Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
AR0234CSSM28SUKA0-CR1 | onsemi |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
![]() |
AR0234CSSM00SUKA0-CP1 | onsemi |
![]() Packaging: Tray Package / Case: 83-VFBGA, CSPBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: 83-ODCSP (5.6x10) Frames per Second: 120.0 |
auf Bestellung 141 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
AR0234CSSC28SUKA0-CR1 | onsemi |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
AR0234CSSC28SUKA0-CP1 | onsemi |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
AR0234CSSM28SUKA0-CP1 | onsemi |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
AR0234CSSM00SUKA0-CR1 | onsemi |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
![]() |
2SK3796-2-TL-E | onsemi |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V Current Drain (Id) - Max: 10 mA Supplier Device Package: SMCP Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V Power - Max: 100 mW Resistance - RDS(On): 200 Ohms Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 600 µA @ 10 V |
auf Bestellung 320500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
NVTYS008N06CLTWG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 63A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 9A, 10V Power Dissipation (Max): 3.2W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 50µA Supplier Device Package: 8-LFPAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
NCP1623ASNT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 30V Frequency - Switching: 28kHz Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM) Supplier Device Package: 6-TSOP Current - Startup: 20 µA |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
2SD1830 | onsemi |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 8mA, 4A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 4A, 3V Frequency - Transition: 20MHz Supplier Device Package: TO-220ML Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
2SD1826 | onsemi |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
NB7NPQ702MMUTXG | onsemi |
![]() |
auf Bestellung 48139 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
NB7VPQ702MMUTXG | onsemi |
Description: IC REDRIVER USB 3.1 DUAL 16UQFN Packaging: Tape & Reel (TR) Package / Case: 16-UFQFN Exposed Pad Delay Time: 150ps Number of Channels: 2 Mounting Type: Surface Mount Output: CML Type: Buffer, ReDriver Input: CML Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 1.89V Applications: USB Data Rate (Max): 10Gbps Supplier Device Package: 16-UQFN (3x3) Signal Conditioning: Input Equalization, Output De-Emphasis Capacitance - Input: 1.25 pF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
NB7VPQ702MMUTXG | onsemi |
Description: IC REDRIVER USB 3.1 DUAL 16UQFN Packaging: Cut Tape (CT) Package / Case: 16-UFQFN Exposed Pad Delay Time: 150ps Number of Channels: 2 Mounting Type: Surface Mount Output: CML Type: Buffer, ReDriver Input: CML Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 1.89V Applications: USB Data Rate (Max): 10Gbps Supplier Device Package: 16-UQFN (3x3) Signal Conditioning: Input Equalization, Output De-Emphasis Capacitance - Input: 1.25 pF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
NB7VPQ702MMUTXG | onsemi |
Description: IC REDRIVER USB 3.1 DUAL 16UQFN Packaging: Bulk Package / Case: 16-UFQFN Exposed Pad Delay Time: 150ps Number of Channels: 2 Mounting Type: Surface Mount Output: CML Type: Buffer, ReDriver Input: CML Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 1.89V Applications: USB Data Rate (Max): 10Gbps Supplier Device Package: 16-UQFN (3x3) Signal Conditioning: Input Equalization, Output De-Emphasis Capacitance - Input: 1.25 pF |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
NB7NPQ7021MMUTXG | onsemi |
Description: DUAL CHANNEL USB 3.0/3.1 Packaging: Tape & Reel (TR) Package / Case: 16-UFQFN Exposed Pad Delay Time: 110ps Number of Channels: 2 Mounting Type: Surface Mount Output: Differential Type: Buffer, ReDriver Input: Differential Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.465V Applications: USB Current - Supply: 130mA Data Rate (Max): 10Gbps Supplier Device Package: 16-UQFN (3x3) Signal Conditioning: Input Equalization, Output De-Emphasis Capacitance - Input: 1.25 pF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
![]() |
MC10141P | onsemi |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
SURA8105T3G-VF01 | onsemi |
![]() Packaging: Bulk Part Status: Active |
auf Bestellung 2750 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
![]() |
SJD32CT4G-VF01 | onsemi |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V Frequency - Transition: 3MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 15 W |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
NVD6416ANLT4G-001-VF01 | onsemi |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: DPAK-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
SBRS8130LT3G-VF01 | onsemi |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
SBRS8130LT3G-VF01 | onsemi |
![]() |
auf Bestellung 70000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
SBRS8130LT3G-VF01 | onsemi |
![]() |
auf Bestellung 70000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
NCP59763AMN080TBG | onsemi |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
NCP59763AMN080TBG | onsemi |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
AR1630CSSC34SMD10 | onsemi |
Description: AR1630CSSC34SMD10 Packaging: Bulk Package / Case: Die Type: CMOS Active Pixel Array: 4632H x 3492V Supplier Device Package: Die Part Status: Obsolete Frames per Second: 30 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
![]() |
FDP2D9N12C | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 210A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V Power Dissipation (Max): 2.4W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 686µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8894 pF @ 60 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
SMBZ1460LT1G | onsemi | Description: DIODE ZENER .225W SPCL SOT23 |
auf Bestellung 132000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
LA4160-E | onsemi |
Description: AUDIO SYSTEM AMPLIFIER Packaging: Bulk Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Type: Amplifier Supplier Device Package: 14-DIP Part Status: Active |
auf Bestellung 18756 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
P1708CF-08TR | onsemi |
Description: IC SS CLOCK GENERATOR 8TSSOP Packaging: Bulk Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: CMOS, TTL Frequency - Max: 110MHz Type: Spread Spectrum Clock Generator Input: CMOS, TTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 3.7V Ratio - Input:Output: 1:1 Differential - Input:Output: No/No Supplier Device Package: 8-TSSOP PLL: Yes Divider/Multiplier: Yes/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
SBT250-04L | onsemi |
![]() Packaging: Tray Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 25A Supplier Device Package: TO-3PB Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A Current - Reverse Leakage @ Vr: 300 µA @ 20 V |
auf Bestellung 221 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
SCD33269T-5.0G | onsemi |
Description: IC REG LINEAR LDO 800MA 5V TO220 Packaging: Bulk Part Status: Obsolete |
auf Bestellung 950 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
![]() |
ESD5B5.0ST5G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 32pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOD-523 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Power - Peak Pulse: 50W Power Line Protection: No Part Status: Active |
auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
ESD5B5.0ST5G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 32pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOD-523 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Power - Peak Pulse: 50W Power Line Protection: No Part Status: Active |
auf Bestellung 70361 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
NRVS3AB | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
NRVS1JHE | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 782 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323HE Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
NRVRGF1K | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
NRVS1GHE | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 782 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323HE Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
NRVRGF1J | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
NRVRGF1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
NRVRGF1A | onsemi |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
![]() |
NLAS5157MUTCG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 500mOhm -3db Bandwidth: 36MHz Supplier Device Package: 6-UDFN (1.45x1) Voltage - Supply, Single (V+): 1.65V ~ 4.5V Charge Injection: 38pC Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 80mOhm Switch Time (Ton, Toff) (Max): 40ns, 25ns Channel Capacitance (CS(off), CD(off)): 47pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
EC4304C-TL | onsemi | Description: PCH 1.5V DRIVE SERIES |
auf Bestellung 140000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
NL27WZ16MU2TCG | onsemi |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
NL27WZ16MU3TCG | onsemi |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
![]() |
SVC389-TL-E | onsemi |
![]() Packaging: Bulk Package / Case: SC-96 Mounting Type: Surface Mount Diode Type: 1 Pair Common Cathode Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 24pF @ 8V, 1MHz Q @ Vr, F: 200 @ 1V, 1MHz Capacitance Ratio Condition: C1/C8 Supplier Device Package: 3-CPH Voltage - Peak Reverse (Max): 16 V Capacitance Ratio: 19.5 |
auf Bestellung 109130 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
USB1T11AM | onsemi |
![]() |
auf Bestellung 591 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
USB1T11AM | onsemi |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
SVC710-TL-E | onsemi |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
SVC710-TL-E | onsemi |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
SVC710-TL-E | onsemi |
![]() |
auf Bestellung 78000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
FDP075N15A-F032 | onsemi |
Description: MOSFET N-CH 150V 130A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 75 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
NTTFS115P10M5 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 13A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.4A, 10V Power Dissipation (Max): 900mW (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 4V @ 45µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 50 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
NCP156BBFCT120180T2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA, 250mA Operating Temperature: 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 130 µA Voltage - Input (Max): 5.5V Number of Regulators: 2 Supplier Device Package: 6-WLCSP (1.2x0.8) Voltage - Output (Min/Fixed): 1.2V, 1.8V Control Features: Current Limit, Enable PSRR: 70dB ~ 92dB (1kHz) Voltage Dropout (Max): 0.15V @ 500mA Protection Features: Over Current, Over Temperature |
auf Bestellung 145000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
NVMYS6D2N06CLTWG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 2V @ 53µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
MTB52N06VL | onsemi |
![]() Packaging: Bulk |
auf Bestellung 1296 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
NTB22N06 | onsemi |
![]() Packaging: Bulk |
auf Bestellung 2729 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
NTD32N06-1G | onsemi |
![]() Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 16A, 10V Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V |
auf Bestellung 3175 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
CAT25256VE-GT3 | onsemi |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
NSVMUN5332DW1T3G | onsemi | Description: COMPLEMENTARY BIPOLAR DIGITAL TR |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
|
AR0234CSSM28SUKA0-CR1 |
![]() |
Hersteller: onsemi
Description: 2MP 1/3 CIS SO
Description: 2MP 1/3 CIS SO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AR0234CSSM00SUKA0-CP1 |
![]() |
Hersteller: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
auf Bestellung 141 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 62.67 EUR |
5+ | 56.39 EUR |
10+ | 54.14 EUR |
25+ | 51.52 EUR |
40+ | 50.32 EUR |
AR0234CSSC28SUKA0-CR1 |
![]() |
Hersteller: onsemi
Description: 2MP 1/3 CIS SO
Description: 2MP 1/3 CIS SO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AR0234CSSC28SUKA0-CP1 |
![]() |
Hersteller: onsemi
Description: 2MP 1/3 CIS SO
Description: 2MP 1/3 CIS SO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AR0234CSSM28SUKA0-CP1 |
![]() |
Hersteller: onsemi
Description: 2MP 1/3 CIS SO
Description: 2MP 1/3 CIS SO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AR0234CSSM00SUKA0-CR1 |
![]() |
Hersteller: onsemi
Description: 2MP 1/3 CIS SO
Description: 2MP 1/3 CIS SO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SK3796-2-TL-E |
![]() |
Hersteller: onsemi
Description: JFET N-CH 10MA SMCP
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SMCP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 100 mW
Resistance - RDS(On): 200 Ohms
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 600 µA @ 10 V
Description: JFET N-CH 10MA SMCP
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SMCP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 100 mW
Resistance - RDS(On): 200 Ohms
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 600 µA @ 10 V
auf Bestellung 320500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2664+ | 0.18 EUR |
NVTYS008N06CLTWG |
![]() |
Hersteller: onsemi
Description: T6 60V N-CH LL IN LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 9A, 10V
Power Dissipation (Max): 3.2W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 25 V
Qualification: AEC-Q101
Description: T6 60V N-CH LL IN LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 9A, 10V
Power Dissipation (Max): 3.2W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP1623ASNT1G |
![]() |
Hersteller: onsemi
Description: ENHANCED HIGH EFFICIENCY POWER F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 30V
Frequency - Switching: 28kHz
Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM)
Supplier Device Package: 6-TSOP
Current - Startup: 20 µA
Description: ENHANCED HIGH EFFICIENCY POWER F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 30V
Frequency - Switching: 28kHz
Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM)
Supplier Device Package: 6-TSOP
Current - Startup: 20 µA
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.55 EUR |
6000+ | 0.53 EUR |
2SD1830 |
![]() |
Hersteller: onsemi
Description: TRANS NPN 100V 8A TO-220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 8mA, 4A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 4A, 3V
Frequency - Transition: 20MHz
Supplier Device Package: TO-220ML
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Description: TRANS NPN 100V 8A TO-220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 8mA, 4A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 4A, 3V
Frequency - Transition: 20MHz
Supplier Device Package: TO-220ML
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
437+ | 1.07 EUR |
2SD1826 |
![]() |
Hersteller: onsemi
Description: POWER BIPOLAR TRANSISTOR NPN
Description: POWER BIPOLAR TRANSISTOR NPN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NB7NPQ702MMUTXG |
![]() |
Hersteller: onsemi
Description: NB7NPQ702M - USB 3.1 DUAL CHANNE
Description: NB7NPQ702M - USB 3.1 DUAL CHANNE
auf Bestellung 48139 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
237+ | 2.19 EUR |
NB7VPQ702MMUTXG |
Hersteller: onsemi
Description: IC REDRIVER USB 3.1 DUAL 16UQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN Exposed Pad
Delay Time: 150ps
Number of Channels: 2
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 1.89V
Applications: USB
Data Rate (Max): 10Gbps
Supplier Device Package: 16-UQFN (3x3)
Signal Conditioning: Input Equalization, Output De-Emphasis
Capacitance - Input: 1.25 pF
Description: IC REDRIVER USB 3.1 DUAL 16UQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN Exposed Pad
Delay Time: 150ps
Number of Channels: 2
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 1.89V
Applications: USB
Data Rate (Max): 10Gbps
Supplier Device Package: 16-UQFN (3x3)
Signal Conditioning: Input Equalization, Output De-Emphasis
Capacitance - Input: 1.25 pF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NB7VPQ702MMUTXG |
Hersteller: onsemi
Description: IC REDRIVER USB 3.1 DUAL 16UQFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN Exposed Pad
Delay Time: 150ps
Number of Channels: 2
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 1.89V
Applications: USB
Data Rate (Max): 10Gbps
Supplier Device Package: 16-UQFN (3x3)
Signal Conditioning: Input Equalization, Output De-Emphasis
Capacitance - Input: 1.25 pF
Description: IC REDRIVER USB 3.1 DUAL 16UQFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN Exposed Pad
Delay Time: 150ps
Number of Channels: 2
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 1.89V
Applications: USB
Data Rate (Max): 10Gbps
Supplier Device Package: 16-UQFN (3x3)
Signal Conditioning: Input Equalization, Output De-Emphasis
Capacitance - Input: 1.25 pF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NB7VPQ702MMUTXG |
Hersteller: onsemi
Description: IC REDRIVER USB 3.1 DUAL 16UQFN
Packaging: Bulk
Package / Case: 16-UFQFN Exposed Pad
Delay Time: 150ps
Number of Channels: 2
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 1.89V
Applications: USB
Data Rate (Max): 10Gbps
Supplier Device Package: 16-UQFN (3x3)
Signal Conditioning: Input Equalization, Output De-Emphasis
Capacitance - Input: 1.25 pF
Description: IC REDRIVER USB 3.1 DUAL 16UQFN
Packaging: Bulk
Package / Case: 16-UFQFN Exposed Pad
Delay Time: 150ps
Number of Channels: 2
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 1.89V
Applications: USB
Data Rate (Max): 10Gbps
Supplier Device Package: 16-UQFN (3x3)
Signal Conditioning: Input Equalization, Output De-Emphasis
Capacitance - Input: 1.25 pF
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
180+ | 2.71 EUR |
NB7NPQ7021MMUTXG |
Hersteller: onsemi
Description: DUAL CHANNEL USB 3.0/3.1
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN Exposed Pad
Delay Time: 110ps
Number of Channels: 2
Mounting Type: Surface Mount
Output: Differential
Type: Buffer, ReDriver
Input: Differential
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Applications: USB
Current - Supply: 130mA
Data Rate (Max): 10Gbps
Supplier Device Package: 16-UQFN (3x3)
Signal Conditioning: Input Equalization, Output De-Emphasis
Capacitance - Input: 1.25 pF
Description: DUAL CHANNEL USB 3.0/3.1
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN Exposed Pad
Delay Time: 110ps
Number of Channels: 2
Mounting Type: Surface Mount
Output: Differential
Type: Buffer, ReDriver
Input: Differential
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Applications: USB
Current - Supply: 130mA
Data Rate (Max): 10Gbps
Supplier Device Package: 16-UQFN (3x3)
Signal Conditioning: Input Equalization, Output De-Emphasis
Capacitance - Input: 1.25 pF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC10141P |
![]() |
Hersteller: onsemi
Description: PARALLEL IN PARALLEL OUT
Description: PARALLEL IN PARALLEL OUT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SURA8105T3G-VF01 |
![]() |
auf Bestellung 2750 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1158+ | 0.44 EUR |
SJD32CT4G-VF01 |
![]() |
Hersteller: onsemi
Description: TRANS PNP 100V 3A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 15 W
Description: TRANS PNP 100V 3A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 15 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1199+ | 0.42 EUR |
NVD6416ANLT4G-001-VF01 |
![]() |
Hersteller: onsemi
Description: NVD6416 - N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DPAK-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Description: NVD6416 - N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DPAK-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBRS8130LT3G-VF01 |
![]() |
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 1A SMB
Description: DIODE SCHOTTKY 30V 1A SMB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBRS8130LT3G-VF01 |
![]() |
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 1A SMB
Description: DIODE SCHOTTKY 30V 1A SMB
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
552+ | 0.79 EUR |
SBRS8130LT3G-VF01 |
![]() |
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 1A SMB
Description: DIODE SCHOTTKY 30V 1A SMB
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
NCP59763AMN080TBG |
![]() |
Hersteller: onsemi
Description: LINEAR VOLTAGE REGULATOR (LDO),
Description: LINEAR VOLTAGE REGULATOR (LDO),
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP59763AMN080TBG |
![]() |
Hersteller: onsemi
Description: LINEAR VOLTAGE REGULATOR (LDO),
Description: LINEAR VOLTAGE REGULATOR (LDO),
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AR1630CSSC34SMD10 |
Hersteller: onsemi
Description: AR1630CSSC34SMD10
Packaging: Bulk
Package / Case: Die
Type: CMOS
Active Pixel Array: 4632H x 3492V
Supplier Device Package: Die
Part Status: Obsolete
Frames per Second: 30
Description: AR1630CSSC34SMD10
Packaging: Bulk
Package / Case: Die
Type: CMOS
Active Pixel Array: 4632H x 3492V
Supplier Device Package: Die
Part Status: Obsolete
Frames per Second: 30
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDP2D9N12C |
![]() |
Hersteller: onsemi
Description: PTNG 120V N-FET TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 210A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 2.4W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 686µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8894 pF @ 60 V
Description: PTNG 120V N-FET TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 210A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 2.4W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 686µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8894 pF @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMBZ1460LT1G |
Hersteller: onsemi
Description: DIODE ZENER .225W SPCL SOT23
Description: DIODE ZENER .225W SPCL SOT23
auf Bestellung 132000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
15000+ | 0.035 EUR |
LA4160-E |
Hersteller: onsemi
Description: AUDIO SYSTEM AMPLIFIER
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Amplifier
Supplier Device Package: 14-DIP
Part Status: Active
Description: AUDIO SYSTEM AMPLIFIER
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Amplifier
Supplier Device Package: 14-DIP
Part Status: Active
auf Bestellung 18756 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
807+ | 0.61 EUR |
P1708CF-08TR |
Hersteller: onsemi
Description: IC SS CLOCK GENERATOR 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS, TTL
Frequency - Max: 110MHz
Type: Spread Spectrum Clock Generator
Input: CMOS, TTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.7V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC SS CLOCK GENERATOR 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS, TTL
Frequency - Max: 110MHz
Type: Spread Spectrum Clock Generator
Input: CMOS, TTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.7V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
221+ | 2.1 EUR |
SBT250-04L |
![]() |
Hersteller: onsemi
Description: DIODE ARRAY SCHOT 40V 25A TO-3PB
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-3PB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 20 V
Description: DIODE ARRAY SCHOT 40V 25A TO-3PB
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-3PB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 20 V
auf Bestellung 221 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
119+ | 4.25 EUR |
SCD33269T-5.0G |
auf Bestellung 950 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
698+ | 0.7 EUR |
ESD5B5.0ST5G |
![]() |
Hersteller: onsemi
Description: TVS DIODE 5VWM SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-523
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power - Peak Pulse: 50W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-523
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power - Peak Pulse: 50W
Power Line Protection: No
Part Status: Active
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8000+ | 0.065 EUR |
16000+ | 0.062 EUR |
24000+ | 0.059 EUR |
40000+ | 0.056 EUR |
ESD5B5.0ST5G |
![]() |
Hersteller: onsemi
Description: TVS DIODE 5VWM SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-523
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power - Peak Pulse: 50W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-523
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power - Peak Pulse: 50W
Power Line Protection: No
Part Status: Active
auf Bestellung 70361 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
44+ | 0.4 EUR |
70+ | 0.25 EUR |
152+ | 0.12 EUR |
500+ | 0.1 EUR |
1000+ | 0.087 EUR |
2000+ | 0.086 EUR |
NRVS3AB |
![]() |
Hersteller: onsemi
Description: DIODE STANDARD 50V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
Description: DIODE STANDARD 50V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NRVS1JHE |
![]() |
Hersteller: onsemi
Description: DIODE GEN PURP 600V 1A SOD323HE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 782 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 1A SOD323HE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 782 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.2 EUR |
NRVRGF1K |
![]() |
Hersteller: onsemi
Description: DIODE STANDARD 800V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 800V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NRVS1GHE |
![]() |
Hersteller: onsemi
Description: DIODE GEN PURP 400V 1A SOD323HE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 782 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 400V 1A SOD323HE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 782 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.22 EUR |
NRVRGF1J |
![]() |
Hersteller: onsemi
Description: DIODE GEN PURP 600V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NRVRGF1G |
![]() |
Hersteller: onsemi
Description: DIODE GEN PURP 400V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 400V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NRVRGF1A |
![]() |
Hersteller: onsemi
Description: SR SMA GPPN 1A 50V
Description: SR SMA GPPN 1A 50V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NLAS5157MUTCG |
![]() |
Hersteller: onsemi
Description: IC SWITCH SPDT X 1 500MOHM 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 500mOhm
-3db Bandwidth: 36MHz
Supplier Device Package: 6-UDFN (1.45x1)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Charge Injection: 38pC
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 40ns, 25ns
Channel Capacitance (CS(off), CD(off)): 47pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 500MOHM 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 500mOhm
-3db Bandwidth: 36MHz
Supplier Device Package: 6-UDFN (1.45x1)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Charge Injection: 38pC
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 40ns, 25ns
Channel Capacitance (CS(off), CD(off)): 47pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
EC4304C-TL |
Hersteller: onsemi
Description: PCH 1.5V DRIVE SERIES
Description: PCH 1.5V DRIVE SERIES
auf Bestellung 140000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2219+ | 0.24 EUR |
NL27WZ16MU2TCG |
![]() |
Hersteller: onsemi
Description: DUAL BUFFER
Description: DUAL BUFFER
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NL27WZ16MU3TCG |
![]() |
Hersteller: onsemi
Description: DUAL BUFFER
Description: DUAL BUFFER
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SVC389-TL-E |
![]() |
Hersteller: onsemi
Description: VARACTOR DIODE AM
Packaging: Bulk
Package / Case: SC-96
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 24pF @ 8V, 1MHz
Q @ Vr, F: 200 @ 1V, 1MHz
Capacitance Ratio Condition: C1/C8
Supplier Device Package: 3-CPH
Voltage - Peak Reverse (Max): 16 V
Capacitance Ratio: 19.5
Description: VARACTOR DIODE AM
Packaging: Bulk
Package / Case: SC-96
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 24pF @ 8V, 1MHz
Q @ Vr, F: 200 @ 1V, 1MHz
Capacitance Ratio Condition: C1/C8
Supplier Device Package: 3-CPH
Voltage - Peak Reverse (Max): 16 V
Capacitance Ratio: 19.5
auf Bestellung 109130 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
429+ | 1.14 EUR |
USB1T11AM |
![]() |
Hersteller: onsemi
Description: IC TRANSCEIVER HALF 1/1 14SOIC
Description: IC TRANSCEIVER HALF 1/1 14SOIC
auf Bestellung 591 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
591+ | 0.93 EUR |
USB1T11AM |
![]() |
Hersteller: onsemi
Description: IC TRANSCEIVER HALF 1/1 14SOIC
Description: IC TRANSCEIVER HALF 1/1 14SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SVC710-TL-E |
![]() |
Hersteller: onsemi
Description: DIODE FM VARICAP SGL VR 4V MCPH3
Description: DIODE FM VARICAP SGL VR 4V MCPH3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SVC710-TL-E |
![]() |
Hersteller: onsemi
Description: DIODE FM VARICAP SGL VR 4V MCPH3
Description: DIODE FM VARICAP SGL VR 4V MCPH3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SVC710-TL-E |
![]() |
Hersteller: onsemi
Description: DIODE FM VARICAP SGL VR 4V MCPH3
Description: DIODE FM VARICAP SGL VR 4V MCPH3
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2404+ | 0.22 EUR |
FDP075N15A-F032 |
Hersteller: onsemi
Description: MOSFET N-CH 150V 130A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 75 V
Description: MOSFET N-CH 150V 130A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTTFS115P10M5 |
![]() |
Hersteller: onsemi
Description: MV5_100V_N_P_IN DUALS AND SINGLE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.4A, 10V
Power Dissipation (Max): 900mW (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 50 V
Description: MV5_100V_N_P_IN DUALS AND SINGLE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.4A, 10V
Power Dissipation (Max): 900mW (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.6 EUR |
NCP156BBFCT120180T2G |
![]() |
Hersteller: onsemi
Description: IC REG LINEAR 1.2V/1.8V 6-WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA, 250mA
Operating Temperature: 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 130 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: 6-WLCSP (1.2x0.8)
Voltage - Output (Min/Fixed): 1.2V, 1.8V
Control Features: Current Limit, Enable
PSRR: 70dB ~ 92dB (1kHz)
Voltage Dropout (Max): 0.15V @ 500mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.2V/1.8V 6-WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA, 250mA
Operating Temperature: 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 130 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: 6-WLCSP (1.2x0.8)
Voltage - Output (Min/Fixed): 1.2V, 1.8V
Control Features: Current Limit, Enable
PSRR: 70dB ~ 92dB (1kHz)
Voltage Dropout (Max): 0.15V @ 500mA
Protection Features: Over Current, Over Temperature
auf Bestellung 145000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.32 EUR |
10000+ | 0.29 EUR |
15000+ | 0.28 EUR |
25000+ | 0.27 EUR |
NVMYS6D2N06CLTWG |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 60V 17A/71A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 53µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 17A/71A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 53µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.79 EUR |
6000+ | 0.76 EUR |
MTB52N06VL |
![]() |
auf Bestellung 1296 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
919+ | 0.54 EUR |
NTB22N06 |
![]() |
auf Bestellung 2729 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2729+ | 0.18 EUR |
NTD32N06-1G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 60V 32A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 16A, 10V
Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
Description: MOSFET N-CH 60V 32A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 16A, 10V
Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
auf Bestellung 3175 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
910+ | 0.51 EUR |
CAT25256VE-GT3 |
![]() |
Hersteller: onsemi
Description: IC EEPROM 256KB SER SPI 8SOIC
Description: IC EEPROM 256KB SER SPI 8SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NSVMUN5332DW1T3G |
Hersteller: onsemi
Description: COMPLEMENTARY BIPOLAR DIGITAL TR
Description: COMPLEMENTARY BIPOLAR DIGITAL TR
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 0.48 EUR |