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APT25GP90BDQ1G APT25GP90BDQ1G Microchip Technology APT25GP90BDQ1(G)_A.pdf Description: IGBT PT 900V 72A TO247
Power - Max: 417 W
Current - Collector Pulsed (Icm): 110 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 72 A
Gate Charge: 110 nC
Test Condition: 600V, 40A, 4.3Ohm, 15V
Switching Energy: 370µJ (off)
Td (on/off) @ 25°C: 13ns/55ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT25GP90BG APT25GP90BG Microchip Technology APT25GP90B_D.pdf Description: IGBT PT 900V 72A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/55ns
Switching Energy: 370µJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 417 W
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APT25GT120BRDQ2G APT25GT120BRDQ2G Microchip Technology 6791-apt25gt120brdq2g-datasheet Description: IGBT NPT 1200V 54A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 14ns/150ns
Switching Energy: 930µJ (on), 720µJ (off)
Test Condition: 800V, 25A, 5Ohm, 15V
Gate Charge: 170 nC
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 347 W
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APT25GT120BRG APT25GT120BRG Microchip Technology APT25GT120BR%28G%29_D.pdf Description: IGBT NPT 1200V 54A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 14ns/150ns
Switching Energy: 930µJ (on), 720µJ (off)
Test Condition: 800V, 25A, 5Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 347 W
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APT25M100J APT25M100J Microchip Technology 6793-apt25m100j-datasheet Description: MOSFET N-CH 1000V 25A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 18A, 10V
Power Dissipation (Max): 545W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9835 pF @ 25 V
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APT26F120B2 APT26F120B2 Microchip Technology 6796-apt26f120b2-apt26f120l-datasheet Description: MOSFET N-CH 1200V 27A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: T-MAX™
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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APT26F120L APT26F120L Microchip Technology 6796-apt26f120b2-apt26f120l-datasheet Description: MOSFET N-CH 1200V 27A TO264
Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT28M120B2 APT28M120B2 Microchip Technology 6817-apt28m120b2-apt28m120l-datasheet Description: MOSFET N-CH 1200V 29A T-MAX
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V
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APT28M120L APT28M120L Microchip Technology 6817-apt28m120b2-apt28m120l-datasheet Description: MOSFET N-CH 1200V 29A TO264
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APT29F100B2 APT29F100B2 Microchip Technology APT29F100B2_L_D.pdf Description: MOSFET N-CH 1000V 30A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 16A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
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APT29F100L APT29F100L Microchip Technology APT29F100B2_L_D.pdf Description: MOSFET N-CH 1000V 30A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 16A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
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APT29F80J APT29F80J Microchip Technology 6822-apt29f80j-datasheet Description: MOSFET N-CH 800V 31A ISOTOP
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APT2X100D40J APT2X100D40J Microchip Technology 123800-apt2x101d40j-apt2x100d40j-datasheet Description: DIODE MODULE 400V 100A ISOTOP
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APT2X100D60J APT2X100D60J Microchip Technology 123801-apt2x101d60j-apt2x100d60j-datasheet Description: DIODE MODULE 600V 100A ISOTOP
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APT2X100DQ120J APT2X100DQ120J Microchip Technology 123803-apt2x101dq120j-apt2x100dq120j-datasheet Description: DIODE MODULE 1.2KV 100A ISOTOP
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APT2X100DQ60J APT2X100DQ60J Microchip Technology 123683-apt2x101dq60j-apt2x100dq60j-datasheet Description: DIODE MODULE 600V 100A ISOTOP
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APT2X101D100J APT2X101D100J Microchip Technology 123642-apt2x101d100j-apt2x100d100j-datasheet Description: DIODE MODULE GP 1000V 95A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 95A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT2X101D120J APT2X101D120J Microchip Technology APT2X101_100D120J_E.pdf Description: DIODE MODULE GP 1200V 93A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 93A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 420 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT2X101D20J APT2X101D20J Microchip Technology 123798-apt2x101d20j-apt2x100d20j-datasheet Description: DIODE MODULE 200V 100A ISOTOP
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APT2X101D40J APT2X101D40J Microchip Technology APT2X101_100D40J_G.pdf Description: DIODE MODULE GP 400V 100A ISOTOP
Current - Reverse Leakage @ Vr: 500 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT2X101D60J APT2X101D60J Microchip Technology 123801-apt2x101d60j-apt2x100d60j-datasheet Description: DIODE MODULE GP 600V 100A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 180 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT2X101DQ100J APT2X101DQ100J Microchip Technology 123802-apt2x101dq100j-apt2x100dq100j-datasheet Description: DIODE MODULE GP 1KV 100A ISOTOP
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT2X101DQ120J APT2X101DQ120J Microchip Technology APT2x101_100DQ120J_D.pdf Description: DIODE MOD GP 1200V 100A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 385 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 100 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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APT2X101DQ60J APT2X101DQ60J Microchip Technology APT2X101_100DQ60J_H.pdf Description: DIODE MODULE GP 600V 100A ISOTOP
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT2X101S20J APT2X101S20J Microchip Technology APT2X101S20J_C.pdf Description: DIODE MOD SCHOT 200V 120A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 200 V
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APT2X30D120J APT2X30D120J Microchip Technology APT2X31_30D120J_C.pdf Description: DIODE MODULE GP 1200V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
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APT2X30D20J APT2X30D20J Microchip Technology 6159-apt2x30d20j-apt2x31d20j-datasheet Description: DIODE MODULE GP 200V 30A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 24 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT2X30D30J APT2X30D30J Microchip Technology 6844-apt2x31d30j-apt2x30d30j-datasheet Description: DIODE MODULE 300V 30A ISOTOP
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APT2X30D60J APT2X30D60J Microchip Technology 6161-apt2x31d60j-apt2x30d60j-datasheet Description: DIODE MODULE GP 600V 30A ISOTOP
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 85 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
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APT2X30DQ60J APT2X30DQ60J Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: DIODE MODULE GP 600V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 105 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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APT2X31D120J APT2X31D120J Microchip Technology 6158-apt2x31d120j-apt2x30d120j-datasheet Description: DIODE MODULE 1.2KV 30A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 370 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT2X31D40J APT2X31D40J Microchip Technology APT2X31_30D40J_F.pdf Description: DIODE MODULE GP 400V 30A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 32 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT2X31D60J APT2X31D60J Microchip Technology 6161-apt2x31d60j-apt2x30d60j-datasheet Description: DIODE MODULE 600V 30A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 85 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT2X31DQ120J APT2X31DQ120J Microchip Technology APT2X3xDQ120J.pdf Description: DIODE MODULE GP 1200V 30A ISOTOP
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT2X31DQ60J APT2X31DQ60J Microchip Technology Description: DIODE MODULE GP 600V 30A ISOTOP
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 105 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT2X31S20J APT2X31S20J Microchip Technology APT2X31S20J_C.pdf Description: DIODE MOD SCHOTT 200V 45A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
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APT2X60D100J APT2X60D100J Microchip Technology 6163-apt2x61d100j-apt2x60d100j-datasheet Description: DIODE MODULE GP 1000V 55A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 55A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 280 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar
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APT2X60D120J APT2X60D120J Microchip Technology 6164-apt2x61d120j-apt2x60d120j-datasheet Description: DIODE MODULE GP 1200V 53A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 53A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT2X60D60J APT2X60D60J Microchip Technology 6854-apt2x61dc60j-apt2x60d60j-datasheet Description: DIODE MODULE GP 600V 60A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 130 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT2X60DQ120J APT2X60DQ120J Microchip Technology APT2X6xDQ120J.pdf Description: DIODE MODULE GP 1200V 60A ISOTOP
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 265 ns
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APT2X60DQ60J APT2X60DQ60J Microchip Technology 6859-apt2x61dq60j-apt2x60dq60j-datasheet Description: DIODE MODULE 600V 60A ISOTOP
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar
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APT2X61D40J APT2X61D40J Microchip Technology APT2X61_60D40J_F.pdf Description: DIODE MODULE GP 400V 60A ISOTOP
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 400 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 37 ns
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APT2X61D60J APT2X61D60J Microchip Technology 6854-apt2x61dc60j-apt2x60d60j-datasheet Description: DIODE MODULE GP 600V 60A ISOTOP
Voltage - DC Reverse (Vr) (Max): 600 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 130 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
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APT2X61DQ100J APT2X61DQ100J Microchip Technology 6857-apt2x61dq100j-apt2x60dq100j-datasheet Description: DIODE MODULE GP 1000V 60A ISOTOP
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 235 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Supplier Device Package: ISOTOP®
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APT2X61DQ120J APT2X61DQ120J Microchip Technology APT2X6xDQ120J.pdf Description: DIODE MODULE GP 1200V 60A ISOTOP
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 265 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT2X61DQ60J APT2X61DQ60J Microchip Technology 6859-apt2x61dq60j-apt2x60dq60j-datasheet Description: DIODE MODULE GP 600V 60A ISOTOP
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT2X61S20J APT2X61S20J Microchip Technology 6860-apt2x61s20j-datasheet Description: DIODE MOD SCHOTT 200V 75A ISOTOP
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 200 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 75A
Diode Configuration: 2 Independent
Technology: Schottky
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Produkt ist nicht verfügbar
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APT30D100BCAG APT30D100BCAG Microchip Technology APT30D100BCA_G.pdf Description: DIODE ARRAY GP 1000V 18A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io) (per Diode): 18A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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APT30D100BCTG APT30D100BCTG Microchip Technology 6175-apt30d100bctg-datasheet Description: DIODE ARRAY GP 1000V 30A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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APT30D100BG APT30D100BG Microchip Technology 6173-apt30d100bg-apt30d100sg-datasheet Description: DIODE STANDARD 1000V 30A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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APT30D100BHBG APT30D100BHBG Microchip Technology 6176-apt30d100bhbg-datasheet Description: DIODE ARRAY GP 1000V 18A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io) (per Diode): 18A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT30D120BCTG APT30D120BCTG Microchip Technology 6861-apt30d120bctg-datasheet Description: DIODE ARRAY GP 1200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Produkt ist nicht verfügbar
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APT30D120BG APT30D120BG Microchip Technology 6177-apt30d120bg-apt30d120sg-datasheet Description: DIODE GEN PURP 1.2KV 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
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APT30D120SG APT30D120SG Microchip Technology 6177-apt30d120bg-apt30d120sg-datasheet Description: DIODE GEN PURP 1.2KV 30A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
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APT30D20BCAG APT30D20BCAG Microchip Technology 6179-apt30d20bcag-datasheet Description: DIODE ARRAY GP 200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
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APT30D20BCTG APT30D20BCTG Microchip Technology 6180-apt30d20bctg-datasheet Description: DIODE ARRAY GP 200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
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APT30D20BG APT30D20BG Microchip Technology 6178-apt30d20bg-apt30d20sg-datasheet Description: DIODE STD 200V 30A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
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APT30D30BG APT30D30BG Microchip Technology 6862-apt30d30bg-datasheet Description: DIODE GP 300V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 300 V
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APT30D40BCTG APT30D40BCTG Microchip Technology 123917-apt30d40bctg-datasheet Description: DIODE ARRAY GP 400V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
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APT30D40BG APT30D40BG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: DIODE GP 400V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
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APT25GP90BDQ1G APT25GP90BDQ1(G)_A.pdf
APT25GP90BDQ1G
Hersteller: Microchip Technology
Description: IGBT PT 900V 72A TO247
Power - Max: 417 W
Current - Collector Pulsed (Icm): 110 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 72 A
Gate Charge: 110 nC
Test Condition: 600V, 40A, 4.3Ohm, 15V
Switching Energy: 370µJ (off)
Td (on/off) @ 25°C: 13ns/55ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT25GP90BG APT25GP90B_D.pdf
APT25GP90BG
Hersteller: Microchip Technology
Description: IGBT PT 900V 72A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/55ns
Switching Energy: 370µJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 417 W
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APT25GT120BRDQ2G 6791-apt25gt120brdq2g-datasheet
APT25GT120BRDQ2G
Hersteller: Microchip Technology
Description: IGBT NPT 1200V 54A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 14ns/150ns
Switching Energy: 930µJ (on), 720µJ (off)
Test Condition: 800V, 25A, 5Ohm, 15V
Gate Charge: 170 nC
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 347 W
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APT25GT120BRG APT25GT120BR%28G%29_D.pdf
APT25GT120BRG
Hersteller: Microchip Technology
Description: IGBT NPT 1200V 54A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 14ns/150ns
Switching Energy: 930µJ (on), 720µJ (off)
Test Condition: 800V, 25A, 5Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 347 W
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APT25M100J 6793-apt25m100j-datasheet
APT25M100J
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 25A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 18A, 10V
Power Dissipation (Max): 545W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9835 pF @ 25 V
Produkt ist nicht verfügbar
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APT26F120B2 6796-apt26f120b2-apt26f120l-datasheet
APT26F120B2
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 27A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: T-MAX™
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Produkt ist nicht verfügbar
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APT26F120L 6796-apt26f120b2-apt26f120l-datasheet
APT26F120L
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 27A TO264
Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
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APT28M120B2 6817-apt28m120b2-apt28m120l-datasheet
APT28M120B2
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 29A T-MAX
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V
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APT28M120L 6817-apt28m120b2-apt28m120l-datasheet
APT28M120L
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 29A TO264
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APT29F100B2 APT29F100B2_L_D.pdf
APT29F100B2
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 30A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 16A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
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APT29F100L APT29F100B2_L_D.pdf
APT29F100L
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 30A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 16A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
Produkt ist nicht verfügbar
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APT29F80J 6822-apt29f80j-datasheet
APT29F80J
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 31A ISOTOP
Produkt ist nicht verfügbar
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APT2X100D40J 123800-apt2x101d40j-apt2x100d40j-datasheet
APT2X100D40J
Hersteller: Microchip Technology
Description: DIODE MODULE 400V 100A ISOTOP
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APT2X100D60J 123801-apt2x101d60j-apt2x100d60j-datasheet
APT2X100D60J
Hersteller: Microchip Technology
Description: DIODE MODULE 600V 100A ISOTOP
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APT2X100DQ120J 123803-apt2x101dq120j-apt2x100dq120j-datasheet
APT2X100DQ120J
Hersteller: Microchip Technology
Description: DIODE MODULE 1.2KV 100A ISOTOP
Produkt ist nicht verfügbar
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APT2X100DQ60J 123683-apt2x101dq60j-apt2x100dq60j-datasheet
APT2X100DQ60J
Hersteller: Microchip Technology
Description: DIODE MODULE 600V 100A ISOTOP
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APT2X101D100J 123642-apt2x101d100j-apt2x100d100j-datasheet
APT2X101D100J
Hersteller: Microchip Technology
Description: DIODE MODULE GP 1000V 95A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 95A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT2X101D120J APT2X101_100D120J_E.pdf
APT2X101D120J
Hersteller: Microchip Technology
Description: DIODE MODULE GP 1200V 93A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 93A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 420 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT2X101D20J 123798-apt2x101d20j-apt2x100d20j-datasheet
APT2X101D20J
Hersteller: Microchip Technology
Description: DIODE MODULE 200V 100A ISOTOP
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APT2X101D40J APT2X101_100D40J_G.pdf
APT2X101D40J
Hersteller: Microchip Technology
Description: DIODE MODULE GP 400V 100A ISOTOP
Current - Reverse Leakage @ Vr: 500 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT2X101D60J 123801-apt2x101d60j-apt2x100d60j-datasheet
APT2X101D60J
Hersteller: Microchip Technology
Description: DIODE MODULE GP 600V 100A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 180 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT2X101DQ100J 123802-apt2x101dq100j-apt2x100dq100j-datasheet
APT2X101DQ100J
Hersteller: Microchip Technology
Description: DIODE MODULE GP 1KV 100A ISOTOP
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT2X101DQ120J APT2x101_100DQ120J_D.pdf
APT2X101DQ120J
Hersteller: Microchip Technology
Description: DIODE MOD GP 1200V 100A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 385 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 100 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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APT2X101DQ60J APT2X101_100DQ60J_H.pdf
APT2X101DQ60J
Hersteller: Microchip Technology
Description: DIODE MODULE GP 600V 100A ISOTOP
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT2X101S20J APT2X101S20J_C.pdf
APT2X101S20J
Hersteller: Microchip Technology
Description: DIODE MOD SCHOT 200V 120A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 200 V
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APT2X30D120J APT2X31_30D120J_C.pdf
APT2X30D120J
Hersteller: Microchip Technology
Description: DIODE MODULE GP 1200V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
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APT2X30D20J 6159-apt2x30d20j-apt2x31d20j-datasheet
APT2X30D20J
Hersteller: Microchip Technology
Description: DIODE MODULE GP 200V 30A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 24 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar
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APT2X30D30J 6844-apt2x31d30j-apt2x30d30j-datasheet
APT2X30D30J
Hersteller: Microchip Technology
Description: DIODE MODULE 300V 30A ISOTOP
Produkt ist nicht verfügbar
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APT2X30D60J 6161-apt2x31d60j-apt2x30d60j-datasheet
APT2X30D60J
Hersteller: Microchip Technology
Description: DIODE MODULE GP 600V 30A ISOTOP
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 85 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar
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APT2X30DQ60J High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT2X30DQ60J
Hersteller: Microchip Technology
Description: DIODE MODULE GP 600V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 105 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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APT2X31D120J 6158-apt2x31d120j-apt2x30d120j-datasheet
APT2X31D120J
Hersteller: Microchip Technology
Description: DIODE MODULE 1.2KV 30A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 370 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT2X31D40J APT2X31_30D40J_F.pdf
APT2X31D40J
Hersteller: Microchip Technology
Description: DIODE MODULE GP 400V 30A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 32 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT2X31D60J 6161-apt2x31d60j-apt2x30d60j-datasheet
APT2X31D60J
Hersteller: Microchip Technology
Description: DIODE MODULE 600V 30A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 85 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT2X31DQ120J APT2X3xDQ120J.pdf
APT2X31DQ120J
Hersteller: Microchip Technology
Description: DIODE MODULE GP 1200V 30A ISOTOP
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT2X31DQ60J
APT2X31DQ60J
Hersteller: Microchip Technology
Description: DIODE MODULE GP 600V 30A ISOTOP
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 105 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT2X31S20J APT2X31S20J_C.pdf
APT2X31S20J
Hersteller: Microchip Technology
Description: DIODE MOD SCHOTT 200V 45A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
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APT2X60D100J 6163-apt2x61d100j-apt2x60d100j-datasheet
APT2X60D100J
Hersteller: Microchip Technology
Description: DIODE MODULE GP 1000V 55A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 55A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 280 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar
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APT2X60D120J 6164-apt2x61d120j-apt2x60d120j-datasheet
APT2X60D120J
Hersteller: Microchip Technology
Description: DIODE MODULE GP 1200V 53A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 53A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT2X60D60J 6854-apt2x61dc60j-apt2x60d60j-datasheet
APT2X60D60J
Hersteller: Microchip Technology
Description: DIODE MODULE GP 600V 60A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 130 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT2X60DQ120J APT2X6xDQ120J.pdf
APT2X60DQ120J
Hersteller: Microchip Technology
Description: DIODE MODULE GP 1200V 60A ISOTOP
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 265 ns
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APT2X60DQ60J 6859-apt2x61dq60j-apt2x60dq60j-datasheet
APT2X60DQ60J
Hersteller: Microchip Technology
Description: DIODE MODULE 600V 60A ISOTOP
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar
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APT2X61D40J APT2X61_60D40J_F.pdf
APT2X61D40J
Hersteller: Microchip Technology
Description: DIODE MODULE GP 400V 60A ISOTOP
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 400 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 37 ns
Produkt ist nicht verfügbar
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APT2X61D60J 6854-apt2x61dc60j-apt2x60d60j-datasheet
APT2X61D60J
Hersteller: Microchip Technology
Description: DIODE MODULE GP 600V 60A ISOTOP
Voltage - DC Reverse (Vr) (Max): 600 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 130 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
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APT2X61DQ100J 6857-apt2x61dq100j-apt2x60dq100j-datasheet
APT2X61DQ100J
Hersteller: Microchip Technology
Description: DIODE MODULE GP 1000V 60A ISOTOP
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 235 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Supplier Device Package: ISOTOP®
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APT2X61DQ120J APT2X6xDQ120J.pdf
APT2X61DQ120J
Hersteller: Microchip Technology
Description: DIODE MODULE GP 1200V 60A ISOTOP
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 265 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT2X61DQ60J 6859-apt2x61dq60j-apt2x60dq60j-datasheet
APT2X61DQ60J
Hersteller: Microchip Technology
Description: DIODE MODULE GP 600V 60A ISOTOP
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT2X61S20J 6860-apt2x61s20j-datasheet
APT2X61S20J
Hersteller: Microchip Technology
Description: DIODE MOD SCHOTT 200V 75A ISOTOP
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 200 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 75A
Diode Configuration: 2 Independent
Technology: Schottky
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Produkt ist nicht verfügbar
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APT30D100BCAG APT30D100BCA_G.pdf
APT30D100BCAG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 1000V 18A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io) (per Diode): 18A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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APT30D100BCTG 6175-apt30d100bctg-datasheet
APT30D100BCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 1000V 30A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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APT30D100BG 6173-apt30d100bg-apt30d100sg-datasheet
APT30D100BG
Hersteller: Microchip Technology
Description: DIODE STANDARD 1000V 30A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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APT30D100BHBG 6176-apt30d100bhbg-datasheet
APT30D100BHBG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 1000V 18A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io) (per Diode): 18A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT30D120BCTG 6861-apt30d120bctg-datasheet
APT30D120BCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 1200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
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APT30D120BG 6177-apt30d120bg-apt30d120sg-datasheet
APT30D120BG
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1.2KV 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
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APT30D120SG 6177-apt30d120bg-apt30d120sg-datasheet
APT30D120SG
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1.2KV 30A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Produkt ist nicht verfügbar
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APT30D20BCAG 6179-apt30d20bcag-datasheet
APT30D20BCAG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
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APT30D20BCTG 6180-apt30d20bctg-datasheet
APT30D20BCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Produkt ist nicht verfügbar
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APT30D20BG 6178-apt30d20bg-apt30d20sg-datasheet
APT30D20BG
Hersteller: Microchip Technology
Description: DIODE STD 200V 30A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
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APT30D30BG 6862-apt30d30bg-datasheet
APT30D30BG
Hersteller: Microchip Technology
Description: DIODE GP 300V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 300 V
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APT30D40BCTG 123917-apt30d40bctg-datasheet
APT30D40BCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 400V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
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APT30D40BG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT30D40BG
Hersteller: Microchip Technology
Description: DIODE GP 400V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
auf Bestellung 345 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.74 EUR
100+4.7 EUR
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