Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (354118) > Seite 381 nach 5902
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APT60DQ100BG | Microchip Technology |
Description: DIODE GEN PURP 1KV 60A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 255 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 60 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
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APT60DQ100LCTG | Microchip Technology |
Description: DIODE ARRAY GP 1000V 60A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 255 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: TO-264 [L] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 60 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
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APT60DQ60BCTG | Microchip Technology |
Description: DIODE ARRAY GP 600V 60A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 60 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
auf Bestellung 446 Stücke: Lieferzeit 10-14 Tag (e) |
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APT60GF120JRDQ3 | Microchip Technology |
Description: IGBT MOD 1200V 149A 625W ISOTOP Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 149 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 625 W Current - Collector Cutoff (Max): 350 µA Input Capacitance (Cies) @ Vce: 7.08 nF @ 25 V |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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APT60GT60BRG | Microchip Technology |
Description: IGBT NPT 600V 100A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A Supplier Device Package: TO-247 [B] IGBT Type: NPT Td (on/off) @ 25°C: 26ns/395ns Switching Energy: 3.4mJ Gate Charge: 275 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 360 A Power - Max: 500 W |
auf Bestellung 1966 Stücke: Lieferzeit 10-14 Tag (e) |
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APT60M60JFLL | Microchip Technology |
Description: MOSFET N-CH 600V 70A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 35A, 10V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: ISOTOP® Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12630 pF @ 25 V |
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APT60M60JLL | Microchip Technology | Description: MOSFET N-CH 600V 70A ISOTOP |
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APT60M75JFLL | Microchip Technology | Description: MOSFET N-CH 600V 58A ISOTOP |
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APT60M75JLL | Microchip Technology | Description: MOSFET N-CH 600V 58A ISOTOP |
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APT60M75JVR | Microchip Technology | Description: MOSFET N-CH 600V 62A ISOTOP |
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APT60M75L2FLLG | Microchip Technology | Description: MOSFET N-CH 600V 73A 264 MAX |
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APT60M75L2LLG | Microchip Technology |
Description: MOSFET N-CH 600V 73A 264 MAX Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 36.5A, 10V Power Dissipation (Max): 893W (Tc) Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: 264 MAX™ [L2] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8930 pF @ 25 V |
auf Bestellung 225 Stücke: Lieferzeit 10-14 Tag (e) |
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APT60N60BCSG | Microchip Technology |
Description: MOSFET N-CH 600V 60A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V Power Dissipation (Max): 431W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 3mA Supplier Device Package: TO-247 [B] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V |
auf Bestellung 134 Stücke: Lieferzeit 10-14 Tag (e) |
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APT60S20B2CTG | Microchip Technology |
Description: DIODE ARRAY SCHOTTKY 200V TMAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 75A Supplier Device Package: T-MAX™ [B2] Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V |
auf Bestellung 169 Stücke: Lieferzeit 10-14 Tag (e) |
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APT60S20BG | Microchip Technology |
Description: DIODE SCHOTTKY 200V 75A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Schottky Current - Average Rectified (Io): 75A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V |
auf Bestellung 1472 Stücke: Lieferzeit 10-14 Tag (e) |
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APT60S20SG | Microchip Technology |
Description: DIODE SCHOTTKY 200V 75A D3 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Schottky Current - Average Rectified (Io): 75A Supplier Device Package: D3Pak Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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APT65GP60B2G | Microchip Technology |
Description: IGBT PT 600V 100A Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A IGBT Type: PT Td (on/off) @ 25°C: 30ns/91ns Switching Energy: 605µJ (on), 896µJ (off) Test Condition: 400V, 65A, 5Ohm, 15V Gate Charge: 210 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 250 A Power - Max: 833 W |
auf Bestellung 115 Stücke: Lieferzeit 10-14 Tag (e) |
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APT65GP60J | Microchip Technology |
Description: IGBT MOD 600V 130A 431W ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 130 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 431 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 7.4 nF @ 25 V |
Produkt ist nicht verfügbar |
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APT65GP60L2DQ2G | Microchip Technology |
Description: IGBT PT 600V 198A Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A IGBT Type: PT Td (on/off) @ 25°C: 30ns/90ns Switching Energy: 605µJ (on), 895µJ (off) Test Condition: 400V, 65A, 5Ohm, 15V Gate Charge: 210 nC Part Status: Active Current - Collector (Ic) (Max): 198 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 250 A Power - Max: 833 W |
auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
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APT66M60B2 | Microchip Technology |
Description: MOSFET N-CH 600V 70A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 33A, 10V Power Dissipation (Max): 1135W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V |
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APT66M60L | Microchip Technology |
Description: MOSFET N-CH 600V 70A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 33A, 10V Power Dissipation (Max): 1135W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-264 [L] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V |
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APT75DQ100BG | Microchip Technology | Description: DIODE GEN PURP 1KV 75A TO247 |
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APT75DQ120BG | Microchip Technology |
Description: DIODE GP 1.2KV 75A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 325 ns Technology: Standard Current - Average Rectified (Io): 75A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 75 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
auf Bestellung 5738 Stücke: Lieferzeit 10-14 Tag (e) |
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APT75DQ60BG | Microchip Technology |
Description: DIODE GP 600V 75A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 31 ns Technology: Standard Current - Average Rectified (Io): 75A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 75 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
auf Bestellung 23267 Stücke: Lieferzeit 10-14 Tag (e) |
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APT75GN120B2G | Microchip Technology | Description: IGBT 1200V 200A 833W TMAX |
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APT75GN120LG | Microchip Technology |
Description: IGBT 1200V 200A 833W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: TO-264 [L] IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 60ns/620ns Switching Energy: 8620µJ (on), 11400µJ (off) Test Condition: 800V, 75A, 1Ohm, 15V Gate Charge: 425 nC Part Status: Active Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 225 A Power - Max: 833 W |
auf Bestellung 141 Stücke: Lieferzeit 10-14 Tag (e) |
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APT75GN60BG | Microchip Technology |
Description: IGBT TRENCH FS 600V 155A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A Supplier Device Package: TO-247 [B] IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 47ns/385ns Switching Energy: 2500µJ (on), 2140µJ (off) Test Condition: 400V, 75A, 1Ohm, 15V Gate Charge: 485 nC Current - Collector (Ic) (Max): 155 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 225 A Power - Max: 536 W |
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APT75GP120B2G | Microchip Technology |
Description: IGBT 1200V 100A 1042W TMAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A IGBT Type: PT Td (on/off) @ 25°C: 20ns/163ns Switching Energy: 1620µJ (on), 2500µJ (off) Test Condition: 600V, 75A, 5Ohm, 15V Gate Charge: 320 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 300 A Power - Max: 1042 W |
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APT75GP120J | Microchip Technology |
Description: IGBT MOD 1200V 128A 543W ISOTOP Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: PT Current - Collector (Ic) (Max): 128 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 543 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 7.04 nF @ 25 V |
Produkt ist nicht verfügbar |
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APT75GP120JDQ3 | Microchip Technology |
Description: IGBT MOD 1200V 128A 543W ISOTOP Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: PT Current - Collector (Ic) (Max): 128 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 543 W Current - Collector Cutoff (Max): 1.25 mA Input Capacitance (Cies) @ Vce: 7.04 nF @ 25 V |
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APT75GT120JRDQ3 | Microchip Technology | Description: IGBT MOD 1200V 97A 480W ISOTOP |
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APT75M50B2 | Microchip Technology | Description: MOSFET N-CH 500V 75A T-MAX |
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APT75M50L | Microchip Technology |
Description: MOSFET N-CH 500V 75A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-264 [L] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V |
auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) |
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APT77N60JC3 | Microchip Technology |
Description: MOSFET N-CH 600V 77A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 60A, 10V Power Dissipation (Max): 568W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Supplier Device Package: ISOTOP® Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V |
auf Bestellung 183 Stücke: Lieferzeit 10-14 Tag (e) |
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APT7F100B | Microchip Technology |
Description: MOSFET N-CH 1000V 7A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 4A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 5V @ 500µA Supplier Device Package: TO-247 [B] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
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APT8014JLL | Microchip Technology | Description: MOSFET N-CH 800V 42A ISOTOP |
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APT8020B2FLLG | Microchip Technology | Description: MOSFET N-CH 800V 38A T-MAX |
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APT8020B2LLG | Microchip Technology | Description: MOSFET N-CH 800V 38A T-MAX |
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APT8020JFLL | Microchip Technology | Description: MOSFET N-CH 800V 33A ISOTOP |
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APT8020JLL | Microchip Technology |
Description: MOSFET N-CH 800V 33A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 16.5A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: ISOTOP® Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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APT8020LFLLG | Microchip Technology | Description: MOSFET N-CH 800V 38A TO264 |
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APT8024JLL | Microchip Technology | Description: MOSFET N-CH 800V 29A ISOTOP |
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APT8024LFLLG | Microchip Technology |
Description: MOSFET N-CH 800V 31A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 15.5A, 10V Power Dissipation (Max): 565W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-264 [L] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 25 V |
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APT8052BLLG | Microchip Technology |
Description: MOSFET N-CH 800V 15A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Part Status: Active Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 25 V |
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APT80GP60J | Microchip Technology |
Description: IGBT MOD 600V 151A 462W ISOTOP Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 151 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 462 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 9.84 nF @ 25 V |
auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
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APT80M60J | Microchip Technology | Description: MOSFET N-CH 600V 84A ISOTOP |
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APT8DQ60KG | Microchip Technology | Description: DIODE ULT FAST 600V 8A TO220 |
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APT8M100B | Microchip Technology |
Description: MOSFET N-CH 1000V 8A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1885 pF @ 25 V |
auf Bestellung 541 Stücke: Lieferzeit 10-14 Tag (e) |
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APT94N60L2C3G | Microchip Technology |
Description: MOSFET N-CH 600V 94A 264 MAX Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 60A, 10V Power Dissipation (Max): 833W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Supplier Device Package: 264 MAX™ [L2] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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APT9M100B | Microchip Technology | Description: MOSFET N-CH 1000V 9A TO-247 |
Produkt ist nicht verfügbar |
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KSZ8995MA-EVAL | Microchip Technology |
Description: BOARD EVAL EXPERIMENT KSZ8995MA Packaging: Bulk Function: Ethernet Controller (PHY and MAC) Type: Interface Utilized IC / Part: KS8995MA Supplied Contents: Board(s) Primary Attributes: 5 Ports, 100BASE-TX/100BASE-FX/10BASE-T, Managed Secondary Attributes: 2xMII, SNI Embedded: No Contents: Board(s) |
Produkt ist nicht verfügbar |
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ATR0635-EK1 | Microchip Technology | Description: KIT GPS EVAL |
Produkt ist nicht verfügbar |
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AT88SC6416CRF-DK | Microchip Technology | Description: DEVELOPMENT KIT |
Produkt ist nicht verfügbar |
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ATNGW100 | Microchip Technology |
Description: AT32AP7000/7001/7002 EVAL BRD Packaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s) Core Processor: AVR Board Type: Evaluation Platform Utilized IC / Part: AT32AP7000, AT32AP7001, AT32AP7002 Operating System: Linux Part Status: Obsolete |
Produkt ist nicht verfügbar |
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MIC5302-1.8YMT-TR | Microchip Technology |
Description: IC REG LINEAR 1.8V 150MA 4TMLF Packaging: Tape & Reel (TR) Package / Case: 4-UFDFN Exposed Pad, 4-TMLF® Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 120 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-TMLF® (1.2x1.6) Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Part Status: Active PSRR: 65dB ~ 42dB (1kHz ~ 20kHz) Voltage Dropout (Max): 0.1V @ 150mA Protection Features: Over Current, Over Temperature |
Produkt ist nicht verfügbar |
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MIC5303-1.8YMT-TR | Microchip Technology |
Description: IC REG LINEAR 1.8V 300MA 4TMLF Packaging: Tape & Reel (TR) Package / Case: 4-VFDFN Exposed Pad, 4-TMLF® Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 120 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-TMLF® (1.2x1.6) Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Part Status: Active PSRR: 65dB ~ 42dB (1kHz ~ 20kHz) Voltage Dropout (Max): 0.2V @ 300mA Protection Features: Over Current, Over Temperature |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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MIC5307-2.8YD5-TR | Microchip Technology |
Description: IC REG LIN 2.8V 300MA TSOT23-5 Packaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 30 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: TSOT-23-5 Voltage - Output (Min/Fixed): 2.8V Control Features: Enable Part Status: Active PSRR: 62dB ~ 35dB (10Hz ~ 20kHz) Voltage Dropout (Max): 0.25V @ 300mA Protection Features: Over Current, Over Temperature |
Produkt ist nicht verfügbar |
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MIC5335-MFYMT-TR | Microchip Technology |
Description: IC REG LINEAR 1.5V/2.8V 6TMLF Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad, 6-TMLF® Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA, 300mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 125 µA Voltage - Input (Max): 5.5V Number of Regulators: 2 Supplier Device Package: 6-TMLF® (1.6x1.6) Voltage - Output (Min/Fixed): 1.5V, 2.8V Control Features: Enable PSRR: 65dB ~ 45dB (1kHz ~ 20kHz) Voltage Dropout (Max): 0.2V @ 300mA, 0.2V @ 300mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 220 µA |
Produkt ist nicht verfügbar |
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MIC68220YML-TR | Microchip Technology |
Description: IC REG LINEAR POS ADJ 1A 20MLF Packaging: Tape & Reel (TR) Package / Case: 20-VFDFN Exposed Pad, 20-MLF® Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 15 mA Voltage - Input (Max): 5.5V Number of Regulators: 2 Supplier Device Package: 20-MLF® (4x5) Voltage - Output (Max): 5.5V Voltage - Output (Min/Fixed): 0.5V or Tracking Control Features: Enable, Power On Reset, Power Sequencing Voltage Dropout (Max): 0.4V @ 1A Protection Features: Over Current, Over Temperature, Reverse Polarity Current - Supply (Max): 80 mA |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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SY88147DLKG | Microchip Technology | Description: IC POST AMP PECL 3.3V 10-MSOP |
auf Bestellung 115 Stücke: Lieferzeit 10-14 Tag (e) |
APT60DQ100BG |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 255 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Description: DIODE GEN PURP 1KV 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 255 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Produkt ist nicht verfügbar
APT60DQ100LCTG |
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 1000V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 255 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264 [L]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Description: DIODE ARRAY GP 1000V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 255 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264 [L]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Produkt ist nicht verfügbar
APT60DQ60BCTG |
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE ARRAY GP 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
auf Bestellung 446 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.76 EUR |
100+ | 5.47 EUR |
APT60GF120JRDQ3 |
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 149A 625W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 149 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 625 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 7.08 nF @ 25 V
Description: IGBT MOD 1200V 149A 625W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 149 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 625 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 7.08 nF @ 25 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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1+ | 188.71 EUR |
APT60GT60BRG |
Hersteller: Microchip Technology
Description: IGBT NPT 600V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 26ns/395ns
Switching Energy: 3.4mJ
Gate Charge: 275 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 500 W
Description: IGBT NPT 600V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 26ns/395ns
Switching Energy: 3.4mJ
Gate Charge: 275 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 500 W
auf Bestellung 1966 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 18.18 EUR |
APT60M60JFLL |
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 70A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 35A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12630 pF @ 25 V
Description: MOSFET N-CH 600V 70A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 35A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12630 pF @ 25 V
Produkt ist nicht verfügbar
APT60M60JLL |
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 70A ISOTOP
Description: MOSFET N-CH 600V 70A ISOTOP
Produkt ist nicht verfügbar
APT60M75JFLL |
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 58A ISOTOP
Description: MOSFET N-CH 600V 58A ISOTOP
Produkt ist nicht verfügbar
APT60M75JLL |
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 58A ISOTOP
Description: MOSFET N-CH 600V 58A ISOTOP
Produkt ist nicht verfügbar
APT60M75JVR |
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 62A ISOTOP
Description: MOSFET N-CH 600V 62A ISOTOP
Produkt ist nicht verfügbar
APT60M75L2FLLG |
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 73A 264 MAX
Description: MOSFET N-CH 600V 73A 264 MAX
Produkt ist nicht verfügbar
APT60M75L2LLG |
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 73A 264 MAX
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 36.5A, 10V
Power Dissipation (Max): 893W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: 264 MAX™ [L2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8930 pF @ 25 V
Description: MOSFET N-CH 600V 73A 264 MAX
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 36.5A, 10V
Power Dissipation (Max): 893W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: 264 MAX™ [L2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8930 pF @ 25 V
auf Bestellung 225 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 83.11 EUR |
APT60N60BCSG |
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Description: MOSFET N-CH 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
auf Bestellung 134 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 32.05 EUR |
100+ | 26.02 EUR |
APT60S20B2CTG |
Hersteller: Microchip Technology
Description: DIODE ARRAY SCHOTTKY 200V TMAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: T-MAX™ [B2]
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Description: DIODE ARRAY SCHOTTKY 200V TMAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: T-MAX™ [B2]
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
auf Bestellung 169 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 13.08 EUR |
100+ | 10.59 EUR |
APT60S20BG |
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 200V 75A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Description: DIODE SCHOTTKY 200V 75A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
auf Bestellung 1472 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.12 EUR |
100+ | 4.98 EUR |
APT60S20SG |
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 200V 75A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Current - Average Rectified (Io): 75A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Description: DIODE SCHOTTKY 200V 75A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Current - Average Rectified (Io): 75A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)APT65GP60B2G |
Hersteller: Microchip Technology
Description: IGBT PT 600V 100A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/91ns
Switching Energy: 605µJ (on), 896µJ (off)
Test Condition: 400V, 65A, 5Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 833 W
Description: IGBT PT 600V 100A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/91ns
Switching Energy: 605µJ (on), 896µJ (off)
Test Condition: 400V, 65A, 5Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 833 W
auf Bestellung 115 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 29.85 EUR |
APT65GP60J |
Hersteller: Microchip Technology
Description: IGBT MOD 600V 130A 431W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 431 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 7.4 nF @ 25 V
Description: IGBT MOD 600V 130A 431W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 431 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 7.4 nF @ 25 V
Produkt ist nicht verfügbar
APT65GP60L2DQ2G |
Hersteller: Microchip Technology
Description: IGBT PT 600V 198A
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/90ns
Switching Energy: 605µJ (on), 895µJ (off)
Test Condition: 400V, 65A, 5Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 198 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 833 W
Description: IGBT PT 600V 198A
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/90ns
Switching Energy: 605µJ (on), 895µJ (off)
Test Condition: 400V, 65A, 5Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 198 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 833 W
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 33.97 EUR |
APT66M60B2 |
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 70A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 33A, 10V
Power Dissipation (Max): 1135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V
Description: MOSFET N-CH 600V 70A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 33A, 10V
Power Dissipation (Max): 1135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V
Produkt ist nicht verfügbar
APT66M60L |
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 70A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 33A, 10V
Power Dissipation (Max): 1135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V
Description: MOSFET N-CH 600V 70A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 33A, 10V
Power Dissipation (Max): 1135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V
Produkt ist nicht verfügbar
APT75DQ100BG |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 75A TO247
Description: DIODE GEN PURP 1KV 75A TO247
Produkt ist nicht verfügbar
APT75DQ120BG |
Hersteller: Microchip Technology
Description: DIODE GP 1.2KV 75A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 325 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 75 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GP 1.2KV 75A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 325 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 75 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 5738 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.21 EUR |
100+ | 4.21 EUR |
APT75DQ60BG |
Hersteller: Microchip Technology
Description: DIODE GP 600V 75A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 75 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE GP 600V 75A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 75 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
auf Bestellung 23267 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 4.35 EUR |
100+ | 3.52 EUR |
APT75GN120B2G |
Hersteller: Microchip Technology
Description: IGBT 1200V 200A 833W TMAX
Description: IGBT 1200V 200A 833W TMAX
Produkt ist nicht verfügbar
APT75GN120LG |
Hersteller: Microchip Technology
Description: IGBT 1200V 200A 833W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-264 [L]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 60ns/620ns
Switching Energy: 8620µJ (on), 11400µJ (off)
Test Condition: 800V, 75A, 1Ohm, 15V
Gate Charge: 425 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 833 W
Description: IGBT 1200V 200A 833W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-264 [L]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 60ns/620ns
Switching Energy: 8620µJ (on), 11400µJ (off)
Test Condition: 800V, 75A, 1Ohm, 15V
Gate Charge: 425 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 833 W
auf Bestellung 141 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 28.79 EUR |
100+ | 23.39 EUR |
APT75GN60BG |
Hersteller: Microchip Technology
Description: IGBT TRENCH FS 600V 155A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 47ns/385ns
Switching Energy: 2500µJ (on), 2140µJ (off)
Test Condition: 400V, 75A, 1Ohm, 15V
Gate Charge: 485 nC
Current - Collector (Ic) (Max): 155 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 536 W
Description: IGBT TRENCH FS 600V 155A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 47ns/385ns
Switching Energy: 2500µJ (on), 2140µJ (off)
Test Condition: 400V, 75A, 1Ohm, 15V
Gate Charge: 485 nC
Current - Collector (Ic) (Max): 155 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 536 W
Produkt ist nicht verfügbar
APT75GP120B2G |
Hersteller: Microchip Technology
Description: IGBT 1200V 100A 1042W TMAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/163ns
Switching Energy: 1620µJ (on), 2500µJ (off)
Test Condition: 600V, 75A, 5Ohm, 15V
Gate Charge: 320 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 1042 W
Description: IGBT 1200V 100A 1042W TMAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/163ns
Switching Energy: 1620µJ (on), 2500µJ (off)
Test Condition: 600V, 75A, 5Ohm, 15V
Gate Charge: 320 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 1042 W
Produkt ist nicht verfügbar
APT75GP120J |
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 128A 543W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Current - Collector (Ic) (Max): 128 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 543 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 7.04 nF @ 25 V
Description: IGBT MOD 1200V 128A 543W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Current - Collector (Ic) (Max): 128 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 543 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 7.04 nF @ 25 V
Produkt ist nicht verfügbar
APT75GP120JDQ3 |
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 128A 543W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Current - Collector (Ic) (Max): 128 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 543 W
Current - Collector Cutoff (Max): 1.25 mA
Input Capacitance (Cies) @ Vce: 7.04 nF @ 25 V
Description: IGBT MOD 1200V 128A 543W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Current - Collector (Ic) (Max): 128 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 543 W
Current - Collector Cutoff (Max): 1.25 mA
Input Capacitance (Cies) @ Vce: 7.04 nF @ 25 V
Produkt ist nicht verfügbar
APT75GT120JRDQ3 |
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 97A 480W ISOTOP
Description: IGBT MOD 1200V 97A 480W ISOTOP
Produkt ist nicht verfügbar
APT75M50B2 |
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 75A T-MAX
Description: MOSFET N-CH 500V 75A T-MAX
Produkt ist nicht verfügbar
APT75M50L |
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 75A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V
Description: MOSFET N-CH 500V 75A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 24.13 EUR |
APT77N60JC3 |
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 77A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 60A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
Description: MOSFET N-CH 600V 77A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 60A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
auf Bestellung 183 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 62.16 EUR |
100+ | 50.46 EUR |
APT7F100B |
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 7A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 4A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 1000V 7A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 4A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
APT8014JLL |
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 42A ISOTOP
Description: MOSFET N-CH 800V 42A ISOTOP
Produkt ist nicht verfügbar
APT8020B2FLLG |
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 38A T-MAX
Description: MOSFET N-CH 800V 38A T-MAX
Produkt ist nicht verfügbar
APT8020B2LLG |
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 38A T-MAX
Description: MOSFET N-CH 800V 38A T-MAX
Produkt ist nicht verfügbar
APT8020JFLL |
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 33A ISOTOP
Description: MOSFET N-CH 800V 33A ISOTOP
Produkt ist nicht verfügbar
APT8020JLL |
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 33A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 16.5A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Description: MOSFET N-CH 800V 33A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 16.5A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 83.44 EUR |
APT8020LFLLG |
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 38A TO264
Description: MOSFET N-CH 800V 38A TO264
Produkt ist nicht verfügbar
APT8024JLL |
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 29A ISOTOP
Description: MOSFET N-CH 800V 29A ISOTOP
Produkt ist nicht verfügbar
APT8024LFLLG |
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 31A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 15.5A, 10V
Power Dissipation (Max): 565W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 25 V
Description: MOSFET N-CH 800V 31A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 15.5A, 10V
Power Dissipation (Max): 565W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 25 V
Produkt ist nicht verfügbar
APT8052BLLG |
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 15A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 25 V
Description: MOSFET N-CH 800V 15A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 25 V
Produkt ist nicht verfügbar
APT80GP60J |
Hersteller: Microchip Technology
Description: IGBT MOD 600V 151A 462W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 151 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 462 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.84 nF @ 25 V
Description: IGBT MOD 600V 151A 462W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 151 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 462 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.84 nF @ 25 V
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 67.32 EUR |
APT80M60J |
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 84A ISOTOP
Description: MOSFET N-CH 600V 84A ISOTOP
Produkt ist nicht verfügbar
APT8DQ60KG |
Hersteller: Microchip Technology
Description: DIODE ULT FAST 600V 8A TO220
Description: DIODE ULT FAST 600V 8A TO220
Produkt ist nicht verfügbar
APT8M100B |
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1885 pF @ 25 V
Description: MOSFET N-CH 1000V 8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1885 pF @ 25 V
auf Bestellung 541 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 7.16 EUR |
100+ | 5.81 EUR |
APT94N60L2C3G |
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 94A 264 MAX
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 60A, 10V
Power Dissipation (Max): 833W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: 264 MAX™ [L2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
Description: MOSFET N-CH 600V 94A 264 MAX
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 60A, 10V
Power Dissipation (Max): 833W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: 264 MAX™ [L2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 43.26 EUR |
APT9M100B |
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 9A TO-247
Description: MOSFET N-CH 1000V 9A TO-247
Produkt ist nicht verfügbar
KSZ8995MA-EVAL |
Hersteller: Microchip Technology
Description: BOARD EVAL EXPERIMENT KSZ8995MA
Packaging: Bulk
Function: Ethernet Controller (PHY and MAC)
Type: Interface
Utilized IC / Part: KS8995MA
Supplied Contents: Board(s)
Primary Attributes: 5 Ports, 100BASE-TX/100BASE-FX/10BASE-T, Managed
Secondary Attributes: 2xMII, SNI
Embedded: No
Contents: Board(s)
Description: BOARD EVAL EXPERIMENT KSZ8995MA
Packaging: Bulk
Function: Ethernet Controller (PHY and MAC)
Type: Interface
Utilized IC / Part: KS8995MA
Supplied Contents: Board(s)
Primary Attributes: 5 Ports, 100BASE-TX/100BASE-FX/10BASE-T, Managed
Secondary Attributes: 2xMII, SNI
Embedded: No
Contents: Board(s)
Produkt ist nicht verfügbar
AT88SC6416CRF-DK |
Hersteller: Microchip Technology
Description: DEVELOPMENT KIT
Description: DEVELOPMENT KIT
Produkt ist nicht verfügbar
ATNGW100 |
Hersteller: Microchip Technology
Description: AT32AP7000/7001/7002 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: AVR
Board Type: Evaluation Platform
Utilized IC / Part: AT32AP7000, AT32AP7001, AT32AP7002
Operating System: Linux
Part Status: Obsolete
Description: AT32AP7000/7001/7002 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: AVR
Board Type: Evaluation Platform
Utilized IC / Part: AT32AP7000, AT32AP7001, AT32AP7002
Operating System: Linux
Part Status: Obsolete
Produkt ist nicht verfügbar
MIC5302-1.8YMT-TR |
Hersteller: Microchip Technology
Description: IC REG LINEAR 1.8V 150MA 4TMLF
Packaging: Tape & Reel (TR)
Package / Case: 4-UFDFN Exposed Pad, 4-TMLF®
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 120 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-TMLF® (1.2x1.6)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 65dB ~ 42dB (1kHz ~ 20kHz)
Voltage Dropout (Max): 0.1V @ 150mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.8V 150MA 4TMLF
Packaging: Tape & Reel (TR)
Package / Case: 4-UFDFN Exposed Pad, 4-TMLF®
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 120 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-TMLF® (1.2x1.6)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 65dB ~ 42dB (1kHz ~ 20kHz)
Voltage Dropout (Max): 0.1V @ 150mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
MIC5303-1.8YMT-TR |
Hersteller: Microchip Technology
Description: IC REG LINEAR 1.8V 300MA 4TMLF
Packaging: Tape & Reel (TR)
Package / Case: 4-VFDFN Exposed Pad, 4-TMLF®
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 120 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-TMLF® (1.2x1.6)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 65dB ~ 42dB (1kHz ~ 20kHz)
Voltage Dropout (Max): 0.2V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.8V 300MA 4TMLF
Packaging: Tape & Reel (TR)
Package / Case: 4-VFDFN Exposed Pad, 4-TMLF®
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 120 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-TMLF® (1.2x1.6)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 65dB ~ 42dB (1kHz ~ 20kHz)
Voltage Dropout (Max): 0.2V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.97 EUR |
MIC5307-2.8YD5-TR |
Hersteller: Microchip Technology
Description: IC REG LIN 2.8V 300MA TSOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: TSOT-23-5
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 62dB ~ 35dB (10Hz ~ 20kHz)
Voltage Dropout (Max): 0.25V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LIN 2.8V 300MA TSOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: TSOT-23-5
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 62dB ~ 35dB (10Hz ~ 20kHz)
Voltage Dropout (Max): 0.25V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
MIC5335-MFYMT-TR |
Hersteller: Microchip Technology
Description: IC REG LINEAR 1.5V/2.8V 6TMLF
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad, 6-TMLF®
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA, 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: 6-TMLF® (1.6x1.6)
Voltage - Output (Min/Fixed): 1.5V, 2.8V
Control Features: Enable
PSRR: 65dB ~ 45dB (1kHz ~ 20kHz)
Voltage Dropout (Max): 0.2V @ 300mA, 0.2V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 220 µA
Description: IC REG LINEAR 1.5V/2.8V 6TMLF
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad, 6-TMLF®
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA, 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: 6-TMLF® (1.6x1.6)
Voltage - Output (Min/Fixed): 1.5V, 2.8V
Control Features: Enable
PSRR: 65dB ~ 45dB (1kHz ~ 20kHz)
Voltage Dropout (Max): 0.2V @ 300mA, 0.2V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 220 µA
Produkt ist nicht verfügbar
MIC68220YML-TR |
Hersteller: Microchip Technology
Description: IC REG LINEAR POS ADJ 1A 20MLF
Packaging: Tape & Reel (TR)
Package / Case: 20-VFDFN Exposed Pad, 20-MLF®
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 15 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: 20-MLF® (4x5)
Voltage - Output (Max): 5.5V
Voltage - Output (Min/Fixed): 0.5V or Tracking
Control Features: Enable, Power On Reset, Power Sequencing
Voltage Dropout (Max): 0.4V @ 1A
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 80 mA
Description: IC REG LINEAR POS ADJ 1A 20MLF
Packaging: Tape & Reel (TR)
Package / Case: 20-VFDFN Exposed Pad, 20-MLF®
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 15 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: 20-MLF® (4x5)
Voltage - Output (Max): 5.5V
Voltage - Output (Min/Fixed): 0.5V or Tracking
Control Features: Enable, Power On Reset, Power Sequencing
Voltage Dropout (Max): 0.4V @ 1A
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 80 mA
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 7.45 EUR |
SY88147DLKG |
Hersteller: Microchip Technology
Description: IC POST AMP PECL 3.3V 10-MSOP
Description: IC POST AMP PECL 3.3V 10-MSOP
auf Bestellung 115 Stücke:
Lieferzeit 10-14 Tag (e)