Produkte > DMN
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| DMN3300U-7 | Diodes Zetex | Trans MOSFET N-CH 30V 2A 3-Pin SOT-23 T/R | auf Bestellung 210000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3300U-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 193 pF @ 10 V | auf Bestellung 4833 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3300U-7 | Diodes Zetex | Trans MOSFET N-CH 30V 2A 3-Pin SOT-23 T/R | auf Bestellung 210000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3300U-7 | Diodes Zetex | Trans MOSFET N-CH 30V 2A 3-Pin SOT-23 T/R | auf Bestellung 1415 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3300U-7 | Diodes Zetex | Trans MOSFET N-CH 30V 2A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3300U-7 | Diodes Zetex | Trans MOSFET N-CH 30V 2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3300U-7 | DIODES INC. | Description: DIODES INC. - DMN3300U-7 - Leistungs-MOSFET, n-Kanal, 30 V, 1.5 A, 0.1 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 1.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 700mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.1ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1685 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3300U-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 2A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 193 pF @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3300U-7 | Diodes Zetex | Trans MOSFET N-CH 30V 2A 3-Pin SOT-23 T/R | auf Bestellung 903000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3300U-7 | Diodes Zetex | Trans MOSFET N-CH 30V 2A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3300U-7 | Diodes Zetex | Trans MOSFET N-CH 30V 2A 3-Pin SOT-23 T/R | auf Bestellung 1415 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3300U-7 | DIODES INC. | Description: DIODES INC. - DMN3300U-7 - Leistungs-MOSFET, n-Kanal, 30 V, 1.5 A, 0.1 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 1.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 700mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.1ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1685 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3300U-7 | Diodes Incorporated | MOSFETs 600mW 30Vdss | auf Bestellung 2024 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3300U-7-52 | Diodes Zetex | 1.0W Surface Mount Zener Diode | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3300UQ-7 | Diodes Zetex | N-Channel Enhancement Mode MOSFET Automotive AEC-Q101 | auf Bestellung 153000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3300UQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT23 T&R Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 4.5V Power Dissipation (Max): 700mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 193 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 158545 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3300UQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V SOT23 T&R 3K | auf Bestellung 5486 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3300UQ-7 | Diodes Zetex | N-Channel Enhancement Mode MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3300UQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT23 T&R Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 4.5V Power Dissipation (Max): 700mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 193 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 156000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3300UQ-7-52 | Diodes Zetex | N-Channel Enhancement Mode MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN33D8LDW-13 | Diodes Incorporated | MOSFETs 33V Dual N-Ch Enh 30Vgss 250mA 0.35W | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN33D8LDW-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 0.25A | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN33D8LDW-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 0.25A SOT363 Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Current - Continuous Drain (Id) @ 25°C: 250mA Drain to Source Voltage (Vdss): 30V Power - Max: 350mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) | auf Bestellung 439045 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN33D8LDW-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 0.25A SOT363 Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Current - Continuous Drain (Id) @ 25°C: 250mA Drain to Source Voltage (Vdss): 30V Power - Max: 350mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) | auf Bestellung 435000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN33D8LDW-7 | Diodes Incorporated | MOSFETs 33V Dual N-Ch Enh 30Vgss 250mA 0.35W | auf Bestellung 5789 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN33D8LDWQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 0.25A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN33D8LT-13 | Diodes Zetex | Trans MOSFET N-CH 30V 0.115A 3-Pin SOT-523 T/R | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN33D8LT-13 | DIODES INC. | Description: DIODES INC. - DMN33D8LT-13 - Leistungs-MOSFET, n-Kanal, 30 V, 115 mA, 5 ohm, SOT-523, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 115mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Gate-Source-Schwellenspannung, max.: 1.5V Verlustleistung: 240mW SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-523 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 4V Drain-Source-Durchgangswiderstand: 5ohm | auf Bestellung 18630 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN33D8LT-13 | Diodes | MOSFET N-CH 30V 115MA SOT523 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN33D8LT-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 115MA SOT523 Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 10mA, 4V Power Dissipation (Max): 240mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 5 V | auf Bestellung 140000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN33D8LT-13 | Diodes Incorporated | MOSFETs 33V Single N-Ch Enh 20Vgss 115mA 240mW | auf Bestellung 42239 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN33D8LT-13 | Diodes Zetex | Trans MOSFET N-CH 30V 0.115A 3-Pin SOT-523 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN33D8LT-13 | DIODES INC. | Description: DIODES INC. - DMN33D8LT-13 - Leistungs-MOSFET, n-Kanal, 30 V, 115 mA, 5 ohm, SOT-523, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 115mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 1.5V Verlustleistung: 240mW SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-523 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 4V Drain-Source-Durchgangswiderstand: 5ohm | auf Bestellung 18630 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN33D8LT-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 115MA SOT523 Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 10mA, 4V Power Dissipation (Max): 240mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 5 V | auf Bestellung 144194 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN33D8LT-7 | DIODES INC. | Description: DIODES INC. - DMN33D8LT-7 - Leistungs-MOSFET, n-Kanal, 30 V, 115 mA, 5 ohm, SOT-523, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 115mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 240mW Bauform - Transistor: SOT-523 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 5ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2450 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN33D8LT-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 0.115A | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN33D8LT-7 | DIODES INC. | Description: DIODES INC. - DMN33D8LT-7 - Leistungs-MOSFET, n-Kanal, 30 V, 115 mA, 5 ohm, SOT-523, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 115mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 240mW Bauform - Transistor: SOT-523 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 5ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2450 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN33D8LT-7 | Diodes Incorporated | MOSFETs 33V Dual N-Ch Enh 20Vgss 115mA 240mW | auf Bestellung 6536 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN33D8LV-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 0.35A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 430mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SOT-563 | auf Bestellung 1077000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN33D8LV-7 | Diodes Incorporated | MOSFETs 2N7002 Family | auf Bestellung 2905 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN33D8LV-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 0.35A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 430mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SOT-563 | auf Bestellung 1077000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN33D8LVQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 0.35A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 430mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 160000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN33D8LVQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 0.35A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 430mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 169863 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN33D8LVQ-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 0.35A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 430mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 77940 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN33D8LVQ-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 0.35A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 430mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 75000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN33D9LV-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V 30V SOT563 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN33D9LV-13 | Diodes Zetex | Trans MOSFET N-CH 30V 0.35A 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN33D9LV-13 | Diodes Zetex | Trans MOSFET N-CH 30V 0.35A 6-Pin SOT-563 T/R | auf Bestellung 80000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN33D9LV-13A | Diodes Incorporated | Description: MOSFET 2N-CH 30V 0.35A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 430mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V Vgs(th) (Max) @ Id: 1.4V @ 100µA Supplier Device Package: SOT-563 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN33D9LV-13A | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V 30V SOT563 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN33D9LV-13A | Diodes Zetex | Trans MOSFET N-CH 30V 0.35A 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN33D9LV-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 0.35A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 430mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V Vgs(th) (Max) @ Id: 1.4V @ 100µA Supplier Device Package: SOT-563 | auf Bestellung 72000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN33D9LV-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V SOT563 T&R 3K | auf Bestellung 1511 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN33D9LV-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 0.35A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 430mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V Vgs(th) (Max) @ Id: 1.4V @ 100µA Supplier Device Package: SOT-563 | auf Bestellung 74960 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN33D9LV-7A | Diodes Incorporated | Description: MOSFET 2N-CH 30V 0.35A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 430mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V Vgs(th) (Max) @ Id: 1.4V @ 100µA Supplier Device Package: SOT-563 | auf Bestellung 62900 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN33D9LV-7A | DIODES INC. | Description: DIODES INC. - DMN33D9LV-7A - Dual-MOSFET, n-Kanal, 30 V, 30 V, 350 mA, 350 mA, 2.4 ohm tariffCode: 85412100 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 350mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 350mA Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 430mW Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-563 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 2.4ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 430mW Betriebstemperatur, max.: 150°C | auf Bestellung 1130 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN33D9LV-7A | Diodes Incorporated | Description: MOSFET 2N-CH 30V 0.35A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 430mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V Vgs(th) (Max) @ Id: 1.4V @ 100µA Supplier Device Package: SOT-563 | auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN33D9LV-7A | DIODES INC. | Description: DIODES INC. - DMN33D9LV-7A - Dual-MOSFET, n-Kanal, 30 V, 30 V, 350 mA, 350 mA, 2.4 ohm tariffCode: 85412100 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 350mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 350mA Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 430mW Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-563 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 2.4ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 430mW Betriebstemperatur, max.: 150°C | auf Bestellung 1130 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN33D9LV-7A | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V SOT563 T&R 3K | auf Bestellung 1976 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3401LDW-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 0.8A SOT363 Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 290mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.6V @ 250µA | auf Bestellung 27604 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3401LDW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3401LDW-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 0.8A SOT363 Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 290mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3401LDW-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | auf Bestellung 5393 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3401LDW-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 4A; 350mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.6A Pulsed drain current: 4A Power dissipation: 0.35W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 0.7Ω Mounting: SMD Gate charge: 1.2nC Kind of package: 7 inch reel; tape Kind of channel: enhancement | auf Bestellung 2899 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3401LDW-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 0.8A SOT363 Drain to Source Voltage (Vdss): 30V Power - Max: 290mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) | auf Bestellung 7520 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3401LDW-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 0.8A SOT363 Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 290mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3401LDWQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 0.8A SOT363 Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 290mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3401LDWQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V SOT363 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3401LDWQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V SOT363 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3401LDWQ-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 0.8A SOT363 Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 290mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) | auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3401LT-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT523 T&R Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Power Dissipation (Max): 390mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 200 pC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3401LV-13 | Diodes Incorporated | Diodes Inc. MOSFET BVDSS: 25V-30V SOT563 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3401LV-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V SOT563 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3401LVQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V SOT563 T&R 10K | auf Bestellung 19864 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3401LVQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 0.8A SOT563 Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 1.6V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 490mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) | auf Bestellung 56778 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3401LVQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 0.8A SOT563 Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 1.6V @ 100µA Drain to Source Voltage (Vdss): 30V Power - Max: 490mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) | auf Bestellung 50000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3401LVQ-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 0.8A SOT563 Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 1.6V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 490mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) | auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3401LVQ-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 0.8A SOT563 Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 1.6V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 490mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) | auf Bestellung 29975 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3401LVQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V SOT563 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3404 | DIODES | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| DMN3404L | Diodes Incorporated | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3404L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R | auf Bestellung 1040 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 208 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3404L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 5.8A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 5.8A, 10V Power Dissipation (Max): 720mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 15 V | auf Bestellung 1800 Stücke: Lieferzeit 10-14 Tag (e) | Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3404L-7 | DIODES INC. | Description: DIODES INC. - DMN3404L-7 - Leistungs-MOSFET, n-Kanal, 30 V, 4.2 A, 0.028 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 4.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 1.4W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.028ohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 24237 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3404L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3404L-7 | Diodes | MOSFET N-CH 30V 5.8A SOT-23 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3404L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3404L-7 | DIODES/ZETEX | N-MOSFET 30V 5.8A 28mΩ 720mW DMN3404L-7 Diodes TDMN3404l Anzahl je Verpackung: 100 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN3404L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R | auf Bestellung 1168 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 208 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3404L-7 | DIODES INC. | Description: DIODES INC. - DMN3404L-7 - Leistungs-MOSFET, n-Kanal, 30 V, 4.2 A, 0.028 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 4.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 1.4W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.028ohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 24237 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3404L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R | auf Bestellung 177000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3404L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 5.8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 5.8A, 10V Power Dissipation (Max): 720mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 15 V | auf Bestellung 2494 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3404L-7 | Diodes Incorporated | MOSFETs N-CHANNEL ENHANCEMENT MODE | auf Bestellung 195779 Stücke: Lieferzeit 290-294 Tag (e) |
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| DMN3404L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3404L-7 | DIODES/ZETEX | N-MOSFET 30V 5.8A 28mΩ 720mW DMN3404L-7 Diodes TDMN3404l Anzahl je Verpackung: 100 Stücke | auf Bestellung 760 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN3404L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3404L-7-50 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT23 T&R Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 5.8A, 10V Power Dissipation (Max): 720mW Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3404L-7-50 | Diodes Zetex | Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3404LQ-7 | Diodes Zetex | Trans MOSFET N-CH 30V 5.8A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3404LQ-7 | Diodes Zetex | Trans MOSFET N-CH 30V 5.8A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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