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IPB110N06L G IPB110N06L G Infineon Technologies IP%28B%2CP%29110N06L_G.pdf Description: MOSFET N-CH 60V 78A TO-263
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2V @ 94µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 78A, 10V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPB13N03LB G IPB13N03LB G Infineon Technologies IPB13N03LB_Rev0.93_G.pdf Description: MOSFET N-CH 30V 30A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1355 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPB80N06S3L-05 IPB80N06S3L-05 Infineon Technologies IPB(I,P)N06S3L-05.pdf Description: MOSFET N-CH 55V 80A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 13060 pF @ 25 V
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2.2V @ 115µA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 69A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar
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IPB80N06S3L-06 IPB80N06S3L-06 Infineon Technologies IPB(I,P)80N06S3L-06.pdf Description: MOSFET N-CH 55V 80A TO263-3
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 56A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 9417 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2.2V @ 80µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPBH6N03LA G IPBH6N03LA G Infineon Technologies IPBH6N03LAG_Rev1.2.pdf Description: MOSFET N-CH 25V 50A TO-263
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IPD04N03LB G IPD04N03LB G Infineon Technologies IP%28D%2CF%2CS%2CU%2904N03LB_G.pdf Description: MOSFET N-CH 30V 50A TO252-3
Vgs(th) (Max) @ Id: 2V @ 70µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3-11
Produkt ist nicht verfügbar
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IPD127N06LGBTMA1 IPD127N06LGBTMA1 Infineon Technologies IPD127N06LG%2BRev1.2.pdf?fileId=db3a30431f848401011fc786d4077a24&folderId=db3a30431a5c32f2011a809773886508 Description: MOSFET N-CH 60V 50A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 2V @ 80µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 12.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPD12N03LB G IPD12N03LB G Infineon Technologies ipd12n03lb_v1.6_g.pdf Description: MOSFET N-CH 30V 30A TO252-3
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SMBT 3904 B5003 SMBT 3904 B5003 Infineon Technologies smbt3904series_mmbt3904.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d0114460005c10191 Description: TRANS NPN 40V 0.2A PG-SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SMBT 3906 B5003 SMBT 3906 B5003 Infineon Technologies smbt3906series_mmbt3906.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d01144604610f0192 Description: TRANS PNP 40V 0.2A PG-SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Packaging: Cut Tape (CT)
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar
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SN7002N L6327 SN7002N L6327 Infineon Technologies SN7002N.pdf Description: MOSFET N-CH 60V 200MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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SN7002W E6327 SN7002W E6327 Infineon Technologies SN7002W_Rev2.5_pdf%5B1%5D.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a3043344adb9d0134569a59ab6195&ack=t Description: MOSFET N-CH 60V 230MA SOT323-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT323
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Rds On (Max) @ Id, Vgs: 5Ohm @ 230mA, 10V
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Power Dissipation (Max): 500mW (Ta)
Produkt ist nicht verfügbar
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SPB02N60S5ATMA1 SPB02N60S5ATMA1 Infineon Technologies SPB02N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c983b4732 Description: MOSFET N-CH 600V 1.8A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 5.5V @ 80µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 87 Stücke:
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15+1.46 EUR
19+1.14 EUR
Mindestbestellmenge: 15 Stücke
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SPB18P06PGATMA1 SPB18P06PGATMA1 Infineon Technologies SPB18P06P_Rev1.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42bd62a460d Description: MOSFET P-CH 60V 18.7A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 81.1W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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7+3.12 EUR
11+1.98 EUR
100+1.32 EUR
500+1.05 EUR
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SPB21N50C3ATMA1 SPB21N50C3ATMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 560V 21A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 2434 Stücke:
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3+9.01 EUR
10+5.96 EUR
100+4.22 EUR
500+3.67 EUR
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SPB80P06PGATMA1 SPB80P06PGATMA1 Infineon Technologies SPB80P06P+G_Rev+1.6_.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42add964408 Description: MOSFET P-CH 60V 80A TO263-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5033 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 5.5mA
Power Dissipation (Max): 340W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 64A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 3261 Stücke:
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3+8.85 EUR
10+5.93 EUR
100+4.2 EUR
500+3.45 EUR
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SPD01N60C3BTMA1 SPD01N60C3BTMA1 Infineon Technologies SPD_U01N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e18974951 Description: MOSFET N-CH 650V 800MA TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 11W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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SPD07N20 SPD07N20 Infineon Technologies SPD_07N20.pdf Description: MOSFET N-CH 200V 7A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SPD18P06P SPD18P06P Infineon Technologies SPD18P06P_Rev.3.4_.pdf?folderId=db3a30431ed1d7b2011f4042f2ff4ec5&fileId=db3a30431ed1d7b2011f404c85eb4ee3 Description: MOSFET P-CH 60V 18.6A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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SPD50P03LGBTMA1 SPD50P03LGBTMA1 Infineon Technologies SPD50P03LG_Rev+1.8.pdf?folderId=db3a304314dca38901154a7313d21a66&fileId=db3a3043156fd5730115c75829fc0ffa Description: MOSFET P-CH 30V 50A TO252-5
Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-5
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 2985 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.18 EUR
10+4.02 EUR
100+2.78 EUR
500+2.25 EUR
1000+2.08 EUR
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BAS 70 B5003 BAS 70 B5003 Infineon Technologies bas70_bas170series.pdf?folderId=db3a30431400ef68011425f1ca2505e3&fileId=db3a304314dca389011518ad41680e12 Description: DIODE SCHOTTKY 70V 70MA SOT23-3
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BAT 54-04 B5003 BAT 54-04 B5003 Infineon Technologies BAT54_Series.pdf Description: DIODE ARRAY SCHOTTKY 30V SOT23
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BAT 54-05 B5003 BAT 54-05 B5003 Infineon Technologies BAT54_Series.pdf Description: DIODE ARRAY SCHOTTKY 30V SOT23
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BFR 705L3RH E6327 BFR 705L3RH E6327 Infineon Technologies BFR705L3RH.pdf Description: TRANS RF BIPO NPN 10MA TSLP-3-9
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IPBH6N03LA G IPBH6N03LA G Infineon Technologies IPBH6N03LAG_Rev1.2.pdf Description: MOSFET N-CH 25V 50A TO-263
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SPB80P06P G SPB80P06P G Infineon Technologies SPP80P06P_Rev1.2.pdf?folderId=db3a304412b407950112b42bb37a45e5&fileId=db3a304412b407950112b42bb3e945e6&location=.en.product.findProductTypeByName.html_dgdl_SPP80P06P_Rev1.2.pdf Description: MOSFET P-CH 60V 80A TO-263
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IRF1324S-7PPBF IRF1324S-7PPBF Infineon Technologies irf1324s-7ppbf.pdf?fileId=5546d462533600a4015355dad16e18a9 Description: MOSFET N-CH 24V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 19 V
Produkt ist nicht verfügbar
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IRFSL3207ZPBF IRFSL3207ZPBF Infineon Technologies irfs3207zpbf.pdf?fileId=5546d462533600a40153563679b62161 Description: MOSFET N-CH 75V 120A TO262
Input Capacitance (Ciss) (Max) @ Vds: 6920 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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100+3.17 EUR
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IRGP4068D-EPBF IRGP4068D-EPBF Infineon Technologies irgp4068dpbf.pdf?fileId=5546d462533600a4015356560fc12458 Description: IGBT TRENCH 600V 96A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: -/145ns
Switching Energy: 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
Produkt ist nicht verfügbar
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IRGP4068DPBF IRGP4068DPBF Infineon Technologies irgp4068dpbf.pdf?fileId=5546d462533600a4015356560fc12458 Description: IGBT TRENCH 600V 96A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: -/145ns
Switching Energy: 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
Produkt ist nicht verfügbar
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IRGS4055PBF IRGS4055PBF Infineon Technologies irgb4055pbf.pdf Description: IGBT 300V 110A 255W D2PAK
Power - Max: 255 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 110 A
Gate Charge: 132 nC
Test Condition: 180V, 35A, 10Ohm
Td (on/off) @ 25°C: 44ns/245ns
IGBT Type: Trench
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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IRGS4065PBF IRGS4065PBF Infineon Technologies irgb4065pbf.pdf Description: IGBT 300V 70A 178W D2PAK
Power - Max: 178 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 70 A
Gate Charge: 62 nC
Test Condition: 180V, 25A, 10Ohm
Td (on/off) @ 25°C: 30ns/170ns
IGBT Type: Trench
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 70A
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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IR1167BSPBF IR1167BSPBF Infineon Technologies ir1167aspbf.pdf?fileId=5546d462533600a4015355c45d9c1655 Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 12V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 18ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2V, 2.15V
Current - Peak Output (Source, Sink): 2A, 7A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IRFP4321PBF IRFP4321PBF Infineon Technologies irfp4321pbf.pdf?fileId=5546d462533600a40153562c4f802011 Description: MOSFET N-CH 150V 78A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 33A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 25 V
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500+3.42 EUR
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IRS2166DPBF IRS2166DPBF Infineon Technologies IRS2166D%28S%29PbF.pdf Description: IC PFC/BALLAST CNTRL 46KHZ 16DIP
Operating Temperature: -25°C ~ 125°C
Type: PFC/Ballast Controller
Frequency: 40kHz ~ 46kHz
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Current - Supply: 20 mA
Dimming: No
Supplier Device Package: 16-DIP
Voltage - Supply: 11.5V ~ 16.6V
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IRGP4055DPBF IRGP4055DPBF Infineon Technologies irgp4055dpbf.pdf Description: IGBT 300V 110A 255W TO247AC
Power - Max: 255 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 110 A
Part Status: Obsolete
Gate Charge: 132 nC
Td (on/off) @ 25°C: 44ns/245ns
IGBT Type: Trench
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Reverse Recovery Time (trr): 27 ns
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bag
Produkt ist nicht verfügbar
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IRGP4063DPBF IRGP4063DPBF Infineon Technologies IRGP4063D%28-E%29PbF.pdf Description: IGBT TRENCH 600V 96A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
Produkt ist nicht verfügbar
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IRGP4065DPBF IRGP4065DPBF Infineon Technologies irgp4065dpbf.pdf Description: IGBT 300V 70A 160W TO247AC
Produkt ist nicht verfügbar
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IRS2004STRPBF IRS2004STRPBF Infineon Technologies irs2004pbf.pdf?fileId=5546d462533600a401535675b86b2782 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Part Status: Not For New Designs
Current - Peak Output (Source, Sink): 290mA, 600mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 70ns, 35ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 200 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
DigiKey Programmable: Not Verified
Packaging: Cut Tape (CT)
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13+1.62 EUR
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100+1.29 EUR
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1000+1.12 EUR
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IRS21531DSTRPBF IRS21531DSTRPBF Infineon Technologies IRSDS08244-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.4V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
Part Status: Active
DigiKey Programmable: Not Verified
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IRS2003STRPBF IRS2003STRPBF Infineon Technologies irs2003pbf.pdf?fileId=5546d462533600a401535675afec2780 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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IRS2181STRPBF IRS2181STRPBF Infineon Technologies INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
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IRS21864STRPBF IRS21864STRPBF Infineon Technologies infineon-2ed2182-4-s06f-j-datasheet-en.pdf Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 22ns, 18ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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IRF6623TR1PBF IRF6623TR1PBF Infineon Technologies irf6623pbf.pdf?fileId=5546d462533600a4015355e8aa811a2d Description: MOSFET N-CH 20V 16A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ ST
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.4W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric ST
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IRS2186STRPBF IRS2186STRPBF Infineon Technologies irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 22ns, 18ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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IR1166STRPBF IR1166STRPBF Infineon Technologies IR1166SPbF.pdf Description: IC GATE DRVR LOW-SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 1A, 4A
Logic Voltage - VIL, VIH: 2V, 2.15V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 21ns, 10ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 11.4V ~ 18V
Operating Temperature: -25°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRS21864STRPBF IRS21864STRPBF Infineon Technologies infineon-2ed2182-4-s06f-j-datasheet-en.pdf Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 22ns, 18ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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IRS2186STRPBF IRS2186STRPBF Infineon Technologies irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 22ns, 18ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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2500+2.06 EUR
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IRS2003STRPBF IRS2003STRPBF Infineon Technologies irs2003pbf.pdf?fileId=5546d462533600a401535675afec2780 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRS2181STRPBF IRS2181STRPBF Infineon Technologies INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
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IRS2004STRPBF IRS2004STRPBF Infineon Technologies irs2004pbf.pdf?fileId=5546d462533600a401535675b86b2782 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Rise / Fall Time (Typ): 70ns, 35ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 200 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Part Status: Not For New Designs
Current - Peak Output (Source, Sink): 290mA, 600mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
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IRS21531DSTRPBF IRS21531DSTRPBF Infineon Technologies IRSDS08244-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.4V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
Part Status: Active
DigiKey Programmable: Not Verified
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IRS21851STRPBF IRS21851STRPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HIGH-SIDE 8SOIC
Voltage - Supply: 10V ~ 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Current - Peak Output (Source, Sink): 4A, 4A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
DigiKey Programmable: Not Verified
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IRS2541STRPBF IRS2541STRPBF Infineon Technologies IRS254%280%2C1%29%28S%29PbF.pdf Description: IC LED DRIVER CTRLR PWM 8SOIC
Voltage - Supply (Max): 15.6V
Voltage - Supply (Min): 9V
Dimming: PWM
Supplier Device Package: 8-SOIC
Topology: Step-Down (Buck)
Internal Switch(s): No
Frequency: 500kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Operating Temperature: -25°C ~ 150°C (TJ)
Type: DC DC Controller
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IRS2001STRPBF IRS2001STRPBF Infineon Technologies irs2001pbf.pdf?fileId=5546d462533600a401535675a760277e Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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IRF6622TR1PBF IRF6622TR1PBF Infineon Technologies IRF6622%28TR%29PbF.pdf Description: MOSFET N-CH 25V 15A DIRECTFET
Power Dissipation (Max): 2.2W (Ta), 34W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric SQ
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 13 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ SQ
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Produkt ist nicht verfügbar
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IRF6641TR1PBF IRF6641TR1PBF Infineon Technologies irf6641pbf.pdf?fileId=5546d462533600a4015355ec30311a49 Description: MOSFET N-CH 200V 4.6A DIRECTFET
Package / Case: DirectFET™ Isometric MZ
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DIRECTFET™ MZ
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 59.9mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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IRF6623TR1PBF IRF6623TR1PBF Infineon Technologies irf6623pbf.pdf?fileId=5546d462533600a4015355e8aa811a2d Description: MOSFET N-CH 20V 16A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ ST
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.4W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric ST
Packaging: Tape & Reel (TR)
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IRFB4321PBF IRFB4321PBF Infineon Technologies infineon-irfb4321-datasheet-en.pdf description Description: MOSFET N-CH 150V 85A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 33A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 50 V
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10+5.71 EUR
100+4.05 EUR
500+3.33 EUR
1000+3.09 EUR
2000+2.9 EUR
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IRFB3307ZPBF IRFB3307ZPBF Infineon Technologies irfs3307zpbf.pdf?fileId=5546d462533600a40153563691d7216c Description: MOSFET N-CH 75V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 50 V
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IPB110N06L G IP%28B%2CP%29110N06L_G.pdf
IPB110N06L G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 78A TO-263
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2V @ 94µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 78A, 10V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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IPB13N03LB G IPB13N03LB_Rev0.93_G.pdf
IPB13N03LB G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 30A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1355 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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IPB80N06S3L-05 IPB(I,P)N06S3L-05.pdf
IPB80N06S3L-05
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 13060 pF @ 25 V
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2.2V @ 115µA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 69A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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IPB80N06S3L-06 IPB(I,P)80N06S3L-06.pdf
IPB80N06S3L-06
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 56A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 9417 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2.2V @ 80µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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IPBH6N03LA G IPBH6N03LAG_Rev1.2.pdf
IPBH6N03LA G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO-263
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IPD04N03LB G IP%28D%2CF%2CS%2CU%2904N03LB_G.pdf
IPD04N03LB G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Vgs(th) (Max) @ Id: 2V @ 70µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3-11
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IPD127N06LGBTMA1 IPD127N06LG%2BRev1.2.pdf?fileId=db3a30431f848401011fc786d4077a24&folderId=db3a30431a5c32f2011a809773886508
IPD127N06LGBTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 2V @ 80µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 12.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPD12N03LB G ipd12n03lb_v1.6_g.pdf
IPD12N03LB G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO252-3
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SMBT 3904 B5003 smbt3904series_mmbt3904.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d0114460005c10191
SMBT 3904 B5003
Hersteller: Infineon Technologies
Description: TRANS NPN 40V 0.2A PG-SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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SMBT 3906 B5003 smbt3906series_mmbt3906.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d01144604610f0192
SMBT 3906 B5003
Hersteller: Infineon Technologies
Description: TRANS PNP 40V 0.2A PG-SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Packaging: Cut Tape (CT)
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
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SN7002N L6327 SN7002N.pdf
SN7002N L6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 200MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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SN7002W E6327 SN7002W_Rev2.5_pdf%5B1%5D.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a3043344adb9d0134569a59ab6195&ack=t
SN7002W E6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 230MA SOT323-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT323
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Rds On (Max) @ Id, Vgs: 5Ohm @ 230mA, 10V
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Power Dissipation (Max): 500mW (Ta)
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SPB02N60S5ATMA1 SPB02N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c983b4732
SPB02N60S5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 1.8A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 5.5V @ 80µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 87 Stücke:
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AnzahlPrivatkunde
15+1.46 EUR
19+1.14 EUR
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SPB18P06PGATMA1 SPB18P06P_Rev1.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42bd62a460d
SPB18P06PGATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 18.7A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 81.1W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 2333 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.12 EUR
11+1.98 EUR
100+1.32 EUR
500+1.05 EUR
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SPB21N50C3ATMA1 fundamentals-of-power-semiconductors
SPB21N50C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 560V 21A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 2434 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.01 EUR
10+5.96 EUR
100+4.22 EUR
500+3.67 EUR
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SPB80P06PGATMA1 SPB80P06P+G_Rev+1.6_.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42add964408
SPB80P06PGATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 80A TO263-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5033 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 5.5mA
Power Dissipation (Max): 340W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 64A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 3261 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.85 EUR
10+5.93 EUR
100+4.2 EUR
500+3.45 EUR
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SPD01N60C3BTMA1 SPD_U01N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e18974951
SPD01N60C3BTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 800MA TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 11W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SPD07N20 SPD_07N20.pdf
SPD07N20
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 7A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SPD18P06P SPD18P06P_Rev.3.4_.pdf?folderId=db3a30431ed1d7b2011f4042f2ff4ec5&fileId=db3a30431ed1d7b2011f404c85eb4ee3
SPD18P06P
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 18.6A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SPD50P03LGBTMA1 SPD50P03LG_Rev+1.8.pdf?folderId=db3a304314dca38901154a7313d21a66&fileId=db3a3043156fd5730115c75829fc0ffa
SPD50P03LGBTMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 50A TO252-5
Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-5
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 2985 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.18 EUR
10+4.02 EUR
100+2.78 EUR
500+2.25 EUR
1000+2.08 EUR
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BAS 70 B5003 bas70_bas170series.pdf?folderId=db3a30431400ef68011425f1ca2505e3&fileId=db3a304314dca389011518ad41680e12
BAS 70 B5003
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 70V 70MA SOT23-3
Produkt ist nicht verfügbar
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BAT 54-04 B5003 BAT54_Series.pdf
BAT 54-04 B5003
Hersteller: Infineon Technologies
Description: DIODE ARRAY SCHOTTKY 30V SOT23
Produkt ist nicht verfügbar
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BAT 54-05 B5003 BAT54_Series.pdf
BAT 54-05 B5003
Hersteller: Infineon Technologies
Description: DIODE ARRAY SCHOTTKY 30V SOT23
Produkt ist nicht verfügbar
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BFR 705L3RH E6327 BFR705L3RH.pdf
BFR 705L3RH E6327
Hersteller: Infineon Technologies
Description: TRANS RF BIPO NPN 10MA TSLP-3-9
Produkt ist nicht verfügbar
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IPBH6N03LA G IPBH6N03LAG_Rev1.2.pdf
IPBH6N03LA G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO-263
Produkt ist nicht verfügbar
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SPB80P06P G SPP80P06P_Rev1.2.pdf?folderId=db3a304412b407950112b42bb37a45e5&fileId=db3a304412b407950112b42bb3e945e6&location=.en.product.findProductTypeByName.html_dgdl_SPP80P06P_Rev1.2.pdf
SPB80P06P G
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 80A TO-263
auf Bestellung 7616 Stücke:
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IRF1324S-7PPBF irf1324s-7ppbf.pdf?fileId=5546d462533600a4015355dad16e18a9
IRF1324S-7PPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 24V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 19 V
Produkt ist nicht verfügbar
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IRFSL3207ZPBF irfs3207zpbf.pdf?fileId=5546d462533600a40153563679b62161
IRFSL3207ZPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 120A TO262
Input Capacitance (Ciss) (Max) @ Vds: 6920 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
auf Bestellung 880 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.65 EUR
50+3.69 EUR
100+3.17 EUR
500+3.09 EUR
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IRGP4068D-EPBF irgp4068dpbf.pdf?fileId=5546d462533600a4015356560fc12458
IRGP4068D-EPBF
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 96A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: -/145ns
Switching Energy: 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
Produkt ist nicht verfügbar
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IRGP4068DPBF irgp4068dpbf.pdf?fileId=5546d462533600a4015356560fc12458
IRGP4068DPBF
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 96A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: -/145ns
Switching Energy: 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
Produkt ist nicht verfügbar
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IRGS4055PBF irgb4055pbf.pdf
IRGS4055PBF
Hersteller: Infineon Technologies
Description: IGBT 300V 110A 255W D2PAK
Power - Max: 255 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 110 A
Gate Charge: 132 nC
Test Condition: 180V, 35A, 10Ohm
Td (on/off) @ 25°C: 44ns/245ns
IGBT Type: Trench
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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IRGS4065PBF irgb4065pbf.pdf
IRGS4065PBF
Hersteller: Infineon Technologies
Description: IGBT 300V 70A 178W D2PAK
Power - Max: 178 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 70 A
Gate Charge: 62 nC
Test Condition: 180V, 25A, 10Ohm
Td (on/off) @ 25°C: 30ns/170ns
IGBT Type: Trench
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 70A
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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IR1167BSPBF ir1167aspbf.pdf?fileId=5546d462533600a4015355c45d9c1655
IR1167BSPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 12V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 18ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2V, 2.15V
Current - Peak Output (Source, Sink): 2A, 7A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFP4321PBF irfp4321pbf.pdf?fileId=5546d462533600a40153562c4f802011
IRFP4321PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 78A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 33A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 25 V
auf Bestellung 3476 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.64 EUR
25+4.34 EUR
100+3.72 EUR
500+3.42 EUR
1000+3.28 EUR
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IRS2166DPBF IRS2166D%28S%29PbF.pdf
IRS2166DPBF
Hersteller: Infineon Technologies
Description: IC PFC/BALLAST CNTRL 46KHZ 16DIP
Operating Temperature: -25°C ~ 125°C
Type: PFC/Ballast Controller
Frequency: 40kHz ~ 46kHz
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Current - Supply: 20 mA
Dimming: No
Supplier Device Package: 16-DIP
Voltage - Supply: 11.5V ~ 16.6V
Produkt ist nicht verfügbar
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IRGP4055DPBF irgp4055dpbf.pdf
IRGP4055DPBF
Hersteller: Infineon Technologies
Description: IGBT 300V 110A 255W TO247AC
Power - Max: 255 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 110 A
Part Status: Obsolete
Gate Charge: 132 nC
Td (on/off) @ 25°C: 44ns/245ns
IGBT Type: Trench
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Reverse Recovery Time (trr): 27 ns
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bag
Produkt ist nicht verfügbar
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IRGP4063DPBF IRGP4063D%28-E%29PbF.pdf
IRGP4063DPBF
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 96A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
Produkt ist nicht verfügbar
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IRGP4065DPBF irgp4065dpbf.pdf
IRGP4065DPBF
Hersteller: Infineon Technologies
Description: IGBT 300V 70A 160W TO247AC
Produkt ist nicht verfügbar
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IRS2004STRPBF irs2004pbf.pdf?fileId=5546d462533600a401535675b86b2782
IRS2004STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Part Status: Not For New Designs
Current - Peak Output (Source, Sink): 290mA, 600mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 70ns, 35ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 200 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
DigiKey Programmable: Not Verified
Packaging: Cut Tape (CT)
auf Bestellung 5101 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.23 EUR
13+1.62 EUR
25+1.46 EUR
100+1.29 EUR
250+1.21 EUR
500+1.17 EUR
1000+1.12 EUR
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IRS21531DSTRPBF IRSDS08244-1.pdf?t.download=true&u=5oefqw
IRS21531DSTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.4V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1244 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.53 EUR
12+1.84 EUR
25+1.68 EUR
100+1.49 EUR
250+1.39 EUR
500+1.33 EUR
1000+1.32 EUR
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IRS2003STRPBF irs2003pbf.pdf?fileId=5546d462533600a401535675afec2780
IRS2003STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
auf Bestellung 1151 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.68 EUR
11+1.94 EUR
25+1.75 EUR
100+1.55 EUR
250+1.45 EUR
500+1.39 EUR
1000+1.34 EUR
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IRS2181STRPBF INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw
IRS2181STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 5645 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.69 EUR
10+2.71 EUR
25+2.48 EUR
100+2.21 EUR
250+2.08 EUR
500+2.01 EUR
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IRS21864STRPBF infineon-2ed2182-4-s06f-j-datasheet-en.pdf
IRS21864STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 22ns, 18ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 4028 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.82 EUR
10+3.58 EUR
25+3.27 EUR
100+2.94 EUR
250+2.77 EUR
500+2.71 EUR
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IRF6623TR1PBF irf6623pbf.pdf?fileId=5546d462533600a4015355e8aa811a2d
IRF6623TR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 16A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ ST
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.4W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric ST
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IRS2186STRPBF irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed
IRS2186STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 22ns, 18ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 7611 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.02 EUR
10+2.98 EUR
25+2.71 EUR
100+2.43 EUR
250+2.28 EUR
500+2.21 EUR
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IR1166STRPBF IR1166SPbF.pdf
IR1166STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 1A, 4A
Logic Voltage - VIL, VIH: 2V, 2.15V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 21ns, 10ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 11.4V ~ 18V
Operating Temperature: -25°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRS21864STRPBF infineon-2ed2182-4-s06f-j-datasheet-en.pdf
IRS21864STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 22ns, 18ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+2.51 EUR
Mindestbestellmenge: 2500 Stücke
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IRS2186STRPBF irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed
IRS2186STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 22ns, 18ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+2.06 EUR
Mindestbestellmenge: 2500 Stücke
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IRS2003STRPBF irs2003pbf.pdf?fileId=5546d462533600a401535675afec2780
IRS2003STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IRS2181STRPBF INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw
IRS2181STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.88 EUR
Mindestbestellmenge: 2500 Stücke
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IRS2004STRPBF irs2004pbf.pdf?fileId=5546d462533600a401535675b86b2782
IRS2004STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Rise / Fall Time (Typ): 70ns, 35ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 200 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Part Status: Not For New Designs
Current - Peak Output (Source, Sink): 290mA, 600mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.08 EUR
Mindestbestellmenge: 2500 Stücke
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IRS21531DSTRPBF IRSDS08244-1.pdf?t.download=true&u=5oefqw
IRS21531DSTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.4V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRS21851STRPBF fundamentals-of-power-semiconductors
IRS21851STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Voltage - Supply: 10V ~ 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Current - Peak Output (Source, Sink): 4A, 4A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRS2541STRPBF IRS254%280%2C1%29%28S%29PbF.pdf
IRS2541STRPBF
Hersteller: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM 8SOIC
Voltage - Supply (Max): 15.6V
Voltage - Supply (Min): 9V
Dimming: PWM
Supplier Device Package: 8-SOIC
Topology: Step-Down (Buck)
Internal Switch(s): No
Frequency: 500kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Operating Temperature: -25°C ~ 150°C (TJ)
Type: DC DC Controller
Produkt ist nicht verfügbar
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IRS2001STRPBF irs2001pbf.pdf?fileId=5546d462533600a401535675a760277e
IRS2001STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IRF6622TR1PBF IRF6622%28TR%29PbF.pdf
IRF6622TR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 15A DIRECTFET
Power Dissipation (Max): 2.2W (Ta), 34W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric SQ
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 13 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ SQ
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Produkt ist nicht verfügbar
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IRF6641TR1PBF irf6641pbf.pdf?fileId=5546d462533600a4015355ec30311a49
IRF6641TR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 4.6A DIRECTFET
Package / Case: DirectFET™ Isometric MZ
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DIRECTFET™ MZ
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 59.9mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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IRF6623TR1PBF irf6623pbf.pdf?fileId=5546d462533600a4015355e8aa811a2d
IRF6623TR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 16A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ ST
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.4W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric ST
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRFB4321PBF description infineon-irfb4321-datasheet-en.pdf
IRFB4321PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 85A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 33A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.68 EUR
10+5.71 EUR
100+4.05 EUR
500+3.33 EUR
1000+3.09 EUR
2000+2.9 EUR
Mindestbestellmenge: 3 Stücke
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IRFB3307ZPBF irfs3307zpbf.pdf?fileId=5546d462533600a40153563691d7216c
IRFB3307ZPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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