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PCA9673PW,118 PCA9673PW,118 NXP USA Inc. PCA9673.pdf Description: IC XPNDR 1MHZ I2C 24TSSOP
Features: POR
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 16
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Clock Frequency: 1 MHz
Interrupt Output: Yes
Supplier Device Package: 24-TSSOP
Current - Output Source/Sink: 100µA, 25mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.38 EUR
5000+2.33 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
PCA9675BQ,118 PCA9675BQ,118 NXP USA Inc. PCA9675_Rev2011.pdf Description: IC XPNDR 1MHZ I2C 24DHVQFN
Features: POR
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 16
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Clock Frequency: 1 MHz
Interrupt Output: Yes
Supplier Device Package: 24-DHVQFN (5.5x3.5)
Current - Output Source/Sink: 100µA, 25mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PCA9675DB,118 PCA9675DB,118 NXP USA Inc. PCA9675_Rev2011.pdf Description: IC XPNDR 1MHZ I2C 24SSOP
Features: POR
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 16
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Clock Frequency: 1 MHz
Interrupt Output: Yes
Supplier Device Package: 24-SSOP
Current - Output Source/Sink: 100µA, 25mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PCA9701D,112 PCA9701D,112 NXP USA Inc. PCA9701%2C02.pdf Description: IC XPNDR 5MHZ SPI SERIAL 24SO
Packaging: Tube
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: SPI Serial
Number of I/O: 16 (Input Only)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Clock Frequency: 5 MHz
Interrupt Output: Yes
Supplier Device Package: 24-SO
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PCA9701PW,112 PCA9701PW,112 NXP USA Inc. PCA9701%2C02.pdf Description: IC XPNDR 5MHZ SPI SERIAL 24TSSOP
Packaging: Tube
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: SPI Serial
Number of I/O: 16 (Input Only)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Clock Frequency: 5 MHz
Interrupt Output: Yes
Supplier Device Package: 24-TSSOP
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PCA9701PW,118 PCA9701PW,118 NXP USA Inc. PCA9701_PCA9702.pdf Description: IC XPNDR 5MHZ SPI SERIAL 24TSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: SPI Serial
Number of I/O: 16 (Input Only)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Clock Frequency: 5 MHz
Interrupt Output: Yes
Supplier Device Package: 24-TSSOP
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2586 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.10 EUR
10+2.29 EUR
25+2.08 EUR
100+1.86 EUR
250+1.75 EUR
500+1.69 EUR
1000+1.64 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
PCF2113DH/4,557 PCF2113DH/4,557 NXP USA Inc. PCF2113_FAM.pdf Description: IC DRVR MATRIX 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: I2C
Configuration: 5 x 8 (Matrix)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.2V ~ 4V
Supplier Device Package: 100-LQFP (14x14)
Part Status: Obsolete
Produkt ist nicht verfügbar
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PCF8576CH/1,157 PCF8576CH/1,157 NXP USA Inc. PCF8576C.pdf Description: IC DRVR 7 SEGMENT 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: I2C
Configuration: 7 Segment + DP, 14 Segment + DP + AP, Dot Matrix
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Digits or Characters: 10 Characters, 20 Characters, 160 Elements
Supplier Device Package: 64-LQFP (10x10)
Part Status: Obsolete
Current - Supply: 120 µA
Produkt ist nicht verfügbar
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PCF8576CH/1,118 PCF8576CH/1,118 NXP USA Inc. PCF8576C.pdf Description: IC DRVR 7 SEGMENT 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: I2C
Configuration: 7 Segment + DP, 14 Segment + DP + AP, Dot Matrix
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Digits or Characters: 10 Characters, 20 Characters, 160 Elements
Supplier Device Package: 64-LQFP (10x10)
Part Status: Obsolete
Current - Supply: 120 µA
Produkt ist nicht verfügbar
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PCF8579H/1:118 PCF8579H/1:118 NXP USA Inc. PCF8579.pdf Description: IC DRVR DOT MATRIX 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: I2C
Configuration: Dot Matrix
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 6V
Supplier Device Package: 64-LQFP (10x10)
Current - Supply: 9 µA
Produkt ist nicht verfügbar
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PCF8583BS,518 PCF8583BS,518 NXP USA Inc. PCF8583.pdf Description: IC RTC CLK/CALENDAR I2C 20HVQFN
Packaging: Tape & Reel (TR)
Features: Alarm, NVSRAM, Square Wave Output
Package / Case: 20-VQFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 240B
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 6V
Time Format: HH:MM:SS:hh (12/24 hr)
Date Format: YY-MM-DD
Supplier Device Package: 20-HVQFN (5x5)
Current - Timekeeping (Max): 10µA ~ 50µA @ 1V ~ 5V
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PDTA113EK,115 PDTA113EK,115 NXP USA Inc. PHGLS19170-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS PNP 50V 0.1A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 1.5mA, 30mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 40mA, 5V
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Produkt ist nicht verfügbar
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PDTA113ES,126 PDTA113ES,126 NXP USA Inc. PHGLS19170-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS PNP 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 1.5mA, 30mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 40mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Produkt ist nicht verfügbar
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PDTA113ZK,115 PDTA113ZK,115 NXP USA Inc. PDTA113Z_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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PDTA113ZS,126 PDTA113ZS,126 NXP USA Inc. PDTA113Z_SER.pdf Description: TRANS PREBIAS PNP 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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PDTA114YS,126 PDTA114YS,126 NXP USA Inc. Description: TRANS PREBIAS PNP 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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PDTA115ES,126 PDTA115ES,126 NXP USA Inc. PDTA115E_SERIES.pdf Description: TRANS PREBIAS PNP 500MW TO92-3
Produkt ist nicht verfügbar
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PDTA115TS,126 PDTA115TS,126 NXP USA Inc. PDTA115T_SER.pdf Description: TRANS PREBIAS PNP 500MW TO92-3
Produkt ist nicht verfügbar
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PDTA123ES,126 PDTA123ES,126 NXP USA Inc. PDTA123E_SERIES.pdf Description: TRANS PREBIAS PNP 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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PDTA123JS,126 PDTA123JS,126 NXP USA Inc. PDTA123J_Rev2004.pdf Description: TRANS PREBIAS PNP 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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PDTA123TE,115 PDTA123TE,115 NXP USA Inc. PDTA123T_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Supplier Device Package: SC-75
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 2.2 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
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PDTA123TK,115 PDTA123TK,115 NXP USA Inc. PDTA123T_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
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PDTA123YE,115 PDTA123YE,115 NXP USA Inc. PDTA123Y_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: SC-75
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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PDTA123YK,115 PDTA123YK,115 NXP USA Inc. PDTA123Y_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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PDTA123YS,126 PDTA123YS,126 NXP USA Inc. PDTA123Y_SER.pdf Description: TRANS PREBIAS PNP 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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PDTA124TS,126 PDTA124TS,126 NXP USA Inc. PDTA124T_SERIES.pdf Description: TRANS PREBIAS PNP 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 22 kOhms
Produkt ist nicht verfügbar
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PDTA124XS,126 PDTA124XS,126 NXP USA Inc. PDTA124X_SER.pdf Description: TRANS PREBIAS PNP 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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PDTA143TS,126 PDTA143TS,126 NXP USA Inc. PDTA143T_SERIES.pdf Description: TRANS PREBIAS PNP 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 4.7 kOhms
Produkt ist nicht verfügbar
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PDTA143XS,126 PDTA143XS,126 NXP USA Inc. PDTA143X_SER.pdf Description: TRANS PREBIAS PNP 500MW TO92-3
Produkt ist nicht verfügbar
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PDTA143ZS,126 PDTA143ZS,126 NXP USA Inc. PDTA143Z_Series_Rev2009.pdf Description: TRANS PREBIAS PNP 500MW TO92-3
Produkt ist nicht verfügbar
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PDTA144TS,126 PDTA144TS,126 NXP USA Inc. PDTA144T_SERIES.pdf Description: TRANS PREBIAS PNP 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 47 kOhms
Produkt ist nicht verfügbar
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PDTA144VE,115 PDTA144VE,115 NXP USA Inc. PDTA144V_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
Supplier Device Package: SC-75
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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PDTA144VK,115 PDTA144VK,115 NXP USA Inc. PDTA144V_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA144VS,126 PDTA144VS,126 NXP USA Inc. PDTA144V_SER.pdf Description: TRANS PREBIAS PNP 500MW TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA144WS,126 PDTA144WS,126 NXP USA Inc. PDTA144W_SERIES.pdf Description: TRANS PREBIAS PNP 500MW TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTB113EK,115 PDTB113EK,115 NXP USA Inc. PDTB113E.pdf Description: TRANS PREBIAS PNP 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTB113ZK,115 PDTB113ZK,115 NXP USA Inc. PDTB113Z.pdf Description: TRANS PREBIAS PNP 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTB123EK,115 PDTB123EK,115 NXP USA Inc. PDTB123E.pdf Description: TRANS PREBIAS PNP 250MW SMT3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTB123YK,115 PDTB123YK,115 NXP USA Inc. PDTB123Y.pdf Description: TRANS PREBIAS PNP 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTC114YS,126 PDTC114YS,126 NXP USA Inc. PHGLS24123-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTC115ES,126 PDTC115ES,126 NXP USA Inc. PDTC115E_SERIES.pdf Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTC115TS,126 PDTC115TS,126 NXP USA Inc. PDTC115T_SER.pdf Description: TRANS PREBIAS NPN 500MW TO92-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTC123ES,126 PDTC123ES,126 NXP USA Inc. PDTC123E_SERIES.pdf Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTC123JS,126 PDTC123JS,126 NXP USA Inc. PDTC123J%20Series.pdf Description: TRANS PREBIAS NPN 500MW TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTC123YE,115 PDTC123YE,115 NXP USA Inc. PDTC123Y_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: SC-75
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTC123YK,115 PDTC123YK,115 NXP USA Inc. PDTC123Y_SER.pdf Description: TRANS PREBIAS NPN 250MW SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTC123YS,126 PDTC123YS,126 NXP USA Inc. PDTC123Y_SER.pdf Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTC124TS,126 PDTC124TS,126 NXP USA Inc. PDTC124T_SERIES.pdf Description: TRANS PREBIAS NPN 500MW TO92-3
Produkt ist nicht verfügbar
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PDTC124XS,126 PDTC124XS,126 NXP USA Inc. PDTC124X_SER.pdf Description: TRANS PREBIAS NPN 500MW TO92-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTC143TS,126 PDTC143TS,126 NXP USA Inc. PDTC143T_SERIES.pdf Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 4.7 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTC143XS,126 PDTC143XS,126 NXP USA Inc. PDTC143X_SER.pdf Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTC143ZS,126 PDTC143ZS,126 NXP USA Inc. PDTC143Z_SERIES_7.pdf Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTC144TS,126 PDTC144TS,126 NXP USA Inc. PDTC144T_SERIES.pdf Description: TRANS PREBIAS NPN 500MW TO92-3
Produkt ist nicht verfügbar
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PDTC144VE,115 PDTC144VE,115 NXP USA Inc. PDTC144V_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
Supplier Device Package: SC-75
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTC144VK,115 PDTC144VK,115 NXP USA Inc. PDTC144V_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTC144VS,126 PDTC144VS,126 NXP USA Inc. PDTC144V_SER.pdf Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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PH4025L,115 PH4025L,115 NXP USA Inc. PH4025L.pdf Description: MOSFET N-CH 25V 99A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 99A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 46.4W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2601 pF @ 12 V
Produkt ist nicht verfügbar
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PH4830L,115 PH4830L,115 NXP USA Inc. PH4830L.pdf Description: MOSFET N-CH 30V 84A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2786 pF @ 12 V
Produkt ist nicht verfügbar
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PH9025L,115 PH9025L,115 NXP USA Inc. PH9025L.pdf Description: MOSFET N-CH 25V 66A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1414 pF @ 30 V
Produkt ist nicht verfügbar
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PH9930L,115 PH9930L,115 NXP USA Inc. PH9930L.pdf Description: MOSFET N-CH 30V 63A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 25A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1565 pF @ 12 V
Produkt ist nicht verfügbar
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PCA9673PW,118 PCA9673.pdf
PCA9673PW,118
Hersteller: NXP USA Inc.
Description: IC XPNDR 1MHZ I2C 24TSSOP
Features: POR
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 16
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Clock Frequency: 1 MHz
Interrupt Output: Yes
Supplier Device Package: 24-TSSOP
Current - Output Source/Sink: 100µA, 25mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.38 EUR
5000+2.33 EUR
Mindestbestellmenge: 2500
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PCA9675BQ,118 PCA9675_Rev2011.pdf
PCA9675BQ,118
Hersteller: NXP USA Inc.
Description: IC XPNDR 1MHZ I2C 24DHVQFN
Features: POR
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 16
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Clock Frequency: 1 MHz
Interrupt Output: Yes
Supplier Device Package: 24-DHVQFN (5.5x3.5)
Current - Output Source/Sink: 100µA, 25mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PCA9675DB,118 PCA9675_Rev2011.pdf
PCA9675DB,118
Hersteller: NXP USA Inc.
Description: IC XPNDR 1MHZ I2C 24SSOP
Features: POR
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 16
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Clock Frequency: 1 MHz
Interrupt Output: Yes
Supplier Device Package: 24-SSOP
Current - Output Source/Sink: 100µA, 25mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PCA9701D,112 PCA9701%2C02.pdf
PCA9701D,112
Hersteller: NXP USA Inc.
Description: IC XPNDR 5MHZ SPI SERIAL 24SO
Packaging: Tube
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: SPI Serial
Number of I/O: 16 (Input Only)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Clock Frequency: 5 MHz
Interrupt Output: Yes
Supplier Device Package: 24-SO
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCA9701PW,112 PCA9701%2C02.pdf
PCA9701PW,112
Hersteller: NXP USA Inc.
Description: IC XPNDR 5MHZ SPI SERIAL 24TSSOP
Packaging: Tube
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: SPI Serial
Number of I/O: 16 (Input Only)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Clock Frequency: 5 MHz
Interrupt Output: Yes
Supplier Device Package: 24-TSSOP
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCA9701PW,118 PCA9701_PCA9702.pdf
PCA9701PW,118
Hersteller: NXP USA Inc.
Description: IC XPNDR 5MHZ SPI SERIAL 24TSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: SPI Serial
Number of I/O: 16 (Input Only)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Clock Frequency: 5 MHz
Interrupt Output: Yes
Supplier Device Package: 24-TSSOP
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2586 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.10 EUR
10+2.29 EUR
25+2.08 EUR
100+1.86 EUR
250+1.75 EUR
500+1.69 EUR
1000+1.64 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
PCF2113DH/4,557 PCF2113_FAM.pdf
PCF2113DH/4,557
Hersteller: NXP USA Inc.
Description: IC DRVR MATRIX 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: I2C
Configuration: 5 x 8 (Matrix)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.2V ~ 4V
Supplier Device Package: 100-LQFP (14x14)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCF8576CH/1,157 PCF8576C.pdf
PCF8576CH/1,157
Hersteller: NXP USA Inc.
Description: IC DRVR 7 SEGMENT 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: I2C
Configuration: 7 Segment + DP, 14 Segment + DP + AP, Dot Matrix
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Digits or Characters: 10 Characters, 20 Characters, 160 Elements
Supplier Device Package: 64-LQFP (10x10)
Part Status: Obsolete
Current - Supply: 120 µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCF8576CH/1,118 PCF8576C.pdf
PCF8576CH/1,118
Hersteller: NXP USA Inc.
Description: IC DRVR 7 SEGMENT 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: I2C
Configuration: 7 Segment + DP, 14 Segment + DP + AP, Dot Matrix
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Digits or Characters: 10 Characters, 20 Characters, 160 Elements
Supplier Device Package: 64-LQFP (10x10)
Part Status: Obsolete
Current - Supply: 120 µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCF8579H/1:118 PCF8579.pdf
PCF8579H/1:118
Hersteller: NXP USA Inc.
Description: IC DRVR DOT MATRIX 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: I2C
Configuration: Dot Matrix
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 6V
Supplier Device Package: 64-LQFP (10x10)
Current - Supply: 9 µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCF8583BS,518 PCF8583.pdf
PCF8583BS,518
Hersteller: NXP USA Inc.
Description: IC RTC CLK/CALENDAR I2C 20HVQFN
Packaging: Tape & Reel (TR)
Features: Alarm, NVSRAM, Square Wave Output
Package / Case: 20-VQFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 240B
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 6V
Time Format: HH:MM:SS:hh (12/24 hr)
Date Format: YY-MM-DD
Supplier Device Package: 20-HVQFN (5x5)
Current - Timekeeping (Max): 10µA ~ 50µA @ 1V ~ 5V
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA113EK,115 PHGLS19170-1.pdf?t.download=true&u=5oefqw
PDTA113EK,115
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 1.5mA, 30mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 40mA, 5V
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA113ES,126 PHGLS19170-1.pdf?t.download=true&u=5oefqw
PDTA113ES,126
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 1.5mA, 30mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 40mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA113ZK,115 PDTA113Z_SER.pdf
PDTA113ZK,115
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA113ZS,126 PDTA113Z_SER.pdf
PDTA113ZS,126
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA114YS,126
PDTA114YS,126
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA115ES,126 PDTA115E_SERIES.pdf
PDTA115ES,126
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS PNP 500MW TO92-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA115TS,126 PDTA115T_SER.pdf
PDTA115TS,126
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS PNP 500MW TO92-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA123ES,126 PDTA123E_SERIES.pdf
PDTA123ES,126
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA123JS,126 PDTA123J_Rev2004.pdf
PDTA123JS,126
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA123TE,115 PDTA123T_SER.pdf
PDTA123TE,115
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Supplier Device Package: SC-75
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 2.2 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA123TK,115 PDTA123T_SER.pdf
PDTA123TK,115
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA123YE,115 PDTA123Y_SER.pdf
PDTA123YE,115
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: SC-75
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA123YK,115 PDTA123Y_SER.pdf
PDTA123YK,115
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA123YS,126 PDTA123Y_SER.pdf
PDTA123YS,126
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA124TS,126 PDTA124T_SERIES.pdf
PDTA124TS,126
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 22 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA124XS,126 PDTA124X_SER.pdf
PDTA124XS,126
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA143TS,126 PDTA143T_SERIES.pdf
PDTA143TS,126
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 4.7 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA143XS,126 PDTA143X_SER.pdf
PDTA143XS,126
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS PNP 500MW TO92-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA143ZS,126 PDTA143Z_Series_Rev2009.pdf
PDTA143ZS,126
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS PNP 500MW TO92-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA144TS,126 PDTA144T_SERIES.pdf
PDTA144TS,126
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 47 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA144VE,115 PDTA144V_SER.pdf
PDTA144VE,115
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
Supplier Device Package: SC-75
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA144VK,115 PDTA144V_SER.pdf
PDTA144VK,115
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA144VS,126 PDTA144V_SER.pdf
PDTA144VS,126
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS PNP 500MW TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA144WS,126 PDTA144W_SERIES.pdf
PDTA144WS,126
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS PNP 500MW TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
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PDTB113EK,115 PDTB113E.pdf
PDTB113EK,115
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Produkt ist nicht verfügbar
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PDTB113ZK,115 PDTB113Z.pdf
PDTB113ZK,115
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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PDTB123EK,115 PDTB123E.pdf
PDTB123EK,115
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS PNP 250MW SMT3
Produkt ist nicht verfügbar
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PDTB123YK,115 PDTB123Y.pdf
PDTB123YK,115
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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PDTC114YS,126 PHGLS24123-1.pdf?t.download=true&u=5oefqw
PDTC114YS,126
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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PDTC115ES,126 PDTC115E_SERIES.pdf
PDTC115ES,126
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Produkt ist nicht verfügbar
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PDTC115TS,126 PDTC115T_SER.pdf
PDTC115TS,126
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS NPN 500MW TO92-3
Produkt ist nicht verfügbar
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PDTC123ES,126 PDTC123E_SERIES.pdf
PDTC123ES,126
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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PDTC123JS,126 PDTC123J%20Series.pdf
PDTC123JS,126
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS NPN 500MW TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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PDTC123YE,115 PDTC123Y_SER.pdf
PDTC123YE,115
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: SC-75
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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PDTC123YK,115 PDTC123Y_SER.pdf
PDTC123YK,115
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS NPN 250MW SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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PDTC123YS,126 PDTC123Y_SER.pdf
PDTC123YS,126
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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PDTC124TS,126 PDTC124T_SERIES.pdf
PDTC124TS,126
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS NPN 500MW TO92-3
Produkt ist nicht verfügbar
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PDTC124XS,126 PDTC124X_SER.pdf
PDTC124XS,126
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS NPN 500MW TO92-3
Produkt ist nicht verfügbar
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PDTC143TS,126 PDTC143T_SERIES.pdf
PDTC143TS,126
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 4.7 kOhms
Produkt ist nicht verfügbar
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PDTC143XS,126 PDTC143X_SER.pdf
PDTC143XS,126
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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PDTC143ZS,126 PDTC143Z_SERIES_7.pdf
PDTC143ZS,126
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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PDTC144TS,126 PDTC144T_SERIES.pdf
PDTC144TS,126
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS NPN 500MW TO92-3
Produkt ist nicht verfügbar
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PDTC144VE,115 PDTC144V_SER.pdf
PDTC144VE,115
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
Supplier Device Package: SC-75
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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PDTC144VK,115 PDTC144V_SER.pdf
PDTC144VK,115
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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PDTC144VS,126 PDTC144V_SER.pdf
PDTC144VS,126
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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PH4025L,115 PH4025L.pdf
PH4025L,115
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 25V 99A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 99A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 46.4W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2601 pF @ 12 V
Produkt ist nicht verfügbar
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PH4830L,115 PH4830L.pdf
PH4830L,115
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 30V 84A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2786 pF @ 12 V
Produkt ist nicht verfügbar
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PH9025L,115 PH9025L.pdf
PH9025L,115
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 25V 66A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1414 pF @ 30 V
Produkt ist nicht verfügbar
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PH9930L,115 PH9930L.pdf
PH9930L,115
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 30V 63A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 25A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1565 pF @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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