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SDS005RC&KSwitch Detector N.C. SPST Plunger J-Bend 0.1A 12VDC SMD T/R
auf Bestellung 2994 Stücke:
Lieferzeit 14-21 Tag (e)
51+3.44 EUR
100+2.9 EUR
500+2.09 EUR
Mindestbestellmenge: 51 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SDS005RC&KSwitch Detector N.C. SPST Plunger J-Bend 0.1A 12VDC SMD T/R
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SDS005RC&KSwitch Detector N.C. SPST Plunger J-Bend 0.1A 12VDC SMD T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+1.9 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SDS005RC&KSwitch Detector N.C. SPST Plunger J-Bend 0.1A 12VDC SMD T/R
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+1.14 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SDS005RULCC&K COMPONENTSDescription: C&K COMPONENTS - SDS005RULC - Erkennungsschalter, Seitliche Betätigung, SDS Series, SPST-NC, Lötanschluss, 10 µA, 1.8 V, 2 mm
tariffCode: 85365011
rohsCompliant: YES
Schalteranschlüsse: Lötanschluss
hazardous: false
rohsPhthalatesCompliant: YES
Kontaktstrom, max.: 10µA
usEccn: EAR99
Außentiefe: 5.7mm
Außenbreite: 5mm
euEccn: NLR
DC-Kontaktspannung, nom.: 1.8V
Außenhöhe: 2mm
Produktpalette: SDS Series
productTraceability: No
Kontaktkonfiguration: SPST-NC
SVHC: No SVHC (15-Jan-2018)
auf Bestellung 5820 Stücke:
Lieferzeit 14-21 Tag (e)
91+2.75 EUR
94+2.49 EUR
96+2.25 EUR
99+2.19 EUR
106+2.02 EUR
Mindestbestellmenge: 91 Stücke
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SDS005RULCC&KDetector Switches SWITCH DETECT
auf Bestellung 2378 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.45 EUR
10+2.32 EUR
50+2.26 EUR
100+1.39 EUR
1000+1.27 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SDS01-12D05WP-DUKE Technology, Inc.Description: DC DC CONVERTER +/-5V 1W
Features: Adjustable Output, Remote On/Off
Packaging: Tube
Package / Case: 7-SMD Module, 6 Leads
Size / Dimension: 0.52" L x 0.36" W x 0.40" H (13.2mm x 9.1mm x 10.2mm)
Mounting Type: Surface Mount
Type: Isolated Module
Operating Temperature: -40°C ~ 105°C (With Derating)
Applications: ITE (Commercial)
Voltage - Input (Max): 18V
Approval Agency: CE
Efficiency: 77%
Current - Output (Max): 100mA, 100mA
Voltage - Input (Min): 4.5V
Voltage - Output 1: 5V
Voltage - Output 2: -5V
Part Status: Active
Power (Watts): 1 W
Number of Outputs: 2
Voltage - Isolation: 1.6 kV
Standard Number: 62368-1
Produkt ist nicht verfügbar
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SDS01-12D12WP-DUKE Technology, Inc.Description: DC DC CONVERTER +/-12V 1.1W
Features: Adjustable Output, Remote On/Off
Packaging: Tube
Package / Case: 7-SMD Module, 6 Leads
Size / Dimension: 0.52" L x 0.36" W x 0.40" H (13.2mm x 9.1mm x 10.2mm)
Mounting Type: Surface Mount
Type: Isolated Module
Operating Temperature: -40°C ~ 105°C (With Derating)
Applications: ITE (Commercial)
Voltage - Input (Max): 18V
Approval Agency: CE
Efficiency: 80%
Current - Output (Max): 45mA, 45mA
Voltage - Input (Min): 4.5V
Voltage - Output 1: 12V
Voltage - Output 2: -12V
Part Status: Active
Power (Watts): 1.1 W
Number of Outputs: 2
Voltage - Isolation: 1.6 kV
Standard Number: 62368-1
Produkt ist nicht verfügbar
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SDS01-12D15WP-DUKE Technology, Inc.Description: DC DC CONVERTER +/-15V 1.1W
Features: Adjustable Output, Remote On/Off
Packaging: Tube
Package / Case: 7-SMD Module, 6 Leads
Size / Dimension: 0.52" L x 0.36" W x 0.40" H (13.2mm x 9.1mm x 10.2mm)
Mounting Type: Surface Mount
Type: Isolated Module
Operating Temperature: -40°C ~ 105°C (With Derating)
Applications: ITE (Commercial)
Voltage - Input (Max): 18V
Approval Agency: CE
Efficiency: 81%
Current - Output (Max): 35mA, 35mA
Voltage - Input (Min): 4.5V
Voltage - Output 1: 15V
Voltage - Output 2: -15V
Part Status: Active
Power (Watts): 1.1 W
Number of Outputs: 2
Voltage - Isolation: 1.6 kV
Standard Number: 62368-1
Produkt ist nicht verfügbar
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SDS01-12S05WP-DUKE Technology, Inc.Description: DC DC CONVERTER 5V 1W
Features: Adjustable Output, Remote On/Off
Packaging: Tube
Package / Case: 7-SMD Module, 6 Leads
Size / Dimension: 0.52" L x 0.36" W x 0.40" H (13.2mm x 9.1mm x 10.2mm)
Mounting Type: Surface Mount
Type: Isolated Module
Operating Temperature: -40°C ~ 105°C (With Derating)
Applications: ITE (Commercial)
Voltage - Input (Max): 18V
Approval Agency: CE
Efficiency: 79%
Current - Output (Max): 200mA
Voltage - Input (Min): 4.5V
Voltage - Output 1: 5V
Part Status: Active
Power (Watts): 1 W
Number of Outputs: 1
Voltage - Isolation: 1.6 kV
Standard Number: 62368-1
Produkt ist nicht verfügbar
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SDS01-12S09WP-DUKE Technology, Inc.Description: DC DC CONVERTER 9V 1W
Features: Adjustable Output, Remote On/Off
Packaging: Tube
Package / Case: 7-SMD Module, 6 Leads
Size / Dimension: 0.52" L x 0.36" W x 0.40" H (13.2mm x 9.1mm x 10.2mm)
Mounting Type: Surface Mount
Type: Isolated Module
Operating Temperature: -40°C ~ 105°C (With Derating)
Applications: ITE (Commercial)
Voltage - Input (Max): 18V
Approval Agency: CE
Efficiency: 79%
Current - Output (Max): 112mA
Voltage - Input (Min): 4.5V
Voltage - Output 1: 9V
Part Status: Active
Power (Watts): 1 W
Number of Outputs: 1
Voltage - Isolation: 1.6 kV
Standard Number: 62368-1
Produkt ist nicht verfügbar
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SDS01-12S12WP-DUKE Technology, Inc.Description: DC DC CONVERTER 12V 1.1W
Features: Adjustable Output, Remote On/Off
Packaging: Tube
Package / Case: 7-SMD Module, 6 Leads
Size / Dimension: 0.52" L x 0.36" W x 0.40" H (13.2mm x 9.1mm x 10.2mm)
Mounting Type: Surface Mount
Type: Isolated Module
Operating Temperature: -40°C ~ 105°C (With Derating)
Applications: ITE (Commercial)
Voltage - Input (Max): 18V
Approval Agency: CE
Efficiency: 81%
Current - Output (Max): 90mA
Voltage - Input (Min): 4.5V
Voltage - Output 1: 12V
Part Status: Active
Power (Watts): 1.1 W
Number of Outputs: 1
Voltage - Isolation: 1.6 kV
Standard Number: 62368-1
Produkt ist nicht verfügbar
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SDS01-12S15WP-DUKE Technology, Inc.Description: DC DC CONVERTER 15V 1.1W
Features: Adjustable Output, Remote On/Off
Packaging: Tube
Package / Case: 7-SMD Module, 6 Leads
Size / Dimension: 0.52" L x 0.36" W x 0.40" H (13.2mm x 9.1mm x 10.2mm)
Mounting Type: Surface Mount
Type: Isolated Module
Operating Temperature: -40°C ~ 105°C (With Derating)
Applications: ITE (Commercial)
Voltage - Input (Max): 18V
Approval Agency: CE
Efficiency: 81%
Current - Output (Max): 70mA
Voltage - Input (Min): 4.5V
Voltage - Output 1: 15V
Part Status: Active
Power (Watts): 1.1 W
Number of Outputs: 1
Voltage - Isolation: 1.6 kV
Standard Number: 62368-1
Produkt ist nicht verfügbar
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SDS01-12S24WP-DUKE Technology, Inc.Description: DC DC CONVERTER 24V 1.1W
Features: Adjustable Output, Remote On/Off
Packaging: Tube
Package / Case: 7-SMD Module, 6 Leads
Size / Dimension: 0.52" L x 0.36" W x 0.40" H (13.2mm x 9.1mm x 10.2mm)
Mounting Type: Surface Mount
Type: Isolated Module
Operating Temperature: -40°C ~ 105°C (With Derating)
Applications: ITE (Commercial)
Voltage - Input (Max): 18V
Approval Agency: CE
Efficiency: 80%
Current - Output (Max): 45mA
Voltage - Input (Min): 4.5V
Voltage - Output 1: 24V
Part Status: Active
Power (Watts): 1.1 W
Number of Outputs: 1
Voltage - Isolation: 1.6 kV
Standard Number: 62368-1
Produkt ist nicht verfügbar
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SDS01-12S3P3WP-DUKE Technology, Inc.Description: DC DC CONVERTER 3.3V 1W
Features: Adjustable Output, Remote On/Off
Packaging: Tube
Package / Case: 7-SMD Module, 6 Leads
Size / Dimension: 0.52" L x 0.36" W x 0.40" H (13.2mm x 9.1mm x 10.2mm)
Mounting Type: Surface Mount
Type: Isolated Module
Operating Temperature: -40°C ~ 105°C (With Derating)
Applications: ITE (Commercial)
Voltage - Input (Max): 18V
Approval Agency: CE
Efficiency: 77%
Current - Output (Max): 300mA
Voltage - Input (Min): 4.5V
Voltage - Output 1: 3.3V
Part Status: Active
Power (Watts): 1 W
Number of Outputs: 1
Voltage - Isolation: 1.6 kV
Standard Number: 62368-1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SDS01-24D12WP-DUKE Technology, Inc.Description: DC DC CONVERTER +/-12V 1.1W
Features: Adjustable Output, Remote On/Off
Packaging: Tube
Package / Case: 7-SMD Module, 6 Leads
Size / Dimension: 0.52" L x 0.36" W x 0.40" H (13.2mm x 9.1mm x 10.2mm)
Mounting Type: Surface Mount
Type: Isolated Module
Operating Temperature: -40°C ~ 105°C (With Derating)
Applications: ITE (Commercial)
Voltage - Input (Max): 36V
Approval Agency: CE
Efficiency: 80%
Current - Output (Max): 45mA, 45mA
Voltage - Input (Min): 9V
Voltage - Output 1: 12V
Voltage - Output 2: -12V
Power (Watts): 1.1 W
Number of Outputs: 2
Voltage - Isolation: 1.6 kV
Standard Number: 62368-1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SDS01-24D15WP-DUKE Technology, Inc.Description: DC DC CONVERTER +/-15V 1.1W
Features: Adjustable Output, Remote On/Off
Packaging: Tube
Package / Case: 7-SMD Module, 6 Leads
Size / Dimension: 0.52" L x 0.36" W x 0.40" H (13.2mm x 9.1mm x 10.2mm)
Mounting Type: Surface Mount
Type: Isolated Module
Operating Temperature: -40°C ~ 105°C (With Derating)
Applications: ITE (Commercial)
Voltage - Input (Max): 36V
Approval Agency: CE
Efficiency: 81%
Current - Output (Max): 35mA, 35mA
Voltage - Input (Min): 9V
Voltage - Output 1: 15V
Voltage - Output 2: -15V
Power (Watts): 1.1 W
Number of Outputs: 2
Voltage - Isolation: 1.6 kV
Standard Number: 62368-1
Produkt ist nicht verfügbar
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SDS02-24S12WP-DUKE Technology, Inc.Description: ISOLATED / 2W/ VOUT:12
Produkt ist nicht verfügbar
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SDS02-48D15WP-DUKE Technology, Inc.Description: DC DC CONVERTER +/-15V 2W
Standard Number: 62368-1
Voltage - Isolation: 1.6 kV
Number of Outputs: 2
Power (Watts): 2 W
Part Status: Active
Voltage - Output 2: -15V
Voltage - Output 1: 15V
Voltage - Input (Min): 18V
Current - Output (Max): 67mA, 67mA
Efficiency: 82%
Approval Agency: CE
Voltage - Input (Max): 75V
Applications: ITE (Commercial)
Operating Temperature: -40°C ~ 105°C (With Derating)
Type: Isolated Module
Mounting Type: Surface Mount
Size / Dimension: 0.52" L x 0.36" W x 0.40" H (13.2mm x 9.1mm x 10.2mm)
Package / Case: 7-SMD Module, 6 Leads
Features: Adjustable Output, Remote On/Off
Packaging: Tube
Produkt ist nicht verfügbar
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SDS03-24S24WP-DUKE Technology, Inc.Description: DC DC CONVERTER 24V 3W
Voltage - Isolation: 1.6 kV
Number of Outputs: 1
Power (Watts): 3 W
Part Status: Active
Voltage - Output 1: 24V
Voltage - Input (Min): 9V
Current - Output (Max): 125mA
Efficiency: 82%
Approval Agency: CE
Voltage - Input (Max): 36V
Standard Number: 62368-1
Applications: ITE (Commercial)
Operating Temperature: -40°C ~ 105°C (With Derating)
Type: Isolated Module
Mounting Type: Surface Mount
Size / Dimension: 0.52" L x 0.36" W x 0.40" H (13.2mm x 9.1mm x 10.2mm)
Packaging: Tube
Package / Case: 7-SMD Module, 6 Leads
Features: Adjustable Output, Remote On/Off
Produkt ist nicht verfügbar
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SDS05-05S05P-DUKE Technology, Inc.Description: DC DC CONVERTER 5V 5W
Features: Adjustable Output, Remote On/Off
Packaging: Tube
Package / Case: 7-SMD Module, 6 Leads
Size / Dimension: 0.52" L x 0.36" W x 0.40" H (13.2mm x 9.1mm x 10.2mm)
Mounting Type: Surface Mount
Type: Isolated Module
Operating Temperature: -40°C ~ 105°C (With Derating)
Applications: ITE (Commercial)
Voltage - Input (Max): 13.2V
Approval Agency: CE
Efficiency: 80%
Current - Output (Max): 1A
Voltage - Input (Min): 4.5V
Voltage - Output 1: 5V
Power (Watts): 5 W
Number of Outputs: 1
Voltage - Isolation: 1.6 kV
Standard Number: 62368-1
Produkt ist nicht verfügbar
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SDS05-12S12P-DUKE Technology, Inc.Description: ISOLATED / 5W/ VOUT:12
Produkt ist nicht verfügbar
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SDS05-12S15P-DUKE Technology, Inc.Description: ISOLATED / 5W/ VOUT:15
Produkt ist nicht verfügbar
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SDS05-12S3P3P-DUKE Technology, Inc.Description: DC DC CONVERTER 3.3V 3.3W
Voltage - Output 1: 3.3V
Voltage - Input (Min): 9V
Current - Output (Max): 1A
Efficiency: 76%
Approval Agency: CE
Voltage - Input (Max): 18V
Applications: ITE (Commercial)
Operating Temperature: -40°C ~ 105°C (With Derating)
Type: Isolated Module
Mounting Type: Surface Mount
Size / Dimension: 0.52" L x 0.36" W x 0.40" H (13.2mm x 9.1mm x 10.2mm)
Package / Case: 7-SMD Module, 6 Leads
Features: Adjustable Output, Remote On/Off
Packaging: Tube
Standard Number: 62368-1
Voltage - Isolation: 1.6 kV
Number of Outputs: 1
Power (Watts): 3.3 W
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SDS05-24D05P-DUKE Technology, Inc.Description: DC DC CONVERTER +/-5V 5W
Part Status: Active
Voltage - Output 2: -5V
Voltage - Output 1: 5V
Voltage - Input (Min): 18V
Current - Output (Max): 500mA, 500mA
Efficiency: 82%
Approval Agency: CE
Voltage - Input (Max): 36V
Applications: ITE (Commercial)
Operating Temperature: -40°C ~ 105°C (With Derating)
Type: Isolated Module
Mounting Type: Surface Mount
Standard Number: 62368-1
Voltage - Isolation: 1.6 kV
Number of Outputs: 2
Power (Watts): 5 W
Size / Dimension: 0.52" L x 0.36" W x 0.40" H (13.2mm x 9.1mm x 10.2mm)
Package / Case: 7-SMD Module, 6 Leads
Features: Adjustable Output, Remote On/Off
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SDS0604-220M
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J002D3Luminus Devices Inc.Description: DIODE 650V-2A TO252-2L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 113pF @ 0V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 8 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J002D3Luminus Devices Inc.Description: DIODE 650V-2A TO252-2L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 113pF @ 0V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 8 µA @ 650 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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SDS065J002D3-ISARHSanan Power SemiconductorDescription: DIODE SIL CARB 650V 9A TO2522L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 113pF @ 0V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 8 µA @ 650 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J002D3-ISARHSanan SemiconductorSiC Schottky Diodes 650V 2A, TO252-2L, Industrial Grade
auf Bestellung 279 Stücke:
Lieferzeit 10-14 Tag (e)
2+3.03 EUR
10+1.95 EUR
100+1.29 EUR
500+1.01 EUR
1000+0.92 EUR
2500+0.83 EUR
5000+0.77 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J002D3-ISARHSanan Power SemiconductorDescription: DIODE SIL CARB 650V 9A TO2522L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 113pF @ 0V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 8 µA @ 650 V
auf Bestellung 2477 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.09 EUR
11+1.96 EUR
100+1.31 EUR
500+1.04 EUR
1000+0.94 EUR
Mindestbestellmenge: 7 Stücke
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SDS065J004C3Luminus Devices Inc.Description: DIODE 650V-4A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 213pF @ 0V, 1MHz
Current - Average Rectified (Io): 14A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 12 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J004C3-ISATHSanan SemiconductorSiC Schottky Diodes 650V 4A, TO220-2L, Industrial Grade
auf Bestellung 298 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.38 EUR
10+2.34 EUR
100+1.98 EUR
500+1.64 EUR
1000+1.37 EUR
2500+1.33 EUR
5000+1.3 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J004C3-ISATHSanan Power SemiconductorDescription: DIODE SIL CARB 650V 14A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 213pF @ 0V, 1MHz
Current - Average Rectified (Io): 14A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 12 µA @ 650 V
auf Bestellung 199 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.88 EUR
50+2.37 EUR
100+2.13 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J004D3Luminus Devices Inc.Description: DIODE 650V-4A TO252-2L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 213pF @ 0V, 1MHz
Current - Average Rectified (Io): 14A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 12 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J004D3Luminus Devices Inc.Description: DIODE 650V-4A TO252-2L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 213pF @ 0V, 1MHz
Current - Average Rectified (Io): 14A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 12 µA @ 650 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J004D3-ISARHLuminus Devices Inc.Description: DIODE SIL CARB 650V 14A TO2522L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 213pF @ 0V, 1MHz
Current - Average Rectified (Io): 14A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 12 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.88 EUR
10+2.48 EUR
100+1.68 EUR
500+1.33 EUR
1000+1.27 EUR
Mindestbestellmenge: 6 Stücke
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SDS065J004D3-ISARHLuminus Devices Inc.Description: DIODE SIL CARB 650V 14A TO2522L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 213pF @ 0V, 1MHz
Current - Average Rectified (Io): 14A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 12 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.27 EUR
Mindestbestellmenge: 2500 Stücke
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SDS065J004D3-ISARHSanan SemiconductorSiC Schottky Diodes 650V 4A, TO252-2L, Industrial Grade
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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SDS065J004D4-CSARHSanan Semiconductor 650V 4A, TO252-2L, Industrial Grade
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J006C3Luminus Devices Inc.Description: DIODE 650V-6A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J006C3-ISATHSanan Power SemiconductorDescription: DIODE SIL CARB 650V 20A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.71 EUR
50+2.81 EUR
100+2.52 EUR
Mindestbestellmenge: 4 Stücke
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SDS065J006D3-ISARHLuminus Devices Inc.Description: DIODE SIL CARB 650V 20A TO2522L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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SDS065J006D3-ISARHLuminus Devices Inc.Description: DIODE SIL CARB 650V 20A TO2522L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.71 EUR
10+3.03 EUR
100+2.08 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J006D3-ISARHSanan SemiconductorSiC Schottky Diodes 650V 6A, TO252-2L, Industrial Grade
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J006E3Luminus Devices Inc.Description: DIODE 650V-6A TO263-2L
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J006E3-ISARHSanan Power SemiconductorDescription: DIODE SIL CARB 650V 20A TO2632L
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.32 EUR
10+3.44 EUR
100+2.36 EUR
Mindestbestellmenge: 4 Stücke
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SDS065J006E3-ISARHSanan SemiconductorSiC Schottky Diodes 650V 6A, TO263-2L, Industrial Grade
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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SDS065J006E3-ISARHSanan Power SemiconductorDescription: DIODE SIL CARB 650V 20A TO2632L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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SDS065J006S3Luminus Devices Inc.Description: DIODE 650V-6A DFN88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 18 µA @ 650 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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SDS065J006S3Luminus Devices Inc.Description: DIODE 650V-6A DFN88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 18 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J006S3-ISBRHSanan SemiconductorSiC Schottky Diodes Diode 650V-6A DFN8*8-4L
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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SDS065J006S3-ISBRHSanan Power SemiconductorDescription: DIODE SIL CARBIDE 650V 23A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 18 µA @ 650 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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SDS065J006S3-ISBRHSanan Power SemiconductorDescription: DIODE SIL CARBIDE 650V 23A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 18 µA @ 650 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.82 EUR
10+3.76 EUR
100+2.59 EUR
Mindestbestellmenge: 4 Stücke
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SDS065J008C3Luminus Devices Inc.Description: DIODE 650V-8A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 24 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J008C3-ISATHSanan Power SemiconductorDescription: DIODE SIL CARB 650V 25A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 24 µA @ 650 V
auf Bestellung 195 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.62 EUR
50+3.3 EUR
100+2.98 EUR
Mindestbestellmenge: 4 Stücke
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SDS065J008C3-ISATHSanan SemiconductorSiC Schottky Diodes 650V 8A, TO220-2L, Industrial Grade
auf Bestellung 188 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.24 EUR
10+3.25 EUR
100+2.78 EUR
500+2.28 EUR
1000+2 EUR
2500+1.96 EUR
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SDS065J008D3-ISARHSanan Power SemiconductorDescription: DIODE SIL CARB 650V 8A TO2522L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 24 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.87 EUR
10+3.81 EUR
100+2.63 EUR
500+2.13 EUR
1000+2.02 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J008D3-ISARHSanan SemiconductorSiC Schottky Diodes 650V 8A, TO252-2L, Industrial Grade
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J008D3-ISARHSanan Power SemiconductorDescription: DIODE SIL CARB 650V 8A TO2522L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 24 µA @ 650 V
auf Bestellung 2500 Stücke:
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2500+1.94 EUR
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SDS065J008D4-CSARHSanan Semiconductor 650V 8A, TO252-2L, Industrial Grade
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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SDS065J008N3-ISATHSanan Power SemiconductorDescription: DIODE SIL CARB 650V 20A TO220N2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220N-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 24 µA @ 650 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.06 EUR
50+3.53 EUR
100+3.19 EUR
Mindestbestellmenge: 3 Stücke
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SDS065J008S3Luminus Devices Inc.Description: DIODE 650V-8A DFN88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 24 µA @ 650 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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SDS065J008S3Luminus Devices Inc.Description: DIODE 650V-8A DFN88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 24 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J008S3-ISBRHSanan Power SemiconductorDescription: DIODE SIL CARBIDE 650V 29A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 24 µA @ 650 V
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.47 EUR
10+4.2 EUR
100+2.92 EUR
Mindestbestellmenge: 4 Stücke
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SDS065J008S3-ISBRHSanan Power SemiconductorDescription: DIODE SIL CARBIDE 650V 29A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 24 µA @ 650 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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SDS065J010C3Luminus Devices Inc.Description: DIODE 650V-10A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 556pF @ 0V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J010C3-ISATHSanan Power SemiconductorDescription: DIODE SIL CARB 650V 30A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 556pF @ 0V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 183 Stücke:
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3+7.63 EUR
50+3.83 EUR
100+3.47 EUR
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SDS065J010D3-ISARHSanan SemiconductorSiC Schottky Diodes 650V 10A, TO252-2L, Industrial Grade
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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SDS065J010D3-ISARHSanan Power SemiconductorDescription: DIODE SIL CARB 650V 29A TO2522L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 556pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 290 Stücke:
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4+6.81 EUR
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100+3.09 EUR
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SDS065J010D3-ISARHSanan Power SemiconductorDescription: DIODE SIL CARB 650V 29A TO2522L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 556pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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SDS065J010E3Luminus Devices Inc.Description: DIODE 650V-10A TO263-2L
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 556pF @ 0V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J010E3-ISARHSanan SemiconductorSiC Schottky Diodes 650V 10A, TO263-2L, Industrial Grade
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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SDS065J010E3-ISARHSanan Power SemiconductorDescription: DIODE SIL CARB 650V 30A TO2632L
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 556pF @ 0V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 290 Stücke:
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3+7.08 EUR
10+4.63 EUR
100+3.24 EUR
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SDS065J010E3-ISARHSanan Power SemiconductorDescription: DIODE SIL CARB 650V 30A TO2632L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 556pF @ 0V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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SDS065J010N3Luminus Devices Inc.Description: DIODE 650V-10A TO220N-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220N-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J010N3-ISATHSanan Power SemiconductorDescription: DIODE SIL CARB 650V 26A TO220N2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 556pF @ 0V, 1MHz
Current - Average Rectified (Io): 26A
Supplier Device Package: TO-220N-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 290 Stücke:
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3+8.1 EUR
50+4.11 EUR
100+3.71 EUR
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SDS065J010S3-ISBRHSanan Power SemiconductorDescription: DIODE 650V-10A DFN8*8-4L
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Current - Average Rectified (Io): 10A
Supplier Device Package: 4-DFN (8x8)
Voltage - DC Reverse (Vr) (Max): 650 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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SDS065J010S3-ISBRHSanan Power SemiconductorDescription: DIODE 650V-10A DFN8*8-4L
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Current - Average Rectified (Io): 10A
Supplier Device Package: 4-DFN (8x8)
Voltage - DC Reverse (Vr) (Max): 650 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.35 EUR
10+4.82 EUR
100+3.37 EUR
Mindestbestellmenge: 3 Stücke
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SDS065J010S3-ISBRHSanan SemiconductorSiC Schottky Diodes 650V 10A, DFN8*8-4L, Industrial Grade
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.22 EUR
10+4.74 EUR
100+3.31 EUR
500+2.73 EUR
1000+2.7 EUR
3000+2.53 EUR
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SDS065J012C3Luminus Devices Inc.Description: DIODE 650V-12A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 651pF @ 0V, 1MHz
Current - Average Rectified (Io): 37A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 36 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J012C3-ISATHSanan SemiconductorSiC Schottky Diodes 650V 12A, TO220-2L, Industrial Grade
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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SDS065J012C3-ISATHSanan Power SemiconductorDescription: DIODE SIL CARB 650V 37A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 651pF @ 0V, 1MHz
Current - Average Rectified (Io): 37A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 36 µA @ 650 V
auf Bestellung 76 Stücke:
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3+8.52 EUR
50+4.33 EUR
Mindestbestellmenge: 3 Stücke
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SDS065J012S3-ISARHSanan Power SemiconductorDescription: DIODE SIL CARBIDE 650V 44A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 651pF @ 0V, 1MHz
Current - Average Rectified (Io): 44A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 36 µA @ 650 V
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.27 EUR
10+5.45 EUR
100+3.84 EUR
Mindestbestellmenge: 3 Stücke
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SDS065J012S3-ISARHSanan Power SemiconductorDescription: DIODE SIL CARBIDE 650V 44A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 651pF @ 0V, 1MHz
Current - Average Rectified (Io): 44A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 36 µA @ 650 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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SDS065J016C3Luminus Devices Inc.Description: DIODE 650V-16A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 837pF @ 0V, 1MHz
Current - Average Rectified (Io): 44A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 48 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J016C3-ISATHSanan Power SemiconductorDescription: DIODE SIL CARB 650V 44A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 837pF @ 0V, 1MHz
Current - Average Rectified (Io): 44A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 48 µA @ 650 V
auf Bestellung 167 Stücke:
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3+10.06 EUR
50+5.19 EUR
100+4.72 EUR
Mindestbestellmenge: 3 Stücke
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SDS065J016C3-ISATHSanan SemiconductorSiC Schottky Diodes 650V 16A, TO220-2L, Industrial Grade
auf Bestellung 186 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.81 EUR
10+5.09 EUR
100+4.63 EUR
500+3.81 EUR
1000+3.45 EUR
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SDS065J016G3Luminus Devices Inc.Description: DIODE ARR SCHOTT 650V 25A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-247-3L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 24 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J016G3-ISATHSanan Power SemiconductorDescription: DIODE ARR SIC 650V 25A TO247-3L
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-247-3L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 24 µA @ 650 V
auf Bestellung 94 Stücke:
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2+10.72 EUR
30+5.99 EUR
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SDS065J016G3-ISATHSanan SemiconductorSiC Schottky Diodes 650V 16A, TO247-3L, Industrial Grade
auf Bestellung 187 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.52 EUR
10+5.89 EUR
120+5.18 EUR
510+4.06 EUR
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SDS065J016H3-ISATHSanan Power SemiconductorDescription: DIODE SIL CARB 650V 44A TO2472L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 837pF @ 0V, 1MHz
Current - Average Rectified (Io): 44A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 48 µA @ 650 V
auf Bestellung 165 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.94 EUR
30+6.12 EUR
120+5.06 EUR
Mindestbestellmenge: 2 Stücke
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SDS065J016H3-ISATHSanan SemiconductorSiC Schottky Diodes 650V 16A, TO247-2L, Industrial Grade
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.42 EUR
10+6.01 EUR
120+4.94 EUR
510+4.13 EUR
1020+3.88 EUR
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SDS065J020C3Luminus Devices Inc.Description: DIODE 650V-20A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1018pF @ 0V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J020C3-ISATHSanan Power SemiconductorDescription: DIODE SIL CARB 650V 51A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1018pF @ 0V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.79 EUR
50+4.03 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J020C3-ISATHSanan SemiconductorSiC Schottky Diodes 650V 20A, TO220-2L, Industrial Grade
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
1+11 EUR
10+5.87 EUR
100+5.46 EUR
500+4.41 EUR
1000+4.11 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J020D3-ISARHSanan SemiconductorSiC Schottky Diodes 650V 20A, TO252-2L, Industrial Grade
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.2 EUR
10+6.78 EUR
100+4.86 EUR
500+4.32 EUR
1000+4.14 EUR
2500+4.05 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J020D3-ISARHSanan Power SemiconductorDescription: DIODE SIL CARB 650V 51A TO2522L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1018pF @ 0V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 50 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 142 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.39 EUR
10+6.91 EUR
100+4.94 EUR
Mindestbestellmenge: 3 Stücke
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SDS065J020D3-ISARHSanan Power SemiconductorDescription: DIODE SIL CARB 650V 51A TO2522L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1018pF @ 0V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 50 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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SDS065J020G3Sanan SemiconductorDescription: DIODE 650V-20A TO247-3L
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3L
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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