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APT34N80LC3G APT34N80LC3G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 800V 34A TO264
Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT35GN120BG APT35GN120BG Microchip Technology 6968-apt35gn120bg-apt35gn120sg-datasheet Description: IGBT NPT FS 1200V 94A TO247
Td (on/off) @ 25°C: 24ns/300ns
IGBT Type: NPT, Trench Field Stop
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 379 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 94 A
Part Status: Active
Gate Charge: 220 nC
Test Condition: 800V, 35A, 2.2Ohm, 15V
Switching Energy: 2.315mJ (off)
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APT35GN120L2DQ2G APT35GN120L2DQ2G Microchip Technology 6245-apt35gn120l2dq2g-datasheet Description: IGBT 1200V 94A 379W TO264
Power - Max: 379 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 94 A
Part Status: Active
Gate Charge: 220 nC
Test Condition: 800V, 35A, 2.2Ohm, 15V
Switching Energy: 2.315mJ (off)
Td (on/off) @ 25°C: 24ns/300ns
IGBT Type: NPT, Trench Field Stop
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT35GP120B2DQ2G APT35GP120B2DQ2G Microchip Technology 6246-apt35gp120b2dq2g-datasheet Description: IGBT PT 1200V 96A
Power - Max: 543 W
Current - Collector Pulsed (Icm): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 96 A
Part Status: Active
Gate Charge: 150 nC
Test Condition: 600V, 35A, 4.3Ohm, 15V
Switching Energy: 750µJ (on), 680µJ (off)
Td (on/off) @ 25°C: 16ns/95ns
IGBT Type: PT
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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APT35GP120BG APT35GP120BG Microchip Technology 6969-apt35gp120bg-datasheet Description: IGBT 1200V 96A 543W TO247
Packaging: Tube
Current - Collector (Ic) (Max): 96 A
Part Status: Active
Gate Charge: 150 nC
Test Condition: 600V, 35A, 5Ohm, 15V
Switching Energy: 750µJ (on), 680µJ (off)
Td (on/off) @ 25°C: 16ns/94ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Power - Max: 543 W
Current - Collector Pulsed (Icm): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
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APT35GP120J APT35GP120J Microchip Technology 123954-apt35gp120j-datasheet Description: IGBT MOD 1200V 64A 284W ISOTOP
Current - Collector (Ic) (Max): 64 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Input Capacitance (Cies) @ Vce: 3.24 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 284 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
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APT35GP120JDQ2 APT35GP120JDQ2 Microchip Technology 123955-apt35gp120jdq2-datasheet Description: IGBT MOD 1200V 64A 284W ISOTOP
Input Capacitance (Cies) @ Vce: 3.24 nF @ 25 V
Current - Collector Cutoff (Max): 350 µA
Power - Max: 284 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 64 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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APT37F50B APT37F50B Microchip Technology 6980-apt37f50b-apt37f50s-datasheet Description: MOSFET N-CH 500V 37A TO247
Input Capacitance (Ciss) (Max) @ Vds: 5710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT37M100B2 APT37M100B2 Microchip Technology 6982-apt37m100b2-apt37m100l-datasheet Description: MOSFET N-CH 1000V 37A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 9835 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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APT37M100L APT37M100L Microchip Technology 6982-apt37m100b2-apt37m100l-datasheet Description: MOSFET N-CH 1000V 37A TO-264
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APT38F80L APT38F80L Microchip Technology APT38F80B2_L_C.pdf Description: MOSFET N-CH 800V 41A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 20A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 (L)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8070 pF @ 25 V
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APT40DQ100BG APT40DQ100BG Microchip Technology APT40DQ100B%2CS%28G%29.pdf Description: DIODE GEN PURP 1KV 40A TO247
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io): 40A
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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APT40DQ120BG APT40DQ120BG Microchip Technology 123686-apt40dq120bg-apt40dq120sg-datasheet Description: DIODE GP 1.2KV 40A TO247
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io): 40A
Technology: Standard
Reverse Recovery Time (trr): 350 ns
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APT40DQ60BCTG APT40DQ60BCTG Microchip Technology 6263-apt40dq60bctg-datasheet Description: DIODE ARRAY GP 600V 40A TO247
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT40DQ60BG APT40DQ60BG Microchip Technology 6262-apt40dq60bg-apt40dq60sg-datasheet Description: DIODE STD 600V 40A TO247 [B]
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io): 40A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-247-2
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APT40GP60BG APT40GP60BG Microchip Technology APT40GP60B_S_D.pdf Description: IGBT PT 600V 100A TO247
Power - Max: 543 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
Gate Charge: 135 nC
Test Condition: 400V, 40A, 5Ohm, 15V
Switching Energy: 385µJ (on), 352µJ (off)
Td (on/off) @ 25°C: 20ns/64ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT40GP60JDQ2 APT40GP60JDQ2 Microchip Technology 6268-apt40gp60jdq2-datasheet Description: IGBT MODULE 600V 86A 284W ISOTOP
Input Capacitance (Cies) @ Vce: 4.61 nF @ 25 V
Current - Collector Cutoff (Max): 500 µA
Power - Max: 284 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 86 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT40GP90B2DQ2G APT40GP90B2DQ2G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT PT 900V 101A
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APT40GP90BG APT40GP90BG Microchip Technology APT40GP90B_A.pdf Description: IGBT PT 900V 100A TO247
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 543 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
Gate Charge: 145 nC
Test Condition: 600V, 40A, 5Ohm, 15V
Switching Energy: 825µJ (off)
Td (on/off) @ 25°C: 16ns/75ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
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APT40GP90JDQ2 APT40GP90JDQ2 Microchip Technology 6272-apt40gp90jdq2-datasheet Description: IGBT MODULE 900V 64A 284W ISOTOP
Current - Collector (Ic) (Max): 64 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Current - Collector Cutoff (Max): 350 µA
Power - Max: 284 W
Voltage - Collector Emitter Breakdown (Max): 900 V
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APT40GP90J APT40GP90J Microchip Technology 6271-apt40gp90j-datasheet Description: IGBT MODULE 900V 68A 284W ISOTOP
Current - Collector Cutoff (Max): 250 µA
Power - Max: 284 W
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 68 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
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APT40GT60BRG APT40GT60BRG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT NPT 600V 80A TO247
Power - Max: 345 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
Gate Charge: 200 nC
Test Condition: 400V, 40A, 5Ohm, 15V
Switching Energy: 828µJ (off)
Td (on/off) @ 25°C: 12ns/124ns
IGBT Type: NPT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT41F100J APT41F100J Microchip Technology APT41F100J_C.pdf Description: MOSFET N-CH 1000V 42A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 33A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 25 V
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APT41M80B2 APT41M80B2 Microchip Technology APT41M80B2_L_C.pdf Description: MOSFET N-CH 800V 43A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8070 pF @ 25 V
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APT41M80L APT41M80L Microchip Technology APT41M80B2_L_C.pdf Description: MOSFET N-CH 800V 43A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 (L)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8070 pF @ 25 V
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APT43M60L APT43M60L Microchip Technology 7040-apt43m60b2-apt43m60l-datasheet Description: MOSFET N-CH 600V 45A TO264
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
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APT44F80B2 APT44F80B2 Microchip Technology 7042-apt44f80b2-datasheet Description: MOSFET N-CH 800V 47A T-MAX
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APT44F80L APT44F80L Microchip Technology 7042-apt44f80b2-datasheet Description: MOSFET N-CH 800V 47A TO264
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 9330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
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APT45GP120B2DQ2G APT45GP120B2DQ2G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT PT 1200V 113A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/100ns
Switching Energy: 900µJ (on), 905µJ (off)
Test Condition: 600V, 45A, 5Ohm, 15V
Gate Charge: 185 nC
Part Status: Active
Current - Collector (Ic) (Max): 113 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 170 A
Power - Max: 625 W
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APT45GP120BG APT45GP120BG Microchip Technology APT45GP120B_C.pdf Description: IGBT PT 1200V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/102ns
Switching Energy: 900µJ (on), 904µJ (off)
Test Condition: 600V, 45A, 5Ohm, 15V
Gate Charge: 185 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 170 A
Power - Max: 625 W
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APT45GP120J APT45GP120J Microchip Technology 6279-apt45gp120j-datasheet Description: IGBT MOD 1200V 75A 329W ISOTOP
Input Capacitance (Cies) @ Vce: 3.94 nF @ 25 V
Current - Collector Cutoff (Max): 500 µA
Power - Max: 329 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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APT45GP120JDQ2 APT45GP120JDQ2 Microchip Technology 6280-apt45gp120jdq2-datasheet Description: IGBT MOD 1200V 75A 329W ISOTOP
Input Capacitance (Cies) @ Vce: 4 nF @ 25 V
Current - Collector Cutoff (Max): 750 µA
Power - Max: 329 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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APT45M100J APT45M100J Microchip Technology 7053-apt45m100j-datasheet Description: MOSFET N-CH 1000V 45A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 960W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 33A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT47M60J APT47M60J Microchip Technology 7064-apt47m60j-datasheet Description: MOSFET N-CH 600V 49A ISOTOP
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APT47N60BC3G APT47N60BC3G Microchip Technology APT47N60B_SC3(G)_F.pdf Description: MOSFET N-CH 600V 47A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
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APT47N60SC3G APT47N60SC3G Microchip Technology APT47N60B_SC3(G)_F.pdf Description: MOSFET N-CH 600V 47A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
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APT48M80B2 APT48M80B2 Microchip Technology 7069-apt48m80b2-datasheet Description: MOSFET N-CH 800V 49A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 9330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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APT48M80L APT48M80L Microchip Technology 7069-apt48m80b2-datasheet Description: MOSFET N-CH 800V 49A TO264
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APT4F120K APT4F120K Microchip Technology APT4F120K.pdf Description: MOSFET N-CH 1200V 4A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 500µA
Power Dissipation (Max): 225W (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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APT4M120K APT4M120K Microchip Technology Description: MOSFET N-CH 1200V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 2A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220 [K]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 25 V
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APT5010B2FLLG APT5010B2FLLG Microchip Technology APT5010%28B2%2CL%29FLL.pdf Description: MOSFET N-CH 500V 46A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
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APT5010B2LLG APT5010B2LLG Microchip Technology APT5010B2_LLL(G)_D.pdf Description: MOSFET N-CH 500V 46A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
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APT5010JLL APT5010JLL Microchip Technology 6291-apt5010jll-datasheet Description: MOSFET N-CH 500V 41A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 100mOhm @ 20.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT5010JVFR APT5010JVFR Microchip Technology APT5010JVFR_B.pdf Description: MOSFET N-CH 500V 44A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 470 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
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APT5010LFLLG APT5010LFLLG Microchip Technology APT5010%28B2%2CL%29FLL.pdf Description: MOSFET N-CH 500V 46A TO264
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT5010LLLG APT5010LLLG Microchip Technology 6287-apt5010b2llg-apt5010lllg-datasheet Description: MOSFET N-CH 500V 46A TO264
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT5014BLLG APT5014BLLG Microchip Technology APT5014B_SLL(G)_B.pdf Description: MOSFET N-CH 500V 35A TO247
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 403W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3261 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
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APT5014SLLG APT5014SLLG Microchip Technology APT5014B_SLL(G)_B.pdf Description: MOSFET N-CH 500V 35A D3PAK
Input Capacitance (Ciss) (Max) @ Vds: 3261 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D3Pak
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 403W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
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APT5016BFLLG APT5016BFLLG Microchip Technology APT5016B_SFLL_C.pdf Description: MOSFET N-CH 500V 30A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 329W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT5016BLLG APT5016BLLG Microchip Technology 6304-apt5016bllg-apt5016sllg-datasheet Description: MOSFET N-CH 500V 30A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 329W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT5018BLLG APT5018BLLG Microchip Technology APT5018_B%2CS_LL.pdf Description: MOSFET N-CH 500V 27A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2596 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT5024BFLLG APT5024BFLLG Microchip Technology 7080-apt5024bfllg-apt5024sfllg-datasheet Description: MOSFET N-CH 500V 22A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Rds On (Max) @ Id, Vgs: 240mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT5024BLLG APT5024BLLG Microchip Technology 6316-apt5024bllg-apt5024sllg-datasheet Description: MOSFET N-CH 500V 22A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 265W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT50GF120B2RG APT50GF120B2RG Microchip Technology 7089-apt50gf120b2g-apt50gf120lrg-datasheet Description: IGBT NPT 1200V 135A
Power - Max: 781 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 135 A
Gate Charge: 340 nC
Test Condition: 800V, 50A, 1Ohm, 15V
Switching Energy: 3.6mJ (on), 2.64mJ (off)
Td (on/off) @ 25°C: 25ns/260ns
IGBT Type: NPT
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Produkt ist nicht verfügbar
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APT50GF120JRDQ3 APT50GF120JRDQ3 Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT MOD 1200V 120A 521W ISOTOP
Input Capacitance (Cies) @ Vce: 5.32 nF @ 25 V
Current - Collector Cutoff (Max): 750 µA
Power - Max: 521 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 120 A
IGBT Type: NPT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 75A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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APT50GF120LRG APT50GF120LRG Microchip Technology 7089-apt50gf120b2g-apt50gf120lrg-datasheet Description: IGBT NPT 1200V 135A TO264
Power - Max: 781 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 135 A
Part Status: Active
Gate Charge: 340 nC
Test Condition: 800V, 50A, 1Ohm, 15V
Switching Energy: 3.6mJ (on), 2.64mJ (off)
Td (on/off) @ 25°C: 25ns/260ns
IGBT Type: NPT
Supplier Device Package: TO-264 [L]
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT50GN120B2G APT50GN120B2G Microchip Technology 6323-apt50gn120b2g-datasheet Description: IGBT NPT FIELD STOP 1200V 134A
Power - Max: 543 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 134 A
Part Status: Active
Gate Charge: 315 nC
Test Condition: 800V, 50A, 2.2Ohm, 15V
Switching Energy: 4495µJ (off)
Td (on/off) @ 25°C: 28ns/320ns
IGBT Type: NPT, Trench Field Stop
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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APT50GN120L2DQ2G APT50GN120L2DQ2G Microchip Technology 6324-apt50gn120l2dq2g-datasheet Description: IGBT NPT FIELD STOP 1200V 134A
Power - Max: 543 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 134 A
Part Status: Active
Gate Charge: 315 nC
Test Condition: 800V, 50A, 2.2Ohm, 15V
Switching Energy: 4495µJ (off)
Td (on/off) @ 25°C: 28ns/320ns
IGBT Type: NPT, Trench Field Stop
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT50GN60BDQ2G APT50GN60BDQ2G Microchip Technology 7095-apt50gn60bdq2g-apt50gn60sdq2g-datasheet Description: IGBT TRENCH FS 600V 107A TO247
Power - Max: 366 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 107 A
Part Status: Active
Gate Charge: 325 nC
Test Condition: 400V, 50A, 4.3Ohm, 15V
Switching Energy: 1185µJ (on), 1565µJ (off)
Td (on/off) @ 25°C: 20ns/230ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT50GN60BG APT50GN60BG Microchip Technology 7094-apt50gn60bg-apt50gn60sg-datasheet Description: IGBT TRENCH FS 600V 107A TO247
Power - Max: 366 W
Current - Collector Pulsed (Icm): 150 A
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 107 A
Part Status: Active
Gate Charge: 325 nC
Test Condition: 400V, 50A, 4.3Ohm, 15V
Switching Energy: 1185µJ (on), 1565µJ (off)
Td (on/off) @ 25°C: 20ns/230ns
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APT34N80LC3G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT34N80LC3G
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 34A TO264
Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT35GN120BG 6968-apt35gn120bg-apt35gn120sg-datasheet
APT35GN120BG
Hersteller: Microchip Technology
Description: IGBT NPT FS 1200V 94A TO247
Td (on/off) @ 25°C: 24ns/300ns
IGBT Type: NPT, Trench Field Stop
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 379 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 94 A
Part Status: Active
Gate Charge: 220 nC
Test Condition: 800V, 35A, 2.2Ohm, 15V
Switching Energy: 2.315mJ (off)
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APT35GN120L2DQ2G 6245-apt35gn120l2dq2g-datasheet
APT35GN120L2DQ2G
Hersteller: Microchip Technology
Description: IGBT 1200V 94A 379W TO264
Power - Max: 379 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 94 A
Part Status: Active
Gate Charge: 220 nC
Test Condition: 800V, 35A, 2.2Ohm, 15V
Switching Energy: 2.315mJ (off)
Td (on/off) @ 25°C: 24ns/300ns
IGBT Type: NPT, Trench Field Stop
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT35GP120B2DQ2G 6246-apt35gp120b2dq2g-datasheet
APT35GP120B2DQ2G
Hersteller: Microchip Technology
Description: IGBT PT 1200V 96A
Power - Max: 543 W
Current - Collector Pulsed (Icm): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 96 A
Part Status: Active
Gate Charge: 150 nC
Test Condition: 600V, 35A, 4.3Ohm, 15V
Switching Energy: 750µJ (on), 680µJ (off)
Td (on/off) @ 25°C: 16ns/95ns
IGBT Type: PT
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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APT35GP120BG 6969-apt35gp120bg-datasheet
APT35GP120BG
Hersteller: Microchip Technology
Description: IGBT 1200V 96A 543W TO247
Packaging: Tube
Current - Collector (Ic) (Max): 96 A
Part Status: Active
Gate Charge: 150 nC
Test Condition: 600V, 35A, 5Ohm, 15V
Switching Energy: 750µJ (on), 680µJ (off)
Td (on/off) @ 25°C: 16ns/94ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Power - Max: 543 W
Current - Collector Pulsed (Icm): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
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APT35GP120J 123954-apt35gp120j-datasheet
APT35GP120J
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 64A 284W ISOTOP
Current - Collector (Ic) (Max): 64 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Input Capacitance (Cies) @ Vce: 3.24 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 284 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
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APT35GP120JDQ2 123955-apt35gp120jdq2-datasheet
APT35GP120JDQ2
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 64A 284W ISOTOP
Input Capacitance (Cies) @ Vce: 3.24 nF @ 25 V
Current - Collector Cutoff (Max): 350 µA
Power - Max: 284 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 64 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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APT37F50B 6980-apt37f50b-apt37f50s-datasheet
APT37F50B
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 37A TO247
Input Capacitance (Ciss) (Max) @ Vds: 5710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT37M100B2 6982-apt37m100b2-apt37m100l-datasheet
APT37M100B2
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 37A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 9835 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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APT37M100L 6982-apt37m100b2-apt37m100l-datasheet
APT37M100L
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 37A TO-264
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APT38F80L APT38F80B2_L_C.pdf
APT38F80L
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 41A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 20A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 (L)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8070 pF @ 25 V
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APT40DQ100BG APT40DQ100B%2CS%28G%29.pdf
APT40DQ100BG
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 40A TO247
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io): 40A
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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APT40DQ120BG 123686-apt40dq120bg-apt40dq120sg-datasheet
APT40DQ120BG
Hersteller: Microchip Technology
Description: DIODE GP 1.2KV 40A TO247
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io): 40A
Technology: Standard
Reverse Recovery Time (trr): 350 ns
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APT40DQ60BCTG 6263-apt40dq60bctg-datasheet
APT40DQ60BCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 600V 40A TO247
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT40DQ60BG 6262-apt40dq60bg-apt40dq60sg-datasheet
APT40DQ60BG
Hersteller: Microchip Technology
Description: DIODE STD 600V 40A TO247 [B]
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io): 40A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-247-2
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APT40GP60BG APT40GP60B_S_D.pdf
APT40GP60BG
Hersteller: Microchip Technology
Description: IGBT PT 600V 100A TO247
Power - Max: 543 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
Gate Charge: 135 nC
Test Condition: 400V, 40A, 5Ohm, 15V
Switching Energy: 385µJ (on), 352µJ (off)
Td (on/off) @ 25°C: 20ns/64ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT40GP60JDQ2 6268-apt40gp60jdq2-datasheet
APT40GP60JDQ2
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 86A 284W ISOTOP
Input Capacitance (Cies) @ Vce: 4.61 nF @ 25 V
Current - Collector Cutoff (Max): 500 µA
Power - Max: 284 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 86 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT40GP90B2DQ2G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT40GP90B2DQ2G
Hersteller: Microchip Technology
Description: IGBT PT 900V 101A
Produkt ist nicht verfügbar
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APT40GP90BG APT40GP90B_A.pdf
APT40GP90BG
Hersteller: Microchip Technology
Description: IGBT PT 900V 100A TO247
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 543 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
Gate Charge: 145 nC
Test Condition: 600V, 40A, 5Ohm, 15V
Switching Energy: 825µJ (off)
Td (on/off) @ 25°C: 16ns/75ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
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APT40GP90JDQ2 6272-apt40gp90jdq2-datasheet
APT40GP90JDQ2
Hersteller: Microchip Technology
Description: IGBT MODULE 900V 64A 284W ISOTOP
Current - Collector (Ic) (Max): 64 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Current - Collector Cutoff (Max): 350 µA
Power - Max: 284 W
Voltage - Collector Emitter Breakdown (Max): 900 V
Produkt ist nicht verfügbar
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APT40GP90J 6271-apt40gp90j-datasheet
APT40GP90J
Hersteller: Microchip Technology
Description: IGBT MODULE 900V 68A 284W ISOTOP
Current - Collector Cutoff (Max): 250 µA
Power - Max: 284 W
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 68 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Produkt ist nicht verfügbar
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APT40GT60BRG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT40GT60BRG
Hersteller: Microchip Technology
Description: IGBT NPT 600V 80A TO247
Power - Max: 345 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
Gate Charge: 200 nC
Test Condition: 400V, 40A, 5Ohm, 15V
Switching Energy: 828µJ (off)
Td (on/off) @ 25°C: 12ns/124ns
IGBT Type: NPT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT41F100J APT41F100J_C.pdf
APT41F100J
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 42A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 33A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 25 V
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APT41M80B2 APT41M80B2_L_C.pdf
APT41M80B2
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 43A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8070 pF @ 25 V
Produkt ist nicht verfügbar
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APT41M80L APT41M80B2_L_C.pdf
APT41M80L
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 43A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 (L)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8070 pF @ 25 V
Produkt ist nicht verfügbar
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APT43M60L 7040-apt43m60b2-apt43m60l-datasheet
APT43M60L
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 45A TO264
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
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APT44F80B2 7042-apt44f80b2-datasheet
APT44F80B2
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 47A T-MAX
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APT44F80L 7042-apt44f80b2-datasheet
APT44F80L
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 47A TO264
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 9330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Produkt ist nicht verfügbar
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APT45GP120B2DQ2G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT45GP120B2DQ2G
Hersteller: Microchip Technology
Description: IGBT PT 1200V 113A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/100ns
Switching Energy: 900µJ (on), 905µJ (off)
Test Condition: 600V, 45A, 5Ohm, 15V
Gate Charge: 185 nC
Part Status: Active
Current - Collector (Ic) (Max): 113 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 170 A
Power - Max: 625 W
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APT45GP120BG APT45GP120B_C.pdf
APT45GP120BG
Hersteller: Microchip Technology
Description: IGBT PT 1200V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/102ns
Switching Energy: 900µJ (on), 904µJ (off)
Test Condition: 600V, 45A, 5Ohm, 15V
Gate Charge: 185 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 170 A
Power - Max: 625 W
Produkt ist nicht verfügbar
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APT45GP120J 6279-apt45gp120j-datasheet
APT45GP120J
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 75A 329W ISOTOP
Input Capacitance (Cies) @ Vce: 3.94 nF @ 25 V
Current - Collector Cutoff (Max): 500 µA
Power - Max: 329 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Produkt ist nicht verfügbar
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APT45GP120JDQ2 6280-apt45gp120jdq2-datasheet
APT45GP120JDQ2
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 75A 329W ISOTOP
Input Capacitance (Cies) @ Vce: 4 nF @ 25 V
Current - Collector Cutoff (Max): 750 µA
Power - Max: 329 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Produkt ist nicht verfügbar
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APT45M100J 7053-apt45m100j-datasheet
APT45M100J
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 45A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 960W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 33A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar
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APT47M60J 7064-apt47m60j-datasheet
APT47M60J
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 49A ISOTOP
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APT47N60BC3G APT47N60B_SC3(G)_F.pdf
APT47N60BC3G
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 47A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
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APT47N60SC3G APT47N60B_SC3(G)_F.pdf
APT47N60SC3G
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 47A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
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APT48M80B2 7069-apt48m80b2-datasheet
APT48M80B2
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 49A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 9330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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APT48M80L 7069-apt48m80b2-datasheet
APT48M80L
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 49A TO264
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APT4F120K APT4F120K.pdf
APT4F120K
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 4A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 500µA
Power Dissipation (Max): 225W (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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APT4M120K
APT4M120K
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 2A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220 [K]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 25 V
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APT5010B2FLLG APT5010%28B2%2CL%29FLL.pdf
APT5010B2FLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 46A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
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APT5010B2LLG APT5010B2_LLL(G)_D.pdf
APT5010B2LLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 46A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
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APT5010JLL 6291-apt5010jll-datasheet
APT5010JLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 41A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 100mOhm @ 20.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar
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APT5010JVFR APT5010JVFR_B.pdf
APT5010JVFR
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 44A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 470 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
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APT5010LFLLG APT5010%28B2%2CL%29FLL.pdf
APT5010LFLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 46A TO264
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT5010LLLG 6287-apt5010b2llg-apt5010lllg-datasheet
APT5010LLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 46A TO264
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT5014BLLG APT5014B_SLL(G)_B.pdf
APT5014BLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 35A TO247
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 403W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3261 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
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APT5014SLLG APT5014B_SLL(G)_B.pdf
APT5014SLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 35A D3PAK
Input Capacitance (Ciss) (Max) @ Vds: 3261 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D3Pak
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 403W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Produkt ist nicht verfügbar
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APT5016BFLLG APT5016B_SFLL_C.pdf
APT5016BFLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 30A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 329W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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APT5016BLLG 6304-apt5016bllg-apt5016sllg-datasheet
APT5016BLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 30A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 329W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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APT5018BLLG APT5018_B%2CS_LL.pdf
APT5018BLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 27A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2596 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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APT5024BFLLG 7080-apt5024bfllg-apt5024sfllg-datasheet
APT5024BFLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 22A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Rds On (Max) @ Id, Vgs: 240mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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APT5024BLLG 6316-apt5024bllg-apt5024sllg-datasheet
APT5024BLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 22A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 265W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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APT50GF120B2RG 7089-apt50gf120b2g-apt50gf120lrg-datasheet
APT50GF120B2RG
Hersteller: Microchip Technology
Description: IGBT NPT 1200V 135A
Power - Max: 781 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 135 A
Gate Charge: 340 nC
Test Condition: 800V, 50A, 1Ohm, 15V
Switching Energy: 3.6mJ (on), 2.64mJ (off)
Td (on/off) @ 25°C: 25ns/260ns
IGBT Type: NPT
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Produkt ist nicht verfügbar
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APT50GF120JRDQ3 High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT50GF120JRDQ3
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 120A 521W ISOTOP
Input Capacitance (Cies) @ Vce: 5.32 nF @ 25 V
Current - Collector Cutoff (Max): 750 µA
Power - Max: 521 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 120 A
IGBT Type: NPT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 75A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Produkt ist nicht verfügbar
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APT50GF120LRG 7089-apt50gf120b2g-apt50gf120lrg-datasheet
APT50GF120LRG
Hersteller: Microchip Technology
Description: IGBT NPT 1200V 135A TO264
Power - Max: 781 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 135 A
Part Status: Active
Gate Charge: 340 nC
Test Condition: 800V, 50A, 1Ohm, 15V
Switching Energy: 3.6mJ (on), 2.64mJ (off)
Td (on/off) @ 25°C: 25ns/260ns
IGBT Type: NPT
Supplier Device Package: TO-264 [L]
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT50GN120B2G 6323-apt50gn120b2g-datasheet
APT50GN120B2G
Hersteller: Microchip Technology
Description: IGBT NPT FIELD STOP 1200V 134A
Power - Max: 543 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 134 A
Part Status: Active
Gate Charge: 315 nC
Test Condition: 800V, 50A, 2.2Ohm, 15V
Switching Energy: 4495µJ (off)
Td (on/off) @ 25°C: 28ns/320ns
IGBT Type: NPT, Trench Field Stop
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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APT50GN120L2DQ2G 6324-apt50gn120l2dq2g-datasheet
APT50GN120L2DQ2G
Hersteller: Microchip Technology
Description: IGBT NPT FIELD STOP 1200V 134A
Power - Max: 543 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 134 A
Part Status: Active
Gate Charge: 315 nC
Test Condition: 800V, 50A, 2.2Ohm, 15V
Switching Energy: 4495µJ (off)
Td (on/off) @ 25°C: 28ns/320ns
IGBT Type: NPT, Trench Field Stop
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT50GN60BDQ2G 7095-apt50gn60bdq2g-apt50gn60sdq2g-datasheet
APT50GN60BDQ2G
Hersteller: Microchip Technology
Description: IGBT TRENCH FS 600V 107A TO247
Power - Max: 366 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 107 A
Part Status: Active
Gate Charge: 325 nC
Test Condition: 400V, 50A, 4.3Ohm, 15V
Switching Energy: 1185µJ (on), 1565µJ (off)
Td (on/off) @ 25°C: 20ns/230ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT50GN60BG 7094-apt50gn60bg-apt50gn60sg-datasheet
APT50GN60BG
Hersteller: Microchip Technology
Description: IGBT TRENCH FS 600V 107A TO247
Power - Max: 366 W
Current - Collector Pulsed (Icm): 150 A
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 107 A
Part Status: Active
Gate Charge: 325 nC
Test Condition: 400V, 50A, 4.3Ohm, 15V
Switching Energy: 1185µJ (on), 1565µJ (off)
Td (on/off) @ 25°C: 20ns/230ns
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