Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (336332) > Seite 375 nach 5606
Foto | Bezeichnung | Hersteller | Beschreibung |
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SY58605UMG-TR | Microchip Technology |
Description: IC CLK BUFFER 1:1 3GHZ 8MLF Packaging: Tape & Reel (TR) Package / Case: 8-VFDFN Exposed Pad, 8-MLF® Number of Circuits: 1 Mounting Type: Surface Mount Output: LVDS Type: Buffer/Driver Input: CML, LVDS, LVPECL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.375V ~ 2.625V Ratio - Input:Output: 1:1 Differential - Input:Output: Yes/Yes Supplier Device Package: 8-MLF® (2x2) Frequency - Max: 3 GHz |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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SY58606UMG | Microchip Technology | Description: IC CLK BUFFER 1:2 3GHZ 16MLF |
auf Bestellung 369 Stücke: Lieferzeit 21-28 Tag (e) |
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SY58607UMG | Microchip Technology | Description: IC CLK BUFFER 1:2 3GHZ 16MLF |
auf Bestellung 159 Stücke: Lieferzeit 21-28 Tag (e) |
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SY89645LK4G | Microchip Technology |
Description: IC CLK BUFFER 1:4 650MHZ 20TSSOP Packaging: Tube Package / Case: 20-TSSOP (0.173", 4.40mm Width) Number of Circuits: 1 Mounting Type: Surface Mount Output: LVDS Type: Fanout Buffer (Distribution) Input: LVCMOS, LVTTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.135V ~ 3.465V Ratio - Input:Output: 1:4 Differential - Input:Output: No/Yes Supplier Device Package: 20-TSSOP Part Status: Active Frequency - Max: 650 MHz |
auf Bestellung 1243 Stücke: Lieferzeit 21-28 Tag (e) |
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SY88289ALMG | Microchip Technology | Description: IC POST AMP 3.3V 3.2GBPS 16-MLF |
Produkt ist nicht verfügbar |
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SY88289CLMG | Microchip Technology | Description: IC POST AMP 3.3V 3.2GBPS 16-MLF |
Produkt ist nicht verfügbar |
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SY88345BLEY | Microchip Technology | Description: IC POST AMP 3.3V 3.2GBPS 10-MSOP |
Produkt ist nicht verfügbar |
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MIC4722YML-TR | Microchip Technology |
Description: IC REG BUCK ADJUSTABLE 3A 12MLF Packaging: Cut Tape (CT) Package / Case: 12-VFDFN Exposed Pad, 12-MLF® Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 3A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 2.7MHz Voltage - Input (Max): 5.5V Topology: Buck Supplier Device Package: 12-MLF™ (4x4) Synchronous Rectifier: No Voltage - Output (Max): 5.5V Voltage - Input (Min): 2.7V Voltage - Output (Min/Fixed): 1V |
Produkt ist nicht verfügbar |
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MIC5301-2.85YD5-TR | Microchip Technology | Description: IC REG LIN 2.85V 150MA TSOT23-5 |
auf Bestellung 1149 Stücke: Lieferzeit 21-28 Tag (e) |
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SY58603UMG-TR | Microchip Technology |
Description: IC CLK BUFFER 1:1 3GHZ 8MLF Packaging: Cut Tape (CT) Package / Case: 8-VFDFN Exposed Pad, 8-MLF® Number of Circuits: 1 Mounting Type: Surface Mount Output: CML Type: Buffer/Driver Input: CML, LVDS, LVPECL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.375V ~ 3.6V Ratio - Input:Output: 1:1 Differential - Input:Output: Yes/Yes Supplier Device Package: 8-MLF® (2x2) Frequency - Max: 3 GHz |
auf Bestellung 1730 Stücke: Lieferzeit 21-28 Tag (e) |
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SY58604UMG-TR | Microchip Technology |
Description: IC CLK BUFFER 1:1 3GHZ 8MLF Packaging: Cut Tape (CT) Package / Case: 8-VFDFN Exposed Pad, 8-MLF® Number of Circuits: 1 Mounting Type: Surface Mount Output: LVPECL Type: Buffer/Driver Input: CML, LVDS, LVPECL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.375V ~ 3.6V Ratio - Input:Output: 1:1 Differential - Input:Output: Yes/Yes Supplier Device Package: 8-MLF® (2x2) Part Status: Active Frequency - Max: 3 GHz |
auf Bestellung 3243 Stücke: Lieferzeit 21-28 Tag (e) |
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SY58605UMG-TR | Microchip Technology |
Description: IC CLK BUFFER 1:1 3GHZ 8MLF Packaging: Cut Tape (CT) Package / Case: 8-VFDFN Exposed Pad, 8-MLF® Number of Circuits: 1 Mounting Type: Surface Mount Output: LVDS Type: Buffer/Driver Input: CML, LVDS, LVPECL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.375V ~ 2.625V Ratio - Input:Output: 1:1 Differential - Input:Output: Yes/Yes Supplier Device Package: 8-MLF® (2x2) Frequency - Max: 3 GHz |
auf Bestellung 3360 Stücke: Lieferzeit 21-28 Tag (e) |
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KSZ8893MQL-EVAL | Microchip Technology | Description: EVAL KIT EXPERIMENTAL KSZ8893MQL |
Produkt ist nicht verfügbar |
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APT14M100B | Microchip Technology |
Description: MOSFET N-CH 1000V 14A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 7A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT15DQ100KG | Microchip Technology | Description: DIODE GEN PURP 1KV 15A TO220 |
Produkt ist nicht verfügbar |
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APT15DQ60KG | Microchip Technology |
Description: DIODE GP 600V 15A TO220 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 19 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220 [K] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 15 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
auf Bestellung 1275 Stücke: Lieferzeit 21-28 Tag (e) |
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APT15GP60BDQ1G | Microchip Technology |
Description: IGBT PT 600V 56A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A Supplier Device Package: TO-247 [B] IGBT Type: PT Td (on/off) @ 25°C: 8ns/29ns Switching Energy: 130µJ (on), 120µJ (off) Test Condition: 400V, 15A, 5Ohm, 15V Gate Charge: 55 nC Part Status: Active Current - Collector (Ic) (Max): 56 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 65 A Power - Max: 250 W |
auf Bestellung 107 Stücke: Lieferzeit 21-28 Tag (e) |
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APT24F50B | Microchip Technology | Description: MOSFET N-CH 500V 24A TO247 |
Produkt ist nicht verfügbar |
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APT30DQ100BG | Microchip Technology |
Description: DIODE GEN PURP 1KV 30A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 295 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
auf Bestellung 359 Stücke: Lieferzeit 21-28 Tag (e) |
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APT30DQ60BG | Microchip Technology |
Description: DIODE GP 600V 30A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
auf Bestellung 245 Stücke: Lieferzeit 21-28 Tag (e) |
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APT30F50B | Microchip Technology |
Description: MOSFET N-CH 500V 30A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 14A, 10V Power Dissipation (Max): 415W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4525 pF @ 25 V |
auf Bestellung 86 Stücke: Lieferzeit 21-28 Tag (e) |
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APT30GP60BG | Microchip Technology |
Description: IGBT PT 600V 100A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Supplier Device Package: TO-247 [B] IGBT Type: PT Td (on/off) @ 25°C: 13ns/55ns Switching Energy: 260µJ (on), 250µJ (off) Test Condition: 400V, 30A, 5Ohm, 15V Gate Charge: 90 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 100 A Power - Max: 463 W |
Produkt ist nicht verfügbar |
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APT30GP60BDQ1G | Microchip Technology |
Description: IGBT PT 600V 100A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Supplier Device Package: TO-247 [B] IGBT Type: PT Td (on/off) @ 25°C: 13ns/55ns Switching Energy: 260µJ (on), 250µJ (off) Test Condition: 400V, 30A, 5Ohm, 15V Gate Charge: 90 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 463 W |
auf Bestellung 130 Stücke: Lieferzeit 21-28 Tag (e) |
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APT31M100L | Microchip Technology |
Description: MOSFET N-CH 1000V 32A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 16A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-264 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V |
auf Bestellung 4 Stücke: Lieferzeit 21-28 Tag (e) |
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APT40GP60B2DQ2G | Microchip Technology |
Description: IGBT 600V 100A 543W TMAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A IGBT Type: PT Td (on/off) @ 25°C: 20ns/64ns Switching Energy: 385µJ (on), 350µJ (off) Test Condition: 400V, 40A, 5Ohm, 15V Gate Charge: 135 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 543 W |
Produkt ist nicht verfügbar |
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APT42F50B | Microchip Technology | Description: MOSFET N-CH 500V 42A TO247 |
auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) |
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APT60DQ120BG | Microchip Technology |
Description: DIODE GP 1.2KV 60A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 320 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 60 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
auf Bestellung 199 Stücke: Lieferzeit 21-28 Tag (e) |
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APT60DQ60BG | Microchip Technology |
Description: DIODE GP 600V 60A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 60 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
auf Bestellung 1206 Stücke: Lieferzeit 21-28 Tag (e) |
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AT89OCD-01 | Microchip Technology |
Description: USB EMULATOR FOR AT8XC51 MCU Packaging: Bulk For Use With/Related Products: AT89C51Rx2 Type: Emulator (In-Circuit/In-System) Contents: Board(s), Cable(s) Part Status: Obsolete |
Produkt ist nicht verfügbar |
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QT60160-ISG | Microchip Technology |
Description: IC TOUCH SENSOR 16KEY 32-QFN Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI Type: Buttons Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 5.25V Current - Supply: 4.6mA Number of Inputs: Up to 16 Resolution: 10 b Supplier Device Package: 32-QFN (5x5) Proximity Detection: No DigiKey Programmable: Not Verified |
auf Bestellung 39000 Stücke: Lieferzeit 21-28 Tag (e) |
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QT1081-ISG | Microchip Technology | Description: SENSOR IC QTOUCH 8 KEY 32QFN |
Produkt ist nicht verfügbar |
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QT60160-ISG | Microchip Technology |
Description: IC TOUCH SENSOR 16KEY 32-QFN Packaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI Type: Buttons Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 5.25V Current - Supply: 4.6mA Number of Inputs: Up to 16 Resolution: 10 b Supplier Device Package: 32-QFN (5x5) Proximity Detection: No DigiKey Programmable: Not Verified |
auf Bestellung 39947 Stücke: Lieferzeit 21-28 Tag (e) |
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QT1081-ISG | Microchip Technology | Description: SENSOR IC QTOUCH 8 KEY 32QFN |
Produkt ist nicht verfügbar |
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JANTX1N5615 | Microchip Technology |
Description: DIODE GEN PURP 200V 1A A-PAK Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 12V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Qualification: MIL-PRF-19500/429 |
Produkt ist nicht verfügbar |
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AT45DB021D-MH-Y | Microchip Technology |
Description: IC FLASH 2MBIT SPI 66MHZ 8UDFN Packaging: Tray Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH Clock Frequency: 66 MHz Memory Format: FLASH Supplier Device Package: 8-UDFN (5x6) Write Cycle Time - Word, Page: 4ms Memory Interface: SPI Memory Organization: 264 Bytes x 1024 pages DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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AT45DB021D-SH-B | Microchip Technology |
Description: IC FLASH 2MBIT SPI 66MHZ 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH Clock Frequency: 66 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 4ms Memory Interface: SPI Memory Organization: 264 Bytes x 1024 pages DigiKey Programmable: Verified |
Produkt ist nicht verfügbar |
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AT45DB021D-SSH-B | Microchip Technology |
Description: IC FLASH 2MBIT SPI 66MHZ 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH Clock Frequency: 66 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 4ms Memory Interface: SPI Memory Organization: 264 Bytes x 1024 pages DigiKey Programmable: Verified |
Produkt ist nicht verfügbar |
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MICRF600DEV1 | Microchip Technology |
Description: KIT DEV RADIOWIRE 902-928MHZ Packaging: Bulk For Use With/Related Products: MICRF600 Frequency: 850MHz ~ 950MHz Type: Transceiver, ISM Supplied Contents: Board(s), Cable(s), Accessories |
auf Bestellung 9 Stücke: Lieferzeit 21-28 Tag (e) |
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MICRF505DEV1 | Microchip Technology |
Description: KIT DEV RADIOWIRE 850-950MHZ Packaging: Bulk For Use With/Related Products: MICRF505 Frequency: 850MHz ~ 950MHz Type: Transceiver, ISM Supplied Contents: Board(s), Cable(s), Accessories Part Status: Discontinued at Digi-Key |
auf Bestellung 5 Stücke: Lieferzeit 21-28 Tag (e) |
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APL1001J | Microchip Technology | Description: MOSFET N-CH 1000V 18A ISOTOP |
Produkt ist nicht verfügbar |
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APL502B2G | Microchip Technology | Description: MOSFET N-CH 500V 58A T-MAX |
Produkt ist nicht verfügbar |
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APL502J | Microchip Technology |
Description: MOSFET N-CH 500V 52A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 26A, 12V Power Dissipation (Max): 568W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: ISOTOP® Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V |
auf Bestellung 113 Stücke: Lieferzeit 21-28 Tag (e) |
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APL502LG | Microchip Technology | Description: MOSFET N-CH 500V 58A TO264 |
auf Bestellung 99 Stücke: Lieferzeit 21-28 Tag (e) |
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APL602B2G | Microchip Technology | Description: MOSFET N-CH 600V 49A T-MAX |
Produkt ist nicht verfügbar |
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APL602J | Microchip Technology | Description: MOSFET N-CH 600V 43A ISOTOP |
Produkt ist nicht verfügbar |
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APL602LG | Microchip Technology | Description: MOSFET N-CH 600V 49A TO264 |
Produkt ist nicht verfügbar |
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APT10M25BVRG | Microchip Technology |
Description: MOSFET N-CH 100V 75A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 [B] Part Status: Active Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT11F80B | Microchip Technology |
Description: MOSFET N-CH 800V 12A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V Power Dissipation (Max): 337W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2471 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT11N80BC3G | Microchip Technology |
Description: MOSFET N-CH 800V 11A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 7.1A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 680µA Supplier Device Package: TO-247 [B] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 25 V |
auf Bestellung 90 Stücke: Lieferzeit 21-28 Tag (e) |
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APT1201R2BFLLG | Microchip Technology |
Description: MOSFET N-CH 1200V 12A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 6A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V |
auf Bestellung 109 Stücke: Lieferzeit 21-28 Tag (e) |
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APT12031JFLL | Microchip Technology | Description: MOSFET N-CH 1200V 30A SOT-227 |
Produkt ist nicht verfügbar |
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APT1204R7BFLLG | Microchip Technology |
Description: MOSFET N-CH 1200V 3.5A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1.75A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 25 V |
auf Bestellung 31 Stücke: Lieferzeit 21-28 Tag (e) |
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APT12M80B | Microchip Technology |
Description: MOSFET N-CH 800V 13A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 6A, 10V Power Dissipation (Max): 335W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT13F120B | Microchip Technology |
Description: MOSFET N-CH 1200V 14A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 7A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 25 V |
auf Bestellung 223 Stücke: Lieferzeit 21-28 Tag (e) |
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APT13GP120BDQ1G | Microchip Technology | Description: IGBT 1200V 41A 250W TO247 |
Produkt ist nicht verfügbar |
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APT13GP120BG | Microchip Technology | Description: IGBT 1200V 41A 250W TO247 |
Produkt ist nicht verfügbar |
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APT14F100B | Microchip Technology |
Description: MOSFET N-CH 1000V 14A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 7A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V |
auf Bestellung 26 Stücke: Lieferzeit 21-28 Tag (e) |
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APT14M120B | Microchip Technology |
Description: MOSFET N-CH 1200V 14A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 7A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT150GN120J | Microchip Technology |
Description: IGBT MOD 1200V 215A 625W ISOTOP Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 215 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 625 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 9.5 nF @ 25 V |
auf Bestellung 123 Stücke: Lieferzeit 21-28 Tag (e) |
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APT150GN60J | Microchip Technology |
Description: IGBT MOD 600V 220A 536W ISOTOP Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 150A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 220 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 536 W Current - Collector Cutoff (Max): 25 µA Input Capacitance (Cies) @ Vce: 9.2 nF @ 25 V |
Produkt ist nicht verfügbar |
SY58605UMG-TR |
Hersteller: Microchip Technology
Description: IC CLK BUFFER 1:1 3GHZ 8MLF
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVDS
Type: Buffer/Driver
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 2.625V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 8-MLF® (2x2)
Frequency - Max: 3 GHz
Description: IC CLK BUFFER 1:1 3GHZ 8MLF
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVDS
Type: Buffer/Driver
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 2.625V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 8-MLF® (2x2)
Frequency - Max: 3 GHz
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 11.12 EUR |
SY58606UMG |
Hersteller: Microchip Technology
Description: IC CLK BUFFER 1:2 3GHZ 16MLF
Description: IC CLK BUFFER 1:2 3GHZ 16MLF
auf Bestellung 369 Stücke:
Lieferzeit 21-28 Tag (e)SY58607UMG |
Hersteller: Microchip Technology
Description: IC CLK BUFFER 1:2 3GHZ 16MLF
Description: IC CLK BUFFER 1:2 3GHZ 16MLF
auf Bestellung 159 Stücke:
Lieferzeit 21-28 Tag (e)SY89645LK4G |
Hersteller: Microchip Technology
Description: IC CLK BUFFER 1:4 650MHZ 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVDS
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/Yes
Supplier Device Package: 20-TSSOP
Part Status: Active
Frequency - Max: 650 MHz
Description: IC CLK BUFFER 1:4 650MHZ 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVDS
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/Yes
Supplier Device Package: 20-TSSOP
Part Status: Active
Frequency - Max: 650 MHz
auf Bestellung 1243 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 11.49 EUR |
25+ | 9.56 EUR |
100+ | 8.69 EUR |
SY88289ALMG |
Hersteller: Microchip Technology
Description: IC POST AMP 3.3V 3.2GBPS 16-MLF
Description: IC POST AMP 3.3V 3.2GBPS 16-MLF
Produkt ist nicht verfügbar
SY88289CLMG |
Hersteller: Microchip Technology
Description: IC POST AMP 3.3V 3.2GBPS 16-MLF
Description: IC POST AMP 3.3V 3.2GBPS 16-MLF
Produkt ist nicht verfügbar
SY88345BLEY |
Hersteller: Microchip Technology
Description: IC POST AMP 3.3V 3.2GBPS 10-MSOP
Description: IC POST AMP 3.3V 3.2GBPS 10-MSOP
Produkt ist nicht verfügbar
MIC4722YML-TR |
Hersteller: Microchip Technology
Description: IC REG BUCK ADJUSTABLE 3A 12MLF
Packaging: Cut Tape (CT)
Package / Case: 12-VFDFN Exposed Pad, 12-MLF®
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.7MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 12-MLF™ (4x4)
Synchronous Rectifier: No
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 1V
Description: IC REG BUCK ADJUSTABLE 3A 12MLF
Packaging: Cut Tape (CT)
Package / Case: 12-VFDFN Exposed Pad, 12-MLF®
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.7MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 12-MLF™ (4x4)
Synchronous Rectifier: No
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 1V
Produkt ist nicht verfügbar
MIC5301-2.85YD5-TR |
Hersteller: Microchip Technology
Description: IC REG LIN 2.85V 150MA TSOT23-5
Description: IC REG LIN 2.85V 150MA TSOT23-5
auf Bestellung 1149 Stücke:
Lieferzeit 21-28 Tag (e)SY58603UMG-TR |
Hersteller: Microchip Technology
Description: IC CLK BUFFER 1:1 3GHZ 8MLF
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Number of Circuits: 1
Mounting Type: Surface Mount
Output: CML
Type: Buffer/Driver
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 8-MLF® (2x2)
Frequency - Max: 3 GHz
Description: IC CLK BUFFER 1:1 3GHZ 8MLF
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Number of Circuits: 1
Mounting Type: Surface Mount
Output: CML
Type: Buffer/Driver
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 8-MLF® (2x2)
Frequency - Max: 3 GHz
auf Bestellung 1730 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 14.72 EUR |
25+ | 12.22 EUR |
100+ | 11.12 EUR |
SY58604UMG-TR |
Hersteller: Microchip Technology
Description: IC CLK BUFFER 1:1 3GHZ 8MLF
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Buffer/Driver
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 8-MLF® (2x2)
Part Status: Active
Frequency - Max: 3 GHz
Description: IC CLK BUFFER 1:1 3GHZ 8MLF
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Buffer/Driver
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 8-MLF® (2x2)
Part Status: Active
Frequency - Max: 3 GHz
auf Bestellung 3243 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 15.94 EUR |
25+ | 13.23 EUR |
100+ | 12.04 EUR |
SY58605UMG-TR |
Hersteller: Microchip Technology
Description: IC CLK BUFFER 1:1 3GHZ 8MLF
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVDS
Type: Buffer/Driver
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 2.625V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 8-MLF® (2x2)
Frequency - Max: 3 GHz
Description: IC CLK BUFFER 1:1 3GHZ 8MLF
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVDS
Type: Buffer/Driver
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 2.625V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 8-MLF® (2x2)
Frequency - Max: 3 GHz
auf Bestellung 3360 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 14.72 EUR |
25+ | 12.22 EUR |
100+ | 11.12 EUR |
KSZ8893MQL-EVAL |
Hersteller: Microchip Technology
Description: EVAL KIT EXPERIMENTAL KSZ8893MQL
Description: EVAL KIT EXPERIMENTAL KSZ8893MQL
Produkt ist nicht verfügbar
APT14M100B |
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 7A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V
Description: MOSFET N-CH 1000V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 7A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V
Produkt ist nicht verfügbar
APT15DQ100KG |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 15A TO220
Description: DIODE GEN PURP 1KV 15A TO220
Produkt ist nicht verfügbar
APT15DQ60KG |
Hersteller: Microchip Technology
Description: DIODE GP 600V 15A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 19 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 15 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE GP 600V 15A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 19 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 15 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
auf Bestellung 1275 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 1.79 EUR |
100+ | 1.68 EUR |
APT15GP60BDQ1G |
Hersteller: Microchip Technology
Description: IGBT PT 600V 56A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 8ns/29ns
Switching Energy: 130µJ (on), 120µJ (off)
Test Condition: 400V, 15A, 5Ohm, 15V
Gate Charge: 55 nC
Part Status: Active
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 65 A
Power - Max: 250 W
Description: IGBT PT 600V 56A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 8ns/29ns
Switching Energy: 130µJ (on), 120µJ (off)
Test Condition: 400V, 15A, 5Ohm, 15V
Gate Charge: 55 nC
Part Status: Active
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 65 A
Power - Max: 250 W
auf Bestellung 107 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 12.97 EUR |
100+ | 10.53 EUR |
APT24F50B |
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 24A TO247
Description: MOSFET N-CH 500V 24A TO247
Produkt ist nicht verfügbar
APT30DQ100BG |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 295 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Description: DIODE GEN PURP 1KV 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 295 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
auf Bestellung 359 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 3.8 EUR |
100+ | 3.09 EUR |
APT30DQ60BG |
Hersteller: Microchip Technology
Description: DIODE GP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE GP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
auf Bestellung 245 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 3.3 EUR |
100+ | 2.67 EUR |
APT30F50B |
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 14A, 10V
Power Dissipation (Max): 415W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4525 pF @ 25 V
Description: MOSFET N-CH 500V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 14A, 10V
Power Dissipation (Max): 415W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4525 pF @ 25 V
auf Bestellung 86 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 12.87 EUR |
APT30GP60BG |
Hersteller: Microchip Technology
Description: IGBT PT 600V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/55ns
Switching Energy: 260µJ (on), 250µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 463 W
Description: IGBT PT 600V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/55ns
Switching Energy: 260µJ (on), 250µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 463 W
Produkt ist nicht verfügbar
APT30GP60BDQ1G |
Hersteller: Microchip Technology
Description: IGBT PT 600V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/55ns
Switching Energy: 260µJ (on), 250µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 463 W
Description: IGBT PT 600V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/55ns
Switching Energy: 260µJ (on), 250µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 463 W
auf Bestellung 130 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 20.85 EUR |
100+ | 16.96 EUR |
APT31M100L |
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 32A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 16A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
Description: MOSFET N-CH 1000V 32A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 16A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 46.54 EUR |
APT40GP60B2DQ2G |
Hersteller: Microchip Technology
Description: IGBT 600V 100A 543W TMAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/64ns
Switching Energy: 385µJ (on), 350µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 135 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 543 W
Description: IGBT 600V 100A 543W TMAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/64ns
Switching Energy: 385µJ (on), 350µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 135 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 543 W
Produkt ist nicht verfügbar
APT42F50B |
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 42A TO247
Description: MOSFET N-CH 500V 42A TO247
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)APT60DQ120BG |
Hersteller: Microchip Technology
Description: DIODE GP 1.2KV 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GP 1.2KV 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 199 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 5.56 EUR |
100+ | 4.54 EUR |
APT60DQ60BG |
Hersteller: Microchip Technology
Description: DIODE GP 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE GP 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
auf Bestellung 1206 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 4.42 EUR |
100+ | 3.59 EUR |
AT89OCD-01 |
Hersteller: Microchip Technology
Description: USB EMULATOR FOR AT8XC51 MCU
Packaging: Bulk
For Use With/Related Products: AT89C51Rx2
Type: Emulator (In-Circuit/In-System)
Contents: Board(s), Cable(s)
Part Status: Obsolete
Description: USB EMULATOR FOR AT8XC51 MCU
Packaging: Bulk
For Use With/Related Products: AT89C51Rx2
Type: Emulator (In-Circuit/In-System)
Contents: Board(s), Cable(s)
Part Status: Obsolete
Produkt ist nicht verfügbar
QT60160-ISG |
Hersteller: Microchip Technology
Description: IC TOUCH SENSOR 16KEY 32-QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.25V
Current - Supply: 4.6mA
Number of Inputs: Up to 16
Resolution: 10 b
Supplier Device Package: 32-QFN (5x5)
Proximity Detection: No
DigiKey Programmable: Not Verified
Description: IC TOUCH SENSOR 16KEY 32-QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.25V
Current - Supply: 4.6mA
Number of Inputs: Up to 16
Resolution: 10 b
Supplier Device Package: 32-QFN (5x5)
Proximity Detection: No
DigiKey Programmable: Not Verified
auf Bestellung 39000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 5.55 EUR |
QT1081-ISG |
Hersteller: Microchip Technology
Description: SENSOR IC QTOUCH 8 KEY 32QFN
Description: SENSOR IC QTOUCH 8 KEY 32QFN
Produkt ist nicht verfügbar
QT60160-ISG |
Hersteller: Microchip Technology
Description: IC TOUCH SENSOR 16KEY 32-QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.25V
Current - Supply: 4.6mA
Number of Inputs: Up to 16
Resolution: 10 b
Supplier Device Package: 32-QFN (5x5)
Proximity Detection: No
DigiKey Programmable: Not Verified
Description: IC TOUCH SENSOR 16KEY 32-QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.25V
Current - Supply: 4.6mA
Number of Inputs: Up to 16
Resolution: 10 b
Supplier Device Package: 32-QFN (5x5)
Proximity Detection: No
DigiKey Programmable: Not Verified
auf Bestellung 39947 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 6.68 EUR |
25+ | 6.15 EUR |
100+ | 5.55 EUR |
QT1081-ISG |
Hersteller: Microchip Technology
Description: SENSOR IC QTOUCH 8 KEY 32QFN
Description: SENSOR IC QTOUCH 8 KEY 32QFN
Produkt ist nicht verfügbar
JANTX1N5615 |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 1A A-PAK
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: MIL-PRF-19500/429
Description: DIODE GEN PURP 200V 1A A-PAK
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: MIL-PRF-19500/429
Produkt ist nicht verfügbar
AT45DB021D-MH-Y |
Hersteller: Microchip Technology
Description: IC FLASH 2MBIT SPI 66MHZ 8UDFN
Packaging: Tray
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 8-UDFN (5x6)
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Memory Organization: 264 Bytes x 1024 pages
DigiKey Programmable: Not Verified
Description: IC FLASH 2MBIT SPI 66MHZ 8UDFN
Packaging: Tray
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 8-UDFN (5x6)
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Memory Organization: 264 Bytes x 1024 pages
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
AT45DB021D-SH-B |
Hersteller: Microchip Technology
Description: IC FLASH 2MBIT SPI 66MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Memory Organization: 264 Bytes x 1024 pages
DigiKey Programmable: Verified
Description: IC FLASH 2MBIT SPI 66MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Memory Organization: 264 Bytes x 1024 pages
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
AT45DB021D-SSH-B |
Hersteller: Microchip Technology
Description: IC FLASH 2MBIT SPI 66MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Memory Organization: 264 Bytes x 1024 pages
DigiKey Programmable: Verified
Description: IC FLASH 2MBIT SPI 66MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Memory Organization: 264 Bytes x 1024 pages
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
MICRF600DEV1 |
Hersteller: Microchip Technology
Description: KIT DEV RADIOWIRE 902-928MHZ
Packaging: Bulk
For Use With/Related Products: MICRF600
Frequency: 850MHz ~ 950MHz
Type: Transceiver, ISM
Supplied Contents: Board(s), Cable(s), Accessories
Description: KIT DEV RADIOWIRE 902-928MHZ
Packaging: Bulk
For Use With/Related Products: MICRF600
Frequency: 850MHz ~ 950MHz
Type: Transceiver, ISM
Supplied Contents: Board(s), Cable(s), Accessories
auf Bestellung 9 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 583.57 EUR |
MICRF505DEV1 |
Hersteller: Microchip Technology
Description: KIT DEV RADIOWIRE 850-950MHZ
Packaging: Bulk
For Use With/Related Products: MICRF505
Frequency: 850MHz ~ 950MHz
Type: Transceiver, ISM
Supplied Contents: Board(s), Cable(s), Accessories
Part Status: Discontinued at Digi-Key
Description: KIT DEV RADIOWIRE 850-950MHZ
Packaging: Bulk
For Use With/Related Products: MICRF505
Frequency: 850MHz ~ 950MHz
Type: Transceiver, ISM
Supplied Contents: Board(s), Cable(s), Accessories
Part Status: Discontinued at Digi-Key
auf Bestellung 5 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 592.8 EUR |
APL1001J |
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 18A ISOTOP
Description: MOSFET N-CH 1000V 18A ISOTOP
Produkt ist nicht verfügbar
APL502B2G |
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 58A T-MAX
Description: MOSFET N-CH 500V 58A T-MAX
Produkt ist nicht verfügbar
APL502J |
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 52A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 26A, 12V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Description: MOSFET N-CH 500V 52A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 26A, 12V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
auf Bestellung 113 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 142.77 EUR |
100+ | 131.97 EUR |
APL502LG |
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 58A TO264
Description: MOSFET N-CH 500V 58A TO264
auf Bestellung 99 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 127.71 EUR |
APL602B2G |
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 49A T-MAX
Description: MOSFET N-CH 600V 49A T-MAX
Produkt ist nicht verfügbar
APL602J |
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 43A ISOTOP
Description: MOSFET N-CH 600V 43A ISOTOP
Produkt ist nicht verfügbar
APL602LG |
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 49A TO264
Description: MOSFET N-CH 600V 49A TO264
Produkt ist nicht verfügbar
APT10M25BVRG |
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 75A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V
Description: MOSFET N-CH 100V 75A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V
Produkt ist nicht verfügbar
APT11F80B |
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 337W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2471 pF @ 25 V
Description: MOSFET N-CH 800V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 337W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2471 pF @ 25 V
Produkt ist nicht verfügbar
APT11N80BC3G |
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 11A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.1A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 680µA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 25 V
Description: MOSFET N-CH 800V 11A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.1A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 680µA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 25 V
auf Bestellung 90 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 10.74 EUR |
APT1201R2BFLLG |
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 6A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V
Description: MOSFET N-CH 1200V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 6A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V
auf Bestellung 109 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 64.58 EUR |
100+ | 52.43 EUR |
APT12031JFLL |
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 30A SOT-227
Description: MOSFET N-CH 1200V 30A SOT-227
Produkt ist nicht verfügbar
APT1204R7BFLLG |
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 3.5A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1.75A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 25 V
Description: MOSFET N-CH 1200V 3.5A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1.75A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 25 V
auf Bestellung 31 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 26.26 EUR |
APT12M80B |
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 6A, 10V
Power Dissipation (Max): 335W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Description: MOSFET N-CH 800V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 6A, 10V
Power Dissipation (Max): 335W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Produkt ist nicht verfügbar
APT13F120B |
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 7A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 25 V
Description: MOSFET N-CH 1200V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 7A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 25 V
auf Bestellung 223 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 25.48 EUR |
100+ | 20.68 EUR |
APT13GP120BDQ1G |
Hersteller: Microchip Technology
Description: IGBT 1200V 41A 250W TO247
Description: IGBT 1200V 41A 250W TO247
Produkt ist nicht verfügbar
APT13GP120BG |
Hersteller: Microchip Technology
Description: IGBT 1200V 41A 250W TO247
Description: IGBT 1200V 41A 250W TO247
Produkt ist nicht verfügbar
APT14F100B |
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 7A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V
Description: MOSFET N-CH 1000V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 7A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V
auf Bestellung 26 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 19.32 EUR |
APT14M120B |
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 7A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 25 V
Description: MOSFET N-CH 1200V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 7A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 25 V
Produkt ist nicht verfügbar
APT150GN120J |
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 215A 625W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 215 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 625 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 9.5 nF @ 25 V
Description: IGBT MOD 1200V 215A 625W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 215 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 625 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 9.5 nF @ 25 V
auf Bestellung 123 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 112.79 EUR |
100+ | 91.55 EUR |
APT150GN60J |
Hersteller: Microchip Technology
Description: IGBT MOD 600V 220A 536W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 536 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 9.2 nF @ 25 V
Description: IGBT MOD 600V 220A 536W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 536 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 9.2 nF @ 25 V
Produkt ist nicht verfügbar