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APT50M75B2LLG APT50M75B2LLG Microchip Technology 6350-apt50m75b2llg-apt50m75lllg-datasheet Description: MOSFET N-CH 500V 57A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 570W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 28.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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APT50M75JFLL APT50M75JFLL Microchip Technology 6351-apt50m75jfll-datasheet Description: MOSFET N-CH 500V 51A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT50M75LLLG APT50M75LLLG Microchip Technology 6350-apt50m75b2llg-apt50m75lllg-datasheet Description: MOSFET N-CH 500V 57A TO264
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 75mOhm @ 28.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT51M50J APT51M50J Microchip Technology 7132-apt51m50j-datasheet Description: MOSFET N-CH 500V 51A ISOTOP
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APT53F80J APT53F80J Microchip Technology APT53F80J_D.pdf Description: MOSFET N-CH 800V 57A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 17550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 960W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT56M50L APT56M50L Microchip Technology 7153-apt56m50b2-apt56m50l-datasheet Description: MOSFET N-CH 500V 56A TO264
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT56M60L Microchip Technology Description: MOSFET N-CH 600V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 28A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
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APT58M50J APT58M50J Microchip Technology 7162-apt58m50j-datasheet Description: MOSFET N-CH 500V 58A ISOTOP
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APT58M80J APT58M80J Microchip Technology APT58M80J_C.pdf Description: MOSFET N-CH 800V 60A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 17550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 960W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT6010B2LLG APT6010B2LLG Microchip Technology APT6010B2_LLL(G)_F.pdf Description: MOSFET N-CH 600V 54A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 690W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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APT6010JFLL APT6010JFLL Microchip Technology 7173-apt6010jfll-datasheet Description: MOSFET N-CH 600V 47A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 100mOhm @ 23.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT6010JLL APT6010JLL Microchip Technology 7174-apt6010jll-datasheet Description: MOSFET N-CH 600V 47A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 100mOhm @ 23.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT6010LLLG APT6010LLLG Microchip Technology 7172-apt6010b2llg-apt6010lllg-datasheet Description: MOSFET N-CH 600V 54A TO264
Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
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APT6013JFLL APT6013JFLL Microchip Technology 6390-apt6013jfll-datasheet Description: MOSFET N-CH 600V 39A ISOTOP
Rds On (Max) @ Id, Vgs: 130mOhm @ 19.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 2.5mA
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APT6013JLL APT6013JLL Microchip Technology 6391-apt6013jll-datasheet Description: MOSFET N-CH 600V 39A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 19.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT6013LLLG APT6013LLLG Microchip Technology 7175-apt6013b2llg-apt6013lllg-datasheet Description: MOSFET N-CH 600V 43A TO264
Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 565W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 21.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT6017JFLL APT6017JFLL Microchip Technology 6400-apt6017jfll-datasheet Description: MOSFET N-CH 600V 31A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 170mOhm @ 15.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT6021BFLLG APT6021BFLLG Microchip Technology 6404-apt6021bfllg-apt6021sfllg-datasheet Description: MOSFET N-CH 600V 29A TO247
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Rds On (Max) @ Id, Vgs: 210mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT6021BLLG APT6021BLLG Microchip Technology 6405-apt6021bllg-apt6021sllg-datasheet Description: MOSFET N-CH 600V 29A TO247
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APT6029BFLLG APT6029BFLLG Microchip Technology 6412-apt6029bfllg-apt6029sfllg-datasheet Description: MOSFET N-CH 600V 21A TO-247
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APT6029BLLG APT6029BLLG Microchip Technology 6413-apt6029bllg-apt6029sllg-datasheet Description: MOSFET N-CH 600V 21A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2615 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT6038BFLLG APT6038BFLLG Microchip Technology 6419-apt6038bfllg-apt6038sfllg-datasheet Description: MOSFET N-CH 600V 17A TO-247
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APT6038BLLG APT6038BLLG Microchip Technology 6420-apt6038bllg-apt6038sllg-datasheet Description: MOSFET N-CH 600V 17A TO-247
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APT60D100BG APT60D100BG Microchip Technology 6423-apt60d100bg-apt60d100sg-datasheet Description: DIODE STD 1000V 60A TO247 [B]
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 280 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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APT60D100LCTG APT60D100LCTG Microchip Technology 6424-apt60d100lctg-datasheet Description: DIODE ARRAY GP 1000V 60A TO264
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-264 [L]
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 280 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT60D100SG APT60D100SG Microchip Technology 6423-apt60d100bg-apt60d100sg-datasheet Description: DIODE GEN PURP 1KV 60A D3
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: D3Pak
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 280 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
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APT60D120BG APT60D120BG Microchip Technology 6425-apt60d120bg-apt60d120sg-datasheet Description: DIODE STD 1200V 60A TO247 [B]
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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APT60D120SG APT60D120SG Microchip Technology 6425-apt60d120bg-apt60d120sg-datasheet Description: DIODE GEN PURP 1.2KV 60A D3
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: D3Pak
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
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APT60D20BG APT60D20BG Microchip Technology 6426-apt60d20bg-apt60d20sg-datasheet Description: DIODE STD 200V 60A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
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APT60D40BG APT60D40BG Microchip Technology 6430-apt60d40bg-apt60d40sg-datasheet Description: DIODE GP 400V 60A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 37 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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APT60D40LCTG APT60D40LCTG Microchip Technology 6431-apt60d40lctg-datasheet Description: DIODE ARRAY GP 400V 60A TO264
Packaging: Tube
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-264 [L]
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 37 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
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APT60D60BG APT60D60BG Microchip Technology Microsemi_APT60D60BG_Datasheet_L.pdf Description: DIODE STD 600V 60A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
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APT60D60LCTG APT60D60LCTG Microchip Technology 7183-apt60d60lctg-datasheet Description: DIODE ARRAY GP 600V 60A TO264
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-264 [L]
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 130 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT60DQ100BG APT60DQ100BG Microchip Technology 123788-apt60dq100b-s-g-b-pdf Description: DIODE GEN PURP 1KV 60A TO247
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 255 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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APT60DQ100LCTG APT60DQ100LCTG Microchip Technology 123692-apt60dq100lctg-datasheet Description: DIODE ARRAY GP 1000V 60A TO264
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-264 [L]
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 255 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 60 A
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APT60DQ60BCTG APT60DQ60BCTG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: DIODE ARRAY GP 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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APT60GF120JRDQ3 APT60GF120JRDQ3 Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT MOD 1200V 149A 625W ISOTOP
Input Capacitance (Cies) @ Vce: 7.08 nF @ 25 V
Current - Collector Cutoff (Max): 350 µA
Power - Max: 625 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 149 A
Part Status: Active
IGBT Type: NPT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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APT60GT60BRG APT60GT60BRG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT NPT 600V 100A TO247
Power - Max: 500 W
Current - Collector Pulsed (Icm): 360 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
Gate Charge: 275 nC
Switching Energy: 3.4mJ
Td (on/off) @ 25°C: 26ns/395ns
IGBT Type: NPT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT60GT60JR Microchip Technology Description: IGBT MODULE 600V 93A 378W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: NPT
Current - Collector (Ic) (Max): 93 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 378 W
Current - Collector Cutoff (Max): 80 µA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
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APT60M60JFLL APT60M60JFLL Microchip Technology APT60M60JFLL.pdf Description: MOSFET N-CH 600V 70A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 35A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12630 pF @ 25 V
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APT60M60JLL APT60M60JLL Microchip Technology APT60M60JLL.pdf Description: MOSFET N-CH 600V 70A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 12630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 694W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT60M75JFLL APT60M75JFLL Microchip Technology 6442-apt60m75jfll-datasheet Description: MOSFET N-CH 600V 58A ISOTOP
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APT60M75JLL APT60M75JLL Microchip Technology 6443-apt60m75jll-datasheet Description: MOSFET N-CH 600V 58A ISOTOP
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APT60M75JVR APT60M75JVR Microchip Technology 6445-apt60m75jvr-datasheet Description: MOSFET N-CH 600V 62A ISOTOP
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APT60M75L2FLLG APT60M75L2FLLG Microchip Technology 6446-apt60m75l2fllg-datasheet Description: MOSFET N-CH 600V 73A 264 MAX
Input Capacitance (Ciss) (Max) @ Vds: 8930 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 264 MAX™ [L2]
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 893W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 36.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT60M75L2LLG APT60M75L2LLG Microchip Technology 6447-apt60m75l2llg-datasheet Description: MOSFET N-CH 600V 73A 264 MAX
Input Capacitance (Ciss) (Max) @ Vds: 8930 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 264 MAX™ [L2]
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 893W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 36.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT60N60BCSG APT60N60BCSG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
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APT60S20B2CTG APT60S20B2CTG Microchip Technology 7212-apt60s20b2ctg-datasheet Description: DIODE ARRAY SCHOTT 200V 75A TMAX
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: T-MAX™ [B2]
Current - Average Rectified (Io) (per Diode): 75A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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APT60S20BG APT60S20BG Microchip Technology APT60S20B_S(G)_E.PDF Description: DIODE SCHOTTKY 200V 75A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
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APT60S20SG APT60S20SG Microchip Technology 7211-apt60s20bg-apt60s20sg-datasheet Description: DIODE SCHOTTKY 200V 75A D3
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 200 V
Supplier Device Package: D3Pak
Current - Average Rectified (Io): 75A
Technology: Schottky
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
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APT65GP60B2G APT65GP60B2G Microchip Technology APT65GP60B2_A.pdf Description: IGBT PT 600V 100A
Current - Collector Pulsed (Icm): 250 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
Gate Charge: 210 nC
Test Condition: 400V, 65A, 5Ohm, 15V
Switching Energy: 605µJ (on), 896µJ (off)
Td (on/off) @ 25°C: 30ns/91ns
IGBT Type: PT
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Power - Max: 833 W
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APT65GP60J APT65GP60J Microchip Technology 6463-apt65gp60j-a-datasheet Description: IGBT MOD 600V 130A 431W ISOTOP
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Cies) @ Vce: 7.4 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 431 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 130 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
Operating Temperature: -55°C ~ 150°C (TJ)
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APT65GP60L2DQ2G APT65GP60L2DQ2G Microchip Technology 6465-apt65gp60l2dq2g-datasheet Description: IGBT PT 600V 198A
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Power - Max: 833 W
Current - Collector Pulsed (Icm): 250 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 198 A
Part Status: Active
Gate Charge: 210 nC
Test Condition: 400V, 65A, 5Ohm, 15V
Switching Energy: 605µJ (on), 895µJ (off)
Td (on/off) @ 25°C: 30ns/90ns
IGBT Type: PT
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
Input Type: Standard
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APT66M60B2 APT66M60B2 Microchip Technology 7226-apt66m60b2-apt66m60l-datasheet Description: MOSFET N-CH 600V 70A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 33A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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APT66M60L APT66M60L Microchip Technology 7226-apt66m60b2-apt66m60l-datasheet Description: MOSFET N-CH 600V 70A TO264
Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 33A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT75DQ100BG APT75DQ100BG Microchip Technology APT75DQ100.pdf Description: DIODE GEN PURP 1KV 75A TO247
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APT75DQ120BG APT75DQ120BG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: DIODE STD 1200V 75A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 325 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 75 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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APT75DQ60BG APT75DQ60BG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: DIODE STD 600V 75A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 75 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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APT75GN120B2G APT75GN120B2G Microchip Technology 6469-apt75gn120b2g-apt75gn120lg-datasheet Description: IGBT 1200V 200A 833W TMAX
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APT75GN120LG APT75GN120LG Microchip Technology APT75GN120B2_L(G)_C.pdf Description: IGBT TRENCH FS 1200V 200A TO264
Test Condition: 800V, 75A, 1Ohm, 15V
Switching Energy: 8620µJ (on), 11400µJ (off)
Td (on/off) @ 25°C: 60ns/620ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-264 [L]
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Power - Max: 833 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 200 A
Part Status: Active
Gate Charge: 425 nC
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APT50M75B2LLG 6350-apt50m75b2llg-apt50m75lllg-datasheet
APT50M75B2LLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 57A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 570W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 28.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Produkt ist nicht verfügbar
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APT50M75JFLL 6351-apt50m75jfll-datasheet
APT50M75JFLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 51A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar
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APT50M75LLLG 6350-apt50m75b2llg-apt50m75lllg-datasheet
APT50M75LLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 57A TO264
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 75mOhm @ 28.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
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APT51M50J 7132-apt51m50j-datasheet
APT51M50J
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 51A ISOTOP
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APT53F80J APT53F80J_D.pdf
APT53F80J
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 57A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 17550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 960W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT56M50L 7153-apt56m50b2-apt56m50l-datasheet
APT56M50L
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 56A TO264
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT56M60L
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 28A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
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APT58M50J 7162-apt58m50j-datasheet
APT58M50J
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 58A ISOTOP
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APT58M80J APT58M80J_C.pdf
APT58M80J
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 60A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 17550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 960W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT6010B2LLG APT6010B2_LLL(G)_F.pdf
APT6010B2LLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 54A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 690W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Produkt ist nicht verfügbar
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APT6010JFLL 7173-apt6010jfll-datasheet
APT6010JFLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 47A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 100mOhm @ 23.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT6010JLL 7174-apt6010jll-datasheet
APT6010JLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 47A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 100mOhm @ 23.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar
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APT6010LLLG 7172-apt6010b2llg-apt6010lllg-datasheet
APT6010LLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 54A TO264
Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
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APT6013JFLL 6390-apt6013jfll-datasheet
APT6013JFLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 39A ISOTOP
Rds On (Max) @ Id, Vgs: 130mOhm @ 19.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 2.5mA
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APT6013JLL 6391-apt6013jll-datasheet
APT6013JLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 39A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 19.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar
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APT6013LLLG 7175-apt6013b2llg-apt6013lllg-datasheet
APT6013LLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 43A TO264
Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 565W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 21.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT6017JFLL 6400-apt6017jfll-datasheet
APT6017JFLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 31A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 170mOhm @ 15.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar
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APT6021BFLLG 6404-apt6021bfllg-apt6021sfllg-datasheet
APT6021BFLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 29A TO247
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Rds On (Max) @ Id, Vgs: 210mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT6021BLLG 6405-apt6021bllg-apt6021sllg-datasheet
APT6021BLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 29A TO247
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APT6029BFLLG 6412-apt6029bfllg-apt6029sfllg-datasheet
APT6029BFLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 21A TO-247
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APT6029BLLG 6413-apt6029bllg-apt6029sllg-datasheet
APT6029BLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 21A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2615 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT6038BFLLG 6419-apt6038bfllg-apt6038sfllg-datasheet
APT6038BFLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 17A TO-247
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APT6038BLLG 6420-apt6038bllg-apt6038sllg-datasheet
APT6038BLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 17A TO-247
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APT60D100BG 6423-apt60d100bg-apt60d100sg-datasheet
APT60D100BG
Hersteller: Microchip Technology
Description: DIODE STD 1000V 60A TO247 [B]
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 280 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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APT60D100LCTG 6424-apt60d100lctg-datasheet
APT60D100LCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 1000V 60A TO264
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-264 [L]
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 280 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
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APT60D100SG 6423-apt60d100bg-apt60d100sg-datasheet
APT60D100SG
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 60A D3
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: D3Pak
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 280 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
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APT60D120BG 6425-apt60d120bg-apt60d120sg-datasheet
APT60D120BG
Hersteller: Microchip Technology
Description: DIODE STD 1200V 60A TO247 [B]
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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APT60D120SG 6425-apt60d120bg-apt60d120sg-datasheet
APT60D120SG
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1.2KV 60A D3
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: D3Pak
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
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APT60D20BG 6426-apt60d20bg-apt60d20sg-datasheet
APT60D20BG
Hersteller: Microchip Technology
Description: DIODE STD 200V 60A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
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APT60D40BG 6430-apt60d40bg-apt60d40sg-datasheet
APT60D40BG
Hersteller: Microchip Technology
Description: DIODE GP 400V 60A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 37 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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APT60D40LCTG 6431-apt60d40lctg-datasheet
APT60D40LCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 400V 60A TO264
Packaging: Tube
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-264 [L]
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 37 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Produkt ist nicht verfügbar
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APT60D60BG Microsemi_APT60D60BG_Datasheet_L.pdf
APT60D60BG
Hersteller: Microchip Technology
Description: DIODE STD 600V 60A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
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APT60D60LCTG 7183-apt60d60lctg-datasheet
APT60D60LCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 600V 60A TO264
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-264 [L]
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 130 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT60DQ100BG 123788-apt60dq100b-s-g-b-pdf
APT60DQ100BG
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 60A TO247
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 255 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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APT60DQ100LCTG 123692-apt60dq100lctg-datasheet
APT60DQ100LCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 1000V 60A TO264
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-264 [L]
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 255 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 60 A
Produkt ist nicht verfügbar
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APT60DQ60BCTG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT60DQ60BCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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APT60GF120JRDQ3 High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT60GF120JRDQ3
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 149A 625W ISOTOP
Input Capacitance (Cies) @ Vce: 7.08 nF @ 25 V
Current - Collector Cutoff (Max): 350 µA
Power - Max: 625 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 149 A
Part Status: Active
IGBT Type: NPT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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APT60GT60BRG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT60GT60BRG
Hersteller: Microchip Technology
Description: IGBT NPT 600V 100A TO247
Power - Max: 500 W
Current - Collector Pulsed (Icm): 360 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
Gate Charge: 275 nC
Switching Energy: 3.4mJ
Td (on/off) @ 25°C: 26ns/395ns
IGBT Type: NPT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT60GT60JR
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 93A 378W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: NPT
Current - Collector (Ic) (Max): 93 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 378 W
Current - Collector Cutoff (Max): 80 µA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
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APT60M60JFLL APT60M60JFLL.pdf
APT60M60JFLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 70A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 35A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12630 pF @ 25 V
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APT60M60JLL APT60M60JLL.pdf
APT60M60JLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 70A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 12630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 694W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT60M75JFLL 6442-apt60m75jfll-datasheet
APT60M75JFLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 58A ISOTOP
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APT60M75JLL 6443-apt60m75jll-datasheet
APT60M75JLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 58A ISOTOP
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APT60M75JVR 6445-apt60m75jvr-datasheet
APT60M75JVR
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 62A ISOTOP
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APT60M75L2FLLG 6446-apt60m75l2fllg-datasheet
APT60M75L2FLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 73A 264 MAX
Input Capacitance (Ciss) (Max) @ Vds: 8930 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 264 MAX™ [L2]
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 893W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 36.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT60M75L2LLG 6447-apt60m75l2llg-datasheet
APT60M75L2LLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 73A 264 MAX
Input Capacitance (Ciss) (Max) @ Vds: 8930 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 264 MAX™ [L2]
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 893W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 36.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT60N60BCSG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT60N60BCSG
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
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APT60S20B2CTG 7212-apt60s20b2ctg-datasheet
APT60S20B2CTG
Hersteller: Microchip Technology
Description: DIODE ARRAY SCHOTT 200V 75A TMAX
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: T-MAX™ [B2]
Current - Average Rectified (Io) (per Diode): 75A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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APT60S20BG APT60S20B_S(G)_E.PDF
APT60S20BG
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 200V 75A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
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APT60S20SG 7211-apt60s20bg-apt60s20sg-datasheet
APT60S20SG
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 200V 75A D3
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 200 V
Supplier Device Package: D3Pak
Current - Average Rectified (Io): 75A
Technology: Schottky
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
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APT65GP60B2G APT65GP60B2_A.pdf
APT65GP60B2G
Hersteller: Microchip Technology
Description: IGBT PT 600V 100A
Current - Collector Pulsed (Icm): 250 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
Gate Charge: 210 nC
Test Condition: 400V, 65A, 5Ohm, 15V
Switching Energy: 605µJ (on), 896µJ (off)
Td (on/off) @ 25°C: 30ns/91ns
IGBT Type: PT
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Power - Max: 833 W
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APT65GP60J 6463-apt65gp60j-a-datasheet
APT65GP60J
Hersteller: Microchip Technology
Description: IGBT MOD 600V 130A 431W ISOTOP
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Cies) @ Vce: 7.4 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 431 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 130 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
Operating Temperature: -55°C ~ 150°C (TJ)
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APT65GP60L2DQ2G 6465-apt65gp60l2dq2g-datasheet
APT65GP60L2DQ2G
Hersteller: Microchip Technology
Description: IGBT PT 600V 198A
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Power - Max: 833 W
Current - Collector Pulsed (Icm): 250 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 198 A
Part Status: Active
Gate Charge: 210 nC
Test Condition: 400V, 65A, 5Ohm, 15V
Switching Energy: 605µJ (on), 895µJ (off)
Td (on/off) @ 25°C: 30ns/90ns
IGBT Type: PT
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
Input Type: Standard
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APT66M60B2 7226-apt66m60b2-apt66m60l-datasheet
APT66M60B2
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 70A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 33A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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APT66M60L 7226-apt66m60b2-apt66m60l-datasheet
APT66M60L
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 70A TO264
Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 33A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT75DQ100BG APT75DQ100.pdf
APT75DQ100BG
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 75A TO247
Produkt ist nicht verfügbar
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APT75DQ120BG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT75DQ120BG
Hersteller: Microchip Technology
Description: DIODE STD 1200V 75A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 325 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 75 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 1699 Stücke:
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AnzahlPrivatkunde
4+5.71 EUR
100+4.63 EUR
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APT75DQ60BG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT75DQ60BG
Hersteller: Microchip Technology
Description: DIODE STD 600V 75A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 75 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
auf Bestellung 18318 Stücke:
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5+4.76 EUR
100+3.87 EUR
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APT75GN120B2G 6469-apt75gn120b2g-apt75gn120lg-datasheet
APT75GN120B2G
Hersteller: Microchip Technology
Description: IGBT 1200V 200A 833W TMAX
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
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APT75GN120LG APT75GN120B2_L(G)_C.pdf
APT75GN120LG
Hersteller: Microchip Technology
Description: IGBT TRENCH FS 1200V 200A TO264
Test Condition: 800V, 75A, 1Ohm, 15V
Switching Energy: 8620µJ (on), 11400µJ (off)
Td (on/off) @ 25°C: 60ns/620ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-264 [L]
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Power - Max: 833 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 200 A
Part Status: Active
Gate Charge: 425 nC
auf Bestellung 108 Stücke:
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1+29.38 EUR
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