Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (336579) > Seite 378 nach 5610

Wählen Sie Seite:   [  << Vorherige Seite ]  1 373 374 375 376 377 378 379 380 381 382 383 561 1122 1683 2244 2805 3366 3927 4488 5049 5610  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
APT30M19JVFR APT30M19JVFR Microchip Technology 6206-apt30m19jvfr-datasheet Description: MOSFET N-CH 300V 130A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 975 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21600 pF @ 25 V
Produkt ist nicht verfügbar
APT30M19JVR APT30M19JVR Microchip Technology 6207-apt30m19jvr-datasheet Description: MOSFET N-CH 300V 130A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 975 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21600 pF @ 25 V
Produkt ist nicht verfügbar
APT30M40JVFR APT30M40JVFR Microchip Technology 6217-apt30m40jvfr-datasheet Description: MOSFET N-CH 300V 70A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 500mA, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
Produkt ist nicht verfügbar
APT30M40JVR APT30M40JVR Microchip Technology 6218-apt30m40jvr-datasheet Description: MOSFET N-CH 300V 70A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 500mA, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
Produkt ist nicht verfügbar
APT30M60J APT30M60J Microchip Technology 6927-apt30m60j-datasheet Description: MOSFET N-CH 600V 31A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 21A, 10V
Power Dissipation (Max): 355W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
Produkt ist nicht verfügbar
APT30M70BVFRG APT30M70BVFRG Microchip Technology 6930-apt30m70bvfrg-datasheet Description: MOSFET N-CH 300V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5870 pF @ 25 V
Produkt ist nicht verfügbar
APT30M70BVRG APT30M70BVRG Microchip Technology 6930-apt30m70bvfrg-datasheet Description: MOSFET N-CH 300V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5870 pF @ 25 V
Produkt ist nicht verfügbar
APT30M85BVRG APT30M85BVRG Microchip Technology 6227-apt30m85bvrg-datasheet Description: MOSFET N-CH 300V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
Produkt ist nicht verfügbar
APT30S20BCTG APT30S20BCTG Microchip Technology 6934-apt30s20bctg-datasheet Description: DIODE ARR SCHOTT 200V 45A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
auf Bestellung 1266 Stücke:
Lieferzeit 21-28 Tag (e)
3+11.28 EUR
100+ 9.15 EUR
Mindestbestellmenge: 3
APT30S20BG APT30S20BG Microchip Technology 6933-apt30s20bg-apt30s20sg-datasheet Description: DIODE SCHOTTKY 200V 45A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Current - Average Rectified (Io): 45A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Produkt ist nicht verfügbar
APT33GF120B2RDQ2G APT33GF120B2RDQ2G Microchip Technology 6240-apt33gf120b2rdq2g-apt33gf120lrdq2g-datasheet Description: IGBT NPT 1200V 64A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
IGBT Type: NPT
Td (on/off) @ 25°C: 14ns/185ns
Switching Energy: 1.315mJ (on), 1.515mJ (off)
Test Condition: 800V, 25A, 4.3Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 357 W
auf Bestellung 184 Stücke:
Lieferzeit 21-28 Tag (e)
1+43.68 EUR
100+ 35.44 EUR
APT33GF120BRG APT33GF120BRG Microchip Technology 6241-apt33gf120brg-datasheet Description: IGBT 1200V 52A 297W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/210ns
Switching Energy: 2.8mJ (on), 2.8mJ (off)
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 52 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 104 A
Power - Max: 297 W
auf Bestellung 51 Stücke:
Lieferzeit 21-28 Tag (e)
2+21.89 EUR
Mindestbestellmenge: 2
APT33GF120LRDQ2G APT33GF120LRDQ2G Microchip Technology 6240-apt33gf120b2rdq2g-apt33gf120lrdq2g-datasheet Description: IGBT 1200V 64A 357W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
Supplier Device Package: TO-264 [L]
IGBT Type: NPT
Td (on/off) @ 25°C: 14ns/185ns
Switching Energy: 1.315mJ (on), 1.515mJ (off)
Test Condition: 800V, 25A, 4.3Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 357 W
Produkt ist nicht verfügbar
APT34F100B2 APT34F100B2 Microchip Technology 6951-apt34f100b2-apt34f100l-datasheet Description: MOSFET N-CH 1000V 35A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 18A, 10V
Power Dissipation (Max): 1135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9835 pF @ 25 V
Produkt ist nicht verfügbar
APT34N80B2C3G APT34N80B2C3G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 800V 34A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 22A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V
Produkt ist nicht verfügbar
APT34N80LC3G APT34N80LC3G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 800V 34A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 22A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: TO-264 [L]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V
Produkt ist nicht verfügbar
APT35GN120BG APT35GN120BG Microchip Technology 6968-apt35gn120bg-apt35gn120sg-datasheet Description: IGBT 1200V 94A 379W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 24ns/300ns
Switching Energy: 2.315mJ (off)
Test Condition: 800V, 35A, 2.2Ohm, 15V
Gate Charge: 220 nC
Part Status: Active
Current - Collector (Ic) (Max): 94 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 379 W
Produkt ist nicht verfügbar
APT35GN120L2DQ2G APT35GN120L2DQ2G Microchip Technology 6245-apt35gn120l2dq2g-datasheet Description: IGBT 1200V 94A 379W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 24ns/300ns
Switching Energy: 2.315mJ (off)
Test Condition: 800V, 35A, 2.2Ohm, 15V
Gate Charge: 220 nC
Part Status: Active
Current - Collector (Ic) (Max): 94 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 379 W
auf Bestellung 60 Stücke:
Lieferzeit 21-28 Tag (e)
2+25.61 EUR
Mindestbestellmenge: 2
APT35GP120B2DQ2G APT35GP120B2DQ2G Microchip Technology 6246-apt35gp120b2dq2g-datasheet Description: IGBT PT 1200V 96A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/95ns
Switching Energy: 750µJ (on), 680µJ (off)
Test Condition: 600V, 35A, 4.3Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 543 W
auf Bestellung 30 Stücke:
Lieferzeit 21-28 Tag (e)
1+46.72 EUR
APT35GP120BG APT35GP120BG Microchip Technology 6969-apt35gp120bg-datasheet Description: IGBT 1200V 96A 543W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/94ns
Switching Energy: 750µJ (on), 680µJ (off)
Test Condition: 600V, 35A, 5Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 543 W
Produkt ist nicht verfügbar
APT35GP120J APT35GP120J Microchip Technology 123954-apt35gp120j-datasheet Description: IGBT MOD 1200V 64A 284W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 284 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.24 nF @ 25 V
Produkt ist nicht verfügbar
APT35GP120JDQ2 APT35GP120JDQ2 Microchip Technology 123955-apt35gp120jdq2-datasheet Description: IGBT MOD 1200V 64A 284W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 284 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 3.24 nF @ 25 V
Produkt ist nicht verfügbar
APT37F50B APT37F50B Microchip Technology 6980-apt37f50b-apt37f50s-datasheet Description: MOSFET N-CH 500V 37A TO247
auf Bestellung 66 Stücke:
Lieferzeit 21-28 Tag (e)
2+16.15 EUR
Mindestbestellmenge: 2
APT37M100L APT37M100L Microchip Technology 6982-apt37m100b2-apt37m100l-datasheet Description: MOSFET N-CH 1000V 37A TO-264
auf Bestellung 249 Stücke:
Lieferzeit 21-28 Tag (e)
APT38F80L APT38F80L Microchip Technology 6988-apt38f80b2-apt38f80l-datasheet Description: MOSFET N-CH 800V 41A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 20A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8070 pF @ 25 V
auf Bestellung 27 Stücke:
Lieferzeit 21-28 Tag (e)
1+44.54 EUR
APT40DQ100BG APT40DQ100BG Microchip Technology APT40DQ100B%2CS%28G%29.pdf Description: DIODE GEN PURP 1KV 40A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
auf Bestellung 1346 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.85 EUR
100+ 4.74 EUR
Mindestbestellmenge: 5
APT40DQ120BG APT40DQ120BG Microchip Technology 123686-apt40dq120bg-apt40dq120sg-datasheet Description: DIODE GP 1.2KV 40A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 350 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 273 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.38 EUR
100+ 4.38 EUR
Mindestbestellmenge: 5
APT40DQ60BCTG APT40DQ60BCTG Microchip Technology 6263-apt40dq60bctg-datasheet Description: DIODE ARRAY GP 600V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 40 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
APT40DQ60BG APT40DQ60BG Microchip Technology 6262-apt40dq60bg-apt40dq60sg-datasheet Description: DIODE GP 600V 40A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 40 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
auf Bestellung 6291 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.39 EUR
100+ 3.57 EUR
Mindestbestellmenge: 6
APT40GP60BG APT40GP60BG Microchip Technology 6265-apt40gp60bg-apt40gp60sg-datasheet Description: IGBT 600V 100A 543W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/64ns
Switching Energy: 385µJ (on), 352µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 135 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 543 W
Produkt ist nicht verfügbar
APT40GP60JDQ2 APT40GP60JDQ2 Microchip Technology 6268-apt40gp60jdq2-datasheet Description: IGBT MODULE 600V 86A 284W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 284 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 4.61 nF @ 25 V
Produkt ist nicht verfügbar
APT40GP90B2DQ2G APT40GP90B2DQ2G Microchip Technology 6270-apt40gp90b2dq2g-datasheet Description: IGBT 900V 101A 543W TMAX
Produkt ist nicht verfügbar
APT40GP90BG APT40GP90BG Microchip Technology 6269-apt40gp90bg-datasheet Description: IGBT PT 900V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/75ns
Switching Energy: 825µJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 145 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 543 W
Produkt ist nicht verfügbar
APT40GP90JDQ2 APT40GP90JDQ2 Microchip Technology 6272-apt40gp90jdq2-datasheet Description: IGBT MODULE 900V 64A 284W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Power - Max: 284 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Produkt ist nicht verfügbar
APT40GP90J APT40GP90J Microchip Technology 6271-apt40gp90j-datasheet Description: IGBT MODULE 900V 68A 284W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 68 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Power - Max: 284 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Produkt ist nicht verfügbar
APT40GT60BRG APT40GT60BRG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT NPT 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 12ns/124ns
Switching Energy: 828µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 200 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 345 W
auf Bestellung 608 Stücke:
Lieferzeit 21-28 Tag (e)
2+22.62 EUR
Mindestbestellmenge: 2
APT41F100J APT41F100J Microchip Technology 7019-apt41f100j-datasheet Description: MOSFET N-CH 1000V 42A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 33A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 25 V
auf Bestellung 116 Stücke:
Lieferzeit 21-28 Tag (e)
1+162.06 EUR
100+ 131.57 EUR
APT41M80B2 APT41M80B2 Microchip Technology 7022-apt41m80b2-apt41m80l-datasheet Description: MOSFET N-CH 800V 43A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8070 pF @ 25 V
Produkt ist nicht verfügbar
APT41M80L APT41M80L Microchip Technology 7022-apt41m80b2-apt41m80l-datasheet Description: MOSFET N-CH 800V 43A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8070 pF @ 25 V
Produkt ist nicht verfügbar
APT44F80B2 APT44F80B2 Microchip Technology 7042-apt44f80b2-datasheet Description: MOSFET N-CH 800V 47A T-MAX
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
APT44F80L APT44F80L Microchip Technology 7042-apt44f80b2-datasheet Description: MOSFET N-CH 800V 47A TO264
Produkt ist nicht verfügbar
APT45GP120B2DQ2G APT45GP120B2DQ2G Microchip Technology index.php?option=com_docman&task=doc_download&gid=7051 Description: IGBT 1200V 113A 625W TMAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/100ns
Switching Energy: 900µJ (on), 905µJ (off)
Test Condition: 600V, 45A, 5Ohm, 15V
Gate Charge: 185 nC
Part Status: Active
Current - Collector (Ic) (Max): 113 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 170 A
Power - Max: 625 W
auf Bestellung 30 Stücke:
Lieferzeit 21-28 Tag (e)
1+48.88 EUR
APT45GP120BG APT45GP120BG Microchip Technology 6278-apt45gp120bg-datasheet Description: IGBT 1200V 100A 625W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/102ns
Switching Energy: 900µJ (on), 904µJ (off)
Test Condition: 600V, 45A, 5Ohm, 15V
Gate Charge: 185 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 170 A
Power - Max: 625 W
Produkt ist nicht verfügbar
APT45GP120J APT45GP120J Microchip Technology 6279-apt45gp120j-datasheet Description: IGBT MOD 1200V 75A 329W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 329 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 3.94 nF @ 25 V
Produkt ist nicht verfügbar
APT45GP120JDQ2 APT45GP120JDQ2 Microchip Technology 6280-apt45gp120jdq2-datasheet Description: IGBT MOD 1200V 75A 329W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 329 W
Current - Collector Cutoff (Max): 750 µA
Input Capacitance (Cies) @ Vce: 4 nF @ 25 V
auf Bestellung 118 Stücke:
Lieferzeit 21-28 Tag (e)
1+102.67 EUR
100+ 83.35 EUR
APT45M100J APT45M100J Microchip Technology 7053-apt45m100j-datasheet Description: MOSFET N-CH 1000V 45A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 33A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 25 V
Produkt ist nicht verfügbar
APT47M60J APT47M60J Microchip Technology 7064-apt47m60j-datasheet Description: MOSFET N-CH 600V 49A ISOTOP
auf Bestellung 7 Stücke:
Lieferzeit 21-28 Tag (e)
1+74.98 EUR
APT47N60BC3G APT47N60BC3G Microchip Technology 6283-apt47n60bc3g-apt47n60sc3g-datasheet Description: MOSFET N-CH 600V 47A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
auf Bestellung 37 Stücke:
Lieferzeit 21-28 Tag (e)
1+32.42 EUR
APT47N60SC3G APT47N60SC3G Microchip Technology 6283-apt47n60bc3g-apt47n60sc3g-datasheet Description: MOSFET N-CH 600V 47A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
auf Bestellung 80 Stücke:
Lieferzeit 21-28 Tag (e)
1+34.94 EUR
APT48M80B2 APT48M80B2 Microchip Technology 7069-apt48m80b2-datasheet Description: MOSFET N-CH 800V 49A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 24A, 10V
Power Dissipation (Max): 1135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9330 pF @ 25 V
Produkt ist nicht verfügbar
APT48M80L APT48M80L Microchip Technology 7069-apt48m80b2-datasheet Description: MOSFET N-CH 800V 49A TO264
auf Bestellung 25 Stücke:
Lieferzeit 21-28 Tag (e)
1+59.54 EUR
APT5010B2FLLG APT5010B2FLLG Microchip Technology APT5010%28B2%2CL%29FLL.pdf Description: MOSFET N-CH 500V 46A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Produkt ist nicht verfügbar
APT5010B2LLG APT5010B2LLG Microchip Technology 6287-apt5010b2llg-apt5010lllg-datasheet Description: MOSFET N-CH 500V 46A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Produkt ist nicht verfügbar
APT5010JLL APT5010JLL Microchip Technology 6291-apt5010jll-datasheet Description: MOSFET N-CH 500V 41A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Produkt ist nicht verfügbar
APT5010JVFR APT5010JVFR Microchip Technology 6292-apt5010jvfr-datasheet Description: MOSFET N-CH 500V 44A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 470 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
auf Bestellung 21 Stücke:
Lieferzeit 21-28 Tag (e)
1+98.57 EUR
APT5010LFLLG APT5010LFLLG Microchip Technology APT5010%28B2%2CL%29FLL.pdf Description: MOSFET N-CH 500V 46A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
auf Bestellung 9 Stücke:
Lieferzeit 21-28 Tag (e)
1+41.76 EUR
APT5010LLLG APT5010LLLG Microchip Technology 6287-apt5010b2llg-apt5010lllg-datasheet Description: MOSFET N-CH 500V 46A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Produkt ist nicht verfügbar
APT5014BLLG APT5014BLLG Microchip Technology 6299-apt5014bllg-apt5014sllg-datasheet Description: MOSFET N-CH 500V 35A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 17.5A, 10V
Power Dissipation (Max): 403W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3261 pF @ 25 V
auf Bestellung 8 Stücke:
Lieferzeit 21-28 Tag (e)
1+35.31 EUR
APT5014SLLG APT5014SLLG Microchip Technology 6299-apt5014bllg-apt5014sllg-datasheet Description: MOSFET N-CH 500V 35A D3PAK
Produkt ist nicht verfügbar
APT5016BFLLG APT5016BFLLG Microchip Technology 6303-apt5016bfllg-apt5016sfllg-datasheet Description: MOSFET N-CH 500V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 15A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 25 V
Produkt ist nicht verfügbar
APT30M19JVFR 6206-apt30m19jvfr-datasheet
APT30M19JVFR
Hersteller: Microchip Technology
Description: MOSFET N-CH 300V 130A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 975 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21600 pF @ 25 V
Produkt ist nicht verfügbar
APT30M19JVR 6207-apt30m19jvr-datasheet
APT30M19JVR
Hersteller: Microchip Technology
Description: MOSFET N-CH 300V 130A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 975 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21600 pF @ 25 V
Produkt ist nicht verfügbar
APT30M40JVFR 6217-apt30m40jvfr-datasheet
APT30M40JVFR
Hersteller: Microchip Technology
Description: MOSFET N-CH 300V 70A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 500mA, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
Produkt ist nicht verfügbar
APT30M40JVR 6218-apt30m40jvr-datasheet
APT30M40JVR
Hersteller: Microchip Technology
Description: MOSFET N-CH 300V 70A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 500mA, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
Produkt ist nicht verfügbar
APT30M60J 6927-apt30m60j-datasheet
APT30M60J
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 31A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 21A, 10V
Power Dissipation (Max): 355W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
Produkt ist nicht verfügbar
APT30M70BVFRG 6930-apt30m70bvfrg-datasheet
APT30M70BVFRG
Hersteller: Microchip Technology
Description: MOSFET N-CH 300V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5870 pF @ 25 V
Produkt ist nicht verfügbar
APT30M70BVRG 6930-apt30m70bvfrg-datasheet
APT30M70BVRG
Hersteller: Microchip Technology
Description: MOSFET N-CH 300V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5870 pF @ 25 V
Produkt ist nicht verfügbar
APT30M85BVRG 6227-apt30m85bvrg-datasheet
APT30M85BVRG
Hersteller: Microchip Technology
Description: MOSFET N-CH 300V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
Produkt ist nicht verfügbar
APT30S20BCTG 6934-apt30s20bctg-datasheet
APT30S20BCTG
Hersteller: Microchip Technology
Description: DIODE ARR SCHOTT 200V 45A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
auf Bestellung 1266 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+11.28 EUR
100+ 9.15 EUR
Mindestbestellmenge: 3
APT30S20BG 6933-apt30s20bg-apt30s20sg-datasheet
APT30S20BG
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 200V 45A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Current - Average Rectified (Io): 45A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Produkt ist nicht verfügbar
APT33GF120B2RDQ2G 6240-apt33gf120b2rdq2g-apt33gf120lrdq2g-datasheet
APT33GF120B2RDQ2G
Hersteller: Microchip Technology
Description: IGBT NPT 1200V 64A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
IGBT Type: NPT
Td (on/off) @ 25°C: 14ns/185ns
Switching Energy: 1.315mJ (on), 1.515mJ (off)
Test Condition: 800V, 25A, 4.3Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 357 W
auf Bestellung 184 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+43.68 EUR
100+ 35.44 EUR
APT33GF120BRG 6241-apt33gf120brg-datasheet
APT33GF120BRG
Hersteller: Microchip Technology
Description: IGBT 1200V 52A 297W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/210ns
Switching Energy: 2.8mJ (on), 2.8mJ (off)
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 52 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 104 A
Power - Max: 297 W
auf Bestellung 51 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+21.89 EUR
Mindestbestellmenge: 2
APT33GF120LRDQ2G 6240-apt33gf120b2rdq2g-apt33gf120lrdq2g-datasheet
APT33GF120LRDQ2G
Hersteller: Microchip Technology
Description: IGBT 1200V 64A 357W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
Supplier Device Package: TO-264 [L]
IGBT Type: NPT
Td (on/off) @ 25°C: 14ns/185ns
Switching Energy: 1.315mJ (on), 1.515mJ (off)
Test Condition: 800V, 25A, 4.3Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 357 W
Produkt ist nicht verfügbar
APT34F100B2 6951-apt34f100b2-apt34f100l-datasheet
APT34F100B2
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 35A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 18A, 10V
Power Dissipation (Max): 1135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9835 pF @ 25 V
Produkt ist nicht verfügbar
APT34N80B2C3G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT34N80B2C3G
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 34A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 22A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V
Produkt ist nicht verfügbar
APT34N80LC3G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT34N80LC3G
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 34A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 22A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: TO-264 [L]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V
Produkt ist nicht verfügbar
APT35GN120BG 6968-apt35gn120bg-apt35gn120sg-datasheet
APT35GN120BG
Hersteller: Microchip Technology
Description: IGBT 1200V 94A 379W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 24ns/300ns
Switching Energy: 2.315mJ (off)
Test Condition: 800V, 35A, 2.2Ohm, 15V
Gate Charge: 220 nC
Part Status: Active
Current - Collector (Ic) (Max): 94 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 379 W
Produkt ist nicht verfügbar
APT35GN120L2DQ2G 6245-apt35gn120l2dq2g-datasheet
APT35GN120L2DQ2G
Hersteller: Microchip Technology
Description: IGBT 1200V 94A 379W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 24ns/300ns
Switching Energy: 2.315mJ (off)
Test Condition: 800V, 35A, 2.2Ohm, 15V
Gate Charge: 220 nC
Part Status: Active
Current - Collector (Ic) (Max): 94 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 379 W
auf Bestellung 60 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+25.61 EUR
Mindestbestellmenge: 2
APT35GP120B2DQ2G 6246-apt35gp120b2dq2g-datasheet
APT35GP120B2DQ2G
Hersteller: Microchip Technology
Description: IGBT PT 1200V 96A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/95ns
Switching Energy: 750µJ (on), 680µJ (off)
Test Condition: 600V, 35A, 4.3Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 543 W
auf Bestellung 30 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+46.72 EUR
APT35GP120BG 6969-apt35gp120bg-datasheet
APT35GP120BG
Hersteller: Microchip Technology
Description: IGBT 1200V 96A 543W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/94ns
Switching Energy: 750µJ (on), 680µJ (off)
Test Condition: 600V, 35A, 5Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 543 W
Produkt ist nicht verfügbar
APT35GP120J 123954-apt35gp120j-datasheet
APT35GP120J
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 64A 284W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 284 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.24 nF @ 25 V
Produkt ist nicht verfügbar
APT35GP120JDQ2 123955-apt35gp120jdq2-datasheet
APT35GP120JDQ2
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 64A 284W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 284 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 3.24 nF @ 25 V
Produkt ist nicht verfügbar
APT37F50B 6980-apt37f50b-apt37f50s-datasheet
APT37F50B
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 37A TO247
auf Bestellung 66 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+16.15 EUR
Mindestbestellmenge: 2
APT37M100L 6982-apt37m100b2-apt37m100l-datasheet
APT37M100L
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 37A TO-264
auf Bestellung 249 Stücke:
Lieferzeit 21-28 Tag (e)
APT38F80L 6988-apt38f80b2-apt38f80l-datasheet
APT38F80L
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 41A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 20A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8070 pF @ 25 V
auf Bestellung 27 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+44.54 EUR
APT40DQ100BG APT40DQ100B%2CS%28G%29.pdf
APT40DQ100BG
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 40A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
auf Bestellung 1346 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.85 EUR
100+ 4.74 EUR
Mindestbestellmenge: 5
APT40DQ120BG 123686-apt40dq120bg-apt40dq120sg-datasheet
APT40DQ120BG
Hersteller: Microchip Technology
Description: DIODE GP 1.2KV 40A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 350 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 273 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.38 EUR
100+ 4.38 EUR
Mindestbestellmenge: 5
APT40DQ60BCTG 6263-apt40dq60bctg-datasheet
APT40DQ60BCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 600V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 40 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
APT40DQ60BG 6262-apt40dq60bg-apt40dq60sg-datasheet
APT40DQ60BG
Hersteller: Microchip Technology
Description: DIODE GP 600V 40A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 40 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
auf Bestellung 6291 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.39 EUR
100+ 3.57 EUR
Mindestbestellmenge: 6
APT40GP60BG 6265-apt40gp60bg-apt40gp60sg-datasheet
APT40GP60BG
Hersteller: Microchip Technology
Description: IGBT 600V 100A 543W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/64ns
Switching Energy: 385µJ (on), 352µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 135 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 543 W
Produkt ist nicht verfügbar
APT40GP60JDQ2 6268-apt40gp60jdq2-datasheet
APT40GP60JDQ2
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 86A 284W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 284 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 4.61 nF @ 25 V
Produkt ist nicht verfügbar
APT40GP90B2DQ2G 6270-apt40gp90b2dq2g-datasheet
APT40GP90B2DQ2G
Hersteller: Microchip Technology
Description: IGBT 900V 101A 543W TMAX
Produkt ist nicht verfügbar
APT40GP90BG 6269-apt40gp90bg-datasheet
APT40GP90BG
Hersteller: Microchip Technology
Description: IGBT PT 900V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/75ns
Switching Energy: 825µJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 145 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 543 W
Produkt ist nicht verfügbar
APT40GP90JDQ2 6272-apt40gp90jdq2-datasheet
APT40GP90JDQ2
Hersteller: Microchip Technology
Description: IGBT MODULE 900V 64A 284W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Power - Max: 284 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Produkt ist nicht verfügbar
APT40GP90J 6271-apt40gp90j-datasheet
APT40GP90J
Hersteller: Microchip Technology
Description: IGBT MODULE 900V 68A 284W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 68 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Power - Max: 284 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Produkt ist nicht verfügbar
APT40GT60BRG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT40GT60BRG
Hersteller: Microchip Technology
Description: IGBT NPT 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 12ns/124ns
Switching Energy: 828µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 200 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 345 W
auf Bestellung 608 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+22.62 EUR
Mindestbestellmenge: 2
APT41F100J 7019-apt41f100j-datasheet
APT41F100J
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 42A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 33A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 25 V
auf Bestellung 116 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+162.06 EUR
100+ 131.57 EUR
APT41M80B2 7022-apt41m80b2-apt41m80l-datasheet
APT41M80B2
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 43A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8070 pF @ 25 V
Produkt ist nicht verfügbar
APT41M80L 7022-apt41m80b2-apt41m80l-datasheet
APT41M80L
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 43A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8070 pF @ 25 V
Produkt ist nicht verfügbar
APT44F80B2 7042-apt44f80b2-datasheet
APT44F80B2
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 47A T-MAX
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
APT44F80L 7042-apt44f80b2-datasheet
APT44F80L
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 47A TO264
Produkt ist nicht verfügbar
APT45GP120B2DQ2G index.php?option=com_docman&task=doc_download&gid=7051
APT45GP120B2DQ2G
Hersteller: Microchip Technology
Description: IGBT 1200V 113A 625W TMAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/100ns
Switching Energy: 900µJ (on), 905µJ (off)
Test Condition: 600V, 45A, 5Ohm, 15V
Gate Charge: 185 nC
Part Status: Active
Current - Collector (Ic) (Max): 113 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 170 A
Power - Max: 625 W
auf Bestellung 30 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+48.88 EUR
APT45GP120BG 6278-apt45gp120bg-datasheet
APT45GP120BG
Hersteller: Microchip Technology
Description: IGBT 1200V 100A 625W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/102ns
Switching Energy: 900µJ (on), 904µJ (off)
Test Condition: 600V, 45A, 5Ohm, 15V
Gate Charge: 185 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 170 A
Power - Max: 625 W
Produkt ist nicht verfügbar
APT45GP120J 6279-apt45gp120j-datasheet
APT45GP120J
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 75A 329W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 329 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 3.94 nF @ 25 V
Produkt ist nicht verfügbar
APT45GP120JDQ2 6280-apt45gp120jdq2-datasheet
APT45GP120JDQ2
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 75A 329W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 329 W
Current - Collector Cutoff (Max): 750 µA
Input Capacitance (Cies) @ Vce: 4 nF @ 25 V
auf Bestellung 118 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+102.67 EUR
100+ 83.35 EUR
APT45M100J 7053-apt45m100j-datasheet
APT45M100J
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 45A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 33A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 25 V
Produkt ist nicht verfügbar
APT47M60J 7064-apt47m60j-datasheet
APT47M60J
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 49A ISOTOP
auf Bestellung 7 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+74.98 EUR
APT47N60BC3G 6283-apt47n60bc3g-apt47n60sc3g-datasheet
APT47N60BC3G
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 47A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
auf Bestellung 37 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+32.42 EUR
APT47N60SC3G 6283-apt47n60bc3g-apt47n60sc3g-datasheet
APT47N60SC3G
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 47A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
auf Bestellung 80 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+34.94 EUR
APT48M80B2 7069-apt48m80b2-datasheet
APT48M80B2
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 49A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 24A, 10V
Power Dissipation (Max): 1135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9330 pF @ 25 V
Produkt ist nicht verfügbar
APT48M80L 7069-apt48m80b2-datasheet
APT48M80L
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 49A TO264
auf Bestellung 25 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+59.54 EUR
APT5010B2FLLG APT5010%28B2%2CL%29FLL.pdf
APT5010B2FLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 46A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Produkt ist nicht verfügbar
APT5010B2LLG 6287-apt5010b2llg-apt5010lllg-datasheet
APT5010B2LLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 46A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Produkt ist nicht verfügbar
APT5010JLL 6291-apt5010jll-datasheet
APT5010JLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 41A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Produkt ist nicht verfügbar
APT5010JVFR 6292-apt5010jvfr-datasheet
APT5010JVFR
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 44A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 470 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
auf Bestellung 21 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+98.57 EUR
APT5010LFLLG APT5010%28B2%2CL%29FLL.pdf
APT5010LFLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 46A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
auf Bestellung 9 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+41.76 EUR
APT5010LLLG 6287-apt5010b2llg-apt5010lllg-datasheet
APT5010LLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 46A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Produkt ist nicht verfügbar
APT5014BLLG 6299-apt5014bllg-apt5014sllg-datasheet
APT5014BLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 35A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 17.5A, 10V
Power Dissipation (Max): 403W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3261 pF @ 25 V
auf Bestellung 8 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+35.31 EUR
APT5014SLLG 6299-apt5014bllg-apt5014sllg-datasheet
APT5014SLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 35A D3PAK
Produkt ist nicht verfügbar
APT5016BFLLG 6303-apt5016bfllg-apt5016sfllg-datasheet
APT5016BFLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 15A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 25 V
Produkt ist nicht verfügbar
Wählen Sie Seite:   [  << Vorherige Seite ]  1 373 374 375 376 377 378 379 380 381 382 383 561 1122 1683 2244 2805 3366 3927 4488 5049 5610  [ Nächste Seite >> ]