| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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PZT3904T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; SOT223-4,TO261-4 Kind of package: reel; tape Type of transistor: NPN Case: SOT223-4; TO261-4 Collector current: 0.2A Power dissipation: 1.5W Current gain: 100...300 Collector-emitter voltage: 40V Frequency: 300MHz Polarisation: bipolar Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 603 Stücke: Lieferzeit 7-14 Tag (e) |
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| PZTA06 | ONSEMI |
PZTA06 NPN SMD transistors |
auf Bestellung 3332 Stücke: Lieferzeit 7-14 Tag (e) |
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PZTA42T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 40 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 497 Stücke: Lieferzeit 7-14 Tag (e) |
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| PZTA92T1G | ONSEMI |
PZTA92T1G PNP SMD transistors |
auf Bestellung 1673 Stücke: Lieferzeit 7-14 Tag (e) |
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| QED123 | ONSEMI |
QED123 IR LEDs |
auf Bestellung 336 Stücke: Lieferzeit 7-14 Tag (e) |
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| QED123A4R0 | ONSEMI |
QED123A4R0 IR LEDs |
auf Bestellung 1037 Stücke: Lieferzeit 7-14 Tag (e) |
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| QED223 | ONSEMI |
QED223 IR LEDs |
auf Bestellung 253 Stücke: Lieferzeit 7-14 Tag (e) |
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| QED234 | ONSEMI |
QED234 IR LEDs |
auf Bestellung 99 Stücke: Lieferzeit 7-14 Tag (e) |
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QEE113 | ONSEMI |
Category: IR LEDsDescription: IR transmitter; 940nm; transparent; 7.5mW; 50°; 1.5VDC; THT; 100mA Type of diode: IR transmitter Wavelength: 940nm LED lens: transparent Radiant power: 7.5mW Viewing angle: 50° Operating voltage: 1.5V DC Mounting: THT Dimensions: 4.44x2.54x5.08mm LED current: 100mA LED version: angular Shape: rectangular Wavelength of peak sensitivity: 940nm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 302 Stücke: Lieferzeit 7-14 Tag (e) |
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| QEE123 | ONSEMI |
QEE123 IR LEDs |
auf Bestellung 121 Stücke: Lieferzeit 7-14 Tag (e) |
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QRD1114 | ONSEMI |
Category: PCB Photoelectric SensorsDescription: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB Type of sensor: photoelectric Operation mode: diffuse-reflective Output configuration: NPN Supply voltage: 5V DC Mounting: PCB Body dimensions: 4.39x6.1x4.65mm Operating temperature: -40...85°C Anzahl je Verpackung: 1 Stücke |
auf Bestellung 179 Stücke: Lieferzeit 7-14 Tag (e) |
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QSD123 | ONSEMI |
Category: PhototransistorsDescription: Phototransistor; THT; 5mm; λp max: 880nm; 30V; 24° LED lens: black with IR filter Mounting: THT Type of photoelement: phototransistor Wavelength of peak sensitivity: 880nm LED diameter: 5mm Viewing angle: 24° Collector-emitter voltage: 30V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 603 Stücke: Lieferzeit 7-14 Tag (e) |
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QSD2030 | ONSEMI |
Category: PhotodiodesDescription: Photodiode; 5mm; THT; 880nm; 400÷1100nm; 40°; 1.3V; convex Type of photoelement: photodiode Wavelength: 400...1100nm Wavelength of peak sensitivity: 880nm LED diameter: 5mm Operating voltage: 1.3V Viewing angle: 40° LED lens: transparent Front: convex Mounting: THT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 503 Stücke: Lieferzeit 7-14 Tag (e) |
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QSD2030F | ONSEMI |
Category: PhotodiodesDescription: Photodiode; 5mm; THT; 880nm; 700÷1100nm; 20°; 1.3V; convex; black Type of photoelement: photodiode Wavelength: 700...1100nm Wavelength of peak sensitivity: 880nm LED diameter: 5mm Operating voltage: 1.3V Viewing angle: 20° LED lens: black Front: convex Mounting: THT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1974 Stücke: Lieferzeit 7-14 Tag (e) |
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| QSE113 | ONSEMI |
QSE113 Phototransistors |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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RB520S30T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.6V Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8879 Stücke: Lieferzeit 7-14 Tag (e) |
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RB520S30T5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.6V Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 13965 Stücke: Lieferzeit 7-14 Tag (e) |
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RB521S30T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.5V Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 15138 Stücke: Lieferzeit 7-14 Tag (e) |
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RB751S40T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 0.5A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2992 Stücke: Lieferzeit 7-14 Tag (e) |
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| RB751V40T1G | ONSEMI |
RB751V40T1G SMD Schottky diodes |
auf Bestellung 2794 Stücke: Lieferzeit 7-14 Tag (e) |
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RFD12N06RLESM9A | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Power dissipation: 49W Case: DPAK Gate-source voltage: ±16V On-state resistance: 75mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement Technology: UltraFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1438 Stücke: Lieferzeit 7-14 Tag (e) |
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RFD14N05LSM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 14A Power dissipation: 48W Case: DPAK Gate-source voltage: ±10V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 166 Stücke: Lieferzeit 7-14 Tag (e) |
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RFD14N05LSM9A | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 14A Power dissipation: 48W Case: DPAK Gate-source voltage: ±10V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1583 Stücke: Lieferzeit 7-14 Tag (e) |
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RFD14N05SM9A | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 14A Power dissipation: 48W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5229 Stücke: Lieferzeit 7-14 Tag (e) |
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RFD16N05LSM9A | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 16A; 60W; DPAK Case: DPAK Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 80nC On-state resistance: 56mΩ Drain current: 16A Drain-source voltage: 50V Power dissipation: 60W Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2211 Stücke: Lieferzeit 7-14 Tag (e) |
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RFD16N06LESM9A | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 16A; 90W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 16A Power dissipation: 90W Case: DPAK Gate-source voltage: ±8V On-state resistance: 47mΩ Mounting: SMD Gate charge: 62nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 137 Stücke: Lieferzeit 7-14 Tag (e) |
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RFD3055LESM9A | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 11A Power dissipation: 38W Case: DPAK Gate-source voltage: ±16V On-state resistance: 0.107Ω Mounting: SMD Gate charge: 11.3nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2477 Stücke: Lieferzeit 7-14 Tag (e) |
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RFP12N10L | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 12A; 60W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Power dissipation: 60W Case: TO220AB Gate-source voltage: ±10V On-state resistance: 0.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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RFP50N06 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; 131W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 131W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 193 Stücke: Lieferzeit 7-14 Tag (e) |
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RFP70N06 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 70A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 70A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Gate charge: 156nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 492 Stücke: Lieferzeit 7-14 Tag (e) |
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RGF1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 8.5pF Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Power dissipation: 1.76W Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2726 Stücke: Lieferzeit 7-14 Tag (e) |
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| RHRG3060-F085 | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 90A; TO247-2; 45ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 90A Case: TO247-2 Reverse recovery time: 45ns Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 41 Stücke: Lieferzeit 7-14 Tag (e) |
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| RS1A | ONSEMI |
RS1A SMD universal diodes |
auf Bestellung 7489 Stücke: Lieferzeit 7-14 Tag (e) |
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| RS1D | ONSEMI |
RS1D SMD universal diodes |
auf Bestellung 6725 Stücke: Lieferzeit 7-14 Tag (e) |
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RS1J | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V Mounting: SMD Capacitance: 10pF Max. forward impulse current: 30A Case: DO214AC; SMA Features of semiconductor devices: fast switching; glass passivated Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 250ns Load current: 1A Power dissipation: 1.19W Max. forward voltage: 1.3V Max. off-state voltage: 0.6kV Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 507 Stücke: Lieferzeit 7-14 Tag (e) |
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RS1M | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Capacitance: 10pF Power dissipation: 1.19W Features of semiconductor devices: fast switching; glass passivated Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1837 Stücke: Lieferzeit 7-14 Tag (e) |
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RURG3060-F085 | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 90A; TO247-2; 80ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 90A Case: TO247-2 Reverse recovery time: 80ns Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 69 Stücke: Lieferzeit 7-14 Tag (e) |
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| S1AFL | ONSEMI |
S1AFL-ONS SMD universal diodes |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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S1B | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape Power dissipation: 1.4W Capacitance: 6.6pF Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6210 Stücke: Lieferzeit 7-14 Tag (e) |
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| S1D | ONSEMI |
S1D-ONS SMD universal diodes |
auf Bestellung 2076 Stücke: Lieferzeit 7-14 Tag (e) |
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| S1G | ONSEMI |
S1G-FAI SMD universal diodes |
auf Bestellung 4421 Stücke: Lieferzeit 7-14 Tag (e) |
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| S1K | ONSEMI |
S1K-ONS SMD universal diodes |
auf Bestellung 1867 Stücke: Lieferzeit 7-14 Tag (e) |
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| S1M | ONSEMI |
S1M-FAI SMD universal diodes |
auf Bestellung 5241 Stücke: Lieferzeit 7-14 Tag (e) |
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| S1MFL | ONSEMI |
S1MFL-ONS SMD universal diodes |
auf Bestellung 1127 Stücke: Lieferzeit 7-14 Tag (e) |
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| S2M | ONSEMI |
S2M-FAI SMD universal diodes |
auf Bestellung 964 Stücke: Lieferzeit 7-14 Tag (e) |
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| S310FA | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 100V; 3A; reel,tape Max. forward voltage: 0.85V Load current: 3A Max. forward impulse current: 80A Max. off-state voltage: 100V Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Case: SOD123F Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2495 Stücke: Lieferzeit 7-14 Tag (e) |
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| S3D | ONSEMI |
S3D-FAI SMD universal diodes |
auf Bestellung 2642 Stücke: Lieferzeit 7-14 Tag (e) |
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| S3M | ONSEMI |
S3M-FAI SMD universal diodes |
auf Bestellung 2570 Stücke: Lieferzeit 7-14 Tag (e) |
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SBAS16HT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.75V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD323 Max. forward voltage: 1.75V Max. forward impulse current: 36A Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry Max. load current: 1A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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SBAS16LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 30µA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1719 Stücke: Lieferzeit 7-14 Tag (e) |
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| SBAS16WT1G | ONSEMI |
SBAS16WT1G SMD universal diodes |
auf Bestellung 2125 Stücke: Lieferzeit 7-14 Tag (e) |
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SBAS16XV2T1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 1.25V; Ir: 30uA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD523 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 30µA Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3818 Stücke: Lieferzeit 7-14 Tag (e) |
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SBAS16XV2T5G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD523 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 50µA Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry Anzahl je Verpackung: 5 Stücke |
auf Bestellung 10666 Stücke: Lieferzeit 7-14 Tag (e) |
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SBAS21DW5T1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.2A; 50ns; SC88A; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: double independent Capacitance: 5pF Case: SC88A Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 0.1mA Power dissipation: 0.385W Kind of package: reel; tape Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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SBAS40-04LT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; reel,tape; 225mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: double series Capacitance: 5pF Max. forward voltage: 1V Leakage current: 1µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.225W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 460 Stücke: Lieferzeit 7-14 Tag (e) |
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SBAS40-06LT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; reel,tape; 225mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: common anode; double Capacitance: 5pF Max. forward voltage: 1V Leakage current: 1µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.225W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2500 Stücke: Lieferzeit 7-14 Tag (e) |
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SBAT54CLT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Capacitance: 10pF Max. forward voltage: 0.8V Max. load current: 0.3A Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.225W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2345 Stücke: Lieferzeit 7-14 Tag (e) |
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SBAT54SLT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Capacitance: 10pF Max. forward voltage: 0.8V Max. load current: 0.3A Leakage current: 2µA Max. forward impulse current: 1A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.225W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2154 Stücke: Lieferzeit 7-14 Tag (e) |
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| SBAT54T1G | ONSEMI |
SBAT54T1G SMD Schottky diodes |
auf Bestellung 2011 Stücke: Lieferzeit 7-14 Tag (e) |
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SBAT54XV2T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.2W Capacitance: 10pF Leakage current: 2µA Reverse recovery time: 5ns Max. load current: 0.3A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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| PZT3904T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; SOT223-4,TO261-4
Kind of package: reel; tape
Type of transistor: NPN
Case: SOT223-4; TO261-4
Collector current: 0.2A
Power dissipation: 1.5W
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 300MHz
Polarisation: bipolar
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; SOT223-4,TO261-4
Kind of package: reel; tape
Type of transistor: NPN
Case: SOT223-4; TO261-4
Collector current: 0.2A
Power dissipation: 1.5W
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 300MHz
Polarisation: bipolar
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 603 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 199+ | 0.36 EUR |
| 278+ | 0.26 EUR |
| 319+ | 0.22 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.15 EUR |
| PZTA06 |
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Hersteller: ONSEMI
PZTA06 NPN SMD transistors
PZTA06 NPN SMD transistors
auf Bestellung 3332 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 119+ | 0.6 EUR |
| 171+ | 0.42 EUR |
| 180+ | 0.4 EUR |
| PZTA42T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 497 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 239+ | 0.3 EUR |
| 317+ | 0.23 EUR |
| 358+ | 0.2 EUR |
| 414+ | 0.17 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.14 EUR |
| PZTA92T1G |
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Hersteller: ONSEMI
PZTA92T1G PNP SMD transistors
PZTA92T1G PNP SMD transistors
auf Bestellung 1673 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 119+ | 0.6 EUR |
| 455+ | 0.16 EUR |
| 481+ | 0.15 EUR |
| QED123 |
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Hersteller: ONSEMI
QED123 IR LEDs
QED123 IR LEDs
auf Bestellung 336 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 332+ | 0.22 EUR |
| 336+ | 0.21 EUR |
| QED123A4R0 |
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Hersteller: ONSEMI
QED123A4R0 IR LEDs
QED123A4R0 IR LEDs
auf Bestellung 1037 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 88+ | 0.82 EUR |
| 224+ | 0.32 EUR |
| 236+ | 0.3 EUR |
| QED223 |
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Hersteller: ONSEMI
QED223 IR LEDs
QED223 IR LEDs
auf Bestellung 253 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 181+ | 0.4 EUR |
| 253+ | 0.29 EUR |
| 1000+ | 0.18 EUR |
| QED234 |
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Hersteller: ONSEMI
QED234 IR LEDs
QED234 IR LEDs
auf Bestellung 99 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 99+ | 0.73 EUR |
| 113+ | 0.63 EUR |
| 309+ | 0.23 EUR |
| 1000+ | 0.14 EUR |
| QEE113 |
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Hersteller: ONSEMI
Category: IR LEDs
Description: IR transmitter; 940nm; transparent; 7.5mW; 50°; 1.5VDC; THT; 100mA
Type of diode: IR transmitter
Wavelength: 940nm
LED lens: transparent
Radiant power: 7.5mW
Viewing angle: 50°
Operating voltage: 1.5V DC
Mounting: THT
Dimensions: 4.44x2.54x5.08mm
LED current: 100mA
LED version: angular
Shape: rectangular
Wavelength of peak sensitivity: 940nm
Anzahl je Verpackung: 1 Stücke
Category: IR LEDs
Description: IR transmitter; 940nm; transparent; 7.5mW; 50°; 1.5VDC; THT; 100mA
Type of diode: IR transmitter
Wavelength: 940nm
LED lens: transparent
Radiant power: 7.5mW
Viewing angle: 50°
Operating voltage: 1.5V DC
Mounting: THT
Dimensions: 4.44x2.54x5.08mm
LED current: 100mA
LED version: angular
Shape: rectangular
Wavelength of peak sensitivity: 940nm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 302 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 109+ | 0.66 EUR |
| 126+ | 0.57 EUR |
| 140+ | 0.51 EUR |
| 165+ | 0.43 EUR |
| 194+ | 0.37 EUR |
| 232+ | 0.31 EUR |
| QEE123 |
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Hersteller: ONSEMI
QEE123 IR LEDs
QEE123 IR LEDs
auf Bestellung 121 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 53+ | 1.37 EUR |
| 108+ | 0.67 EUR |
| 114+ | 0.63 EUR |
| QRD1114 | ![]() |
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Hersteller: ONSEMI
Category: PCB Photoelectric Sensors
Description: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB
Type of sensor: photoelectric
Operation mode: diffuse-reflective
Output configuration: NPN
Supply voltage: 5V DC
Mounting: PCB
Body dimensions: 4.39x6.1x4.65mm
Operating temperature: -40...85°C
Anzahl je Verpackung: 1 Stücke
Category: PCB Photoelectric Sensors
Description: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB
Type of sensor: photoelectric
Operation mode: diffuse-reflective
Output configuration: NPN
Supply voltage: 5V DC
Mounting: PCB
Body dimensions: 4.39x6.1x4.65mm
Operating temperature: -40...85°C
Anzahl je Verpackung: 1 Stücke
auf Bestellung 179 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 1.72 EUR |
| 45+ | 1.6 EUR |
| 46+ | 1.59 EUR |
| QSD123 |
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Hersteller: ONSEMI
Category: Phototransistors
Description: Phototransistor; THT; 5mm; λp max: 880nm; 30V; 24°
LED lens: black with IR filter
Mounting: THT
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 880nm
LED diameter: 5mm
Viewing angle: 24°
Collector-emitter voltage: 30V
Anzahl je Verpackung: 1 Stücke
Category: Phototransistors
Description: Phototransistor; THT; 5mm; λp max: 880nm; 30V; 24°
LED lens: black with IR filter
Mounting: THT
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 880nm
LED diameter: 5mm
Viewing angle: 24°
Collector-emitter voltage: 30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 603 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 200+ | 0.36 EUR |
| 266+ | 0.27 EUR |
| 307+ | 0.23 EUR |
| QSD2030 |
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Hersteller: ONSEMI
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 400÷1100nm; 40°; 1.3V; convex
Type of photoelement: photodiode
Wavelength: 400...1100nm
Wavelength of peak sensitivity: 880nm
LED diameter: 5mm
Operating voltage: 1.3V
Viewing angle: 40°
LED lens: transparent
Front: convex
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 400÷1100nm; 40°; 1.3V; convex
Type of photoelement: photodiode
Wavelength: 400...1100nm
Wavelength of peak sensitivity: 880nm
LED diameter: 5mm
Operating voltage: 1.3V
Viewing angle: 40°
LED lens: transparent
Front: convex
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 503 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| 161+ | 0.45 EUR |
| 182+ | 0.39 EUR |
| 216+ | 0.33 EUR |
| 250+ | 0.3 EUR |
| 1000+ | 0.29 EUR |
| QSD2030F |
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Hersteller: ONSEMI
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 700÷1100nm; 20°; 1.3V; convex; black
Type of photoelement: photodiode
Wavelength: 700...1100nm
Wavelength of peak sensitivity: 880nm
LED diameter: 5mm
Operating voltage: 1.3V
Viewing angle: 20°
LED lens: black
Front: convex
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 700÷1100nm; 20°; 1.3V; convex; black
Type of photoelement: photodiode
Wavelength: 700...1100nm
Wavelength of peak sensitivity: 880nm
LED diameter: 5mm
Operating voltage: 1.3V
Viewing angle: 20°
LED lens: black
Front: convex
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1974 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 105+ | 0.69 EUR |
| 149+ | 0.48 EUR |
| 198+ | 0.36 EUR |
| 235+ | 0.3 EUR |
| QSE113 |
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Hersteller: ONSEMI
QSE113 Phototransistors
QSE113 Phototransistors
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.76 EUR |
| 35+ | 2.04 EUR |
| 96+ | 0.74 EUR |
| 250+ | 0.47 EUR |
| RB520S30T1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8879 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 910+ | 0.079 EUR |
| 1316+ | 0.054 EUR |
| 1548+ | 0.046 EUR |
| 2243+ | 0.032 EUR |
| 2618+ | 0.027 EUR |
| 3312+ | 0.022 EUR |
| RB520S30T5G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13965 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 1112+ | 0.064 EUR |
| 1471+ | 0.049 EUR |
| 1873+ | 0.038 EUR |
| 2703+ | 0.026 EUR |
| 3106+ | 0.023 EUR |
| 3572+ | 0.02 EUR |
| RB521S30T1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15138 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 715+ | 0.1 EUR |
| 962+ | 0.074 EUR |
| 1316+ | 0.054 EUR |
| 1544+ | 0.046 EUR |
| 2213+ | 0.032 EUR |
| 2565+ | 0.028 EUR |
| 2809+ | 0.025 EUR |
| RB751S40T1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2992 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 556+ | 0.13 EUR |
| 807+ | 0.089 EUR |
| 1083+ | 0.066 EUR |
| 1232+ | 0.058 EUR |
| 1634+ | 0.044 EUR |
| 1839+ | 0.039 EUR |
| 1961+ | 0.036 EUR |
| RB751V40T1G |
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Hersteller: ONSEMI
RB751V40T1G SMD Schottky diodes
RB751V40T1G SMD Schottky diodes
auf Bestellung 2794 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 531+ | 0.13 EUR |
| 2273+ | 0.031 EUR |
| 2404+ | 0.03 EUR |
| 15000+ | 0.029 EUR |
| RFD12N06RLESM9A |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: UltraFET®
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: UltraFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1438 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 1.23 EUR |
| 74+ | 0.97 EUR |
| 94+ | 0.76 EUR |
| 100+ | 0.72 EUR |
| RFD14N05LSM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 14A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 14A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 166 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 77+ | 0.93 EUR |
| 119+ | 0.6 EUR |
| RFD14N05LSM9A |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 14A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 14A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1583 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 73+ | 0.99 EUR |
| 102+ | 0.7 EUR |
| 146+ | 0.49 EUR |
| 250+ | 0.46 EUR |
| RFD14N05SM9A |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 14A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 14A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5229 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| 124+ | 0.58 EUR |
| 130+ | 0.55 EUR |
| 133+ | 0.54 EUR |
| RFD16N05LSM9A |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 60W; DPAK
Case: DPAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 56mΩ
Drain current: 16A
Drain-source voltage: 50V
Power dissipation: 60W
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 60W; DPAK
Case: DPAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 56mΩ
Drain current: 16A
Drain-source voltage: 50V
Power dissipation: 60W
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2211 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 55+ | 1.32 EUR |
| 68+ | 1.06 EUR |
| 75+ | 0.96 EUR |
| 93+ | 0.77 EUR |
| RFD16N06LESM9A |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±8V
On-state resistance: 47mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±8V
On-state resistance: 47mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 137 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 1.43 EUR |
| RFD3055LESM9A |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2477 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 129+ | 0.56 EUR |
| 160+ | 0.45 EUR |
| RFP12N10L | ![]() |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 8.94 EUR |
| 10+ | 7.15 EUR |
| RFP50N06 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 131W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 131W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 131W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 131W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 193 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 1.59 EUR |
| 48+ | 1.52 EUR |
| RFP70N06 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 492 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 2.22 EUR |
| 39+ | 1.84 EUR |
| 50+ | 1.73 EUR |
| RGF1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2726 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 242+ | 0.3 EUR |
| 304+ | 0.24 EUR |
| 500+ | 0.21 EUR |
| RHRG3060-F085 |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 90A; TO247-2; 45ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 90A
Case: TO247-2
Reverse recovery time: 45ns
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 90A; TO247-2; 45ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 90A
Case: TO247-2
Reverse recovery time: 45ns
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.42 EUR |
| 24+ | 3.07 EUR |
| 27+ | 2.72 EUR |
| 30+ | 2.53 EUR |
| 150+ | 2.45 EUR |
| 450+ | 2.35 EUR |
| RS1A |
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Hersteller: ONSEMI
RS1A SMD universal diodes
RS1A SMD universal diodes
auf Bestellung 7489 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 296+ | 0.24 EUR |
| 848+ | 0.084 EUR |
| 910+ | 0.079 EUR |
| RS1D |
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Hersteller: ONSEMI
RS1D SMD universal diodes
RS1D SMD universal diodes
auf Bestellung 6725 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 195+ | 0.37 EUR |
| 472+ | 0.15 EUR |
| 500+ | 0.14 EUR |
| RS1J |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Case: DO214AC; SMA
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Power dissipation: 1.19W
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Case: DO214AC; SMA
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Power dissipation: 1.19W
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 507 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 228+ | 0.31 EUR |
| 323+ | 0.22 EUR |
| 410+ | 0.17 EUR |
| 491+ | 0.15 EUR |
| 507+ | 0.14 EUR |
| RS1M |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
Power dissipation: 1.19W
Features of semiconductor devices: fast switching; glass passivated
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
Power dissipation: 1.19W
Features of semiconductor devices: fast switching; glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1837 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 353+ | 0.2 EUR |
| 477+ | 0.15 EUR |
| 544+ | 0.13 EUR |
| 658+ | 0.11 EUR |
| 747+ | 0.096 EUR |
| 1000+ | 0.09 EUR |
| RURG3060-F085 |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 90A; TO247-2; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 90A
Case: TO247-2
Reverse recovery time: 80ns
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 90A; TO247-2; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 90A
Case: TO247-2
Reverse recovery time: 80ns
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 69 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.42 EUR |
| 18+ | 4.03 EUR |
| 23+ | 3.19 EUR |
| 30+ | 3.12 EUR |
| S1AFL |
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Hersteller: ONSEMI
S1AFL-ONS SMD universal diodes
S1AFL-ONS SMD universal diodes
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 582+ | 0.12 EUR |
| S1B |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.4W
Capacitance: 6.6pF
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.4W
Capacitance: 6.6pF
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6210 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 295+ | 0.24 EUR |
| 451+ | 0.16 EUR |
| 587+ | 0.12 EUR |
| 742+ | 0.096 EUR |
| 1000+ | 0.085 EUR |
| 2000+ | 0.079 EUR |
| S1D |
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Hersteller: ONSEMI
S1D-ONS SMD universal diodes
S1D-ONS SMD universal diodes
auf Bestellung 2076 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 273+ | 0.26 EUR |
| 849+ | 0.084 EUR |
| 898+ | 0.08 EUR |
| 5000+ | 0.078 EUR |
| S1G |
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Hersteller: ONSEMI
S1G-FAI SMD universal diodes
S1G-FAI SMD universal diodes
auf Bestellung 4421 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 236+ | 0.3 EUR |
| 807+ | 0.089 EUR |
| 848+ | 0.084 EUR |
| S1K |
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Hersteller: ONSEMI
S1K-ONS SMD universal diodes
S1K-ONS SMD universal diodes
auf Bestellung 1867 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 374+ | 0.19 EUR |
| 740+ | 0.097 EUR |
| 783+ | 0.091 EUR |
| 1000+ | 0.088 EUR |
| S1M |
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Hersteller: ONSEMI
S1M-FAI SMD universal diodes
S1M-FAI SMD universal diodes
auf Bestellung 5241 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 323+ | 0.22 EUR |
| 1040+ | 0.069 EUR |
| 1099+ | 0.065 EUR |
| S1MFL |
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Hersteller: ONSEMI
S1MFL-ONS SMD universal diodes
S1MFL-ONS SMD universal diodes
auf Bestellung 1127 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 240+ | 0.3 EUR |
| 942+ | 0.076 EUR |
| 997+ | 0.072 EUR |
| S2M |
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Hersteller: ONSEMI
S2M-FAI SMD universal diodes
S2M-FAI SMD universal diodes
auf Bestellung 964 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 186+ | 0.38 EUR |
| 582+ | 0.12 EUR |
| S310FA |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 3A; reel,tape
Max. forward voltage: 0.85V
Load current: 3A
Max. forward impulse current: 80A
Max. off-state voltage: 100V
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SOD123F
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 3A; reel,tape
Max. forward voltage: 0.85V
Load current: 3A
Max. forward impulse current: 80A
Max. off-state voltage: 100V
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SOD123F
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2495 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 204+ | 0.35 EUR |
| 233+ | 0.31 EUR |
| 249+ | 0.29 EUR |
| 252+ | 0.28 EUR |
| S3D |
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Hersteller: ONSEMI
S3D-FAI SMD universal diodes
S3D-FAI SMD universal diodes
auf Bestellung 2642 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 305+ | 0.23 EUR |
| 323+ | 0.22 EUR |
| S3M |
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Hersteller: ONSEMI
S3M-FAI SMD universal diodes
S3M-FAI SMD universal diodes
auf Bestellung 2570 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| 332+ | 0.22 EUR |
| 350+ | 0.2 EUR |
| SBAS16HT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.75V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.75V
Max. forward impulse current: 36A
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Max. load current: 1A
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.75V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.75V
Max. forward impulse current: 36A
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Max. load current: 1A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| SBAS16LT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1719 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 758+ | 0.094 EUR |
| 848+ | 0.084 EUR |
| 1289+ | 0.055 EUR |
| SBAS16WT1G |
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Hersteller: ONSEMI
SBAS16WT1G SMD universal diodes
SBAS16WT1G SMD universal diodes
auf Bestellung 2125 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 236+ | 0.3 EUR |
| 788+ | 0.091 EUR |
| 832+ | 0.086 EUR |
| 3000+ | 0.083 EUR |
| SBAS16XV2T1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3818 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1250+ | 0.057 EUR |
| 1316+ | 0.054 EUR |
| 1471+ | 0.049 EUR |
| 1713+ | 0.042 EUR |
| 2203+ | 0.032 EUR |
| 2874+ | 0.025 EUR |
| 3165+ | 0.023 EUR |
| SBAS16XV2T5G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
auf Bestellung 10666 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 340+ | 0.21 EUR |
| 455+ | 0.16 EUR |
| 535+ | 0.13 EUR |
| 590+ | 0.12 EUR |
| 8000+ | 0.11 EUR |
| SBAS21DW5T1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SC88A; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Capacitance: 5pF
Case: SC88A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.385W
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SC88A; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Capacitance: 5pF
Case: SC88A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.385W
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 459+ | 0.16 EUR |
| 593+ | 0.12 EUR |
| 920+ | 0.078 EUR |
| 1090+ | 0.066 EUR |
| 1112+ | 0.064 EUR |
| SBAS40-04LT1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double series
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double series
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 460 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 455+ | 0.16 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.072 EUR |
| 3000+ | 0.048 EUR |
| SBAS40-06LT1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 650+ | 0.11 EUR |
| 1080+ | 0.066 EUR |
| 1446+ | 0.049 EUR |
| SBAT54CLT1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2345 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 500+ | 0.14 EUR |
| 625+ | 0.11 EUR |
| 736+ | 0.097 EUR |
| 1220+ | 0.059 EUR |
| SBAT54SLT1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 1A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 1A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2154 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 472+ | 0.15 EUR |
| 559+ | 0.13 EUR |
| 633+ | 0.11 EUR |
| 721+ | 0.099 EUR |
| 966+ | 0.074 EUR |
| 1090+ | 0.066 EUR |
| SBAT54T1G |
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Hersteller: ONSEMI
SBAT54T1G SMD Schottky diodes
SBAT54T1G SMD Schottky diodes
auf Bestellung 2011 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 284+ | 0.25 EUR |
| 1119+ | 0.064 EUR |
| 1183+ | 0.06 EUR |
| 6000+ | 0.059 EUR |
| SBAT54XV2T1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 10pF
Leakage current: 2µA
Reverse recovery time: 5ns
Max. load current: 0.3A
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 10pF
Leakage current: 2µA
Reverse recovery time: 5ns
Max. load current: 0.3A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.39 EUR |
| 50+ | 1.43 EUR |
| 100+ | 0.72 EUR |
























