EUR
30+11.79 EUR
120+10.01 EUR
Mindestbestellmenge: 2 Stücke
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SPW47N60CFDFKSA1 SPW47N60CFD_Rev.1.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c088f4655
SPW47N60CFDFKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 29A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.9mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 322 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
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SPW52N50C3FKSA1 Infineon-SPW52N50C3-DS-v02_06-en.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a304340e762c80140f26ac8315ad4
SPW52N50C3FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 560V 52A TO247-3
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Drain to Source Voltage (Vdss): 560 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO247-3-1
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Power Dissipation (Max): 417W (Tc)
Produkt ist nicht verfügbar
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SRF 55V02P C SRF%2055V02P.pdf
SRF 55V02P C
Hersteller: Infineon Technologies
Description: IC EEPROM 2KBIT INTELLIG C-PAK
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: USB
Type: EEPROM
Operating Temperature: -25°C ~ 70°C
Standards: ISO 15693, ISO 18000-3
Supplier Device Package: Wafer
Produkt ist nicht verfügbar
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SRF 55V02P MCC2 SRF%2055V02P.pdf
SRF 55V02P MCC2
Hersteller: Infineon Technologies
Description: IC RFID TRANSP 13.56MHZ MCC2-2-1
Produkt ist nicht verfügbar
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SRF 55V02P MFCC1 SRF%2055V02P.pdf
SRF 55V02P MFCC1
Hersteller: Infineon Technologies
Description: IC RFID TRANSP 13.56MHZ MCC2-2-1
Produkt ist nicht verfügbar
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SRF 55V02P NB SRF%2055V02P.pdf
SRF 55V02P NB
Hersteller: Infineon Technologies
Description: IC EEPROM 2KBIT INTELLIG WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: USB
Type: EEPROM
Operating Temperature: -25°C ~ 70°C
Standards: ISO 15693, ISO 18000-3
Supplier Device Package: Wafer
Produkt ist nicht verfügbar
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SRF 55V02P Y1/0 SRF%2055V02P.pdf
Hersteller: Infineon Technologies
Description: IC RFID TRANSP 13.56MHZ
Produkt ist nicht verfügbar
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SRF 55V02S C SRF_55V02S.pdf
SRF 55V02S C
Hersteller: Infineon Technologies
Description: IC EEPROM 2KBIT INTELLIG C-PAK
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: USB
Type: RFID Transponder
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 7V
Standards: ISO 15693, ISO 18000-3
Supplier Device Package: Wafer
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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SRF 55V02S MCC2 SRF_55V02S.pdf
SRF 55V02S MCC2
Hersteller: Infineon Technologies
Description: IC RFID TRANSP 13.56MHZ MCC2-2-1
Produkt ist nicht verfügbar
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SRF 55V02S MFCC1 SRF_55V02S.pdf
Hersteller: Infineon Technologies
Description: IC RFID TRANSP 13.56MZ MFCC1-2-1
Produkt ist nicht verfügbar
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SRF 55V02S NB SRF_55V02S.pdf
Hersteller: Infineon Technologies
Description: IC EEPROM 2KBIT INTELLIG WAFER
Part Status: Discontinued at Digi-Key
Supplier Device Package: Wafer
Standards: ISO 15693, ISO 18000-3
Voltage - Supply: 7V
Operating Temperature: -25°C ~ 70°C
Type: RFID Transponder
Interface: USB
Frequency: 13.56MHz
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SRF 55V02S Y1/0 SRF_55V02S.pdf
Hersteller: Infineon Technologies
Description: IC RFID TRANSP 13.56MHZ
Produkt ist nicht verfügbar
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SRF 55V02S Y2/0 SRF_55V02S.pdf
Hersteller: Infineon Technologies
Description: IC RFID TRANSP 13.56MHZ
Produkt ist nicht verfügbar
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SRF 55V10P C SRF%2055V10P.pdf
SRF 55V10P C
Hersteller: Infineon Technologies
Description: IC EEPROM 10KBIT INTELLIG C-PAK
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: USB
Type: EEPROM
Operating Temperature: -25°C ~ 70°C
Standards: ISO 15693, ISO 18000-3
Supplier Device Package: Wafer
Produkt ist nicht verfügbar
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SRF 55V10P MCC2 SRF%2055V10P.pdf
SRF 55V10P MCC2
Hersteller: Infineon Technologies
Description: IC RFID TRANSP 13.56MHZ MCC2-2-1
Produkt ist nicht verfügbar
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SRF 55V10P NB SRF%2055V10P.pdf
SRF 55V10P NB
Hersteller: Infineon Technologies
Description: IC EEPROM 10KBIT INTELLIG WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: USB
Type: EEPROM
Operating Temperature: -25°C ~ 70°C
Standards: ISO 15693, ISO 18000-3
Supplier Device Package: Wafer
Produkt ist nicht verfügbar
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SRF 55V10S C SRF_55V10S.pdf
Hersteller: Infineon Technologies
Description: IC EEPROM 10KBIT INTELLIG C-PAK
Produkt ist nicht verfügbar
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SRF 55V10S MCC2 SRF_55V10S.pdf
SRF 55V10S MCC2
Hersteller: Infineon Technologies
Description: IC RFID TRANSP 13.56MHZ MCC2-2-1
Produkt ist nicht verfügbar
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SRF 55V10S MFCC1 SRF_55V10S.pdf
Hersteller: Infineon Technologies
Description: IC RFID TRANSP 13.56MZ MFCC1-2-1
Produkt ist nicht verfügbar
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SRF 55V10S NB SRF_55V10S.pdf
SRF 55V10S NB
Hersteller: Infineon Technologies
Description: IC EEPROM 10KBIT INTELLIG WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: USB
Type: RFID Transponder
Operating Temperature: -25°C ~ 70°C
Standards: ISO 15693, ISO 18000-3
Supplier Device Package: Wafer
Produkt ist nicht verfügbar
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SRF 55V10S Y1/0 SRF_55V10S.pdf
Hersteller: Infineon Technologies
Description: IC RFID TRANSP 13.56MHZ
Produkt ist nicht verfügbar
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SRF 55V10S Y2/0 SRF_55V10S.pdf
Hersteller: Infineon Technologies
Description: IC RFID TRANSP 13.56MHZ
Produkt ist nicht verfügbar
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SRF66V10ITNBF1SA1 Chip_Card_Security.pdf
Hersteller: Infineon Technologies
Description: IC EEPROM 10KBIT INTELLIG WAFER
Produkt ist nicht verfügbar
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SRF 66V10ST NB
Hersteller: Infineon Technologies
Description: IC EEPROM 10KBIT INTELLIG WAFER
Produkt ist nicht verfügbar
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TCA305GXLLA1 tca305_green_050217.pdf?folderId=db3a304412b407950112b437b1f76884&fileId=db3a304412b407950112b437b27b6885
TCA305GXLLA1
Hersteller: Infineon Technologies
Description: IC PROXIMITY SWITCH PDSO-14
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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TCA305GGEGXUMA1 Infineon-TCA305-DS-v01_01-en%5B1%5D.pdf?fileId=db3a304412b407950112b437b522688a
TCA305GGEGXUMA1
Hersteller: Infineon Technologies
Description: IC PROXIMITY SWITCH PDSO-14
DigiKey Programmable: Not Verified
Proximity Detection: Yes
Supplier Device Package: PG-DSO-14-1
Number of Inputs: 1
Current - Supply: 600µA
Voltage - Supply: 5V ~ 30V
Operating Temperature: -25°C ~ 85°C
Type: Proximity Only
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCA355GHLLA1 Infineon-TCA305-DS-v01_01-en%5B1%5D.pdf?fileId=db3a304412b407950112b437b522688a
Hersteller: Infineon Technologies
Description: IC PROXIMITY SWITCH 8DSO
DigiKey Programmable: Not Verified
Proximity Detection: Yes
Supplier Device Package: PG-DSO-8
Number of Inputs: 1
Current - Supply: 600µA
Voltage - Supply: 5V ~ 30V
Operating Temperature: -25°C ~ 85°C
Type: Proximity Only
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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TCA355GGEGHUMA1 Infineon-TCA305-DS-v01_01-en%5B1%5D.pdf?fileId=db3a304412b407950112b437b522688a
Hersteller: Infineon Technologies
Description: IC PROXIMITY SWITCH 8DSO
DigiKey Programmable: Not Verified
Proximity Detection: Yes
Supplier Device Package: PG-DSO-8
Number of Inputs: 1
Current - Supply: 600µA
Voltage - Supply: 5V ~ 30V
Operating Temperature: -25°C ~ 85°C
Type: Proximity Only
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCA3727NKLA1 TCA3727.pdf
TCA3727NKLA1
Hersteller: Infineon Technologies
Description: IC MTR DRV BIPOLR 4.5-6.5V 20DIP
Part Status: Obsolete
Step Resolution: 1, 1/2, 1/4
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: P-DIP-20-6
Voltage - Load: 5V ~ 50V
Technology: Bipolar
Applications: General Purpose
Voltage - Supply: 4.5V ~ 6.5V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 110°C (TA)
Interface: Parallel
Current - Output: 1A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Through Hole
Package / Case: 20-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 720 Stücke
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TCA3727GXUMA1 fundamentals-of-power-semiconductors
TCA3727GXUMA1
Hersteller: Infineon Technologies
Description: IC MTR DRV BIPOLR 4.5-6.5V 24DSO
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Step Resolution: 1, 1/2, 1/4
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: PG-DSO-24-3
Voltage - Load: 5V ~ 50V
Technology: Bipolar
Applications: General Purpose
Voltage - Supply: 4.5V ~ 6.5V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 110°C (TA)
Interface: Parallel
Current - Output: 1A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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TCA505BCHIPX1SA1 TCA505BG.pdf
TCA505BCHIPX1SA1
Hersteller: Infineon Technologies
Description: IC SWITCH PROXIMITY INDCT CHIP
DigiKey Programmable: Not Verified
Part Status: Discontinued at Digi-Key
Proximity Detection: Yes
Number of Inputs: 1
Current - Supply: 550µA
Voltage - Supply: 3.1V ~ 40V
Operating Temperature: -40°C ~ 110°C
Type: Proximity Only
Packaging: Bulk
Produkt ist nicht verfügbar
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