| Foto | Bezeichnung | Hersteller | Beschreibung |
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NCP10671BD100R2G | onsemi |
Description: IC OFFLINE SWITCH MULT TOP 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Duty Cycle: 66% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 700V Output Isolation: Either Topology: Buck, Buck-Boost, Flyback Voltage - Supply (Vcc/Vdd): 6.7V ~ 20V Supplier Device Package: 8-SOIC Fault Protection: Current Limiting, Over Load, Over Voltage, Short Circuit Voltage - Start Up: 9 V Control Features: Soft Start Part Status: Active |
auf Bestellung 2084 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP1096PAG | onsemi |
Description: IC POE CNTRL 1 CHANNEL 16TSSOPPackaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Type: Controller (PD), DC/DC Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 0V ~ 57V Current - Supply: 336.7µA Internal Switch(s): Yes Standards: 802.3at (PoE+), 802.3af (PoE), 802.3bt Supplier Device Package: 16-TSSOP-EP Auxiliary Sense: Yes Part Status: Active Number of Channels: 1 Power - Max: 90 W |
Produkt ist nicht verfügbar |
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NCP1096PAG | onsemi |
Description: IC POE CNTRL 1 CHANNEL 16TSSOPPackaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Type: Controller (PD), DC/DC Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 0V ~ 57V Current - Supply: 336.7µA Internal Switch(s): Yes Standards: 802.3at (PoE+), 802.3af (PoE), 802.3bt Supplier Device Package: 16-TSSOP-EP Auxiliary Sense: Yes Part Status: Active Number of Channels: 1 Power - Max: 90 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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KSP2907ATF | onsemi |
Description: TRANS PNP 60V 0.6A TO-92-3Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
auf Bestellung 102000 Stücke: Lieferzeit 10-14 Tag (e) |
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KSP2907ATF | onsemi |
Description: TRANS PNP 60V 0.6A TO-92-3Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
auf Bestellung 107145 Stücke: Lieferzeit 10-14 Tag (e) |
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| CAT25020ZI-GT3 | onsemi |
Description: IC EEPROM 2KBIT SPI 8MSOPPackaging: Bulk Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Memory Format: EEPROM Supplier Device Package: 8-MSOP Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 256 x 8 DigiKey Programmable: Not Verified |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOC3073SM | onsemi |
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6SMDPackaging: Tube Package / Case: 6-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.18V Voltage - Isolation: 4170Vrms Approval Agency: UL Current - Hold (Ih): 540µA (Typ) Supplier Device Package: 6-SMD Zero Crossing Circuit: No Static dV/dt (Min): 1kV/µs Current - LED Trigger (Ift) (Max): 6mA Part Status: Active Number of Channels: 1 Voltage - Off State: 800 V Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 74111 Stücke: Lieferzeit 10-14 Tag (e) |
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7WB3306BMX1TCG | onsemi |
Description: IC BUS SWITCH 1 X 1:1 8ULLGA |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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7WB3306MUTAG | onsemi |
Description: IC BUS SWITCH 1 X 1:1 8UDFN |
auf Bestellung 59900 Stücke: Lieferzeit 10-14 Tag (e) |
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7WB3306CMX1TCG | onsemi |
Description: IC BUS SWITCH 1 X 1:1 8ULLGA |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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7WB3306AMX1TCG | onsemi |
Description: IC BUS SWITCH 1 X 1:1 8ULLGA |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NCD9812FBR2G | onsemi |
Description: IC MULTICHANNEL ADC DACS AN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCD9812FBR2G | onsemi |
Description: IC MULTICHANNEL ADC DACS AN Packaging: Bulk |
auf Bestellung 144000 Stücke: Lieferzeit 10-14 Tag (e) |
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STR-NCD98010-GEVK | onsemi |
Description: EVAL BOARD FOR NCD98010Packaging: Bulk Number of Bits: 12 Data Interface: SPI Sampling Rate (Per Second): 2M Utilized IC / Part: NCD98010 Supplied Contents: Board(s) Number of A/D Converters: 1 Contents: Board(s) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NCV3066MNTXG | onsemi |
Description: IC LED DRVR RGLTR PWM 1.5A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 150kHz Type: DC DC Regulator Operating Temperature: -40°C ~ 125°C (TJ) Applications: Lighting Current - Output / Channel: 1.5A (Switch) Internal Switch(s): Yes Topology: Step-Down (Buck), Step-Up (Boost) Supplier Device Package: 8-DFN (4x4) Dimming: Analog, PWM Voltage - Supply (Min): 3V Voltage - Supply (Max): 40V Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NCV3066MNTXG | onsemi |
Description: IC LED DRVR RGLTR PWM 1.5A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 150kHz Type: DC DC Regulator Operating Temperature: -40°C ~ 125°C (TJ) Applications: Lighting Current - Output / Channel: 1.5A (Switch) Internal Switch(s): Yes Topology: Step-Down (Buck), Step-Up (Boost) Supplier Device Package: 8-DFN (4x4) Dimming: Analog, PWM Voltage - Supply (Min): 3V Voltage - Supply (Max): 40V Part Status: Active |
auf Bestellung 3659 Stücke: Lieferzeit 10-14 Tag (e) |
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FDI045N10A | onsemi |
Description: MOSFET N-CH 100V 120A I2PAKPackaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 (I2PAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BD682S | onsemi |
Description: TRANS PNP DARL 100V 4A TO-126-3Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Supplier Device Package: TO-126-3 Part Status: Obsolete Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 14 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BD681STU | onsemi |
Description: TRANS NPN DARL 100V 4A TO-126-3Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Supplier Device Package: TO-126-3 Part Status: Obsolete Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 40 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| 1N5991BRL-ON | onsemi | Description: DIODE ZENER 4.3V 0.5W 5% UNIDIR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NLSX3012DMR2G | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 8MSOPFeatures: Auto-Direction Sensing Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 100Mbps Supplier Device Package: 8-MSOP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 0.9 V ~ 4.5 V Voltage - VCCB: 1.3 V ~ 4.5 V Number of Circuits: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NLSX3012DMR2G | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 8MSOPFeatures: Auto-Direction Sensing Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 100Mbps Supplier Device Package: 8-MSOP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 0.9 V ~ 4.5 V Voltage - VCCB: 1.3 V ~ 4.5 V Number of Circuits: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NLA9306MU3TAG | onsemi |
Description: IC XLTR VL BIDIR 8-UDFNPackaging: Tape & Reel (TR) Package / Case: 8-UFDFN Output Type: Open Drain Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) Supplier Device Package: 8-UDFN (1.45x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 0 V ~ 5.5 V Voltage - VCCB: 0 V ~ 5.5 V Part Status: Active Number of Circuits: 2 |
auf Bestellung 54000 Stücke: Lieferzeit 10-14 Tag (e) |
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NLA9306MU3TAG | onsemi |
Description: IC XLTR VL BIDIR 8-UDFNPackaging: Cut Tape (CT) Package / Case: 8-UFDFN Output Type: Open Drain Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) Supplier Device Package: 8-UDFN (1.45x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 0 V ~ 5.5 V Voltage - VCCB: 0 V ~ 5.5 V Part Status: Active Number of Circuits: 2 |
auf Bestellung 56359 Stücke: Lieferzeit 10-14 Tag (e) |
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CS8122YT5 | onsemi |
Description: IC REG LDO LIN 750MA 5V TO220-5Packaging: Tube Package / Case: TO-220-5 Mounting Type: Through Hole Supplier Device Package: TO-220-5 |
auf Bestellung 1367 Stücke: Lieferzeit 10-14 Tag (e) |
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SZ1SMB5956BT3G | onsemi |
Description: DIODE ZENER 200V 3W SMBTolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 200 V Impedance (Max) (Zzt): 1200 Ohms Supplier Device Package: SMB Grade: Automotive Part Status: Active Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 152 V Qualification: AEC-Q101 |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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SZ1SMB5956BT3G | onsemi |
Description: DIODE ZENER 200V 3W SMBTolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 200 V Impedance (Max) (Zzt): 1200 Ohms Supplier Device Package: SMB Grade: Automotive Part Status: Active Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 152 V Qualification: AEC-Q101 |
auf Bestellung 9640 Stücke: Lieferzeit 10-14 Tag (e) |
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FQA35N40 | onsemi |
Description: MOSFET N-CH 400V 35A TO3P |
Produkt ist nicht verfügbar |
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FDPF18N50T-G | onsemi |
Description: FDPF18N50 - 500V N-CHANNEL MOSFEPackaging: Bulk Part Status: Active |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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| GAZET1-AR0144ATSM-GEVK | onsemi | Description: BOARD EVAL 1MP 1/4 CIS 20 DEG CR |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| IAS1MOD-ARX3A0CSSM090110-GEVB | onsemi |
Description: ARX3A0 0.3MP MONO IN IAS MODULEPackaging: Box Sensitivity: 360fps Interface: MIPI Contents: Board(s) Voltage - Supply: 1.2V Sensor Type: Image Sensor Utilized IC / Part: ARX3A0 Supplied Contents: Board(s) Embedded: No Sensing Range: 0.3 Megapixel |
Produkt ist nicht verfügbar |
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| IAS1MOD-AR1335CSSC080110-GEVB | onsemi |
Description: AR1335 IAS MODULE 1/3.2 INCH 13MPackaging: Box Sensitivity: 30FPS Interface: MIPI Contents: Board(s) Sensor Type: Image Sensor Utilized IC / Part: AR1335 Supplied Contents: Board(s) Embedded: No Sensing Range: 13 Megapixel |
Produkt ist nicht verfügbar |
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AR0821CSSC18SMEAH3-GEVB | onsemi |
Description: 8MP 1/2 CIS IBGA95 RGB 18DEG CRA Packaging: Box Sensitivity: 60fps Contents: Board(s) Sensor Type: Image Sensor Utilized IC / Part: AR0821CS Supplied Contents: Board(s) Embedded: No Sensing Range: 8.3 Megapixel Part Status: Active |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| IAS1MOD-ARX3A0CSSC090110-GEVB | onsemi |
Description: ARX3A0 0.3MP COLOR IN IAS MODULEPackaging: Box Sensitivity: 360fps Interface: MIPI Contents: Board(s) Voltage - Supply: 1.2V Sensor Type: Image Sensor Utilized IC / Part: ARX3A0 Supplied Contents: Board(s) Embedded: No Sensing Range: 0.3 Megapixel |
Produkt ist nicht verfügbar |
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| IAS1MOD-AR0144CSSM080210-GEVB | onsemi |
Description: AR0144 IAS MODULE 1/4 INCH 1MP FPackaging: Box Sensitivity: 60fps Interface: MIPI Contents: Board(s) Voltage - Supply: 1.2V Sensor Type: Image Sensor Utilized IC / Part: AR0144CS Supplied Contents: Board(s) Embedded: No Sensing Range: 1 Megapixel Part Status: Active |
Produkt ist nicht verfügbar |
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| MARS1-AR0132AT6-GEVB | onsemi |
Description: MARS AR0132AT6 HB Packaging: Box Sensitivity: 60fps Interface: 2-Wire Serial Sensor Type: Image Sensor Utilized IC / Part: AR0132AT Supplied Contents: Board(s) Embedded: No Sensing Range: 1.2 Megapixel |
Produkt ist nicht verfügbar |
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| NOIX1SE012KBLFB-GEVB | onsemi |
Description: XGS 12000 RGB FBD HBPackaging: Box Sensitivity: 90fps Interface: HiSPi Contents: Board(s) Voltage - Supply: 1.1V ~ 1.3V Sensor Type: Image Sensor Utilized IC / Part: XGS 12000 Embedded: No Sensing Range: 12.6 Megapixel |
Produkt ist nicht verfügbar |
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| AR0147AT3C00XUEGH3-S2-GEVB | onsemi |
Description: 1.3MP 1/4 CIS IBGA89 (8X7) RGB D Packaging: Box Sensitivity: 60fps Interface: MIPI CSI-2, Parallel Voltage - Supply: 1.14V ~ 1.26V Sensor Type: Image Sensor Utilized IC / Part: AR0147AT Supplied Contents: Board(s) Embedded: No Sensing Range: 1.3 Megapixel |
Produkt ist nicht verfügbar |
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NTMFS5H414NLT1G | onsemi |
Description: MOSFET N-CH 40V 35A/210A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 210A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 20 V |
Produkt ist nicht verfügbar |
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NTMFS5H414NLT1G | onsemi |
Description: MOSFET N-CH 40V 35A/210A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 210A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 20 V |
auf Bestellung 1410 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS4C029NT3G | onsemi |
Description: MOSFET N-CH 30V 15A/46A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 5.88mOhm @ 30A, 10V Power Dissipation (Max): 2.49W (Ta), 23.6W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V |
Produkt ist nicht verfügbar |
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NTMFS4C029NT3G | onsemi |
Description: MOSFET N-CH 30V 15A/46A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 5.88mOhm @ 30A, 10V Power Dissipation (Max): 2.49W (Ta), 23.6W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V |
auf Bestellung 4959 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS6H836NLT1G | onsemi |
Description: MOSFET N-CH 80V 16A/77A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V Power Dissipation (Max): 3.7W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 95µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS6H836NLT1G | onsemi |
Description: MOSFET N-CH 80V 16A/77A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V Power Dissipation (Max): 3.7W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 95µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V |
auf Bestellung 2204 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS4939NT1G | onsemi |
Description: MOSFET N-CH 30V 9.3A/53A 5DFNPackaging: Bulk Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 53A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Power Dissipation (Max): 920mW (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1954 pF @ 15 V |
auf Bestellung 15216 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS4935NT3G | onsemi |
Description: MOSFET N-CH 30V 13A/93A 5DFNPackaging: Bulk Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 93A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V Power Dissipation (Max): 930mW (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 49.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 15 V |
auf Bestellung 130115 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS4946NT1G | onsemi |
Description: MOSFET N-CH 30V 12.7A/100A 5DFNPackaging: Bulk Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Power Dissipation (Max): 890mW (Ta), 55.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 11.5 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 12 V |
auf Bestellung 2886 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS4936NT1G | onsemi |
Description: MOSFET N-CH 30V 11.6A/79A 5DFNPackaging: Bulk Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 79A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V Power Dissipation (Max): 920mW (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3044 pF @ 15 V |
auf Bestellung 441321 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS4926NET1G | onsemi |
Description: MOSFET N-CH 30V 9A/44A 5DFN |
Produkt ist nicht verfügbar |
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NTMFS4943NT1G | onsemi |
Description: MOSFET N-CH 30V 8.3A/41A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 41A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 30A, 10V Power Dissipation (Max): 910mW (Ta), 22.3W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NTMFS4935NT1G | onsemi |
Description: MOSFET N-CH 30V 13A/93A 5DFNPackaging: Bulk Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 93A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V Power Dissipation (Max): 930mW (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 49.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 15 V |
auf Bestellung 1129881 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS4945NT1G | onsemi |
Description: MOSFET N-CH 30V 7.4A/35A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V Power Dissipation (Max): 910mW (Ta), 19.8W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NTMFS4922NET1G | onsemi |
Description: MOSFET N-CH 30V 17.1A/147A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 147A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V Power Dissipation (Max): 930mW (Ta), 69.44W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 76.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5505 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NTMFS4935NBT1G | onsemi |
Description: MOSFET N-CH 30V 13A/93A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 93A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V Power Dissipation (Max): 930mW (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 49.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NTMFS4931NT1G-IRH1 | onsemi |
Description: NTMFS4931 - MOSFET N CHANNEL SINPackaging: Bulk Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9821 pF @ 15 V |
auf Bestellung 4947 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTMFS4962NFT1G | onsemi |
Description: MOSFET N-CH 30V SO8FL Packaging: Bulk |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS4931NT3G | onsemi |
Description: MOSFET N-CH 30V 23A/246A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 246A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9821 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NTMFS4931NT3G | onsemi |
Description: MOSFET N-CH 30V 23A/246A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 246A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9821 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NTMFS4935NT1G-IRH1 | onsemi |
Description: NTMFS4935NT1G-IRH1 Packaging: Bulk Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 93A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V Power Dissipation (Max): 930mW (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 49.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FAN2315AMPX | onsemi |
Description: IC REG BUCK ADJ 15A 34PQFN Packaging: Tape & Reel (TR) Package / Case: 34-PowerTFQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 15A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 200kHz ~ 1MHz Voltage - Input (Max): 18V Topology: Buck Supplier Device Package: 34-PQFN (5.5x5) Synchronous Rectifier: Yes Voltage - Output (Max): 5.5V Voltage - Input (Min): 4.5V Voltage - Output (Min/Fixed): 0.6V Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NCP10671BD100R2G |
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Hersteller: onsemi
Description: IC OFFLINE SWITCH MULT TOP 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Duty Cycle: 66%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Either
Topology: Buck, Buck-Boost, Flyback
Voltage - Supply (Vcc/Vdd): 6.7V ~ 20V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Over Load, Over Voltage, Short Circuit
Voltage - Start Up: 9 V
Control Features: Soft Start
Part Status: Active
Description: IC OFFLINE SWITCH MULT TOP 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Duty Cycle: 66%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Either
Topology: Buck, Buck-Boost, Flyback
Voltage - Supply (Vcc/Vdd): 6.7V ~ 20V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Over Load, Over Voltage, Short Circuit
Voltage - Start Up: 9 V
Control Features: Soft Start
Part Status: Active
auf Bestellung 2084 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.19 EUR |
| 10+ | 1.97 EUR |
| 25+ | 1.66 EUR |
| 100+ | 1.3 EUR |
| 250+ | 1.13 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.93 EUR |
| NCP1096PAG |
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Hersteller: onsemi
Description: IC POE CNTRL 1 CHANNEL 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Type: Controller (PD), DC/DC
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 0V ~ 57V
Current - Supply: 336.7µA
Internal Switch(s): Yes
Standards: 802.3at (PoE+), 802.3af (PoE), 802.3bt
Supplier Device Package: 16-TSSOP-EP
Auxiliary Sense: Yes
Part Status: Active
Number of Channels: 1
Power - Max: 90 W
Description: IC POE CNTRL 1 CHANNEL 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Type: Controller (PD), DC/DC
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 0V ~ 57V
Current - Supply: 336.7µA
Internal Switch(s): Yes
Standards: 802.3at (PoE+), 802.3af (PoE), 802.3bt
Supplier Device Package: 16-TSSOP-EP
Auxiliary Sense: Yes
Part Status: Active
Number of Channels: 1
Power - Max: 90 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1096PAG |
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Hersteller: onsemi
Description: IC POE CNTRL 1 CHANNEL 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Type: Controller (PD), DC/DC
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 0V ~ 57V
Current - Supply: 336.7µA
Internal Switch(s): Yes
Standards: 802.3at (PoE+), 802.3af (PoE), 802.3bt
Supplier Device Package: 16-TSSOP-EP
Auxiliary Sense: Yes
Part Status: Active
Number of Channels: 1
Power - Max: 90 W
Description: IC POE CNTRL 1 CHANNEL 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Type: Controller (PD), DC/DC
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 0V ~ 57V
Current - Supply: 336.7µA
Internal Switch(s): Yes
Standards: 802.3at (PoE+), 802.3af (PoE), 802.3bt
Supplier Device Package: 16-TSSOP-EP
Auxiliary Sense: Yes
Part Status: Active
Number of Channels: 1
Power - Max: 90 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSP2907ATF |
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Hersteller: onsemi
Description: TRANS PNP 60V 0.6A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS PNP 60V 0.6A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
auf Bestellung 102000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2000+ | 0.12 EUR |
| 4000+ | 0.1 EUR |
| 6000+ | 0.098 EUR |
| 10000+ | 0.091 EUR |
| 14000+ | 0.087 EUR |
| 20000+ | 0.083 EUR |
| 50000+ | 0.075 EUR |
| 100000+ | 0.069 EUR |
| KSP2907ATF |
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Hersteller: onsemi
Description: TRANS PNP 60V 0.6A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS PNP 60V 0.6A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
auf Bestellung 107145 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 0.51 EUR |
| 57+ | 0.31 EUR |
| 100+ | 0.2 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.13 EUR |
| CAT25020ZI-GT3 |
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Hersteller: onsemi
Description: IC EEPROM 2KBIT SPI 8MSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 2KBIT SPI 8MSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1210+ | 0.44 EUR |
| MOC3073SM |
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Hersteller: onsemi
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.18V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 540µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 6mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.18V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 540µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 6mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 74111 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 1.48 EUR |
| 50+ | 0.83 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.64 EUR |
| 1000+ | 0.6 EUR |
| 2000+ | 0.57 EUR |
| 5000+ | 0.53 EUR |
| 10000+ | 0.51 EUR |
| 25000+ | 0.48 EUR |
| 7WB3306BMX1TCG |
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Hersteller: onsemi
Description: IC BUS SWITCH 1 X 1:1 8ULLGA
Description: IC BUS SWITCH 1 X 1:1 8ULLGA
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1603+ | 0.32 EUR |
| 7WB3306MUTAG |
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Hersteller: onsemi
Description: IC BUS SWITCH 1 X 1:1 8UDFN
Description: IC BUS SWITCH 1 X 1:1 8UDFN
auf Bestellung 59900 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1178+ | 0.42 EUR |
| 7WB3306CMX1TCG |
![]() |
Hersteller: onsemi
Description: IC BUS SWITCH 1 X 1:1 8ULLGA
Description: IC BUS SWITCH 1 X 1:1 8ULLGA
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1603+ | 0.32 EUR |
| 7WB3306AMX1TCG |
![]() |
Hersteller: onsemi
Description: IC BUS SWITCH 1 X 1:1 8ULLGA
Description: IC BUS SWITCH 1 X 1:1 8ULLGA
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1603+ | 0.32 EUR |
| NCD9812FBR2G |
auf Bestellung 144000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 74+ | 6.06 EUR |
| STR-NCD98010-GEVK |
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Hersteller: onsemi
Description: EVAL BOARD FOR NCD98010
Packaging: Bulk
Number of Bits: 12
Data Interface: SPI
Sampling Rate (Per Second): 2M
Utilized IC / Part: NCD98010
Supplied Contents: Board(s)
Number of A/D Converters: 1
Contents: Board(s)
Description: EVAL BOARD FOR NCD98010
Packaging: Bulk
Number of Bits: 12
Data Interface: SPI
Sampling Rate (Per Second): 2M
Utilized IC / Part: NCD98010
Supplied Contents: Board(s)
Number of A/D Converters: 1
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV3066MNTXG |
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Hersteller: onsemi
Description: IC LED DRVR RGLTR PWM 1.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 150kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting
Current - Output / Channel: 1.5A (Switch)
Internal Switch(s): Yes
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-DFN (4x4)
Dimming: Analog, PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 40V
Part Status: Active
Description: IC LED DRVR RGLTR PWM 1.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 150kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting
Current - Output / Channel: 1.5A (Switch)
Internal Switch(s): Yes
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-DFN (4x4)
Dimming: Analog, PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 40V
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV3066MNTXG |
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Hersteller: onsemi
Description: IC LED DRVR RGLTR PWM 1.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 150kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting
Current - Output / Channel: 1.5A (Switch)
Internal Switch(s): Yes
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-DFN (4x4)
Dimming: Analog, PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 40V
Part Status: Active
Description: IC LED DRVR RGLTR PWM 1.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 150kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting
Current - Output / Channel: 1.5A (Switch)
Internal Switch(s): Yes
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-DFN (4x4)
Dimming: Analog, PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 40V
Part Status: Active
auf Bestellung 3659 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.24 EUR |
| 10+ | 2.68 EUR |
| 25+ | 2.29 EUR |
| 100+ | 1.86 EUR |
| 250+ | 1.66 EUR |
| 500+ | 1.53 EUR |
| 1000+ | 1.43 EUR |
| FDI045N10A |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
Description: MOSFET N-CH 100V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD682S |
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Hersteller: onsemi
Description: TRANS PNP DARL 100V 4A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 14 W
Description: TRANS PNP DARL 100V 4A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 14 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD681STU |
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Hersteller: onsemi
Description: TRANS NPN DARL 100V 4A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 40 W
Description: TRANS NPN DARL 100V 4A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 40 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5991BRL-ON |
Hersteller: onsemi
Description: DIODE ZENER 4.3V 0.5W 5% UNIDIR
Description: DIODE ZENER 4.3V 0.5W 5% UNIDIR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NLSX3012DMR2G |
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Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8MSOP
Features: Auto-Direction Sensing
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-MSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 8MSOP
Features: Auto-Direction Sensing
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-MSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NLSX3012DMR2G |
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Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8MSOP
Features: Auto-Direction Sensing
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-MSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 8MSOP
Features: Auto-Direction Sensing
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-MSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NLA9306MU3TAG |
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Hersteller: onsemi
Description: IC XLTR VL BIDIR 8-UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: 8-UDFN (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0 V ~ 5.5 V
Voltage - VCCB: 0 V ~ 5.5 V
Part Status: Active
Number of Circuits: 2
Description: IC XLTR VL BIDIR 8-UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: 8-UDFN (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0 V ~ 5.5 V
Voltage - VCCB: 0 V ~ 5.5 V
Part Status: Active
Number of Circuits: 2
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.19 EUR |
| 6000+ | 0.18 EUR |
| 30000+ | 0.17 EUR |
| NLA9306MU3TAG |
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Hersteller: onsemi
Description: IC XLTR VL BIDIR 8-UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: 8-UDFN (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0 V ~ 5.5 V
Voltage - VCCB: 0 V ~ 5.5 V
Part Status: Active
Number of Circuits: 2
Description: IC XLTR VL BIDIR 8-UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: 8-UDFN (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0 V ~ 5.5 V
Voltage - VCCB: 0 V ~ 5.5 V
Part Status: Active
Number of Circuits: 2
auf Bestellung 56359 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 0.44 EUR |
| 57+ | 0.31 EUR |
| 64+ | 0.28 EUR |
| 100+ | 0.24 EUR |
| 250+ | 0.22 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.2 EUR |
| CS8122YT5 |
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Hersteller: onsemi
Description: IC REG LDO LIN 750MA 5V TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Supplier Device Package: TO-220-5
Description: IC REG LDO LIN 750MA 5V TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Supplier Device Package: TO-220-5
auf Bestellung 1367 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 217+ | 2.17 EUR |
| SZ1SMB5956BT3G |
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Hersteller: onsemi
Description: DIODE ZENER 200V 3W SMB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: SMB
Grade: Automotive
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
Qualification: AEC-Q101
Description: DIODE ZENER 200V 3W SMB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: SMB
Grade: Automotive
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.37 EUR |
| 5000+ | 0.35 EUR |
| 7500+ | 0.34 EUR |
| SZ1SMB5956BT3G |
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Hersteller: onsemi
Description: DIODE ZENER 200V 3W SMB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: SMB
Grade: Automotive
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
Qualification: AEC-Q101
Description: DIODE ZENER 200V 3W SMB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: SMB
Grade: Automotive
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
Qualification: AEC-Q101
auf Bestellung 9640 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 0.62 EUR |
| 31+ | 0.57 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.46 EUR |
| FQA35N40 |
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Hersteller: onsemi
Description: MOSFET N-CH 400V 35A TO3P
Description: MOSFET N-CH 400V 35A TO3P
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDPF18N50T-G |
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auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 37.14 EUR |
| GAZET1-AR0144ATSM-GEVK |
Hersteller: onsemi
Description: BOARD EVAL 1MP 1/4 CIS 20 DEG CR
Description: BOARD EVAL 1MP 1/4 CIS 20 DEG CR
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 2444.43 EUR |
| IAS1MOD-ARX3A0CSSM090110-GEVB |
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Hersteller: onsemi
Description: ARX3A0 0.3MP MONO IN IAS MODULE
Packaging: Box
Sensitivity: 360fps
Interface: MIPI
Contents: Board(s)
Voltage - Supply: 1.2V
Sensor Type: Image Sensor
Utilized IC / Part: ARX3A0
Supplied Contents: Board(s)
Embedded: No
Sensing Range: 0.3 Megapixel
Description: ARX3A0 0.3MP MONO IN IAS MODULE
Packaging: Box
Sensitivity: 360fps
Interface: MIPI
Contents: Board(s)
Voltage - Supply: 1.2V
Sensor Type: Image Sensor
Utilized IC / Part: ARX3A0
Supplied Contents: Board(s)
Embedded: No
Sensing Range: 0.3 Megapixel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IAS1MOD-AR1335CSSC080110-GEVB |
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Hersteller: onsemi
Description: AR1335 IAS MODULE 1/3.2 INCH 13M
Packaging: Box
Sensitivity: 30FPS
Interface: MIPI
Contents: Board(s)
Sensor Type: Image Sensor
Utilized IC / Part: AR1335
Supplied Contents: Board(s)
Embedded: No
Sensing Range: 13 Megapixel
Description: AR1335 IAS MODULE 1/3.2 INCH 13M
Packaging: Box
Sensitivity: 30FPS
Interface: MIPI
Contents: Board(s)
Sensor Type: Image Sensor
Utilized IC / Part: AR1335
Supplied Contents: Board(s)
Embedded: No
Sensing Range: 13 Megapixel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AR0821CSSC18SMEAH3-GEVB |
Hersteller: onsemi
Description: 8MP 1/2 CIS IBGA95 RGB 18DEG CRA
Packaging: Box
Sensitivity: 60fps
Contents: Board(s)
Sensor Type: Image Sensor
Utilized IC / Part: AR0821CS
Supplied Contents: Board(s)
Embedded: No
Sensing Range: 8.3 Megapixel
Part Status: Active
Description: 8MP 1/2 CIS IBGA95 RGB 18DEG CRA
Packaging: Box
Sensitivity: 60fps
Contents: Board(s)
Sensor Type: Image Sensor
Utilized IC / Part: AR0821CS
Supplied Contents: Board(s)
Embedded: No
Sensing Range: 8.3 Megapixel
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 587.82 EUR |
| IAS1MOD-ARX3A0CSSC090110-GEVB |
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Hersteller: onsemi
Description: ARX3A0 0.3MP COLOR IN IAS MODULE
Packaging: Box
Sensitivity: 360fps
Interface: MIPI
Contents: Board(s)
Voltage - Supply: 1.2V
Sensor Type: Image Sensor
Utilized IC / Part: ARX3A0
Supplied Contents: Board(s)
Embedded: No
Sensing Range: 0.3 Megapixel
Description: ARX3A0 0.3MP COLOR IN IAS MODULE
Packaging: Box
Sensitivity: 360fps
Interface: MIPI
Contents: Board(s)
Voltage - Supply: 1.2V
Sensor Type: Image Sensor
Utilized IC / Part: ARX3A0
Supplied Contents: Board(s)
Embedded: No
Sensing Range: 0.3 Megapixel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IAS1MOD-AR0144CSSM080210-GEVB |
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Hersteller: onsemi
Description: AR0144 IAS MODULE 1/4 INCH 1MP F
Packaging: Box
Sensitivity: 60fps
Interface: MIPI
Contents: Board(s)
Voltage - Supply: 1.2V
Sensor Type: Image Sensor
Utilized IC / Part: AR0144CS
Supplied Contents: Board(s)
Embedded: No
Sensing Range: 1 Megapixel
Part Status: Active
Description: AR0144 IAS MODULE 1/4 INCH 1MP F
Packaging: Box
Sensitivity: 60fps
Interface: MIPI
Contents: Board(s)
Voltage - Supply: 1.2V
Sensor Type: Image Sensor
Utilized IC / Part: AR0144CS
Supplied Contents: Board(s)
Embedded: No
Sensing Range: 1 Megapixel
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MARS1-AR0132AT6-GEVB |
Hersteller: onsemi
Description: MARS AR0132AT6 HB
Packaging: Box
Sensitivity: 60fps
Interface: 2-Wire Serial
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
Embedded: No
Sensing Range: 1.2 Megapixel
Description: MARS AR0132AT6 HB
Packaging: Box
Sensitivity: 60fps
Interface: 2-Wire Serial
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
Embedded: No
Sensing Range: 1.2 Megapixel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NOIX1SE012KBLFB-GEVB |
![]() |
Hersteller: onsemi
Description: XGS 12000 RGB FBD HB
Packaging: Box
Sensitivity: 90fps
Interface: HiSPi
Contents: Board(s)
Voltage - Supply: 1.1V ~ 1.3V
Sensor Type: Image Sensor
Utilized IC / Part: XGS 12000
Embedded: No
Sensing Range: 12.6 Megapixel
Description: XGS 12000 RGB FBD HB
Packaging: Box
Sensitivity: 90fps
Interface: HiSPi
Contents: Board(s)
Voltage - Supply: 1.1V ~ 1.3V
Sensor Type: Image Sensor
Utilized IC / Part: XGS 12000
Embedded: No
Sensing Range: 12.6 Megapixel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AR0147AT3C00XUEGH3-S2-GEVB |
Hersteller: onsemi
Description: 1.3MP 1/4 CIS IBGA89 (8X7) RGB D
Packaging: Box
Sensitivity: 60fps
Interface: MIPI CSI-2, Parallel
Voltage - Supply: 1.14V ~ 1.26V
Sensor Type: Image Sensor
Utilized IC / Part: AR0147AT
Supplied Contents: Board(s)
Embedded: No
Sensing Range: 1.3 Megapixel
Description: 1.3MP 1/4 CIS IBGA89 (8X7) RGB D
Packaging: Box
Sensitivity: 60fps
Interface: MIPI CSI-2, Parallel
Voltage - Supply: 1.14V ~ 1.26V
Sensor Type: Image Sensor
Utilized IC / Part: AR0147AT
Supplied Contents: Board(s)
Embedded: No
Sensing Range: 1.3 Megapixel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS5H414NLT1G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 40V 35A/210A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 210A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 20 V
Description: MOSFET N-CH 40V 35A/210A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 210A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS5H414NLT1G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 40V 35A/210A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 210A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 20 V
Description: MOSFET N-CH 40V 35A/210A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 210A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 20 V
auf Bestellung 1410 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 8.84 EUR |
| 10+ | 7.41 EUR |
| 100+ | 6 EUR |
| 500+ | 5.33 EUR |
| NTMFS4C029NT3G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 30V 15A/46A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 5.88mOhm @ 30A, 10V
Power Dissipation (Max): 2.49W (Ta), 23.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
Description: MOSFET N-CH 30V 15A/46A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 5.88mOhm @ 30A, 10V
Power Dissipation (Max): 2.49W (Ta), 23.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS4C029NT3G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 30V 15A/46A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 5.88mOhm @ 30A, 10V
Power Dissipation (Max): 2.49W (Ta), 23.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
Description: MOSFET N-CH 30V 15A/46A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 5.88mOhm @ 30A, 10V
Power Dissipation (Max): 2.49W (Ta), 23.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
auf Bestellung 4959 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.13 EUR |
| 10+ | 2 EUR |
| 100+ | 1.35 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 0.98 EUR |
| 2000+ | 0.9 EUR |
| NTMFS6H836NLT1G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 80V 16A/77A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 95µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Description: MOSFET N-CH 80V 16A/77A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 95µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1500+ | 0.83 EUR |
| NTMFS6H836NLT1G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 80V 16A/77A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 95µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Description: MOSFET N-CH 80V 16A/77A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 95µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
auf Bestellung 2204 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.82 EUR |
| 10+ | 1.79 EUR |
| 100+ | 1.2 EUR |
| 500+ | 0.95 EUR |
| NTMFS4939NT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 9.3A/53A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 920mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1954 pF @ 15 V
Description: MOSFET N-CH 30V 9.3A/53A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 920mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1954 pF @ 15 V
auf Bestellung 15216 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1031+ | 0.49 EUR |
| NTMFS4935NT3G |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 13A/93A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Power Dissipation (Max): 930mW (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 15 V
Description: MOSFET N-CH 30V 13A/93A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Power Dissipation (Max): 930mW (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 15 V
auf Bestellung 130115 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 683+ | 0.74 EUR |
| NTMFS4946NT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 12.7A/100A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 890mW (Ta), 55.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 12 V
Description: MOSFET N-CH 30V 12.7A/100A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 890mW (Ta), 55.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 12 V
auf Bestellung 2886 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 455+ | 1 EUR |
| NTMFS4936NT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 11.6A/79A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 920mW (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3044 pF @ 15 V
Description: MOSFET N-CH 30V 11.6A/79A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 920mW (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3044 pF @ 15 V
auf Bestellung 441321 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 916+ | 0.54 EUR |
| NTMFS4926NET1G |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 9A/44A 5DFN
Description: MOSFET N-CH 30V 9A/44A 5DFN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS4943NT1G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 30V 8.3A/41A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 30A, 10V
Power Dissipation (Max): 910mW (Ta), 22.3W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 15 V
Description: MOSFET N-CH 30V 8.3A/41A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 30A, 10V
Power Dissipation (Max): 910mW (Ta), 22.3W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 15 V
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| NTMFS4935NT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 13A/93A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Power Dissipation (Max): 930mW (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 15 V
Description: MOSFET N-CH 30V 13A/93A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Power Dissipation (Max): 930mW (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 15 V
auf Bestellung 1129881 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 721+ | 0.71 EUR |
| NTMFS4945NT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 7.4A/35A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 910mW (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 15 V
Description: MOSFET N-CH 30V 7.4A/35A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 910mW (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 15 V
Produkt ist nicht verfügbar
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| NTMFS4922NET1G |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 17.1A/147A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 147A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 930mW (Ta), 69.44W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5505 pF @ 15 V
Description: MOSFET N-CH 30V 17.1A/147A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 147A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 930mW (Ta), 69.44W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5505 pF @ 15 V
Produkt ist nicht verfügbar
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| NTMFS4935NBT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 13A/93A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Power Dissipation (Max): 930mW (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 15 V
Description: MOSFET N-CH 30V 13A/93A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Power Dissipation (Max): 930mW (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 15 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NTMFS4931NT1G-IRH1 |
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Hersteller: onsemi
Description: NTMFS4931 - MOSFET N CHANNEL SIN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9821 pF @ 15 V
Description: NTMFS4931 - MOSFET N CHANNEL SIN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9821 pF @ 15 V
auf Bestellung 4947 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 194+ | 2.36 EUR |
| NTMFS4962NFT1G |
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 221+ | 2.1 EUR |
| NTMFS4931NT3G |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 23A/246A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 246A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9821 pF @ 15 V
Description: MOSFET N-CH 30V 23A/246A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 246A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9821 pF @ 15 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NTMFS4931NT3G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 30V 23A/246A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 246A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9821 pF @ 15 V
Description: MOSFET N-CH 30V 23A/246A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 246A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9821 pF @ 15 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NTMFS4935NT1G-IRH1 |
Hersteller: onsemi
Description: NTMFS4935NT1G-IRH1
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Power Dissipation (Max): 930mW (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 15 V
Description: NTMFS4935NT1G-IRH1
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Power Dissipation (Max): 930mW (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 15 V
Produkt ist nicht verfügbar
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| FAN2315AMPX |
Hersteller: onsemi
Description: IC REG BUCK ADJ 15A 34PQFN
Packaging: Tape & Reel (TR)
Package / Case: 34-PowerTFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 15A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1MHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 34-PQFN (5.5x5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Obsolete
Description: IC REG BUCK ADJ 15A 34PQFN
Packaging: Tape & Reel (TR)
Package / Case: 34-PowerTFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 15A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1MHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 34-PQFN (5.5x5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Obsolete
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