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APT15D100BCTG APT15D100BCTG Microchip Technology 5745-apt15d100bctg-datasheet Description: DIODE ARRAY GP 1000V 15A TO247
Produkt ist nicht verfügbar
APT15D100BG APT15D100BG Microchip Technology 5744-apt15d100bg-datasheet Description: DIODE GEN PURP 1KV 15A TO247
auf Bestellung 288 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.99 EUR
100+ 6.46 EUR
Mindestbestellmenge: 4
APT15D100BHBG APT15D100BHBG Microchip Technology 5746-apt15d100bhbg-datasheet Description: DIODE ARRAY GP 1000V 15A TO247
Produkt ist nicht verfügbar
APT15D100KG APT15D100KG Microchip Technology index.php?option=com_docman&task=doc_download&gid=6637 Description: DIODE GEN PURP 1KV 15A TO220
auf Bestellung 175 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.62 EUR
100+ 5.15 EUR
Mindestbestellmenge: 5
APT15D120KG APT15D120KG Microchip Technology 123643-apt15d120kg-datasheet Description: DIODE GP 1.2KV 15A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 260 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
auf Bestellung 255 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.23 EUR
100+ 4.23 EUR
Mindestbestellmenge: 5
APT15D40BCTG APT15D40BCTG Microchip Technology 123678-apt15d40bctg-datasheet Description: DIODE ARRAY GP 400V 15A TO247
Produkt ist nicht verfügbar
APT15D40KG APT15D40KG Microchip Technology 123796-apt15d40kg-datasheet Description: DIODE GEN PURP 400V 15A TO220-2
Produkt ist nicht verfügbar
APT15D60BCAG APT15D60BCAG Microchip Technology 5754-apt15d60bcag-datasheet Description: DIODE ARRAY GP 600V 14A TO247
Produkt ist nicht verfügbar
APT15D60BCTG APT15D60BCTG Microchip Technology 5755-apt15d60bctg-datasheet Description: DIODE ARRAY GP 600V 15A TO247
Produkt ist nicht verfügbar
APT15D60BG APT15D60BG Microchip Technology 5753-apt15d60bg-datasheet Description: DIODE GEN PURP 600V 15A TO247
Produkt ist nicht verfügbar
APT15D60KG APT15D60KG Microchip Technology 6645-apt15d60kg-datasheet Description: DIODE GP 600V 15A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Produkt ist nicht verfügbar
APT15DQ100BCTG APT15DQ100BCTG Microchip Technology 6647-apt15dq100bctg-datasheet Description: DIODE ARRAY GP 1000V 15A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 235 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
auf Bestellung 1190 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.89 EUR
100+ 5.58 EUR
Mindestbestellmenge: 4
APT15DQ100BG APT15DQ100BG Microchip Technology 123689-apt15dq100b-s-g-c-pdf Description: DIODE GEN PURP 1KV 15A TO247
Produkt ist nicht verfügbar
APT15DQ120BG APT15DQ120BG Microchip Technology 123688-apt15dq120bg-apt15dq120sg-datasheet Description: DIODE GEN PURP 1.2KV 15A TO247
Produkt ist nicht verfügbar
APT15DQ120KG APT15DQ120KG Microchip Technology 123687-apt15dq120kg-datasheet Description: DIODE GP 1.2KV 15A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 240 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 187 Stücke:
Lieferzeit 21-28 Tag (e)
12+2.34 EUR
100+ 1.92 EUR
Mindestbestellmenge: 12
APT15DQ60BCTG APT15DQ60BCTG Microchip Technology 6656-apt15dq60bctg-datasheet Description: DIODE ARRAY GP 600V 15A TO247
auf Bestellung 5747 Stücke:
Lieferzeit 21-28 Tag (e)
APT15DQ60BG APT15DQ60BG Microchip Technology 6655-apt15dq60bg-apt15dq60sg-datasheet Description: DIODE GP 600V 15A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 19 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 15 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
auf Bestellung 5 Stücke:
Lieferzeit 21-28 Tag (e)
APT15DS60BG APT15DS60BG Microchip Technology index.php?option=com_docman&task=doc_download&gid=6660 Description: DIODE ARRAY GP 600V 13A TO247
Produkt ist nicht verfügbar
APT15GN120BDQ1G APT15GN120BDQ1G Microchip Technology 6670-apt15gn120bdq1g-apt15gn120sdq1g-datasheet Description: IGBT 1200V 45A 195W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/150ns
Switching Energy: 410µJ (on), 950µJ (off)
Test Condition: 800V, 15A, 4.3Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 195 W
Produkt ist nicht verfügbar
APT15GP60BG APT15GP60BG Microchip Technology 6673-apt15gp60bg-apt15gp60sg-datasheet Description: IGBT 600V 56A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 8ns/29ns
Switching Energy: 130µJ (on), 121µJ (off)
Test Condition: 400V, 15A, 5Ohm, 15V
Gate Charge: 55 nC
Part Status: Active
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 65 A
Power - Max: 250 W
Produkt ist nicht verfügbar
APT15GP90BDQ1G APT15GP90BDQ1G Microchip Technology 5770-apt15gp90bdq1g-datasheet Description: IGBT 900V 43A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 9ns/33ns
Switching Energy: 200µJ (off)
Test Condition: 600V, 15A, 4.3Ohm, 15V
Gate Charge: 60 nC
Part Status: Active
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 250 W
Produkt ist nicht verfügbar
APT15GT120BRDQ1G APT15GT120BRDQ1G Microchip Technology index.php?option=com_docman&task=doc_download&gid=123698 Description: IGBT 1200V 36A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 10ns/85ns
Switching Energy: 585µJ (on), 260µJ (off)
Test Condition: 800V, 15A, 5Ohm, 15V
Gate Charge: 105 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
Produkt ist nicht verfügbar
APT15GT120BRG APT15GT120BRG Microchip Technology 6678-apt15gt120brg-apt15gt120srg-datasheet Description: IGBT 1200V 36A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 10ns/85ns
Switching Energy: 585µJ (on), 260µJ (off)
Test Condition: 800V, 15A, 5Ohm, 15V
Gate Charge: 105 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
Produkt ist nicht verfügbar
APT15GT60BRDQ1G APT15GT60BRDQ1G Microchip Technology 6683-apt15gt60brdq1g-datasheet Description: IGBT 600V 42A 184W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 6ns/105ns
Switching Energy: 150µJ (on), 215µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 75 nC
Part Status: Active
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 184 W
Produkt ist nicht verfügbar
APT15GT60BRG APT15GT60BRG Microchip Technology 6681-apt15gt60brg-datasheet Description: IGBT 600V 42A 184W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 6ns/105ns
Switching Energy: 150µJ (on), 215µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 75 nC
Part Status: Active
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 184 W
Produkt ist nicht verfügbar
APT17F100B APT17F100B Microchip Technology index.php?option=com_docman&task=doc_download&gid=6691 Description: MOSFET N-CH 1000V 17A TO247
auf Bestellung 48 Stücke:
Lieferzeit 21-28 Tag (e)
APT18M100B APT18M100B Microchip Technology 6702-apt18m100b-apt18m100s-datasheet Description: MOSFET N-CH 1000V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 9A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4845 pF @ 25 V
auf Bestellung 53 Stücke:
Lieferzeit 21-28 Tag (e)
2+24.75 EUR
Mindestbestellmenge: 2
APT18M80B APT18M80B Microchip Technology 6704-apt18m80b-apt18m80s-datasheet Description: MOSFET N-CH 800V 19A TO247
Produkt ist nicht verfügbar
APT19F100J APT19F100J Microchip Technology 6708-apt19f100j-datasheet Description: MOSFET N-CH 1000V 20A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 16A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 21-28 Tag (e)
1+87.18 EUR
APT19M120J APT19M120J Microchip Technology 6710-apt19m120j-datasheet Description: MOSFET N-CH 1200V 19A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 14A, 10V
Power Dissipation (Max): 545W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V
Produkt ist nicht verfügbar
APT20GT60BRDQ1G APT20GT60BRDQ1G Microchip Technology 6730-apt20gt60brdq1g-datasheet Description: IGBT NPT 600V 43A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 8ns/80ns
Switching Energy: 215µJ (on), 245µJ (off)
Test Condition: 400V, 20A, 5Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 174 W
Produkt ist nicht verfügbar
APT20GT60BRG APT20GT60BRG Microchip Technology 6729-apt20gt60brg-datasheet Description: IGBT NPT 600V 43A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 8ns/80ns
Switching Energy: 215µJ (on), 245µJ (off)
Test Condition: 400V, 20A, 5Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 174 W
Produkt ist nicht verfügbar
APT20M11JVR APT20M11JVR Microchip Technology 6735-apt20m11jvr-datasheet Description: MOSFET N-CH 200V 175A SOT-227
auf Bestellung 20 Stücke:
Lieferzeit 21-28 Tag (e)
APT20M38BVRG APT20M38BVRG Microchip Technology 5960-apt20m38bvr-datasheet Description: MOSFET N-CH 200V 67A TO247
auf Bestellung 40 Stücke:
Lieferzeit 21-28 Tag (e)
1+30.76 EUR
APT20M38SVRG APT20M38SVRG Microchip Technology 5961-apt20m38svr-datasheet Description: MOSFET N-CH 200V 67A D3PAK
auf Bestellung 11 Stücke:
Lieferzeit 21-28 Tag (e)
1+32.19 EUR
APT20M45BVFRG APT20M45BVFRG Microchip Technology 5963-apt20m45bvfrg-datasheet Description: MOSFET N-CH 200V 56A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4860 pF @ 25 V
Produkt ist nicht verfügbar
APT21M100J APT21M100J Microchip Technology 6760-apt21m100j-datasheet Description: MOSFET N-CH 1000V 21A ISOTOP
auf Bestellung 8 Stücke:
Lieferzeit 21-28 Tag (e)
APT22F120L APT22F120L Microchip Technology 6766-apt22f120b2-apt22f120l-datasheet Description: MOSFET N-CH 1200V 23A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 12A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8370 pF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 21-28 Tag (e)
1+40.09 EUR
APT22F80B APT22F80B Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 800V 23A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4595 pF @ 25 V
Produkt ist nicht verfügbar
APT24M120B2 APT24M120B2 Microchip Technology 6781-apt24m120b2-apt24m120l-datasheet Description: MOSFET N-CH 1200V 24A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 12A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8370 pF @ 25 V
auf Bestellung 12 Stücke:
Lieferzeit 21-28 Tag (e)
1+35.88 EUR
APT25GN120B2DQ2G APT25GN120B2DQ2G Microchip Technology 5989-apt25gn120b2dq2g-datasheet Description: IGBT 1200V 67A 272W TMAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 22ns/280ns
Switching Energy: 2.15µJ (off)
Test Condition: 800V, 25A, 4.3Ohm, 15V
Gate Charge: 155 nC
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 272 W
Produkt ist nicht verfügbar
APT25GN120BG APT25GN120BG Microchip Technology 6785-apt25gn120bg-apt25gn120sg-datasheet Description: IGBT 1200V 67A 272W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/280ns
Switching Energy: 2.15µJ (off)
Test Condition: 800V, 25A, 1Ohm, 15V
Gate Charge: 155 nC
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 272 W
Produkt ist nicht verfügbar
APT25GP120BDQ1G APT25GP120BDQ1G Microchip Technology 6786-apt25gp120bdq1g-datasheet Description: IGBT 1200V 69A 417W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/70ns
Switching Energy: 500µJ (on), 440µJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 69 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 417 W
Produkt ist nicht verfügbar
APT25GP120BG APT25GP120BG Microchip Technology 5990-apt25gp120b-datasheet Description: IGBT 1200V 69A 417W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/70ns
Switching Energy: 500µJ (on), 438µJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 69 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 417 W
auf Bestellung 52 Stücke:
Lieferzeit 21-28 Tag (e)
2+25.4 EUR
Mindestbestellmenge: 2
APT25GP90BDQ1G APT25GP90BDQ1G Microchip Technology 5992-apt25gp90bdq1g-datasheet Description: IGBT PT 900V 72A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/55ns
Switching Energy: 370µJ (off)
Test Condition: 600V, 40A, 4.3Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 417 W
Produkt ist nicht verfügbar
APT25GP90BG APT25GP90BG Microchip Technology 5991-apt25gp90b-datasheet Description: IGBT 900V 72A 417W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/55ns
Switching Energy: 370µJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 417 W
auf Bestellung 60 Stücke:
Lieferzeit 21-28 Tag (e)
2+21.11 EUR
Mindestbestellmenge: 2
APT25GT120BRDQ2G APT25GT120BRDQ2G Microchip Technology 6791-apt25gt120brdq2g-datasheet Description: IGBT 1200V 54A 347W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 14ns/150ns
Switching Energy: 930µJ (on), 720µJ (off)
Test Condition: 800V, 25A, 5Ohm, 15V
Gate Charge: 170 nC
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 347 W
auf Bestellung 23 Stücke:
Lieferzeit 21-28 Tag (e)
2+19.58 EUR
Mindestbestellmenge: 2
APT25GT120BRG APT25GT120BRG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT NPT 1200V 54A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 14ns/150ns
Switching Energy: 930µJ (on), 720µJ (off)
Test Condition: 800V, 25A, 5Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 347 W
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
2+15.63 EUR
100+ 12.69 EUR
Mindestbestellmenge: 2
APT25M100J APT25M100J Microchip Technology 6793-apt25m100j-datasheet Description: MOSFET N-CH 1000V 25A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 18A, 10V
Power Dissipation (Max): 545W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9835 pF @ 25 V
Produkt ist nicht verfügbar
APT26F120B2 APT26F120B2 Microchip Technology 6796-apt26f120b2-apt26f120l-datasheet Description: MOSFET N-CH 1200V 27A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 14A, 10V
Power Dissipation (Max): 1135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V
Produkt ist nicht verfügbar
APT26F120L APT26F120L Microchip Technology 6796-apt26f120b2-apt26f120l-datasheet Description: MOSFET N-CH 1200V 27A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 14A, 10V
Power Dissipation (Max): 1135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V
Produkt ist nicht verfügbar
APT28M120B2 APT28M120B2 Microchip Technology 6817-apt28m120b2-apt28m120l-datasheet Description: MOSFET N-CH 1200V 29A T-MAX
auf Bestellung 315 Stücke:
Lieferzeit 21-28 Tag (e)
APT28M120L APT28M120L Microchip Technology 6817-apt28m120b2-apt28m120l-datasheet Description: MOSFET N-CH 1200V 29A TO264
auf Bestellung 23 Stücke:
Lieferzeit 21-28 Tag (e)
1+65.57 EUR
APT29F100B2 APT29F100B2 Microchip Technology 6820-apt29f100b2-apt29f100l-datasheet Description: MOSFET N-CH 1000V 30A T-MAX
auf Bestellung 31 Stücke:
Lieferzeit 21-28 Tag (e)
1+47.79 EUR
APT29F100L APT29F100L Microchip Technology 6820-apt29f100b2-apt29f100l-datasheet Description: MOSFET N-CH 1000V 30A TO264
Produkt ist nicht verfügbar
APT29F80J APT29F80J Microchip Technology 6822-apt29f80j-datasheet Description: MOSFET N-CH 800V 31A ISOTOP
Produkt ist nicht verfügbar
APT2X100D40J APT2X100D40J Microchip Technology 123800-apt2x101d40j-apt2x100d40j-datasheet Description: DIODE MODULE 400V 100A ISOTOP
Produkt ist nicht verfügbar
APT2X100D60J APT2X100D60J Microchip Technology 123801-apt2x101d60j-apt2x100d60j-datasheet Description: DIODE MODULE 600V 100A ISOTOP
auf Bestellung 20 Stücke:
Lieferzeit 21-28 Tag (e)
APT2X100DQ120J APT2X100DQ120J Microchip Technology 123803-apt2x101dq120j-apt2x100dq120j-datasheet Description: DIODE MODULE 1.2KV 100A ISOTOP
Produkt ist nicht verfügbar
APT2X100DQ60J APT2X100DQ60J Microchip Technology 123683-apt2x101dq60j-apt2x100dq60j-datasheet Description: DIODE MODULE 600V 100A ISOTOP
auf Bestellung 27 Stücke:
Lieferzeit 21-28 Tag (e)
1+56.08 EUR
APT15D100BCTG 5745-apt15d100bctg-datasheet
APT15D100BCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 1000V 15A TO247
Produkt ist nicht verfügbar
APT15D100BG 5744-apt15d100bg-datasheet
APT15D100BG
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 15A TO247
auf Bestellung 288 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.99 EUR
100+ 6.46 EUR
Mindestbestellmenge: 4
APT15D100BHBG 5746-apt15d100bhbg-datasheet
APT15D100BHBG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 1000V 15A TO247
Produkt ist nicht verfügbar
APT15D100KG index.php?option=com_docman&task=doc_download&gid=6637
APT15D100KG
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 15A TO220
auf Bestellung 175 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.62 EUR
100+ 5.15 EUR
Mindestbestellmenge: 5
APT15D120KG 123643-apt15d120kg-datasheet
APT15D120KG
Hersteller: Microchip Technology
Description: DIODE GP 1.2KV 15A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 260 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
auf Bestellung 255 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.23 EUR
100+ 4.23 EUR
Mindestbestellmenge: 5
APT15D40BCTG 123678-apt15d40bctg-datasheet
APT15D40BCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 400V 15A TO247
Produkt ist nicht verfügbar
APT15D40KG 123796-apt15d40kg-datasheet
APT15D40KG
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 15A TO220-2
Produkt ist nicht verfügbar
APT15D60BCAG 5754-apt15d60bcag-datasheet
APT15D60BCAG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 600V 14A TO247
Produkt ist nicht verfügbar
APT15D60BCTG 5755-apt15d60bctg-datasheet
APT15D60BCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 600V 15A TO247
Produkt ist nicht verfügbar
APT15D60BG 5753-apt15d60bg-datasheet
APT15D60BG
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 15A TO247
Produkt ist nicht verfügbar
APT15D60KG 6645-apt15d60kg-datasheet
APT15D60KG
Hersteller: Microchip Technology
Description: DIODE GP 600V 15A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Produkt ist nicht verfügbar
APT15DQ100BCTG 6647-apt15dq100bctg-datasheet
APT15DQ100BCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 1000V 15A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 235 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
auf Bestellung 1190 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.89 EUR
100+ 5.58 EUR
Mindestbestellmenge: 4
APT15DQ100BG 123689-apt15dq100b-s-g-c-pdf
APT15DQ100BG
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 15A TO247
Produkt ist nicht verfügbar
APT15DQ120BG 123688-apt15dq120bg-apt15dq120sg-datasheet
APT15DQ120BG
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1.2KV 15A TO247
Produkt ist nicht verfügbar
APT15DQ120KG 123687-apt15dq120kg-datasheet
APT15DQ120KG
Hersteller: Microchip Technology
Description: DIODE GP 1.2KV 15A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 240 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 187 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
12+2.34 EUR
100+ 1.92 EUR
Mindestbestellmenge: 12
APT15DQ60BCTG 6656-apt15dq60bctg-datasheet
APT15DQ60BCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 600V 15A TO247
auf Bestellung 5747 Stücke:
Lieferzeit 21-28 Tag (e)
APT15DQ60BG 6655-apt15dq60bg-apt15dq60sg-datasheet
APT15DQ60BG
Hersteller: Microchip Technology
Description: DIODE GP 600V 15A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 19 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 15 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
auf Bestellung 5 Stücke:
Lieferzeit 21-28 Tag (e)
APT15DS60BG index.php?option=com_docman&task=doc_download&gid=6660
APT15DS60BG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 600V 13A TO247
Produkt ist nicht verfügbar
APT15GN120BDQ1G 6670-apt15gn120bdq1g-apt15gn120sdq1g-datasheet
APT15GN120BDQ1G
Hersteller: Microchip Technology
Description: IGBT 1200V 45A 195W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/150ns
Switching Energy: 410µJ (on), 950µJ (off)
Test Condition: 800V, 15A, 4.3Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 195 W
Produkt ist nicht verfügbar
APT15GP60BG 6673-apt15gp60bg-apt15gp60sg-datasheet
APT15GP60BG
Hersteller: Microchip Technology
Description: IGBT 600V 56A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 8ns/29ns
Switching Energy: 130µJ (on), 121µJ (off)
Test Condition: 400V, 15A, 5Ohm, 15V
Gate Charge: 55 nC
Part Status: Active
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 65 A
Power - Max: 250 W
Produkt ist nicht verfügbar
APT15GP90BDQ1G 5770-apt15gp90bdq1g-datasheet
APT15GP90BDQ1G
Hersteller: Microchip Technology
Description: IGBT 900V 43A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 9ns/33ns
Switching Energy: 200µJ (off)
Test Condition: 600V, 15A, 4.3Ohm, 15V
Gate Charge: 60 nC
Part Status: Active
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 250 W
Produkt ist nicht verfügbar
APT15GT120BRDQ1G index.php?option=com_docman&task=doc_download&gid=123698
APT15GT120BRDQ1G
Hersteller: Microchip Technology
Description: IGBT 1200V 36A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 10ns/85ns
Switching Energy: 585µJ (on), 260µJ (off)
Test Condition: 800V, 15A, 5Ohm, 15V
Gate Charge: 105 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
Produkt ist nicht verfügbar
APT15GT120BRG 6678-apt15gt120brg-apt15gt120srg-datasheet
APT15GT120BRG
Hersteller: Microchip Technology
Description: IGBT 1200V 36A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 10ns/85ns
Switching Energy: 585µJ (on), 260µJ (off)
Test Condition: 800V, 15A, 5Ohm, 15V
Gate Charge: 105 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
Produkt ist nicht verfügbar
APT15GT60BRDQ1G 6683-apt15gt60brdq1g-datasheet
APT15GT60BRDQ1G
Hersteller: Microchip Technology
Description: IGBT 600V 42A 184W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 6ns/105ns
Switching Energy: 150µJ (on), 215µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 75 nC
Part Status: Active
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 184 W
Produkt ist nicht verfügbar
APT15GT60BRG 6681-apt15gt60brg-datasheet
APT15GT60BRG
Hersteller: Microchip Technology
Description: IGBT 600V 42A 184W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 6ns/105ns
Switching Energy: 150µJ (on), 215µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 75 nC
Part Status: Active
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 184 W
Produkt ist nicht verfügbar
APT17F100B index.php?option=com_docman&task=doc_download&gid=6691
APT17F100B
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 17A TO247
auf Bestellung 48 Stücke:
Lieferzeit 21-28 Tag (e)
APT18M100B 6702-apt18m100b-apt18m100s-datasheet
APT18M100B
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 9A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4845 pF @ 25 V
auf Bestellung 53 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+24.75 EUR
Mindestbestellmenge: 2
APT18M80B 6704-apt18m80b-apt18m80s-datasheet
APT18M80B
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 19A TO247
Produkt ist nicht verfügbar
APT19F100J 6708-apt19f100j-datasheet
APT19F100J
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 20A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 16A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+87.18 EUR
APT19M120J 6710-apt19m120j-datasheet
APT19M120J
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 19A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 14A, 10V
Power Dissipation (Max): 545W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V
Produkt ist nicht verfügbar
APT20GT60BRDQ1G 6730-apt20gt60brdq1g-datasheet
APT20GT60BRDQ1G
Hersteller: Microchip Technology
Description: IGBT NPT 600V 43A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 8ns/80ns
Switching Energy: 215µJ (on), 245µJ (off)
Test Condition: 400V, 20A, 5Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 174 W
Produkt ist nicht verfügbar
APT20GT60BRG 6729-apt20gt60brg-datasheet
APT20GT60BRG
Hersteller: Microchip Technology
Description: IGBT NPT 600V 43A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 8ns/80ns
Switching Energy: 215µJ (on), 245µJ (off)
Test Condition: 400V, 20A, 5Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 174 W
Produkt ist nicht verfügbar
APT20M11JVR 6735-apt20m11jvr-datasheet
APT20M11JVR
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 175A SOT-227
auf Bestellung 20 Stücke:
Lieferzeit 21-28 Tag (e)
APT20M38BVRG 5960-apt20m38bvr-datasheet
APT20M38BVRG
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 67A TO247
auf Bestellung 40 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+30.76 EUR
APT20M38SVRG 5961-apt20m38svr-datasheet
APT20M38SVRG
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 67A D3PAK
auf Bestellung 11 Stücke:
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Anzahl Preis ohne MwSt
1+32.19 EUR
APT20M45BVFRG 5963-apt20m45bvfrg-datasheet
APT20M45BVFRG
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 56A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4860 pF @ 25 V
Produkt ist nicht verfügbar
APT21M100J 6760-apt21m100j-datasheet
APT21M100J
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 21A ISOTOP
auf Bestellung 8 Stücke:
Lieferzeit 21-28 Tag (e)
APT22F120L 6766-apt22f120b2-apt22f120l-datasheet
APT22F120L
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 23A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 12A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8370 pF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+40.09 EUR
APT22F80B High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT22F80B
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 23A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4595 pF @ 25 V
Produkt ist nicht verfügbar
APT24M120B2 6781-apt24m120b2-apt24m120l-datasheet
APT24M120B2
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 24A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 12A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8370 pF @ 25 V
auf Bestellung 12 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+35.88 EUR
APT25GN120B2DQ2G 5989-apt25gn120b2dq2g-datasheet
APT25GN120B2DQ2G
Hersteller: Microchip Technology
Description: IGBT 1200V 67A 272W TMAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 22ns/280ns
Switching Energy: 2.15µJ (off)
Test Condition: 800V, 25A, 4.3Ohm, 15V
Gate Charge: 155 nC
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 272 W
Produkt ist nicht verfügbar
APT25GN120BG 6785-apt25gn120bg-apt25gn120sg-datasheet
APT25GN120BG
Hersteller: Microchip Technology
Description: IGBT 1200V 67A 272W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/280ns
Switching Energy: 2.15µJ (off)
Test Condition: 800V, 25A, 1Ohm, 15V
Gate Charge: 155 nC
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 272 W
Produkt ist nicht verfügbar
APT25GP120BDQ1G 6786-apt25gp120bdq1g-datasheet
APT25GP120BDQ1G
Hersteller: Microchip Technology
Description: IGBT 1200V 69A 417W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/70ns
Switching Energy: 500µJ (on), 440µJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 69 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 417 W
Produkt ist nicht verfügbar
APT25GP120BG 5990-apt25gp120b-datasheet
APT25GP120BG
Hersteller: Microchip Technology
Description: IGBT 1200V 69A 417W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/70ns
Switching Energy: 500µJ (on), 438µJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 69 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 417 W
auf Bestellung 52 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+25.4 EUR
Mindestbestellmenge: 2
APT25GP90BDQ1G 5992-apt25gp90bdq1g-datasheet
APT25GP90BDQ1G
Hersteller: Microchip Technology
Description: IGBT PT 900V 72A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/55ns
Switching Energy: 370µJ (off)
Test Condition: 600V, 40A, 4.3Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 417 W
Produkt ist nicht verfügbar
APT25GP90BG 5991-apt25gp90b-datasheet
APT25GP90BG
Hersteller: Microchip Technology
Description: IGBT 900V 72A 417W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/55ns
Switching Energy: 370µJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 417 W
auf Bestellung 60 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+21.11 EUR
Mindestbestellmenge: 2
APT25GT120BRDQ2G 6791-apt25gt120brdq2g-datasheet
APT25GT120BRDQ2G
Hersteller: Microchip Technology
Description: IGBT 1200V 54A 347W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 14ns/150ns
Switching Energy: 930µJ (on), 720µJ (off)
Test Condition: 800V, 25A, 5Ohm, 15V
Gate Charge: 170 nC
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 347 W
auf Bestellung 23 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+19.58 EUR
Mindestbestellmenge: 2
APT25GT120BRG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT25GT120BRG
Hersteller: Microchip Technology
Description: IGBT NPT 1200V 54A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 14ns/150ns
Switching Energy: 930µJ (on), 720µJ (off)
Test Condition: 800V, 25A, 5Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 347 W
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+15.63 EUR
100+ 12.69 EUR
Mindestbestellmenge: 2
APT25M100J 6793-apt25m100j-datasheet
APT25M100J
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 25A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 18A, 10V
Power Dissipation (Max): 545W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9835 pF @ 25 V
Produkt ist nicht verfügbar
APT26F120B2 6796-apt26f120b2-apt26f120l-datasheet
APT26F120B2
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 27A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 14A, 10V
Power Dissipation (Max): 1135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V
Produkt ist nicht verfügbar
APT26F120L 6796-apt26f120b2-apt26f120l-datasheet
APT26F120L
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 27A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 14A, 10V
Power Dissipation (Max): 1135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V
Produkt ist nicht verfügbar
APT28M120B2 6817-apt28m120b2-apt28m120l-datasheet
APT28M120B2
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 29A T-MAX
auf Bestellung 315 Stücke:
Lieferzeit 21-28 Tag (e)
APT28M120L 6817-apt28m120b2-apt28m120l-datasheet
APT28M120L
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 29A TO264
auf Bestellung 23 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+65.57 EUR
APT29F100B2 6820-apt29f100b2-apt29f100l-datasheet
APT29F100B2
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 30A T-MAX
auf Bestellung 31 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+47.79 EUR
APT29F100L 6820-apt29f100b2-apt29f100l-datasheet
APT29F100L
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 30A TO264
Produkt ist nicht verfügbar
APT29F80J 6822-apt29f80j-datasheet
APT29F80J
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 31A ISOTOP
Produkt ist nicht verfügbar
APT2X100D40J 123800-apt2x101d40j-apt2x100d40j-datasheet
APT2X100D40J
Hersteller: Microchip Technology
Description: DIODE MODULE 400V 100A ISOTOP
Produkt ist nicht verfügbar
APT2X100D60J 123801-apt2x101d60j-apt2x100d60j-datasheet
APT2X100D60J
Hersteller: Microchip Technology
Description: DIODE MODULE 600V 100A ISOTOP
auf Bestellung 20 Stücke:
Lieferzeit 21-28 Tag (e)
APT2X100DQ120J 123803-apt2x101dq120j-apt2x100dq120j-datasheet
APT2X100DQ120J
Hersteller: Microchip Technology
Description: DIODE MODULE 1.2KV 100A ISOTOP
Produkt ist nicht verfügbar
APT2X100DQ60J 123683-apt2x101dq60j-apt2x100dq60j-datasheet
APT2X100DQ60J
Hersteller: Microchip Technology
Description: DIODE MODULE 600V 100A ISOTOP
auf Bestellung 27 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+56.08 EUR
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