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APT60GT60JR Microchip Technology Description: IGBT MODULE 600V 93A 378W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: NPT
Current - Collector (Ic) (Max): 93 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 378 W
Current - Collector Cutoff (Max): 80 µA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
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APT60M60JFLL APT60M60JFLL Microchip Technology APT60M60JFLL.pdf Description: MOSFET N-CH 600V 70A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 35A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12630 pF @ 25 V
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APT60M60JLL APT60M60JLL Microchip Technology APT60M60JLL.pdf Description: MOSFET N-CH 600V 70A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 12630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 694W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT60M75JFLL APT60M75JFLL Microchip Technology 6442-apt60m75jfll-datasheet Description: MOSFET N-CH 600V 58A ISOTOP
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APT60M75JLL APT60M75JLL Microchip Technology 6443-apt60m75jll-datasheet Description: MOSFET N-CH 600V 58A ISOTOP
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APT60M75JVR APT60M75JVR Microchip Technology 6445-apt60m75jvr-datasheet Description: MOSFET N-CH 600V 62A ISOTOP
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APT60M75L2FLLG APT60M75L2FLLG Microchip Technology 6446-apt60m75l2fllg-datasheet Description: MOSFET N-CH 600V 73A 264 MAX
Input Capacitance (Ciss) (Max) @ Vds: 8930 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 264 MAX™ [L2]
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 893W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 36.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT60M75L2LLG APT60M75L2LLG Microchip Technology 6447-apt60m75l2llg-datasheet Description: MOSFET N-CH 600V 73A 264 MAX
Input Capacitance (Ciss) (Max) @ Vds: 8930 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 264 MAX™ [L2]
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 893W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 36.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT60N60BCSG APT60N60BCSG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
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APT60S20B2CTG APT60S20B2CTG Microchip Technology 7212-apt60s20b2ctg-datasheet Description: DIODE ARRAY SCHOTT 200V 75A TMAX
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: T-MAX™ [B2]
Current - Average Rectified (Io) (per Diode): 75A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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APT60S20BG APT60S20BG Microchip Technology APT60S20B_S(G)_E.PDF Description: DIODE SCHOTTKY 200V 75A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
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APT60S20SG APT60S20SG Microchip Technology 7211-apt60s20bg-apt60s20sg-datasheet Description: DIODE SCHOTTKY 200V 75A D3
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 200 V
Supplier Device Package: D3Pak
Current - Average Rectified (Io): 75A
Technology: Schottky
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
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APT65GP60B2G APT65GP60B2G Microchip Technology APT65GP60B2_A.pdf Description: IGBT PT 600V 100A
Current - Collector Pulsed (Icm): 250 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
Gate Charge: 210 nC
Test Condition: 400V, 65A, 5Ohm, 15V
Switching Energy: 605µJ (on), 896µJ (off)
Td (on/off) @ 25°C: 30ns/91ns
IGBT Type: PT
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Power - Max: 833 W
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APT65GP60J APT65GP60J Microchip Technology 6463-apt65gp60j-a-datasheet Description: IGBT MOD 600V 130A 431W ISOTOP
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Cies) @ Vce: 7.4 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 431 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 130 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
Operating Temperature: -55°C ~ 150°C (TJ)
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APT65GP60L2DQ2G APT65GP60L2DQ2G Microchip Technology 6465-apt65gp60l2dq2g-datasheet Description: IGBT PT 600V 198A
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Power - Max: 833 W
Current - Collector Pulsed (Icm): 250 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 198 A
Part Status: Active
Gate Charge: 210 nC
Test Condition: 400V, 65A, 5Ohm, 15V
Switching Energy: 605µJ (on), 895µJ (off)
Td (on/off) @ 25°C: 30ns/90ns
IGBT Type: PT
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
Input Type: Standard
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APT66M60B2 APT66M60B2 Microchip Technology 7226-apt66m60b2-apt66m60l-datasheet Description: MOSFET N-CH 600V 70A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 33A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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APT66M60L APT66M60L Microchip Technology 7226-apt66m60b2-apt66m60l-datasheet Description: MOSFET N-CH 600V 70A TO264
Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 33A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT75DQ100BG APT75DQ100BG Microchip Technology APT75DQ100.pdf Description: DIODE GEN PURP 1KV 75A TO247
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APT75DQ120BG APT75DQ120BG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: DIODE STD 1200V 75A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 325 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 75 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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APT75DQ60BG APT75DQ60BG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: DIODE STD 600V 75A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 75 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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APT75GN120B2G APT75GN120B2G Microchip Technology 6469-apt75gn120b2g-apt75gn120lg-datasheet Description: IGBT 1200V 200A 833W TMAX
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APT75GN120LG APT75GN120LG Microchip Technology APT75GN120B2_L(G)_C.pdf Description: IGBT TRENCH FS 1200V 200A TO264
Test Condition: 800V, 75A, 1Ohm, 15V
Switching Energy: 8620µJ (on), 11400µJ (off)
Td (on/off) @ 25°C: 60ns/620ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-264 [L]
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Power - Max: 833 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 200 A
Part Status: Active
Gate Charge: 425 nC
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APT75GN60BG APT75GN60BG Microchip Technology apt75gn60b_s(g)_b.pdf Description: IGBT TRENCH FS 600V 155A TO247
Power - Max: 536 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 155 A
Gate Charge: 485 nC
Test Condition: 400V, 75A, 1Ohm, 15V
Switching Energy: 2500µJ (on), 2140µJ (off)
Td (on/off) @ 25°C: 47ns/385ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT75GP120B2G APT75GP120B2G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT PT 1200V 100A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/163ns
Switching Energy: 1620µJ (on), 2500µJ (off)
Test Condition: 600V, 75A, 5Ohm, 15V
Gate Charge: 320 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 1042 W
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APT75GP120J APT75GP120J Microchip Technology 6473-apt75gp120j-datasheet Description: IGBT MOD 1200V 128A 543W ISOTOP
Input Capacitance (Cies) @ Vce: 7.04 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 543 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 128 A
IGBT Type: PT
Package / Case: ISOTOP
Packaging: Tube
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
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APT75GP120JDQ3 APT75GP120JDQ3 Microchip Technology APT75GP120JDQ3-MOS7-PT-IGBT-w-DQ-Diode-Datasheet.pdf Description: IGBT MOD 1200V 128A 543W ISOTOP
Input Capacitance (Cies) @ Vce: 7.04 nF @ 25 V
Current - Collector Cutoff (Max): 1.25 mA
Power - Max: 543 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 128 A
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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APT75GT120JRDQ3 APT75GT120JRDQ3 Microchip Technology 7248-apt75gt120jrdq3-datasheet Description: IGBT MOD 1200V 97A 480W ISOTOP
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 75A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
Current - Collector Cutoff (Max): 200 µA
Power - Max: 480 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 97 A
IGBT Type: NPT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
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APT75M50B2 APT75M50B2 Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 500V 75A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V
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APT75M50L Microchip Technology Description: MOSFET N-CH 500V 75A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 (L)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V
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APT77N60JC3 APT77N60JC3 Microchip Technology 7257-apt77n60jc3-datasheet Description: MOSFET N-CH 600V 77A ISOTOP
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Power Dissipation (Max): 568W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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APT7F100B APT7F100B Microchip Technology 7259-apt7f100b-apt7f100s-datasheet Description: MOSFET N-CH 1000V 7A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 500µA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
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APT7M120B APT7M120B Microchip Technology APT7M120B_S_C.pdf Description: MOSFET N-CH 1200V 8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3A, 10V
Power Dissipation (Max): 335W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 25 V
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APT8014JLL APT8014JLL Microchip Technology APT8014JLL.pdf Description: MOSFET N-CH 800V 42A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 7238 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 595W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
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APT8020B2FLLG APT8020B2FLLG Microchip Technology 7273-apt8020b2fllg-apt8020lfllg-datasheet Description: MOSFET N-CH 800V 38A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 220mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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APT8020B2LLG APT8020B2LLG Microchip Technology 7274-apt8020b2llg-apt8020lllg-datasheet Description: MOSFET N-CH 800V 38A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 19A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
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APT8020JFLL APT8020JFLL Microchip Technology 7275-apt8020jfll-datasheet Description: MOSFET N-CH 800V 33A ISOTOP
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APT8020JLL APT8020JLL Microchip Technology 6486-apt8020jll-datasheet Description: MOSFET N-CH 800V 33A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 16.5A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
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APT8020LFLLG APT8020LFLLG Microchip Technology 7273-apt8020b2fllg-apt8020lfllg-datasheet Description: MOSFET N-CH 800V 38A TO264
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APT8024JLL APT8024JLL Microchip Technology 6488-apt8024jll-datasheet Description: MOSFET N-CH 800V 29A ISOTOP
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APT8024LFLLG APT8024LFLLG Microchip Technology 7276-apt8024b2fllg-apt8024lfllg-datasheet Description: MOSFET N-CH 800V 31A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 15.5A, 10V
Power Dissipation (Max): 565W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 25 V
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APT8052BLLG APT8052BLLG Microchip Technology APT8052B_SLL_B.pdf Description: MOSFET N-CH 800V 15A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 25 V
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APT80GP60J APT80GP60J Microchip Technology APT80GP60J_B.pdf Description: IGBT MOD 600V 151A 462W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 151 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 462 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.84 nF @ 25 V
Produkt ist nicht verfügbar
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APT80M60J APT80M60J Microchip Technology 7296-apt80m60j-datasheet Description: MOSFET N-CH 600V 84A ISOTOP
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APT8DQ60KG APT8DQ60KG Microchip Technology index.php?option=com_docman&task=doc_download&gid=123684 Description: DIODE ULT FAST 600V 8A TO220
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APT8M100B APT8M100B Microchip Technology APT8M100B_S_C.pdf Description: MOSFET N-CH 1000V 8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1885 pF @ 25 V
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100+5.05 EUR
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APT94N60L2C3G APT94N60L2C3G Microchip Technology 7311-apt94n60l2c3-datasheet Description: MOSFET N-CH 600V 94A 264 MAX
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 60A, 10V
Power Dissipation (Max): 833W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: 264 MAX™ [L2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
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APT9F100B APT9F100B Microchip Technology 7316-apt9f100b-apt9f100s-datasheet Description: MOSFET N-CH 1000V 9A TO247
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 337W (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2606 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
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APT9M100B APT9M100B Microchip Technology APT9M100B_S_C.pdf Description: MOSFET N-CH 1000V 9A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2605 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 335W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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KSZ8995MA-EVAL KSZ8995MA-EVAL Microchip Technology KSZ8995MAFQ_DS_Rev3.0.pdf Description: EVAL BOARD FOR KS8995MA
Embedded: No
Secondary Attributes: 2xMII, SNI
Primary Attributes: 5 Ports, 100BASE-TX/100BASE-FX/10BASE-T, Managed
Supplied Contents: Board(s)
Utilized IC / Part: KS8995MA
Type: Interface
Function: Ethernet Controller (PHY and MAC)
Packaging: Bulk
Contents: Board(s)
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ATR0635-EK1 Microchip Technology Description: KIT GPS EVAL
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AT88SC6416CRF-DK Microchip Technology Atmel-5006S-CryptoRF-AT88SC6416CRF-Datasheet-Summary.pdf Description: DEVELOPMENT KIT
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ATNGW100 ATNGW100 Microchip Technology doc32062.pdf description Description: AT32AP7000/7001/7002 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: AVR
Board Type: Evaluation Platform
Utilized IC / Part: AT32AP7000, AT32AP7001, AT32AP7002
Operating System: Linux
Part Status: Obsolete
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MIC5302-1.8YMT-TR MIC5302-1.8YMT-TR Microchip Technology mic5302.pdf Description: IC REG LINEAR 1.8V 150MA 4TMLF
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.1V @ 150mA
PSRR: 65dB ~ 42dB (1kHz ~ 20kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 4-TMLF® (1.2x1.6)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 120 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UFDFN Exposed Pad, 4-TMLF®
Packaging: Tape & Reel (TR)
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MIC5303-1.8YMT-TR MIC5303-1.8YMT-TR Microchip Technology mic5303.pdf Description: IC REG LINEAR 1.8V 300MA 4TMLF
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 300mA
PSRR: 65dB ~ 42dB (1kHz ~ 20kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 4-TMLF® (1.2x1.6)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 120 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-VFDFN Exposed Pad, 4-TMLF®
Packaging: Tape & Reel (TR)
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MIC5307-2.8YD5-TR MIC5307-2.8YD5-TR Microchip Technology mic5307.pdf Description: IC REG LIN 2.8V 300MA TSOT23-5
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.25V @ 300mA
PSRR: 62dB ~ 35dB (10Hz ~ 20kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: TSOT-23-5
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 30 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
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MIC5335-MFYMT-TR MIC5335-MFYMT-TR Microchip Technology MIC5335-Dual-Channel-High-Performance-300mA-microCap-ULDO-DS20006039A.pdf Description: IC REG LINEAR 1.5V/2.8V 6TMLF
Current - Supply (Max): 220 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 300mA, 0.2V @ 300mA
PSRR: 65dB ~ 45dB (1kHz ~ 20kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.5V, 2.8V
Supplier Device Package: 6-TMLF® (1.6x1.6)
Number of Regulators: 2
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 125 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 300mA, 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-UFDFN Exposed Pad, 6-TMLF®
Packaging: Tape & Reel (TR)
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MIC68220YML-TR MIC68220YML-TR Microchip Technology mic68220.pdf Description: IC REG LINEAR POS ADJ 1A 20-MLF
Packaging: Tape & Reel (TR)
Package / Case: 20-VFDFN Exposed Pad, 20-MLF®
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 15 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: 20-MLF® (4x5)
Voltage - Output (Max): 5.5V
Voltage - Output (Min/Fixed): 0.5V or Tracking
Control Features: Enable, Power On Reset, Power Sequencing
Voltage Dropout (Max): 0.4V @ 1A
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 80 mA
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1000+6.9 EUR
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SY88147DLKG SY88147DLKG Microchip Technology sy88147dl.pdf Description: IC POST AMP PECL 3.3V 10-MSOP
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SY89218UHY SY89218UHY Microchip Technology filehandler.aspx?ddocname=en582810 Description: IC CLK BUFFER 2:15 2GHZ 64TQFP
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SY89221UHY SY89221UHY Microchip Technology filehandler.aspx?ddocname=en582813 Description: IC CLK BUFFER 2:15 2GHZ 64TQFP
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APT60GT60JR
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 93A 378W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: NPT
Current - Collector (Ic) (Max): 93 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 378 W
Current - Collector Cutoff (Max): 80 µA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
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APT60M60JFLL APT60M60JFLL.pdf
APT60M60JFLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 70A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 35A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12630 pF @ 25 V
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APT60M60JLL APT60M60JLL.pdf
APT60M60JLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 70A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 12630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 694W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT60M75JFLL 6442-apt60m75jfll-datasheet
APT60M75JFLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 58A ISOTOP
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APT60M75JLL 6443-apt60m75jll-datasheet
APT60M75JLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 58A ISOTOP
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APT60M75JVR 6445-apt60m75jvr-datasheet
APT60M75JVR
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 62A ISOTOP
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APT60M75L2FLLG 6446-apt60m75l2fllg-datasheet
APT60M75L2FLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 73A 264 MAX
Input Capacitance (Ciss) (Max) @ Vds: 8930 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 264 MAX™ [L2]
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 893W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 36.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT60M75L2LLG 6447-apt60m75l2llg-datasheet
APT60M75L2LLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 73A 264 MAX
Input Capacitance (Ciss) (Max) @ Vds: 8930 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 264 MAX™ [L2]
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 893W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 36.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT60N60BCSG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT60N60BCSG
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
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APT60S20B2CTG 7212-apt60s20b2ctg-datasheet
APT60S20B2CTG
Hersteller: Microchip Technology
Description: DIODE ARRAY SCHOTT 200V 75A TMAX
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: T-MAX™ [B2]
Current - Average Rectified (Io) (per Diode): 75A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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APT60S20BG APT60S20B_S(G)_E.PDF
APT60S20BG
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 200V 75A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
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APT60S20SG 7211-apt60s20bg-apt60s20sg-datasheet
APT60S20SG
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 200V 75A D3
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 200 V
Supplier Device Package: D3Pak
Current - Average Rectified (Io): 75A
Technology: Schottky
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
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APT65GP60B2G APT65GP60B2_A.pdf
APT65GP60B2G
Hersteller: Microchip Technology
Description: IGBT PT 600V 100A
Current - Collector Pulsed (Icm): 250 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
Gate Charge: 210 nC
Test Condition: 400V, 65A, 5Ohm, 15V
Switching Energy: 605µJ (on), 896µJ (off)
Td (on/off) @ 25°C: 30ns/91ns
IGBT Type: PT
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Power - Max: 833 W
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APT65GP60J 6463-apt65gp60j-a-datasheet
APT65GP60J
Hersteller: Microchip Technology
Description: IGBT MOD 600V 130A 431W ISOTOP
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Cies) @ Vce: 7.4 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 431 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 130 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
Operating Temperature: -55°C ~ 150°C (TJ)
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APT65GP60L2DQ2G 6465-apt65gp60l2dq2g-datasheet
APT65GP60L2DQ2G
Hersteller: Microchip Technology
Description: IGBT PT 600V 198A
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Power - Max: 833 W
Current - Collector Pulsed (Icm): 250 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 198 A
Part Status: Active
Gate Charge: 210 nC
Test Condition: 400V, 65A, 5Ohm, 15V
Switching Energy: 605µJ (on), 895µJ (off)
Td (on/off) @ 25°C: 30ns/90ns
IGBT Type: PT
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
Input Type: Standard
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APT66M60B2 7226-apt66m60b2-apt66m60l-datasheet
APT66M60B2
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 70A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 33A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Produkt ist nicht verfügbar
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APT66M60L 7226-apt66m60b2-apt66m60l-datasheet
APT66M60L
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 70A TO264
Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 33A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT75DQ100BG APT75DQ100.pdf
APT75DQ100BG
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 75A TO247
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APT75DQ120BG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT75DQ120BG
Hersteller: Microchip Technology
Description: DIODE STD 1200V 75A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 325 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 75 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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APT75DQ60BG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT75DQ60BG
Hersteller: Microchip Technology
Description: DIODE STD 600V 75A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 75 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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APT75GN120B2G 6469-apt75gn120b2g-apt75gn120lg-datasheet
APT75GN120B2G
Hersteller: Microchip Technology
Description: IGBT 1200V 200A 833W TMAX
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APT75GN120LG APT75GN120B2_L(G)_C.pdf
APT75GN120LG
Hersteller: Microchip Technology
Description: IGBT TRENCH FS 1200V 200A TO264
Test Condition: 800V, 75A, 1Ohm, 15V
Switching Energy: 8620µJ (on), 11400µJ (off)
Td (on/off) @ 25°C: 60ns/620ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-264 [L]
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Power - Max: 833 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 200 A
Part Status: Active
Gate Charge: 425 nC
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APT75GN60BG apt75gn60b_s(g)_b.pdf
APT75GN60BG
Hersteller: Microchip Technology
Description: IGBT TRENCH FS 600V 155A TO247
Power - Max: 536 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 155 A
Gate Charge: 485 nC
Test Condition: 400V, 75A, 1Ohm, 15V
Switching Energy: 2500µJ (on), 2140µJ (off)
Td (on/off) @ 25°C: 47ns/385ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT75GP120B2G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT75GP120B2G
Hersteller: Microchip Technology
Description: IGBT PT 1200V 100A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/163ns
Switching Energy: 1620µJ (on), 2500µJ (off)
Test Condition: 600V, 75A, 5Ohm, 15V
Gate Charge: 320 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 1042 W
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APT75GP120J 6473-apt75gp120j-datasheet
APT75GP120J
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 128A 543W ISOTOP
Input Capacitance (Cies) @ Vce: 7.04 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 543 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 128 A
IGBT Type: PT
Package / Case: ISOTOP
Packaging: Tube
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
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APT75GP120JDQ3 APT75GP120JDQ3-MOS7-PT-IGBT-w-DQ-Diode-Datasheet.pdf
APT75GP120JDQ3
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 128A 543W ISOTOP
Input Capacitance (Cies) @ Vce: 7.04 nF @ 25 V
Current - Collector Cutoff (Max): 1.25 mA
Power - Max: 543 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 128 A
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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APT75GT120JRDQ3 7248-apt75gt120jrdq3-datasheet
APT75GT120JRDQ3
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 97A 480W ISOTOP
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 75A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
Current - Collector Cutoff (Max): 200 µA
Power - Max: 480 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 97 A
IGBT Type: NPT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Produkt ist nicht verfügbar
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APT75M50B2 High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT75M50B2
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 75A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V
Produkt ist nicht verfügbar
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APT75M50L
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 75A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 (L)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V
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APT77N60JC3 7257-apt77n60jc3-datasheet
APT77N60JC3
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 77A ISOTOP
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Power Dissipation (Max): 568W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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APT7F100B 7259-apt7f100b-apt7f100s-datasheet
APT7F100B
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 7A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 500µA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Produkt ist nicht verfügbar
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APT7M120B APT7M120B_S_C.pdf
APT7M120B
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3A, 10V
Power Dissipation (Max): 335W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 25 V
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3+7.85 EUR
100+6.37 EUR
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APT8014JLL APT8014JLL.pdf
APT8014JLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 42A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 7238 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 595W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Produkt ist nicht verfügbar
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APT8020B2FLLG 7273-apt8020b2fllg-apt8020lfllg-datasheet
APT8020B2FLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 38A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 220mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Produkt ist nicht verfügbar
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APT8020B2LLG 7274-apt8020b2llg-apt8020lllg-datasheet
APT8020B2LLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 38A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 19A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Produkt ist nicht verfügbar
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APT8020JFLL 7275-apt8020jfll-datasheet
APT8020JFLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 33A ISOTOP
Produkt ist nicht verfügbar
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APT8020JLL 6486-apt8020jll-datasheet
APT8020JLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 33A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 16.5A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
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APT8020LFLLG 7273-apt8020b2fllg-apt8020lfllg-datasheet
APT8020LFLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 38A TO264
Produkt ist nicht verfügbar
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APT8024JLL 6488-apt8024jll-datasheet
APT8024JLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 29A ISOTOP
Produkt ist nicht verfügbar
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APT8024LFLLG 7276-apt8024b2fllg-apt8024lfllg-datasheet
APT8024LFLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 31A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 15.5A, 10V
Power Dissipation (Max): 565W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 25 V
Produkt ist nicht verfügbar
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APT8052BLLG APT8052B_SLL_B.pdf
APT8052BLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 15A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 25 V
Produkt ist nicht verfügbar
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APT80GP60J APT80GP60J_B.pdf
APT80GP60J
Hersteller: Microchip Technology
Description: IGBT MOD 600V 151A 462W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 151 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 462 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.84 nF @ 25 V
Produkt ist nicht verfügbar
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APT80M60J 7296-apt80m60j-datasheet
APT80M60J
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 84A ISOTOP
Produkt ist nicht verfügbar
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APT8DQ60KG index.php?option=com_docman&task=doc_download&gid=123684
APT8DQ60KG
Hersteller: Microchip Technology
Description: DIODE ULT FAST 600V 8A TO220
Produkt ist nicht verfügbar
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APT8M100B APT8M100B_S_C.pdf
APT8M100B
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1885 pF @ 25 V
auf Bestellung 123 Stücke:
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AnzahlPreis
3+6.21 EUR
100+5.05 EUR
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APT94N60L2C3G 7311-apt94n60l2c3-datasheet
APT94N60L2C3G
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 94A 264 MAX
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 60A, 10V
Power Dissipation (Max): 833W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: 264 MAX™ [L2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
Produkt ist nicht verfügbar
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APT9F100B 7316-apt9f100b-apt9f100s-datasheet
APT9F100B
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 9A TO247
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 337W (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2606 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Produkt ist nicht verfügbar
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APT9M100B APT9M100B_S_C.pdf
APT9M100B
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 9A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2605 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 335W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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KSZ8995MA-EVAL KSZ8995MAFQ_DS_Rev3.0.pdf
KSZ8995MA-EVAL
Hersteller: Microchip Technology
Description: EVAL BOARD FOR KS8995MA
Embedded: No
Secondary Attributes: 2xMII, SNI
Primary Attributes: 5 Ports, 100BASE-TX/100BASE-FX/10BASE-T, Managed
Supplied Contents: Board(s)
Utilized IC / Part: KS8995MA
Type: Interface
Function: Ethernet Controller (PHY and MAC)
Packaging: Bulk
Contents: Board(s)
Produkt ist nicht verfügbar
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ATR0635-EK1
Hersteller: Microchip Technology
Description: KIT GPS EVAL
Produkt ist nicht verfügbar
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AT88SC6416CRF-DK Atmel-5006S-CryptoRF-AT88SC6416CRF-Datasheet-Summary.pdf
Hersteller: Microchip Technology
Description: DEVELOPMENT KIT
Produkt ist nicht verfügbar
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ATNGW100 description doc32062.pdf
ATNGW100
Hersteller: Microchip Technology
Description: AT32AP7000/7001/7002 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: AVR
Board Type: Evaluation Platform
Utilized IC / Part: AT32AP7000, AT32AP7001, AT32AP7002
Operating System: Linux
Part Status: Obsolete
Produkt ist nicht verfügbar
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MIC5302-1.8YMT-TR mic5302.pdf
MIC5302-1.8YMT-TR
Hersteller: Microchip Technology
Description: IC REG LINEAR 1.8V 150MA 4TMLF
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.1V @ 150mA
PSRR: 65dB ~ 42dB (1kHz ~ 20kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 4-TMLF® (1.2x1.6)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 120 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UFDFN Exposed Pad, 4-TMLF®
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MIC5303-1.8YMT-TR mic5303.pdf
MIC5303-1.8YMT-TR
Hersteller: Microchip Technology
Description: IC REG LINEAR 1.8V 300MA 4TMLF
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 300mA
PSRR: 65dB ~ 42dB (1kHz ~ 20kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 4-TMLF® (1.2x1.6)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 120 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-VFDFN Exposed Pad, 4-TMLF®
Packaging: Tape & Reel (TR)
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AnzahlPreis
5000+0.88 EUR
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MIC5307-2.8YD5-TR mic5307.pdf
MIC5307-2.8YD5-TR
Hersteller: Microchip Technology
Description: IC REG LIN 2.8V 300MA TSOT23-5
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.25V @ 300mA
PSRR: 62dB ~ 35dB (10Hz ~ 20kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: TSOT-23-5
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 30 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MIC5335-MFYMT-TR MIC5335-Dual-Channel-High-Performance-300mA-microCap-ULDO-DS20006039A.pdf
MIC5335-MFYMT-TR
Hersteller: Microchip Technology
Description: IC REG LINEAR 1.5V/2.8V 6TMLF
Current - Supply (Max): 220 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 300mA, 0.2V @ 300mA
PSRR: 65dB ~ 45dB (1kHz ~ 20kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.5V, 2.8V
Supplier Device Package: 6-TMLF® (1.6x1.6)
Number of Regulators: 2
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 125 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 300mA, 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-UFDFN Exposed Pad, 6-TMLF®
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MIC68220YML-TR mic68220.pdf
MIC68220YML-TR
Hersteller: Microchip Technology
Description: IC REG LINEAR POS ADJ 1A 20-MLF
Packaging: Tape & Reel (TR)
Package / Case: 20-VFDFN Exposed Pad, 20-MLF®
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 15 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: 20-MLF® (4x5)
Voltage - Output (Max): 5.5V
Voltage - Output (Min/Fixed): 0.5V or Tracking
Control Features: Enable, Power On Reset, Power Sequencing
Voltage Dropout (Max): 0.4V @ 1A
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 80 mA
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+6.9 EUR
Mindestbestellmenge: 1000 Stücke
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SY88147DLKG sy88147dl.pdf
SY88147DLKG
Hersteller: Microchip Technology
Description: IC POST AMP PECL 3.3V 10-MSOP
auf Bestellung 115 Stücke:
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SY89218UHY filehandler.aspx?ddocname=en582810
SY89218UHY
Hersteller: Microchip Technology
Description: IC CLK BUFFER 2:15 2GHZ 64TQFP
Produkt ist nicht verfügbar
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SY89221UHY filehandler.aspx?ddocname=en582813
SY89221UHY
Hersteller: Microchip Technology
Description: IC CLK BUFFER 2:15 2GHZ 64TQFP
Produkt ist nicht verfügbar
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