Produkte > DMN
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| DMN4026SSDQ-13 | Diodes Zetex | Trans MOSFET N-CH 40V 7A Automotive AEC-Q101 8-Pin SO T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4026SSDQ-13 | DIODES/ZETEX | 2N-MOSFET 40V 7A 24mΩ 1.3W DMN4026SSDQ-13 Diodes TDMN4026ssdq Anzahl je Verpackung: 10 Stücke | auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN4026SSDQ-13 | Diodes Incorporated | MOSFET N-Ch Enh Mode FET 40Vdss 20Vgss | auf Bestellung 3941 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN4026SSDQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 40V 7A 8SO Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V Current - Continuous Drain (Id) @ 25°C: 7A Drain to Source Voltage (Vdss): 40V Power - Max: 1.3W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) | auf Bestellung 12424 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN4026SSDQ-13 | Diodes Zetex | Trans MOSFET N-CH 40V 7A Automotive AEC-Q101 8-Pin SO T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN4027SSD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 40V 5.4A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.4A Input Capacitance (Ciss) (Max) @ Vds: 604pF @ 20V Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO | auf Bestellung 2206 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN4027SSD-13 | Diodes Incorporated | MOSFETs MOSFET,N-CHANNEL 40V, 5.4A/- 7.1A | auf Bestellung 153 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN4027SSD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 40V 5.4A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.4A Input Capacitance (Ciss) (Max) @ Vds: 604pF @ 20V Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4027SSDQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 40V 5.4A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 604pF @ 20V Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4027SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 40V 6A 8SO | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4027SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 40V 6A 8SO | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4027SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 40V 6A 8SO | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4030LK3-13 | Diodes Incorporated | Description: MOSFET N-CH 40V 9.4A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V Power Dissipation (Max): 2.14W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 604 pF @ 20 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4030LK3-13 | Diodes Incorporated | Description: MOSFET N-CH 40V 9.4A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V Power Dissipation (Max): 2.14W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 604 pF @ 20 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4030LK3-13 | Diodes Incorporated | MOSFETs ENHANCE MODE MOSFET 40V N-CHANNEL | auf Bestellung 2118 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN4030LK3Q-13 | Diodes Incorporated | Description: MOSFET N-CH 40V 9.4A TO252 T&R Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V Power Dissipation (Max): 2.14W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252, (D-Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 604 pF @ 20 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4030LK3Q-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 31V-40V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4031SSD-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 31V-40 SO-8,2.5K | auf Bestellung 9611 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN4031SSD-13 | Diodes Zetex | Trans MOSFET N-CH 40V 5.2A 8-Pin SO T/R | auf Bestellung 100000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN4031SSD-13 | Diodes Zetex | Trans MOSFET N-CH 40V 5.2A 8-Pin SO T/R | auf Bestellung 100000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN4031SSD-13 | Diodes Zetex | Trans MOSFET N-CH 40V 7A 8-Pin SO T/R | auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN4031SSD-13 | Diodes Zetex | Trans MOSFET N-CH 40V 7A 8-Pin SO T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4031SSD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 40V 5.2A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.42W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.2A Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active | auf Bestellung 2497 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN4031SSD-13 | Diodes Zetex | Trans MOSFET N-CH 40V 5.2A 8-Pin SO T/R | auf Bestellung 100000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN4031SSD-13 | Diodes Zetex | Trans MOSFET N-CH 40V 7A 8-Pin SO T/R | auf Bestellung 265000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN4031SSD-13 | Diodes Zetex | Trans MOSFET N-CH 40V 5.2A 8-Pin SO T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN4031SSD-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8 Kind of package: 13 inch reel; tape Mounting: SMD Case: SO8 Polarisation: unipolar Gate charge: 18.6nC On-state resistance: 50mΩ Power dissipation: 2.6W Drain current: 5.6A Gate-source voltage: ±20V Pulsed drain current: 40A Drain-source voltage: 40V Kind of channel: enhancement Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4031SSD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 40V 5.2A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.42W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.2A Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active | auf Bestellung 2497 Stücke: Lieferzeit 10-14 Tag (e) | Mindestbestellmenge: 2497 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4031SSD-13 | Diodes Zetex | Trans MOSFET N-CH 40V 7A 8-Pin SO T/R | auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN4031SSD-13 | Diodes Zetex | Trans MOSFET N-CH 40V 7A 8-Pin SO T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4031SSDQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 40V 5.2A 8SOIC | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4031SSDQ-13 | Diodes Zetex | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Automotive AEC-Q101 | auf Bestellung 80000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN4031SSDQ-13 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8 Kind of package: 13 inch reel; tape Mounting: SMD Case: SO8 Polarisation: unipolar Gate charge: 18.6nC On-state resistance: 50mΩ Power dissipation: 2.6W Drain current: 5.6A Gate-source voltage: ±20V Pulsed drain current: 40A Drain-source voltage: 40V Application: automotive industry Kind of channel: enhancement Type of transistor: N-MOSFET x2 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4031SSDQ-13 | Diodes Zetex | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Automotive AEC-Q101 | auf Bestellung 80000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN4031SSDQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 40V 5.2A 8SOIC | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4031SSDQ-13 | Diodes Incorporated | MOSFETs Dual N-Ch Enh FET 40V 20Vgss 20A | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN4031SSDQ-13 | Diodes Zetex | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Automotive AEC-Q101 | auf Bestellung 77500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN4034SSD | Diodes Incorporated | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4034SSD-13 | Diodes Zetex | Trans MOSFET N-CH 40V 4.8A 8-Pin SO T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4034SSD-13 | Diodes Incorporated | MOSFETs MOSFET,N-CHANNEL 40V, 4.8A/- 6.3A | auf Bestellung 4653 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN4034SSD-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 24.8A; 2.14W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 5A Pulsed drain current: 24.8A Power dissipation: 2.14W Case: SO8 Gate-source voltage: ±20V On-state resistance: 59mΩ Mounting: SMD Gate charge: 18nC Kind of package: 13 inch reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4034SSS-13 | Diodes Zetex | Trans MOSFET N-CH 40V 5.4A 8-Pin SO T/R | auf Bestellung 70000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN4034SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 40V 5.4A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V | auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN4034SSS-13 | Diodes Incorporated | MOSFETs MOSFET,N-CHANNEL 40V, 5.5A/- 7.2A | auf Bestellung 4349 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN4034SSS-13 | Diodes Zetex | Trans MOSFET N-CH 40V 5.4A 8-Pin SO T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4034SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 40V 5.4A 8SO Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) | auf Bestellung 62930 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN4034SSS-13 | Diodes Zetex | Trans MOSFET N-CH 40V 5.4A 8-Pin SO T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4034SSSQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V~40V SO-8 T&R 2.5K | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4035L-13 | Diodes Incorporated | Description: MOSFET N-CH 40V 4.6A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V Power Dissipation (Max): 720mW Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 20 V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN4035L-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4035L-13 | Diodes Zetex | Trans MOSFET N-CH 40V 4.6A 3-Pin SOT-23 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN4035L-7 | Diodes Incorporated | Description: MOSFET N-CH 40V 4.6A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V Power Dissipation (Max): 720mW Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 20 V | auf Bestellung 90000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN4035L-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4035L-7 | Diodes Zetex | Trans MOSFET N-CH 40V 4.6A 3-Pin SOT-23 T/R | auf Bestellung 87000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN4035L-7 | Diodes Incorporated | Description: MOSFET N-CH 40V 4.6A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V Power Dissipation (Max): 720mW Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 20 V | auf Bestellung 92503 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN4035L-7 | Diodes Zetex | Trans MOSFET N-CH 40V 4.6A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4035LQ-13 | Diodes Zetex | Trans MOSFET N-CH 40V 4.6A 3-Pin SOT-23 T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4035LQ-13 | Diodes Incorporated | Description: MOSFET N-CH 40V 4.6A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V Power Dissipation (Max): 720mW Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN4035LQ-13 | Diodes Zetex | Trans MOSFET N-CH 40V 4.6A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN4035LQ-13 | Diodes Incorporated | Description: MOSFET N-CH 40V 4.6A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V Power Dissipation (Max): 720mW Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 40445 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN4035LQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40V | auf Bestellung 11761 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN4035LQ-7 | Diodes Incorporated | Description: MOSFET N-CH 40V 4.6A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V Power Dissipation (Max): 720mW Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 20 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4035LQ-7 | Diodes Incorporated | Description: MOSFET N-CH 40V 4.6A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V Power Dissipation (Max): 720mW Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 20 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4035LQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40V | auf Bestellung 4496 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN4035LQ-7 | Diodes Zetex | Trans MOSFET N-CH 40V 4.6A 3-Pin SOT-23 T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4036LK3-13 | Diodes Incorporated | MOSFETs ENHANCE MODE MOSFET 40V N-CHANNEL | auf Bestellung 199 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN4036LK3-13 | Diodes Incorporated | Description: MOSFET N-CH 40V 8.5A TO252-3 Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.12W (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) | auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN4036LK3-13 | Diodes Zetex | Trans MOSFET N-CH 40V 8.5A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4036LK3-13 | Diodes Zetex | Trans MOSFET N-CH 40V 8.5A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4036LK3-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 9.4A; 4.12W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 9.4A Power dissipation: 4.12W Case: TO252 Gate-source voltage: ±20V On-state resistance: 61mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement | auf Bestellung 2468 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN4036LK3-13 | Diodes Incorporated | Description: MOSFET N-CH 40V 8.5A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 12A, 10V Power Dissipation (Max): 2.12W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V | auf Bestellung 46802 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN4036LK3-13 | Diodes Zetex | Trans MOSFET N-CH 40V 8.5A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN4036LK3Q-13 | Diodes Zetex | MOSFET BVDSS, 31V to 40V TO252, 2.5K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4036LK3Q-13 | Diodes Incorporated | MOSFETs MOSFETBVDSS: 31V-40V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4040SK3-13 | Diodes Incorporated | MOSFETs 40V N-Ch Enh Mode 30mOhm 10V 13.8A | auf Bestellung 17864 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN4040SK3-13 | Diodes Zetex | Trans MOSFET N-CH 40V 9.3A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4040SK3-13 | Diodes | rans MOSFET N-CH 40V 9.3A Automotive 3-Pin(2+Tab) DPAK T/R Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4040SK3-13 | Diodes Incorporated | Description: MOSFET N-CH 40V 6A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V Power Dissipation (Max): 1.71W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 20 V | auf Bestellung 153674 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN4040SK3-13 | Diodes Zetex | Trans MOSFET N-CH 40V 9.3A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 53 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4040SK3-13 | Diodes Zetex | Trans MOSFET N-CH 40V 9.3A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4040SK3-13 | Diodes Incorporated | Description: MOSFET N-CH 40V 6A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V Power Dissipation (Max): 1.71W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 20 V | auf Bestellung 152500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN4040SK3Q-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40V TO252 T&R 2.5K | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4060SVT-7 | Diodes Zetex | Trans MOSFET N-CH 45V 4.8A 6-Pin TSOT-26 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN4060SVT-7 | Diodes Zetex | Trans MOSFET N-CH 45V 4.8A 6-Pin TSOT-26 T/R | auf Bestellung 2564 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN4060SVT-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60 1V-60V TSOT26 T&R 3K | auf Bestellung 23361 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN4060SVT-7 | Diodes Zetex | Trans MOSFET N-CH 45V 4.8A 6-Pin TSOT-26 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN4060SVT-7 | Diodes Zetex | Trans MOSFET N-CH 45V 4.8A 6-Pin TSOT-26 T/R | auf Bestellung 2564 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN4060SVT-7 | Diodes Incorporated | Description: MOSFET N-CH 45V 4.8A TSOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 4.3A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TSOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V | auf Bestellung 1201 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN4060SVT-7 | Diodes Zetex | Trans MOSFET N-CH 45V 4.8A 6-Pin TSOT-26 T/R | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN4060SVT-7 | Diodes Zetex | Trans MOSFET N-CH 45V 4.8A 6-Pin TSOT-26 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4060SVT-7 | Diodes Zetex | Trans MOSFET N-CH 45V 4.8A 6-Pin TSOT-26 T/R | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN4060SVT-7 | Diodes Incorporated | Description: MOSFET N-CH 45V 4.8A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 4.3A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TSOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4060SVTQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V 40V TSOT26 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4060SVTQ-7 | Diodes Zetex | DMN4060SVTQ-7 | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN4060SVTQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V 40V TSOT26 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4468LSS | Diodes Incorporated | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4468LSS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 50A; 1.52W; SO8 On-state resistance: 20mΩ Mounting: SMD Pulsed drain current: 50A Power dissipation: 1.52W Gate charge: 18.85nC Polarisation: unipolar Drain current: 9A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: SO8 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN4468LSS-13 | Diodes Incorporated | Description: MOSFET N CH 30V 10A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 11.6A, 10V Power Dissipation (Max): 1.52W (Ta) Vgs(th) (Max) @ Id: 1.95V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V | auf Bestellung 92500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN4468LSS-13 | DIODES INC. | Description: DIODES INC. - DMN4468LSS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 10 A, 0.011 ohm, SOIC, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.95V euEccn: NLR Verlustleistung: 1.52W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.011ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2480 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN4468LSS-13 | Diodes Incorporated | Description: MOSFET N CH 30V 10A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 11.6A, 10V Power Dissipation (Max): 1.52W (Ta) Vgs(th) (Max) @ Id: 1.95V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V | auf Bestellung 93306 Stücke: Lieferzeit 10-14 Tag (e) |
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