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NDD01N60-1GON SemiconductorTrans MOSFET N-CH 600V 1.5A 3-Pin(3+Tab) IPAK Tube
auf Bestellung 1541 Stücke:
Lieferzeit 14-21 Tag (e)
1441+0.45 EUR
Mindestbestellmenge: 1441 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NDD01N60T4GonsemiMOSFET NFET DPAK 600V 1.5A 8.5O
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD01N60T4GonsemiDescription: MOSFET N-CH 600V 1.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD02N40-1GonsemiDescription: MOSFET N-CH 400V 1.7A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 121 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: I-PAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 220mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD02N40T4GonsemiDescription: MOSFET N-CH 400V 1.7A DPAK
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 220mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 121 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 39W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD02N40T4GOn SemiconductorMOSFET N-CH 400V 1.7A DPAK Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD02N40T4GonsemiDescription: MOSFET N-CH 400V 1.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 121 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 220mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD02N60Z-1GON SemiconductorTrans MOSFET N-CH 600V 2.2A 3-Pin(3+Tab) IPAK Tube
auf Bestellung 13350 Stücke:
Lieferzeit 14-21 Tag (e)
971+0.67 EUR
1053+0.61 EUR
10000+0.52 EUR
Mindestbestellmenge: 971 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NDD02N60Z-1GonsemiDescription: MOSFET N-CH 600V 2.2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD02N60Z-1GON SemiconductorTrans MOSFET N-CH 600V 2.2A 3-Pin(3+Tab) IPAK Tube
auf Bestellung 25185 Stücke:
Lieferzeit 14-21 Tag (e)
971+0.67 EUR
1053+0.61 EUR
10000+0.52 EUR
Mindestbestellmenge: 971 Stücke
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NDD02N60Z-1GON SemiconductorTrans MOSFET N-CH 600V 2.2A 3-Pin(3+Tab) IPAK Tube
auf Bestellung 326825 Stücke:
Lieferzeit 14-21 Tag (e)
971+0.67 EUR
1053+0.61 EUR
10000+0.52 EUR
100000+0.43 EUR
Mindestbestellmenge: 971 Stücke
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NDD02N60Z-1GonsemiDescription: MOSFET N-CH 600V 2.2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 25 V
auf Bestellung 369185 Stücke:
Lieferzeit 10-14 Tag (e)
699+0.76 EUR
Mindestbestellmenge: 699 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NDD02N60Z-1GONSEMIDescription: ONSEMI - NDD02N60Z-1G - Leistungs-MOSFET, n-Kanal, 600 V, 2.2 A, 4 ohm, TO-251 (IPAK), Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 600V
rohsCompliant: YES
Dauer-Drainstrom Id: 2.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
euEccn: NLR
Verlustleistung: 57W
Bauform - Transistor: TO-251 (IPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 4ohm
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 88500 Stücke:
Lieferzeit 14-21 Tag (e)
1275+0.77 EUR
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NDD02N60Z-1GON SemiconductorMOSFET NFET IPAK 600V 2.2A 4.8R
auf Bestellung 1439 Stücke:
Lieferzeit 10-14 Tag (e)
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NDD02N60Z-1GON SemiconductorTrans MOSFET N-CH 600V 2.2A 3-Pin(3+Tab) IPAK Tube
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
971+0.67 EUR
1053+0.61 EUR
Mindestbestellmenge: 971 Stücke
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NDD02N60ZT4GON SemiconductorTrans MOSFET N-CH 600V 2.2A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 1598 Stücke:
Lieferzeit 14-21 Tag (e)
971+0.67 EUR
1053+0.61 EUR
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NDD02N60ZT4GonsemiDescription: MOSFET N-CH 600V 2.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD02N60ZT4GOn SemiconductorTrans MOSFET N-CH 600V 2.2A DPAK Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD02N60ZT4GONSEMIDescription: ONSEMI - NDD02N60ZT4G - MOSFET,N CH,W DIODE,600V,2.2A,DPAK
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 53629 Stücke:
Lieferzeit 14-21 Tag (e)
322+0.77 EUR
Mindestbestellmenge: 322 Stücke
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NDD02N60ZT4GON SemiconductorTrans MOSFET N-CH 600V 2.2A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 47414 Stücke:
Lieferzeit 14-21 Tag (e)
971+0.67 EUR
1053+0.61 EUR
10000+0.52 EUR
Mindestbestellmenge: 971 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NDD02N60ZT4GON SemiconductorTrans MOSFET N-CH 600V 2.2A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 3767 Stücke:
Lieferzeit 14-21 Tag (e)
971+0.67 EUR
1053+0.61 EUR
Mindestbestellmenge: 971 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NDD02N60ZT4GonsemiDescription: MOSFET N-CH 600V 2.2A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
auf Bestellung 52779 Stücke:
Lieferzeit 10-14 Tag (e)
699+0.79 EUR
Mindestbestellmenge: 699 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NDD03N40Z-1GonsemiDescription: MOSFET N-CH 400V 2.1A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD03N40Z-1GON SemiconductorMOSFET NFET DPAK 400V 2.4A 3.4OH
Produkt ist nicht verfügbar
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NDD03N40Z-1GonsemiDescription: MOSFET N-CH 400V 2.1A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
auf Bestellung 10125 Stücke:
Lieferzeit 10-14 Tag (e)
1110+0.52 EUR
Mindestbestellmenge: 1110 Stücke
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NDD03N40Z-1GONSEMIDescription: ONSEMI - NDD03N40Z-1G - NDD03N40Z-1G, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 10125 Stücke:
Lieferzeit 14-21 Tag (e)
1350+0.67 EUR
Mindestbestellmenge: 1350 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NDD03N40ZT4GonsemiDescription: MOSFET N-CH 400V 2.1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD03N40ZT4GONSEMIDescription: ONSEMI - NDD03N40ZT4G - NDD03N40ZT4G, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.67 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NDD03N40ZT4GonsemiDescription: MOSFET N-CH 400V 2.1A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
1110+0.52 EUR
Mindestbestellmenge: 1110 Stücke
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NDD03N40ZT4GON SemiconductorMOSFET NFET DPAK 60V 2.4A 3.4OHM
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
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NDD03N50Z-1GONSEMIDescription: ONSEMI - NDD03N50Z-1G - NDD03N50Z-1G, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 2656 Stücke:
Lieferzeit 14-21 Tag (e)
1275+0.73 EUR
Mindestbestellmenge: 1275 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NDD03N50Z-1GonsemiDescription: MOSFET N-CH 500V 2.6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.15A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD03N50Z-1GonsemiDescription: MOSFET N-CH 500V 2.6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.15A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 25 V
auf Bestellung 2656 Stücke:
Lieferzeit 10-14 Tag (e)
699+0.77 EUR
Mindestbestellmenge: 699 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NDD03N50ZT4GonsemiDescription: MOSFET N-CH 500V 2.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.15A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 329 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD03N50ZT4GONSEMIDescription: ONSEMI - NDD03N50ZT4G - MOSFET,N CH,W DIODE,500V,2.6A,DPAK
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 21261 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.73 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NDD03N50ZT4GonsemiDescription: MOSFET N-CH 500V 2.6A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.15A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 329 pF @ 25 V
auf Bestellung 20236 Stücke:
Lieferzeit 10-14 Tag (e)
699+0.77 EUR
Mindestbestellmenge: 699 Stücke
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NDD03N60Z-1GonsemiDescription: MOSFET N-CH 600V 2.6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
auf Bestellung 43072 Stücke:
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1010+0.55 EUR
Mindestbestellmenge: 1010 Stücke
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NDD03N60Z-1GONSEMIDescription: ONSEMI - NDD03N60Z-1G - NDD03N60Z-1G, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 43072 Stücke:
Lieferzeit 14-21 Tag (e)
1800+0.5 EUR
Mindestbestellmenge: 1800 Stücke
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NDD03N60Z-1GON SemiconductorTrans MOSFET N-CH 600V 2.6A 3-Pin(3+Tab) IPAK Tube
auf Bestellung 725 Stücke:
Lieferzeit 14-21 Tag (e)
476+0.36 EUR
Mindestbestellmenge: 476 Stücke
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NDD03N60Z-1GonsemiDescription: MOSFET N-CH 600V 2.6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD03N60Z-1GON Semiconductor
auf Bestellung 10 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NDD03N60Z-1GON SemiconductorTrans MOSFET N-CH 600V 2.6A 3-Pin(3+Tab) IPAK Tube
auf Bestellung 725 Stücke:
Lieferzeit 14-21 Tag (e)
476+0.36 EUR
Mindestbestellmenge: 476 Stücke
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NDD03N60ZG
auf Bestellung 75 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NDD03N60ZT4GonsemiDescription: MOSFET N-CH 600V 2.6A DPAK
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 61W (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD03N60ZT4GonsemiMOSFET NFET DPAK 2.6A 3.6R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD03N60ZT4GONSEMIDescription: ONSEMI - NDD03N60ZT4G - MOSFET,N CH,W DIODE,600V,2.6A,DPAK
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NDD03N80Z-1GON SemiconductorMOSFET NFET DPAK 800V 2.9A 4.5OH
auf Bestellung 1110 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NDD03N80Z-1GONSEMIDescription: ONSEMI - NDD03N80Z-1G - NDD03N80Z-1G, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 141954 Stücke:
Lieferzeit 14-21 Tag (e)
900+1.32 EUR
Mindestbestellmenge: 900 Stücke
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NDD03N80Z-1GonsemiDescription: MOSFET N-CH 800V 2.9A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.2A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
auf Bestellung 108204 Stücke:
Lieferzeit 10-14 Tag (e)
701+0.86 EUR
Mindestbestellmenge: 701 Stücke
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NDD03N80Z-1GonsemiDescription: MOSFET N-CH 800V 2.9A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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NDD03N80ZT4GOn SemiconductorMOSFET, N-CH, 800V, 2.9A, TO-252-3 Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD03N80ZT4GonsemiDescription: MOSFET N-CH 800V 2.9A DPAK-3
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK-3
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.2A, 10V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD03N80ZT4GonsemiDescription: MOSFET N-CH 800V 2.9A DPAK-3
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK-3
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
701+0.86 EUR
Mindestbestellmenge: 701 Stücke
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NDD03N80ZT4GonsemiDescription: MOSFET N-CH 800V 2.9A DPAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.2A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Produkt ist nicht verfügbar
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NDD03N80ZT4GonsemiMOSFET Power MOSFET 800V 2.9A 4.5 Ohm Single N-Channel DPAK
Produkt ist nicht verfügbar
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NDD04N50Z-1GONSEMIDescription: ONSEMI - NDD04N50Z-1G - NDD04N50Z-1G, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 28275 Stücke:
Lieferzeit 14-21 Tag (e)
975+0.98 EUR
Mindestbestellmenge: 975 Stücke
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NDD04N50Z-1GON SemiconductorMOSFET 600V 3A HV MOSFET IPAK
auf Bestellung 1575 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NDD04N50Z-1GonsemiDescription: MOSFET N-CH 500V 3A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.5A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 308 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD04N50Z-1GonsemiDescription: MOSFET N-CH 500V 3A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.5A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 308 pF @ 25 V
auf Bestellung 28275 Stücke:
Lieferzeit 10-14 Tag (e)
519+1.06 EUR
Mindestbestellmenge: 519 Stücke
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NDD04N50ZT4GonsemiDescription: MOSFET N-CH 500V 3A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.5A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 308 pF @ 25 V
auf Bestellung 152061 Stücke:
Lieferzeit 10-14 Tag (e)
519+1.06 EUR
Mindestbestellmenge: 519 Stücke
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NDD04N50ZT4GONSEMIDescription: ONSEMI - NDD04N50ZT4G - MOSFET,N CH,W DIODE,500V,3A,DPAK
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 155796 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.98 EUR
Mindestbestellmenge: 2500 Stücke
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NDD04N50ZT4GONN
auf Bestellung 907 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NDD04N50ZT4GonsemiDescription: MOSFET N-CH 500V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.5A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 308 pF @ 25 V
Produkt ist nicht verfügbar
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NDD04N50ZT4GON SemiconductorMOSFET 500V 3A HV MOSFET DPAK
auf Bestellung 814 Stücke:
Lieferzeit 10-14 Tag (e)
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NDD04N60Z-1GonsemiDescription: MOSFET N-CH 600V 4.1A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD04N60Z-1GON SemiconductorMOSFET NFET IPAK 600V 4A 1.8R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD04N60ZT4GonsemiMOSFETs NFET DPAK 600V 4A 1.8R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD04N60ZT4GOn SemiconductorN-Ch 600V 4.1A DPAK Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD04N60ZT4GonsemiDescription: MOSFET N-CH 600V 4.1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD05N50Z-1GonsemiDescription: MOSFET N-CH 500V 4.7A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD05N50Z-1GONSEMIDescription: ONSEMI - NDD05N50Z-1G - Leistungs-MOSFET, n-Kanal, 500 V, 4.7 A, 1.25 ohm, TO-251 (IPAK), Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 500V
rohsCompliant: YES
Dauer-Drainstrom Id: 4.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
euEccn: NLR
Verlustleistung: 83W
Bauform - Transistor: TO-251 (IPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1.25ohm
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 236925 Stücke:
Lieferzeit 14-21 Tag (e)
262+0.95 EUR
Mindestbestellmenge: 262 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NDD05N50Z-1GonsemiDescription: MOSFET N-CH 500V 4.7A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
auf Bestellung 665325 Stücke:
Lieferzeit 10-14 Tag (e)
683+0.81 EUR
Mindestbestellmenge: 683 Stücke
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NDD05N50Z-1G9onsemiDescription: RF MOSFET 500V
Packaging: Bulk
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
952+0.61 EUR
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NDD05N50Z-1G9ONSEMIDescription: ONSEMI - NDD05N50Z-1G9 - NFET DPAK 500V 4.7A 1.5OH
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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1145+0.73 EUR
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NDD05N50ZT4GonsemiDescription: MOSFET N-CH 500V 4.7A DPAK
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NDD05N50ZT4GON SemiconductorMOSFET NFET IPAK 500V 5A 1.2OHM
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NDD05N50ZT4GonsemiDescription: MOSFET N-CH 500V 4.7A DPAK
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NDD36PT6-2AITInsignis Technology CorporationDescription: IC SDRAM 256MBIT 200MHZ 66TSOP
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NDD36PT6-2AITInsignis Technology CorporationDescription: IC SDRAM 256MBIT 200MHZ 66TSOP
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NDD36PT6-2AIT TRInsignis Technology CorporationDescription: IC DRAM 256MBIT PAR 66TSOP II
Packaging: Cut Tape (CT)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 200 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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NDD36PT6-2AIT TRInsignis Technology CorporationDescription: IC DRAM 256MBIT PAR 66TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 200 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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NDD5060
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NDD506AFAIRCHILTO-263
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NDD506AL
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NDD56PT6-2AIT TRInsignis Technology CorporationDescription: IC DRAM 512MBIT SSTL 66TSOPII
Packaging: Cut Tape (CT)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 200 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: SSTL_2
Access Time: 700 ps
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
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10+6.89 EUR
25+6.69 EUR
50+6.53 EUR
100+6.38 EUR
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500+6.02 EUR
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NDD56PT6-2AIT TRInsignis Technology CorporationDescription: IC DRAM 512MBIT SSTL 66TSOPII
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 200 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: SSTL_2
Access Time: 700 ps
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
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NDD60N360U1-1GonsemiDescription: MOSFET N-CH 600V 11A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I-PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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NDD60N360U1-1GON SemiconductorTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) IPAK Tube
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500+2.61 EUR
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10000+2.05 EUR
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NDD60N360U1-1GonsemiMOSFETs NFET DPAK 600V 114A 360MO
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NDD60N360U1-1GONSEMIDescription: ONSEMI - NDD60N360U1-1G - NDD60N360U1-1G, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 37650 Stücke:
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375+2.9 EUR
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NDD60N360U1-1GonsemiDescription: MOSFET N-CH 600V 11A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
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NDD60N360U1-1GON SemiconductorTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) IPAK Tube
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500+2.61 EUR
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NDD60N360U1-35GONSEMIDescription: ONSEMI - NDD60N360U1-35G - NDD60N360U1-35G, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 32775 Stücke:
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375+2.7 EUR
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NDD60N360U1-35GonsemiDescription: MOSFET N-CH 600V 11A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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NDD60N360U1-35GonsemiDescription: MOSFET N-CH 600V 11A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
auf Bestellung 32775 Stücke:
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211+2.53 EUR
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NDD60N360U1-35GON SemiconductorMOSFET NFET DPAK 600V 114A 360MO
auf Bestellung 525 Stücke:
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NDD60N360U1T4GON SemiconductorDescription: MOSFET N-CH 600V 114A DPAK
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NDD60N360U1T4GON SemiconductorMOSFET NFET DPAK 600V 114A 360MO
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NDD60N360U1T4GONSEMIDescription: ONSEMI - NDD60N360U1T4G - NDD60N360U1T4G, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 37626 Stücke:
Lieferzeit 14-21 Tag (e)
2500+2.9 EUR
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NDD60N360U1T4GOn SemiconductorMOSFET N-CH 600V 114A DPAK Транзистори
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