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TSM007IDTSTMicroelectronicsDescription: IC REG CTRLR 8SOIC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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TSM007INSTMicroelectronicsDescription: IC REG CTRLR 8DIP
Control Features: Frequency Control, Soft Start
Synchronous Rectifier: No
Output Phases: 1
Supplier Device Package: 8-DIP
Voltage - Supply (Vcc/Vdd): 12V ~ 25V
Clock Sync: No
Duty Cycle (Max): 60%
Number of Outputs: 1
Frequency - Switching: 100kHz
Output Configuration: Positive, Isolation Capable
Operating Temperature: 0°C ~ 95°C (TA)
Mounting Type: Through Hole
Output Type: Transistor Driver
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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TSM007INSTM
auf Bestellung 18000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TSM007NM03LCR RGGTaiwan Semiconductor CorporationDescription: 30V, 120A, SINGLE, N-CHANNEL LOW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 20A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13124 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.81 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TSM007NM03LCR RGGTaiwan SemiconductorMOSFETs 30V, 120A, Single, N-Channel Low Voltage MOSFETs
auf Bestellung 4478 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.62 EUR
10+3.64 EUR
100+2.56 EUR
500+2.07 EUR
1000+2 EUR
5000+1.86 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TSM007NM03LCR RGGTaiwan Semiconductor CorporationDescription: 30V, 120A, SINGLE, N-CHANNEL LOW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 20A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13124 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.78 EUR
10+3.76 EUR
100+2.62 EUR
500+2.21 EUR
Mindestbestellmenge: 4 Stücke
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TSM01053QFP80
auf Bestellung 89 Stücke:
Lieferzeit 21-28 Tag (e)
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TSM011NM03LCR RGGTaiwan SemiconductorMOSFETs 30V, 120A, Single, N-Channel Low Voltage MOSFETs
auf Bestellung 4982 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.8 EUR
10+2.4 EUR
100+1.63 EUR
500+1.3 EUR
1000+1.18 EUR
5000+1.06 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TSM011NM03LCR RGGTaiwan Semiconductor CorporationDescription: 30V, 120A, SINGLE, N-CHANNEL LOW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4378 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 4490 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.86 EUR
10+2.46 EUR
100+1.65 EUR
500+1.32 EUR
1000+1.2 EUR
2000+1.15 EUR
Mindestbestellmenge: 6 Stücke
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TSM011NM03LCR RGGTaiwan Semiconductor CorporationDescription: 30V, 120A, SINGLE, N-CHANNEL LOW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4378 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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TSM013NM04LTL RAGTaiwan Semiconductor CorporationDescription: 40V, 300A, SINGLE, N-CHANNEL LOW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 20A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TOLLA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6458 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 1989 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.38 EUR
10+3.47 EUR
100+2.39 EUR
500+1.93 EUR
1000+1.82 EUR
Mindestbestellmenge: 4 Stücke
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TSM013NM04LTL RAGTaiwan SemiconductorMOSFETs 40V, 300A, Single, N-Channel Low Voltage MOSFETs
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.28 EUR
10+3.42 EUR
100+2.37 EUR
500+1.89 EUR
1000+1.78 EUR
2000+1.67 EUR
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TSM013NM04LTL RAGTaiwan Semiconductor CorporationDescription: 40V, 300A, SINGLE, N-CHANNEL LOW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 20A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TOLLA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6458 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TSM015NA03CR RLGTaiwan SemiconductorMOSFET 30V 205A N-Channel Power MOSFET
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
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TSM015NA03CR RLGTaiwan Semiconductor CorporationDescription: MOSFET N-CH 30V 205A 8PDFN
auf Bestellung 4988 Stücke:
Lieferzeit 10-14 Tag (e)
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TSM015NA03CR RLGTaiwan Semiconductor CorporationDescription: MOSFET N-CH 30V 205A 8PDFN
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
 Mindestbestellmenge: 2500 Stücke
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TSM018NA03CR RLGTaiwan Semiconductor CorporationDescription: MOSFET N-CH 30V 185A 8PDFN
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
 Mindestbestellmenge: 2500 Stücke
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TSM018NA03CR RLGTaiwan Semiconductor CorporationDescription: MOSFET N-CH 30V 185A 8PDFN
auf Bestellung 4815 Stücke:
Lieferzeit 10-14 Tag (e)
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TSM018NA03CR RLGTaiwan SemiconductorMOSFET 30V, 185A, Single N- Channel Power MOSFET
Produkt ist nicht verfügbar
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TSM018NB03CR RLGTaiwan Semiconductor CorporationDescription: MOSFET N-CH 30V 29A/194A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 194A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 29A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7252 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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TSM018NB03CR RLGTaiwan SemiconductorMOSFETs 30V, 194A, Single N-Channel Power MOSFET
auf Bestellung 956 Stücke:
Lieferzeit 10-14 Tag (e)
1+4 EUR
10+2.81 EUR
100+1.93 EUR
250+1.92 EUR
500+1.54 EUR
1000+1.51 EUR
2500+1.29 EUR
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TSM018NB03CR RLGTaiwan Semiconductor CorporationDescription: MOSFET N-CH 30V 29A/194A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 194A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 29A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7252 pF @ 15 V
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.76 EUR
10+3.06 EUR
100+2.09 EUR
500+1.68 EUR
1000+1.54 EUR
Mindestbestellmenge: 5 Stücke
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TSM018NM08TL RAGTaiwan Semiconductor CorporationDescription: 80V, 300A, SINGLE, N-CHANNEL LOW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TOLLA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12182 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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TSM018NM08TL RAGTaiwan Semiconductor CorporationDescription: 80V, 300A, SINGLE, N-CHANNEL LOW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TOLLA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12182 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 610 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.88 EUR
10+7.95 EUR
100+5.74 EUR
500+5.31 EUR
Mindestbestellmenge: 2 Stücke
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TSM018NM08TL RAGTaiwan SemiconductorMOSFETs 80V, 300A, Single, N-Channel Low Voltage MOSFETs
auf Bestellung 1980 Stücke:
Lieferzeit 10-14 Tag (e)
1+11.65 EUR
10+7.81 EUR
100+5.63 EUR
500+5.43 EUR
2000+4.88 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TSM019NH04CR RLGTaiwan Semiconductor CorporationDescription: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6029 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.38 EUR
10+4.82 EUR
50+3.72 EUR
100+3.38 EUR
500+2.8 EUR
Mindestbestellmenge: 3 Stücke
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TSM019NH04CR RLGTaiwan Semiconductor CorporationDescription: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6029 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.34 EUR
Mindestbestellmenge: 2500 Stücke
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TSM019NH04CR RLGTaiwan SemiconductorMOSFETs 40V, 100A, Single N-Channel Power MOSFET
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.25 EUR
10+4.76 EUR
100+3.33 EUR
500+2.76 EUR
2500+2.59 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TSM019NH04LCRTaiwan SemiconductorMOSFETs 40V, 100A, Single, N-Channel Low Voltage MOSFETs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSM019NH04LCRTaiwan SemiconductorTrans MOSFET N-CH 40V 100A 8-Pin PDFN-U EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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TSM019NH04LCR RLGTaiwan Semiconductor CorporationDescription: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V
auf Bestellung 4965 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.38 EUR
10+4.82 EUR
50+3.72 EUR
100+3.38 EUR
500+2.8 EUR
Mindestbestellmenge: 3 Stücke
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TSM019NH04LCR RLGTaiwan Semiconductor CorporationDescription: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TSM019NH04LCR RLGTaiwan SemiconductorMOSFETs 40V, 100A, Single N-Channel Power MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.25 EUR
10+4.76 EUR
100+3.33 EUR
500+2.76 EUR
2500+2.59 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TSM019NH04LCR RLGTaiwan SemiconductorTrans MOSFET N-CH 40V 100A 8-Pin PDFN-U EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TSM020N04LCR RLGTaiwan SemiconductorMOSFET 40V 170A Single N-Ch annel Power MOSFET
auf Bestellung 690 Stücke:
Lieferzeit 10-14 Tag (e)
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TSM020N04LCR RLGTaiwan Semiconductor CorporationDescription: MOSFET N-CH 40V 170A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 27A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7942 pF @ 20 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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TSM020NM10TL RAGTaiwan Semiconductor CorporationDescription: 100V, 300A, SINGLE, N-CHANNEL LO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TOLLA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11246 pF @ 50 V
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.09 EUR
10+8.12 EUR
100+5.87 EUR
500+5.49 EUR
Mindestbestellmenge: 2 Stücke
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TSM020NM10TL RAGTaiwan Semiconductor CorporationDescription: 100V, 300A, SINGLE, N-CHANNEL LO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TOLLA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11246 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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TSM020NM10TL RAGTaiwan SemiconductorMOSFETs 100V, 300A, Single, N-Channel Low Voltage MOSFETs
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1+12.23 EUR
10+8.21 EUR
100+5.95 EUR
500+5.81 EUR
4000+5.21 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TSM024NA04LCRTaiwan SemiconductorMOSFET Power MOSFET, N-CHL, 40V, 170A, 2.4mOhm
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
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TSM024NA04LCR RLGTaiwan SemiconductorMOSFET 40V 170A Single N-Ch annel Power MOSFET
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
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TSM024NA04LCR RLGTaiwan Semiconductor CorporationDescription: MOSFET N-CH 40V 170A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4224 pF @ 20 V
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.5 EUR
10+2.37 EUR
Mindestbestellmenge: 6 Stücke
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TSM024NA04LCR RLGTaiwan Semiconductor CorporationDescription: MOSFET N-CH 40V 170A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4224 pF @ 20 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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TSM025NB04CR RLGTaiwan Semiconductor CorporationDescription: MOSFET N-CH 40V 24A/161A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 161A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 24A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7150 pF @ 20 V
auf Bestellung 696 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.17 EUR
10+2.62 EUR
100+2.08 EUR
500+1.76 EUR
Mindestbestellmenge: 7 Stücke
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TSM025NB04CR RLGTaiwan SemiconductorMOSFET 40V 161Amp 2.5mOhm N Chan Mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSM025NB04CR RLGTaiwan Semiconductor CorporationDescription: MOSFET N-CH 40V 24A/161A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 161A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 24A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7150 pF @ 20 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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TSM025NB04LCRTaiwan SemiconductorLDO Voltage Regulators 40V, 161A, Single, N-Channel Low Voltage MOSFETs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSM025NB04LCRTaiwan SemiconductorTrans MOSFET N-CH 40V 161A 8-Pin PDFN EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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TSM025NB04LCR RLGTaiwan Semiconductor CorporationDescription: MOSFET N-CH 40V 24A/161A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 161A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 24A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6435 pF @ 20 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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TSM025NB04LCR RLGTaiwan Semiconductor CorporationDescription: MOSFET N-CH 40V 24A/161A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 161A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 24A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6435 pF @ 20 V
auf Bestellung 247 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.76 EUR
10+3.06 EUR
100+2.09 EUR
Mindestbestellmenge: 5 Stücke
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TSM025NB04LCR RLGTAIWAN SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSM025NB04LCR RLGTaiwan SemiconductorMOSFETs 40V, 161A, Single N-Channel Power MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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TSM025NH04CR RLGTaiwan Semiconductor CorporationDescription: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3794 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.82 EUR
Mindestbestellmenge: 2500 Stücke
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TSM025NH04CR RLGTaiwan SemiconductorMOSFETs 40V, 100A, Single N-Channel Power MOSFET
auf Bestellung 4973 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.71 EUR
10+3.71 EUR
100+2.57 EUR
500+2.07 EUR
1000+1.93 EUR
2500+1.86 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TSM025NH04CR RLGTaiwan Semiconductor CorporationDescription: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3794 pF @ 25 V
auf Bestellung 4930 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.05 EUR
10+3.36 EUR
100+2.68 EUR
500+2.26 EUR
1000+1.92 EUR
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TSM025NH04LCRTaiwan SemiconductorTrans MOSFET N-CH 40V 100A 8-Pin PDFN-U EP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TSM025NH04LCR RLGTaiwan Semiconductor CorporationDescription: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4179 pF @ 25 V
auf Bestellung 4995 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.7 EUR
10+3.69 EUR
100+2.55 EUR
500+2.06 EUR
1000+1.9 EUR
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TSM025NH04LCR RLGTaiwan SemiconductorMOSFETs 40V, 100A, Single N-Channel Power MOSFET
auf Bestellung 4987 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.71 EUR
10+3.71 EUR
100+2.57 EUR
500+2.07 EUR
1000+2 EUR
2500+1.86 EUR
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TSM025NH04LCR RLGTaiwan Semiconductor CorporationDescription: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4179 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2 EUR
Mindestbestellmenge: 2500 Stücke
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TSM026NA03CRTaiwan SemiconductorMOSFET Power MOSFET, N-CHL 30V, 168A, 2.6mOhm
auf Bestellung 100 Stücke:
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TSM026NA03CR RLGTaiwan Semiconductor CorporationDescription: MOSFET N-CH 30V 168A 8PDFN
auf Bestellung 4850 Stücke:
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TSM026NA03CR RLGTaiwan SemiconductorMOSFET 30V 168A Single N-Ch annel Power MOSFET
auf Bestellung 66 Stücke:
Lieferzeit 10-14 Tag (e)
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TSM026NA03CR RLGTaiwan Semiconductor CorporationDescription: MOSFET N-CH 30V 168A 8PDFN
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
 Mindestbestellmenge: 2500 Stücke
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TSM028N04PQ56 RLGTaiwan SemiconductorMOSFET 40V 140Amp N channel Mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSM032NH04CR RLGTaiwan Semiconductor CorporationDescription: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2896 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.71 EUR
10+3.02 EUR
100+2.07 EUR
500+1.65 EUR
1000+1.52 EUR
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TSM032NH04CR RLGTaiwan SemiconductorMOSFETs 40V, 81A, Single N-Channel Power MOSFET
auf Bestellung 2482 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.63 EUR
10+2.98 EUR
100+2.03 EUR
500+1.63 EUR
1000+1.5 EUR
2500+1.39 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TSM032NH04CR RLGTaiwan Semiconductor CorporationDescription: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2896 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.38 EUR
5000+1.29 EUR
Mindestbestellmenge: 2500 Stücke
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TSM032NH04LCRTaiwan SemiconductorMOSFETs 40V, 81A, Single, N-Channel Low Voltage MOSFETs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSM032NH04LCRTaiwan SemiconductorTrans MOSFET N-CH 40V 81A 8-Pin PDFN-U EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TSM032NH04LCR RLGTaiwan Semiconductor CorporationDescription: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.38 EUR
Mindestbestellmenge: 2500 Stücke
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TSM032NH04LCR RLGTaiwan Semiconductor CorporationDescription: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V
auf Bestellung 4220 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.71 EUR
10+3.02 EUR
100+2.07 EUR
500+1.65 EUR
1000+1.52 EUR
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TSM032NH04LCR RLGTaiwan SemiconductorMOSFETs 40V, 81A, Single N-Channel Power MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.63 EUR
10+2.98 EUR
100+2.03 EUR
500+1.63 EUR
1000+1.5 EUR
2500+1.39 EUR
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TSM033NA03CRTaiwan SemiconductorMOSFET Power MOSFET, N-CHL 30V, 129A, 3.3mOhm
auf Bestellung 70 Stücke:
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TSM033NA03CR RLGTaiwan Semiconductor CorporationDescription: MOSFET N-CH 30V 129A 8PDFN
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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TSM033NA03CR RLGTaiwan Semiconductor CorporationDescription: MOSFET N-CH 30V 129A 8PDFN
auf Bestellung 2340 Stücke:
Lieferzeit 10-14 Tag (e)
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TSM033NA03CR RLGTaiwan SemiconductorMOSFET 30V 129A Single N-Ch annel Power MOSFET
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TSM033NA04LCRTaiwan SemiconductorMOSFET Power MOSFET, N-CHL, 40V, 141A, 3.3mOhm
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TSM033NA04LCR RLGTaiwan Semiconductor CorporationDescription: MOSFET N-CH 40V 141A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 141A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 20 V
auf Bestellung 45 Stücke:
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10+2.45 EUR
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TSM033NA04LCR RLGTaiwan SemiconductorMOSFET Power MOSFET, N-CHL, 40V, 141A, 3.3mOhm
auf Bestellung 71 Stücke:
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TSM033NA04LCR RLGTaiwan Semiconductor CorporationDescription: MOSFET N-CH 40V 141A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 141A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 20 V
Produkt ist nicht verfügbar
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TSM033NB04CR RLGTAIWAN SEMICONDUCTORDescription: TAIWAN SEMICONDUCTOR - TSM033NB04CR RLG - Leistungs-MOSFET, n-Kanal, 40 V, 121 A, 2400 µohm, PDFN56, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 121A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.9V
euEccn: NLR
Verlustleistung: 107W
Bauform - Transistor: PDFN56
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 2400µohm
SVHC: No SVHC (27-Jun-2018)
auf Bestellung 2247 Stücke:
Lieferzeit 14-21 Tag (e)
70+3.59 EUR
102+2.28 EUR
112+1.92 EUR
500+1.71 EUR
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TSM033NB04CR RLGTaiwan Semiconductor CorporationDescription: MOSFET N-CH 40V 21A/121A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5022 pF @ 20 V
auf Bestellung 1122 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.58 EUR
10+2.27 EUR
100+1.54 EUR
500+1.23 EUR
1000+1.15 EUR
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TSM033NB04CR RLGTaiwan Semiconductor CorporationDescription: MOSFET N-CH 40V 21A/121A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5022 pF @ 20 V
Produkt ist nicht verfügbar
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TSM033NB04CR RLGTaiwan SemiconductorMOSFETs 40V, 121A, Single N-Channel Power MOSFET
auf Bestellung 3886 Stücke:
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1+3.8 EUR
10+2.24 EUR
100+1.58 EUR
500+1.33 EUR
1000+1.23 EUR
2500+1.13 EUR
5000+1.11 EUR
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TSM033NB04CR RLGTAIWAN SEMICONDUCTORDescription: TAIWAN SEMICONDUCTOR - TSM033NB04CR RLG - Leistungs-MOSFET, n-Kanal, 40 V, 121 A, 2400 µohm, PDFN56, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 121A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 107W
Gate-Source-Schwellenspannung, max.: 2.9V
euEccn: NLR
Verlustleistung: 107W
Bauform - Transistor: PDFN56
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0024ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 2400µohm
SVHC: No SVHC (27-Jun-2018)
auf Bestellung 2247 Stücke:
Lieferzeit 14-21 Tag (e)
100+3.59 EUR
102+2.28 EUR
112+1.92 EUR
500+1.71 EUR
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TSM033NB04LCRTaiwan SemiconductorTrans MOSFET N-CH 40V 121A 8-Pin PDFN EP T/R
Produkt ist nicht verfügbar
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TSM033NB04LCRTaiwan SemiconductorLDO Voltage Regulators 40V, 121A, Single, N-Channel Low Voltage MOSFETs
Produkt ist nicht verfügbar
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TSM033NB04LCR RLGTaiwan SemiconductorTSM033NB04LCR RLG Taiwan Semiconductor MOSFETs Transistor N-CH 40V 21A 8-Pin PDFN EP T/R - Arrow.com
Produkt ist nicht verfügbar
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TSM033NB04LCR RLGTaiwan Semiconductor CorporationDescription: MOSFET N-CH 40V 21A/121A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4456 pF @ 20 V
auf Bestellung 4354 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.58 EUR
10+2.27 EUR
100+1.54 EUR
500+1.23 EUR
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TSM033NB04LCR RLGTAIWAN SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 21A
Power dissipation: 36W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM033NB04LCR RLGTaiwan SemiconductorTSM033NB04LCR RLG Taiwan Semiconductor MOSFETs Transistor N-CH 40V 21A 8-Pin PDFN EP T/R - Arrow.com
Produkt ist nicht verfügbar
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TSM033NB04LCR RLGTaiwan Semiconductor CorporationDescription: MOSFET N-CH 40V 21A/121A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4456 pF @ 20 V
auf Bestellung 2500 Stücke:
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2500+1.01 EUR
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TSM033NB04LCR RLGTaiwan SemiconductorMOSFETs 40V, 121A, Single N-Channel Power MOSFET
Produkt ist nicht verfügbar
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TSM035NB04CZTaiwan Semiconductor CorporationDescription: MOSFET N-CH 40V 18A/157A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 157A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6990 pF @ 20 V
auf Bestellung 97 Stücke:
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5+4.77 EUR
50+2.36 EUR
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TSM035NB04CZ C0GTAIWAN SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 157A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 157A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM035NB04CZ C0GTaiwan SemiconductorMOSFETs 40V, 157A, Single N-Channel Power MOSFET
auf Bestellung 3881 Stücke:
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1+5.21 EUR
10+3.37 EUR
100+2.32 EUR
500+1.87 EUR
1000+1.71 EUR
2000+1.59 EUR
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TSM035NB04LCZ C0GTaiwan SemiconductorMOSFETs 40V, 157A, Single N-Channel Power MOSFET
Produkt ist nicht verfügbar
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TSM035NB04LCZ C0GTaiwan Semiconductor CorporationDescription: 40V, 157A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 157A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6350 pF @ 20 V
auf Bestellung 1861 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.14 EUR
10+2.67 EUR
100+1.82 EUR
500+1.45 EUR
1000+1.33 EUR
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TSM035NB04LCZ C0GTAIWAN SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 157A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 157A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 111nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM036N03PQ56Taiwan Semiconductor CorporationDescription: 30V, 124A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 22A, 10V
Power Dissipation (Max): 2.6W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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