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APT30D100BCAG APT30D100BCAG Microchip Technology APT30D100BCA_G.pdf Description: DIODE ARRAY GP 1000V 18A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io) (per Diode): 18A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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APT30D100BCTG APT30D100BCTG Microchip Technology 6175-apt30d100bctg-datasheet Description: DIODE ARRAY GP 1000V 30A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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APT30D100BG APT30D100BG Microchip Technology 6173-apt30d100bg-apt30d100sg-datasheet Description: DIODE STANDARD 1000V 30A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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APT30D100BHBG APT30D100BHBG Microchip Technology 6176-apt30d100bhbg-datasheet Description: DIODE ARRAY GP 1000V 18A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io) (per Diode): 18A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT30D120BCTG APT30D120BCTG Microchip Technology 6861-apt30d120bctg-datasheet Description: DIODE ARRAY GP 1200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Produkt ist nicht verfügbar
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APT30D120BG APT30D120BG Microchip Technology 6177-apt30d120bg-apt30d120sg-datasheet Description: DIODE GEN PURP 1.2KV 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
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APT30D120SG APT30D120SG Microchip Technology 6177-apt30d120bg-apt30d120sg-datasheet Description: DIODE GEN PURP 1.2KV 30A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
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APT30D20BCAG APT30D20BCAG Microchip Technology 6179-apt30d20bcag-datasheet Description: DIODE ARRAY GP 200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
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APT30D20BCTG APT30D20BCTG Microchip Technology 6180-apt30d20bctg-datasheet Description: DIODE ARRAY GP 200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
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APT30D20BG APT30D20BG Microchip Technology 6178-apt30d20bg-apt30d20sg-datasheet Description: DIODE STD 200V 30A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
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APT30D30BG APT30D30BG Microchip Technology 6862-apt30d30bg-datasheet Description: DIODE GP 300V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 300 V
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APT30D40BCTG APT30D40BCTG Microchip Technology 123917-apt30d40bctg-datasheet Description: DIODE ARRAY GP 400V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Produkt ist nicht verfügbar
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APT30D40BG APT30D40BG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: DIODE GP 400V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
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APT30D40SG APT30D40SG Microchip Technology 6181-apt30d40b-s-g-f-pdf Description: DIODE GEN PURP 400V 30A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
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APT30D60BCAG APT30D60BCAG Microchip Technology 6184-apt30d60bcag-datasheet Description: DIODE ARRAY GP 600V 27A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 27A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
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APT30D60BCTG APT30D60BCTG Microchip Technology 6185-apt30d60bctg-datasheet Description: DIODE ARRAY GP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
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APT30D60BG APT30D60BG Microchip Technology Microsemi_APT30D60BG_Fast_Soft_Recovery_Rectifier_Diode_I.pdf Description: DIODE STD 600V 30A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
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APT30D60BHBG APT30D60BHBG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: DIODE ARRAY GP 600V 27A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io) (per Diode): 27A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 85 ns
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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APT30D60SG APT30D60SG Microchip Technology Microsemi_APT30D60BG_Fast_Soft_Recovery_Rectifier_Diode_I.pdf Description: DIODE STANDARD 600V 30A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
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APT30DQ100KG APT30DQ100KG Microchip Technology 123694-apt30dq100kg-datasheet Description: DIODE STANDARD 1000V 30A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 295 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
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APT30DQ120BCTG APT30DQ120BCTG Microchip Technology 123673-apt30dq120bctg-datasheet Description: DIODE ARRAY GP 1200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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APT30DQ120BG APT30DQ120BG Microchip Technology 123673-apt30dq120bctg-datasheet Description: DIODE STD 1200V 30A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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APT30DQ120KG APT30DQ120KG Microchip Technology Microsemi_APT30DQ120KG_Ultrafast_Soft_Recovery_Rectifier_Diode_F.pdf Description: DIODE STD 1200V 30A TO220 [K]
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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APT30DQ60BCTG APT30DQ60BCTG Microchip Technology APT30DQ60BCT%28G%29_D.pdf Description: DIODE ARRAY GP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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APT30DQ60KG APT30DQ60KG Microchip Technology Microsemi_APT30DQ60KG_Ultrafast_Soft_Recovery_Rectifier_Diode_G.pdf Description: DIODE STANDARD 600V 30A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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APT30DS60BG APT30DS60BG Microchip Technology 6888-apt30ds60bg-apt30ds60sg-datasheet Description: DIODE ARRAY GP 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 4 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Produkt ist nicht verfügbar
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APT30GN60BDQ2G APT30GN60BDQ2G Microchip Technology 6899-apt30gn60bdq2g-apt30gn60sdq2g-datasheet Description: IGBT TRENCH FS 600V 63A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/155ns
Switching Energy: 525µJ (on), 700µJ (off)
Test Condition: 400V, 30A, 4.3Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 203 W
Produkt ist nicht verfügbar
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APT30GN60BG APT30GN60BG Microchip Technology 6898-apt30gn60bg-apt30gn60sg-datasheet Description: IGBT TRENCH FS 600V 63A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/155ns
Switching Energy: 525µJ (on), 700µJ (off)
Test Condition: 400V, 30A, 4.3Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 203 W
Produkt ist nicht verfügbar
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APT30GT60BRDQ2G APT30GT60BRDQ2G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT NPT 600V 64A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 22 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 12ns/225ns
Switching Energy: 80µJ (on), 605µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 7.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 250 W
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APT30GT60BRG APT30GT60BRG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT NPT 600V 64A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 12ns/225ns
Switching Energy: 525µJ (on), 600µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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APT30M19JVFR APT30M19JVFR Microchip Technology 6206-apt30m19jvfr-datasheet Description: MOSFET N-CH 300V 130A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 975 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21600 pF @ 25 V
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APT30M19JVR APT30M19JVR Microchip Technology 6207-apt30m19jvr-datasheet Description: MOSFET N-CH 300V 130A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 975 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21600 pF @ 25 V
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APT30M40JVFR APT30M40JVFR Microchip Technology 6217-apt30m40jvfr-datasheet Description: MOSFET N-CH 300V 70A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 500mA, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
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APT30M40JVR APT30M40JVR Microchip Technology 6218-apt30m40jvr-datasheet Description: MOSFET N-CH 300V 70A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 500mA, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
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APT30M60J APT30M60J Microchip Technology 6927-apt30m60j-datasheet Description: MOSFET N-CH 600V 31A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 21A, 10V
Power Dissipation (Max): 355W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
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APT30M70BVFRG APT30M70BVFRG Microchip Technology 6930-apt30m70bvfrg-datasheet Description: MOSFET N-CH 300V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5870 pF @ 25 V
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APT30M70BVRG APT30M70BVRG Microchip Technology 6930-apt30m70bvfrg-datasheet Description: MOSFET N-CH 300V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5870 pF @ 25 V
Produkt ist nicht verfügbar
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APT30M85BVRG APT30M85BVRG Microchip Technology 6227-apt30m85bvrg-datasheet Description: MOSFET N-CH 300V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
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APT30S20BCTG APT30S20BCTG Microchip Technology APT30S20BCT(G)_C.pdf Description: DIODE ARRAY SCHOT 200V 45A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
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APT30S20BG APT30S20BG Microchip Technology APT30S20B_S(G)_D.pdf Description: DIODE SCHOTTKY 200V 45A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Current - Average Rectified (Io): 45A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
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APT31M100B2 APT31M100B2 Microchip Technology APT31M100B2_L_D.pdf Description: MOSFET N-CH 1000V 32A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 16A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
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APT32F120J APT32F120J Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 1200V 33A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 25A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18200 pF @ 25 V
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APT33GF120B2RDQ2G APT33GF120B2RDQ2G Microchip Technology 6240-apt33gf120b2rdq2g-apt33gf120lrdq2g-datasheet Description: IGBT NPT 1200V 64A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
IGBT Type: NPT
Td (on/off) @ 25°C: 14ns/185ns
Switching Energy: 1.315mJ (on), 1.515mJ (off)
Test Condition: 800V, 25A, 4.3Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 357 W
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APT33GF120BRG APT33GF120BRG Microchip Technology APT33GF120B2_LRDQ2%28G%29_A.pdf Description: IGBT NPT 1200V 52A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/210ns
Switching Energy: 2.8mJ (on), 2.8mJ (off)
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 52 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 104 A
Power - Max: 297 W
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APT33GF120LRDQ2G APT33GF120LRDQ2G Microchip Technology 6240-apt33gf120b2rdq2g-apt33gf120lrdq2g-datasheet Description: IGBT 1200V 64A 357W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
Supplier Device Package: TO-264 [L]
IGBT Type: NPT
Td (on/off) @ 25°C: 14ns/185ns
Switching Energy: 1.315mJ (on), 1.515mJ (off)
Test Condition: 800V, 25A, 4.3Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 357 W
Produkt ist nicht verfügbar
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APT34F100B2 APT34F100B2 Microchip Technology 6951-apt34f100b2-apt34f100l-datasheet Description: MOSFET N-CH 1000V 35A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 18A, 10V
Power Dissipation (Max): 1135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9835 pF @ 25 V
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APT34M120J APT34M120J Microchip Technology APT34M120J_C.pdf Description: MOSFET N-CH 1200V 35A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 25A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18200 pF @ 25 V
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APT34M60B APT34M60B Microchip Technology APT34M60B_S_C.pdf Description: MOSFET N-CH 600V 36A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 17A, 10V
Power Dissipation (Max): 624W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 25 V
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APT34N80B2C3G APT34N80B2C3G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 800V 34A T-MAX
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Produkt ist nicht verfügbar
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APT34N80LC3G APT34N80LC3G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 800V 34A TO264
Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT35GN120BG APT35GN120BG Microchip Technology 6968-apt35gn120bg-apt35gn120sg-datasheet Description: IGBT NPT FS 1200V 94A TO247
Td (on/off) @ 25°C: 24ns/300ns
IGBT Type: NPT, Trench Field Stop
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 379 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 94 A
Part Status: Active
Gate Charge: 220 nC
Test Condition: 800V, 35A, 2.2Ohm, 15V
Switching Energy: 2.315mJ (off)
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APT35GN120L2DQ2G APT35GN120L2DQ2G Microchip Technology 6245-apt35gn120l2dq2g-datasheet Description: IGBT 1200V 94A 379W TO264
Power - Max: 379 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 94 A
Part Status: Active
Gate Charge: 220 nC
Test Condition: 800V, 35A, 2.2Ohm, 15V
Switching Energy: 2.315mJ (off)
Td (on/off) @ 25°C: 24ns/300ns
IGBT Type: NPT, Trench Field Stop
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT35GP120B2DQ2G APT35GP120B2DQ2G Microchip Technology 6246-apt35gp120b2dq2g-datasheet Description: IGBT PT 1200V 96A
Power - Max: 543 W
Current - Collector Pulsed (Icm): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 96 A
Part Status: Active
Gate Charge: 150 nC
Test Condition: 600V, 35A, 4.3Ohm, 15V
Switching Energy: 750µJ (on), 680µJ (off)
Td (on/off) @ 25°C: 16ns/95ns
IGBT Type: PT
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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APT35GP120BG APT35GP120BG Microchip Technology 6969-apt35gp120bg-datasheet Description: IGBT 1200V 96A 543W TO247
Packaging: Tube
Current - Collector (Ic) (Max): 96 A
Part Status: Active
Gate Charge: 150 nC
Test Condition: 600V, 35A, 5Ohm, 15V
Switching Energy: 750µJ (on), 680µJ (off)
Td (on/off) @ 25°C: 16ns/94ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Power - Max: 543 W
Current - Collector Pulsed (Icm): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
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APT35GP120J APT35GP120J Microchip Technology 123954-apt35gp120j-datasheet Description: IGBT MOD 1200V 64A 284W ISOTOP
Current - Collector (Ic) (Max): 64 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Input Capacitance (Cies) @ Vce: 3.24 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 284 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
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APT35GP120JDQ2 APT35GP120JDQ2 Microchip Technology 123955-apt35gp120jdq2-datasheet Description: IGBT MOD 1200V 64A 284W ISOTOP
Input Capacitance (Cies) @ Vce: 3.24 nF @ 25 V
Current - Collector Cutoff (Max): 350 µA
Power - Max: 284 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 64 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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APT37F50B APT37F50B Microchip Technology 6980-apt37f50b-apt37f50s-datasheet Description: MOSFET N-CH 500V 37A TO247
Input Capacitance (Ciss) (Max) @ Vds: 5710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT37M100B2 APT37M100B2 Microchip Technology 6982-apt37m100b2-apt37m100l-datasheet Description: MOSFET N-CH 1000V 37A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 9835 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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APT37M100L APT37M100L Microchip Technology 6982-apt37m100b2-apt37m100l-datasheet Description: MOSFET N-CH 1000V 37A TO-264
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APT38F80L APT38F80L Microchip Technology APT38F80B2_L_C.pdf Description: MOSFET N-CH 800V 41A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 20A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 (L)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8070 pF @ 25 V
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APT30D100BCAG APT30D100BCA_G.pdf
APT30D100BCAG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 1000V 18A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io) (per Diode): 18A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT30D100BCTG 6175-apt30d100bctg-datasheet
APT30D100BCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 1000V 30A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT30D100BG 6173-apt30d100bg-apt30d100sg-datasheet
APT30D100BG
Hersteller: Microchip Technology
Description: DIODE STANDARD 1000V 30A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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APT30D100BHBG 6176-apt30d100bhbg-datasheet
APT30D100BHBG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 1000V 18A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io) (per Diode): 18A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT30D120BCTG 6861-apt30d120bctg-datasheet
APT30D120BCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 1200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
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APT30D120BG 6177-apt30d120bg-apt30d120sg-datasheet
APT30D120BG
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1.2KV 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
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APT30D120SG 6177-apt30d120bg-apt30d120sg-datasheet
APT30D120SG
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1.2KV 30A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
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APT30D20BCAG 6179-apt30d20bcag-datasheet
APT30D20BCAG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
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APT30D20BCTG 6180-apt30d20bctg-datasheet
APT30D20BCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Produkt ist nicht verfügbar
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APT30D20BG 6178-apt30d20bg-apt30d20sg-datasheet
APT30D20BG
Hersteller: Microchip Technology
Description: DIODE STD 200V 30A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
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APT30D30BG 6862-apt30d30bg-datasheet
APT30D30BG
Hersteller: Microchip Technology
Description: DIODE GP 300V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 300 V
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APT30D40BCTG 123917-apt30d40bctg-datasheet
APT30D40BCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 400V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Produkt ist nicht verfügbar
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APT30D40BG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT30D40BG
Hersteller: Microchip Technology
Description: DIODE GP 400V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
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APT30D40SG 6181-apt30d40b-s-g-f-pdf
APT30D40SG
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 30A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Produkt ist nicht verfügbar
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APT30D60BCAG 6184-apt30d60bcag-datasheet
APT30D60BCAG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 600V 27A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 27A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
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APT30D60BCTG 6185-apt30d60bctg-datasheet
APT30D60BCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
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APT30D60BG Microsemi_APT30D60BG_Fast_Soft_Recovery_Rectifier_Diode_I.pdf
APT30D60BG
Hersteller: Microchip Technology
Description: DIODE STD 600V 30A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
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APT30D60BHBG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT30D60BHBG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 600V 27A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io) (per Diode): 27A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 85 ns
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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APT30D60SG Microsemi_APT30D60BG_Fast_Soft_Recovery_Rectifier_Diode_I.pdf
APT30D60SG
Hersteller: Microchip Technology
Description: DIODE STANDARD 600V 30A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
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APT30DQ100KG 123694-apt30dq100kg-datasheet
APT30DQ100KG
Hersteller: Microchip Technology
Description: DIODE STANDARD 1000V 30A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 295 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
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APT30DQ120BCTG 123673-apt30dq120bctg-datasheet
APT30DQ120BCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 1200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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APT30DQ120BG 123673-apt30dq120bctg-datasheet
APT30DQ120BG
Hersteller: Microchip Technology
Description: DIODE STD 1200V 30A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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APT30DQ120KG Microsemi_APT30DQ120KG_Ultrafast_Soft_Recovery_Rectifier_Diode_F.pdf
APT30DQ120KG
Hersteller: Microchip Technology
Description: DIODE STD 1200V 30A TO220 [K]
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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APT30DQ60BCTG APT30DQ60BCT%28G%29_D.pdf
APT30DQ60BCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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APT30DQ60KG Microsemi_APT30DQ60KG_Ultrafast_Soft_Recovery_Rectifier_Diode_G.pdf
APT30DQ60KG
Hersteller: Microchip Technology
Description: DIODE STANDARD 600V 30A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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APT30DS60BG 6888-apt30ds60bg-apt30ds60sg-datasheet
APT30DS60BG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 4 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Produkt ist nicht verfügbar
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APT30GN60BDQ2G 6899-apt30gn60bdq2g-apt30gn60sdq2g-datasheet
APT30GN60BDQ2G
Hersteller: Microchip Technology
Description: IGBT TRENCH FS 600V 63A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/155ns
Switching Energy: 525µJ (on), 700µJ (off)
Test Condition: 400V, 30A, 4.3Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 203 W
Produkt ist nicht verfügbar
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APT30GN60BG 6898-apt30gn60bg-apt30gn60sg-datasheet
APT30GN60BG
Hersteller: Microchip Technology
Description: IGBT TRENCH FS 600V 63A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/155ns
Switching Energy: 525µJ (on), 700µJ (off)
Test Condition: 400V, 30A, 4.3Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 203 W
Produkt ist nicht verfügbar
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APT30GT60BRDQ2G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT30GT60BRDQ2G
Hersteller: Microchip Technology
Description: IGBT NPT 600V 64A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 22 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 12ns/225ns
Switching Energy: 80µJ (on), 605µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 7.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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APT30GT60BRG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT30GT60BRG
Hersteller: Microchip Technology
Description: IGBT NPT 600V 64A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 12ns/225ns
Switching Energy: 525µJ (on), 600µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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APT30M19JVFR 6206-apt30m19jvfr-datasheet
APT30M19JVFR
Hersteller: Microchip Technology
Description: MOSFET N-CH 300V 130A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 975 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21600 pF @ 25 V
Produkt ist nicht verfügbar
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APT30M19JVR 6207-apt30m19jvr-datasheet
APT30M19JVR
Hersteller: Microchip Technology
Description: MOSFET N-CH 300V 130A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 975 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21600 pF @ 25 V
Produkt ist nicht verfügbar
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APT30M40JVFR 6217-apt30m40jvfr-datasheet
APT30M40JVFR
Hersteller: Microchip Technology
Description: MOSFET N-CH 300V 70A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 500mA, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
Produkt ist nicht verfügbar
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APT30M40JVR 6218-apt30m40jvr-datasheet
APT30M40JVR
Hersteller: Microchip Technology
Description: MOSFET N-CH 300V 70A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 500mA, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
Produkt ist nicht verfügbar
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APT30M60J 6927-apt30m60j-datasheet
APT30M60J
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 31A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 21A, 10V
Power Dissipation (Max): 355W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
Produkt ist nicht verfügbar
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APT30M70BVFRG 6930-apt30m70bvfrg-datasheet
APT30M70BVFRG
Hersteller: Microchip Technology
Description: MOSFET N-CH 300V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5870 pF @ 25 V
Produkt ist nicht verfügbar
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APT30M70BVRG 6930-apt30m70bvfrg-datasheet
APT30M70BVRG
Hersteller: Microchip Technology
Description: MOSFET N-CH 300V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5870 pF @ 25 V
Produkt ist nicht verfügbar
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APT30M85BVRG 6227-apt30m85bvrg-datasheet
APT30M85BVRG
Hersteller: Microchip Technology
Description: MOSFET N-CH 300V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
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APT30S20BCTG APT30S20BCT(G)_C.pdf
APT30S20BCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY SCHOT 200V 45A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
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APT30S20BG APT30S20B_S(G)_D.pdf
APT30S20BG
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 200V 45A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Current - Average Rectified (Io): 45A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
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5+5.11 EUR
100+4.11 EUR
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APT31M100B2 APT31M100B2_L_D.pdf
APT31M100B2
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 32A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 16A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
Produkt ist nicht verfügbar
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APT32F120J High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT32F120J
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 33A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 25A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18200 pF @ 25 V
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APT33GF120B2RDQ2G 6240-apt33gf120b2rdq2g-apt33gf120lrdq2g-datasheet
APT33GF120B2RDQ2G
Hersteller: Microchip Technology
Description: IGBT NPT 1200V 64A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
IGBT Type: NPT
Td (on/off) @ 25°C: 14ns/185ns
Switching Energy: 1.315mJ (on), 1.515mJ (off)
Test Condition: 800V, 25A, 4.3Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 357 W
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APT33GF120BRG APT33GF120B2_LRDQ2%28G%29_A.pdf
APT33GF120BRG
Hersteller: Microchip Technology
Description: IGBT NPT 1200V 52A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/210ns
Switching Energy: 2.8mJ (on), 2.8mJ (off)
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 52 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 104 A
Power - Max: 297 W
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APT33GF120LRDQ2G 6240-apt33gf120b2rdq2g-apt33gf120lrdq2g-datasheet
APT33GF120LRDQ2G
Hersteller: Microchip Technology
Description: IGBT 1200V 64A 357W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
Supplier Device Package: TO-264 [L]
IGBT Type: NPT
Td (on/off) @ 25°C: 14ns/185ns
Switching Energy: 1.315mJ (on), 1.515mJ (off)
Test Condition: 800V, 25A, 4.3Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 357 W
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APT34F100B2 6951-apt34f100b2-apt34f100l-datasheet
APT34F100B2
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 35A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 18A, 10V
Power Dissipation (Max): 1135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9835 pF @ 25 V
Produkt ist nicht verfügbar
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APT34M120J APT34M120J_C.pdf
APT34M120J
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 35A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 25A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18200 pF @ 25 V
Produkt ist nicht verfügbar
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APT34M60B APT34M60B_S_C.pdf
APT34M60B
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 36A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 17A, 10V
Power Dissipation (Max): 624W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 25 V
Produkt ist nicht verfügbar
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APT34N80B2C3G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT34N80B2C3G
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 34A T-MAX
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
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APT34N80LC3G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT34N80LC3G
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 34A TO264
Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
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APT35GN120BG 6968-apt35gn120bg-apt35gn120sg-datasheet
APT35GN120BG
Hersteller: Microchip Technology
Description: IGBT NPT FS 1200V 94A TO247
Td (on/off) @ 25°C: 24ns/300ns
IGBT Type: NPT, Trench Field Stop
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 379 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 94 A
Part Status: Active
Gate Charge: 220 nC
Test Condition: 800V, 35A, 2.2Ohm, 15V
Switching Energy: 2.315mJ (off)
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APT35GN120L2DQ2G 6245-apt35gn120l2dq2g-datasheet
APT35GN120L2DQ2G
Hersteller: Microchip Technology
Description: IGBT 1200V 94A 379W TO264
Power - Max: 379 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 94 A
Part Status: Active
Gate Charge: 220 nC
Test Condition: 800V, 35A, 2.2Ohm, 15V
Switching Energy: 2.315mJ (off)
Td (on/off) @ 25°C: 24ns/300ns
IGBT Type: NPT, Trench Field Stop
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT35GP120B2DQ2G 6246-apt35gp120b2dq2g-datasheet
APT35GP120B2DQ2G
Hersteller: Microchip Technology
Description: IGBT PT 1200V 96A
Power - Max: 543 W
Current - Collector Pulsed (Icm): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 96 A
Part Status: Active
Gate Charge: 150 nC
Test Condition: 600V, 35A, 4.3Ohm, 15V
Switching Energy: 750µJ (on), 680µJ (off)
Td (on/off) @ 25°C: 16ns/95ns
IGBT Type: PT
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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APT35GP120BG 6969-apt35gp120bg-datasheet
APT35GP120BG
Hersteller: Microchip Technology
Description: IGBT 1200V 96A 543W TO247
Packaging: Tube
Current - Collector (Ic) (Max): 96 A
Part Status: Active
Gate Charge: 150 nC
Test Condition: 600V, 35A, 5Ohm, 15V
Switching Energy: 750µJ (on), 680µJ (off)
Td (on/off) @ 25°C: 16ns/94ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Power - Max: 543 W
Current - Collector Pulsed (Icm): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
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APT35GP120J 123954-apt35gp120j-datasheet
APT35GP120J
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 64A 284W ISOTOP
Current - Collector (Ic) (Max): 64 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Input Capacitance (Cies) @ Vce: 3.24 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 284 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
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APT35GP120JDQ2 123955-apt35gp120jdq2-datasheet
APT35GP120JDQ2
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 64A 284W ISOTOP
Input Capacitance (Cies) @ Vce: 3.24 nF @ 25 V
Current - Collector Cutoff (Max): 350 µA
Power - Max: 284 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 64 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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APT37F50B 6980-apt37f50b-apt37f50s-datasheet
APT37F50B
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 37A TO247
Input Capacitance (Ciss) (Max) @ Vds: 5710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT37M100B2 6982-apt37m100b2-apt37m100l-datasheet
APT37M100B2
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 37A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 9835 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Produkt ist nicht verfügbar
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APT37M100L 6982-apt37m100b2-apt37m100l-datasheet
APT37M100L
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 37A TO-264
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APT38F80L APT38F80B2_L_C.pdf
APT38F80L
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 41A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 20A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 (L)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8070 pF @ 25 V
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