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| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| ISZ080N10NM6ATMA1 | Infineon Technologies | Description: TRENCH >=100V PG-TSDSON-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 75A (Tc) Rds On (Max) @ Id, Vgs: 8.04mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 36µA Supplier Device Package: PG-TSDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| ISZ080N10NM6ATMA1 | Infineon Technologies | MOSFETs IFX FET >80 - 100V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| ISZ080N10NM6ATMA1 | INFINEON | Description: INFINEON - ISZ080N10NM6ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 75 A, 8040 µohm, TSDSON-FL, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 75A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 100W Gate-Source-Schwellenspannung, max.: 2.8V euEccn: NLR Verlustleistung: 100W Bauform - Transistor: TSDSON-FL Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 6 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0071ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 8040µohm SVHC: No SVHC (21-Jan-2025) | auf Bestellung 1074 Stücke: Lieferzeit 14-21 Tag (e) |
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| ISZ080N10NM6ATMA1 | Infineon Technologies | Description: TRENCH >=100V PG-TSDSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 75A (Tc) Rds On (Max) @ Id, Vgs: 8.04mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 36µA Supplier Device Package: PG-TSDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| ISZ080N10NM6ATMA1 | INFINEON | Description: INFINEON - ISZ080N10NM6ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 75 A, 8040 µohm, TSDSON-FL, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 75A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V euEccn: NLR Verlustleistung: 100W Bauform - Transistor: TSDSON-FL Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 6 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 8040µohm SVHC: No SVHC (21-Jan-2025) | auf Bestellung 1074 Stücke: Lieferzeit 14-21 Tag (e) |
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| ISZ0901NLSATMA1 | Infineon Technologies | Description: 25V, N-CH MOSFET, LOGIC LEVEL, P Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8-25 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 26W (Tc) Rds On (Max) @ Id, Vgs: 8.1mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| ISZ0901NLSATMA1 | Infineon Technologies | Description: 25V, N-CH MOSFET, LOGIC LEVEL, P Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8-25 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 26W (Tc) Rds On (Max) @ Id, Vgs: 8.1mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| ISZ0901NLSATMA1 | Infineon Technologies | MOSFET TRENCH <= 40V | auf Bestellung 3881 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISZ0901NLSATMA1 | INFINEON | Description: INFINEON - ISZ0901NLSATMA1 - Leistungs-MOSFET, n-Kanal, 25 V, 40 A, 5000 µohm, TSDSON-FL, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 25V rohsCompliant: YES Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 26W Gate-Source-Schwellenspannung, max.: 2V Verlustleistung: 26W SVHC: No SVHC (27-Jun-2018) Bauform - Transistor: TSDSON-FL Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal usEccn: EAR99 Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.005ohm Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 5000µohm | auf Bestellung 4059 Stücke: Lieferzeit 14-21 Tag (e) |
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| ISZ0901NLSATMA1 | Infineon Technologies | Description: 25V, N-CH MOSFET, LOGIC LEVEL, P Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 8.1mOhm @ 20A, 10V Power Dissipation (Max): 26W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-25 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 12 V | auf Bestellung 3565 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISZ106N12LM6ATMA1 | Infineon Technologies | Description: OPTIMOS 6 POWER-TRANSISTOR,120V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 62A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 28A, 10V Power Dissipation (Max): 2.5W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 35µA Supplier Device Package: PG-TSDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 60 V | auf Bestellung 2754 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISZ106N12LM6ATMA1 | Infineon Technologies | MOSFETs IFX FET >100-150V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| ISZ106N12LM6ATMA1 | Infineon Technologies | Description: OPTIMOS 6 POWER-TRANSISTOR,120V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 62A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 28A, 10V Power Dissipation (Max): 2.5W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 35µA Supplier Device Package: PG-TSDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 60 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| ISZ106N12LM6ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| ISZ113N10NM5LF2ATMA1 | INFINEON | Description: INFINEON - ISZ113N10NM5LF2ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 63 A, 0.0113 ohm, TSDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 63A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.9V euEccn: NLR Verlustleistung: 100W Bauform - Transistor: TSDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0113ohm SVHC: No SVHC (21-Jan-2025) | auf Bestellung 4664 Stücke: Lieferzeit 14-21 Tag (e) |
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| ISZ113N10NM5LF2ATMA1 | Infineon Technologies | Description: ISZ113N10NM5LF2ATMA1 MOSFET Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 36µA Supplier Device Package: PG-TSDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V | auf Bestellung 2447 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISZ113N10NM5LF2ATMA1 | INFINEON | Description: INFINEON - ISZ113N10NM5LF2ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 63 A, 0.0113 ohm, TSDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 63A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.9V euEccn: NLR Verlustleistung: 100W Bauform - Transistor: TSDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0113ohm SVHC: No SVHC (21-Jan-2025) | auf Bestellung 4664 Stücke: Lieferzeit 14-21 Tag (e) |
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| ISZ113N10NM5LF2ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| ISZ113N10NM5LF2ATMA1 | Infineon Technologies | Description: ISZ113N10NM5LF2ATMA1 MOSFET Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 36µA Supplier Device Package: PG-TSDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| ISZ113N10NM5LF2ATMA1 | Infineon Technologies | MOSFETs IFX FET >80 - 100V | auf Bestellung 1520 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISZ113N10NM5LFATMA1 | Infineon Technologies | Description: OPTIMOSTM5LINEARFET100V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TSDSON-8 FL Vgs(th) (Max) @ Id: 3.9V @ 36µA Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| ISZ113N10NM5LFATMA1 | Infineon Technologies | MOSFET | auf Bestellung 300 Stücke: Lieferzeit 234-238 Tag (e) |
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| ISZ113N10NM5LFATMA1 | Infineon Technologies | Description: OPTIMOSTM5LINEARFET100V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TSDSON-8 FL Vgs(th) (Max) @ Id: 3.9V @ 36µA Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| ISZ143N13NM6ATMA1 | Infineon Technologies | MOSFETs IFX FET >100-150V | auf Bestellung 510 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISZ143N13NM6ATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 13.6mOhm @ 20A, 15V Power Dissipation (Max): 2.5W (Ta), 95W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 35µA Supplier Device Package: PG-TSDSON-8-36 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 135 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 68 V | auf Bestellung 4775 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISZ143N13NM6ATMA1 | INFINEON | Description: INFINEON - ISZ143N13NM6ATMA1 - Leistungs-MOSFET, n-Kanal, 135 V, 54 A, 0.0136 ohm, TSDSON-FL, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 135V Dauer-Drainstrom Id: 54A hazardous: false Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.5V euEccn: NLR Verlustleistung: 95W Bauform - Transistor: TSDSON-FL Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 6 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 15V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0136ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| ISZ143N13NM6ATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 13.6mOhm @ 20A, 15V Power Dissipation (Max): 2.5W (Ta), 95W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 35µA Supplier Device Package: PG-TSDSON-8-36 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 135 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 68 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| ISZ15EP15LMATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Tape & Reel (TR) | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISZ15EP15LMATMA1 | Infineon Technologies | MOSFET | auf Bestellung 290 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISZ15EP15LMATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Cut Tape (CT) | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISZ173N15NM6ATMA1 | Infineon Technologies | MOSFETs IFX FET >100-150V | auf Bestellung 5180 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISZ173N15NM6ATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 16.3mOhm @ 16A, 15V Power Dissipation (Max): 2.5W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 35µA Supplier Device Package: PG-TSDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISZ173N15NM6ATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 16.3mOhm @ 16A, 15V Power Dissipation (Max): 2.5W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 35µA Supplier Device Package: PG-TSDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V | auf Bestellung 5878 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISZ230N10NM6ATMA1 | Infineon Technologies | Description: TRENCH >=100V PG-TSDSON-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 31A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V Power Dissipation (Max): 3W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 13µA Supplier Device Package: PG-TSDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 50 V | auf Bestellung 7718 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISZ230N10NM6ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 48W; PG-TDSON-8 FL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 31A Power dissipation: 48W Case: PG-TDSON-8 FL On-state resistance: 23mΩ Mounting: SMD Gate charge: 7.4nC Kind of channel: enhancement | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| ISZ230N10NM6ATMA1 | INFINEON | Description: INFINEON - ISZ230N10NM6ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 31 A, 0.023 ohm, TSDSON-FL, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 31A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V euEccn: NLR Verlustleistung: 48W Bauform - Transistor: TSDSON-FL Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 6 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.023ohm SVHC: No SVHC (21-Jan-2025) | auf Bestellung 1042 Stücke: Lieferzeit 14-21 Tag (e) |
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| ISZ230N10NM6ATMA1 | Infineon Technologies | Description: TRENCH >=100V PG-TSDSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 31A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V Power Dissipation (Max): 3W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 13µA Supplier Device Package: PG-TSDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 50 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISZ230N10NM6ATMA1 | INFINEON | Description: INFINEON - ISZ230N10NM6ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 31 A, 0.023 ohm, TSDSON-FL, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 31A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 48W Gate-Source-Schwellenspannung, max.: 2.8V euEccn: NLR Verlustleistung: 48W Bauform - Transistor: TSDSON-FL Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 6 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0196ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.023ohm SVHC: No SVHC (21-Jan-2025) | auf Bestellung 1042 Stücke: Lieferzeit 14-21 Tag (e) |
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| ISZ230N10NM6ATMA1 | Infineon Technologies | MOSFETs IFX FET >80 - 100V | auf Bestellung 9372 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISZ24DP10LMATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A Supplier Device Package: PG-TDSON-8-25 Drain to Source Voltage (Vdss): 100 V | auf Bestellung 2691 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISZ24DP10LMATMA1 | Infineon Technologies | MOSFETs IFX FET >80 - 100V | auf Bestellung 6118 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISZ24DP10LMATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A Supplier Device Package: PG-TDSON-8-25 Drain to Source Voltage (Vdss): 100 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| ISZ330N12LM6ATMA1 | Infineon Technologies | MOSFETs IFX FET >100-150V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| ISZ330N12LM6ATMA1 | Infineon Technologies | Description: OPTIMOS 6 POWER-TRANSISTOR,120V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 9A, 10V Power Dissipation (Max): 2.5W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 11µA Supplier Device Package: PG-TSDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| ISZ330N12LM6ATMA1 | Infineon Technologies | Description: OPTIMOS 6 POWER-TRANSISTOR,120V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 9A, 10V Power Dissipation (Max): 2.5W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 11µA Supplier Device Package: PG-TSDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| ISZ520N20NM6ATMA1 | Infineon Technologies | Description: TRENCH >=100V Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Supplier Device Package: PG-TSDSON-8-34 Vgs(th) (Max) @ Id: 4.5V @ 31µA Power Dissipation (Max): 2.5W (Ta), 88W (Tc) Rds On (Max) @ Id, Vgs: 47.8mOhm @ 15A, 15V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 26A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| ISZ520N20NM6ATMA1 | Infineon Technologies | MOSFETs IFX FET >150 - 400V | auf Bestellung 7135 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISZ520N20NM6ATMA1 | Infineon Technologies | Description: TRENCH >=100V Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Supplier Device Package: PG-TSDSON-8-34 Vgs(th) (Max) @ Id: 4.5V @ 31µA Power Dissipation (Max): 2.5W (Ta), 88W (Tc) Rds On (Max) @ Id, Vgs: 47.8mOhm @ 15A, 15V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 26A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) | auf Bestellung 2431 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISZ56DP15LMATMA1 | Infineon Technologies | MOSFETs TRENCH >=100V | auf Bestellung 33 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISZ56DP15LMATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.35A (Ta), 6.7A (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 724µA Supplier Device Package: PG-TSDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 75 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISZ56DP15LMATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.35A (Ta), 6.7A (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 724µA Supplier Device Package: PG-TSDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 75 V | auf Bestellung 5076 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISZ75DP15LMATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta), 5.1A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 543µA Supplier Device Package: PG-TSDSON-8-26 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 75 V | auf Bestellung 5210 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISZ75DP15LMATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta), 5.1A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 543µA Supplier Device Package: PG-TSDSON-8-26 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 75 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISZ75DP15LMATMA1 | Infineon Technologies | MOSFETs IFX FET >100-150V | auf Bestellung 1503 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISZ810P06LMATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V Packaging: Cut Tape (CT) | auf Bestellung 4721 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISZ810P06LMATMA1 | Infineon | P-Channel 60 V 19.5A (Tc) 83W (Tc) Surface Mount PG-TSDSON-8-26 Діоди та діодні збірки | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| ISZ810P06LMATMA1 | Infineon Technologies | MOSFETs TRENCH >=100V | auf Bestellung 6250 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISZ810P06LMATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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