Produkte > RN1
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| RN1703JE(TE85L,F) | Toshiba | Digital Transistors ESV PLN (LF) TRANSISTOR Pd=200mW F=1MHz | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1704,LF | Toshiba Semiconductor and Storage | Description: NPNX2 BRT Q1BSR47KOHM Q1BER47KOH Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: USV | auf Bestellung 210 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1704,LF | Toshiba | Digital Transistors NPN x 2 BRT, Q1BSR=47kOhm, Q1BER=47kOhm, Q2BSR=47kOhm, Q2BER=47kOhm, VCEO=50V, IC=0.1A | auf Bestellung 2089 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1704,LF | Toshiba Semiconductor and Storage | Description: NPNX2 BRT Q1BSR47KOHM Q1BER47KOH Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: USV | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN1704JE | TOSHIBA | 01+ TO23 | auf Bestellung 4102 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN1704JE(TE85L,F) | Toshiba | Digital Transistors ESV PLN (LF) TRANSISTOR Pd=200mW F=1MHz | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN1704JE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.1W ESV Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: ESV Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA | auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN1704JE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.1W ESV Part Status: Active Supplier Device Package: ESV Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN1705 | auf Bestellung 1900 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| RN1705,LF | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS 2NPN 50V 100MA USV Supplier Device Package: USV Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Tape & Reel (TR) | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1705,LF | Toshiba | Digital Transistors NPN x 2 BRT, Q1BSR=2.2kOhm, Q1BER=47kOhm, Q2BSR=2.2kOhm, Q2BER=47kOhm, VCEO=50V, IC=0.1A | auf Bestellung 16056 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1705,LF | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS 2NPN 50V 100MA USV Supplier Device Package: USV Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) | auf Bestellung 8083 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1705/XE | TOSHIBA | 09+ | auf Bestellung 18018 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN1705JE(TE85L,F) | Toshiba | Digital Transistors ESV PLN (LF) TRANSISTOR Pd=200mW F=1MHz | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN1705JE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.1W ESV | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN1705JE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.1W ESV | auf Bestellung 775 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1705\XE | TOSHIBA | SOT-353 | auf Bestellung 18100 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN1706 | TOSHIBA | SOT23-5 | auf Bestellung 1600 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN1706(TE85L) | auf Bestellung 291 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| RN1706,LF | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS 2NPN 50V 100MA USV Power - Max: 200mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: USV Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA | auf Bestellung 8094 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1706,LF | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS 2NPN 50V 100MA USV Part Status: Active Supplier Device Package: USV Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Tape & Reel (TR) | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1706,LF | Toshiba | Digital Transistors NPN x 2 BRT, Q1BSR=4.7kOhm, Q1BER=47kOhm, Q2BSR=4.7kOhm, Q2BER=47kOhm, VCEO=50V, IC=0.1A | auf Bestellung 8540 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1706,LF(T | TOSHIBA | Description: TOSHIBA - RN1706,LF(T - Bipolarer Transistor, pre-biased/digital, NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage euEccn: NLR rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 80hFE hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - Basis-Eingangswiderstand R1: 4.7kohm isCanonical: N Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 47kohm Verlustleistung: 200mW SVHC: To Be Advised Bauform - Transistor: SOT-353 Dauerkollektorstrom: 100mA Anzahl der Pins: 5 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN usEccn: EAR99 Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - | auf Bestellung 33972 Stücke: Lieferzeit 14-21 Tag (e) |
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| RN1706,LF(T | TOSHIBA | Description: TOSHIBA - RN1706,LF(T - Bipolarer Transistor, pre-biased/digital, NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage euEccn: NLR rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 80hFE hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - Basis-Eingangswiderstand R1: 4.7kohm isCanonical: Y Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 47kohm Verlustleistung: 200mW SVHC: To Be Advised Bauform - Transistor: SOT-353 Dauerkollektorstrom: 100mA Anzahl der Pins: 5 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN usEccn: EAR99 Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - | auf Bestellung 33972 Stücke: Lieferzeit 14-21 Tag (e) |
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| RN1706JE(TE85L,F) | Toshiba | Digital Transistors Gen Trans NPN x 2 ESV, 50V, 100A | auf Bestellung 3195 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1706JE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.1W ESV Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: ESV Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN1707 | auf Bestellung 1556 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| RN1707,LF | Toshiba | Digital Transistors NPN x 2 BRT, Q1BSR=10kOhm, Q1BER=47kOhm, Q2BSR=10kOhm, Q2BER=47kOhm, VCEO=50V, IC=0.1A | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1707,LF | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS 2NPN 50V 100MA USV Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: USV | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1707,LF | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS 2NPN 50V 100MA USV Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: USV | auf Bestellung 8441 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1707,LF(T | TOSHIBA | Description: TOSHIBA - RN1707,LF(T - Bipolarer Transistor, pre-biased/digital, NPN, 50 V, 100 mA, 10 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 80hFE hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-353 Anzahl der Pins: 5 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: To Be Advised | auf Bestellung 2412 Stücke: Lieferzeit 14-21 Tag (e) |
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| RN1707,LF(T | TOSHIBA | Description: TOSHIBA - RN1707,LF(T - Bipolarer Transistor, pre-biased/digital, NPN, 50 V, 100 mA, 10 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 80hFE hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 100mA usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-353 Anzahl der Pins: 5 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: To Be Advised | auf Bestellung 2412 Stücke: Lieferzeit 14-21 Tag (e) |
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| RN1707JE | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| RN1707JE(TE85L | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| RN1707JE(TE85L,F) | Toshiba Semiconductor and Storage | Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=4 Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ESV Part Status: Active | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1707JE(TE85L,F) | Toshiba Semiconductor and Storage | Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=4 Packaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ESV Part Status: Active | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1707JE(TE85L,F) | Toshiba | Digital Transistors NPN x 2 BRT SOT-553 50V | auf Bestellung 3098 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1707JE-T | auf Bestellung 60000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| RN1708 | TOSHIBA | auf Bestellung 2990 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| RN1708,LF | Toshiba Semiconductor and Storage | Description: NPNX2 BRT Q1BSR22KOHM Q1BER47KOH Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: USV | auf Bestellung 2753 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1708,LF | Toshiba | Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=22kOhm, Q1BER=47kOhm, Q2BSR=22kOhm, Q2BER=47kOhm, VCEO=50V, IC=0.1A | auf Bestellung 7658 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1708,LF | Toshiba Semiconductor and Storage | Description: NPNX2 BRT Q1BSR22KOHM Q1BER47KOH Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: USV | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN1708JE(TE85L,F) | Toshiba Semiconductor and Storage | Description: NPN X 2 BRT Q1BSR=22KOHM Q1BER=4 Part Status: Active Supplier Device Package: ESV Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Cut Tape (CT) | auf Bestellung 3890 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1708JE(TE85L,F) | Toshiba Semiconductor and Storage | Description: NPN X 2 BRT Q1BSR=22KOHM Q1BER=4 Supplier Device Package: ESV Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Tape & Reel (TR) Part Status: Active | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN1708JE(TE85L,F) | Toshiba | Digital Transistors NPN x 2 BRT SOT-553 50V | Produkt ist nicht verfügbar | Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN1709,LF | Toshiba Semiconductor and Storage | Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOH Supplier Device Package: USV Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Tape & Reel (TR) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1709,LF | Toshiba | Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=47kOhm, Q1BER=22kOhm, Q2BSR=47kOhm, Q2BER=22kOhm, VCEO=50V, IC=0.1A | auf Bestellung 8899 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1709,LF | Toshiba Semiconductor and Storage | Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOH Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) Supplier Device Package: USV Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1709JE | TOSHIBA | 09+ | auf Bestellung 5618 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN1709JE(TE85L,F) | Toshiba | Digital Transistors NPN x 2 BRT SOT-553 50V | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN1709JE(TE85L,F) | Toshiba Semiconductor and Storage | Description: NPN X 2 BRT Q1BSR=47KOHM Q1BER=2 Part Status: Active Supplier Device Package: ESV Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN1709JE(TE85L,F) | Toshiba Semiconductor and Storage | Description: NPN X 2 BRT Q1BSR=47KOHM Q1BER=2 Part Status: Active Supplier Device Package: ESV Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Cut Tape (CT) | auf Bestellung 3773 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN171-I/RM | Microchip | 49 MODULE 27X18X3.ULP WI-FI 802.11 B/G SURFACE MOUNT MODULE WITH RF PAD FOR Anzahl je Verpackung: 48 Stücke | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN171-I/RM | Microchip Technology | Description: RF TXRX MODULE WIFI SMD DigiKey Programmable: Not Verified Part Status: Active Serial Interfaces: SDIO, SPI, UART Operating Temperature: -40°C ~ 85°C Memory Size: 2MB ROM, 128kB RAM Frequency: 2.4GHz Mounting Type: Surface Mount Sensitivity: -83dBm Package / Case: Module Packaging: Tray RF Family/Standard: WiFi Modulation: CCK, DBPSK, DQPSK, DSSS, OFDM Antenna Type: Antenna Not Included Current - Transmitting: 120mA ~ 190mA Current - Receiving: 40mA Protocol: 802.11b/g Data Rate: 54Mbps Power - Output: 12dBm Voltage - Supply: 3V ~ 3.7V | auf Bestellung 135 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN171-I/RM | Microchip Technology | WiFi Modules - 802.11 WiFly GSX 802.11b/g Mod, Industrial Temp | auf Bestellung 164 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN171-I/RM | MICROCHIP | Description: MICROCHIP - RN171-I/RM - WLAN-Modul, 802.11 b/g, 2.4GHz, Drop-in-WiFi-Lösung, boardinterner TCP/IP-Stack tariffCode: 85369010 productTraceability: Yes-Date/Lot Code Modulanwendungsbereiche: Drahtlose Verbindungen rohsCompliant: YES euEccn: NLR Modulschnittstelle: SPI, UART hazardous: false rohsPhthalatesCompliant: YES HF-Frequenz: 2.48MHz usEccn: 5A002.a.1 Produktpalette: - SVHC: No SVHC (17-Jan-2023) | auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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| RN171-I/RM | Microchip | Модуль WiFi / 802.11 b/g, SPI, UART, SMD, Int Ant, 27*18*3.1mm, -40...+85C Бездротові модулі та аксесуари для частоти 2,4ГГц | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN171-I/RM245 | Microchip Technology | Microchip Technology | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN171-I/RM475 | Microchip Technology | WiFi Modules - 802.11 ULP WiFi 802.11 Module w RF Pad | auf Bestellung 71 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN171-I/RM475 | Microchip Technology | Description: RF TXRX MOD WIFI SURFACE MOUNT Packaging: Tray Package / Case: Module Sensitivity: -83dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 2MB ROM, 128kB RAM Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.7V Power - Output: 12dBm Data Rate: 54Mbps Protocol: 802.11b/g Current - Receiving: 40mA Current - Transmitting: 120mA ~ 190mA Antenna Type: Antenna Not Included Modulation: CCK, DBPSK, DQPSK, DSSS, OFDM RF Family/Standard: WiFi Serial Interfaces: SDIO, SPI, UART Part Status: Active | auf Bestellung 49 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN171-I/RM480 | Microchip Technology | WiFi Modules (802.11) ULP WI-Fi 802.11 b/g surface mount module with RF pad for routing to ext antenna | auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN171-I/RM481 | Microchip Technology | Description: RF TXRX MOD WIFI SURFACE MOUNT Packaging: Tray Package / Case: 49-SMD Module Sensitivity: -83dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 2MB ROM, 128kB RAM Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Power - Output: 12dBm Data Rate: 54Mbps Protocol: 802.11b/g Current - Receiving: 40mA Current - Transmitting: 120mA Antenna Type: Antenna Not Included Modulation: CCK, DBPSK, DQPSK, DSSS, OFDM RF Family/Standard: WiFi Serial Interfaces: SPI, UART Part Status: Active DigiKey Programmable: Not Verified | auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN171-IRM481 | Microchip Technology | WiFi Modules (802.11) ULP WI-Fi 802.11 bg surface mount module | auf Bestellung 37 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN1710 | Toshiba | Toshiba | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN1710,LF | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS 2NPN 50V 100MA USV Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: USV | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1710,LF | Toshiba | Digital Transistors NPN x 2 BRT, Q1BSR=4.7kOhm, Q1BER=Inf.kOhm, Q2BSR=4.7kOhm, Q2BER=Inf.kOhm, VCEO=50V, IC=0.1A | auf Bestellung 8788 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1710,LF | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS 2NPN 50V 100MA USV Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: USV | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1710JE(TE85L,F) | Toshiba Semiconductor and Storage | Description: NPN X 2 BRT Q1BSR=4.7KOHM Q1BER= Packaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: ESV | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN1710JE(TE85L,F) | Toshiba | Digital Transistors NPN x 2 BRT SOT-553 50V | Produkt ist nicht verfügbar | Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN1710JE(TE85L,F) | Toshiba Semiconductor and Storage | Description: NPN X 2 BRT Q1BSR=4.7KOHM Q1BER= Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: ESV | auf Bestellung 3863 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1711 | TOSHIBA | 00+ SOT-23-5 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN1711,LF | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS 2NPN 50V 100MA USV Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Supplier Device Package: USV | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1711,LF | Toshiba | Digital Transistors NPN x 2 BRT, Q1BSR=10kOhm, Q1BER=Inf.kOhm, Q2BSR=10kOhm, Q2BER=Inf.kOhm, VCEO=50V, IC=0.1A | auf Bestellung 4199 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1711,LF | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS 2NPN 50V 100MA USV Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Supplier Device Package: USV | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1711JE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANSISTOR NPN X2 BRT Q1BSR10KOH Part Status: Active Supplier Device Package: ESV Resistor - Base (R1): 10kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Cut Tape (CT) | auf Bestellung 3880 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1711JE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANSISTOR NPN X2 BRT Q1BSR10KOH Part Status: Active Supplier Device Package: ESV Resistor - Base (R1): 10kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN1711JE(TE85L,F) | Toshiba | Digital Transistors TRANS-SS NPN SOT323 50V | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN171XVC-I/RM | Microchip Technology | Description: MODULE 802.11B/G 2.4GHZ | Produkt ist nicht verfügbar | Mindestbestellmenge: 21 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN171XVS-I/RM | Microchip Technology | Module 802.11b/g 2.48GHz 11000Kbps 49-Pin SMD Module Bag | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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| RN171XVS-I/RM | MICROCHIP | Description: MICROCHIP - RN171XVS-I/RM - WLAN-Modul, 802.11 b/g, boardinterner TCP/IP-Stack, verpolungssicherer SMA-Steckverbinder tariffCode: 85176200 productTraceability: No Modulanwendungsbereiche: Drahtlose Verbindungen rohsCompliant: NO euEccn: NLR Modulschnittstelle: UART hazardous: false rohsPhthalatesCompliant: NO HF-Frequenz: 2.48MHz usEccn: 5A992.c Produktpalette: - SVHC: No SVHC (21-Jan-2025) | auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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| RN171XVS-I/RM | Microchip Technology | Description: RF TXRX MODULE WIFIRPSMA SMD Packaging: Bag Package / Case: 49-SMD Module Sensitivity: -83dBm Mounting Type: Surface Mount Frequency: 2.4GHz Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.7V Power - Output: 12dBm Data Rate: 54Mbps Protocol: 802.11b/g Current - Receiving: 40mA Current - Transmitting: 180mA Antenna Type: Antenna Not Included, RP-SMA Modulation: CCK, DBPSK, DQPSK, DSSS, OFDM RF Family/Standard: WiFi Serial Interfaces: UART Part Status: Active DigiKey Programmable: Not Verified | auf Bestellung 113 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN171XVS-I/RM | Microchip Technology | Multiprotocol Modules WIFI MOD FOR EXISTNG 802.15.4 W/ SMA ANT | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN171XVS-I/RM | Microchip Technology | Module 802.11b/g 2.48GHz 11000Kbps 49-Pin SMD Module Bag | Produkt ist nicht verfügbar | Mindestbestellmenge: 16 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN171XVU-I/RM | Microchip Technology | Description: RF TXRX MODULE WIFI U.FL SMD Packaging: Bag Package / Case: 49-SMD Module Sensitivity: -83dBm Mounting Type: Surface Mount Frequency: 2.4GHz Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.7V Power - Output: 12dBm Data Rate: 54Mbps Protocol: 802.11b/g Current - Receiving: 40mA Current - Transmitting: 180mA Antenna Type: Antenna Not Included, U.FL Modulation: CCK, DBPSK, DQPSK, DSSS, OFDM RF Family/Standard: WiFi Serial Interfaces: UART Part Status: Active DigiKey Programmable: Not Verified | auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN171XVU-I/RM | Microchip Technology | Antennas WIFI MOD FOR EXISTNG 802.15.4 W/ UFL ANT | auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN171XVW-I/RM | Microchip | 20 MODULE 33X24X2MLP WIFI MODULE W/WIRE ANT GIVES WIFI CONNECTIVITY FOR 802 RN171 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN171XVW-I/RM | Microchip Technology | Description: RF TXRX MOD WIFI WIR ANT SMD Packaging: Bag Package / Case: 49-SMD Module Sensitivity: -83dBm Mounting Type: Surface Mount Frequency: 2.4GHz Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.7V Power - Output: 12dBm Data Rate: 54Mbps Protocol: 802.11b/g Current - Receiving: 40mA Current - Transmitting: 180mA Antenna Type: Integrated, Wire Antenna Modulation: CCK, DBPSK, DQPSK, DSSS, OFDM RF Family/Standard: WiFi Serial Interfaces: UART Part Status: Active DigiKey Programmable: Not Verified | auf Bestellung 596 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN171XVW-I/RM | Microchip Technology | Antennas WIFI MOD FOR EXISTNG 802.15.4 w/ Wire Ant | auf Bestellung 134 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN171XVW-I/RM | MICROCHIP | Description: MICROCHIP - RN171XVW-I/RM - WLAN-Modul, 802.11 b/g, boardinterner TCP/IP-Stack, Drahtantenne tariffCode: 85369010 euEccn: NLR rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Modulschnittstelle: UART isCanonical: Y Konformitätsstandard: CE, FCC, IC SVHC: No SVHC (04-Feb-2026) Modulanwendungsbereiche: Drahtlose Verbindungen Produktpalette: - productTraceability: Yes-Date/Lot Code HF-Frequenz: 2.48MHz usEccn: 5A992.c Sendeleistung: 12dBm | auf Bestellung 51 Stücke: Lieferzeit 14-21 Tag (e) |
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| RN1723-I/RM100 | Microchip Technology | Description: RF TXRX MODULE WIFI SMD Packaging: Tray Package / Case: 49-SMD Module Sensitivity: -83dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 2MB ROM, 128kB RAM Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Power - Output: 12dBm Data Rate: 54Mbps Protocol: 802.11b/g Current - Receiving: 40mA Current - Transmitting: 120mA ~ 190mA Antenna Type: Antenna Not Included Modulation: CCK, DBPSK, DQPSK, DSSS, OFDM RF Family/Standard: WiFi Serial Interfaces: SPI, UART Part Status: Active DigiKey Programmable: Not Verified | auf Bestellung 863 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1723-I/RM100 | Microchip Technology | WiFi Modules - 802.11 802.11 Wi-Fi Module w/RF Pad for ext Ant | auf Bestellung 37 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN174C-I/RM | Microchip Technology | Description: MODULE GSX BOARD FOR RN-171 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN174P-I/RM | Microchip Technology | Description: MODULE GSX BOARD FOR RN-171 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN174U-I/RM | Microchip Technology | Description: MODULE GSX BOARD FOR RN-171 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN174W-I/RM | Microchip Technology | Description: MODULE GSX BOARD FOR RN-171 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN1810-I/RM100 | Microchip Technology | Module 802.11b/g/n 2.472GHz 54000Kbps 37-Pin Tray | Produkt ist nicht verfügbar | Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN1810-I/RM100 | Microchip Technology | Description: RX TXRX MOD WIFI TRACE ANT SMD | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN1810-I/RM100 | Microchip Technology | Module 802.11b/g/n 2.472GHz 54000Kbps 37-Pin Tray | auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN1810-I/RM100 | Microchip Technology | WiFi Modules - 802.11 WiFi 802.11n Radio WiFly o UART PCB ant | auf Bestellung 172 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RN1810-I/RM110 | Microchip Technology | Module 802.11b/g/n 2.472GHz 54000Kbps 37-Pin Tray | auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
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