Produkte > SDS
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| SDS005R | C&K | Category: Detect Switches Description: Switch: detecting; Pos: 2; SPST-NC; 0.1A/12VDC; Leads: for PCB; SDS Mounting: SMT Operating temperature: -40...85°C Leads: for PCB Type of switch: detecting Switching method: ON-(OFF) Kind of package: reel Contact plating: silver plated Contacts configuration: SPST-NC Body colour: white Terminal pitch: 4.2mm Body dimensions: 5.7x5mm Max. contact resistance:: 100mΩ DC contacts rating @R: 0.1A / 12V DC Stable positions number: 1 Number of positions: 2 Quantity in set/package: 3000pcs. Mechanical durability: 50000 cycles Min. insulation resistance: 10MΩ Manufacturer series: SDS Contact material: gold | auf Bestellung 2475 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS005R | C&K | Switch Detector N.C. SPST Plunger J-Bend 0.1A 12VDC SMD T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SDS005R | C&K | Switch Detector N.C. SPST Plunger J-Bend 0.1A 12VDC SMD T/R | auf Bestellung 2994 Stücke: Lieferzeit 14-21 Tag (e) |
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| SDS005R | C&K | Description: SWITCH DETECT SPST-NC 100MA 12V Packaging: Cut Tape (CT) Current Rating (Amps): 100mA (DC) Mounting Type: Surface Mount, Right Angle Circuit: SPST-NC Switch Function: On-Mom Operating Temperature: -40°C ~ 85°C Termination Style: SMD (SMT) Tab Actuator Type: Overtravel Plunger Operating Force: 75gf Mechanical Life: 50,000 Cycles Electrical Life: 50,000 Cycles Overtravel: 0.079" (2.0mm) Voltage Rating - DC: 12 V | auf Bestellung 2873 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS005R | C&K | Switch Detector N.C. SPST Plunger J-Bend 0.1A 12VDC SMD T/R | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS005R | C&K | Detector Switches WHITE SIDE ACTUATED DETECT SWITCH | auf Bestellung 2274 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS005RULC | C&K | Detector Switches SWITCH DETECT | auf Bestellung 3369 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS005RULC | C&K COMPONENTS | Description: C&K COMPONENTS - SDS005RULC - Erkennungsschalter, Seitliche Betätigung, SDS Series, SPST-NC, Lötanschluss, 10 µA, 1.8 V, 2 mm tariffCode: 85365011 euEccn: NLR rohsCompliant: YES Schalteranschlüsse: Lötanschluss hazardous: false rohsPhthalatesCompliant: YES Kontaktstrom, max.: 10µA isCanonical: Y Außentiefe: 5.7mm Außenbreite: 5mm SVHC: No SVHC (15-Jan-2018) DC-Kontaktspannung, nom.: 1.8V Außenhöhe: 2mm Produktpalette: SDS Series productTraceability: No usEccn: EAR99 Kontaktkonfiguration: SPST-NC | auf Bestellung 5534 Stücke: Lieferzeit 14-21 Tag (e) |
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| SDS01-12D05W | P-DUKE Technology, Inc. | Description: DC DC CONVERTER +/-5V 1W Features: Adjustable Output, Remote On/Off Packaging: Tube Package / Case: 7-SMD Module, 6 Leads Size / Dimension: 0.52" L x 0.36" W x 0.40" H (13.2mm x 9.1mm x 10.2mm) Mounting Type: Surface Mount Type: Isolated Module Operating Temperature: -40°C ~ 105°C (With Derating) Applications: ITE (Commercial) Voltage - Input (Max): 18V Approval Agency: CE Efficiency: 77% Current - Output (Max): 100mA, 100mA Voltage - Input (Min): 4.5V Voltage - Output 1: 5V Voltage - Output 2: -5V Part Status: Active Power (Watts): 1 W Number of Outputs: 2 Voltage - Isolation: 1.6 kV Standard Number: 62368-1 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS01-12D12W | P-DUKE Technology, Inc. | Description: DC DC CONVERTER +/-12V 1.1W Features: Adjustable Output, Remote On/Off Packaging: Tube Package / Case: 7-SMD Module, 6 Leads Size / Dimension: 0.52" L x 0.36" W x 0.40" H (13.2mm x 9.1mm x 10.2mm) Mounting Type: Surface Mount Type: Isolated Module Operating Temperature: -40°C ~ 105°C (With Derating) Applications: ITE (Commercial) Voltage - Input (Max): 18V Approval Agency: CE Efficiency: 80% Current - Output (Max): 45mA, 45mA Voltage - Input (Min): 4.5V Voltage - Output 1: 12V Voltage - Output 2: -12V Part Status: Active Power (Watts): 1.1 W Number of Outputs: 2 Voltage - Isolation: 1.6 kV Standard Number: 62368-1 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS01-12D15W | P-DUKE Technology, Inc. | Description: DC DC CONVERTER +/-15V 1.1W Features: Adjustable Output, Remote On/Off Packaging: Tube Package / Case: 7-SMD Module, 6 Leads Size / Dimension: 0.52" L x 0.36" W x 0.40" H (13.2mm x 9.1mm x 10.2mm) Mounting Type: Surface Mount Type: Isolated Module Operating Temperature: -40°C ~ 105°C (With Derating) Applications: ITE (Commercial) Voltage - Input (Max): 18V Approval Agency: CE Efficiency: 81% Current - Output (Max): 35mA, 35mA Voltage - Input (Min): 4.5V Voltage - Output 1: 15V Voltage - Output 2: -15V Part Status: Active Power (Watts): 1.1 W Number of Outputs: 2 Voltage - Isolation: 1.6 kV Standard Number: 62368-1 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS01-12S05W | P-DUKE Technology, Inc. | Description: DC DC CONVERTER 5V 1W Features: Adjustable Output, Remote On/Off Packaging: Tube Package / Case: 7-SMD Module, 6 Leads Size / Dimension: 0.52" L x 0.36" W x 0.40" H (13.2mm x 9.1mm x 10.2mm) Mounting Type: Surface Mount Type: Isolated Module Operating Temperature: -40°C ~ 105°C (With Derating) Applications: ITE (Commercial) Voltage - Input (Max): 18V Approval Agency: CE Efficiency: 79% Current - Output (Max): 200mA Voltage - Input (Min): 4.5V Voltage - Output 1: 5V Part Status: Active Power (Watts): 1 W Number of Outputs: 1 Voltage - Isolation: 1.6 kV Standard Number: 62368-1 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS01-12S09W | P-DUKE Technology, Inc. | Description: DC DC CONVERTER 9V 1W Features: Adjustable Output, Remote On/Off Packaging: Tube Package / Case: 7-SMD Module, 6 Leads Size / Dimension: 0.52" L x 0.36" W x 0.40" H (13.2mm x 9.1mm x 10.2mm) Mounting Type: Surface Mount Type: Isolated Module Operating Temperature: -40°C ~ 105°C (With Derating) Applications: ITE (Commercial) Voltage - Input (Max): 18V Approval Agency: CE Efficiency: 79% Current - Output (Max): 112mA Voltage - Input (Min): 4.5V Voltage - Output 1: 9V Part Status: Active Power (Watts): 1 W Number of Outputs: 1 Voltage - Isolation: 1.6 kV Standard Number: 62368-1 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS01-12S12W | P-DUKE Technology, Inc. | Description: DC DC CONVERTER 12V 1.1W Features: Adjustable Output, Remote On/Off Packaging: Tube Package / Case: 7-SMD Module, 6 Leads Size / Dimension: 0.52" L x 0.36" W x 0.40" H (13.2mm x 9.1mm x 10.2mm) Mounting Type: Surface Mount Type: Isolated Module Operating Temperature: -40°C ~ 105°C (With Derating) Applications: ITE (Commercial) Voltage - Input (Max): 18V Approval Agency: CE Efficiency: 81% Current - Output (Max): 90mA Voltage - Input (Min): 4.5V Voltage - Output 1: 12V Part Status: Active Power (Watts): 1.1 W Number of Outputs: 1 Voltage - Isolation: 1.6 kV Standard Number: 62368-1 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS01-12S15W | P-DUKE Technology, Inc. | Description: DC DC CONVERTER 15V 1.1W Features: Adjustable Output, Remote On/Off Packaging: Tube Package / Case: 7-SMD Module, 6 Leads Size / Dimension: 0.52" L x 0.36" W x 0.40" H (13.2mm x 9.1mm x 10.2mm) Mounting Type: Surface Mount Type: Isolated Module Operating Temperature: -40°C ~ 105°C (With Derating) Applications: ITE (Commercial) Voltage - Input (Max): 18V Approval Agency: CE Efficiency: 81% Current - Output (Max): 70mA Voltage - Input (Min): 4.5V Voltage - Output 1: 15V Part Status: Active Power (Watts): 1.1 W Number of Outputs: 1 Voltage - Isolation: 1.6 kV Standard Number: 62368-1 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS01-12S24W | P-DUKE Technology, Inc. | Description: DC DC CONVERTER 24V 1.1W Features: Adjustable Output, Remote On/Off Packaging: Tube Package / Case: 7-SMD Module, 6 Leads Size / Dimension: 0.52" L x 0.36" W x 0.40" H (13.2mm x 9.1mm x 10.2mm) Mounting Type: Surface Mount Type: Isolated Module Operating Temperature: -40°C ~ 105°C (With Derating) Applications: ITE (Commercial) Voltage - Input (Max): 18V Approval Agency: CE Efficiency: 80% Current - Output (Max): 45mA Voltage - Input (Min): 4.5V Voltage - Output 1: 24V Part Status: Active Power (Watts): 1.1 W Number of Outputs: 1 Voltage - Isolation: 1.6 kV Standard Number: 62368-1 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS01-12S3P3W | P-DUKE Technology, Inc. | Description: DC DC CONVERTER 3.3V 1W Features: Adjustable Output, Remote On/Off Packaging: Tube Package / Case: 7-SMD Module, 6 Leads Size / Dimension: 0.52" L x 0.36" W x 0.40" H (13.2mm x 9.1mm x 10.2mm) Mounting Type: Surface Mount Type: Isolated Module Operating Temperature: -40°C ~ 105°C (With Derating) Applications: ITE (Commercial) Voltage - Input (Max): 18V Approval Agency: CE Efficiency: 77% Current - Output (Max): 300mA Voltage - Input (Min): 4.5V Voltage - Output 1: 3.3V Part Status: Active Power (Watts): 1 W Number of Outputs: 1 Voltage - Isolation: 1.6 kV Standard Number: 62368-1 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS01-24D12W | P-DUKE Technology, Inc. | Description: DC DC CONVERTER +/-12V 1.1W Features: Adjustable Output, Remote On/Off Packaging: Tube Package / Case: 7-SMD Module, 6 Leads Size / Dimension: 0.52" L x 0.36" W x 0.40" H (13.2mm x 9.1mm x 10.2mm) Mounting Type: Surface Mount Type: Isolated Module Operating Temperature: -40°C ~ 105°C (With Derating) Applications: ITE (Commercial) Voltage - Input (Max): 36V Approval Agency: CE Efficiency: 80% Current - Output (Max): 45mA, 45mA Voltage - Input (Min): 9V Voltage - Output 1: 12V Voltage - Output 2: -12V Power (Watts): 1.1 W Number of Outputs: 2 Voltage - Isolation: 1.6 kV Standard Number: 62368-1 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS01-24D15W | P-DUKE Technology, Inc. | Description: DC DC CONVERTER +/-15V 1.1W Features: Adjustable Output, Remote On/Off Packaging: Tube Package / Case: 7-SMD Module, 6 Leads Size / Dimension: 0.52" L x 0.36" W x 0.40" H (13.2mm x 9.1mm x 10.2mm) Mounting Type: Surface Mount Type: Isolated Module Operating Temperature: -40°C ~ 105°C (With Derating) Applications: ITE (Commercial) Voltage - Input (Max): 36V Approval Agency: CE Efficiency: 81% Current - Output (Max): 35mA, 35mA Voltage - Input (Min): 9V Voltage - Output 1: 15V Voltage - Output 2: -15V Power (Watts): 1.1 W Number of Outputs: 2 Voltage - Isolation: 1.6 kV Standard Number: 62368-1 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS02-24S12W | P-DUKE Technology, Inc. | Description: ISOLATED / 2W/ VOUT:12 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS02-48D15W | P-DUKE Technology, Inc. | Description: DC DC CONVERTER +/-15V 2W Features: Adjustable Output, Remote On/Off Packaging: Tube Package / Case: 7-SMD Module, 6 Leads Size / Dimension: 0.52" L x 0.36" W x 0.40" H (13.2mm x 9.1mm x 10.2mm) Mounting Type: Surface Mount Type: Isolated Module Operating Temperature: -40°C ~ 105°C (With Derating) Applications: ITE (Commercial) Voltage - Input (Max): 75V Approval Agency: CE Efficiency: 82% Current - Output (Max): 67mA, 67mA Voltage - Input (Min): 18V Voltage - Output 1: 15V Voltage - Output 2: -15V Part Status: Active Power (Watts): 2 W Number of Outputs: 2 Voltage - Isolation: 1.6 kV Standard Number: 62368-1 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS03-24S24W | P-DUKE Technology, Inc. | Description: DC DC CONVERTER 24V 3W Features: Adjustable Output, Remote On/Off Packaging: Tube Package / Case: 7-SMD Module, 6 Leads Size / Dimension: 0.52" L x 0.36" W x 0.40" H (13.2mm x 9.1mm x 10.2mm) Mounting Type: Surface Mount Type: Isolated Module Operating Temperature: -40°C ~ 105°C (With Derating) Applications: ITE (Commercial) Voltage - Input (Max): 36V Approval Agency: CE Efficiency: 82% Current - Output (Max): 125mA Voltage - Input (Min): 9V Voltage - Output 1: 24V Part Status: Active Power (Watts): 3 W Number of Outputs: 1 Voltage - Isolation: 1.6 kV Standard Number: 62368-1 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS05-05S05 | P-DUKE Technology, Inc. | Description: DC DC CONVERTER 5V 5W Features: Adjustable Output, Remote On/Off Packaging: Tube Package / Case: 7-SMD Module, 6 Leads Size / Dimension: 0.52" L x 0.36" W x 0.40" H (13.2mm x 9.1mm x 10.2mm) Mounting Type: Surface Mount Type: Isolated Module Operating Temperature: -40°C ~ 105°C (With Derating) Applications: ITE (Commercial) Voltage - Input (Max): 13.2V Approval Agency: CE Efficiency: 80% Current - Output (Max): 1A Voltage - Input (Min): 4.5V Voltage - Output 1: 5V Power (Watts): 5 W Number of Outputs: 1 Voltage - Isolation: 1.6 kV Standard Number: 62368-1 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS05-12S12 | P-DUKE Technology, Inc. | Description: ISOLATED / 5W/ VOUT:12 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS05-12S15 | P-DUKE Technology, Inc. | Description: ISOLATED / 5W/ VOUT:15 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS05-12S3P3 | P-DUKE Technology, Inc. | Description: DC DC CONVERTER 3.3V 3.3W Features: Adjustable Output, Remote On/Off Packaging: Tube Package / Case: 7-SMD Module, 6 Leads Size / Dimension: 0.52" L x 0.36" W x 0.40" H (13.2mm x 9.1mm x 10.2mm) Mounting Type: Surface Mount Type: Isolated Module Operating Temperature: -40°C ~ 105°C (With Derating) Applications: ITE (Commercial) Voltage - Input (Max): 18V Approval Agency: CE Efficiency: 76% Current - Output (Max): 1A Voltage - Input (Min): 9V Voltage - Output 1: 3.3V Part Status: Active Power (Watts): 3.3 W Number of Outputs: 1 Voltage - Isolation: 1.6 kV Standard Number: 62368-1 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS05-24D05 | P-DUKE Technology, Inc. | Description: DC DC CONVERTER +/-5V 5W Features: Adjustable Output, Remote On/Off Packaging: Tube Package / Case: 7-SMD Module, 6 Leads Size / Dimension: 0.52" L x 0.36" W x 0.40" H (13.2mm x 9.1mm x 10.2mm) Mounting Type: Surface Mount Type: Isolated Module Operating Temperature: -40°C ~ 105°C (With Derating) Applications: ITE (Commercial) Voltage - Input (Max): 36V Approval Agency: CE Efficiency: 82% Current - Output (Max): 500mA, 500mA Voltage - Input (Min): 18V Voltage - Output 1: 5V Voltage - Output 2: -5V Part Status: Active Power (Watts): 5 W Number of Outputs: 2 Voltage - Isolation: 1.6 kV Standard Number: 62368-1 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS0604-220M | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| SDS065J002D3 | Luminus Devices Inc. | Description: DIODE 650V-2A TO252-2L Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 113pF @ 0V, 1MHz Current - Average Rectified (Io): 9A Supplier Device Package: TO-252-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A Current - Reverse Leakage @ Vr: 8 µA @ 650 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J002D3 | Luminus Devices Inc. | Description: DIODE 650V-2A TO252-2L Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 113pF @ 0V, 1MHz Current - Average Rectified (Io): 9A Supplier Device Package: TO-252-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A Current - Reverse Leakage @ Vr: 8 µA @ 650 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J002D3-ISARH | Sanan Semiconductor | SiC Schottky Diodes 650V 2A, TO252-2L, Industrial Grade | auf Bestellung 279 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J002D3-ISARH | Sanan Power Semiconductor | Description: DIODE SIL CARB 650V 9A TO252-2L Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 113pF @ 0V, 1MHz Current - Average Rectified (Io): 9A Supplier Device Package: TO-252-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A Current - Reverse Leakage @ Vr: 8 µA @ 650 V | auf Bestellung 2477 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J002D3-ISARH | Sanan Power Semiconductor | Description: DIODE SIL CARB 650V 9A TO252-2L Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 113pF @ 0V, 1MHz Current - Average Rectified (Io): 9A Supplier Device Package: TO-252-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A Current - Reverse Leakage @ Vr: 8 µA @ 650 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J004C3 | Luminus Devices Inc. | Description: DIODE 650V-4A TO220-2L Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 213pF @ 0V, 1MHz Current - Average Rectified (Io): 14A Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 12 µA @ 650 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J004C3-ISATH | Sanan Semiconductor | SiC Schottky Diodes 650V 4A, TO220-2L, Industrial Grade | auf Bestellung 288 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J004C3-ISATH | Sanan Power Semiconductor | Description: DIODE SIL CARB 650V 14A TO220L Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 213pF @ 0V, 1MHz Current - Average Rectified (Io): 14A Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 12 µA @ 650 V | auf Bestellung 194 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J004D3 | Luminus Devices Inc. | Description: DIODE 650V-4A TO252-2L Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 213pF @ 0V, 1MHz Current - Average Rectified (Io): 14A Supplier Device Package: TO-252-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 12 µA @ 650 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J004D3 | Luminus Devices Inc. | Description: DIODE 650V-4A TO252-2L Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 213pF @ 0V, 1MHz Current - Average Rectified (Io): 14A Supplier Device Package: TO-252-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 12 µA @ 650 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J004D3-ISARH | Luminus Devices Inc. | Description: DIODE SIL CARB 650V 14A TO2522L Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 213pF @ 0V, 1MHz Current - Average Rectified (Io): 14A Supplier Device Package: TO-252-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 12 µA @ 650 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J004D3-ISARH | Sanan Semiconductor | SiC Schottky Diodes 650V 4A, TO252-2L, Industrial Grade | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J004D3-ISARH | Luminus Devices Inc. | Description: DIODE SIL CARB 650V 14A TO2522L Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 213pF @ 0V, 1MHz Current - Average Rectified (Io): 14A Supplier Device Package: TO-252-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 12 µA @ 650 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J004D4-CSARH | Sanan Semiconductor | 650V 4A, TO252-2L, Industrial Grade | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J006C3 | Luminus Devices Inc. | Description: DIODE 650V-6A TO220-2L Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 310pF @ 0V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J006C3-ISATH | Sanan Power Semiconductor | Description: DIODE SIL CARB 650V 20A TO220L Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 310pF @ 0V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V | auf Bestellung 190 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J006D3-ISARH | Sanan Semiconductor | SiC Schottky Diodes 650V 6A, TO252-2L, Industrial Grade | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J006D3-ISARH | Luminus Devices Inc. | Description: DIODE SIL CARB 650V 20A TO2522L Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 310pF @ 0V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-252-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V | auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J006D3-ISARH | Luminus Devices Inc. | Description: DIODE SIL CARB 650V 20A TO2522L Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 310pF @ 0V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-252-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J006E3 | Luminus Devices Inc. | Description: DIODE 650V-6A TO263-2L Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 310pF @ 0V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-263-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J006E3-ISARH | Sanan Semiconductor | SiC Schottky Diodes 650V 6A, TO263-2L, Industrial Grade | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J006E3-ISARH | Sanan Power Semiconductor | Description: DIODE SIL CARB 650V 20A TO263-2L Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 310pF @ 0V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-263-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V | auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J006E3-ISARH | Sanan Power Semiconductor | Description: DIODE SIL CARB 650V 20A TO263-2L Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 310pF @ 0V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-263-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J006S3 | Luminus Devices Inc. | Description: DIODE 650V-6A DFN88 Packaging: Cut Tape (CT) Package / Case: 4-PowerVSFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 310pF @ 0V, 1MHz Current - Average Rectified (Io): 23A Supplier Device Package: 4-DFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 18 µA @ 650 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J006S3 | Luminus Devices Inc. | Description: DIODE 650V-6A DFN88 Packaging: Tape & Reel (TR) Package / Case: 4-PowerVSFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 310pF @ 0V, 1MHz Current - Average Rectified (Io): 23A Supplier Device Package: 4-DFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 18 µA @ 650 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J006S3-ISBRH | Sanan Power Semiconductor | Description: DIODE SIL CARBIDE 650V 23A 4DFN Packaging: Tape & Reel (TR) Package / Case: 4-PowerVSFN Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 310pF @ 0V, 1MHz Current - Average Rectified (Io): 23A Supplier Device Package: 4-DFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 18 µA @ 650 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J006S3-ISBRH | Sanan Semiconductor | SiC Schottky Diodes Diode 650V-6A DFN8*8-4L | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J006S3-ISBRH | Sanan Power Semiconductor | Description: DIODE SIL CARBIDE 650V 23A 4DFN Packaging: Cut Tape (CT) Package / Case: 4-PowerVSFN Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 310pF @ 0V, 1MHz Current - Average Rectified (Io): 23A Supplier Device Package: 4-DFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 18 µA @ 650 V | auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J008C3 | Luminus Devices Inc. | Description: DIODE 650V-8A TO220-2L Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 395pF @ 0V, 1MHz Current - Average Rectified (Io): 25A Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Current - Reverse Leakage @ Vr: 24 µA @ 650 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J008C3-ISATH | Sanan Semiconductor | SiC Schottky Diodes 650V 8A, TO220-2L, Industrial Grade | auf Bestellung 188 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J008C3-ISATH | Sanan Power Semiconductor | Description: DIODE SIL CARB 650V 25A TO220L Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 395pF @ 0V, 1MHz Current - Average Rectified (Io): 25A Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Current - Reverse Leakage @ Vr: 24 µA @ 650 V | auf Bestellung 195 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J008D3-ISARH | Sanan Power Semiconductor | Description: DIODE SIL CARB 650V 8A TO252-2L Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 8A Supplier Device Package: TO-252-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Current - Reverse Leakage @ Vr: 24 µA @ 650 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J008D3-ISARH | Sanan Power Semiconductor | Description: DIODE SIL CARB 650V 8A TO252-2L Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 8A Supplier Device Package: TO-252-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Current - Reverse Leakage @ Vr: 24 µA @ 650 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J008D3-ISARH | Sanan Semiconductor | SiC Schottky Diodes 650V 8A, TO252-2L, Industrial Grade | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J008D4-CSARH | Sanan Semiconductor | 650V 8A, TO252-2L, Industrial Grade | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J008N3-ISATH | Sanan Power Semiconductor | Description: DIODE SIL CARB 650V 20A TO220N2L Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 395pF @ 0V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-220N-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Current - Reverse Leakage @ Vr: 24 µA @ 650 V | auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J008S3 | Luminus Devices Inc. | Description: DIODE 650V-8A DFN88 Packaging: Tape & Reel (TR) Package / Case: 4-PowerVSFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 395pF @ 0V, 1MHz Current - Average Rectified (Io): 29A Supplier Device Package: 4-DFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Current - Reverse Leakage @ Vr: 24 µA @ 650 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J008S3 | Luminus Devices Inc. | Description: DIODE 650V-8A DFN88 Packaging: Cut Tape (CT) Package / Case: 4-PowerVSFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 395pF @ 0V, 1MHz Current - Average Rectified (Io): 29A Supplier Device Package: 4-DFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Current - Reverse Leakage @ Vr: 24 µA @ 650 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J008S3-ISBRH | Sanan Power Semiconductor | Description: DIODE SIL CARBIDE 650V 29A 4DFN Packaging: Tape & Reel (TR) Package / Case: 4-PowerVSFN Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 395pF @ 0V, 1MHz Current - Average Rectified (Io): 29A Supplier Device Package: 4-DFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Current - Reverse Leakage @ Vr: 24 µA @ 650 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J008S3-ISBRH | Sanan Power Semiconductor | Description: DIODE SIL CARBIDE 650V 29A 4DFN Packaging: Cut Tape (CT) Package / Case: 4-PowerVSFN Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 395pF @ 0V, 1MHz Current - Average Rectified (Io): 29A Supplier Device Package: 4-DFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Current - Reverse Leakage @ Vr: 24 µA @ 650 V | auf Bestellung 190 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J010C3 | Luminus Devices Inc. | Description: DIODE 650V-10A TO220-2L Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 556pF @ 0V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J010C3-ISATH | Sanan Power Semiconductor | Description: DIODE SIL CARB 650V 30A TO220L Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 556pF @ 0V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V | auf Bestellung 153 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J010D3-ISARH | Sanan Semiconductor | SiC Schottky Diodes 650V 10A, TO252-2L, Industrial Grade | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J010D3-ISARH | Sanan Power Semiconductor | Description: DIODE SIL CARB 650V 29A TO252-2L Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 556pF @ 0V, 1MHz Current - Average Rectified (Io): 29A Supplier Device Package: TO-252-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V | auf Bestellung 290 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J010D3-ISARH | Sanan Power Semiconductor | Description: DIODE SIL CARB 650V 29A TO252-2L Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 556pF @ 0V, 1MHz Current - Average Rectified (Io): 29A Supplier Device Package: TO-252-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J010E3 | Luminus Devices Inc. | Description: DIODE 650V-10A TO263-2L Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 556pF @ 0V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-263-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J010E3-ISARH | Sanan Power Semiconductor | Description: DIODE SIL CARB 650V 30A TO263-2L Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 556pF @ 0V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-263-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V | auf Bestellung 290 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J010E3-ISARH | Sanan Power Semiconductor | Description: DIODE SIL CARB 650V 30A TO263-2L Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 556pF @ 0V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-263-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J010E3-ISARH | Sanan Semiconductor | SiC Schottky Diodes 650V 10A, TO263-2L, Industrial Grade | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J010N3 | Luminus Devices Inc. | Description: DIODE 650V-10A TO220N-2L Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220N-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J010N3-ISATH | Sanan Power Semiconductor | Description: DIODE SIL CARB 650V 26A TO220N2L Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 556pF @ 0V, 1MHz Current - Average Rectified (Io): 26A Supplier Device Package: TO-220N-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V | auf Bestellung 290 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J010S3-ISBRH | Sanan Semiconductor | SiC Schottky Diodes 650V 10A, DFN8*8-4L, Industrial Grade | auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J010S3-ISBRH | Sanan Power Semiconductor | Description: DIODE 650V-10A DFN8*8-4L Packaging: Cut Tape (CT) Package / Case: 4-PowerVSFN Mounting Type: Surface Mount Current - Average Rectified (Io): 10A Supplier Device Package: 4-DFN (8x8) Voltage - DC Reverse (Vr) (Max): 650 V | auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J010S3-ISBRH | Sanan Power Semiconductor | Description: DIODE 650V-10A DFN8*8-4L Packaging: Tape & Reel (TR) Package / Case: 4-PowerVSFN Mounting Type: Surface Mount Current - Average Rectified (Io): 10A Supplier Device Package: 4-DFN (8x8) Voltage - DC Reverse (Vr) (Max): 650 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J012C3 | Luminus Devices Inc. | Description: DIODE 650V-12A TO220-2L Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 651pF @ 0V, 1MHz Current - Average Rectified (Io): 37A Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A Current - Reverse Leakage @ Vr: 36 µA @ 650 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J012C3-ISATH | Sanan Power Semiconductor | Description: DIODE SIL CARB 650V 37A TO220L Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 651pF @ 0V, 1MHz Current - Average Rectified (Io): 37A Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A Current - Reverse Leakage @ Vr: 36 µA @ 650 V | auf Bestellung 76 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J012C3-ISATH | Sanan Semiconductor | SiC Schottky Diodes 650V 12A, TO220-2L, Industrial Grade | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J012S3-ISARH | Sanan Power Semiconductor | Description: DIODE SIL CARBIDE 650V 44A 4DFN Packaging: Tape & Reel (TR) Package / Case: 4-PowerVSFN Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 651pF @ 0V, 1MHz Current - Average Rectified (Io): 44A Supplier Device Package: 4-DFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A Current - Reverse Leakage @ Vr: 36 µA @ 650 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J012S3-ISARH | Sanan Power Semiconductor | Description: DIODE SIL CARBIDE 650V 44A 4DFN Packaging: Cut Tape (CT) Package / Case: 4-PowerVSFN Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 651pF @ 0V, 1MHz Current - Average Rectified (Io): 44A Supplier Device Package: 4-DFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A Current - Reverse Leakage @ Vr: 36 µA @ 650 V | auf Bestellung 150 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J016C3 | Luminus Devices Inc. | Description: DIODE 650V-16A TO220-2L Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 837pF @ 0V, 1MHz Current - Average Rectified (Io): 44A Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A Current - Reverse Leakage @ Vr: 48 µA @ 650 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J016C3-ISATH | Sanan Power Semiconductor | Description: DIODE SIL CARB 650V 44A TO220L Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 837pF @ 0V, 1MHz Current - Average Rectified (Io): 44A Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A Current - Reverse Leakage @ Vr: 48 µA @ 650 V | auf Bestellung 167 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J016C3-ISATH | Sanan Semiconductor | SiC Schottky Diodes 650V 16A, TO220-2L, Industrial Grade | auf Bestellung 186 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J016G3 | Luminus Devices Inc. | Description: DIODE ARR SCHOTT 650V 25A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 25A Supplier Device Package: TO-247-3L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Current - Reverse Leakage @ Vr: 24 µA @ 650 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J016G3-ISATH | Sanan Power Semiconductor | Description: DIODE ARR SIC 650V 25A TO247-3L Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 25A Supplier Device Package: TO-247-3L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Current - Reverse Leakage @ Vr: 24 µA @ 650 V | auf Bestellung 94 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J016G3-ISATH | Sanan Semiconductor | SiC Schottky Diodes 650V 16A, TO247-3L, Industrial Grade | auf Bestellung 187 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J016H3-ISATH | Sanan Semiconductor | SiC Schottky Diodes 650V 16A, TO247-2L, Industrial Grade | auf Bestellung 190 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J016H3-ISATH | Sanan Power Semiconductor | Description: DIODE SIL CARB 650V 44A TO247-2L Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 837pF @ 0V, 1MHz Current - Average Rectified (Io): 44A Supplier Device Package: TO-247-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A Current - Reverse Leakage @ Vr: 48 µA @ 650 V | auf Bestellung 165 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J020C3 | Luminus Devices Inc. | Description: DIODE 650V-20A TO220-2L Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1018pF @ 0V, 1MHz Current - Average Rectified (Io): 51A Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SDS065J020C3-ISATH | Sanan Power Semiconductor | Description: DIODE SIL CARB 650V 51A TO220L Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1018pF @ 0V, 1MHz Current - Average Rectified (Io): 51A Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V | auf Bestellung 988 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J020C3-ISATH | Sanan Semiconductor | SiC Schottky Diodes 650V 20A, TO220-2L, Industrial Grade | auf Bestellung 150 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J020D3-ISARH | Sanan Power Semiconductor | Description: DIODE SIL CARB 650V 51A TO252-2L Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1018pF @ 0V, 1MHz Current - Average Rectified (Io): 51A Supplier Device Package: TO-252-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 50 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V | auf Bestellung 72 Stücke: Lieferzeit 10-14 Tag (e) |
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| SDS065J020D3-ISARH | Sanan Power Semiconductor | Description: DIODE SIL CARB 650V 51A TO252-2L Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1018pF @ 0V, 1MHz Current - Average Rectified (Io): 51A Supplier Device Package: TO-252-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 50 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |