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PSMN3R3-60PLQ | NEXPERIA |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 793A; 293W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 130A Pulsed drain current: 793A Power dissipation: 293W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: THT Gate charge: 175nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PSMN3R3-80BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 760A; 306W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Pulsed drain current: 760A Power dissipation: 306W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 7.1mΩ Mounting: SMD Gate charge: 111nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PSMN3R3-40MLHX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 84A; Idm: 475A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 84A Pulsed drain current: 475A Power dissipation: 101W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 9.2mΩ Mounting: SMD Gate charge: 54nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PSMN3R3-40YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 546A; 117W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 546A Power dissipation: 117W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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PSMN3R3-80PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 830A; 338W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Pulsed drain current: 830A Power dissipation: 338W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: THT Gate charge: 139nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PSMN4R5-40PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 545A; 148W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 545A Power dissipation: 148W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: THT Gate charge: 42.3nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PSMN4R5-40BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 96A; Idm: 545A; 148W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 96A Pulsed drain current: 545A Power dissipation: 148W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 8.7mΩ Mounting: SMD Gate charge: 42.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NZH16C,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123F; Ifmax: 250mA Type of diode: Zener Case: SOD123F Mounting: SMD Semiconductor structure: single diode Max. forward voltage: 0.9V Leakage current: 0.04µA Kind of package: reel; tape Zener voltage: 16V Power dissipation: 0.5W Tolerance: ±2.5% Max. load current: 0.25A |
auf Bestellung 2970 Stücke: Lieferzeit 14-21 Tag (e) |
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| PSMN2R0-30YL,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 667A; 97W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 667A Power dissipation: 97W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 1.55mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BUK964R7-80E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 667A; 324W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Pulsed drain current: 667A Power dissipation: 324W Case: D2PAK; SOT404 Gate-source voltage: ±10V On-state resistance: 11.7mΩ Mounting: SMD Gate charge: 92.1nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| 74ALVCH16841DGGY | NEXPERIA |
Category: Latches Description: IC: digital; 20bit,3-state,bus interface,D latch; Ch: 2; IN: 12 Number of inputs: 12 Supply voltage: 1.2...3.6V DC Type of integrated circuit: digital Number of channels: 2 Kind of output: 3-state Kind of package: reel; tape Technology: CMOS; TTL Kind of integrated circuit: 3-state; 20bit; bus interface; D latch Family: ALVCH Mounting: SMD Operating temperature: -40...85°C Case: TSSOP56 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BZT52-C13X | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 13V; SMD; reel,tape; SOD123; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.35W Zener voltage: 13V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Max. load current: 0.25A Max. forward voltage: 0.9V |
auf Bestellung 5735 Stücke: Lieferzeit 14-21 Tag (e) |
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| 74LVC2G04GW-Q100H | NEXPERIA |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
auf Bestellung 155500 Stücke: Lieferzeit 14-21 Tag (e) |
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74HCT03PW,118 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Family: HCT Delay time: 36ns Kind of output: open drain Kind of package: reel; tape Quiescent current: 40µA Technology: CMOS; TTL Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TDZ20J,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 20V; SMD; reel,tape; SOD323F; Ifmax: 250mA Power dissipation: 0.5W Case: SOD323F Mounting: SMD Kind of package: reel; tape Max. load current: 0.25A Max. forward voltage: 1.1V Semiconductor structure: single diode Zener voltage: 20V Leakage current: 50nA Type of diode: Zener Tolerance: ±2% |
auf Bestellung 1239 Stücke: Lieferzeit 14-21 Tag (e) |
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| 74AVC20T245DGG,118 | NEXPERIA |
Category: Level translators Description: IC: digital; 20bit,3-state,transceiver,translator; Ch: 2; SMD Type of integrated circuit: digital Operating temperature: -40...125°C Case: TSSOP56 Supply voltage: 0.8...3.6V DC Number of channels: 2 Kind of output: 3-state Kind of package: reel; tape Technology: CMOS; TTL Kind of integrated circuit: 3-state; 20bit; transceiver; translator Family: AVC Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PBSS5350D,115 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP Type of transistor: PNP |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BAS516,315 | NEXPERIA |
Category: SMD universal diodes Description: Diode: switching Type of diode: switching |
auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BAS516,135 | NEXPERIA |
Category: SMD universal diodes Description: Diode: switching Type of diode: switching |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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RB520S30,115 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.2A; reel,tape Case: SC79; SOD523 Capacitance: 20pF Max. off-state voltage: 30V Max. forward voltage: 0.6V Load current: 0.2A Semiconductor structure: single diode Max. forward impulse current: 1A Leakage current: 1µA Power dissipation: 0.5W Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RB521CS30L,315 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN1006-2,SOD882; SMD; 30V; 0.1A Case: DFN1006-2; SOD882 Capacitance: 8pF Max. off-state voltage: 30V Max. forward voltage: 0.405V Load current: 0.1A Semiconductor structure: single diode Max. forward impulse current: 3A Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RB521S30,115 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SC79,SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SC79; SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.5V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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74LVC86AD,118 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 1.2÷3.6VDC; 40uA Type of integrated circuit: digital Operating temperature: -40...125°C Case: SO14 Number of inputs: 2 Supply voltage: 1.2...3.6V DC Number of channels: quad; 4 Quiescent current: 40µA Delay time: 11.4ns Kind of package: reel; tape Kind of gate: XOR Technology: CMOS; TTL Family: LVC Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| 74LVC86ABQ,115 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; 1.2÷3.6VDC Type of integrated circuit: digital Operating temperature: -40...125°C Case: DHVQFN14 Number of inputs: 2 Supply voltage: 1.2...3.6V DC Number of channels: quad; 4 Quiescent current: 40µA Delay time: 11.4ns Kind of package: reel; tape Kind of gate: XOR Technology: CMOS; TTL Family: LVC Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BZX84-C2V4-QR | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 2.4V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 2.4V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| 74HC595PW-Q100,118 | NEXPERIA |
Category: Shift registers Description: IC: digital Type of integrated circuit: digital |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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PDTD113ZUX | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 300mW; SC70,SOT323; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.3W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 225MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
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PDTA113ZU,115 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; R1: 1kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 1kΩ Base-emitter resistor: 10kΩ Current gain: 35 |
Produkt ist nicht verfügbar |
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MMBZ6V8AL,215 | NEXPERIA |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.8V; 40W; unidirectional,double,common anode Type of diode: TVS array Case: SOT23 Max. off-state voltage: 4.5V Semiconductor structure: common anode; double; unidirectional Breakdown voltage: 6.8V Leakage current: 10nA Number of channels: 2 Version: ESD Peak pulse power dissipation: 40W Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MMBZ5V6AL,215 | NEXPERIA |
Category: Protection diodes - arrays Description: Diode: TVS array; 5.6V; 40W; unidirectional,double,common anode Type of diode: TVS array Breakdown voltage: 5.6V Peak pulse power dissipation: 40W Semiconductor structure: common anode; double; unidirectional Mounting: SMD Case: SOT23 Max. off-state voltage: 3V Number of channels: 2 Leakage current: 240nA Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PMEG2020AEA,115 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 2A; reel,tape Type of diode: Schottky rectifying Case: SOD323 Mounting: SMD Max. off-state voltage: 20V Load current: 2A Semiconductor structure: single diode Kind of package: reel; tape Max. forward voltage: 0.525V Max. forward impulse current: 9A Leakage current: 0.2mA Capacitance: 70pF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PMEG2020EH,115 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 2A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 20V Load current: 2A Semiconductor structure: single diode Kind of package: reel; tape Max. forward voltage: 0.525V Max. load current: 7A Max. forward impulse current: 9A Capacitance: 60pF |
Produkt ist nicht verfügbar |
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| PMEG2020EJ,115 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 20V; 2A; reel,tape Type of diode: Schottky rectifying Case: SC90; SOD323F Mounting: SMD Max. off-state voltage: 20V Load current: 2A Semiconductor structure: single diode Kind of package: reel; tape Max. forward voltage: 0.525V Capacitance: 60pF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PMEG2020EJF | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 20V; 2A; reel,tape Type of diode: Schottky rectifying Case: SC90; SOD323F Mounting: SMD Max. off-state voltage: 20V Load current: 2A Semiconductor structure: single diode Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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PTVS24VS1UTR,115 | NEXPERIA |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 400W; 28.1V; 10.3A; unidirectional; SOD123W; max.185°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 28.1V Max. forward impulse current: 10.3A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 1nA Operating temperature: max. 185°C |
auf Bestellung 3285 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4730A,113 | NEXPERIA |
Category: THT Zener diodes Description: Diode: Zener; 1W; 3.9V; 234mA; reel,tape; DO41; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 3.9V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1mA Max. forward voltage: 1.2V Zener current: 234mA Kind of package: reel; tape Max. load current: 0.5A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| 1N4730A,133 | NEXPERIA |
Category: THT Zener diodes Description: Diode: Zener; 1W; 3.9V; 234mA; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 3.9V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 50µA Max. forward voltage: 1.2V Zener current: 234mA Kind of package: Ammo Pack Max. load current: 0.5A |
Produkt ist nicht verfügbar |
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PESD5V0L5UY,125 | NEXPERIA |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.4÷7.2V; 2.5A; 25W; SC88,SOT363,TSSOP6; ESD Type of diode: TVS array Max. off-state voltage: 5V Breakdown voltage: 6.4...7.2V Max. forward impulse current: 2.5A Semiconductor structure: common anode; fivefold; unidirectional Case: SC88; SOT363; TSSOP6 Mounting: SMD Leakage current: 25nA Version: ESD Peak pulse power dissipation: 25W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PESD5V0S1USF,315 | NEXPERIA |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 35W; 6÷8V; unidirectional; DSN0603-2,SOD962-2; ESD Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 6...8V Semiconductor structure: unidirectional Case: DSN0603-2; SOD962-2 Mounting: SMD Leakage current: 0.1µA Version: ESD Peak pulse power dissipation: 35W |
Produkt ist nicht verfügbar |
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PESD5V0U4BF,115 | NEXPERIA |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 5.5÷9.5V; bidirectional; SOT886; ESD Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 5.5...9.5V Semiconductor structure: bidirectional Case: SOT886 Mounting: SMD Leakage current: 0.1µA Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PESD5V0X1BCAL,315 | NEXPERIA |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 8.1÷12.3V; bidirectional; DFN1006-2,SOD882; ESD Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 8.1...12.3V Semiconductor structure: bidirectional Case: DFN1006-2; SOD882 Mounting: SMD Leakage current: 10nA Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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74HCT1G04GW,125 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; TSSOP5; Mini Logic; 2÷6VDC Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Technology: CMOS; TTL Mounting: SMD Case: TSSOP5 Manufacturer series: Mini Logic Supply voltage: 2...6V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: HCT |
auf Bestellung 91 Stücke: Lieferzeit 14-21 Tag (e) |
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PESD3V3S4UD,115 | NEXPERIA |
Category: Protection diodes - arrays Description: Diode: TVS array; 5.6V; 200W; SC74,SOT457,TSOP6; ESD Type of diode: TVS array Case: SC74; SOT457; TSOP6 Max. off-state voltage: 3.3V Semiconductor structure: common anode; quadruple; unidirectional Breakdown voltage: 5.6V Leakage current: 0.8µA Version: ESD Peak pulse power dissipation: 0.2kW Mounting: SMD |
auf Bestellung 1434 Stücke: Lieferzeit 14-21 Tag (e) |
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PESD3V3L4UW,115 | NEXPERIA |
Category: Protection diodes - arrays Description: Diode: TVS array; 5.6V; 3.5A; SOT665; ESD Type of diode: TVS array Case: SOT665 Capacitance: 28pF Max. off-state voltage: 3.3V Semiconductor structure: common anode; quadruple; unidirectional Max. forward impulse current: 3.5A Breakdown voltage: 5.6V Leakage current: 0.3µA Version: ESD Mounting: SMD |
auf Bestellung 2961 Stücke: Lieferzeit 14-21 Tag (e) |
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PESD3V3V1BLYL | NEXPERIA |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 4.5V; bidirectional; DFN1006-2,SOD882; ESD Type of diode: TVS Case: DFN1006-2; SOD882 Max. off-state voltage: 3.3V Semiconductor structure: bidirectional Breakdown voltage: 4.5V Leakage current: 10nA Version: ESD Mounting: SMD |
Produkt ist nicht verfügbar |
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PESD3V3L1UL,315 | NEXPERIA |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 45W; 5.3÷6V; 4.5A; unidirectional; DFN1006-2,SOD882 Type of diode: TVS Case: DFN1006-2; SOD882 Max. off-state voltage: 3.3V Semiconductor structure: unidirectional Max. forward impulse current: 4.5A Breakdown voltage: 5.3...6V Leakage current: 0.3µA Version: ESD Peak pulse power dissipation: 45W Mounting: SMD |
Produkt ist nicht verfügbar |
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PESD3V3X1BCSFYL | NEXPERIA |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 10V; 8A; bidirectional; DSN0603-2,SOD962-2; ESD Type of diode: TVS Case: DSN0603-2; SOD962-2 Max. off-state voltage: 3.3V Semiconductor structure: bidirectional Max. forward impulse current: 8A Breakdown voltage: 10V Leakage current: 0.1µA Version: ESD Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PESD3V3L4UF,115 | NEXPERIA |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 30W; 5.32÷5.88V; 3A; unidirectional; SOT886; ESD Type of diode: TVS Case: SOT886 Max. off-state voltage: 3.3V Semiconductor structure: unidirectional Max. forward impulse current: 3A Breakdown voltage: 5.32...5.88V Leakage current: 0.3µA Version: ESD Peak pulse power dissipation: 30W Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PESD3V3L2UM,315 | NEXPERIA |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 30W; 5.32÷5.88V; 3A; unidirectional; SOT883; ESD Type of diode: TVS Case: SOT883 Max. off-state voltage: 3.3V Semiconductor structure: unidirectional Max. forward impulse current: 3A Breakdown voltage: 5.32...5.88V Leakage current: 0.3µA Version: ESD Peak pulse power dissipation: 30W Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PESD3V3S2UQ,115 | NEXPERIA |
Category: Protection diodes - arrays Description: Diode: TVS array; 5.2÷6V; 15A; 150W; common anode; SOT663; Ch: 2; ESD Type of diode: TVS array Case: SOT663 Capacitance: 275pF Max. off-state voltage: 3.3V Semiconductor structure: common anode Max. forward impulse current: 15A Breakdown voltage: 5.2...6V Leakage current: 3µA Number of channels: 2 Version: ESD Peak pulse power dissipation: 0.15kW Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PESD3V3S2UAT,215 | NEXPERIA |
Category: Protection diodes - arrays Description: Diode: TVS array; 5.2÷6V; 18A; 330W; common cathode; SOT23; Ch: 2 Type of diode: TVS array Case: SOT23 Capacitance: 300pF Max. off-state voltage: 3.3V Semiconductor structure: common cathode Max. forward impulse current: 18A Breakdown voltage: 5.2...6V Leakage current: 2µA Number of channels: 2 Version: ESD Peak pulse power dissipation: 330W Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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|
PESD3V3X1BL,315 | NEXPERIA |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 5÷7.8V; bidirectional; DFN1006-2,SOD882; ESD Type of diode: TVS Case: DFN1006-2; SOD882 Max. off-state voltage: 3.3V Semiconductor structure: bidirectional Breakdown voltage: 5...7.8V Leakage current: 0.1µA Version: ESD Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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|
PESD3V3Z1BCSFYL | NEXPERIA |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 6.8V; 15A; bidirectional; DSN0603-2,SOD962-2; ESD Type of diode: TVS Case: DSN0603-2; SOD962-2 Max. off-state voltage: 3.3V Semiconductor structure: bidirectional Max. forward impulse current: 15A Breakdown voltage: 6.8V Leakage current: 50nA Version: ESD Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PESD3V3L1UB,115 | NEXPERIA |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS Type of diode: TVS |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PESD3V3Z1BSFYL | NEXPERIA |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS Type of diode: TVS |
auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PESD3V3F2UTR | NEXPERIA |
Category: Protection diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PESD5V0U2BM,315 | NEXPERIA |
Category: Bidirectional TVS SMD diodes Description: PESD5V0U2BM,315 |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PESD5V0F1BL-QYL | NEXPERIA |
Category: Unclassified Description: PESD5V0F1BL-QYL |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
|
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| PMEG4010CEGW-QX | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying Type of diode: Schottky rectifying |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
|
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| PMEG4010ER-QX | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying Type of diode: Schottky rectifying |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| PSMN3R3-60PLQ |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 793A; 293W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Pulsed drain current: 793A
Power dissipation: 293W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 175nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 793A; 293W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Pulsed drain current: 793A
Power dissipation: 293W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 175nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PSMN3R3-80BS,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 760A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 760A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 7.1mΩ
Mounting: SMD
Gate charge: 111nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 760A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 760A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 7.1mΩ
Mounting: SMD
Gate charge: 111nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PSMN3R3-40MLHX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 84A; Idm: 475A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 84A
Pulsed drain current: 475A
Power dissipation: 101W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 84A; Idm: 475A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 84A
Pulsed drain current: 475A
Power dissipation: 101W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PSMN3R3-40YS,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 546A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 546A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 546A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 546A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PSMN3R3-80PS,127 |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 830A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 830A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 139nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 830A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 830A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 139nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PSMN4R5-40PS,127 |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 545A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 545A
Power dissipation: 148W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Gate charge: 42.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 545A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 545A
Power dissipation: 148W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Gate charge: 42.3nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PSMN4R5-40BS,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 96A; Idm: 545A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 96A
Pulsed drain current: 545A
Power dissipation: 148W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: SMD
Gate charge: 42.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 96A; Idm: 545A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 96A
Pulsed drain current: 545A
Power dissipation: 148W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: SMD
Gate charge: 42.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NZH16C,115 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123F; Ifmax: 250mA
Type of diode: Zener
Case: SOD123F
Mounting: SMD
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Leakage current: 0.04µA
Kind of package: reel; tape
Zener voltage: 16V
Power dissipation: 0.5W
Tolerance: ±2.5%
Max. load current: 0.25A
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123F; Ifmax: 250mA
Type of diode: Zener
Case: SOD123F
Mounting: SMD
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Leakage current: 0.04µA
Kind of package: reel; tape
Zener voltage: 16V
Power dissipation: 0.5W
Tolerance: ±2.5%
Max. load current: 0.25A
auf Bestellung 2970 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.20 EUR |
| 550+ | 0.13 EUR |
| 900+ | 0.08 EUR |
| 923+ | 0.08 EUR |
| 1169+ | 0.06 EUR |
| 1378+ | 0.05 EUR |
| 1454+ | 0.05 EUR |
| PSMN2R0-30YL,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 667A; 97W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 667A
Power dissipation: 97W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 667A; 97W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 667A
Power dissipation: 97W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK964R7-80E,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 667A; 324W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 667A
Power dissipation: 324W
Case: D2PAK; SOT404
Gate-source voltage: ±10V
On-state resistance: 11.7mΩ
Mounting: SMD
Gate charge: 92.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 667A; 324W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 667A
Power dissipation: 324W
Case: D2PAK; SOT404
Gate-source voltage: ±10V
On-state resistance: 11.7mΩ
Mounting: SMD
Gate charge: 92.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74ALVCH16841DGGY |
|
Hersteller: NEXPERIA
Category: Latches
Description: IC: digital; 20bit,3-state,bus interface,D latch; Ch: 2; IN: 12
Number of inputs: 12
Supply voltage: 1.2...3.6V DC
Type of integrated circuit: digital
Number of channels: 2
Kind of output: 3-state
Kind of package: reel; tape
Technology: CMOS; TTL
Kind of integrated circuit: 3-state; 20bit; bus interface; D latch
Family: ALVCH
Mounting: SMD
Operating temperature: -40...85°C
Case: TSSOP56
Category: Latches
Description: IC: digital; 20bit,3-state,bus interface,D latch; Ch: 2; IN: 12
Number of inputs: 12
Supply voltage: 1.2...3.6V DC
Type of integrated circuit: digital
Number of channels: 2
Kind of output: 3-state
Kind of package: reel; tape
Technology: CMOS; TTL
Kind of integrated circuit: 3-state; 20bit; bus interface; D latch
Family: ALVCH
Mounting: SMD
Operating temperature: -40...85°C
Case: TSSOP56
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZT52-C13X |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 13V; SMD; reel,tape; SOD123; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 13V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Max. load current: 0.25A
Max. forward voltage: 0.9V
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 13V; SMD; reel,tape; SOD123; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 13V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Max. load current: 0.25A
Max. forward voltage: 0.9V
auf Bestellung 5735 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1670+ | 0.04 EUR |
| 1855+ | 0.04 EUR |
| 2105+ | 0.03 EUR |
| 2330+ | 0.03 EUR |
| 2465+ | 0.03 EUR |
| 74LVC2G04GW-Q100H |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 155500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.10 EUR |
| 74HCT03PW,118 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Family: HCT
Delay time: 36ns
Kind of output: open drain
Kind of package: reel; tape
Quiescent current: 40µA
Technology: CMOS; TTL
Operating temperature: -40...125°C
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Family: HCT
Delay time: 36ns
Kind of output: open drain
Kind of package: reel; tape
Quiescent current: 40µA
Technology: CMOS; TTL
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TDZ20J,115 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; reel,tape; SOD323F; Ifmax: 250mA
Power dissipation: 0.5W
Case: SOD323F
Mounting: SMD
Kind of package: reel; tape
Max. load current: 0.25A
Max. forward voltage: 1.1V
Semiconductor structure: single diode
Zener voltage: 20V
Leakage current: 50nA
Type of diode: Zener
Tolerance: ±2%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; reel,tape; SOD323F; Ifmax: 250mA
Power dissipation: 0.5W
Case: SOD323F
Mounting: SMD
Kind of package: reel; tape
Max. load current: 0.25A
Max. forward voltage: 1.1V
Semiconductor structure: single diode
Zener voltage: 20V
Leakage current: 50nA
Type of diode: Zener
Tolerance: ±2%
auf Bestellung 1239 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 290+ | 0.25 EUR |
| 658+ | 0.11 EUR |
| 1239+ | 0.06 EUR |
| 74AVC20T245DGG,118 |
|
Hersteller: NEXPERIA
Category: Level translators
Description: IC: digital; 20bit,3-state,transceiver,translator; Ch: 2; SMD
Type of integrated circuit: digital
Operating temperature: -40...125°C
Case: TSSOP56
Supply voltage: 0.8...3.6V DC
Number of channels: 2
Kind of output: 3-state
Kind of package: reel; tape
Technology: CMOS; TTL
Kind of integrated circuit: 3-state; 20bit; transceiver; translator
Family: AVC
Mounting: SMD
Category: Level translators
Description: IC: digital; 20bit,3-state,transceiver,translator; Ch: 2; SMD
Type of integrated circuit: digital
Operating temperature: -40...125°C
Case: TSSOP56
Supply voltage: 0.8...3.6V DC
Number of channels: 2
Kind of output: 3-state
Kind of package: reel; tape
Technology: CMOS; TTL
Kind of integrated circuit: 3-state; 20bit; transceiver; translator
Family: AVC
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PBSS5350D,115 |
|
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.14 EUR |
| BAS516,315 |
|
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 8000+ | 0.02 EUR |
| BAS516,135 |
|
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10000+ | 0.02 EUR |
| RB520S30,115 |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.2A; reel,tape
Case: SC79; SOD523
Capacitance: 20pF
Max. off-state voltage: 30V
Max. forward voltage: 0.6V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Leakage current: 1µA
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.2A; reel,tape
Case: SC79; SOD523
Capacitance: 20pF
Max. off-state voltage: 30V
Max. forward voltage: 0.6V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Leakage current: 1µA
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RB521CS30L,315 |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN1006-2,SOD882; SMD; 30V; 0.1A
Case: DFN1006-2; SOD882
Capacitance: 8pF
Max. off-state voltage: 30V
Max. forward voltage: 0.405V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward impulse current: 3A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN1006-2,SOD882; SMD; 30V; 0.1A
Case: DFN1006-2; SOD882
Capacitance: 8pF
Max. off-state voltage: 30V
Max. forward voltage: 0.405V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward impulse current: 3A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
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| RB521S30,115 |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79,SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79,SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
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| 74LVC86AD,118 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 1.2÷3.6VDC; 40uA
Type of integrated circuit: digital
Operating temperature: -40...125°C
Case: SO14
Number of inputs: 2
Supply voltage: 1.2...3.6V DC
Number of channels: quad; 4
Quiescent current: 40µA
Delay time: 11.4ns
Kind of package: reel; tape
Kind of gate: XOR
Technology: CMOS; TTL
Family: LVC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 1.2÷3.6VDC; 40uA
Type of integrated circuit: digital
Operating temperature: -40...125°C
Case: SO14
Number of inputs: 2
Supply voltage: 1.2...3.6V DC
Number of channels: quad; 4
Quiescent current: 40µA
Delay time: 11.4ns
Kind of package: reel; tape
Kind of gate: XOR
Technology: CMOS; TTL
Family: LVC
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74LVC86ABQ,115 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; 1.2÷3.6VDC
Type of integrated circuit: digital
Operating temperature: -40...125°C
Case: DHVQFN14
Number of inputs: 2
Supply voltage: 1.2...3.6V DC
Number of channels: quad; 4
Quiescent current: 40µA
Delay time: 11.4ns
Kind of package: reel; tape
Kind of gate: XOR
Technology: CMOS; TTL
Family: LVC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; 1.2÷3.6VDC
Type of integrated circuit: digital
Operating temperature: -40...125°C
Case: DHVQFN14
Number of inputs: 2
Supply voltage: 1.2...3.6V DC
Number of channels: quad; 4
Quiescent current: 40µA
Delay time: 11.4ns
Kind of package: reel; tape
Kind of gate: XOR
Technology: CMOS; TTL
Family: LVC
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
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| BZX84-C2V4-QR |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 2.4V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 2.4V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74HC595PW-Q100,118 |
|
Hersteller: NEXPERIA
Category: Shift registers
Description: IC: digital
Type of integrated circuit: digital
Category: Shift registers
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.16 EUR |
| PDTD113ZUX |
|
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 300mW; SC70,SOT323; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 225MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 300mW; SC70,SOT323; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 225MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PDTA113ZU,115 |
|
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 35
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 35
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBZ6V8AL,215 |
|
Hersteller: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 40W; unidirectional,double,common anode
Type of diode: TVS array
Case: SOT23
Max. off-state voltage: 4.5V
Semiconductor structure: common anode; double; unidirectional
Breakdown voltage: 6.8V
Leakage current: 10nA
Number of channels: 2
Version: ESD
Peak pulse power dissipation: 40W
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 40W; unidirectional,double,common anode
Type of diode: TVS array
Case: SOT23
Max. off-state voltage: 4.5V
Semiconductor structure: common anode; double; unidirectional
Breakdown voltage: 6.8V
Leakage current: 10nA
Number of channels: 2
Version: ESD
Peak pulse power dissipation: 40W
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBZ5V6AL,215 |
|
Hersteller: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 40W; unidirectional,double,common anode
Type of diode: TVS array
Breakdown voltage: 5.6V
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double; unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Number of channels: 2
Leakage current: 240nA
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 40W; unidirectional,double,common anode
Type of diode: TVS array
Breakdown voltage: 5.6V
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double; unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Number of channels: 2
Leakage current: 240nA
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMEG2020AEA,115 |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.525V
Max. forward impulse current: 9A
Leakage current: 0.2mA
Capacitance: 70pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.525V
Max. forward impulse current: 9A
Leakage current: 0.2mA
Capacitance: 70pF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMEG2020EH,115 |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.525V
Max. load current: 7A
Max. forward impulse current: 9A
Capacitance: 60pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.525V
Max. load current: 7A
Max. forward impulse current: 9A
Capacitance: 60pF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMEG2020EJ,115 |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.525V
Capacitance: 60pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.525V
Capacitance: 60pF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMEG2020EJF |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PTVS24VS1UTR,115 |
|
Hersteller: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.1V; 10.3A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.1V; 10.3A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
auf Bestellung 3285 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.50 EUR |
| 213+ | 0.34 EUR |
| 307+ | 0.23 EUR |
| 486+ | 0.15 EUR |
| 516+ | 0.14 EUR |
| 1N4730A,113 |
|
Hersteller: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 3.9V; 234mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.9V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1mA
Max. forward voltage: 1.2V
Zener current: 234mA
Kind of package: reel; tape
Max. load current: 0.5A
Category: THT Zener diodes
Description: Diode: Zener; 1W; 3.9V; 234mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.9V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1mA
Max. forward voltage: 1.2V
Zener current: 234mA
Kind of package: reel; tape
Max. load current: 0.5A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4730A,133 |
|
Hersteller: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 3.9V; 234mA; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.9V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50µA
Max. forward voltage: 1.2V
Zener current: 234mA
Kind of package: Ammo Pack
Max. load current: 0.5A
Category: THT Zener diodes
Description: Diode: Zener; 1W; 3.9V; 234mA; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.9V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50µA
Max. forward voltage: 1.2V
Zener current: 234mA
Kind of package: Ammo Pack
Max. load current: 0.5A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PESD5V0L5UY,125 |
|
Hersteller: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.2V; 2.5A; 25W; SC88,SOT363,TSSOP6; ESD
Type of diode: TVS array
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.2V
Max. forward impulse current: 2.5A
Semiconductor structure: common anode; fivefold; unidirectional
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Leakage current: 25nA
Version: ESD
Peak pulse power dissipation: 25W
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.2V; 2.5A; 25W; SC88,SOT363,TSSOP6; ESD
Type of diode: TVS array
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.2V
Max. forward impulse current: 2.5A
Semiconductor structure: common anode; fivefold; unidirectional
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Leakage current: 25nA
Version: ESD
Peak pulse power dissipation: 25W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PESD5V0S1USF,315 |
|
Hersteller: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 35W; 6÷8V; unidirectional; DSN0603-2,SOD962-2; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6...8V
Semiconductor structure: unidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 0.1µA
Version: ESD
Peak pulse power dissipation: 35W
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 35W; 6÷8V; unidirectional; DSN0603-2,SOD962-2; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6...8V
Semiconductor structure: unidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 0.1µA
Version: ESD
Peak pulse power dissipation: 35W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PESD5V0U4BF,115 |
|
Hersteller: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5÷9.5V; bidirectional; SOT886; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5...9.5V
Semiconductor structure: bidirectional
Case: SOT886
Mounting: SMD
Leakage current: 0.1µA
Version: ESD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5÷9.5V; bidirectional; SOT886; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5...9.5V
Semiconductor structure: bidirectional
Case: SOT886
Mounting: SMD
Leakage current: 0.1µA
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PESD5V0X1BCAL,315 |
|
Hersteller: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 8.1÷12.3V; bidirectional; DFN1006-2,SOD882; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 8.1...12.3V
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 10nA
Version: ESD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 8.1÷12.3V; bidirectional; DFN1006-2,SOD882; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 8.1...12.3V
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 10nA
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74HCT1G04GW,125 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; TSSOP5; Mini Logic; 2÷6VDC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP5
Manufacturer series: Mini Logic
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HCT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; TSSOP5; Mini Logic; 2÷6VDC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP5
Manufacturer series: Mini Logic
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HCT
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 91+ | 0.79 EUR |
| PESD3V3S4UD,115 |
|
Hersteller: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 200W; SC74,SOT457,TSOP6; ESD
Type of diode: TVS array
Case: SC74; SOT457; TSOP6
Max. off-state voltage: 3.3V
Semiconductor structure: common anode; quadruple; unidirectional
Breakdown voltage: 5.6V
Leakage current: 0.8µA
Version: ESD
Peak pulse power dissipation: 0.2kW
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 200W; SC74,SOT457,TSOP6; ESD
Type of diode: TVS array
Case: SC74; SOT457; TSOP6
Max. off-state voltage: 3.3V
Semiconductor structure: common anode; quadruple; unidirectional
Breakdown voltage: 5.6V
Leakage current: 0.8µA
Version: ESD
Peak pulse power dissipation: 0.2kW
Mounting: SMD
auf Bestellung 1434 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 155+ | 0.46 EUR |
| 222+ | 0.32 EUR |
| 417+ | 0.17 EUR |
| 443+ | 0.16 EUR |
| PESD3V3L4UW,115 |
|
Hersteller: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 3.5A; SOT665; ESD
Type of diode: TVS array
Case: SOT665
Capacitance: 28pF
Max. off-state voltage: 3.3V
Semiconductor structure: common anode; quadruple; unidirectional
Max. forward impulse current: 3.5A
Breakdown voltage: 5.6V
Leakage current: 0.3µA
Version: ESD
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 3.5A; SOT665; ESD
Type of diode: TVS array
Case: SOT665
Capacitance: 28pF
Max. off-state voltage: 3.3V
Semiconductor structure: common anode; quadruple; unidirectional
Max. forward impulse current: 3.5A
Breakdown voltage: 5.6V
Leakage current: 0.3µA
Version: ESD
Mounting: SMD
auf Bestellung 2961 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.30 EUR |
| 336+ | 0.21 EUR |
| 442+ | 0.16 EUR |
| 678+ | 0.11 EUR |
| 875+ | 0.08 EUR |
| 925+ | 0.08 EUR |
| 1000+ | 0.07 EUR |
| PESD3V3V1BLYL |
|
Hersteller: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 4.5V; bidirectional; DFN1006-2,SOD882; ESD
Type of diode: TVS
Case: DFN1006-2; SOD882
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Breakdown voltage: 4.5V
Leakage current: 10nA
Version: ESD
Mounting: SMD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 4.5V; bidirectional; DFN1006-2,SOD882; ESD
Type of diode: TVS
Case: DFN1006-2; SOD882
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Breakdown voltage: 4.5V
Leakage current: 10nA
Version: ESD
Mounting: SMD
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| PESD3V3L1UL,315 |
|
Hersteller: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 45W; 5.3÷6V; 4.5A; unidirectional; DFN1006-2,SOD882
Type of diode: TVS
Case: DFN1006-2; SOD882
Max. off-state voltage: 3.3V
Semiconductor structure: unidirectional
Max. forward impulse current: 4.5A
Breakdown voltage: 5.3...6V
Leakage current: 0.3µA
Version: ESD
Peak pulse power dissipation: 45W
Mounting: SMD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 45W; 5.3÷6V; 4.5A; unidirectional; DFN1006-2,SOD882
Type of diode: TVS
Case: DFN1006-2; SOD882
Max. off-state voltage: 3.3V
Semiconductor structure: unidirectional
Max. forward impulse current: 4.5A
Breakdown voltage: 5.3...6V
Leakage current: 0.3µA
Version: ESD
Peak pulse power dissipation: 45W
Mounting: SMD
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| PESD3V3X1BCSFYL |
|
Hersteller: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 10V; 8A; bidirectional; DSN0603-2,SOD962-2; ESD
Type of diode: TVS
Case: DSN0603-2; SOD962-2
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Max. forward impulse current: 8A
Breakdown voltage: 10V
Leakage current: 0.1µA
Version: ESD
Mounting: SMD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 10V; 8A; bidirectional; DSN0603-2,SOD962-2; ESD
Type of diode: TVS
Case: DSN0603-2; SOD962-2
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Max. forward impulse current: 8A
Breakdown voltage: 10V
Leakage current: 0.1µA
Version: ESD
Mounting: SMD
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| PESD3V3L4UF,115 |
|
Hersteller: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 30W; 5.32÷5.88V; 3A; unidirectional; SOT886; ESD
Type of diode: TVS
Case: SOT886
Max. off-state voltage: 3.3V
Semiconductor structure: unidirectional
Max. forward impulse current: 3A
Breakdown voltage: 5.32...5.88V
Leakage current: 0.3µA
Version: ESD
Peak pulse power dissipation: 30W
Mounting: SMD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 30W; 5.32÷5.88V; 3A; unidirectional; SOT886; ESD
Type of diode: TVS
Case: SOT886
Max. off-state voltage: 3.3V
Semiconductor structure: unidirectional
Max. forward impulse current: 3A
Breakdown voltage: 5.32...5.88V
Leakage current: 0.3µA
Version: ESD
Peak pulse power dissipation: 30W
Mounting: SMD
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| PESD3V3L2UM,315 |
|
Hersteller: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 30W; 5.32÷5.88V; 3A; unidirectional; SOT883; ESD
Type of diode: TVS
Case: SOT883
Max. off-state voltage: 3.3V
Semiconductor structure: unidirectional
Max. forward impulse current: 3A
Breakdown voltage: 5.32...5.88V
Leakage current: 0.3µA
Version: ESD
Peak pulse power dissipation: 30W
Mounting: SMD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 30W; 5.32÷5.88V; 3A; unidirectional; SOT883; ESD
Type of diode: TVS
Case: SOT883
Max. off-state voltage: 3.3V
Semiconductor structure: unidirectional
Max. forward impulse current: 3A
Breakdown voltage: 5.32...5.88V
Leakage current: 0.3µA
Version: ESD
Peak pulse power dissipation: 30W
Mounting: SMD
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| PESD3V3S2UQ,115 |
|
Hersteller: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.2÷6V; 15A; 150W; common anode; SOT663; Ch: 2; ESD
Type of diode: TVS array
Case: SOT663
Capacitance: 275pF
Max. off-state voltage: 3.3V
Semiconductor structure: common anode
Max. forward impulse current: 15A
Breakdown voltage: 5.2...6V
Leakage current: 3µA
Number of channels: 2
Version: ESD
Peak pulse power dissipation: 0.15kW
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.2÷6V; 15A; 150W; common anode; SOT663; Ch: 2; ESD
Type of diode: TVS array
Case: SOT663
Capacitance: 275pF
Max. off-state voltage: 3.3V
Semiconductor structure: common anode
Max. forward impulse current: 15A
Breakdown voltage: 5.2...6V
Leakage current: 3µA
Number of channels: 2
Version: ESD
Peak pulse power dissipation: 0.15kW
Mounting: SMD
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| PESD3V3S2UAT,215 |
|
Hersteller: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.2÷6V; 18A; 330W; common cathode; SOT23; Ch: 2
Type of diode: TVS array
Case: SOT23
Capacitance: 300pF
Max. off-state voltage: 3.3V
Semiconductor structure: common cathode
Max. forward impulse current: 18A
Breakdown voltage: 5.2...6V
Leakage current: 2µA
Number of channels: 2
Version: ESD
Peak pulse power dissipation: 330W
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.2÷6V; 18A; 330W; common cathode; SOT23; Ch: 2
Type of diode: TVS array
Case: SOT23
Capacitance: 300pF
Max. off-state voltage: 3.3V
Semiconductor structure: common cathode
Max. forward impulse current: 18A
Breakdown voltage: 5.2...6V
Leakage current: 2µA
Number of channels: 2
Version: ESD
Peak pulse power dissipation: 330W
Mounting: SMD
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| PESD3V3X1BL,315 |
|
Hersteller: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5÷7.8V; bidirectional; DFN1006-2,SOD882; ESD
Type of diode: TVS
Case: DFN1006-2; SOD882
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Breakdown voltage: 5...7.8V
Leakage current: 0.1µA
Version: ESD
Mounting: SMD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5÷7.8V; bidirectional; DFN1006-2,SOD882; ESD
Type of diode: TVS
Case: DFN1006-2; SOD882
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Breakdown voltage: 5...7.8V
Leakage current: 0.1µA
Version: ESD
Mounting: SMD
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| PESD3V3Z1BCSFYL |
|
Hersteller: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.8V; 15A; bidirectional; DSN0603-2,SOD962-2; ESD
Type of diode: TVS
Case: DSN0603-2; SOD962-2
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Max. forward impulse current: 15A
Breakdown voltage: 6.8V
Leakage current: 50nA
Version: ESD
Mounting: SMD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.8V; 15A; bidirectional; DSN0603-2,SOD962-2; ESD
Type of diode: TVS
Case: DSN0603-2; SOD962-2
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Max. forward impulse current: 15A
Breakdown voltage: 6.8V
Leakage current: 50nA
Version: ESD
Mounting: SMD
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Stück im Wert von UAH
| PESD3V3L1UB,115 |
|
Hersteller: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.07 EUR |
| PESD3V3Z1BSFYL |
|
auf Bestellung 27000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 9000+ | 0.04 EUR |
| PESD3V3F2UTR |
|
Hersteller: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.09 EUR |
| PESD5V0U2BM,315 |
|
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10000+ | 0.08 EUR |
| PESD5V0F1BL-QYL |
|
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10000+ | 0.08 EUR |
| PMEG4010CEGW-QX |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.07 EUR |
| PMEG4010ER-QX |
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.10 EUR |