Produkte > DMT
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| DMTH6016LFDFWQ-7R | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V | auf Bestellung 66997 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LFVW-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6016LFVW-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 41A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LFVW-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 41A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 86000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LFVW-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6016LFVWQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LFVWQ-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 41A POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 1.17W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 1121 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LFVWQ-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 41A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 1.17W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6016LFVWQ-13-A | Diodes Incorporated | Description: MOSFET BVDSS: 41V~60V POWERDI333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 1.17W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6016LFVWQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 41A Automotive AEC-Q101 8-Pin PowerDI EP T/R | auf Bestellung 76000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6016LFVWQ-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 41A POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 1.17W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 1065 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LFVWQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 41A Automotive AEC-Q101 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6016LFVWQ-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 41A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 1.17W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6016LFVWQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 41A Automotive AEC-Q101 8-Pin PowerDI EP T/R | auf Bestellung 76000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6016LFVWQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V | auf Bestellung 1827 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LFVWQ-7-A | Diodes Incorporated | Description: MOSFET BVDSS: 41V~60V POWERDI333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 1.17W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LK3-13 | Diodes Zetex | Trans MOSFET N-CH 60V 10.8A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6016LK3-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 10.8 TO252 T&R Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 46.9A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LK3-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V | auf Bestellung 9406 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LK3-13 | Diodes Zetex | Trans MOSFET N-CH 60V 10.8A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6016LK3-13 | Diodes Zetex | Trans MOSFET N-CH 60V 10.8A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6016LK3-13 | Diodes Zetex | Trans MOSFET N-CH 60V 10.8A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6016LK3-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 10.8 TO252 T&R Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 46.9A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 61863 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LK3Q-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V | auf Bestellung 1900 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6016LK3Q-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 10.8 TO252 T&R Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 46.9A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 374980 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LK3Q-13 | Diodes Zetex | Trans MOSFET N-CH 60V 10.8A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R | auf Bestellung 185000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6016LK3Q-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 10.8 TO252 T&R Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 46.9A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 372500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LK3Q-13 | Diodes Zetex | Trans MOSFET N-CH 60V 10.8A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6016LPD | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6016LPD-13 | Diodes Zetex | Trans MOSFET N-CH 60V 9.2A 8-Pin PowerDI EP T/R | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6016LPD-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V~60V PowerDI5060-8 T&R 2.5K | auf Bestellung 1791 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LPD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 9.2A PWRDI50 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta), 37.5W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 119625 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LPD-13 | Diodes Zetex | Trans MOSFET N-CH 60V 9.2A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6016LPD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 9.2A PWRDI50 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta), 37.5W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 117500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LPDQ | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6016LPDQ-13 | Diodes Zetex | Trans MOSFET N-CH 60V 9.2A 8-Pin PowerDI EP T/R Automotive AEC-Q101 | auf Bestellung 2397500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6016LPDQ-13 | Diodes Zetex | Trans MOSFET N-CH 60V 9.2A Automotive AEC-Q101 8-Pin PowerDI EP T/R | auf Bestellung 945000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6016LPDQ-13 | Diodes Zetex | Trans MOSFET N-CH 60V 9.2A 8-Pin PowerDI EP T/R Automotive AEC-Q101 | auf Bestellung 160000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6016LPDQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V | auf Bestellung 2458 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LPDQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 9.2A PWRDI50 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta), 37.5W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 707 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LPDQ-13 | Diodes Zetex | Trans MOSFET N-CH 60V 9.2A 8-Pin PowerDI EP T/R Automotive AEC-Q101 | auf Bestellung 160000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6016LPDQ-13 | Diodes Zetex | Trans MOSFET N-CH 60V 9.2A 8-Pin PowerDI EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6016LPDQ-13 | Diodes Zetex | Trans MOSFET N-CH 60V 9.2A Automotive AEC-Q101 8-Pin PowerDI EP T/R | auf Bestellung 97500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6016LPDQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 9.2A PWRDI50 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta), 37.5W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6016LPDQ-13-52 | Diodes Zetex | Trans MOSFET N-CH 60V 9.2A Automotive AEC-Q101 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6016LPDWQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V PowerDI5060-8 T&R 2.5K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6016LPDWQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 41V~60V POWERDI506 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta), 37.5W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (SWP) Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6016LPDWQ-13 | Diodes Zetex | MOSFET BVDSS: 41V60V PowerDI5060-8 T&R 2.5K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6016LPS-13 | DIODES INC. | Description: DIODES INC. - DMTH6016LPS-13 - Leistungs-MOSFET, n-Kanal, 60 V, 37.1 A, 0.0124 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 37.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 37.5W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0124ohm SVHC: Lead (27-Jun-2024) | auf Bestellung 1639 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6016LPS-13 | Diodes Incorporated | Description: MOSFET N-CHA 60V 10.6A POWERDI Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 37.1A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 37.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 8860 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LPS-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V | auf Bestellung 480 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LPS-13 | DIODES INC. | Description: DIODES INC. - DMTH6016LPS-13 - Leistungs-MOSFET, n-Kanal, 60 V, 37.1 A, 0.0124 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 37.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 37.5W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0124ohm SVHC: Lead (25-Jun-2025) | auf Bestellung 1609 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6016LPS-13 | Diodes Incorporated | Description: MOSFET N-CHA 60V 10.6A POWERDI Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 37.1A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 37.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LPSQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V | auf Bestellung 6971 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LPSQ-13 | Diodes Zetex | Trans MOSFET N-CH 60V 9.8A Automotive 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6016LPSQ-13 | Diodes Incorporated | Description: MOSFET N-CHA 60V 10.6A POWERDI Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 37A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 2.6W (Ta), 37.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 16973 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LPSQ-13 | DIODES INC. | Description: DIODES INC. - DMTH6016LPSQ-13 - Leistungs-MOSFET, n-Kanal, 60 V, 9.8 A, 0.012 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 9.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N MSL: - Verlustleistung Pd: 2.6W Gate-Source-Schwellenspannung, max.: 2.5V Verlustleistung: 2.6W SVHC: Lead (25-Jun-2025) Bauform - Transistor: PowerDI 5060 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal usEccn: EAR99 Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.012ohm Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.012ohm | auf Bestellung 2460 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6016LPSQ-13 | Diodes Incorporated | Description: MOSFET N-CHA 60V 10.6A POWERDI Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 37A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 2.6W (Ta), 37.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LPSQ-13 | Diodes Zetex | Trans MOSFET N-CH 60V 9.8A Automotive 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6016LPSWQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V PowerDI5060-8 T&R 2.5K | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LSD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 7.6A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6016LSD-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V | auf Bestellung 51267 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LSD-13 | Diodes Zetex | Trans MOSFET N-CH 60V 7.6A 8-Pin SO T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6016LSD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 7.6A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 890 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LSDQ-13 | Diodes Zetex | Trans MOSFET N-CH 60V 7.6A Automotive 8-Pin SO T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6016LSDQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 7.6A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W, 1.9W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LSDQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 7.6A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W, 1.9W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 6011 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LSDQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V | auf Bestellung 4969 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6030LFDFW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V U-DFN2020-6/SWP T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6030LFDFW-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V U-DFN2020-6/SWP T&R 3K | auf Bestellung 955 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6030LFDFWQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V U-DFN2020-6/SWP T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6030LFDFWQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V U-DFN2020-6/SWP T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH61M5SPSW-13 | Diodes Incorporated | Description: MOSFET BVDSS: 41V~60V POWERDI506 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 225A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V Power Dissipation (Max): 3.2W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (SWP) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V | auf Bestellung 34876 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH61M5SPSW-13 | Diodes Incorporated | Description: MOSFET BVDSS: 41V~60V POWERDI506 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 225A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V Power Dissipation (Max): 3.2W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (SWP) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V | auf Bestellung 32500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH61M5SPSW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V~60V PowerDI5060-8 T&R 2.5K | auf Bestellung 2260 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH61M5SPSWQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V PowerDI5060-8 T&R 2.5K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH61M5SPSWQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 41V~60V POWERDI506 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: PowerDI5060-8 (SWP) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.2W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 225A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH61M8LPS-13 | DIODES INC. | Description: DIODES INC. - DMTH61M8LPS-13 - Leistungs-MOSFET, n-Kanal, 60 V, 225 A, 1200 µohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 225A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: - usEccn: EAR99 Verlustleistung Pd: 3.2W Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 3.2W Bauform - Transistor: PowerDI 5060 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0012ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 1200µohm SVHC: Lead (25-Jun-2025) | auf Bestellung 580 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH61M8LPS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V PowerDI5060-8 T&R 2.5K | auf Bestellung 1633 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH61M8LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 225A PWRDI Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 225A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH61M8LPS-13 | DIODES INC. | Description: DIODES INC. - DMTH61M8LPS-13 - Leistungs-MOSFET, n-Kanal, 60 V, 225 A, 1200 µohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 225A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: - Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 3.2W SVHC: Lead (25-Jun-2025) Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 1200µohm | auf Bestellung 160 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH61M8LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 225A PWRDI Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 225A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V | auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH61M8LPSQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 41V~60V POWERDI506 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 225A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH61M8LPSQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 41V~60V POWERDI506 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: PowerDI5060-8 (Type K) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 225A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH61M8LPSQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V PowerDI5060-8 T&R 2.5K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH61M8SPS-13 | DIODES INC. | Description: DIODES INC. - DMTH61M8SPS-13 - Leistungs-MOSFET, n-Kanal, 60 V, 215 A, 1100 µohm, PowerDI5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 215A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 167W Bauform - Transistor: PowerDI5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 1100µohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1058 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH61M8SPS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V PowerDI5060-8 T&R 2.5K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH61M8SPS-13 | Diodes Incorporated | Description: MOSFET BVDSS: 41V~60V POWERDI506 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 215A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V Power Dissipation (Max): 3.2W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH61M8SPS-13 | DIODES INC. | Description: DIODES INC. - DMTH61M8SPS-13 - Leistungs-MOSFET, n-Kanal, 60 V, 215 A, 1100 µohm, PowerDI5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 215A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 4V Verlustleistung: 167W SVHC: Lead (25-Jun-2025) Bauform - Transistor: PowerDI5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 1100µohm | auf Bestellung 1011 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH61M8SPSQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 41V~60V POWERDI506 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: PowerDI5060-8 (Type K) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.2W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 215A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH61M8SPSQ-13 | DIODES INC. | Description: DIODES INC. - DMTH61M8SPSQ-13 - Leistungs-MOSFET, n-Kanal, 60 V, 215 A, 0.0011 ohm, PowerDI5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 215A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 167W Bauform - Transistor: PowerDI5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0011ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 7000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH61M8SPSQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 41V~60V POWERDI506 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 215A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V Power Dissipation (Max): 3.2W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH61M8SPSQ-13 | DIODES INC. | Description: DIODES INC. - DMTH61M8SPSQ-13 - Leistungs-MOSFET, n-Kanal, 60 V, 215 A, 1100 µohm, PowerDI5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 215A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: - Gate-Source-Schwellenspannung, max.: 4V Verlustleistung: 167W SVHC: No SVHC (27-Jun-2024) Bauform - Transistor: PowerDI5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 1100µohm | auf Bestellung 6995 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH61M8SPSQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V PowerDI5060-8 T&R 2.5K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH62M7SPSW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V~60V PowerDI5060-8/SWP T&R 2.5K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH62M8LPS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH62M8LPS-13 | Diodes Zetex | Trans MOSFET N-CH 60V 100A 8-Pin PowerDI EP T/R | auf Bestellung 47500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH62M8LPS-13 | Diodes Zetex | Trans MOSFET N-CH 60V 100A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH62M8LPS-13 | Diodes Zetex | Trans MOSFET N-CH 60V 100A 8-Pin PowerDI EP T/R | auf Bestellung 32500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH62M8LPS-13 | Diodes Zetex | Trans MOSFET N-CH 60V 100A 8-Pin PowerDI EP T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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