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SY58604UMG-TR SY58604UMG-TR Microchip Technology sy58604u.pdf Description: IC CLK BUFFER 1:1 3GHZ 8MLF
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Buffer/Driver
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 8-MLF® (2x2)
Part Status: Active
Frequency - Max: 3 GHz
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SY58605UMG-TR SY58605UMG-TR Microchip Technology sy58605u.pdf Description: IC CLK BUFFER 1:1 3GHZ 8MLF
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVDS
Type: Buffer/Driver
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 2.625V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 8-MLF® (2x2)
Frequency - Max: 3 GHz
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KSZ8893MQL-EVAL KSZ8893MQL-EVAL Microchip Technology KSZ8893M_ds.pdf Description: EVAL BOARD FOR KSZ8893MQL
Packaging: Bulk
Function: Ethernet Controller (PHY and MAC)
Type: Interface
Contents: Board(s)
Utilized IC / Part: KSZ8893MQL
Supplied Contents: Board(s)
Primary Attributes: 3 Ports, 100BASE-TX/100BASE-FX/10BASE-T, Managed
Secondary Attributes: MII, RMII, SNI, Auto MDI, MDI-X Auto Polarity Correction, LinkMD
Embedded: No
Produkt ist nicht verfügbar
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APT14M100B APT14M100B Microchip Technology 6627-apt14m100bg-apt14m100sg-datasheet Description: MOSFET N-CH 1000V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 7A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V
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APT15DQ100KG APT15DQ100KG Microchip Technology 6649-apt15dq100kg-datasheet Description: DIODE GEN PURP 1KV 15A TO220
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APT15DQ60KG APT15DQ60KG Microchip Technology 123682-apt15dq60kg-datasheet Description: DIODE GP 600V 15A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 19 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 15 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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APT15GP60BDQ1G APT15GP60BDQ1G Microchip Technology 5767-apt15gp60bdq1g-datasheet Description: IGBT PT 600V 56A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 8ns/29ns
Switching Energy: 130µJ (on), 120µJ (off)
Test Condition: 400V, 15A, 5Ohm, 15V
Gate Charge: 55 nC
Part Status: Active
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 65 A
Power - Max: 250 W
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APT24F50B APT24F50B Microchip Technology 6779-apt24f50b-apt24f50s-datasheet Description: MOSFET N-CH 500V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 11A, 10V
Power Dissipation (Max): 335W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 25 V
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APT30DQ100BG APT30DQ100BG Microchip Technology 123693-apt30dq100bg-apt30dq100sg-datasheet Description: DIODE GEN PURP 1KV 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 295 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
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APT30DQ60BG APT30DQ60BG Microchip Technology Microsemi_APT30DQ60BG_Rectifier_Diode_Datasheet_E.pdf Description: DIODE STD 600V 30A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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APT30F50B APT30F50B Microchip Technology 6891-apt30f50b-apt30f50s-datasheet Description: MOSFET N-CH 500V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 14A, 10V
Power Dissipation (Max): 415W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4525 pF @ 25 V
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APT30GP60BG APT30GP60BG Microchip Technology 6902-apt30gp60bg-apt30gp60sg-datasheet Description: IGBT PT 600V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/55ns
Switching Energy: 260µJ (on), 250µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 463 W
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APT30GP60BDQ1G APT30GP60BDQ1G Microchip Technology APT30GP60BDQ1(G)_A.pdf Description: IGBT PT 600V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/55ns
Switching Energy: 260µJ (on), 250µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 463 W
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APT31M100L APT31M100L Microchip Technology 6936-apt31m100b2-apt31m100l-datasheet Description: MOSFET N-CH 1000V 32A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 16A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
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APT40GP60B2DQ2G APT40GP60B2DQ2G Microchip Technology APT40GP60B2DQ2_A.pdf Description: IGBT PT 600V 100A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/64ns
Switching Energy: 385µJ (on), 350µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 135 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 543 W
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APT42F50B APT42F50B Microchip Technology 7028-apt42f50b-apt42f50s-datasheet Description: MOSFET N-CH 500V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 21A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6810 pF @ 25 V
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APT56M60B2 APT56M60B2 Microchip Technology 7157-apt56m60b2-apt56m60l-datasheet Description: MOSFET N-CH 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 28A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
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APT60DQ120BG APT60DQ120BG Microchip Technology Microsemi_APT60DQ120BG_Rectifier_Diode_Datasheet_C.pdf Description: DIODE STD 1200V 60A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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APT60DQ60BG APT60DQ60BG Microchip Technology APT60DQ60BG_Rectifier_Diode_Datasheet_C.pdf Description: DIODE GP 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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AT89OCD-01 AT89OCD-01 Microchip Technology Description: USB EMULATOR FOR AT8XC51 MCU
Packaging: Bulk
For Use With/Related Products: AT89C51Rx2
Type: Emulator (In-Circuit/In-System)
Contents: Board(s), Cable(s)
Part Status: Obsolete
Produkt ist nicht verfügbar
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QT60160-ISG QT60160-ISG Microchip Technology qt60240_r8.06.pdf description Description: IC TOUCH SENSOR 16KEY 32-QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.25V
Current - Supply: 4.6mA
Number of Inputs: Up to 16
Resolution: 10 b
Supplier Device Package: 32-QFN (5x5)
Proximity Detection: No
DigiKey Programmable: Not Verified
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QT1081-ISG QT1081-ISG Microchip Technology QT1081.pdf description Description: SENSOR IC QTOUCH 8 KEY 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.8V ~ 5V
Current - Supply: 5.6mA
Number of Inputs: Up to 8
Resolution: 8 b
Supplier Device Package: 32-QFN (5x5)
Proximity Detection: Yes
DigiKey Programmable: Not Verified
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QT60160-ISG QT60160-ISG Microchip Technology qt60240_r8.06.pdf description Description: IC TOUCH SENSOR 16KEY 32-QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.25V
Current - Supply: 4.6mA
Number of Inputs: Up to 16
Resolution: 10 b
Supplier Device Package: 32-QFN (5x5)
Proximity Detection: No
DigiKey Programmable: Not Verified
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JANTX1N5615 JANTX1N5615 Microchip Technology 1N5615-1N5623-SA7-47-MIL-PRF-19500-429.pdf Description: DIODE STANDARD 200V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/429
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AT45DB021D-MH-Y AT45DB021D-MH-Y Microchip Technology AT45DB021D.pdf Description: IC FLASH 2MBIT SPI 66MHZ 8UDFN
Packaging: Tray
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 8-UDFN (5x6)
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Memory Organization: 264 Bytes x 1024 pages
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AT45DB021D-SH-B AT45DB021D-SH-B Microchip Technology AT45DB021D.pdf description Description: IC FLASH 2MBIT SPI 66MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Memory Organization: 264 Bytes x 1024 pages
DigiKey Programmable: Verified
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AT45DB021D-SSH-B AT45DB021D-SSH-B Microchip Technology AT45DB021D.pdf description Description: IC FLASH 2MBIT SPI 66MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Memory Organization: 264 Bytes x 1024 pages
DigiKey Programmable: Verified
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MICRF600DEV1 MICRF600DEV1 Microchip Technology MICRF600.pdf Description: KIT DEV RADIOWIRE 902-928MHZ
Packaging: Bulk
For Use With/Related Products: MICRF600
Frequency: 850MHz ~ 950MHz
Type: Transceiver, ISM
Supplied Contents: Board(s), Cable(s), Accessories
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MICRF505DEV1 MICRF505DEV1 Microchip Technology micrf505.pdf Description: KIT DEV RADIOWIRE 850-950MHZ
Packaging: Bulk
For Use With/Related Products: MICRF505
Frequency: 850MHz ~ 950MHz
Type: Transceiver, ISM
Supplied Contents: Board(s), Cable(s), Accessories
Part Status: Discontinued at Digi-Key
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APL1001J APL1001J Microchip Technology 6530-apl1001j-datasheet Description: MOSFET N-CH 1000V 18A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Produkt ist nicht verfügbar
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APL502B2G APL502B2G Microchip Technology 6533-apl502b2-apl502lg-datasheet Description: MOSFET N-CH 500V 58A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 29A, 12V
Power Dissipation (Max): 730W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
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APL502J APL502J Microchip Technology 6534-apl502j-datasheet Description: MOSFET N-CH 500V 52A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 26A, 12V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
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APL502LG APL502LG Microchip Technology Description: MOSFET N-CH 500V 58A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 29A, 12V
Power Dissipation (Max): 730W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
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APL602B2G APL602B2G Microchip Technology 6535-apl602b2-apl602l-datasheet Description: MOSFET N-CH 600V 49A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 24.5A, 12V
Power Dissipation (Max): 730W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
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APL602J APL602J Microchip Technology APL602J_C.pdf Description: MOSFET N-CH 600V 43A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 21.5A, 12V
Power Dissipation (Max): 565W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
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APL602LG APL602LG Microchip Technology 6535-apl602b2-apl602l-datasheet Description: MOSFET N-CH 600V 49A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 24.5A, 12V
Power Dissipation (Max): 730W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Produkt ist nicht verfügbar
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APT10M25BVRG APT10M25BVRG Microchip Technology 6599-apt10m25bvr-datasheet Description: MOSFET N-CH 100V 75A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V
Produkt ist nicht verfügbar
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APT11F80B APT11F80B Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 800V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 337W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2471 pF @ 25 V
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APT11N80BC3G APT11N80BC3G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 800V 11A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.1A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 680µA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 25 V
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APT1201R2BFLLG APT1201R2BFLLG Microchip Technology 6603-apt1201r2bfllg-apt1201r2sfllg-datasheet Description: MOSFET N-CH 1200V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 6A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V
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APT12031JFLL APT12031JFLL Microchip Technology 6606-apt12031jfll-datasheet Description: MOSFET N-CH 1200V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 15A, 10V
Power Dissipation (Max): 690AW (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 365 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9480 pF @ 25 V
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APT1204R7BFLLG APT1204R7BFLLG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 1200V 3.5A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1.75A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 25 V
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APT12M80B APT12M80B Microchip Technology 6618-apt12m80b-apt12m80s-datasheet Description: MOSFET N-CH 800V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 6A, 10V
Power Dissipation (Max): 335W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
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APT13F120B APT13F120B Microchip Technology 6621-apt13f120b-apt13f120s-datasheet Description: MOSFET N-CH 1200V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 7A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 25 V
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APT13GP120BDQ1G APT13GP120BDQ1G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT PT 1200V 41A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 9ns/28ns
Switching Energy: 115µJ (on), 165µJ (off)
Test Condition: 600V, 13A, 5Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 250 W
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APT13GP120BG APT13GP120BG Microchip Technology 6622-apt13gp120bg-apt13gp120sg-datasheet Description: IGBT PT 1200V 41A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 9ns/28ns
Switching Energy: 115µJ (on), 165µJ (off)
Test Condition: 600V, 13A, 5Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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APT14F100B APT14F100B Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 1000V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 7A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V
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APT14M120B APT14M120B Microchip Technology 6629-apt14m120bg-apt14m120sg-datasheet Description: MOSFET N-CH 1200V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 7A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 25 V
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APT150GN120J APT150GN120J Microchip Technology APT150GN120J_B.pdf Description: IGBT MOD 1200V 215A 625W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 215 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 625 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 9.5 nF @ 25 V
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APT150GN60J APT150GN60J Microchip Technology 5739-apt150gn60j-datasheet Description: IGBT MOD 600V 220A 536W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 536 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 9.2 nF @ 25 V
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APT150GN60JDQ4 APT150GN60JDQ4 Microchip Technology 5740-apt150gn60jdq4-datasheet Description: IGBT MOD 600V 220A 536W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 536 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.2 nF @ 25 V
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APT15D100BCTG APT15D100BCTG Microchip Technology 5745-apt15d100bctg-datasheet Description: DIODE ARRAY GP 1000V 15A TO247
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APT15D100BG APT15D100BG Microchip Technology 5744-apt15d100bg-datasheet Description: DIODE GEN PURP 1KV 15A TO247
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APT15D100BHBG APT15D100BHBG Microchip Technology 5746-apt15d100bhbg-datasheet Description: DIODE ARRAY GP 1000V 15A TO247
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APT15D100KG APT15D100KG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: DIODE STD 1000V 15A TO220 [K]
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 260 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
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APT15D120KG APT15D120KG Microchip Technology 123643-apt15d120kg-datasheet Description: DIODE GP 1.2KV 15A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 260 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
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APT15D40BCTG APT15D40BCTG Microchip Technology 123678-apt15d40bctg-datasheet Description: DIODE ARRAY GP 400V 15A TO247
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APT15D40KG APT15D40KG Microchip Technology 123796-apt15d40kg-datasheet Description: DIODE GEN PURP 400V 15A TO220-2
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APT15D60BCAG APT15D60BCAG Microchip Technology 5754-apt15d60bcag-datasheet Description: DIODE ARRAY GP 600V 14A TO247
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APT15D60BCTG APT15D60BCTG Microchip Technology 5755-apt15d60bctg-datasheet Description: DIODE ARRAY GP 600V 15A TO247
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SY58604UMG-TR sy58604u.pdf
SY58604UMG-TR
Hersteller: Microchip Technology
Description: IC CLK BUFFER 1:1 3GHZ 8MLF
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Buffer/Driver
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 8-MLF® (2x2)
Part Status: Active
Frequency - Max: 3 GHz
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SY58605UMG-TR sy58605u.pdf
SY58605UMG-TR
Hersteller: Microchip Technology
Description: IC CLK BUFFER 1:1 3GHZ 8MLF
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVDS
Type: Buffer/Driver
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 2.625V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 8-MLF® (2x2)
Frequency - Max: 3 GHz
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2+9.19 EUR
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KSZ8893MQL-EVAL KSZ8893M_ds.pdf
KSZ8893MQL-EVAL
Hersteller: Microchip Technology
Description: EVAL BOARD FOR KSZ8893MQL
Packaging: Bulk
Function: Ethernet Controller (PHY and MAC)
Type: Interface
Contents: Board(s)
Utilized IC / Part: KSZ8893MQL
Supplied Contents: Board(s)
Primary Attributes: 3 Ports, 100BASE-TX/100BASE-FX/10BASE-T, Managed
Secondary Attributes: MII, RMII, SNI, Auto MDI, MDI-X Auto Polarity Correction, LinkMD
Embedded: No
Produkt ist nicht verfügbar
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APT14M100B 6627-apt14m100bg-apt14m100sg-datasheet
APT14M100B
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 7A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V
Produkt ist nicht verfügbar
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APT15DQ100KG 6649-apt15dq100kg-datasheet
APT15DQ100KG
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 15A TO220
Produkt ist nicht verfügbar
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APT15DQ60KG 123682-apt15dq60kg-datasheet
APT15DQ60KG
Hersteller: Microchip Technology
Description: DIODE GP 600V 15A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 19 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 15 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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APT15GP60BDQ1G 5767-apt15gp60bdq1g-datasheet
APT15GP60BDQ1G
Hersteller: Microchip Technology
Description: IGBT PT 600V 56A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 8ns/29ns
Switching Energy: 130µJ (on), 120µJ (off)
Test Condition: 400V, 15A, 5Ohm, 15V
Gate Charge: 55 nC
Part Status: Active
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 65 A
Power - Max: 250 W
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2+9.05 EUR
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APT24F50B 6779-apt24f50b-apt24f50s-datasheet
APT24F50B
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 11A, 10V
Power Dissipation (Max): 335W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 25 V
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APT30DQ100BG 123693-apt30dq100bg-apt30dq100sg-datasheet
APT30DQ100BG
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 295 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
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APT30DQ60BG Microsemi_APT30DQ60BG_Rectifier_Diode_Datasheet_E.pdf
APT30DQ60BG
Hersteller: Microchip Technology
Description: DIODE STD 600V 30A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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9+1.97 EUR
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APT30F50B 6891-apt30f50b-apt30f50s-datasheet
APT30F50B
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 14A, 10V
Power Dissipation (Max): 415W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4525 pF @ 25 V
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APT30GP60BG 6902-apt30gp60bg-apt30gp60sg-datasheet
APT30GP60BG
Hersteller: Microchip Technology
Description: IGBT PT 600V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/55ns
Switching Energy: 260µJ (on), 250µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 463 W
Produkt ist nicht verfügbar
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APT30GP60BDQ1G APT30GP60BDQ1(G)_A.pdf
APT30GP60BDQ1G
Hersteller: Microchip Technology
Description: IGBT PT 600V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/55ns
Switching Energy: 260µJ (on), 250µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 463 W
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APT31M100L 6936-apt31m100b2-apt31m100l-datasheet
APT31M100L
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 32A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 16A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
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APT40GP60B2DQ2G APT40GP60B2DQ2_A.pdf
APT40GP60B2DQ2G
Hersteller: Microchip Technology
Description: IGBT PT 600V 100A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/64ns
Switching Energy: 385µJ (on), 350µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 135 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 543 W
Produkt ist nicht verfügbar
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APT42F50B 7028-apt42f50b-apt42f50s-datasheet
APT42F50B
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 21A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6810 pF @ 25 V
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APT56M60B2 7157-apt56m60b2-apt56m60l-datasheet
APT56M60B2
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 28A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Produkt ist nicht verfügbar
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APT60DQ120BG Microsemi_APT60DQ120BG_Rectifier_Diode_Datasheet_C.pdf
APT60DQ120BG
Hersteller: Microchip Technology
Description: DIODE STD 1200V 60A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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APT60DQ60BG APT60DQ60BG_Rectifier_Diode_Datasheet_C.pdf
APT60DQ60BG
Hersteller: Microchip Technology
Description: DIODE GP 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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6+2.99 EUR
100+2.43 EUR
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AT89OCD-01
AT89OCD-01
Hersteller: Microchip Technology
Description: USB EMULATOR FOR AT8XC51 MCU
Packaging: Bulk
For Use With/Related Products: AT89C51Rx2
Type: Emulator (In-Circuit/In-System)
Contents: Board(s), Cable(s)
Part Status: Obsolete
Produkt ist nicht verfügbar
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QT60160-ISG description qt60240_r8.06.pdf
QT60160-ISG
Hersteller: Microchip Technology
Description: IC TOUCH SENSOR 16KEY 32-QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.25V
Current - Supply: 4.6mA
Number of Inputs: Up to 16
Resolution: 10 b
Supplier Device Package: 32-QFN (5x5)
Proximity Detection: No
DigiKey Programmable: Not Verified
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Anzahl Preis
3000+3.57 EUR
Mindestbestellmenge: 3000
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QT1081-ISG description QT1081.pdf
QT1081-ISG
Hersteller: Microchip Technology
Description: SENSOR IC QTOUCH 8 KEY 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.8V ~ 5V
Current - Supply: 5.6mA
Number of Inputs: Up to 8
Resolution: 8 b
Supplier Device Package: 32-QFN (5x5)
Proximity Detection: Yes
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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QT60160-ISG description qt60240_r8.06.pdf
QT60160-ISG
Hersteller: Microchip Technology
Description: IC TOUCH SENSOR 16KEY 32-QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.25V
Current - Supply: 4.6mA
Number of Inputs: Up to 16
Resolution: 10 b
Supplier Device Package: 32-QFN (5x5)
Proximity Detection: No
DigiKey Programmable: Not Verified
auf Bestellung 39442 Stücke:
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Anzahl Preis
5+4.29 EUR
25+3.96 EUR
100+3.57 EUR
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JANTX1N5615 1N5615-1N5623-SA7-47-MIL-PRF-19500-429.pdf
JANTX1N5615
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/429
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Anzahl Preis
3+7.5 EUR
100+6.96 EUR
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AT45DB021D-MH-Y AT45DB021D.pdf
AT45DB021D-MH-Y
Hersteller: Microchip Technology
Description: IC FLASH 2MBIT SPI 66MHZ 8UDFN
Packaging: Tray
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 8-UDFN (5x6)
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Memory Organization: 264 Bytes x 1024 pages
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AT45DB021D-SH-B description AT45DB021D.pdf
AT45DB021D-SH-B
Hersteller: Microchip Technology
Description: IC FLASH 2MBIT SPI 66MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Memory Organization: 264 Bytes x 1024 pages
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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AT45DB021D-SSH-B description AT45DB021D.pdf
AT45DB021D-SSH-B
Hersteller: Microchip Technology
Description: IC FLASH 2MBIT SPI 66MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Memory Organization: 264 Bytes x 1024 pages
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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MICRF600DEV1 MICRF600.pdf
MICRF600DEV1
Hersteller: Microchip Technology
Description: KIT DEV RADIOWIRE 902-928MHZ
Packaging: Bulk
For Use With/Related Products: MICRF600
Frequency: 850MHz ~ 950MHz
Type: Transceiver, ISM
Supplied Contents: Board(s), Cable(s), Accessories
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1+395.03 EUR
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MICRF505DEV1 micrf505.pdf
MICRF505DEV1
Hersteller: Microchip Technology
Description: KIT DEV RADIOWIRE 850-950MHZ
Packaging: Bulk
For Use With/Related Products: MICRF505
Frequency: 850MHz ~ 950MHz
Type: Transceiver, ISM
Supplied Contents: Board(s), Cable(s), Accessories
Part Status: Discontinued at Digi-Key
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APL1001J 6530-apl1001j-datasheet
APL1001J
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 18A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Produkt ist nicht verfügbar
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APL502B2G 6533-apl502b2-apl502lg-datasheet
APL502B2G
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 58A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 29A, 12V
Power Dissipation (Max): 730W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
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APL502J 6534-apl502j-datasheet
APL502J
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 52A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 26A, 12V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
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APL502LG
APL502LG
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 58A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 29A, 12V
Power Dissipation (Max): 730W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
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APL602B2G 6535-apl602b2-apl602l-datasheet
APL602B2G
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 49A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 24.5A, 12V
Power Dissipation (Max): 730W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Produkt ist nicht verfügbar
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APL602J APL602J_C.pdf
APL602J
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 43A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 21.5A, 12V
Power Dissipation (Max): 565W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Produkt ist nicht verfügbar
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APL602LG 6535-apl602b2-apl602l-datasheet
APL602LG
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 49A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 24.5A, 12V
Power Dissipation (Max): 730W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Produkt ist nicht verfügbar
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APT10M25BVRG 6599-apt10m25bvr-datasheet
APT10M25BVRG
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 75A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V
Produkt ist nicht verfügbar
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APT11F80B High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT11F80B
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 337W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2471 pF @ 25 V
Produkt ist nicht verfügbar
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APT11N80BC3G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT11N80BC3G
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 11A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.1A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 680µA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 25 V
auf Bestellung 88 Stücke:
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Anzahl Preis
3+6.79 EUR
Mindestbestellmenge: 3
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APT1201R2BFLLG 6603-apt1201r2bfllg-apt1201r2sfllg-datasheet
APT1201R2BFLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 6A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V
auf Bestellung 274 Stücke:
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100+33.79 EUR
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APT12031JFLL 6606-apt12031jfll-datasheet
APT12031JFLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 15A, 10V
Power Dissipation (Max): 690AW (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 365 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9480 pF @ 25 V
Produkt ist nicht verfügbar
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APT1204R7BFLLG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT1204R7BFLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 3.5A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1.75A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 25 V
auf Bestellung 43 Stücke:
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APT12M80B 6618-apt12m80b-apt12m80s-datasheet
APT12M80B
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 6A, 10V
Power Dissipation (Max): 335W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Produkt ist nicht verfügbar
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APT13F120B 6621-apt13f120b-apt13f120s-datasheet
APT13F120B
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 7A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 25 V
auf Bestellung 181 Stücke:
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1+17.88 EUR
100+14.51 EUR
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APT13GP120BDQ1G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT13GP120BDQ1G
Hersteller: Microchip Technology
Description: IGBT PT 1200V 41A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 9ns/28ns
Switching Energy: 115µJ (on), 165µJ (off)
Test Condition: 600V, 13A, 5Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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APT13GP120BG 6622-apt13gp120bg-apt13gp120sg-datasheet
APT13GP120BG
Hersteller: Microchip Technology
Description: IGBT PT 1200V 41A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 9ns/28ns
Switching Energy: 115µJ (on), 165µJ (off)
Test Condition: 600V, 13A, 5Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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APT14F100B High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT14F100B
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 7A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V
auf Bestellung 69 Stücke:
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APT14M120B 6629-apt14m120bg-apt14m120sg-datasheet
APT14M120B
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 7A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 25 V
auf Bestellung 201 Stücke:
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Anzahl Preis
2+14.04 EUR
100+11.41 EUR
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APT150GN120J APT150GN120J_B.pdf
APT150GN120J
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 215A 625W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 215 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 625 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 9.5 nF @ 25 V
auf Bestellung 413 Stücke:
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Anzahl Preis
1+72.14 EUR
100+58.56 EUR
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APT150GN60J 5739-apt150gn60j-datasheet
APT150GN60J
Hersteller: Microchip Technology
Description: IGBT MOD 600V 220A 536W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 536 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 9.2 nF @ 25 V
Produkt ist nicht verfügbar
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APT150GN60JDQ4 5740-apt150gn60jdq4-datasheet
APT150GN60JDQ4
Hersteller: Microchip Technology
Description: IGBT MOD 600V 220A 536W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 536 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.2 nF @ 25 V
auf Bestellung 18 Stücke:
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Anzahl Preis
1+60.49 EUR
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APT15D100BCTG 5745-apt15d100bctg-datasheet
APT15D100BCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 1000V 15A TO247
Produkt ist nicht verfügbar
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APT15D100BG 5744-apt15d100bg-datasheet
APT15D100BG
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 15A TO247
auf Bestellung 288 Stücke:
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4+4.73 EUR
100+4.37 EUR
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APT15D100BHBG 5746-apt15d100bhbg-datasheet
APT15D100BHBG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 1000V 15A TO247
Produkt ist nicht verfügbar
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APT15D100KG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT15D100KG
Hersteller: Microchip Technology
Description: DIODE STD 1000V 15A TO220 [K]
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 260 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
auf Bestellung 277 Stücke:
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Anzahl Preis
5+3.64 EUR
100+2.94 EUR
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APT15D120KG 123643-apt15d120kg-datasheet
APT15D120KG
Hersteller: Microchip Technology
Description: DIODE GP 1.2KV 15A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 260 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
auf Bestellung 255 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.5 EUR
100+2.68 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
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Description: DIODE ARRAY GP 400V 15A TO247
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