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APT1204R7BFLLG APT1204R7BFLLG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 1200V 3.5A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1.75A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 25 V
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APT12M80B APT12M80B Microchip Technology 6618-apt12m80b-apt12m80s-datasheet Description: MOSFET N-CH 800V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 6A, 10V
Power Dissipation (Max): 335W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Produkt ist nicht verfügbar
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APT13F120B APT13F120B Microchip Technology 6621-apt13f120b-apt13f120s-datasheet Description: MOSFET N-CH 1200V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 7A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 25 V
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APT13GP120BDQ1G APT13GP120BDQ1G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT PT 1200V 41A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 9ns/28ns
Switching Energy: 115µJ (on), 165µJ (off)
Test Condition: 600V, 13A, 5Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 250 W
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APT13GP120BG APT13GP120BG Microchip Technology 6622-apt13gp120bg-apt13gp120sg-datasheet Description: IGBT PT 1200V 41A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 9ns/28ns
Switching Energy: 115µJ (on), 165µJ (off)
Test Condition: 600V, 13A, 5Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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APT14F100B APT14F100B Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 1000V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 7A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V
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APT14M120B APT14M120B Microchip Technology 6629-apt14m120bg-apt14m120sg-datasheet Description: MOSFET N-CH 1200V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 7A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 25 V
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APT150GN120J APT150GN120J Microchip Technology 5738-apt150gn120j-datasheet Description: IGBT MOD 1200V 215A 625W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 215 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 625 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 9.5 nF @ 25 V
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APT150GN60J APT150GN60J Microchip Technology 5739-apt150gn60j-datasheet Description: IGBT MOD 600V 220A 536W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 536 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 9.2 nF @ 25 V
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APT150GN60JDQ4 APT150GN60JDQ4 Microchip Technology 5740-apt150gn60jdq4-datasheet Description: IGBT MOD 600V 220A 536W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 536 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.2 nF @ 25 V
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APT15D100BCTG APT15D100BCTG Microchip Technology 5745-apt15d100bctg-datasheet Description: DIODE ARRAY GP 1000V 15A TO247
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APT15D100BG APT15D100BG Microchip Technology 5744-apt15d100bg-datasheet Description: DIODE GEN PURP 1KV 15A TO247
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APT15D100BHBG APT15D100BHBG Microchip Technology 5746-apt15d100bhbg-datasheet Description: DIODE ARRAY GP 1000V 15A TO247
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APT15D100KG APT15D100KG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: DIODE STD 1000V 15A TO220 [K]
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 260 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
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APT15D120KG APT15D120KG Microchip Technology 123643-apt15d120kg-datasheet Description: DIODE GP 1.2KV 15A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 260 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
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APT15D40BCTG APT15D40BCTG Microchip Technology 123678-apt15d40bctg-datasheet Description: DIODE ARRAY GP 400V 15A TO247
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APT15D40KG APT15D40KG Microchip Technology 123796-apt15d40kg-datasheet Description: DIODE GEN PURP 400V 15A TO220-2
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APT15D60BCAG APT15D60BCAG Microchip Technology 5754-apt15d60bcag-datasheet Description: DIODE ARRAY GP 600V 14A TO247
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APT15D60BCTG APT15D60BCTG Microchip Technology 5755-apt15d60bctg-datasheet Description: DIODE ARRAY GP 600V 15A TO247
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APT15D60BG APT15D60BG Microchip Technology 5753-apt15d60bg-datasheet Description: DIODE GEN PURP 600V 15A TO247
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APT15D60KG APT15D60KG Microchip Technology 6645-apt15d60kg-datasheet Description: DIODE STANDARD 600V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
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APT15DQ100BCTG APT15DQ100BCTG Microchip Technology 6647-apt15dq100bctg-datasheet Description: DIODE ARRAY GP 1000V 15A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 235 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
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APT15DQ100BG APT15DQ100BG Microchip Technology 123689-apt15dq100b-s-g-c-pdf Description: DIODE GEN PURP 1KV 15A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 235 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
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APT15DQ120BG APT15DQ120BG Microchip Technology 123688-apt15dq120bg-apt15dq120sg-datasheet Description: DIODE GEN PURP 1.2KV 15A TO247
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APT15DQ120KG APT15DQ120KG Microchip Technology 123687-apt15dq120kg-datasheet Description: DIODE GP 1.2KV 15A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 240 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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APT15DQ60BCTG APT15DQ60BCTG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: DIODE ARRAY GP 600V 15A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 19 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 15 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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APT15DQ60BG APT15DQ60BG Microchip Technology 6655-apt15dq60bg-apt15dq60sg-datasheet Description: DIODE STD 600V 15A TO247 [B]
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 19 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 15 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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APT15DS60BG APT15DS60BG Microchip Technology Description: DIODE ARRAY GP 600V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 13A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 4 V @ 15 A
Current - Reverse Leakage @ Vr: 150 µA @ 600 V
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APT15GN120BDQ1G APT15GN120BDQ1G Microchip Technology 6670-apt15gn120bdq1g-apt15gn120sdq1g-datasheet Description: IGBT 1200V 45A 195W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/150ns
Switching Energy: 410µJ (on), 950µJ (off)
Test Condition: 800V, 15A, 4.3Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 195 W
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APT15GP60BG APT15GP60BG Microchip Technology 6673-apt15gp60bg-apt15gp60sg-datasheet Description: IGBT 600V 56A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 8ns/29ns
Switching Energy: 130µJ (on), 121µJ (off)
Test Condition: 400V, 15A, 5Ohm, 15V
Gate Charge: 55 nC
Part Status: Active
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 65 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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APT15GP90BDQ1G APT15GP90BDQ1G Microchip Technology 5770-apt15gp90bdq1g-datasheet Description: IGBT 900V 43A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 9ns/33ns
Switching Energy: 200µJ (off)
Test Condition: 600V, 15A, 4.3Ohm, 15V
Gate Charge: 60 nC
Part Status: Active
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 250 W
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APT15GT120BRDQ1G APT15GT120BRDQ1G Microchip Technology index.php?option=com_docman&task=doc_download&gid=123698 Description: IGBT 1200V 36A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 10ns/85ns
Switching Energy: 585µJ (on), 260µJ (off)
Test Condition: 800V, 15A, 5Ohm, 15V
Gate Charge: 105 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
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APT15GT120BRG APT15GT120BRG Microchip Technology 6678-apt15gt120brg-apt15gt120srg-datasheet Description: IGBT 1200V 36A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 10ns/85ns
Switching Energy: 585µJ (on), 260µJ (off)
Test Condition: 800V, 15A, 5Ohm, 15V
Gate Charge: 105 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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APT15GT60BRDQ1G APT15GT60BRDQ1G Microchip Technology 6683-apt15gt60brdq1g-datasheet Description: IGBT 600V 42A 184W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 6ns/105ns
Switching Energy: 150µJ (on), 215µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 75 nC
Part Status: Active
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 184 W
Produkt ist nicht verfügbar
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APT15GT60BRG APT15GT60BRG Microchip Technology 6681-apt15gt60brg-datasheet Description: IGBT 600V 42A 184W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 6ns/105ns
Switching Energy: 150µJ (on), 215µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 75 nC
Part Status: Active
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 184 W
Produkt ist nicht verfügbar
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APT17F100B APT17F100B Microchip Technology index.php?option=com_docman&task=doc_download&gid=6691 Description: MOSFET N-CH 1000V 17A TO247
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APT18M100B APT18M100B Microchip Technology 6702-apt18m100b-apt18m100s-datasheet Description: MOSFET N-CH 1000V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 9A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4845 pF @ 25 V
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APT18M80B APT18M80B Microchip Technology 6704-apt18m80b-apt18m80s-datasheet Description: MOSFET N-CH 800V 19A TO247
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APT19F100J APT19F100J Microchip Technology 6708-apt19f100j-datasheet Description: MOSFET N-CH 1000V 20A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 16A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
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APT19M120J APT19M120J Microchip Technology 6710-apt19m120j-datasheet Description: MOSFET N-CH 1200V 19A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 14A, 10V
Power Dissipation (Max): 545W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V
Produkt ist nicht verfügbar
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APT20GT60BRDQ1G APT20GT60BRDQ1G Microchip Technology 6730-apt20gt60brdq1g-datasheet Description: IGBT NPT 600V 43A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 8ns/80ns
Switching Energy: 215µJ (on), 245µJ (off)
Test Condition: 400V, 20A, 5Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 174 W
Produkt ist nicht verfügbar
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APT20GT60BRG APT20GT60BRG Microchip Technology 6729-apt20gt60brg-datasheet Description: IGBT NPT 600V 43A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 8ns/80ns
Switching Energy: 215µJ (on), 245µJ (off)
Test Condition: 400V, 20A, 5Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 174 W
Produkt ist nicht verfügbar
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APT20M11JVR APT20M11JVR Microchip Technology 6735-apt20m11jvr-datasheet Description: MOSFET N-CH 200V 175A SOT-227
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APT20M22LVFRG APT20M22LVFRG Microchip Technology 6752-apt20m22lvfrg-datasheet Description: MOSFET N-CH 200V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 435 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
Produkt ist nicht verfügbar
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APT20M22LVRG APT20M22LVRG Microchip Technology 5955-apt20m22lvr-datasheet Description: MOSFET N-CH 200V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 435 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
Produkt ist nicht verfügbar
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APT20M38BVRG APT20M38BVRG Microchip Technology 5960-apt20m38bvr-datasheet Description: MOSFET N-CH 200V 67A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V
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APT20M38SVRG APT20M38SVRG Microchip Technology 5961-apt20m38svr-datasheet Description: MOSFET N-CH 200V 67A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V
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APT20M45BVFRG APT20M45BVFRG Microchip Technology 5963-apt20m45bvfrg-datasheet Description: MOSFET N-CH 200V 56A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4860 pF @ 25 V
Produkt ist nicht verfügbar
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APT21M100J APT21M100J Microchip Technology 6760-apt21m100j-datasheet Description: MOSFET N-CH 1000V 21A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 16A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
Produkt ist nicht verfügbar
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APT22F120B2 APT22F120B2 Microchip Technology 6766-apt22f120b2-apt22f120l-datasheet Description: MOSFET N-CH 1200V 23A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 12A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8370 pF @ 25 V
Produkt ist nicht verfügbar
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APT22F120L APT22F120L Microchip Technology 6766-apt22f120b2-apt22f120l-datasheet Description: MOSFET N-CH 1200V 23A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 12A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8370 pF @ 25 V
Produkt ist nicht verfügbar
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APT22F80B APT22F80B Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 800V 23A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4595 pF @ 25 V
auf Bestellung 262 Stücke:
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APT24M120B2 APT24M120B2 Microchip Technology 6781-apt24m120b2-apt24m120l-datasheet Description: MOSFET N-CH 1200V 24A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 12A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8370 pF @ 25 V
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APT25GN120B2DQ2G APT25GN120B2DQ2G Microchip Technology 5989-apt25gn120b2dq2g-datasheet Description: IGBT 1200V 67A 272W TMAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 22ns/280ns
Switching Energy: 2.15µJ (off)
Test Condition: 800V, 25A, 4.3Ohm, 15V
Gate Charge: 155 nC
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 272 W
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APT25GN120BG APT25GN120BG Microchip Technology 6785-apt25gn120bg-apt25gn120sg-datasheet Description: IGBT 1200V 67A 272W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/280ns
Switching Energy: 2.15µJ (off)
Test Condition: 800V, 25A, 1Ohm, 15V
Gate Charge: 155 nC
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 272 W
Produkt ist nicht verfügbar
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APT25GP120BDQ1G APT25GP120BDQ1G Microchip Technology 6786-apt25gp120bdq1g-datasheet Description: IGBT 1200V 69A 417W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/70ns
Switching Energy: 500µJ (on), 440µJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 69 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 417 W
Produkt ist nicht verfügbar
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APT25GP120BG APT25GP120BG Microchip Technology 5990-apt25gp120b-datasheet Description: IGBT PT 1200V 69A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/70ns
Switching Energy: 500µJ (on), 438µJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 69 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 417 W
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APT25GP90BDQ1G APT25GP90BDQ1G Microchip Technology 5992-apt25gp90bdq1g-datasheet Description: IGBT PT 900V 72A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/55ns
Switching Energy: 370µJ (off)
Test Condition: 600V, 40A, 4.3Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 417 W
Produkt ist nicht verfügbar
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APT25GP90BG APT25GP90BG Microchip Technology 5991-apt25gp90b-datasheet Description: IGBT PT 900V 72A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/55ns
Switching Energy: 370µJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 417 W
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APT25GT120BRDQ2G APT25GT120BRDQ2G Microchip Technology 6791-apt25gt120brdq2g-datasheet Description: IGBT NPT 1200V 54A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 14ns/150ns
Switching Energy: 930µJ (on), 720µJ (off)
Test Condition: 800V, 25A, 5Ohm, 15V
Gate Charge: 170 nC
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 347 W
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2+13.01 EUR
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APT1204R7BFLLG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT1204R7BFLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 3.5A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1.75A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 25 V
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APT12M80B 6618-apt12m80b-apt12m80s-datasheet
APT12M80B
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 6A, 10V
Power Dissipation (Max): 335W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Produkt ist nicht verfügbar
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APT13F120B 6621-apt13f120b-apt13f120s-datasheet
APT13F120B
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 7A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 25 V
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APT13GP120BDQ1G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT13GP120BDQ1G
Hersteller: Microchip Technology
Description: IGBT PT 1200V 41A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 9ns/28ns
Switching Energy: 115µJ (on), 165µJ (off)
Test Condition: 600V, 13A, 5Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 250 W
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APT13GP120BG 6622-apt13gp120bg-apt13gp120sg-datasheet
APT13GP120BG
Hersteller: Microchip Technology
Description: IGBT PT 1200V 41A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 9ns/28ns
Switching Energy: 115µJ (on), 165µJ (off)
Test Condition: 600V, 13A, 5Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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APT14F100B High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT14F100B
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 7A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V
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APT14M120B 6629-apt14m120bg-apt14m120sg-datasheet
APT14M120B
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 7A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 25 V
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APT150GN120J 5738-apt150gn120j-datasheet
APT150GN120J
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 215A 625W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 215 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 625 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 9.5 nF @ 25 V
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APT150GN60J 5739-apt150gn60j-datasheet
APT150GN60J
Hersteller: Microchip Technology
Description: IGBT MOD 600V 220A 536W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 536 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 9.2 nF @ 25 V
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APT150GN60JDQ4 5740-apt150gn60jdq4-datasheet
APT150GN60JDQ4
Hersteller: Microchip Technology
Description: IGBT MOD 600V 220A 536W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 536 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.2 nF @ 25 V
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APT15D100BCTG 5745-apt15d100bctg-datasheet
APT15D100BCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 1000V 15A TO247
Produkt ist nicht verfügbar
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APT15D100BG 5744-apt15d100bg-datasheet
APT15D100BG
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 15A TO247
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APT15D100BHBG 5746-apt15d100bhbg-datasheet
APT15D100BHBG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 1000V 15A TO247
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APT15D100KG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT15D100KG
Hersteller: Microchip Technology
Description: DIODE STD 1000V 15A TO220 [K]
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 260 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
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5+3.64 EUR
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APT15D120KG 123643-apt15d120kg-datasheet
APT15D120KG
Hersteller: Microchip Technology
Description: DIODE GP 1.2KV 15A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 260 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
auf Bestellung 255 Stücke:
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6+3.5 EUR
100+2.68 EUR
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APT15D40BCTG 123678-apt15d40bctg-datasheet
APT15D40BCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 400V 15A TO247
Produkt ist nicht verfügbar
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APT15D40KG 123796-apt15d40kg-datasheet
APT15D40KG
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 15A TO220-2
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APT15D60BCAG 5754-apt15d60bcag-datasheet
APT15D60BCAG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 600V 14A TO247
Produkt ist nicht verfügbar
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APT15D60BCTG 5755-apt15d60bctg-datasheet
APT15D60BCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 600V 15A TO247
Produkt ist nicht verfügbar
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APT15D60BG 5753-apt15d60bg-datasheet
APT15D60BG
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 15A TO247
Produkt ist nicht verfügbar
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APT15D60KG 6645-apt15d60kg-datasheet
APT15D60KG
Hersteller: Microchip Technology
Description: DIODE STANDARD 600V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
auf Bestellung 325 Stücke:
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7+2.85 EUR
100+2.35 EUR
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APT15DQ100BCTG 6647-apt15dq100bctg-datasheet
APT15DQ100BCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 1000V 15A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 235 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
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4+4.66 EUR
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APT15DQ100BG 123689-apt15dq100b-s-g-c-pdf
APT15DQ100BG
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 15A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 235 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Produkt ist nicht verfügbar
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APT15DQ120BG 123688-apt15dq120bg-apt15dq120sg-datasheet
APT15DQ120BG
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1.2KV 15A TO247
Produkt ist nicht verfügbar
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APT15DQ120KG 123687-apt15dq120kg-datasheet
APT15DQ120KG
Hersteller: Microchip Technology
Description: DIODE GP 1.2KV 15A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 240 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 168 Stücke:
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12+1.53 EUR
100+1.26 EUR
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APT15DQ60BCTG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT15DQ60BCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 600V 15A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 19 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 15 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
auf Bestellung 253 Stücke:
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5+3.94 EUR
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APT15DQ60BG 6655-apt15dq60bg-apt15dq60sg-datasheet
APT15DQ60BG
Hersteller: Microchip Technology
Description: DIODE STD 600V 15A TO247 [B]
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 19 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 15 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
auf Bestellung 298 Stücke:
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Anzahl Preis
8+2.39 EUR
100+1.95 EUR
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APT15DS60BG
APT15DS60BG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 600V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 13A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 4 V @ 15 A
Current - Reverse Leakage @ Vr: 150 µA @ 600 V
Produkt ist nicht verfügbar
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APT15GN120BDQ1G 6670-apt15gn120bdq1g-apt15gn120sdq1g-datasheet
APT15GN120BDQ1G
Hersteller: Microchip Technology
Description: IGBT 1200V 45A 195W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/150ns
Switching Energy: 410µJ (on), 950µJ (off)
Test Condition: 800V, 15A, 4.3Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 195 W
Produkt ist nicht verfügbar
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APT15GP60BG 6673-apt15gp60bg-apt15gp60sg-datasheet
APT15GP60BG
Hersteller: Microchip Technology
Description: IGBT 600V 56A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 8ns/29ns
Switching Energy: 130µJ (on), 121µJ (off)
Test Condition: 400V, 15A, 5Ohm, 15V
Gate Charge: 55 nC
Part Status: Active
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 65 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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APT15GP90BDQ1G 5770-apt15gp90bdq1g-datasheet
APT15GP90BDQ1G
Hersteller: Microchip Technology
Description: IGBT 900V 43A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 9ns/33ns
Switching Energy: 200µJ (off)
Test Condition: 600V, 15A, 4.3Ohm, 15V
Gate Charge: 60 nC
Part Status: Active
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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APT15GT120BRDQ1G index.php?option=com_docman&task=doc_download&gid=123698
APT15GT120BRDQ1G
Hersteller: Microchip Technology
Description: IGBT 1200V 36A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 10ns/85ns
Switching Energy: 585µJ (on), 260µJ (off)
Test Condition: 800V, 15A, 5Ohm, 15V
Gate Charge: 105 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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APT15GT120BRG 6678-apt15gt120brg-apt15gt120srg-datasheet
APT15GT120BRG
Hersteller: Microchip Technology
Description: IGBT 1200V 36A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 10ns/85ns
Switching Energy: 585µJ (on), 260µJ (off)
Test Condition: 800V, 15A, 5Ohm, 15V
Gate Charge: 105 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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APT15GT60BRDQ1G 6683-apt15gt60brdq1g-datasheet
APT15GT60BRDQ1G
Hersteller: Microchip Technology
Description: IGBT 600V 42A 184W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 6ns/105ns
Switching Energy: 150µJ (on), 215µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 75 nC
Part Status: Active
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 184 W
Produkt ist nicht verfügbar
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APT15GT60BRG 6681-apt15gt60brg-datasheet
APT15GT60BRG
Hersteller: Microchip Technology
Description: IGBT 600V 42A 184W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 6ns/105ns
Switching Energy: 150µJ (on), 215µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 75 nC
Part Status: Active
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 184 W
Produkt ist nicht verfügbar
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APT17F100B index.php?option=com_docman&task=doc_download&gid=6691
APT17F100B
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 17A TO247
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APT18M100B 6702-apt18m100b-apt18m100s-datasheet
APT18M100B
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 9A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4845 pF @ 25 V
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APT18M80B 6704-apt18m80b-apt18m80s-datasheet
APT18M80B
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 19A TO247
Produkt ist nicht verfügbar
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APT19F100J 6708-apt19f100j-datasheet
APT19F100J
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 20A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 16A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
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APT19M120J 6710-apt19m120j-datasheet
APT19M120J
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 19A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 14A, 10V
Power Dissipation (Max): 545W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V
Produkt ist nicht verfügbar
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APT20GT60BRDQ1G 6730-apt20gt60brdq1g-datasheet
APT20GT60BRDQ1G
Hersteller: Microchip Technology
Description: IGBT NPT 600V 43A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 8ns/80ns
Switching Energy: 215µJ (on), 245µJ (off)
Test Condition: 400V, 20A, 5Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 174 W
Produkt ist nicht verfügbar
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APT20GT60BRG 6729-apt20gt60brg-datasheet
APT20GT60BRG
Hersteller: Microchip Technology
Description: IGBT NPT 600V 43A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 8ns/80ns
Switching Energy: 215µJ (on), 245µJ (off)
Test Condition: 400V, 20A, 5Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 174 W
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APT20M11JVR 6735-apt20m11jvr-datasheet
APT20M11JVR
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 175A SOT-227
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APT20M22LVFRG 6752-apt20m22lvfrg-datasheet
APT20M22LVFRG
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 435 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
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APT20M22LVRG 5955-apt20m22lvr-datasheet
APT20M22LVRG
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 435 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
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APT20M38BVRG 5960-apt20m38bvr-datasheet
APT20M38BVRG
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 67A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V
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APT20M38SVRG 5961-apt20m38svr-datasheet
APT20M38SVRG
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 67A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V
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1+22.21 EUR
100+18.05 EUR
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APT20M45BVFRG 5963-apt20m45bvfrg-datasheet
APT20M45BVFRG
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 56A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4860 pF @ 25 V
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APT21M100J 6760-apt21m100j-datasheet
APT21M100J
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 21A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 16A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
Produkt ist nicht verfügbar
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APT22F120B2 6766-apt22f120b2-apt22f120l-datasheet
APT22F120B2
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 23A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 12A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8370 pF @ 25 V
Produkt ist nicht verfügbar
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APT22F120L 6766-apt22f120b2-apt22f120l-datasheet
APT22F120L
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 23A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 12A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8370 pF @ 25 V
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APT22F80B High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT22F80B
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 23A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4595 pF @ 25 V
auf Bestellung 262 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.77 EUR
100+12.8 EUR
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APT24M120B2 6781-apt24m120b2-apt24m120l-datasheet
APT24M120B2
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 24A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 12A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8370 pF @ 25 V
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APT25GN120B2DQ2G 5989-apt25gn120b2dq2g-datasheet
APT25GN120B2DQ2G
Hersteller: Microchip Technology
Description: IGBT 1200V 67A 272W TMAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 22ns/280ns
Switching Energy: 2.15µJ (off)
Test Condition: 800V, 25A, 4.3Ohm, 15V
Gate Charge: 155 nC
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 272 W
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APT25GN120BG 6785-apt25gn120bg-apt25gn120sg-datasheet
APT25GN120BG
Hersteller: Microchip Technology
Description: IGBT 1200V 67A 272W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/280ns
Switching Energy: 2.15µJ (off)
Test Condition: 800V, 25A, 1Ohm, 15V
Gate Charge: 155 nC
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 272 W
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APT25GP120BDQ1G 6786-apt25gp120bdq1g-datasheet
APT25GP120BDQ1G
Hersteller: Microchip Technology
Description: IGBT 1200V 69A 417W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/70ns
Switching Energy: 500µJ (on), 440µJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 69 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 417 W
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APT25GP120BG 5990-apt25gp120b-datasheet
APT25GP120BG
Hersteller: Microchip Technology
Description: IGBT PT 1200V 69A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/70ns
Switching Energy: 500µJ (on), 438µJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 69 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 417 W
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Anzahl Preis
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APT25GP90BDQ1G 5992-apt25gp90bdq1g-datasheet
APT25GP90BDQ1G
Hersteller: Microchip Technology
Description: IGBT PT 900V 72A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/55ns
Switching Energy: 370µJ (off)
Test Condition: 600V, 40A, 4.3Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 417 W
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APT25GP90BG 5991-apt25gp90b-datasheet
APT25GP90BG
Hersteller: Microchip Technology
Description: IGBT PT 900V 72A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/55ns
Switching Energy: 370µJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 417 W
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APT25GT120BRDQ2G 6791-apt25gt120brdq2g-datasheet
APT25GT120BRDQ2G
Hersteller: Microchip Technology
Description: IGBT NPT 1200V 54A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 14ns/150ns
Switching Energy: 930µJ (on), 720µJ (off)
Test Condition: 800V, 25A, 5Ohm, 15V
Gate Charge: 170 nC
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 347 W
auf Bestellung 88 Stücke:
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Anzahl Preis
2+13.01 EUR
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