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MC14099BDWR2G MC14099BDWR2G onsemi mc14099b-d.pdf Description: IC LATCH 8BIT ADDRESS 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 4:4
Logic Type: D-Type, Addressable
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 1
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 50ns
Supplier Device Package: 16-SOIC
auf Bestellung 5812 Stücke:
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8+2.27 EUR
10+2.03 EUR
25+1.93 EUR
100+1.48 EUR
250+1.31 EUR
500+1.24 EUR
Mindestbestellmenge: 8
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MC78M05CDTX MC78M05CDTX onsemi MC78Mxx.pdf Description: IC REG LINEAR 5V 500MA DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 5V
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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MC78M05CDTX MC78M05CDTX onsemi MC78Mxx.pdf Description: IC REG LINEAR 5V 500MA DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 5V
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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H11F1300 H11F1300 onsemi H11F1,2,3.pdf Description: OPTOISOLTR 5.3KV PHOTO FET 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: MOSFET
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.3V
Input Type: DC
Voltage - Isolation: 5300Vrms
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 25µs, 25µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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NCV8711BMTW300TBG NCV8711BMTW300TBG onsemi ncv8711-d.pdf Description: IC REG LINEAR 3V 100MA 6-WDFNW
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 100mA
Operating Temperature: 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: 6-WDFNW (2x2)
Voltage - Output (Min/Fixed): 3V
Control Features: Current Limit, Enable, Power Good, Soft Start
PSRR: 80dB ~ 48dB (10Hz ~ 1MHz)
Voltage Dropout (Max): 0.355V @ 100mA
Protection Features: Over Current, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NCV8711BMTW300TBG NCV8711BMTW300TBG onsemi ncv8711-d.pdf Description: IC REG LINEAR 3V 100MA 6-WDFNW
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 100mA
Operating Temperature: 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: 6-WDFNW (2x2)
Voltage - Output (Min/Fixed): 3V
Control Features: Current Limit, Enable, Power Good, Soft Start
PSRR: 80dB ~ 48dB (10Hz ~ 1MHz)
Voltage Dropout (Max): 0.355V @ 100mA
Protection Features: Over Current, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2983 Stücke:
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10+1.90 EUR
16+1.16 EUR
25+0.97 EUR
100+0.75 EUR
250+0.64 EUR
500+0.57 EUR
1000+0.52 EUR
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NCV8711BMTW330TBG NCV8711BMTW330TBG onsemi ncv8711-d.pdf Description: IC REG LINEAR 3.3V 100MA 6-WDFNW
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 100mA
Operating Temperature: 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: 6-WDFNW (2x2)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit, Enable, Power Good, Soft Start
PSRR: 80dB ~ 48dB (10Hz ~ 1MHz)
Voltage Dropout (Max): 0.355V @ 100mA
Protection Features: Over Current, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 26850 Stücke:
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10+1.90 EUR
16+1.16 EUR
25+0.97 EUR
100+0.75 EUR
250+0.64 EUR
500+0.57 EUR
1000+0.52 EUR
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NCV8730BMTW330TBG NCV8730BMTW330TBG onsemi NCV8730-D.PDF Description: IC REG LINEAR 3.3V 150MA 6-WDFNW
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 3 µA
Voltage - Input (Max): 38V
Number of Regulators: 1
Supplier Device Package: 6-WDFNW (2x2)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Power Good, Soft Start
PSRR: 80dB ~ 48dB (10Hz ~ 1MHz)
Voltage Dropout (Max): 0.48V @ 150mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 450 µA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4319 Stücke:
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8+2.22 EUR
13+1.36 EUR
25+1.13 EUR
100+0.88 EUR
250+0.76 EUR
500+0.68 EUR
1000+0.62 EUR
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2SK4065-E 2SK4065-E onsemi Description: MOSFET N-CH 75V 100A SMP
Packaging: Bulk
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: SMP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V
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DSK10G-BT DSK10G-BT onsemi SNYOD003-89.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, 1A, 600V
Packaging: Bulk
auf Bestellung 39000 Stücke:
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3643+0.12 EUR
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DSK10B DSK10B onsemi DSK10.pdf Description: DIODE GEN PURP 100V 1A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 116710 Stücke:
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3806+0.14 EUR
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DSK10B DSK10B onsemi DSK10.pdf Description: DIODE GEN PURP 100V 1A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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DSK10C DSK10C onsemi DSK10.pdf Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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DSK10E DSK10E onsemi DSK10.pdf Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 710159 Stücke:
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3806+0.14 EUR
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DSK10E DSK10E onsemi DSK10.pdf Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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DSK10B-AT1 DSK10B-AT1 onsemi DSK10.pdf Description: DIODE GEN PURP 100V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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DSK10B-BT DSK10B-BT onsemi DSK10.pdf Description: DIODE GEN PURP 100V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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DSK10B-BT DSK10B-BT onsemi DSK10.pdf Description: DIODE GEN PURP 100V 1A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 305000 Stücke:
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3806+0.14 EUR
Mindestbestellmenge: 3806
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DSK10C-AT1 DSK10C-AT1 onsemi DSK10.pdf Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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DSK10C-AT1 DSK10C-AT1 onsemi DSK10.pdf Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 30000 Stücke:
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3806+0.14 EUR
Mindestbestellmenge: 3806
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DSK10C-BT DSK10C-BT onsemi DSK10.pdf Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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DSK10C-ET1 DSK10C-ET1 onsemi DSK10.pdf Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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DSK10E-AT1 DSK10E-AT1 onsemi DSK10.pdf Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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DSK10E-BT DSK10E-BT onsemi DSK10.pdf Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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DSK10E-BT DSK10E-BT onsemi DSK10.pdf Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 3339333 Stücke:
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3806+0.14 EUR
Mindestbestellmenge: 3806
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DSK10E-ET1 DSK10E-ET1 onsemi DSK10.pdf Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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DSK10E-ET1 DSK10E-ET1 onsemi DSK10.pdf Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 18000 Stücke:
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3806+0.14 EUR
Mindestbestellmenge: 3806
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NLV74VHC244DTR2G NLV74VHC244DTR2G onsemi mc74vhc244-d.pdf Description: IC BUF NON-INVERT 5.5V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
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2500+0.54 EUR
Mindestbestellmenge: 2500
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NLV74VHC244DTR2G NLV74VHC244DTR2G onsemi mc74vhc244-d.pdf Description: IC BUF NON-INVERT 5.5V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
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NCV4949CPDR2G NCV4949CPDR2G onsemi ncv4949c-d.pdf Description: IC REG LINEAR 5V 100MA 8-SOIC-EP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 260 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: 8-SOIC-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 5 mA
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.73 EUR
10+2.32 EUR
25+1.96 EUR
100+1.55 EUR
250+1.34 EUR
500+1.22 EUR
1000+1.12 EUR
Mindestbestellmenge: 5
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NCV4949PDG NCV4949PDG onsemi l4949-d.pdf Description: IC REG LINEAR 5V 100MA 8-SOIC-EP
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 260 µA
Voltage - Input (Max): 28V
Number of Regulators: 1
Supplier Device Package: 8-SOIC-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 5 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NCV4949DWR2G NCV4949DWR2G onsemi l4949-d.pdf Description: IC REG LINEAR 5V 100MA 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 260 µA
Voltage - Input (Max): 28V
Number of Regulators: 1
Supplier Device Package: 20-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 5 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NCV4949ADR2G NCV4949ADR2G onsemi ncv4949a-d.pdf Description: IC REG LINEAR 5V 100MA 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 260 µA
Voltage - Input (Max): 28V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Reset Output
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 5 mA
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TIP29C TIP29C onsemi TIP29%2C30%20A%2CB%2CC_Rev13.pdf Description: TRANS NPN 100V 1A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
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1N4454 1N4454 onsemi 1n4454-d.pdf Description: DIODE STANDARD 50V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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298+0.06 EUR
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MM74HCT374N MM74HCT374N onsemi mm74hct373-d.pdf Description: IC FF D-TYPE SNGL 8BIT 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: Tri-State, Non-Inverted
Mounting Type: Through Hole
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 7.2mA, 7.2mA
Trigger Type: Positive Edge
Clock Frequency: 30 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-PDIP
Max Propagation Delay @ V, Max CL: 46ns @ 5V, 150pF
Number of Bits per Element: 8
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NCP1681BAD2R2G NCP1681BAD2R2G onsemi ncp1681-d.pdf Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Tape & Reel (TR)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
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NCP1681BAD2R2G NCP1681BAD2R2G onsemi ncp1681-d.pdf Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Cut Tape (CT)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
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NCP1681ABD2R2G NCP1681ABD2R2G onsemi ncp1681-d.pdf Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Tape & Reel (TR)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 95kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
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NCP1681ABD2R2G NCP1681ABD2R2G onsemi ncp1681-d.pdf Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Cut Tape (CT)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 95kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
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NCP1681AAD2R2G NCP1681AAD2R2G onsemi ncp1681-d.pdf Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Tape & Reel (TR)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
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NCP1681AAD2R2G NCP1681AAD2R2G onsemi ncp1681-d.pdf Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Cut Tape (CT)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
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FDMC013P030Z onsemi fdmc013p030z-d.pdf Description: P-CHANNEL POWERTRENCH MOSFET -30
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5785 pF @ 15 V
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NVMFWS016N10MCLT1G NVMFWS016N10MCLT1G onsemi nvmfs016n10mcl-d.pdf Description: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V
Power Dissipation (Max): 3.6W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 3V @ 64µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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NVMFWS2D3P04M8LT1G NVMFWS2D3P04M8LT1G onsemi nvmfs2d3p04m8l-d.pdf Description: MV8 P INITIAL PROGRAM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 205W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 2.7mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5985 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5436 Stücke:
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NVMFWS025P04M8LT1G NVMFWS025P04M8LT1G onsemi nvmfs025p04m8l-d.pdf Description: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34.6A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 44.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 255µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1058 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
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NVMFWS027N10MCLT1G NVMFWS027N10MCLT1G onsemi nvmfs027n10mcl-d.pdf Description: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Power Dissipation (Max): 3.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11530 Stücke:
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NVMFS003P03P8ZT1G NVMFS003P03P8ZT1G onsemi nvmfs003p03p8z-d.pdf Description: PFET SO8FL -30V 3MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V
Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V
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NVMFS003P03P8ZT1G NVMFS003P03P8ZT1G onsemi nvmfs003p03p8z-d.pdf Description: PFET SO8FL -30V 3MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V
Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V
auf Bestellung 1476 Stücke:
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NVMFD5C466NT1G NVMFD5C466NT1G onsemi nvmfd5c466n-d.pdf Description: MOSFET 2N-CH 40V 14A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 38W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 49A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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NVMFD5C466NT1G NVMFD5C466NT1G onsemi nvmfd5c466n-d.pdf Description: MOSFET 2N-CH 40V 14A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 38W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 49A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 68731 Stücke:
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5+4.24 EUR
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NVMFS6H818NLWFT1G NVMFS6H818NLWFT1G onsemi nvmfs6h818nl-d.pdf Description: MOSFET N-CH 80V 22A/135A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 190µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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NVMFS5C406NT1G onsemi nvmfs5c406n-d.pdf Description: MOSFET N-CH 40V 52A/353A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 353A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7288 pF @ 20 V
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NVMFS5C406NT1G onsemi nvmfs5c406n-d.pdf Description: MOSFET N-CH 40V 52A/353A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 353A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7288 pF @ 20 V
auf Bestellung 190 Stücke:
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10+6.81 EUR
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NVMFS5C468NT1G onsemi nvmfs5c468n-d.pdf Description: MOSFET N-CH 40V 12A/35A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
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NVMFS5C468NT1G onsemi nvmfs5c468n-d.pdf Description: MOSFET N-CH 40V 12A/35A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
auf Bestellung 554 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.27 EUR
10+1.85 EUR
100+1.44 EUR
500+1.22 EUR
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FQPF18N50V2 FQPF18N50V2 onsemi FQP_PF18N50V2.pdf Description: MOSFET N-CH 500V 18A TO220F
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Produkt ist nicht verfügbar
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BD237STU BD237STU onsemi Description: TRANS NPN 80V 2A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
Produkt ist nicht verfügbar
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BD441STU BD441STU onsemi Description: TRANS NPN 80V 4A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 36 W
Produkt ist nicht verfügbar
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FJP13007H1TU FJP13007H1TU onsemi fjp13007-d.pdf Description: TRANS NPN 400V 8A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
Produkt ist nicht verfügbar
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MC14099BDWR2G mc14099b-d.pdf
MC14099BDWR2G
Hersteller: onsemi
Description: IC LATCH 8BIT ADDRESS 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 4:4
Logic Type: D-Type, Addressable
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 1
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 50ns
Supplier Device Package: 16-SOIC
auf Bestellung 5812 Stücke:
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Anzahl Preis
8+2.27 EUR
10+2.03 EUR
25+1.93 EUR
100+1.48 EUR
250+1.31 EUR
500+1.24 EUR
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MC78M05CDTX MC78Mxx.pdf
MC78M05CDTX
Hersteller: onsemi
Description: IC REG LINEAR 5V 500MA DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 5V
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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MC78M05CDTX MC78Mxx.pdf
MC78M05CDTX
Hersteller: onsemi
Description: IC REG LINEAR 5V 500MA DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 5V
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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H11F1300 H11F1,2,3.pdf
H11F1300
Hersteller: onsemi
Description: OPTOISOLTR 5.3KV PHOTO FET 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: MOSFET
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.3V
Input Type: DC
Voltage - Isolation: 5300Vrms
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 25µs, 25µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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NCV8711BMTW300TBG ncv8711-d.pdf
NCV8711BMTW300TBG
Hersteller: onsemi
Description: IC REG LINEAR 3V 100MA 6-WDFNW
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 100mA
Operating Temperature: 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: 6-WDFNW (2x2)
Voltage - Output (Min/Fixed): 3V
Control Features: Current Limit, Enable, Power Good, Soft Start
PSRR: 80dB ~ 48dB (10Hz ~ 1MHz)
Voltage Dropout (Max): 0.355V @ 100mA
Protection Features: Over Current, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NCV8711BMTW300TBG ncv8711-d.pdf
NCV8711BMTW300TBG
Hersteller: onsemi
Description: IC REG LINEAR 3V 100MA 6-WDFNW
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 100mA
Operating Temperature: 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: 6-WDFNW (2x2)
Voltage - Output (Min/Fixed): 3V
Control Features: Current Limit, Enable, Power Good, Soft Start
PSRR: 80dB ~ 48dB (10Hz ~ 1MHz)
Voltage Dropout (Max): 0.355V @ 100mA
Protection Features: Over Current, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2983 Stücke:
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Anzahl Preis
10+1.90 EUR
16+1.16 EUR
25+0.97 EUR
100+0.75 EUR
250+0.64 EUR
500+0.57 EUR
1000+0.52 EUR
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NCV8711BMTW330TBG ncv8711-d.pdf
NCV8711BMTW330TBG
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 100MA 6-WDFNW
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 100mA
Operating Temperature: 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: 6-WDFNW (2x2)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit, Enable, Power Good, Soft Start
PSRR: 80dB ~ 48dB (10Hz ~ 1MHz)
Voltage Dropout (Max): 0.355V @ 100mA
Protection Features: Over Current, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 26850 Stücke:
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Anzahl Preis
10+1.90 EUR
16+1.16 EUR
25+0.97 EUR
100+0.75 EUR
250+0.64 EUR
500+0.57 EUR
1000+0.52 EUR
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NCV8730BMTW330TBG NCV8730-D.PDF
NCV8730BMTW330TBG
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 150MA 6-WDFNW
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 3 µA
Voltage - Input (Max): 38V
Number of Regulators: 1
Supplier Device Package: 6-WDFNW (2x2)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Power Good, Soft Start
PSRR: 80dB ~ 48dB (10Hz ~ 1MHz)
Voltage Dropout (Max): 0.48V @ 150mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 450 µA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4319 Stücke:
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Anzahl Preis
8+2.22 EUR
13+1.36 EUR
25+1.13 EUR
100+0.88 EUR
250+0.76 EUR
500+0.68 EUR
1000+0.62 EUR
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2SK4065-E
2SK4065-E
Hersteller: onsemi
Description: MOSFET N-CH 75V 100A SMP
Packaging: Bulk
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: SMP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V
auf Bestellung 100 Stücke:
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Anzahl Preis
49+10.10 EUR
Mindestbestellmenge: 49
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DSK10G-BT SNYOD003-89.pdf?t.download=true&u=5oefqw
DSK10G-BT
Hersteller: onsemi
Description: RECTIFIER DIODE, 1A, 600V
Packaging: Bulk
auf Bestellung 39000 Stücke:
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Anzahl Preis
3643+0.12 EUR
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DSK10B DSK10.pdf
DSK10B
Hersteller: onsemi
Description: DIODE GEN PURP 100V 1A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 116710 Stücke:
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Anzahl Preis
3806+0.14 EUR
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DSK10B DSK10.pdf
DSK10B
Hersteller: onsemi
Description: DIODE GEN PURP 100V 1A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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DSK10C DSK10.pdf
DSK10C
Hersteller: onsemi
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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DSK10E DSK10.pdf
DSK10E
Hersteller: onsemi
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 710159 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3806+0.14 EUR
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DSK10E DSK10.pdf
DSK10E
Hersteller: onsemi
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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DSK10B-AT1 DSK10.pdf
DSK10B-AT1
Hersteller: onsemi
Description: DIODE GEN PURP 100V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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DSK10B-BT DSK10.pdf
DSK10B-BT
Hersteller: onsemi
Description: DIODE GEN PURP 100V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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DSK10B-BT DSK10.pdf
DSK10B-BT
Hersteller: onsemi
Description: DIODE GEN PURP 100V 1A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 305000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3806+0.14 EUR
Mindestbestellmenge: 3806
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DSK10C-AT1 DSK10.pdf
DSK10C-AT1
Hersteller: onsemi
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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DSK10C-AT1 DSK10.pdf
DSK10C-AT1
Hersteller: onsemi
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3806+0.14 EUR
Mindestbestellmenge: 3806
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DSK10C-BT DSK10.pdf
DSK10C-BT
Hersteller: onsemi
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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DSK10C-ET1 DSK10.pdf
DSK10C-ET1
Hersteller: onsemi
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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DSK10E-AT1 DSK10.pdf
DSK10E-AT1
Hersteller: onsemi
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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DSK10E-BT DSK10.pdf
DSK10E-BT
Hersteller: onsemi
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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DSK10E-BT DSK10.pdf
DSK10E-BT
Hersteller: onsemi
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 3339333 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3806+0.14 EUR
Mindestbestellmenge: 3806
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DSK10E-ET1 DSK10.pdf
DSK10E-ET1
Hersteller: onsemi
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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DSK10E-ET1 DSK10.pdf
DSK10E-ET1
Hersteller: onsemi
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3806+0.14 EUR
Mindestbestellmenge: 3806
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NLV74VHC244DTR2G mc74vhc244-d.pdf
NLV74VHC244DTR2G
Hersteller: onsemi
Description: IC BUF NON-INVERT 5.5V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.54 EUR
Mindestbestellmenge: 2500
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NLV74VHC244DTR2G mc74vhc244-d.pdf
NLV74VHC244DTR2G
Hersteller: onsemi
Description: IC BUF NON-INVERT 5.5V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
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NCV4949CPDR2G ncv4949c-d.pdf
NCV4949CPDR2G
Hersteller: onsemi
Description: IC REG LINEAR 5V 100MA 8-SOIC-EP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 260 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: 8-SOIC-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 5 mA
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.73 EUR
10+2.32 EUR
25+1.96 EUR
100+1.55 EUR
250+1.34 EUR
500+1.22 EUR
1000+1.12 EUR
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NCV4949PDG l4949-d.pdf
NCV4949PDG
Hersteller: onsemi
Description: IC REG LINEAR 5V 100MA 8-SOIC-EP
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 260 µA
Voltage - Input (Max): 28V
Number of Regulators: 1
Supplier Device Package: 8-SOIC-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 5 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NCV4949DWR2G l4949-d.pdf
NCV4949DWR2G
Hersteller: onsemi
Description: IC REG LINEAR 5V 100MA 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 260 µA
Voltage - Input (Max): 28V
Number of Regulators: 1
Supplier Device Package: 20-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 5 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NCV4949ADR2G ncv4949a-d.pdf
NCV4949ADR2G
Hersteller: onsemi
Description: IC REG LINEAR 5V 100MA 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 260 µA
Voltage - Input (Max): 28V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Reset Output
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 5 mA
Produkt ist nicht verfügbar
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TIP29C TIP29%2C30%20A%2CB%2CC_Rev13.pdf
TIP29C
Hersteller: onsemi
Description: TRANS NPN 100V 1A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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1N4454 1n4454-d.pdf
1N4454
Hersteller: onsemi
Description: DIODE STANDARD 50V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 52168 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
257+0.07 EUR
298+0.06 EUR
500+0.04 EUR
1000+0.03 EUR
2000+0.03 EUR
5000+0.02 EUR
10000+0.02 EUR
50000+0.02 EUR
Mindestbestellmenge: 112
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MM74HCT374N mm74hct373-d.pdf
MM74HCT374N
Hersteller: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: Tri-State, Non-Inverted
Mounting Type: Through Hole
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 7.2mA, 7.2mA
Trigger Type: Positive Edge
Clock Frequency: 30 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-PDIP
Max Propagation Delay @ V, Max CL: 46ns @ 5V, 150pF
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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NCP1681BAD2R2G ncp1681-d.pdf
NCP1681BAD2R2G
Hersteller: onsemi
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Tape & Reel (TR)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+4.05 EUR
Mindestbestellmenge: 2500
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NCP1681BAD2R2G ncp1681-d.pdf
NCP1681BAD2R2G
Hersteller: onsemi
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Cut Tape (CT)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
auf Bestellung 4456 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.40 EUR
10+6.87 EUR
25+5.95 EUR
100+4.91 EUR
250+4.39 EUR
500+4.08 EUR
1000+4.05 EUR
Mindestbestellmenge: 2
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NCP1681ABD2R2G ncp1681-d.pdf
NCP1681ABD2R2G
Hersteller: onsemi
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Tape & Reel (TR)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 95kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
Produkt ist nicht verfügbar
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NCP1681ABD2R2G ncp1681-d.pdf
NCP1681ABD2R2G
Hersteller: onsemi
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Cut Tape (CT)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 95kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
auf Bestellung 2269 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.84 EUR
10+3.06 EUR
25+2.60 EUR
100+2.07 EUR
250+1.81 EUR
500+1.66 EUR
1000+1.52 EUR
Mindestbestellmenge: 4
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NCP1681AAD2R2G ncp1681-d.pdf
NCP1681AAD2R2G
Hersteller: onsemi
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Tape & Reel (TR)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
Produkt ist nicht verfügbar
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NCP1681AAD2R2G ncp1681-d.pdf
NCP1681AAD2R2G
Hersteller: onsemi
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Cut Tape (CT)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
auf Bestellung 1875 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.63 EUR
10+2.93 EUR
25+2.48 EUR
100+1.97 EUR
250+1.73 EUR
500+1.57 EUR
1000+1.45 EUR
Mindestbestellmenge: 4
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FDMC013P030Z fdmc013p030z-d.pdf
Hersteller: onsemi
Description: P-CHANNEL POWERTRENCH MOSFET -30
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5785 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
194+2.73 EUR
Mindestbestellmenge: 194
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NVMFWS016N10MCLT1G nvmfs016n10mcl-d.pdf
NVMFWS016N10MCLT1G
Hersteller: onsemi
Description: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V
Power Dissipation (Max): 3.6W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 3V @ 64µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.62 EUR
11+1.67 EUR
100+1.12 EUR
500+0.88 EUR
Mindestbestellmenge: 7
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NVMFWS2D3P04M8LT1G nvmfs2d3p04m8l-d.pdf
NVMFWS2D3P04M8LT1G
Hersteller: onsemi
Description: MV8 P INITIAL PROGRAM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 205W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 2.7mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5985 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5436 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.47 EUR
10+4.59 EUR
100+3.71 EUR
500+3.30 EUR
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NVMFWS025P04M8LT1G nvmfs025p04m8l-d.pdf
NVMFWS025P04M8LT1G
Hersteller: onsemi
Description: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34.6A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 44.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 255µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1058 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1434 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.39 EUR
16+1.14 EUR
100+0.88 EUR
500+0.75 EUR
Mindestbestellmenge: 13
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NVMFWS027N10MCLT1G nvmfs027n10mcl-d.pdf
NVMFWS027N10MCLT1G
Hersteller: onsemi
Description: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Power Dissipation (Max): 3.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11530 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.45 EUR
12+1.54 EUR
100+1.03 EUR
500+0.80 EUR
Mindestbestellmenge: 8
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NVMFS003P03P8ZT1G nvmfs003p03p8z-d.pdf
NVMFS003P03P8ZT1G
Hersteller: onsemi
Description: PFET SO8FL -30V 3MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V
Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V
Produkt ist nicht verfügbar
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NVMFS003P03P8ZT1G nvmfs003p03p8z-d.pdf
NVMFS003P03P8ZT1G
Hersteller: onsemi
Description: PFET SO8FL -30V 3MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V
Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V
auf Bestellung 1476 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.87 EUR
10+3.23 EUR
100+2.57 EUR
500+2.17 EUR
Mindestbestellmenge: 5
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NVMFD5C466NT1G nvmfd5c466n-d.pdf
NVMFD5C466NT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 14A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 38W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 49A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 67500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.33 EUR
3000+1.27 EUR
Mindestbestellmenge: 1500
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NVMFD5C466NT1G nvmfd5c466n-d.pdf
NVMFD5C466NT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 14A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 38W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 49A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 68731 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.24 EUR
10+2.73 EUR
100+1.87 EUR
500+1.50 EUR
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NVMFS6H818NLWFT1G nvmfs6h818nl-d.pdf
NVMFS6H818NLWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 22A/135A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 190µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.10 EUR
10+5.53 EUR
100+4.04 EUR
500+3.37 EUR
Mindestbestellmenge: 3
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NVMFS5C406NT1G nvmfs5c406n-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 40V 52A/353A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 353A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7288 pF @ 20 V
Produkt ist nicht verfügbar
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NVMFS5C406NT1G nvmfs5c406n-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 40V 52A/353A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 353A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7288 pF @ 20 V
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.11 EUR
10+6.81 EUR
100+5.51 EUR
Mindestbestellmenge: 3
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NVMFS5C468NT1G nvmfs5c468n-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 40V 12A/35A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Produkt ist nicht verfügbar
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NVMFS5C468NT1G nvmfs5c468n-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 40V 12A/35A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
auf Bestellung 554 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.27 EUR
10+1.85 EUR
100+1.44 EUR
500+1.22 EUR
Mindestbestellmenge: 8
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FQPF18N50V2 FQP_PF18N50V2.pdf
FQPF18N50V2
Hersteller: onsemi
Description: MOSFET N-CH 500V 18A TO220F
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Produkt ist nicht verfügbar
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BD237STU
BD237STU
Hersteller: onsemi
Description: TRANS NPN 80V 2A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
Produkt ist nicht verfügbar
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BD441STU
BD441STU
Hersteller: onsemi
Description: TRANS NPN 80V 4A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 36 W
Produkt ist nicht verfügbar
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FJP13007H1TU fjp13007-d.pdf
FJP13007H1TU
Hersteller: onsemi
Description: TRANS NPN 400V 8A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
Produkt ist nicht verfügbar
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