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BSP126,115 BSP126,115 NEXPERIA BSP126.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.375A; 1.5W; SC73,SOT223
Power dissipation: 1.5W
Polarisation: unipolar
Drain current: 0.375A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SC73; SOT223
On-state resistance: 7.5Ω
Mounting: SMD
auf Bestellung 259 Stücke:
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97+0.88 EUR
117+0.73 EUR
137+0.62 EUR
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BSP19,115 BSP19,115 NEXPERIA BSP19_20.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.1A; 1.2W; SC73,SOT223
Collector-emitter voltage: 400V
Power dissipation: 1.2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 40
Kind of package: reel; tape
Case: SC73; SOT223
Frequency: 70MHz
Collector current: 0.1A
Mounting: SMD
Produkt ist nicht verfügbar
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BCX54-16,115 BCX54-16,115 NEXPERIA BCX54_SER.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.35W
Case: SC62; SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Current gain: 100...250
Produkt ist nicht verfügbar
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BCX54-16,135 BCX54-16,135 NEXPERIA BCX54_SER.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.35W
Case: SC62; SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Current gain: 100...250
Produkt ist nicht verfügbar
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BCX54-16-QX BCX54-16-QX NEXPERIA BCX54-Q_SER.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.35W
Case: SC62; SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Application: automotive industry
Current gain: 100...250
Produkt ist nicht verfügbar
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74ALVCH16501DGGY NEXPERIA 74ALVCH16501DGGY.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 18bit,3-state,bus transceiver; CMOS,TTL; SMD; ALVCH
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 18bit; bus transceiver
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP56
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.2...3.6V DC
Family: ALVCH
Produkt ist nicht verfügbar
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PESD24VS2UT,215 PESD24VS2UT,215 NEXPERIA PESD24VS2UT.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 26.5÷27.5V; 3A; 160W; ESD; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 26.5...27.5V
Semiconductor structure: common anode; double; unidirectional
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 2
Application: automotive industry
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.16kW
auf Bestellung 17152 Stücke:
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132+0.64 EUR
196+0.44 EUR
315+0.27 EUR
500+0.19 EUR
1000+0.14 EUR
3000+0.13 EUR
15000+0.12 EUR
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PESD3V3L1BAZ PESD3V3L1BAZ NEXPERIA PESD3V3L1BA.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 500W; 5.8÷6.9V; 18A; bidirectional; SC76,SOD323
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.5kW
Max. off-state voltage: 3.3V
Breakdown voltage: 5.8...6.9V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Case: SC76; SOD323
Mounting: SMD
Leakage current: 2µA
Produkt ist nicht verfügbar
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74VHC125D,118 74VHC125D,118 NEXPERIA 74VHC_VHCT125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,line driver; Ch: 4; IN: 2; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver
Technology: CMOS
Supply voltage: 2...5.5V DC
Kind of output: 3-state
Operating temperature: -40...125°C
Number of inputs: 2
Kind of package: reel; tape
Case: SO14
Family: VHC
Number of channels: 4
Mounting: SMD
Produkt ist nicht verfügbar
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74VHC125PW,118 74VHC125PW,118 NEXPERIA 74VHC_VHCT125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,line driver; Ch: 4; IN: 2; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver
Technology: CMOS
Supply voltage: 2...5.5V DC
Kind of output: 3-state
Operating temperature: -40...125°C
Number of inputs: 2
Kind of package: reel; tape
Case: TSSOP14
Family: VHC
Number of channels: 4
Mounting: SMD
Produkt ist nicht verfügbar
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PSMN5R5-60YS,115 PSMN5R5-60YS,115 NEXPERIA PSMN5R5-60YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 74A; 130W
Mounting: SMD
Power dissipation: 130W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 74A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 8.3mΩ
auf Bestellung 1150 Stücke:
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28+3.06 EUR
38+2.3 EUR
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PSMN4R1-60YLX PSMN4R1-60YLX NEXPERIA PSMN4R1-60YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 593A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 593A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
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49+1.77 EUR
54+1.58 EUR
100+1.46 EUR
250+1.42 EUR
500+1.26 EUR
1000+1.24 EUR
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PSMN013-40VLDX PSMN013-40VLDX NEXPERIA PSMN013-40VLD.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; NextPowerS3; unipolar; 40V; 30A; Idm: 169A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 169A
Power dissipation: 46W
Case: LFPAK56D; SOT1205
Gate-source voltage: ±20V
On-state resistance: 32.8mΩ
Mounting: SMD
Gate charge: 19.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
auf Bestellung 1500 Stücke:
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57+1.51 EUR
69+1.24 EUR
82+1.04 EUR
100+0.94 EUR
250+0.87 EUR
500+0.82 EUR
1000+0.75 EUR
1500+0.73 EUR
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PSMN1R0-30YLC,115 PSMN1R0-30YLC,115 NEXPERIA PSMN1R0-30YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 272W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 272W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 227 Stücke:
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37+2.31 EUR
41+2.09 EUR
100+1.94 EUR
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PSMN4R0-30YLDX PSMN4R0-30YLDX NEXPERIA PSMN4R0-30YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 95A; Idm: 378A; 64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 95A
Pulsed drain current: 378A
Power dissipation: 64W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1539 Stücke:
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85+1 EUR
133+0.64 EUR
153+0.56 EUR
161+0.54 EUR
200+0.51 EUR
250+0.5 EUR
500+0.46 EUR
1000+0.43 EUR
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PSMN7R5-60YLX PSMN7R5-60YLX NEXPERIA PSMN7R5-60YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 346A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61A
Pulsed drain current: 346A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 19.7mΩ
Mounting: SMD
Gate charge: 60.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
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51+1.69 EUR
60+1.43 EUR
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100+1.19 EUR
250+1.12 EUR
500+1.02 EUR
1000+1 EUR
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PSMN013-30MLC,115 PSMN013-30MLC,115 NEXPERIA PSMN013-30MLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 157A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Pulsed drain current: 157A
Power dissipation: 38W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 11.8mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1559 Stücke:
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193+0.44 EUR
211+0.4 EUR
228+0.37 EUR
237+0.36 EUR
257+0.33 EUR
500+0.32 EUR
1000+0.29 EUR
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PSMN1R7-60BS,118 PSMN1R7-60BS,118 NEXPERIA PSMN1R7-60BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 306W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 137nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 369 Stücke:
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20+4.27 EUR
22+3.93 EUR
25+3.8 EUR
50+3.56 EUR
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PSMN8R5-60YS,115 PSMN8R5-60YS,115 NEXPERIA PSMN8R5-60YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 76A; Idm: 303A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 76A
Pulsed drain current: 303A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1314 Stücke:
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57+1.51 EUR
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250+1.07 EUR
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PSMN3R5-30YL,115 PSMN3R5-30YL,115 NEXPERIA PSMN3R5-30YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 447A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 447A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.37mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1057 Stücke:
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39+2.21 EUR
52+1.67 EUR
100+1.5 EUR
250+1.39 EUR
500+1.33 EUR
1000+1.19 EUR
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PSMN017-60YS,115 PSMN017-60YS,115 NEXPERIA PSMN017-60YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 44A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 44A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 36.1mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 942 Stücke:
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74+1.15 EUR
87+0.98 EUR
107+0.8 EUR
120+0.71 EUR
250+0.65 EUR
500+0.63 EUR
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PSMN015-60BS,118 PSMN015-60BS,118 NEXPERIA PSMN015-60BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 201A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 201A
Power dissipation: 86W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 20.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 598 Stücke:
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41+2.07 EUR
53+1.63 EUR
60+1.43 EUR
100+1.31 EUR
250+1.26 EUR
500+1.12 EUR
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PSMN013-60YLX PSMN013-60YLX NEXPERIA PSMN013-60YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 53A; Idm: 212A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 53A
Pulsed drain current: 212A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 12.1mΩ
Mounting: SMD
Gate charge: 33.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN0R9-25YLC,115 PSMN0R9-25YLC,115 NEXPERIA PSMN0R9-25YLC.115.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 272W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 272W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.125mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1029 Stücke:
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30+2.84 EUR
34+2.55 EUR
40+2.14 EUR
100+1.94 EUR
250+1.78 EUR
500+1.7 EUR
1000+1.54 EUR
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PSMN013-30YLC,115 PSMN013-30YLC,115 NEXPERIA PSMN013-30YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 26W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 26W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 27.2mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1708 Stücke:
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103+0.83 EUR
119+0.71 EUR
131+0.65 EUR
181+0.48 EUR
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500+0.39 EUR
1000+0.38 EUR
1500+0.33 EUR
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PSMN0R9-30YLDX PSMN0R9-30YLDX NEXPERIA PSMN0R9-30YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 284A; Idm: 1.8kA; 291W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 284A
Pulsed drain current: 1.8kA
Power dissipation: 291W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 1.44mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1327 Stücke:
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28+3.09 EUR
29+3 EUR
30+2.88 EUR
100+2.8 EUR
250+2.69 EUR
500+2.62 EUR
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PSMN030-60YS,115 PSMN030-60YS,115 NEXPERIA PSMN030-60YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29A; Idm: 116A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 29A
Pulsed drain current: 116A
Power dissipation: 56W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 49.6mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1388 Stücke:
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105+0.82 EUR
139+0.62 EUR
154+0.55 EUR
167+0.51 EUR
250+0.49 EUR
500+0.44 EUR
1000+0.43 EUR
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PSMN1R2-25YLC,115 PSMN1R2-25YLC,115 NEXPERIA PSMN1R2-25YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 1133A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 1133A
Power dissipation: 179W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1391 Stücke:
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55+1.57 EUR
69+1.24 EUR
80+1.07 EUR
100+1.02 EUR
250+0.94 EUR
500+0.9 EUR
1000+0.82 EUR
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PSMN038-100YLX PSMN038-100YLX NEXPERIA PSMN038-100YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21.3A; Idm: 120A; 94.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21.3A
Pulsed drain current: 120A
Power dissipation: 94.9W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 103.5mΩ
Mounting: SMD
Gate charge: 39.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 589 Stücke:
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70+1.23 EUR
94+0.92 EUR
103+0.82 EUR
112+0.76 EUR
250+0.73 EUR
500+0.65 EUR
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PSMN4R6-60BS,118 PSMN4R6-60BS,118 NEXPERIA PSMN4R6-60BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 565A
Power dissipation: 211W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 70.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 671 Stücke:
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25+3.47 EUR
33+2.61 EUR
37+2.34 EUR
100+2.18 EUR
250+2.07 EUR
500+1.87 EUR
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PSMN2R0-30YLE,115 PSMN2R0-30YLE,115 NEXPERIA PSMN2R0-30YLE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1015A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1015A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1314 Stücke:
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44+1.98 EUR
48+1.78 EUR
52+1.65 EUR
100+1.57 EUR
250+1.43 EUR
500+1.39 EUR
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PSMN3R0-60PS,127 PSMN3R0-60PS,127 NEXPERIA PSMN3R0-60PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 824A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 824A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
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PSMN3R9-60PSQ PSMN3R9-60PSQ NEXPERIA PSMN3R9-60PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 705A; 263W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Pulsed drain current: 705A
Power dissipation: 263W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.94mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 66 Stücke:
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22+3.96 EUR
24+3.57 EUR
26+3.36 EUR
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PSMN2R0-30PL,127 PSMN2R0-30PL,127 NEXPERIA PSMN2R0-30PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 211W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 40 Stücke:
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26+3.32 EUR
29+3.01 EUR
32+2.69 EUR
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PSMN7R0-30YLC,115 PSMN7R0-30YLC,115 NEXPERIA PSMN7R0-30YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 245A
Power dissipation: 48W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1390 Stücke:
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96+0.89 EUR
152+0.56 EUR
250+0.55 EUR
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PSMN012-100YS,115 PSMN012-100YS,115 NEXPERIA PSMN012-100YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 35.8mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1369 Stücke:
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32+2.69 EUR
43+1.99 EUR
52+1.67 EUR
100+1.5 EUR
250+1.39 EUR
500+1.33 EUR
1000+1.19 EUR
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PSMN017-30PL,127 PSMN017-30PL,127 NEXPERIA PSMN017-30PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 152A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 152A
Power dissipation: 45W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 5.1nC
Kind of package: tube
Kind of channel: enhancement
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13+6.56 EUR
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PSMN8R0-40PS,127 PSMN8R0-40PS,127 NEXPERIA PSMN8R0-40PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
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67+1.27 EUR
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PSMN1R1-30PL,127 PSMN1R1-30PL,127 NEXPERIA PSMN1R1-30PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Pulsed drain current: 1609A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 243nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 32 Stücke:
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14+6.18 EUR
16+5.45 EUR
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PSMN7R0-60YS,115 PSMN7R0-60YS,115 NEXPERIA PSMN7R0-60YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 14.7mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1422 Stücke:
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33+2.61 EUR
44+1.94 EUR
49+1.75 EUR
100+1.63 EUR
250+1.57 EUR
500+1.39 EUR
1000+1.33 EUR
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PSMN1R8-80SSFJ NEXPERIA PSMN1R8-80SSF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 205A; Idm: 1158A; 341W
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 222nC
On-state resistance: 4.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 341W
Pulsed drain current: 1158A
Drain current: 205A
Case: LFPAK88; SOT1235
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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PSMN1R2-25YLDX NEXPERIA PSMN1R2-25YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 205A; Idm: 1163A
Technology: NextPowerS3
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 60.3nC
On-state resistance: 2.87mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Power dissipation: 172W
Pulsed drain current: 1163A
Drain current: 205A
Case: LFPAK56; PowerSO8; SOT669
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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74LV4060PW,112 74LV4060PW,112 NEXPERIA 74LV4060.pdf Category: Counters/dividers
Description: IC: digital; 14bit,binary counter; TTL; SMD; TSSOP16; LV; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: 14bit; binary counter
Mounting: SMD
Case: TSSOP16
Family: LV
Kind of package: tube
Operating temperature: -40...125°C
Supply voltage: 1...5.5V DC
Technology: TTL
auf Bestellung 232 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.7 EUR
137+0.62 EUR
148+0.57 EUR
155+0.55 EUR
192+0.49 EUR
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74LV4060DB,112 74LV4060DB,112 NEXPERIA 74LV4060.pdf Category: Counters/dividers
Description: IC: digital; 14bit,binary counter; TTL; SMD; SSOP16; LV; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: 14bit; binary counter
Mounting: SMD
Case: SSOP16
Family: LV
Kind of package: tube
Operating temperature: -40...125°C
Supply voltage: 1...5.5V DC
Technology: TTL
auf Bestellung 141 Stücke:
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120+0.71 EUR
141+0.6 EUR
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PUMH17,115 PUMH17,115 NEXPERIA PEMH17_PUMH17.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 47kΩ; R2: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Frequency: 230MHz
Produkt ist nicht verfügbar
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PUMH13,115 PUMH13,115 NEXPERIA PEMH13_PUMH13.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 18046 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.13 EUR
794+0.11 EUR
926+0.092 EUR
1185+0.071 EUR
1578+0.054 EUR
1774+0.048 EUR
1894+0.045 EUR
3000+0.042 EUR
6000+0.039 EUR
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PUMH10,115 PUMH10,115 NEXPERIA PEMH10_PUMH10.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 230MHz
auf Bestellung 4804 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.17 EUR
685+0.12 EUR
834+0.1 EUR
973+0.088 EUR
1134+0.075 EUR
1374+0.062 EUR
1558+0.055 EUR
1656+0.051 EUR
3000+0.046 EUR
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PUMH1,115 PUMH1,115 NEXPERIA PEMH1_PUMH1.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 22kΩ; R2: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Frequency: 230MHz
auf Bestellung 658 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.17 EUR
658+0.13 EUR
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PUMH15,115 PUMH15,115 NEXPERIA PEMH15_PUMH15.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Frequency: 230MHz
auf Bestellung 11 Stücke:
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11+7.75 EUR
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PUMH18,115 PUMH18,115 NEXPERIA PEMH18_PUMH18.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Frequency: 230MHz
auf Bestellung 595 Stücke:
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417+0.2 EUR
595+0.14 EUR
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PUMH19,115 PUMH19,115 NEXPERIA PEMH19_PUMH19.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Frequency: 230MHz
auf Bestellung 5533 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.086 EUR
1220+0.07 EUR
1624+0.052 EUR
1786+0.048 EUR
1931+0.044 EUR
2025+0.042 EUR
2253+0.038 EUR
3000+0.037 EUR
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PUMH10-QX PUMH10-QX NEXPERIA PUMH10-Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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PUMH1-QX PUMH1-QX NEXPERIA PUMH1-Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 10kΩ; R2: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Frequency: 230MHz
Produkt ist nicht verfügbar
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PUMH10,125 PUMH10,125 NEXPERIA PUMH10.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 300mW; SC88,SOT363,TSSOP6
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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PUMH10Z PUMH10Z NEXPERIA PUMH10.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 230MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PUMH15-QX PUMH15-QX NEXPERIA PUMH15-Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 4.7kΩ
Frequency: 230MHz
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5 Stücke
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PUMH16,115 PUMH16,115 NEXPERIA PEMH16_PUMH16.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 22kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Frequency: 230MHz
Produkt ist nicht verfügbar
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PMST5551,115 PMST5551,115 NEXPERIA PMST5551.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.3A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.3A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 250
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 2492 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.2 EUR
486+0.18 EUR
551+0.15 EUR
653+0.13 EUR
875+0.098 EUR
964+0.088 EUR
1053+0.081 EUR
Mindestbestellmenge: 417 Stücke
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BAS16H,115 BAS16H,115 NEXPERIA BAS16_SER.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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74HCT4046AD,118 74HCT4046AD,118 NEXPERIA 74HCT4046AD,118.pdf Category: Other logic integrated circuits
Description: IC: digital; phase-locked loop; CMOS,TTL; 4.5÷5.5VDC; SMD; SO16
Kind of package: reel; tape
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Operating temperature: -40...125°C
Technology: CMOS; TTL
Case: SO16
Family: HCT
Kind of integrated circuit: phase-locked loop
auf Bestellung 409 Stücke:
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55+1.57 EUR
72+1.19 EUR
100+1.06 EUR
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BSP126,115 BSP126.pdf
BSP126,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.375A; 1.5W; SC73,SOT223
Power dissipation: 1.5W
Polarisation: unipolar
Drain current: 0.375A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SC73; SOT223
On-state resistance: 7.5Ω
Mounting: SMD
auf Bestellung 259 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
97+0.88 EUR
117+0.73 EUR
137+0.62 EUR
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BSP19,115 BSP19_20.pdf
BSP19,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.1A; 1.2W; SC73,SOT223
Collector-emitter voltage: 400V
Power dissipation: 1.2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 40
Kind of package: reel; tape
Case: SC73; SOT223
Frequency: 70MHz
Collector current: 0.1A
Mounting: SMD
Produkt ist nicht verfügbar
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BCX54-16,115 BCX54_SER.pdf
BCX54-16,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.35W
Case: SC62; SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Current gain: 100...250
Produkt ist nicht verfügbar
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BCX54-16,135 BCX54_SER.pdf
BCX54-16,135
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.35W
Case: SC62; SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Current gain: 100...250
Produkt ist nicht verfügbar
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BCX54-16-QX BCX54-Q_SER.pdf
BCX54-16-QX
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.35W
Case: SC62; SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Application: automotive industry
Current gain: 100...250
Produkt ist nicht verfügbar
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74ALVCH16501DGGY 74ALVCH16501DGGY.pdf
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 18bit,3-state,bus transceiver; CMOS,TTL; SMD; ALVCH
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 18bit; bus transceiver
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP56
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.2...3.6V DC
Family: ALVCH
Produkt ist nicht verfügbar
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PESD24VS2UT,215 PESD24VS2UT.pdf
PESD24VS2UT,215
Hersteller: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.5÷27.5V; 3A; 160W; ESD; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 26.5...27.5V
Semiconductor structure: common anode; double; unidirectional
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 2
Application: automotive industry
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.16kW
auf Bestellung 17152 Stücke:
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132+0.64 EUR
196+0.44 EUR
315+0.27 EUR
500+0.19 EUR
1000+0.14 EUR
3000+0.13 EUR
15000+0.12 EUR
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PESD3V3L1BAZ PESD3V3L1BA.pdf
PESD3V3L1BAZ
Hersteller: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 500W; 5.8÷6.9V; 18A; bidirectional; SC76,SOD323
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.5kW
Max. off-state voltage: 3.3V
Breakdown voltage: 5.8...6.9V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Case: SC76; SOD323
Mounting: SMD
Leakage current: 2µA
Produkt ist nicht verfügbar
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74VHC125D,118 74VHC_VHCT125.pdf
74VHC125D,118
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,line driver; Ch: 4; IN: 2; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver
Technology: CMOS
Supply voltage: 2...5.5V DC
Kind of output: 3-state
Operating temperature: -40...125°C
Number of inputs: 2
Kind of package: reel; tape
Case: SO14
Family: VHC
Number of channels: 4
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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74VHC125PW,118 74VHC_VHCT125.pdf
74VHC125PW,118
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,line driver; Ch: 4; IN: 2; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver
Technology: CMOS
Supply voltage: 2...5.5V DC
Kind of output: 3-state
Operating temperature: -40...125°C
Number of inputs: 2
Kind of package: reel; tape
Case: TSSOP14
Family: VHC
Number of channels: 4
Mounting: SMD
Produkt ist nicht verfügbar
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PSMN5R5-60YS,115 PSMN5R5-60YS.pdf
PSMN5R5-60YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 74A; 130W
Mounting: SMD
Power dissipation: 130W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 74A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 8.3mΩ
auf Bestellung 1150 Stücke:
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28+3.06 EUR
38+2.3 EUR
100+2.06 EUR
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PSMN4R1-60YLX PSMN4R1-60YL.pdf
PSMN4R1-60YLX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 593A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 593A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1146 Stücke:
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40+2.13 EUR
49+1.77 EUR
54+1.58 EUR
100+1.46 EUR
250+1.42 EUR
500+1.26 EUR
1000+1.24 EUR
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PSMN013-40VLDX PSMN013-40VLD.pdf
PSMN013-40VLDX
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; NextPowerS3; unipolar; 40V; 30A; Idm: 169A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 169A
Power dissipation: 46W
Case: LFPAK56D; SOT1205
Gate-source voltage: ±20V
On-state resistance: 32.8mΩ
Mounting: SMD
Gate charge: 19.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
auf Bestellung 1500 Stücke:
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57+1.51 EUR
69+1.24 EUR
82+1.04 EUR
100+0.94 EUR
250+0.87 EUR
500+0.82 EUR
1000+0.75 EUR
1500+0.73 EUR
Mindestbestellmenge: 57 Stücke
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PSMN1R0-30YLC,115 PSMN1R0-30YLD.pdf
PSMN1R0-30YLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 272W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 272W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 227 Stücke:
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31+2.77 EUR
37+2.31 EUR
41+2.09 EUR
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PSMN4R0-30YLDX PSMN4R0-30YLD.pdf
PSMN4R0-30YLDX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 95A; Idm: 378A; 64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 95A
Pulsed drain current: 378A
Power dissipation: 64W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1539 Stücke:
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85+1 EUR
133+0.64 EUR
153+0.56 EUR
161+0.54 EUR
200+0.51 EUR
250+0.5 EUR
500+0.46 EUR
1000+0.43 EUR
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PSMN7R5-60YLX PSMN7R5-60YL.pdf
PSMN7R5-60YLX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 346A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61A
Pulsed drain current: 346A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 19.7mΩ
Mounting: SMD
Gate charge: 60.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1206 Stücke:
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51+1.69 EUR
60+1.43 EUR
67+1.27 EUR
100+1.19 EUR
250+1.12 EUR
500+1.02 EUR
1000+1 EUR
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PSMN013-30MLC,115 PSMN013-30MLC.pdf
PSMN013-30MLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 157A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Pulsed drain current: 157A
Power dissipation: 38W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 11.8mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1559 Stücke:
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193+0.44 EUR
211+0.4 EUR
228+0.37 EUR
237+0.36 EUR
257+0.33 EUR
500+0.32 EUR
1000+0.29 EUR
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PSMN1R7-60BS,118 PSMN1R7-60BS.pdf
PSMN1R7-60BS,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 306W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 137nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 369 Stücke:
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22+3.93 EUR
25+3.8 EUR
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PSMN8R5-60YS,115 PSMN8R5-60YS.pdf
PSMN8R5-60YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 76A; Idm: 303A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 76A
Pulsed drain current: 303A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1314 Stücke:
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57+1.51 EUR
63+1.36 EUR
68+1.26 EUR
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PSMN3R5-30YL,115 PSMN3R5-30YL.pdf
PSMN3R5-30YL,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 447A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 447A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.37mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1057 Stücke:
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39+2.21 EUR
52+1.67 EUR
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500+1.33 EUR
1000+1.19 EUR
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PSMN017-60YS,115 PSMN017-60YS.pdf
PSMN017-60YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 44A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 44A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 36.1mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 942 Stücke:
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74+1.15 EUR
87+0.98 EUR
107+0.8 EUR
120+0.71 EUR
250+0.65 EUR
500+0.63 EUR
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PSMN015-60BS,118 PSMN015-60BS.pdf
PSMN015-60BS,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 201A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 201A
Power dissipation: 86W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 20.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 598 Stücke:
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41+2.07 EUR
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60+1.43 EUR
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500+1.12 EUR
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PSMN013-60YLX PSMN013-60YL.pdf
PSMN013-60YLX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 53A; Idm: 212A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 53A
Pulsed drain current: 212A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 12.1mΩ
Mounting: SMD
Gate charge: 33.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3 Stücke:
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PSMN0R9-25YLC,115 PSMN0R9-25YLC.115.pdf
PSMN0R9-25YLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 272W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 272W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.125mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1029 Stücke:
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30+2.84 EUR
34+2.55 EUR
40+2.14 EUR
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500+1.7 EUR
1000+1.54 EUR
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PSMN013-30YLC,115 PSMN013-30YLC.pdf
PSMN013-30YLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 26W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 26W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 27.2mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1708 Stücke:
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103+0.83 EUR
119+0.71 EUR
131+0.65 EUR
181+0.48 EUR
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500+0.39 EUR
1000+0.38 EUR
1500+0.33 EUR
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PSMN0R9-30YLDX PSMN0R9-30YLD.pdf
PSMN0R9-30YLDX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 284A; Idm: 1.8kA; 291W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 284A
Pulsed drain current: 1.8kA
Power dissipation: 291W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 1.44mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1327 Stücke:
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28+3.09 EUR
29+3 EUR
30+2.88 EUR
100+2.8 EUR
250+2.69 EUR
500+2.62 EUR
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PSMN030-60YS,115 PSMN030-60YS.pdf
PSMN030-60YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29A; Idm: 116A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 29A
Pulsed drain current: 116A
Power dissipation: 56W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 49.6mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1388 Stücke:
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105+0.82 EUR
139+0.62 EUR
154+0.55 EUR
167+0.51 EUR
250+0.49 EUR
500+0.44 EUR
1000+0.43 EUR
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PSMN1R2-25YLC,115 PSMN1R2-25YLC.pdf
PSMN1R2-25YLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 1133A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 1133A
Power dissipation: 179W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1391 Stücke:
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69+1.24 EUR
80+1.07 EUR
100+1.02 EUR
250+0.94 EUR
500+0.9 EUR
1000+0.82 EUR
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PSMN038-100YLX PSMN038-100YL.pdf
PSMN038-100YLX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21.3A; Idm: 120A; 94.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21.3A
Pulsed drain current: 120A
Power dissipation: 94.9W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 103.5mΩ
Mounting: SMD
Gate charge: 39.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 589 Stücke:
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70+1.23 EUR
94+0.92 EUR
103+0.82 EUR
112+0.76 EUR
250+0.73 EUR
500+0.65 EUR
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PSMN4R6-60BS,118 PSMN4R6-60BS.pdf
PSMN4R6-60BS,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 565A
Power dissipation: 211W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 70.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 671 Stücke:
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25+3.47 EUR
33+2.61 EUR
37+2.34 EUR
100+2.18 EUR
250+2.07 EUR
500+1.87 EUR
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PSMN2R0-30YLE,115 PSMN2R0-30YLE.pdf
PSMN2R0-30YLE,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1015A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1015A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1314 Stücke:
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44+1.98 EUR
48+1.78 EUR
52+1.65 EUR
100+1.57 EUR
250+1.43 EUR
500+1.39 EUR
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PSMN3R0-60PS,127 PSMN3R0-60PS.pdf
PSMN3R0-60PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 824A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 824A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 15 Stücke:
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15+5.66 EUR
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PSMN3R9-60PSQ PSMN3R9-60PS.pdf
PSMN3R9-60PSQ
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 705A; 263W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Pulsed drain current: 705A
Power dissipation: 263W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.94mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 66 Stücke:
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PSMN2R0-30PL,127 PSMN2R0-30PL.pdf
PSMN2R0-30PL,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 211W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 40 Stücke:
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PSMN7R0-30YLC,115 PSMN7R0-30YLC.pdf
PSMN7R0-30YLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 245A
Power dissipation: 48W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1390 Stücke:
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PSMN012-100YS,115 PSMN012-100YS.pdf
PSMN012-100YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 35.8mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1369 Stücke:
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32+2.69 EUR
43+1.99 EUR
52+1.67 EUR
100+1.5 EUR
250+1.39 EUR
500+1.33 EUR
1000+1.19 EUR
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PSMN017-30PL,127 PSMN017-30PL.pdf
PSMN017-30PL,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 152A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 152A
Power dissipation: 45W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 5.1nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 13 Stücke:
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13+6.56 EUR
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PSMN8R0-40PS,127 PSMN8R0-40PS.pdf
PSMN8R0-40PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 67 Stücke:
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67+1.27 EUR
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PSMN1R1-30PL,127 PSMN1R1-30PL.pdf
PSMN1R1-30PL,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Pulsed drain current: 1609A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 243nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 32 Stücke:
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14+6.18 EUR
16+5.45 EUR
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PSMN7R0-60YS,115 PSMN7R0-60YS.pdf
PSMN7R0-60YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 14.7mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1422 Stücke:
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33+2.61 EUR
44+1.94 EUR
49+1.75 EUR
100+1.63 EUR
250+1.57 EUR
500+1.39 EUR
1000+1.33 EUR
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PSMN1R8-80SSFJ PSMN1R8-80SSF.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 205A; Idm: 1158A; 341W
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 222nC
On-state resistance: 4.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 341W
Pulsed drain current: 1158A
Drain current: 205A
Case: LFPAK88; SOT1235
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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PSMN1R2-25YLDX PSMN1R2-25YLD.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 205A; Idm: 1163A
Technology: NextPowerS3
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 60.3nC
On-state resistance: 2.87mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Power dissipation: 172W
Pulsed drain current: 1163A
Drain current: 205A
Case: LFPAK56; PowerSO8; SOT669
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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74LV4060PW,112 74LV4060.pdf
74LV4060PW,112
Hersteller: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter; TTL; SMD; TSSOP16; LV; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: 14bit; binary counter
Mounting: SMD
Case: TSSOP16
Family: LV
Kind of package: tube
Operating temperature: -40...125°C
Supply voltage: 1...5.5V DC
Technology: TTL
auf Bestellung 232 Stücke:
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122+0.7 EUR
137+0.62 EUR
148+0.57 EUR
155+0.55 EUR
192+0.49 EUR
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74LV4060DB,112 74LV4060.pdf
74LV4060DB,112
Hersteller: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter; TTL; SMD; SSOP16; LV; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: 14bit; binary counter
Mounting: SMD
Case: SSOP16
Family: LV
Kind of package: tube
Operating temperature: -40...125°C
Supply voltage: 1...5.5V DC
Technology: TTL
auf Bestellung 141 Stücke:
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120+0.71 EUR
141+0.6 EUR
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PUMH17,115 PEMH17_PUMH17.pdf
PUMH17,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 47kΩ; R2: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Frequency: 230MHz
Produkt ist nicht verfügbar
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PUMH13,115 PEMH13_PUMH13.pdf
PUMH13,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 18046 Stücke:
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625+0.13 EUR
794+0.11 EUR
926+0.092 EUR
1185+0.071 EUR
1578+0.054 EUR
1774+0.048 EUR
1894+0.045 EUR
3000+0.042 EUR
6000+0.039 EUR
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PUMH10,115 PEMH10_PUMH10.pdf
PUMH10,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 230MHz
auf Bestellung 4804 Stücke:
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500+0.17 EUR
685+0.12 EUR
834+0.1 EUR
973+0.088 EUR
1134+0.075 EUR
1374+0.062 EUR
1558+0.055 EUR
1656+0.051 EUR
3000+0.046 EUR
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PUMH1,115 PEMH1_PUMH1.pdf
PUMH1,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 22kΩ; R2: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Frequency: 230MHz
auf Bestellung 658 Stücke:
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500+0.17 EUR
658+0.13 EUR
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PUMH15,115 PEMH15_PUMH15.pdf
PUMH15,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Frequency: 230MHz
auf Bestellung 11 Stücke:
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11+7.75 EUR
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PUMH18,115 PEMH18_PUMH18.pdf
PUMH18,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Frequency: 230MHz
auf Bestellung 595 Stücke:
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417+0.2 EUR
595+0.14 EUR
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PUMH19,115 PEMH19_PUMH19.pdf
PUMH19,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Frequency: 230MHz
auf Bestellung 5533 Stücke:
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1000+0.086 EUR
1220+0.07 EUR
1624+0.052 EUR
1786+0.048 EUR
1931+0.044 EUR
2025+0.042 EUR
2253+0.038 EUR
3000+0.037 EUR
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PUMH10-QX PUMH10-Q.pdf
PUMH10-QX
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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PUMH1-QX PUMH1-Q.pdf
PUMH1-QX
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 10kΩ; R2: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Frequency: 230MHz
Produkt ist nicht verfügbar
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PUMH10,125 PUMH10.pdf
PUMH10,125
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 300mW; SC88,SOT363,TSSOP6
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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PUMH10Z PUMH10.pdf
PUMH10Z
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 230MHz
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PUMH15-QX PUMH15-Q.pdf
PUMH15-QX
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 4.7kΩ
Frequency: 230MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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PUMH16,115 PEMH16_PUMH16.pdf
PUMH16,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 22kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Frequency: 230MHz
Produkt ist nicht verfügbar
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PMST5551,115 PMST5551.pdf
PMST5551,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.3A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.3A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 250
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 2492 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
417+0.2 EUR
486+0.18 EUR
551+0.15 EUR
653+0.13 EUR
875+0.098 EUR
964+0.088 EUR
1053+0.081 EUR
Mindestbestellmenge: 417 Stücke
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BAS16H,115 BAS16_SER.pdf
BAS16H,115
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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74HCT4046AD,118 74HCT4046AD,118.pdf
74HCT4046AD,118
Hersteller: NEXPERIA
Category: Other logic integrated circuits
Description: IC: digital; phase-locked loop; CMOS,TTL; 4.5÷5.5VDC; SMD; SO16
Kind of package: reel; tape
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Operating temperature: -40...125°C
Technology: CMOS; TTL
Case: SO16
Family: HCT
Kind of integrated circuit: phase-locked loop
auf Bestellung 409 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
55+1.57 EUR
72+1.19 EUR
100+1.06 EUR
Mindestbestellmenge: 55 Stücke
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