| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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NTR0202PLT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.4A Gate charge: 2.18nC Power dissipation: 0.225W On-state resistance: 0.55Ω Gate-source voltage: ±20V Case: SOT23 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 988 Stücke: Lieferzeit 7-14 Tag (e) |
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| NTR1P02LT1G | ONSEMI |
NTR1P02LT1G SMD P channel transistors |
auf Bestellung 2216 Stücke: Lieferzeit 7-14 Tag (e) |
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| NTR1P02T1G | ONSEMI |
NTR1P02T1G SMD P channel transistors |
auf Bestellung 140 Stücke: Lieferzeit 7-14 Tag (e) |
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| NTR2101PT1G | ONSEMI |
NTR2101PT1G SMD P channel transistors |
auf Bestellung 1431 Stücke: Lieferzeit 7-14 Tag (e) |
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| NTR3C21NZT1G | ONSEMI |
NTR3C21NZT1G SMD N channel transistors |
auf Bestellung 2975 Stücke: Lieferzeit 7-14 Tag (e) |
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| NTR4003NT1G | ONSEMI |
NTR4003NT1G SMD N channel transistors |
auf Bestellung 4015 Stücke: Lieferzeit 7-14 Tag (e) |
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| NTR4101PT1G | ONSEMI |
NTR4101PT1G SMD P channel transistors |
auf Bestellung 2529 Stücke: Lieferzeit 7-14 Tag (e) |
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| NTR4170NT1G | ONSEMI |
NTR4170NT1G SMD N channel transistors |
auf Bestellung 2500 Stücke: Lieferzeit 7-14 Tag (e) |
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| NTR4171PT1G | ONSEMI |
NTR4171PT1G SMD P channel transistors |
auf Bestellung 568 Stücke: Lieferzeit 7-14 Tag (e) |
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NTR4501NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.4A Pulsed drain current: 10A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6921 Stücke: Lieferzeit 7-14 Tag (e) |
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NTR4503NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 730mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 0.73W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 3.6nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2846 Stücke: Lieferzeit 7-14 Tag (e) |
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| NTR5103NT1G | ONSEMI |
NTR5103NT1G SMD N channel transistors |
auf Bestellung 1268 Stücke: Lieferzeit 7-14 Tag (e) |
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NTR5105PT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -0.141A; 0.347W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.141A Power dissipation: 0.347W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1144 Stücke: Lieferzeit 7-14 Tag (e) |
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NTR5198NLT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: SOT23 On-state resistance: 155mΩ Power dissipation: 0.6W Drain current: 1.6A Gate-source voltage: ±20V Drain-source voltage: 60V Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2809 Stücke: Lieferzeit 7-14 Tag (e) |
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NTS2101PT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323 Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Case: SC70; SOT323 Polarisation: unipolar Drain-source voltage: -8V Drain current: -1.1A On-state resistance: 0.1Ω Power dissipation: 0.29W Gate-source voltage: ±8V Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 900 Stücke: Lieferzeit 7-14 Tag (e) |
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NTS4001NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 0.2A; 0.33W; SC70,SOT323 Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.33W Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 0.2A On-state resistance: 1.5Ω Gate-source voltage: ±20V Drain-source voltage: 30V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2339 Stücke: Lieferzeit 7-14 Tag (e) |
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NTS4101PT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -0.62A; 0.329W; SC70,SOT323 Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Case: SC70; SOT323 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.62A Gate charge: 6.4nC On-state resistance: 0.16Ω Power dissipation: 0.329W Gate-source voltage: ±8V Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2933 Stücke: Lieferzeit 7-14 Tag (e) |
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| NTS4173PT1G | ONSEMI |
NTS4173PT1G SMD P channel transistors |
auf Bestellung 2220 Stücke: Lieferzeit 7-14 Tag (e) |
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| NTS4409NT1G | ONSEMI |
NTS4409NT1G SMD N channel transistors |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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NTZD3152PT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -20V; -0.43A; 0.25W; SOT563 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.43A Power dissipation: 0.25W Case: SOT563 Gate-source voltage: ±6V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.7nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1830 Stücke: Lieferzeit 7-14 Tag (e) |
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NTZD3154NT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 0.54A; 0.25W; SOT563 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.54A Power dissipation: 0.25W Case: SOT563 Gate-source voltage: ±7V On-state resistance: 0.9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.5nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1393 Stücke: Lieferzeit 7-14 Tag (e) |
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NTZD3155CT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 0.39/-0.31A Power dissipation: 0.25W Case: SOT563F Gate-source voltage: ±6V On-state resistance: 400/500mΩ Mounting: SMD Gate charge: 1.5/1.7nC Kind of package: reel; tape Kind of channel: enhancement Kind of transistor: complementary pair Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3198 Stücke: Lieferzeit 7-14 Tag (e) |
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NTZD3155CT2G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 0.39/-0.31A Power dissipation: 0.25W Case: SOT563F Gate-source voltage: ±6V On-state resistance: 0.55/0.9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3459 Stücke: Lieferzeit 7-14 Tag (e) |
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NUD4001DR2G | ONSEMI |
Category: LED driversDescription: IC: driver; LED driver; SO8; 500mA; 28V; Ch: 1; PWM Type of integrated circuit: driver Kind of integrated circuit: LED driver Output current: 0.5A Case: SO8 Mounting: SMD Number of channels: 1 Operating temperature: -40...125°C Integrated circuit features: PWM Output voltage: 28V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1990 Stücke: Lieferzeit 7-14 Tag (e) |
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NUF2042XV6T1G | ONSEMI |
Category: Filters - integrated circuitsDescription: Filter: digital; line terminator; lowpass,EMI; SOT563; Ch: 2 Type of filter: digital Kind of integrated circuit: line terminator Kind of filter: EMI; lowpass Case: SOT563 Mounting: SMD Number of channels: 2 Application: USB port ESD protection Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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NUF2101MT1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; bidirectional; TSOP6; Ch: 3; reel,tape Kind of package: reel; tape Case: TSOP6 Type of diode: TVS array Mounting: SMD Number of channels: 3 Application: USB Semiconductor structure: bidirectional Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2180 Stücke: Lieferzeit 7-14 Tag (e) |
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| NUP1301ML3T1G | ONSEMI |
NUP1301ML3T1G Protection diodes - arrays |
auf Bestellung 2740 Stücke: Lieferzeit 7-14 Tag (e) |
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NUP2105LT1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23 Type of diode: TVS array Breakdown voltage: 26.2...32V Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional; double Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Number of channels: 2 Kind of package: reel; tape Application: CAN Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6048 Stücke: Lieferzeit 7-14 Tag (e) |
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| NUP2114UPXV5T1G | ONSEMI |
NUP2114UPXV5T1G Protection diodes - arrays |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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NUP2201MR6T1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6V; 25A; 500W; unidirectional; TSOP6; Ch: 2; ESD Mounting: SMD Kind of package: reel; tape Type of diode: TVS array Semiconductor structure: unidirectional Leakage current: 5µA Number of channels: 2 Max. forward impulse current: 25A Breakdown voltage: 6V Peak pulse power dissipation: 0.5kW Case: TSOP6 Application: universal Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5369 Stücke: Lieferzeit 7-14 Tag (e) |
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| NUP2301MW6T1G | ONSEMI |
NUP2301MW6T1G Protection diodes - arrays |
auf Bestellung 2668 Stücke: Lieferzeit 7-14 Tag (e) |
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| NUP4114HMR6T1G | ONSEMI |
NUP4114HMR6T1G Protection diodes - arrays |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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NUP4114UCLW1T2G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.5V; 12A; unidirectional; SC88; Ch: 4; reel,tape Case: SC88 Version: ESD Application: universal Mounting: SMD Type of diode: TVS array Semiconductor structure: unidirectional Leakage current: 1µA Number of channels: 4 Max. off-state voltage: 5.5V Breakdown voltage: 6.5V Max. forward impulse current: 12A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1478 Stücke: Lieferzeit 7-14 Tag (e) |
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| NUP4114UCW1T2G | ONSEMI |
NUP4114UCW1T2G Protection diodes - arrays |
auf Bestellung 2603 Stücke: Lieferzeit 7-14 Tag (e) |
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NUP4301MR6T1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: diode arrays; SC74; Ch: 4; reel,tape; ESD Type of diode: diode arrays Mounting: SMD Case: SC74 Number of channels: 4 Kind of package: reel; tape Version: ESD Max. off-state voltage: 70V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2750 Stücke: Lieferzeit 7-14 Tag (e) |
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| NVD5C688NLT4G | ONSEMI |
NVD5C688NLT4G SMD N channel transistors |
auf Bestellung 1712 Stücke: Lieferzeit 7-14 Tag (e) |
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NVF2955T1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223 Kind of package: reel; tape Case: SOT223 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Drain-source voltage: -60V Drain current: -2.6A Gate charge: 14.3nC On-state resistance: 154mΩ Power dissipation: 2.3W Gate-source voltage: ±20V Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 710 Stücke: Lieferzeit 7-14 Tag (e) |
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| NVJD5121NT1G | ONSEMI |
NVJD5121NT1G Multi channel transistors |
auf Bestellung 3050 Stücke: Lieferzeit 7-14 Tag (e) |
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| NVMFS6H800NLT1G | ONSEMI |
NVMFS6H800NLT1G SMD N channel transistors |
auf Bestellung 1490 Stücke: Lieferzeit 7-14 Tag (e) |
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NVR4501NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.4A Pulsed drain current: 10A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2341 Stücke: Lieferzeit 7-14 Tag (e) |
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| NVR5124PLT1G | ONSEMI |
NVR5124PLT1G SMD P channel transistors |
auf Bestellung 1830 Stücke: Lieferzeit 7-14 Tag (e) |
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NVR5198NLT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: SOT23 Gate charge: 5.1nC On-state resistance: 0.205Ω Power dissipation: 0.4W Drain current: 1.2A Gate-source voltage: ±20V Pulsed drain current: 27A Drain-source voltage: 60V Polarisation: unipolar Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1493 Stücke: Lieferzeit 7-14 Tag (e) |
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| NVTFS5116PLTAG | ONSEMI |
NVTFS5116PLTAG SMD P channel transistors |
auf Bestellung 1044 Stücke: Lieferzeit 7-14 Tag (e) |
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NVTJD4001NT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.18A Power dissipation: 0.272W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2910 Stücke: Lieferzeit 7-14 Tag (e) |
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NVTR4503NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.5A Power dissipation: 0.73W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 112 Stücke: Lieferzeit 7-14 Tag (e) |
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| NZT560A | ONSEMI |
NZT560A NPN SMD transistors |
auf Bestellung 3345 Stücke: Lieferzeit 7-14 Tag (e) |
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NZT605 | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 110V; 1.5A; 1W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 110V Collector current: 1.5A Power dissipation: 1W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 493 Stücke: Lieferzeit 7-14 Tag (e) |
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| NZT7053 | ONSEMI |
NZT7053 NPN SMD Darlington transistors |
auf Bestellung 3957 Stücke: Lieferzeit 7-14 Tag (e) |
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| PACDN042Y3R | ONSEMI |
PACDN042Y3R Protection diodes - arrays |
auf Bestellung 2042 Stücke: Lieferzeit 7-14 Tag (e) |
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PCA9306DTR2G | ONSEMI |
Category: Level translatorsDescription: IC: digital; bidirectional,logic level voltage translator; Ch: 2 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; logic level voltage translator Number of channels: 2 Case: TSSOP8 Kind of package: reel; tape Mounting: SMD Operating temperature: -55...125°C Supply voltage: 1...3.6V DC Number of outputs: 2 Number of inputs: 2 Kind of output: open drain Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1683 Stücke: Lieferzeit 7-14 Tag (e) |
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PCA9306USG | ONSEMI |
Category: Level translatorsDescription: IC: digital; bidirectional,logic level voltage translator; Ch: 2 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; logic level voltage translator Number of channels: 2 Case: US8 Kind of package: reel; tape Mounting: SMD Operating temperature: -55...125°C Supply voltage: 1...3.6V DC Number of outputs: 2 Number of inputs: 2 Kind of output: open drain Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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PN2222ABU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Current gain: 100...300 Mounting: THT Kind of package: bulk Frequency: 300MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5563 Stücke: Lieferzeit 7-14 Tag (e) |
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PN2222ATA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: Ammo Pack Frequency: 300MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 808 Stücke: Lieferzeit 7-14 Tag (e) |
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PN2222ATF | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: reel; tape Frequency: 300MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 549 Stücke: Lieferzeit 7-14 Tag (e) |
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PN2907ATFR | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.8A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: reel; tape Frequency: 200MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1904 Stücke: Lieferzeit 7-14 Tag (e) |
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PZT2222AT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4316 Stücke: Lieferzeit 7-14 Tag (e) |
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PZT2907AT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 0.6A; 1.5W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 891 Stücke: Lieferzeit 7-14 Tag (e) |
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PZT3904T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; SOT223-4,TO261-4 Kind of package: reel; tape Type of transistor: NPN Case: SOT223-4; TO261-4 Collector current: 0.2A Power dissipation: 1.5W Current gain: 100...300 Collector-emitter voltage: 40V Frequency: 300MHz Polarisation: bipolar Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 603 Stücke: Lieferzeit 7-14 Tag (e) |
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| PZTA06 | ONSEMI |
PZTA06 NPN SMD transistors |
auf Bestellung 3332 Stücke: Lieferzeit 7-14 Tag (e) |
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PZTA42T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 40 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 497 Stücke: Lieferzeit 7-14 Tag (e) |
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| NTR0202PLT1G |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.4A
Gate charge: 2.18nC
Power dissipation: 0.225W
On-state resistance: 0.55Ω
Gate-source voltage: ±20V
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.4A
Gate charge: 2.18nC
Power dissipation: 0.225W
On-state resistance: 0.55Ω
Gate-source voltage: ±20V
Case: SOT23
Anzahl je Verpackung: 1 Stücke
auf Bestellung 988 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 715+ | 0.1 EUR |
| 887+ | 0.081 EUR |
| 981+ | 0.073 EUR |
| 1000+ | 0.072 EUR |
| 1500+ | 0.053 EUR |
| NTR1P02LT1G |
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Hersteller: ONSEMI
NTR1P02LT1G SMD P channel transistors
NTR1P02LT1G SMD P channel transistors
auf Bestellung 2216 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 770+ | 0.093 EUR |
| 820+ | 0.087 EUR |
| NTR1P02T1G |
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Hersteller: ONSEMI
NTR1P02T1G SMD P channel transistors
NTR1P02T1G SMD P channel transistors
auf Bestellung 140 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 140+ | 0.51 EUR |
| 184+ | 0.39 EUR |
| 506+ | 0.14 EUR |
| 9000+ | 0.086 EUR |
| NTR2101PT1G |
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Hersteller: ONSEMI
NTR2101PT1G SMD P channel transistors
NTR2101PT1G SMD P channel transistors
auf Bestellung 1431 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 150+ | 0.48 EUR |
| 575+ | 0.12 EUR |
| 9000+ | 0.11 EUR |
| NTR3C21NZT1G |
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Hersteller: ONSEMI
NTR3C21NZT1G SMD N channel transistors
NTR3C21NZT1G SMD N channel transistors
auf Bestellung 2975 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 153+ | 0.47 EUR |
| 486+ | 0.15 EUR |
| 511+ | 0.14 EUR |
| NTR4003NT1G |
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Hersteller: ONSEMI
NTR4003NT1G SMD N channel transistors
NTR4003NT1G SMD N channel transistors
auf Bestellung 4015 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 837+ | 0.086 EUR |
| 1819+ | 0.039 EUR |
| 1924+ | 0.037 EUR |
| NTR4101PT1G |
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Hersteller: ONSEMI
NTR4101PT1G SMD P channel transistors
NTR4101PT1G SMD P channel transistors
auf Bestellung 2529 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 263+ | 0.27 EUR |
| 1040+ | 0.069 EUR |
| 1099+ | 0.065 EUR |
| NTR4170NT1G |
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Hersteller: ONSEMI
NTR4170NT1G SMD N channel transistors
NTR4170NT1G SMD N channel transistors
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 150+ | 0.48 EUR |
| 428+ | 0.17 EUR |
| 455+ | 0.16 EUR |
| NTR4171PT1G |
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Hersteller: ONSEMI
NTR4171PT1G SMD P channel transistors
NTR4171PT1G SMD P channel transistors
auf Bestellung 568 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 208+ | 0.34 EUR |
| 568+ | 0.13 EUR |
| 3000+ | 0.11 EUR |
| NTR4501NT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6921 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 313+ | 0.23 EUR |
| 447+ | 0.16 EUR |
| 599+ | 0.12 EUR |
| 677+ | 0.11 EUR |
| 889+ | 0.081 EUR |
| 1000+ | 0.073 EUR |
| 1500+ | 0.068 EUR |
| NTR4503NT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 730mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.73W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 730mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.73W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2846 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 385+ | 0.19 EUR |
| 451+ | 0.16 EUR |
| 544+ | 0.13 EUR |
| 596+ | 0.12 EUR |
| 658+ | 0.11 EUR |
| 715+ | 0.1 EUR |
| 1000+ | 0.094 EUR |
| NTR5103NT1G |
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Hersteller: ONSEMI
NTR5103NT1G SMD N channel transistors
NTR5103NT1G SMD N channel transistors
auf Bestellung 1268 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 373+ | 0.19 EUR |
| 1268+ | 0.056 EUR |
| 9000+ | 0.038 EUR |
| NTR5105PT1G |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.141A; 0.347W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.141A
Power dissipation: 0.347W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.141A; 0.347W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.141A
Power dissipation: 0.347W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1144 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 544+ | 0.13 EUR |
| 782+ | 0.092 EUR |
| 906+ | 0.079 EUR |
| 946+ | 0.076 EUR |
| NTR5198NLT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
On-state resistance: 155mΩ
Power dissipation: 0.6W
Drain current: 1.6A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
On-state resistance: 155mΩ
Power dissipation: 0.6W
Drain current: 1.6A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2809 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 186+ | 0.39 EUR |
| 319+ | 0.22 EUR |
| 391+ | 0.18 EUR |
| 516+ | 0.14 EUR |
| 596+ | 0.12 EUR |
| 650+ | 0.11 EUR |
| 1000+ | 0.1 EUR |
| NTS2101PT1G |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SC70; SOT323
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -1.1A
On-state resistance: 0.1Ω
Power dissipation: 0.29W
Gate-source voltage: ±8V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SC70; SOT323
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -1.1A
On-state resistance: 0.1Ω
Power dissipation: 0.29W
Gate-source voltage: ±8V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 900 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 253+ | 0.28 EUR |
| 280+ | 0.26 EUR |
| 307+ | 0.23 EUR |
| 341+ | 0.21 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.13 EUR |
| NTS4001NT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.2A; 0.33W; SC70,SOT323
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.33W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.2A
On-state resistance: 1.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.2A; 0.33W; SC70,SOT323
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.33W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.2A
On-state resistance: 1.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2339 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 511+ | 0.14 EUR |
| 596+ | 0.12 EUR |
| 881+ | 0.081 EUR |
| 1011+ | 0.071 EUR |
| 1150+ | 0.062 EUR |
| 1229+ | 0.058 EUR |
| NTS4101PT1G |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.62A; 0.329W; SC70,SOT323
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SC70; SOT323
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.62A
Gate charge: 6.4nC
On-state resistance: 0.16Ω
Power dissipation: 0.329W
Gate-source voltage: ±8V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.62A; 0.329W; SC70,SOT323
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SC70; SOT323
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.62A
Gate charge: 6.4nC
On-state resistance: 0.16Ω
Power dissipation: 0.329W
Gate-source voltage: ±8V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2933 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 257+ | 0.28 EUR |
| 400+ | 0.18 EUR |
| 481+ | 0.15 EUR |
| 685+ | 0.1 EUR |
| 1000+ | 0.093 EUR |
| NTS4173PT1G |
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Hersteller: ONSEMI
NTS4173PT1G SMD P channel transistors
NTS4173PT1G SMD P channel transistors
auf Bestellung 2220 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 221+ | 0.32 EUR |
| 770+ | 0.093 EUR |
| 807+ | 0.089 EUR |
| 3000+ | 0.087 EUR |
| NTS4409NT1G |
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Hersteller: ONSEMI
NTS4409NT1G SMD N channel transistors
NTS4409NT1G SMD N channel transistors
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 11.91 EUR |
| 161+ | 0.44 EUR |
| 441+ | 0.16 EUR |
| 3000+ | 0.1 EUR |
| NTZD3152PT1G |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.43A; 0.25W; SOT563
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.43A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.7nC
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.43A; 0.25W; SOT563
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.43A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.7nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1830 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 291+ | 0.25 EUR |
| 365+ | 0.2 EUR |
| 511+ | 0.14 EUR |
| NTZD3154NT1G |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.54A; 0.25W; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.54A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±7V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.54A; 0.25W; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.54A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±7V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1393 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 186+ | 0.39 EUR |
| 236+ | 0.3 EUR |
| 283+ | 0.25 EUR |
| 463+ | 0.15 EUR |
| 562+ | 0.13 EUR |
| 736+ | 0.097 EUR |
| NTZD3155CT1G |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 400/500mΩ
Mounting: SMD
Gate charge: 1.5/1.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 400/500mΩ
Mounting: SMD
Gate charge: 1.5/1.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3198 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 214+ | 0.33 EUR |
| 329+ | 0.22 EUR |
| 397+ | 0.18 EUR |
| 496+ | 0.14 EUR |
| 556+ | 0.13 EUR |
| NTZD3155CT2G |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3459 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 250+ | 0.29 EUR |
| 325+ | 0.22 EUR |
| 472+ | 0.15 EUR |
| 603+ | 0.12 EUR |
| NUD4001DR2G | ![]() |
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Hersteller: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; SO8; 500mA; 28V; Ch: 1; PWM
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Output current: 0.5A
Case: SO8
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Integrated circuit features: PWM
Output voltage: 28V
Anzahl je Verpackung: 1 Stücke
Category: LED drivers
Description: IC: driver; LED driver; SO8; 500mA; 28V; Ch: 1; PWM
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Output current: 0.5A
Case: SO8
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Integrated circuit features: PWM
Output voltage: 28V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1990 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 1.73 EUR |
| 77+ | 0.94 EUR |
| 89+ | 0.81 EUR |
| 99+ | 0.73 EUR |
| 109+ | 0.66 EUR |
| 250+ | 0.63 EUR |
| NUF2042XV6T1G |
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Hersteller: ONSEMI
Category: Filters - integrated circuits
Description: Filter: digital; line terminator; lowpass,EMI; SOT563; Ch: 2
Type of filter: digital
Kind of integrated circuit: line terminator
Kind of filter: EMI; lowpass
Case: SOT563
Mounting: SMD
Number of channels: 2
Application: USB port ESD protection
Anzahl je Verpackung: 1 Stücke
Category: Filters - integrated circuits
Description: Filter: digital; line terminator; lowpass,EMI; SOT563; Ch: 2
Type of filter: digital
Kind of integrated circuit: line terminator
Kind of filter: EMI; lowpass
Case: SOT563
Mounting: SMD
Number of channels: 2
Application: USB port ESD protection
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 17.88 EUR |
| 5+ | 14.3 EUR |
| 10+ | 7.15 EUR |
| 50+ | 1.43 EUR |
| 250+ | 0.32 EUR |
| NUF2101MT1G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; TSOP6; Ch: 3; reel,tape
Kind of package: reel; tape
Case: TSOP6
Type of diode: TVS array
Mounting: SMD
Number of channels: 3
Application: USB
Semiconductor structure: bidirectional
Anzahl je Verpackung: 1 Stücke
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; TSOP6; Ch: 3; reel,tape
Kind of package: reel; tape
Case: TSOP6
Type of diode: TVS array
Mounting: SMD
Number of channels: 3
Application: USB
Semiconductor structure: bidirectional
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2180 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 164+ | 0.44 EUR |
| 180+ | 0.4 EUR |
| 194+ | 0.37 EUR |
| 209+ | 0.34 EUR |
| 250+ | 0.32 EUR |
| NUP1301ML3T1G |
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Hersteller: ONSEMI
NUP1301ML3T1G Protection diodes - arrays
NUP1301ML3T1G Protection diodes - arrays
auf Bestellung 2740 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 203+ | 0.35 EUR |
| 658+ | 0.11 EUR |
| 695+ | 0.1 EUR |
| NUP2105LT1G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 2
Kind of package: reel; tape
Application: CAN
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 2
Kind of package: reel; tape
Application: CAN
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6048 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 447+ | 0.16 EUR |
| 534+ | 0.13 EUR |
| 577+ | 0.12 EUR |
| 694+ | 0.1 EUR |
| 1000+ | 0.095 EUR |
| 1500+ | 0.091 EUR |
| NUP2114UPXV5T1G |
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Hersteller: ONSEMI
NUP2114UPXV5T1G Protection diodes - arrays
NUP2114UPXV5T1G Protection diodes - arrays
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 424+ | 0.17 EUR |
| 451+ | 0.16 EUR |
| NUP2201MR6T1G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 25A; 500W; unidirectional; TSOP6; Ch: 2; ESD
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Leakage current: 5µA
Number of channels: 2
Max. forward impulse current: 25A
Breakdown voltage: 6V
Peak pulse power dissipation: 0.5kW
Case: TSOP6
Application: universal
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 25A; 500W; unidirectional; TSOP6; Ch: 2; ESD
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Leakage current: 5µA
Number of channels: 2
Max. forward impulse current: 25A
Breakdown voltage: 6V
Peak pulse power dissipation: 0.5kW
Case: TSOP6
Application: universal
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5369 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 0.72 EUR |
| 141+ | 0.51 EUR |
| 167+ | 0.43 EUR |
| 182+ | 0.39 EUR |
| 203+ | 0.35 EUR |
| 500+ | 0.29 EUR |
| NUP2301MW6T1G |
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Hersteller: ONSEMI
NUP2301MW6T1G Protection diodes - arrays
NUP2301MW6T1G Protection diodes - arrays
auf Bestellung 2668 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 146+ | 0.49 EUR |
| 272+ | 0.26 EUR |
| 288+ | 0.25 EUR |
| 1000+ | 0.24 EUR |
| NUP4114HMR6T1G |
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Hersteller: ONSEMI
NUP4114HMR6T1G Protection diodes - arrays
NUP4114HMR6T1G Protection diodes - arrays
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 142+ | 0.51 EUR |
| 252+ | 0.28 EUR |
| 266+ | 0.27 EUR |
| NUP4114UCLW1T2G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; unidirectional; SC88; Ch: 4; reel,tape
Case: SC88
Version: ESD
Application: universal
Mounting: SMD
Type of diode: TVS array
Semiconductor structure: unidirectional
Leakage current: 1µA
Number of channels: 4
Max. off-state voltage: 5.5V
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; unidirectional; SC88; Ch: 4; reel,tape
Case: SC88
Version: ESD
Application: universal
Mounting: SMD
Type of diode: TVS array
Semiconductor structure: unidirectional
Leakage current: 1µA
Number of channels: 4
Max. off-state voltage: 5.5V
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1478 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 214+ | 0.33 EUR |
| 240+ | 0.3 EUR |
| 319+ | 0.22 EUR |
| 360+ | 0.2 EUR |
| 432+ | 0.17 EUR |
| 500+ | 0.14 EUR |
| NUP4114UCW1T2G |
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Hersteller: ONSEMI
NUP4114UCW1T2G Protection diodes - arrays
NUP4114UCW1T2G Protection diodes - arrays
auf Bestellung 2603 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 161+ | 0.45 EUR |
| 472+ | 0.15 EUR |
| 500+ | 0.14 EUR |
| NUP4301MR6T1G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: diode arrays; SC74; Ch: 4; reel,tape; ESD
Type of diode: diode arrays
Mounting: SMD
Case: SC74
Number of channels: 4
Kind of package: reel; tape
Version: ESD
Max. off-state voltage: 70V
Anzahl je Verpackung: 1 Stücke
Category: Protection diodes - arrays
Description: Diode: diode arrays; SC74; Ch: 4; reel,tape; ESD
Type of diode: diode arrays
Mounting: SMD
Case: SC74
Number of channels: 4
Kind of package: reel; tape
Version: ESD
Max. off-state voltage: 70V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2750 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 228+ | 0.31 EUR |
| 261+ | 0.27 EUR |
| 304+ | 0.24 EUR |
| 397+ | 0.18 EUR |
| 603+ | 0.12 EUR |
| 658+ | 0.11 EUR |
| NVD5C688NLT4G |
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Hersteller: ONSEMI
NVD5C688NLT4G SMD N channel transistors
NVD5C688NLT4G SMD N channel transistors
auf Bestellung 1712 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 55+ | 1.32 EUR |
| 58+ | 1.24 EUR |
| 60+ | 1.2 EUR |
| NVF2955T1G |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223
Kind of package: reel; tape
Case: SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -2.6A
Gate charge: 14.3nC
On-state resistance: 154mΩ
Power dissipation: 2.3W
Gate-source voltage: ±20V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223
Kind of package: reel; tape
Case: SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -2.6A
Gate charge: 14.3nC
On-state resistance: 154mΩ
Power dissipation: 2.3W
Gate-source voltage: ±20V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 710 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 62+ | 1.16 EUR |
| 82+ | 0.87 EUR |
| NVJD5121NT1G |
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Hersteller: ONSEMI
NVJD5121NT1G Multi channel transistors
NVJD5121NT1G Multi channel transistors
auf Bestellung 3050 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 210+ | 0.34 EUR |
| 642+ | 0.11 EUR |
| NVMFS6H800NLT1G |
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Hersteller: ONSEMI
NVMFS6H800NLT1G SMD N channel transistors
NVMFS6H800NLT1G SMD N channel transistors
auf Bestellung 1490 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.36 EUR |
| 18+ | 4 EUR |
| 19+ | 3.78 EUR |
| NVR4501NT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2341 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 90+ | 0.8 EUR |
| 146+ | 0.49 EUR |
| 224+ | 0.32 EUR |
| 261+ | 0.27 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.22 EUR |
| 3000+ | 0.21 EUR |
| NVR5124PLT1G |
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Hersteller: ONSEMI
NVR5124PLT1G SMD P channel transistors
NVR5124PLT1G SMD P channel transistors
auf Bestellung 1830 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 119+ | 0.6 EUR |
| 302+ | 0.24 EUR |
| 319+ | 0.22 EUR |
| NVR5198NLT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Gate charge: 5.1nC
On-state resistance: 0.205Ω
Power dissipation: 0.4W
Drain current: 1.2A
Gate-source voltage: ±20V
Pulsed drain current: 27A
Drain-source voltage: 60V
Polarisation: unipolar
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Gate charge: 5.1nC
On-state resistance: 0.205Ω
Power dissipation: 0.4W
Drain current: 1.2A
Gate-source voltage: ±20V
Pulsed drain current: 27A
Drain-source voltage: 60V
Polarisation: unipolar
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1493 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 224+ | 0.32 EUR |
| 302+ | 0.24 EUR |
| 397+ | 0.18 EUR |
| NVTFS5116PLTAG |
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Hersteller: ONSEMI
NVTFS5116PLTAG SMD P channel transistors
NVTFS5116PLTAG SMD P channel transistors
auf Bestellung 1044 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 58+ | 1.25 EUR |
| 108+ | 0.67 EUR |
| 114+ | 0.63 EUR |
| 500+ | 0.62 EUR |
| NVTJD4001NT1G |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.18A
Power dissipation: 0.272W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.18A
Power dissipation: 0.272W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2910 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 206+ | 0.35 EUR |
| 239+ | 0.3 EUR |
| 305+ | 0.23 EUR |
| 428+ | 0.17 EUR |
| 532+ | 0.13 EUR |
| NVTR4503NT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.5A
Power dissipation: 0.73W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.5A
Power dissipation: 0.73W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 112 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 112+ | 0.64 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.1 EUR |
| NZT560A |
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Hersteller: ONSEMI
NZT560A NPN SMD transistors
NZT560A NPN SMD transistors
auf Bestellung 3345 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 89+ | 0.81 EUR |
| 209+ | 0.34 EUR |
| 222+ | 0.32 EUR |
| NZT605 |
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Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 110V; 1.5A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 110V
Collector current: 1.5A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 110V; 1.5A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 110V
Collector current: 1.5A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 493 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 91+ | 0.79 EUR |
| 125+ | 0.58 EUR |
| 205+ | 0.35 EUR |
| 250+ | 0.29 EUR |
| 500+ | 0.26 EUR |
| NZT7053 |
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Hersteller: ONSEMI
NZT7053 NPN SMD Darlington transistors
NZT7053 NPN SMD Darlington transistors
auf Bestellung 3957 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 0.72 EUR |
| 278+ | 0.26 EUR |
| 295+ | 0.24 EUR |
| 4000+ | 0.23 EUR |
| PACDN042Y3R |
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Hersteller: ONSEMI
PACDN042Y3R Protection diodes - arrays
PACDN042Y3R Protection diodes - arrays
auf Bestellung 2042 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 164+ | 0.44 EUR |
| 705+ | 0.1 EUR |
| 736+ | 0.097 EUR |
| 9000+ | 0.094 EUR |
| PCA9306DTR2G |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Case: TSSOP8
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 1...3.6V DC
Number of outputs: 2
Number of inputs: 2
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Anzahl je Verpackung: 1 Stücke
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Case: TSSOP8
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 1...3.6V DC
Number of outputs: 2
Number of inputs: 2
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1683 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 84+ | 0.86 EUR |
| 87+ | 0.82 EUR |
| 100+ | 0.74 EUR |
| 250+ | 0.7 EUR |
| PCA9306USG |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Case: US8
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 1...3.6V DC
Number of outputs: 2
Number of inputs: 2
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Anzahl je Verpackung: 1 Stücke
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Case: US8
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 1...3.6V DC
Number of outputs: 2
Number of inputs: 2
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.3 EUR |
| 25+ | 2.86 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.67 EUR |
| PN2222ABU |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
Anzahl je Verpackung: 1 Stücke
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5563 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 291+ | 0.25 EUR |
| 343+ | 0.21 EUR |
| 684+ | 0.1 EUR |
| 993+ | 0.072 EUR |
| 1013+ | 0.071 EUR |
| PN2222ATA |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Anzahl je Verpackung: 1 Stücke
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 808 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 625+ | 0.11 EUR |
| 772+ | 0.093 EUR |
| 808+ | 0.089 EUR |
| 1000+ | 0.072 EUR |
| 2000+ | 0.064 EUR |
| PN2222ATF |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 1 Stücke
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 549 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 313+ | 0.23 EUR |
| 549+ | 0.13 EUR |
| 1000+ | 0.074 EUR |
| 2000+ | 0.066 EUR |
| PN2907ATFR |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1904 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 385+ | 0.19 EUR |
| 820+ | 0.087 EUR |
| 935+ | 0.077 EUR |
| 1034+ | 0.069 EUR |
| 2000+ | 0.061 EUR |
| 4000+ | 0.058 EUR |
| PZT2222AT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4316 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 182+ | 0.39 EUR |
| 248+ | 0.29 EUR |
| 281+ | 0.25 EUR |
| 329+ | 0.22 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.18 EUR |
| PZT2907AT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 891 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| 165+ | 0.43 EUR |
| 226+ | 0.32 EUR |
| 258+ | 0.28 EUR |
| 307+ | 0.23 EUR |
| 500+ | 0.21 EUR |
| PZT3904T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; SOT223-4,TO261-4
Kind of package: reel; tape
Type of transistor: NPN
Case: SOT223-4; TO261-4
Collector current: 0.2A
Power dissipation: 1.5W
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 300MHz
Polarisation: bipolar
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; SOT223-4,TO261-4
Kind of package: reel; tape
Type of transistor: NPN
Case: SOT223-4; TO261-4
Collector current: 0.2A
Power dissipation: 1.5W
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 300MHz
Polarisation: bipolar
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 603 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 199+ | 0.36 EUR |
| 278+ | 0.26 EUR |
| 319+ | 0.22 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.15 EUR |
| PZTA06 |
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Hersteller: ONSEMI
PZTA06 NPN SMD transistors
PZTA06 NPN SMD transistors
auf Bestellung 3332 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 119+ | 0.6 EUR |
| 171+ | 0.42 EUR |
| 180+ | 0.4 EUR |
| PZTA42T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 497 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 239+ | 0.3 EUR |
| 317+ | 0.23 EUR |
| 358+ | 0.2 EUR |
| 414+ | 0.17 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.14 EUR |

















