Produkte > DMP
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| DMP22D5UFO-7B | DIODES INC. | Description: DIODES INC. - DMP22D5UFO-7B - Leistungs-MOSFET, p-Kanal, 20 V, 510 mA, 0.95 ohm, X2-DFN0604, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 510mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 770mW Bauform - Transistor: X2-DFN0604 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.95ohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 8140 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP22D5UFZ-7B | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V X2-DFN0606- Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0606-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 16 V | auf Bestellung 240000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP22D5UFZ-7B | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V X2-DFN0606-3 T and R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 9 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP22D5UFZ-7B | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V X2-DFN0606- Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0606-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 16 V | auf Bestellung 249763 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP22D6UFB4Q-7B | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V X2-DFN1006-3 T&R 10K | auf Bestellung 9966 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP22D6UT-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.43A 3-Pin SOT-523 T/R | auf Bestellung 75000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP22D6UT-7 | DIODES INC. | Description: DIODES INC. - DMP22D6UT-7 - Leistungs-MOSFET, p-Kanal, 20 V, 430 mA, 0.7 ohm, SOT-523, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 430mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 150mW Bauform - Transistor: SOT-523 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.7ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1140 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP22D6UT-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.43A 3-Pin SOT-523 T/R | auf Bestellung 1507 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP22D6UT-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 430MA SOT523 | auf Bestellung 429000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP22D6UT-7 | DIODES | SOT523 | auf Bestellung 2890 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP22D6UT-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.43A 3-Pin SOT-523 T/R | auf Bestellung 75000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP22D6UT-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.43A 3-Pin SOT-523 T/R | auf Bestellung 1507 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP22D6UT-7 | Diodes Incorporated | MOSFETs SINGLE P-CHANNEL | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP22D6UT-7 | Diodes Zetex | Trans MOSFET P-CH 20V 0.43A 3-Pin SOT-523 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP22D6UT-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 430MA SOT523 | auf Bestellung 437254 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP22M1UPSW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V PowerDI5060-8 T&R 2.5K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP22M1UPSW-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V POWERDI5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V Power Dissipation (Max): 104W Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type Q) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP22M2UPS-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 60A PWRDI5060-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 476 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V | auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP22M2UPS-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -33.5A; Idm: -100A; 2.3W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape On-state resistance: 5mΩ Mounting: SMD Pulsed drain current: -100A Power dissipation: 2.3W Gate charge: 476nC Polarisation: unipolar Drain current: -33.5A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP22M2UPS-13 | Diodes Zetex | Trans MOSFET P-CH 20V 42A 8-Pin PowerDI EP T/R | auf Bestellung 77500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP22M2UPS-13 | Diodes Zetex | Trans MOSFET P-CH 20V 42A 8-Pin PowerDI EP T/R | auf Bestellung 50000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP22M2UPS-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 60A PWRDI5060-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 476 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V | auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP22M2UPS-13 | Diodes Zetex | Trans MOSFET P-CH 20V 42A 8-Pin PowerDI EP T/R | auf Bestellung 50000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP22M2UPS-13 | Diodes Incorporated | MOSFETs 20V P-Ch Enh FET 12Vgss PPAP | auf Bestellung 2870 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2305U | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2305U-7 | Diodes Incorporated | MOSFETs P-CHANNEL ENHANCEMENT MODE | auf Bestellung 2646 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2305U-7 Produktcode: 164480
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Lieblingsprodukt
| Transistoren > Transistoren P-Kanal-Feld | Produkt ist nicht verfügbar
| Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| DMP2305U-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 727 pF @ 20 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2305U-7 | DIODES INC. | Description: DIODES INC. - DMP2305U-7 - Leistungs-MOSFET, p-Kanal, 20 V, 4.2 A, 0.06 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 500mV euEccn: NLR Verlustleistung: 1.4W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.06ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 25515 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2305U-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.2A; 1.4W; SOT23 Polarisation: unipolar Drain current: -4.2A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: 7 inch reel; tape Case: SOT23 On-state resistance: 60mΩ Mounting: SMD Power dissipation: 1.4W | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2305U-7 | DIODES INC. | Description: DIODES INC. - DMP2305U-7 - Leistungs-MOSFET, p-Kanal, 20 V, 4.2 A, 0.06 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 500mV euEccn: NLR Verlustleistung: 1.4W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.06ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 22665 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2305U-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 727 pF @ 20 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2305U-7 | Diodes | Транзистор: P-MOSFET, полевой, -20В, -4,2А, 1,4Вт, SOT23 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2305U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.2A 3-Pin SOT-23 T/R | auf Bestellung 118 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2305U-7-CN | CHIPNOBO | Transistor P-Channel MOSFET; 20V; 12V; 50mOhm; 6A; 1,6W; -55°C ~ 150°C; Equivalent: DMP2305U-7 Diodes; DMP2305U-7-CN CHIPNOBO TDMP2305u CNB Anzahl je Verpackung: 250 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP2305UQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 727 pF @ 20 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2305UQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.4W; SOT23 Polarisation: unipolar Drain current: -3.4A Kind of channel: enhancement Drain-source voltage: -20V Application: automotive industry Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: 7 inch reel; tape Case: SOT23 On-state resistance: 113mΩ Mounting: SMD Pulsed drain current: -10A Power dissipation: 1.4W Gate charge: 7.6nC | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2305UQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Input Capacitance (Ciss) (Max) @ Vds: 727 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 1.4W Qualification: AEC-Q101 Grade: Automotive Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2305UQ-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.2A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2305UQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V SOT23 T&R 3K | auf Bestellung 34 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2305UVT-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.23A 6-Pin TSOT-26 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2305UVT-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.2A TSOT26 Input Capacitance (Ciss) (Max) @ Vds: 727 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: TSOT-26 Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 1.4W Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) | auf Bestellung 19645 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2305UVT-7 | Diodes Incorporated | MOSFETs 20V P-CH MOSFET | auf Bestellung 2977 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2305UVT-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.23A 6-Pin TSOT-26 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2305UVT-7 | DIODES INC. | Description: DIODES INC. - DMP2305UVT-7 - Leistungs-MOSFET, p-Kanal, 20 V, 4.23 A, 0.045 ohm, TSOT-26, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4.23A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 900mV Verlustleistung: 1.25W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TSOT-26 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 4.5V Drain-Source-Durchgangswiderstand: 0.045ohm | auf Bestellung 3970 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2305UVT-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.2A TSOT26 Input Capacitance (Ciss) (Max) @ Vds: 727 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: TSOT-26 Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 1.4W Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2305UVT-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.23A 6-Pin TSOT-26 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2305UVT-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.98A; Idm: -16A; 1.64W Polarisation: unipolar Drain current: -2.98A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: 7 inch reel; tape Case: TSOT26 On-state resistance: 113mΩ Mounting: SMD Pulsed drain current: -16A Power dissipation: 1.64W Gate charge: 7.6nC | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2305UVT-7 | DIODES INC. | Description: DIODES INC. - DMP2305UVT-7 - Leistungs-MOSFET, p-Kanal, 20 V, 4.23 A, 0.045 ohm, TSOT-26, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4.23A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Gate-Source-Schwellenspannung, max.: 900mV Verlustleistung: 1.25W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TSOT-26 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 4.5V Drain-Source-Durchgangswiderstand: 0.045ohm | auf Bestellung 3970 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2330E | Hoffman Enclosures, Inc. | Description: PANEL FITS 230X300MM | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2540UCB9-7 | Diodes Incorporated | Description: MOSFET P-CH 25V 4A U-WLB1515-9 Packaging: Tape & Reel (TR) Package / Case: 9-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 2A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-WLB1515-9 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 10 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2540UCB9-7 | Diodes Incorporated | MOSFET P-Ch Enh Mode FET 40mOhm -25V -5.2A | auf Bestellung 2211 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2541UCB9-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V~30V U-WLB1515-9 T&R 3K | auf Bestellung 1399 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2541UCB9-7 | Diodes Incorporated | Description: MOSFET P-CH 25V 3.9A U-WLB1515-9 Mounting Type: Surface Mount Package / Case: 9-UFBGA, WLBGA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): -6V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: U-WLB1515-9 Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 940mW (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 155°C (TJ) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2541UCP9-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V X2-DSN1515 Input Capacitance (Ciss) (Max) @ Vds: 566 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): -6V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: X2-DSN1515-9 (Type B) Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-XFBGA, DSBGA Packaging: Bulk | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP25H18DLFDE-13 | Diodes Incorporated | Description: MOSFET P-CH 250V 260MA 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: U-DFN2020-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Vgs (Max): ±40V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 25 V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP25H18DLFDE-13 | Diodes Incorporated | MOSFET 250V P-Ch Enh FET 40Vgss 81pF 2.8nC | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP25H18DLFDE-7 | DIODES INC. | Description: DIODES INC. - DMP25H18DLFDE-7 - Leistungs-MOSFET, p-Kanal, 250 V, 260 mA, 10 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 250V rohsCompliant: YES Dauer-Drainstrom Id: 260mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Gate-Source-Schwellenspannung, max.: 1.7V Verlustleistung: 1.4W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 10ohm | auf Bestellung 803 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP25H18DLFDE-7 | Diodes Incorporated | Description: MOSFET P-CH 250V 260MA 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: U-DFN2020-6 (Type E) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Vgs (Max): ±40V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 25 V | auf Bestellung 150271 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP25H18DLFDE-7 | Diodes Incorporated | MOSFETs 250V P-Ch Enh FET 40Vgss 81pF 2.8nC | auf Bestellung 2046 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP25H18DLFDE-7 | DIODES INC. | Description: DIODES INC. - DMP25H18DLFDE-7 - Leistungs-MOSFET, p-Kanal, 250 V, 260 mA, 10 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 250V rohsCompliant: YES Dauer-Drainstrom Id: 260mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Gate-Source-Schwellenspannung, max.: 1.7V Verlustleistung: 1.4W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 10ohm | auf Bestellung 803 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP25H18DLFDE-7 | Diodes Incorporated | Description: MOSFET P-CH 250V 260MA 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: U-DFN2020-6 (Type E) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Vgs (Max): ±40V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 25 V | auf Bestellung 147000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP25H18DLFDE-7 | Diodes Zetex | Trans MOSFET P-CH 250V 0.26A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP26M1UFG | Diodes | MOSFET BVDSS: 8V~24V POWERDI3333 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP26M1UFG-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V PowerDI3333-8 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP26M1UFG-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -110A; 3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -56A Pulsed drain current: -110A Power dissipation: 3W Case: PowerDI3333-8 Gate-source voltage: ±10V On-state resistance: 17mΩ Mounting: SMD Gate charge: 164nC Kind of package: 13 inch reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP26M1UFG-13 | Diodes Zetex | Trans MOSFET P-CH 20V 71A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP26M1UFG-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 71A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 4.5V Power Dissipation (Max): 1.67W (Ta), 3W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5392 pF @ 10 V | auf Bestellung 61860 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP26M1UFG-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 71A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 4.5V Power Dissipation (Max): 1.67W (Ta), 3W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5392 pF @ 10 V | auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP26M1UPS-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar Mounting: SMD Polarisation: unipolar Type of transistor: P-MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP26M1UPS-13 | DIODES INC. | Description: DIODES INC. - DMP26M1UPS-13 - Leistungs-MOSFET, p-Kanal, 20 V, 90 A, 5000 µohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 90A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Verlustleistung Pd: 2.76W Gate-Source-Schwellenspannung, max.: 1V Verlustleistung: 2.76W SVHC: Lead (25-Jun-2025) Bauform - Transistor: PowerDI 5060 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal usEccn: EAR99 Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.005ohm Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 4.5V Drain-Source-Durchgangswiderstand: 5000µohm | auf Bestellung 1940 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP26M1UPS-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V PowerDI5060-8 T&R 2.5K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP26M1UPSW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V PowerDI5060-8/SWP T&R 2.5K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP26M1UPSWQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V PowerDI5060-8/SWP T&R 2.5K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP26M7UFG-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 18A PWRDI3333-8 | auf Bestellung 75000 Stücke: Lieferzeit 10-14 Tag (e) | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP26M7UFG-13 | Diodes Incorporated | MOSFET 20V P-Ch Enh FET 12Vgss PPAP | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP26M7UFG-7 | Diodes Incorporated | MOSFETs 20V P-Ch Enh FET 12Vgss PPAP | auf Bestellung 875 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP26M7UFG-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 18A PWRDI3333 Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.3W (Ta) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 4.5V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) | auf Bestellung 4288 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP26M7UFG-7 | DIODES INC. | Description: DIODES INC. - DMP26M7UFG-7 - Leistungs-MOSFET, p-Kanal, 20 V, 40 A, 4200 µohm, PowerDI 3333, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Gate-Source-Schwellenspannung, max.: 1V Verlustleistung: 41W SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: PowerDI 3333 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 4.5V Drain-Source-Durchgangswiderstand: 4200µohm | auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP26M7UFG-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 18A PWRDI3333 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.3W (Ta) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 4.5V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP26M7UFG-7 | DIODES INC. | Description: DIODES INC. - DMP26M7UFG-7 - Leistungs-MOSFET, p-Kanal, 20 V, 40 A, 4200 µohm, PowerDI 3333, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 1V Verlustleistung: 41W SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: PowerDI 3333 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 4.5V Drain-Source-Durchgangswiderstand: 4200µohm | auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP27M1UPSW-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; -20V; -84A; PowerDI5060-8 Case: PowerDI5060-8 Mounting: SMD Drain current: -84A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP27M1UPSW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V PowerDI5060-8/SWP T&R 2.5K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP27M1UPSWQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V PowerDI5060-8/SWP T&R 2.5K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP282820A-121MHF | ITG Electronics, Inc. | Description: FIXED IND 125UH 13.5A 16.7 MOHM Packaging: Bulk Tolerance: ±20% Package / Case: Radial, Horizontal, 4 Leads Size / Dimension: 1.083" L x 0.787" W (27.50mm x 20.00mm) Mounting Type: Through Hole Shielding: Unshielded Type: Wirewound Operating Temperature: -55°C ~ 150°C DC Resistance (DCR): 16.7mOhm Current - Saturation (Isat): 6.4A Material - Core: Alloy Powder Inductance Frequency - Test: 100 kHz Supplier Device Package: Radial Height - Seated (Max): 1.102" (28.00mm) Inductance: 125 µH Current Rating (Amps): 13.5 A | auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP282820A-161MHF | ITG Electronics, Inc. | Description: FIXED IND 165UH 11.7A 22.3 MOHM Packaging: Bulk Tolerance: ±20% Package / Case: Radial, Horizontal, 4 Leads Size / Dimension: 1.083" L x 0.787" W (27.50mm x 20.00mm) Mounting Type: Through Hole Shielding: Unshielded Type: Wirewound Operating Temperature: -55°C ~ 150°C DC Resistance (DCR): 22.3mOhm Current - Saturation (Isat): 5.6A Material - Core: Alloy Powder Inductance Frequency - Test: 100 kHz Supplier Device Package: Radial Height - Seated (Max): 1.102" (28.00mm) Inductance: 165 µH Current Rating (Amps): 11.7 A | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP282820A-221MHF | ITG Electronics, Inc. | Description: FIXED IND 220UH 10A 31 MOHM TH Packaging: Bulk Tolerance: ±20% Package / Case: Radial, Horizontal, 4 Leads Size / Dimension: 1.083" L x 0.787" W (27.50mm x 20.00mm) Mounting Type: Through Hole Shielding: Unshielded Type: Wirewound Operating Temperature: -55°C ~ 150°C DC Resistance (DCR): 31mOhm Current - Saturation (Isat): 4.8A Material - Core: Alloy Powder Inductance Frequency - Test: 100 kHz Supplier Device Package: Radial Height - Seated (Max): 1.102" (28.00mm) Inductance: 220 µH Current Rating (Amps): 10 A | auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP282820A-330MHF | ITG Electronics, Inc. | Description: FIXED IND 33UH 26A 4.5 MOHM TH Tolerance: ±20% Packaging: Bulk Package / Case: Radial, Horizontal, 4 Leads Size / Dimension: 1.083" L x 0.787" W (27.50mm x 20.00mm) Mounting Type: Through Hole Shielding: Unshielded Type: Wirewound Operating Temperature: -55°C ~ 150°C DC Resistance (DCR): 4.5mOhm Current - Saturation (Isat): 12.4A Material - Core: Alloy Powder Inductance Frequency - Test: 100 kHz Supplier Device Package: Radial Height - Seated (Max): 1.102" (28.00mm) Inductance: 33 µH Current Rating (Amps): 26 A | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP282820A-331MHF | ITG Electronics, Inc. | Description: FIXED IND 330UH 7.7A 51.6 MOHM Packaging: Bulk Tolerance: ±20% Package / Case: Radial, Horizontal, 4 Leads Size / Dimension: 1.083" L x 0.787" W (27.50mm x 20.00mm) Mounting Type: Through Hole Shielding: Unshielded Type: Wirewound Operating Temperature: -55°C ~ 150°C DC Resistance (DCR): 51.6mOhm Current - Saturation (Isat): 3.9A Material - Core: Alloy Powder Inductance Frequency - Test: 100 kHz Supplier Device Package: Radial Height - Seated (Max): 1.102" (28.00mm) Inductance: 330 µH Current Rating (Amps): 7.7 A | auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP282820A-500MHF | ITG Electronics, Inc. | Description: FIXED IND 50UH 21A 6.8 MOHM TH Packaging: Bulk Tolerance: ±20% Package / Case: Radial, Horizontal, 4 Leads Size / Dimension: 1.083" L x 0.787" W (27.50mm x 20.00mm) Mounting Type: Through Hole Shielding: Unshielded Type: Wirewound Operating Temperature: -55°C ~ 150°C DC Resistance (DCR): 6.8mOhm Current - Saturation (Isat): 10.2A Material - Core: Alloy Powder Inductance Frequency - Test: 100 kHz Supplier Device Package: Radial Height - Seated (Max): 1.102" (28.00mm) Inductance: 50 µH Current Rating (Amps): 21 A | auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP282820A-900MHF | ITG Electronics, Inc. | Description: FIXED IND 90UH 15.5A 12.5 MOHM Packaging: Bulk Tolerance: ±20% Package / Case: Radial, Horizontal, 4 Leads Size / Dimension: 1.083" L x 0.787" W (27.50mm x 20.00mm) Mounting Type: Through Hole Shielding: Unshielded Type: Wirewound Operating Temperature: -55°C ~ 150°C DC Resistance (DCR): 12.5mOhm Current - Saturation (Isat): 7.6A Material - Core: Alloy Powder Inductance Frequency - Test: 100 kHz Supplier Device Package: Radial Height - Seated (Max): 1.102" (28.00mm) Inductance: 90 µH Current Rating (Amps): 15.5 A | auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP282829A-111MHF | ITG Electronics, Inc. | Description: FIXED IND 115UH 16.5A 11.9 MOHM Tolerance: ±20% Packaging: Bulk Package / Case: Radial, Horizontal, 4 Leads Size / Dimension: 1.083" L x 1.122" W (27.50mm x 28.50mm) Mounting Type: Through Hole Shielding: Unshielded Type: Wirewound Operating Temperature: -55°C ~ 150°C DC Resistance (DCR): 11.9mOhm Current - Saturation (Isat): 7.6A Material - Core: Alloy Powder Inductance Frequency - Test: 100 kHz Supplier Device Package: Radial Height - Seated (Max): 1.102" (28.00mm) Inductance: 115 µH Current Rating (Amps): 16.5 A | auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP282829A-131MHF | ITG Electronics, Inc. | Description: FIXED IND 135UH 15A 14 MOHM TH Packaging: Bulk Tolerance: ±20% Package / Case: Radial, Horizontal, 4 Leads Size / Dimension: 1.083" L x 1.122" W (27.50mm x 28.50mm) Mounting Type: Through Hole Shielding: Unshielded Type: Wirewound Operating Temperature: -55°C ~ 150°C DC Resistance (DCR): 14mOhm Current - Saturation (Isat): 7.1A Material - Core: Alloy Powder Inductance Frequency - Test: 100 kHz Supplier Device Package: Radial Height - Seated (Max): 1.102" (28.00mm) Inductance: 135 µH Current Rating (Amps): 15 A | auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP282829A-211MHF | ITG Electronics, Inc. | Description: FIXED IND 210UH 12A 21.6 MOHM TH Packaging: Bulk Tolerance: ±20% Package / Case: Radial, Horizontal, 4 Leads Size / Dimension: 1.083" L x 1.122" W (27.50mm x 28.50mm) Mounting Type: Through Hole Shielding: Unshielded Type: Wirewound Operating Temperature: -55°C ~ 150°C DC Resistance (DCR): 21.6mOhm Current - Saturation (Isat): 5.7A Material - Core: Alloy Powder Inductance Frequency - Test: 100 kHz Supplier Device Package: Radial Height - Seated (Max): 1.102" (28.00mm) Inductance: 210 µH Current Rating (Amps): 12 A | auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP282829A-341MHF | ITG Electronics, Inc. | Description: FIXED IND 0.34MH 10A 36.6 MOHM Packaging: Bulk Tolerance: ±20% Package / Case: Radial, Horizontal, 4 Leads Size / Dimension: 1.083" L x 1.122" W (27.50mm x 28.50mm) Mounting Type: Through Hole Shielding: Unshielded Type: Wirewound Operating Temperature: -55°C ~ 150°C DC Resistance (DCR): 36.6mOhm Current - Saturation (Isat): 4.4A Material - Core: Alloy Powder Inductance Frequency - Test: 100 kHz Supplier Device Package: Radial Height - Seated (Max): 1.102" (28.00mm) Inductance: 0.34 mH Current Rating (Amps): 10 A | auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP282829A-701MHF | ITG Electronics, Inc. | Description: FIXED IND 700UH 6A 86 MOHM TH Packaging: Bulk Tolerance: ±20% Package / Case: Radial, Horizontal, 4 Leads Size / Dimension: 1.083" L x 1.122" W (27.50mm x 28.50mm) Mounting Type: Through Hole Shielding: Unshielded Type: Wirewound Operating Temperature: -55°C ~ 150°C DC Resistance (DCR): 86mOhm Current - Saturation (Isat): 3.1A Material - Core: Alloy Powder Inductance Frequency - Test: 100 kHz Supplier Device Package: Radial Height - Seated (Max): 1.102" (28.00mm) Inductance: 700 µH Current Rating (Amps): 6 A | auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2900UDW-13 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 0.63A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 370mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 49pF @ 16V Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2900UDW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V SOT363 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2900UDW-7 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 0.63A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 370mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 49pF @ 16V Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 | auf Bestellung 220929 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2900UDW-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V SOT363 T&R 3K | auf Bestellung 11080 Stücke: Lieferzeit 10-14 Tag (e) |
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