Produkte > DMN
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN3032LQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V SOT23 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3032LQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V SOT23 T&R 3K | auf Bestellung 1835 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3032LQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 481 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 800mW Rds On (Max) @ Id, Vgs: 31mOhm @ 5.8A, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) | auf Bestellung 39000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3033LDM | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3033LDM-7 | Diodes Incorporated | MOSFETs NMOS-SINGLE | auf Bestellung 1225 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3033LDM-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 6.9A SOT-26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 6.9A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3033LDM-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 6.9A SOT-26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 6.9A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V | auf Bestellung 13649 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3033LDM-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 2W; SOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.8A Power dissipation: 2W Case: SOT26 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement | auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| DMN3033LSD | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3033LSD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 6.9A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 6.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active | auf Bestellung 805 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3033LSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 6.9A 8-Pin SO T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| DMN3033LSD-13 | Diodes Incorporated | MOSFETs NMOS-DUAL | auf Bestellung 104 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3033LSD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 6.9A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 6.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3033LSD-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.8A Pulsed drain current: 30A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 13nC Kind of package: 13 inch reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3033LSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 6.9A 8-Pin SO T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| DMN3033LSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 6.9A 8-Pin SO T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3033LSDQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.8A Pulsed drain current: 30A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 13nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3033LSDQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 6.9A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 6.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active | auf Bestellung 29893 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3033LSDQ-13 | Diodes Zetex | Trans MOSFET N-CH 30V 6.9A 8-Pin SO T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3033LSDQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 6.9A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 6.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active | auf Bestellung 27500 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3033LSDQ-13 | Diodes Incorporated | MOSFETs Dual N-Ch Enh FET 20Vdss 20Vgss 30A | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3033LSN | Diodes Incorporated | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3033LSN-7 | Diodes Zetex | Trans MOSFET N-CH 30V 6A 3-Pin SC-59 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| DMN3033LSN-7 | Diodes Incorporated | MOSFETs N-Channel | auf Bestellung 7290 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3033LSN-7 | Diodes Zetex | Trans MOSFET N-CH 30V 6A 3-Pin SC-59 T/R | auf Bestellung 2944 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| DMN3033LSN-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 6A SC59-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SC-59-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V | auf Bestellung 97097 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3033LSN-7 | Diodes Zetex | Trans MOSFET N-CH 30V 6A 3-Pin SC-59 T/R | auf Bestellung 2944 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| DMN3033LSN-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 6A SC59-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SC-59-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V | auf Bestellung 96000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3033LSNQ-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 6A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SC-59-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3033LSNQ-13 | Diodes Incorporated | MOSFETs 30V N-Ch Enh FET 20Vgs 6A 1.4W 2.1V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3033LSNQ-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 6A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SC-59-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V | auf Bestellung 8876 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3033LSNQ-7 | Diodes Incorporated | MOSFETs 30V N-Ch Enh FET 20Vgs 6A 1.4W 2.1V | auf Bestellung 410 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3033LSNQ-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 6A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SC-59-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3033LSNQ-7 | Diodes Zetex | N-Channel Enhancement Mode Mosfet | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| DMN3035LWN-13 | Diodes Incorporated | Description: MOSFET 2N-CH 5.5A 8VDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 399pF @ 15V Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: V-DFN3020-8 Part Status: Active | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3035LWN-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V V-DFN3020-8 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3035LWN-7 | DIODES INC. | Description: DIODES INC. - DMN3035LWN-7 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 5.5 A, 5.5 A, 0.035 ohm tariffCode: 85412100 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 5.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 30V Dauer-Drainstrom Id, n-Kanal: 5.5A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 1.78W Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: V-DFN3020 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.035ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.78W Betriebstemperatur, max.: 150°C | auf Bestellung 2635 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| DMN3035LWN-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 5.5A 8VDFN Part Status: Active Supplier Device Package: V-DFN3020-8 (Type N) Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 399pF @ 15V Current - Continuous Drain (Id) @ 25°C: 5.5A Drain to Source Voltage (Vdss): 30V Power - Max: 770mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) | auf Bestellung 78000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3035LWN-7 | DIODES INC. | Description: DIODES INC. - DMN3035LWN-7 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 5.5 A, 5.5 A, 0.035 ohm tariffCode: 85412100 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 5.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 30V Dauer-Drainstrom Id, n-Kanal: 5.5A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 1.78W Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: V-DFN3020 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.035ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.78W Betriebstemperatur, max.: 150°C | auf Bestellung 2635 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| DMN3035LWN-7 | Diodes Incorporated | MOSFETs N-Ch 30V Dual Enh 30Vgss 0.77W 399pF | auf Bestellung 3245 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3035LWN-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 5.5A 8VDFN Part Status: Active Supplier Device Package: V-DFN3020-8 (Type N) Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 399pF @ 15V Current - Continuous Drain (Id) @ 25°C: 5.5A Drain to Source Voltage (Vdss): 30V Power - Max: 770mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) | auf Bestellung 80638 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3042L | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3042L-13 | Diodes Zetex | Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| DMN3042L-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 5.8A SOT23 Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 720mW (Ta) Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) | auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3042L-13 | DIODES INC. | Description: DIODES INC. - DMN3042L-13 - Leistungs-MOSFET, n-Kanal, 30 V, 5.8 A, 0.021 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 5.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Gate-Source-Schwellenspannung, max.: 1.4V Verlustleistung: 720mW SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.021ohm | auf Bestellung 2915 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| DMN3042L-13 | Diodes Zetex | Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| DMN3042L-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 5.8A SOT23 Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 720mW (Ta) Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3042L-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 30A; 1.4W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Pulsed drain current: 30A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 48mΩ Mounting: SMD Gate charge: 20nC Kind of package: 13 inch reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3042L-13 | DIODES INC. | Description: DIODES INC. - DMN3042L-13 - Leistungs-MOSFET, n-Kanal, 30 V, 5.8 A, 0.021 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 5.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 1.4V Verlustleistung: 720mW SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.021ohm | auf Bestellung 2915 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| DMN3042L-13 | Diodes Incorporated | MOSFETs 30V N-Ch Enh Mode 26.5mOhm 12Vgs 570pF | auf Bestellung 47393 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3042L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3042L-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 0.72W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5A Power dissipation: 0.72W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 32mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement | auf Bestellung 58 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| DMN3042L-7 | Diodes Incorporated | MOSFETs 30V N-Ch Enh Mode 26.5mOhm 10V 5.8A | auf Bestellung 62063 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3042L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 5.8A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V Power Dissipation (Max): 720mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V | auf Bestellung 49599 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3042L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R | auf Bestellung 1065000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| DMN3042L-7 | Diodes | Trans MOSFET Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3042L-7 | DIODES INC. | Description: DIODES INC. - DMN3042L-7 - Leistungs-MOSFET, n-Kanal, 30 V, 5.8 A, 0.0265 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 5.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 720mW Gate-Source-Schwellenspannung, max.: 1.4V Verlustleistung: 720mW SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal usEccn: EAR99 Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.021ohm Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.0265ohm | auf Bestellung 768 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| DMN3042L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| DMN3042L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 5.8A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V Power Dissipation (Max): 720mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V | auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3042L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| DMN3042L-7 | Diodes INC. | N-канальний ПТ, Udss, В = 30, Id = 5,8 А, Ciss, пФ @ Uds, В = 860 @ 15, Qg, нКл = 20 @ 10 В, Rds = 26,5 мОм @ 5,8 A, 10 В, Ugs(th) = 1,4 В @ 250 мкА, Р, Вт = 0,72 Вт, Тексп, °C = -55...+150,... Транзистори Корпус: SOT-23-3 Од. вим: шт Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3042L-7 | DIODES INC. | Description: DIODES INC. - DMN3042L-7 - Leistungs-MOSFET, n-Kanal, 30 V, 5.8 A, 0.0265 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 5.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 1.4V Verlustleistung: 720mW SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.0265ohm | auf Bestellung 768 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| DMN3042L-7-ML | MOSLEADER | Description: N 30V 5.8A SOT23 Packaging: Tape & Reel (TR) | auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3042LFDF-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 7A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 4A, 10V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 50 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3042LFDF-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 35A; 2.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.6A Pulsed drain current: 35A Power dissipation: 2.1W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 50mΩ Mounting: SMD Gate charge: 13.3nC Kind of package: 13 inch reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3042LFDF-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3042LFDF-7 | Diodes Zetex | Trans MOSFET N-CH 30V 7A 6-Pin UDFN EP T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| DMN3042LFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 7A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 4A, 10V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 15 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3042LFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 35A; 2.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.6A Pulsed drain current: 35A Power dissipation: 2.1W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 50mΩ Mounting: SMD Gate charge: 13.3nC Kind of package: 7 inch reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3042LFDF-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V U-DFN2020-6 T&R 3K | auf Bestellung 104 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3042LFDF-7 | Diodes Zetex | Trans MOSFET N-CH 30V 7A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3042LFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 7A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 4A, 10V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 15 V | auf Bestellung 3270 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3050S | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3050S-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 5.2A SOT-23 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3050S-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 5.2A SOT-23 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3050S-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 5.2A SOT-23 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3051L | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3051L-7 | Diodes Incorporated | MOSFETs 1.4W 30V 5.8A | auf Bestellung 2577 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3051L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 5.8A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 5.8A, 10V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3051L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 5.8A SOT23-3 Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 5.8A, 10V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) | auf Bestellung 14761 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3051LDM | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3051LDM-7 | DIODES INC. | Description: DIODES INC. - DMN3051LDM-7 - Leistungs-MOSFET, n-Kanal, 30 V, 4 A, 0.028 ohm, SOT-26, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 900mW Bauform - Transistor: SOT-26 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.028ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2520 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| DMN3051LDM-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 4A SOT26 Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 5 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-26 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) | auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3051LDM-7 | DIODES INC. | Description: DIODES INC. - DMN3051LDM-7 - Leistungs-MOSFET, n-Kanal, 30 V, 4 A, 0.028 ohm, SOT-26, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 900mW Bauform - Transistor: SOT-26 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.028ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2520 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| DMN3051LDM-7 | Diodes Incorporated | MOSFET 30V 4A N-CHANNEL | auf Bestellung 3700 Stücke: Lieferzeit 295-299 Tag (e) |
| ||||||||||||||||
| DMN3051LDM-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 4A SOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 5 V | auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3052L | Diodes Incorporated | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3052L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 5.4A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2V, 10V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 5.8A, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3052L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 5.4A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2V, 10V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 5.8A, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3052LSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 7.1A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 5 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3052LSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 7.1A 8SOP Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 10V Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V | auf Bestellung 726 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3052LSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 7.1A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 5 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3052S | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3053L-13 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3053L-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 4A SOT23-3 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3053L-13 | Diodes Incorporated | MOSFETs 30V N-Ch Enh FET 12Vgss 0.76W 676pF | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3053L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 4A SOT23 Input Capacitance (Ciss) (Max) @ Vds: 676 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 760mW (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| DMN3053L-7 | DIODES INC. | Description: DIODES INC. - DMN3053L-7 - Leistungs-MOSFET, n-Kanal, 30 V, 4 A, 0.036 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 760mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.036ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 955 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| DMN3053L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 410 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 410 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN3053L-7 | Diodes Incorporated | MOSFETs 30V N-Ch Enh FET 12Vgss 0.76W 676pF | auf Bestellung 3653 Stücke: Lieferzeit 10-14 Tag (e) |
|