Produkte > RENESAS ELECTRONICS CORPORATION > Alle Produkte des Herstellers RENESAS ELECTRONICS CORPORATION (29879) > Seite 272 nach 498

Wählen Sie Seite:   [  << Vorherige Seite ]  1 49 98 147 196 245 267 268 269 270 271 272 273 274 275 276 277 294 343 392 441 490 498  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
RJK0603DPN-A0#T2 RJK0603DPN-A0#T2 Renesas Electronics Corporation rjk0603dpn-a0-datasheet-0?language=en&r=1342431 Description: MOSFET N-CH 60V 80A TO220ABA
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220ABA
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power Dissipation (Max): 125W (Ta)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74HC4053P-E Renesas Electronics Corporation 74HC4053.pdf Description: 74HC4053 TRIPLE SINGLE-POLE, DOU
Packaging: Bulk
Part Status: Active
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
357+1.51 EUR
Mindestbestellmenge: 357 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PS2711-1-M-A PS2711-1-M-A Renesas Electronics Corporation ps2711-1-data-sheet Description: OPTOISO 3.75KV 1CH TRANS 4-SOP
auf Bestellung 22408 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.96 EUR
20+1.25 EUR
100+1.01 EUR
500+0.86 EUR
1000+0.81 EUR
2000+0.76 EUR
5000+0.71 EUR
10000+0.68 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP60N04VLK-E1-AY NP60N04VLK-E1-AY Renesas Electronics Corporation np60n04vlk40-v-60-n-channel-power-mos-fetapplication-automotive?r=499861 Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP60N04VLK-E1-AY NP60N04VLK-E1-AY Renesas Electronics Corporation np60n04vlk40-v-60-n-channel-power-mos-fetapplication-automotive?r=499861 Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2342 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.88 EUR
10+3.13 EUR
50+2.38 EUR
100+2.14 EUR
500+1.71 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP60N04VUK-E1-AY NP60N04VUK-E1-AY Renesas Electronics Corporation np60n04vukmos-field-effect-transistor Description: MOSFET N-CH 40V 60A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP60N04VUK-E1-AY NP60N04VUK-E1-AY Renesas Electronics Corporation np60n04vukmos-field-effect-transistor Description: MOSFET N-CH 40V 60A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4161 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.55 EUR
10+2.9 EUR
100+1.99 EUR
500+1.58 EUR
1000+1.46 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RAJ2800024H11HPF#GB0 RAJ2800024H11HPF#GB0 Renesas Electronics Corporation raj2800024h11hpf-datasheet?r=501086 Description: POWER TRS2 HIGHT SIDE IPD(MCP)
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Current - Supply: 2.5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RAJ2800024H11HPF#GB0 RAJ2800024H11HPF#GB0 Renesas Electronics Corporation raj2800024h11hpf-datasheet?r=501086 Description: POWER TRS2 HIGHT SIDE IPD(MCP)
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Current - Supply: 2.5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 859 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.39 EUR
10+7.93 EUR
25+7.31 EUR
100+6.63 EUR
250+6.31 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UPD166031AT1U-E1-AY UPD166031AT1U-E1-AY Renesas Electronics Corporation upd166031at1u-data-sheet Description: POWER TRS MP-3ZK HIGHT SIDE IPD(
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UPD166032T1U-E1-AY UPD166032T1U-E1-AY Renesas Electronics Corporation upd166032t1u-data-sheet?r=501201 Description: POWER TRANSISTOR IPD MP-3ZK HIGH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UPD166033T1U-E1-AY UPD166033T1U-E1-AY Renesas Electronics Corporation upd166033t1u-data-sheet Description: POWER DEVICE E IPD MP-3ZK HIGHT
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.59 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UPD166034T1U-E1-AY UPD166034T1U-E1-AY Renesas Electronics Corporation upd166034t1u-data-sheet?r=501211 Description: POWER TRS2 IPD MP-3ZK HIGH SIDE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PS9531L2-AX PS9531L2-AX Renesas Electronics Corporation ps9531ps9531l1ps9531l2ps9531l3-datasheet Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 75ns
Propagation Delay tpLH / tpHL (Max): 175ns, 175ns
Common Mode Transient Immunity (Min): 50kV/µs
Rise / Fall Time (Typ): 40ns, 40ns
Supplier Device Package: 8-SMD
Approval Agency: CSA, SEMKO, UL
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2A, 2A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.56V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Tube
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.14 EUR
50+5.05 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PS9531L3-AX PS9531L3-AX Renesas Electronics Corporation ps9531ps9531l1ps9531l2ps9531l3-datasheet Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Pulse Width Distortion (Max): 75ns
Propagation Delay tpLH / tpHL (Max): 175ns, 175ns
Common Mode Transient Immunity (Min): 50kV/µs
Rise / Fall Time (Typ): 40ns, 40ns
Supplier Device Package: 8-SMD
Approval Agency: CSA, SEMKO, UL
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2A, 2A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.56V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Tube
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
auf Bestellung 982 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.06 EUR
50+5 EUR
100+4.09 EUR
500+3.45 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RBN25H125S1FPQ-A0#CB0 RBN25H125S1FPQ-A0#CB0 Renesas Electronics Corporation rbn25h125s1fpq-a0-datasheet-0 Description: IGBT TRENCH 1250V 50A TO-247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 102 ns
Vce(on) (Max) @ Vge, Ic: 2.34V @ 15V, 25A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/109ns
Switching Energy: 1.1mJ (on), 800µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Power - Max: 223 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RBN40H125S1FPQ-A0#CB0 RBN40H125S1FPQ-A0#CB0 Renesas Electronics Corporation rbn40h125s1fpq-a0-datasheet-0 Description: IGBT TRENCH 1250V 80A TO247A
Power - Max: 319 W
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector (Ic) (Max): 80 A
Part Status: Active
Gate Charge: 85 nC
Test Condition: 600V, 40A, 10Ohm, 15V
Switching Energy: 2mJ (on), 1.4mJ (off)
Td (on/off) @ 25°C: 25ns/124ns
IGBT Type: Trench
Supplier Device Package: TO-247A
Vce(on) (Max) @ Vge, Ic: 2.34V @ 15V, 40A
Reverse Recovery Time (trr): 156 ns
Input Type: Standard
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 295 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.78 EUR
10+15.16 EUR
25+14.46 EUR
100+12.55 EUR
250+12 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RBN40H65T1FPQ-A0#CB0 RBN40H65T1FPQ-A0#CB0 Renesas Electronics Corporation rbn40h65t1fpq-a0-datasheet-0 Description: IGBT TRENCH 650V 80A TO-247A
Power - Max: 185 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Gate Charge: 28 nC
Test Condition: 400V, 40A, 16Ohm, 15V
Switching Energy: 620µJ (on), 520µJ (off)
Td (on/off) @ 25°C: 22ns/96ns
IGBT Type: Trench
Supplier Device Package: TO-247A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Reverse Recovery Time (trr): 55 ns
Input Type: Standard
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RBN50H65T1FPQ-A0#CB0 RBN50H65T1FPQ-A0#CB0 Renesas Electronics Corporation rbn50h65t1fpq-a0-datasheet-0 Description: IGBT TRENCH 650V 100A TO-247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/93ns
Switching Energy: 830µJ (on), 670µJ (off)
Test Condition: 400V, 50A, 16Ohm, 15V
Gate Charge: 36 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RBN75H65T1FPQ-A0#CB0 RBN75H65T1FPQ-A0#CB0 Renesas Electronics Corporation rbn75h65t1fpq-a0-datasheet Description: IGBT TRENCH 650V 150A TO-247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 29ns/113ns
Switching Energy: 1.6mJ (on), 1mJ (off)
Test Condition: 400V, 75A, 16Ohm, 15V
Gate Charge: 54 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 312 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RJP65T43DPM-00#T1 RJP65T43DPM-00#T1 Renesas Electronics Corporation rjp65t43dpm-datasheet Description: IGBT TRENCH 650V 40A TO-3PFM
Power - Max: 68.8 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 40 A
Part Status: Active
Gate Charge: 70 nC
Test Condition: 400V, 20A, 10Ohm, 15V
Switching Energy: 170µJ (on), 110µJ (off)
Td (on/off) @ 25°C: 30ns/107ns
IGBT Type: Trench
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Input Type: Standard
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RJP65T54DPM-A0#T2 RJP65T54DPM-A0#T2 Renesas Electronics Corporation rjp65t54dpm-a0-data-sheet-650v-30a-igbt-application-partial-switching-circuit Description: IGBT TRENCH 650V 60A TO-3PFP
Power - Max: 63.5 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Part Status: Active
Gate Charge: 72 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 330µJ (on), 760µJ (off)
Td (on/off) @ 25°C: 35ns/120ns
IGBT Type: Trench
Supplier Device Package: TO-3PFP
Vce(on) (Max) @ Vge, Ic: 1.68V @ 15V, 30A
Input Type: Standard
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-94
Packaging: Tube
auf Bestellung 683 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.66 EUR
25+13.23 EUR
100+11.23 EUR
500+9.72 EUR
Im Einkaufswagen  Stück im Wert von  UAH
RMLV0414EGSB-4S2#AA1 RMLV0414EGSB-4S2#AA1 Renesas Electronics Corporation rmlv0414e-series-datasheet-rev300 Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Memory Organization: 256K x 16
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Active
Supplier Device Package: 44-TSOP II
Memory Format: SRAM
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Tray
DigiKey Programmable: Not Verified
Technology: SRAM
Voltage - Supply: 2.7V ~ 3.6V
auf Bestellung 730 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.44 EUR
10+6.93 EUR
25+6.72 EUR
50+6.57 EUR
135+6.34 EUR
270+6.19 EUR
540+6.03 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RMLV0816BGSD-4S2#AA1 RMLV0816BGSD-4S2#AA1 Renesas Electronics Corporation rmlv0816bgsd-4s2-datasheet Description: IC SRAM 8MBIT PARALLEL 52TSOP II
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 1M x 8, 512K x 16
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Supplier Device Package: 52-TSOP II
Memory Format: SRAM
Technology: SRAM
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 52-TFSOP (0.350", 8.89mm Width)
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.1 EUR
10+11.04 EUR
25+10.83 EUR
40+10.76 EUR
80+9.65 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RMWV6416AGSA-5S2#AA0 RMWV6416AGSA-5S2#AA0 Renesas Electronics Corporation rmwv6416a-series-datasheet Description: IC SRAM 64MBIT PARALLEL 48TSOP I
Memory Organization: 8M x 8, 4M x 16
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Part Status: Active
Supplier Device Package: 48-TSOP I
Memory Format: SRAM
Technology: SRAM
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
1+135.55 EUR
Im Einkaufswagen  Stück im Wert von  UAH
8T73S1802NLGI/W 8T73S1802NLGI/W Renesas Electronics Corporation 8t73s1802-datasheet Description: IC CLK BUFFER 1:2 1GHZ 16VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVPECL
Type: Fanout Buffer (Distribution), Divider
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-VFQFPN (3x3)
Part Status: Active
Frequency - Max: 1 GHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
R5F52316ADFP#10 R5F52316ADFP#10 Renesas Electronics Corporation rx200-series-microcontrollers-brochure Description: IC MCU 32BIT 256KB FLSH 100LFQFP
auf Bestellung 692 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.83 EUR
10+8.31 EUR
25+7.68 EUR
100+6.97 EUR
250+6.64 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
R5F52316ADLA#20 R5F52316ADLA#20 Renesas Electronics Corporation rx200-series-microcontrollers-brochure Description: IC MCU 32BIT 256KB FLSH 100TFLGA
auf Bestellung 575 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.52 EUR
10+8.04 EUR
25+7.44 EUR
100+6.76 EUR
300+6.38 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP100P04PLG-E1-AY NP100P04PLG-E1-AY Renesas Electronics Corporation np100p04plg-datasheet Description: MOSFET P-CH 40V 100A TO263
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
800+6.08 EUR
1600+5.21 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP100P04PLG-E1-AY NP100P04PLG-E1-AY Renesas Electronics Corporation np100p04plg-datasheet Description: MOSFET P-CH 40V 100A TO263
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.08 EUR
10+8.46 EUR
100+6.84 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP109N04PUK-E1-AY NP109N04PUK-E1-AY Renesas Electronics Corporation np109n04pukmos-field-effect-transistor Description: MOSFET N-CH 40V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
800+3.64 EUR
1600+3.42 EUR
2400+3.34 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP109N04PUK-E1-AY NP109N04PUK-E1-AY Renesas Electronics Corporation np109n04pukmos-field-effect-transistor Description: MOSFET N-CH 40V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4400 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.72 EUR
10+6.46 EUR
100+4.61 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP109N055PUK-E1-AY NP109N055PUK-E1-AY Renesas Electronics Corporation np109n055pukmos-field-effect-transistor Description: MOSFET N-CH 55V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11250 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+2.98 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP109N055PUK-E1-AY NP109N055PUK-E1-AY Renesas Electronics Corporation np109n055pukmos-field-effect-transistor Description: MOSFET N-CH 55V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11250 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1560 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.68 EUR
10+5.72 EUR
100+4.05 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP110N04PUK-E1-AY NP110N04PUK-E1-AY Renesas Electronics Corporation np110n04pukmos-field-effect-transistor Description: MOSFET N-CH 40V 110A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP110N04PUK-E1-AY NP110N04PUK-E1-AY Renesas Electronics Corporation np110n04pukmos-field-effect-transistor Description: MOSFET N-CH 40V 110A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
auf Bestellung 1551 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.58 EUR
10+7.43 EUR
100+5.56 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP110N055PUK-E1-AY NP110N055PUK-E1-AY Renesas Electronics Corporation np110n055pukmos-field-effect-transistor Description: MOSFET N-CH 55V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP110N055PUK-E1-AY NP110N055PUK-E1-AY Renesas Electronics Corporation np110n055pukmos-field-effect-transistor Description: MOSFET N-CH 55V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 257 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.86 EUR
10+7.25 EUR
50+5.7 EUR
100+5.2 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP15P04SLG-E1-AY NP15P04SLG-E1-AY Renesas Electronics Corporation np15p04slg-datasheet Description: MOSFET P-CH 40V 15A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP15P04SLG-E1-AY NP15P04SLG-E1-AY Renesas Electronics Corporation np15p04slg-datasheet Description: MOSFET P-CH 40V 15A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 795 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.32 EUR
10+2.76 EUR
50+2.08 EUR
100+1.87 EUR
500+1.49 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP15P06SLG-E1-AY NP15P06SLG-E1-AY Renesas Electronics Corporation np15p06slg-datasheet Description: MOSFET P-CH 60V 15A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.17 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP15P06SLG-E1-AY NP15P06SLG-E1-AY Renesas Electronics Corporation np15p06slg-datasheet Description: MOSFET P-CH 60V 15A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5682 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.06 EUR
10+2.61 EUR
50+1.98 EUR
100+1.76 EUR
500+1.4 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP179N055TUK-E1-AY NP179N055TUK-E1-AY Renesas Electronics Corporation np179n055tuk-data-sheet?r=499346 Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Tray
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 288W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13950 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.37 EUR
10+13.17 EUR
25+12.27 EUR
80+10.98 EUR
230+10.34 EUR
800+9.69 EUR
1600+8.72 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP180N04TUK-E1-AY NP180N04TUK-E1-AY Renesas Electronics Corporation np180n04tukmos-field-effect-transistor Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+4.93 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP180N04TUK-E1-AY NP180N04TUK-E1-AY Renesas Electronics Corporation np180n04tukmos-field-effect-transistor Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1590 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.57 EUR
10+8.91 EUR
100+6.47 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP180N055TUK-E1-AY NP180N055TUK-E1-AY Renesas Electronics Corporation np180n055tukmos-field-effect-transistor Description: MOSFET N-CH 55V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+4.53 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP180N055TUK-E1-AY NP180N055TUK-E1-AY Renesas Electronics Corporation np180n055tukmos-field-effect-transistor Description: MOSFET N-CH 55V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
auf Bestellung 2182 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.71 EUR
10+7.83 EUR
100+5.64 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP35N055YUK-E1-AY NP35N055YUK-E1-AY Renesas Electronics Corporation np35n055yuk55-v-35-n-channel-power-mos-fetapplication-automotive Description: MOSFET N-CH 55V 35A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 18A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.89 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP35N055YUK-E1-AY NP35N055YUK-E1-AY Renesas Electronics Corporation np35n055yuk55-v-35-n-channel-power-mos-fetapplication-automotive Description: MOSFET N-CH 55V 35A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 18A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.34 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP36P04KDG-E1-AY NP36P04KDG-E1-AY Renesas Electronics Corporation D18686EJ3V0DS00.pdf Description: MOSFET P-CH 40V 36A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+2.05 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP36P04KDG-E1-AY NP36P04KDG-E1-AY Renesas Electronics Corporation D18686EJ3V0DS00.pdf Description: MOSFET P-CH 40V 36A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1577 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.93 EUR
10+3.84 EUR
100+2.67 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP36P04SDG-E1-AY NP36P04SDG-E1-AY Renesas Electronics Corporation np36p04sdg-datasheet Description: MOSFET P-CH 40V 36A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.43 EUR
7500+1.29 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP36P04SDG-E1-AY NP36P04SDG-E1-AY Renesas Electronics Corporation np36p04sdg-datasheet Description: MOSFET P-CH 40V 36A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 7630 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.82 EUR
10+3.11 EUR
50+2.37 EUR
100+2.13 EUR
500+1.7 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP36P06KDG-E1-AY NP36P06KDG-E1-AY Renesas Electronics Corporation D18687EJ3V0DS00.pdf Description: MOSFET P-CH 60V 36A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 29.5mOhm @ 18A, 10V
Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.96 EUR
1600+1.82 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP36P06KDG-E1-AY NP36P06KDG-E1-AY Renesas Electronics Corporation D18687EJ3V0DS00.pdf Description: MOSFET P-CH 60V 36A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 29.5mOhm @ 18A, 10V
Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1724 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.71 EUR
10+3.71 EUR
100+2.57 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP50N04YUK-E1-AY NP50N04YUK-E1-AY Renesas Electronics Corporation np50n04yuk40-v-50-n-channel-power-mos-fetapplication-automotive?r=499756 Description: LOW VOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.34 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP50N04YUK-E1-AY NP50N04YUK-E1-AY Renesas Electronics Corporation np50n04yuk40-v-50-n-channel-power-mos-fetapplication-automotive?r=499756 Description: LOW VOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4894 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.61 EUR
10+2.95 EUR
50+2.25 EUR
100+2.01 EUR
500+1.62 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP50P04KDG-E1-AY NP50P04KDG-E1-AY Renesas Electronics Corporation D18688EJ3V0DS00.pdf Description: MOSFET P-CH 40V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
800+2.5 EUR
1600+2.38 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP50P04KDG-E1-AY NP50P04KDG-E1-AY Renesas Electronics Corporation D18688EJ3V0DS00.pdf Description: MOSFET P-CH 40V 50A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2877 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.18 EUR
10+4.68 EUR
100+3.27 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP50P04SDG-E1-AY NP50P04SDG-E1-AY Renesas Electronics Corporation D19072EJ2V0DS00.pdf Description: MOSFET P-CH 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.75 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RJK0603DPN-A0#T2 rjk0603dpn-a0-datasheet-0?language=en&r=1342431
RJK0603DPN-A0#T2
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 60V 80A TO220ABA
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220ABA
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power Dissipation (Max): 125W (Ta)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74HC4053P-E 74HC4053.pdf
Hersteller: Renesas Electronics Corporation
Description: 74HC4053 TRIPLE SINGLE-POLE, DOU
Packaging: Bulk
Part Status: Active
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
357+1.51 EUR
Mindestbestellmenge: 357 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PS2711-1-M-A ps2711-1-data-sheet
PS2711-1-M-A
Hersteller: Renesas Electronics Corporation
Description: OPTOISO 3.75KV 1CH TRANS 4-SOP
auf Bestellung 22408 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.96 EUR
20+1.25 EUR
100+1.01 EUR
500+0.86 EUR
1000+0.81 EUR
2000+0.76 EUR
5000+0.71 EUR
10000+0.68 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP60N04VLK-E1-AY np60n04vlk40-v-60-n-channel-power-mos-fetapplication-automotive?r=499861
NP60N04VLK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP60N04VLK-E1-AY np60n04vlk40-v-60-n-channel-power-mos-fetapplication-automotive?r=499861
NP60N04VLK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2342 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.88 EUR
10+3.13 EUR
50+2.38 EUR
100+2.14 EUR
500+1.71 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP60N04VUK-E1-AY np60n04vukmos-field-effect-transistor
NP60N04VUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 60A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP60N04VUK-E1-AY np60n04vukmos-field-effect-transistor
NP60N04VUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 60A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4161 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.55 EUR
10+2.9 EUR
100+1.99 EUR
500+1.58 EUR
1000+1.46 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RAJ2800024H11HPF#GB0 raj2800024h11hpf-datasheet?r=501086
RAJ2800024H11HPF#GB0
Hersteller: Renesas Electronics Corporation
Description: POWER TRS2 HIGHT SIDE IPD(MCP)
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Current - Supply: 2.5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RAJ2800024H11HPF#GB0 raj2800024h11hpf-datasheet?r=501086
RAJ2800024H11HPF#GB0
Hersteller: Renesas Electronics Corporation
Description: POWER TRS2 HIGHT SIDE IPD(MCP)
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Current - Supply: 2.5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 859 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.39 EUR
10+7.93 EUR
25+7.31 EUR
100+6.63 EUR
250+6.31 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UPD166031AT1U-E1-AY upd166031at1u-data-sheet
UPD166031AT1U-E1-AY
Hersteller: Renesas Electronics Corporation
Description: POWER TRS MP-3ZK HIGHT SIDE IPD(
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UPD166032T1U-E1-AY upd166032t1u-data-sheet?r=501201
UPD166032T1U-E1-AY
Hersteller: Renesas Electronics Corporation
Description: POWER TRANSISTOR IPD MP-3ZK HIGH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UPD166033T1U-E1-AY upd166033t1u-data-sheet
UPD166033T1U-E1-AY
Hersteller: Renesas Electronics Corporation
Description: POWER DEVICE E IPD MP-3ZK HIGHT
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+2.59 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UPD166034T1U-E1-AY upd166034t1u-data-sheet?r=501211
UPD166034T1U-E1-AY
Hersteller: Renesas Electronics Corporation
Description: POWER TRS2 IPD MP-3ZK HIGH SIDE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PS9531L2-AX ps9531ps9531l1ps9531l2ps9531l3-datasheet
PS9531L2-AX
Hersteller: Renesas Electronics Corporation
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 75ns
Propagation Delay tpLH / tpHL (Max): 175ns, 175ns
Common Mode Transient Immunity (Min): 50kV/µs
Rise / Fall Time (Typ): 40ns, 40ns
Supplier Device Package: 8-SMD
Approval Agency: CSA, SEMKO, UL
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2A, 2A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.56V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Tube
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.14 EUR
50+5.05 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PS9531L3-AX ps9531ps9531l1ps9531l2ps9531l3-datasheet
PS9531L3-AX
Hersteller: Renesas Electronics Corporation
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Pulse Width Distortion (Max): 75ns
Propagation Delay tpLH / tpHL (Max): 175ns, 175ns
Common Mode Transient Immunity (Min): 50kV/µs
Rise / Fall Time (Typ): 40ns, 40ns
Supplier Device Package: 8-SMD
Approval Agency: CSA, SEMKO, UL
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2A, 2A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.56V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Tube
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
auf Bestellung 982 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.06 EUR
50+5 EUR
100+4.09 EUR
500+3.45 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RBN25H125S1FPQ-A0#CB0 rbn25h125s1fpq-a0-datasheet-0
RBN25H125S1FPQ-A0#CB0
Hersteller: Renesas Electronics Corporation
Description: IGBT TRENCH 1250V 50A TO-247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 102 ns
Vce(on) (Max) @ Vge, Ic: 2.34V @ 15V, 25A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/109ns
Switching Energy: 1.1mJ (on), 800µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Power - Max: 223 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RBN40H125S1FPQ-A0#CB0 rbn40h125s1fpq-a0-datasheet-0
RBN40H125S1FPQ-A0#CB0
Hersteller: Renesas Electronics Corporation
Description: IGBT TRENCH 1250V 80A TO247A
Power - Max: 319 W
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector (Ic) (Max): 80 A
Part Status: Active
Gate Charge: 85 nC
Test Condition: 600V, 40A, 10Ohm, 15V
Switching Energy: 2mJ (on), 1.4mJ (off)
Td (on/off) @ 25°C: 25ns/124ns
IGBT Type: Trench
Supplier Device Package: TO-247A
Vce(on) (Max) @ Vge, Ic: 2.34V @ 15V, 40A
Reverse Recovery Time (trr): 156 ns
Input Type: Standard
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 295 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.78 EUR
10+15.16 EUR
25+14.46 EUR
100+12.55 EUR
250+12 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RBN40H65T1FPQ-A0#CB0 rbn40h65t1fpq-a0-datasheet-0
RBN40H65T1FPQ-A0#CB0
Hersteller: Renesas Electronics Corporation
Description: IGBT TRENCH 650V 80A TO-247A
Power - Max: 185 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Gate Charge: 28 nC
Test Condition: 400V, 40A, 16Ohm, 15V
Switching Energy: 620µJ (on), 520µJ (off)
Td (on/off) @ 25°C: 22ns/96ns
IGBT Type: Trench
Supplier Device Package: TO-247A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Reverse Recovery Time (trr): 55 ns
Input Type: Standard
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RBN50H65T1FPQ-A0#CB0 rbn50h65t1fpq-a0-datasheet-0
RBN50H65T1FPQ-A0#CB0
Hersteller: Renesas Electronics Corporation
Description: IGBT TRENCH 650V 100A TO-247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/93ns
Switching Energy: 830µJ (on), 670µJ (off)
Test Condition: 400V, 50A, 16Ohm, 15V
Gate Charge: 36 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RBN75H65T1FPQ-A0#CB0 rbn75h65t1fpq-a0-datasheet
RBN75H65T1FPQ-A0#CB0
Hersteller: Renesas Electronics Corporation
Description: IGBT TRENCH 650V 150A TO-247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 29ns/113ns
Switching Energy: 1.6mJ (on), 1mJ (off)
Test Condition: 400V, 75A, 16Ohm, 15V
Gate Charge: 54 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 312 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RJP65T43DPM-00#T1 rjp65t43dpm-datasheet
RJP65T43DPM-00#T1
Hersteller: Renesas Electronics Corporation
Description: IGBT TRENCH 650V 40A TO-3PFM
Power - Max: 68.8 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 40 A
Part Status: Active
Gate Charge: 70 nC
Test Condition: 400V, 20A, 10Ohm, 15V
Switching Energy: 170µJ (on), 110µJ (off)
Td (on/off) @ 25°C: 30ns/107ns
IGBT Type: Trench
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Input Type: Standard
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RJP65T54DPM-A0#T2 rjp65t54dpm-a0-data-sheet-650v-30a-igbt-application-partial-switching-circuit
RJP65T54DPM-A0#T2
Hersteller: Renesas Electronics Corporation
Description: IGBT TRENCH 650V 60A TO-3PFP
Power - Max: 63.5 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Part Status: Active
Gate Charge: 72 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 330µJ (on), 760µJ (off)
Td (on/off) @ 25°C: 35ns/120ns
IGBT Type: Trench
Supplier Device Package: TO-3PFP
Vce(on) (Max) @ Vge, Ic: 1.68V @ 15V, 30A
Input Type: Standard
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-94
Packaging: Tube
auf Bestellung 683 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+21.66 EUR
25+13.23 EUR
100+11.23 EUR
500+9.72 EUR
Im Einkaufswagen  Stück im Wert von  UAH
RMLV0414EGSB-4S2#AA1 rmlv0414e-series-datasheet-rev300
RMLV0414EGSB-4S2#AA1
Hersteller: Renesas Electronics Corporation
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Memory Organization: 256K x 16
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Active
Supplier Device Package: 44-TSOP II
Memory Format: SRAM
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Tray
DigiKey Programmable: Not Verified
Technology: SRAM
Voltage - Supply: 2.7V ~ 3.6V
auf Bestellung 730 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.44 EUR
10+6.93 EUR
25+6.72 EUR
50+6.57 EUR
135+6.34 EUR
270+6.19 EUR
540+6.03 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RMLV0816BGSD-4S2#AA1 rmlv0816bgsd-4s2-datasheet
RMLV0816BGSD-4S2#AA1
Hersteller: Renesas Electronics Corporation
Description: IC SRAM 8MBIT PARALLEL 52TSOP II
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 1M x 8, 512K x 16
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Supplier Device Package: 52-TSOP II
Memory Format: SRAM
Technology: SRAM
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 52-TFSOP (0.350", 8.89mm Width)
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.1 EUR
10+11.04 EUR
25+10.83 EUR
40+10.76 EUR
80+9.65 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RMWV6416AGSA-5S2#AA0 rmwv6416a-series-datasheet
RMWV6416AGSA-5S2#AA0
Hersteller: Renesas Electronics Corporation
Description: IC SRAM 64MBIT PARALLEL 48TSOP I
Memory Organization: 8M x 8, 4M x 16
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Part Status: Active
Supplier Device Package: 48-TSOP I
Memory Format: SRAM
Technology: SRAM
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+135.55 EUR
Im Einkaufswagen  Stück im Wert von  UAH
8T73S1802NLGI/W 8t73s1802-datasheet
8T73S1802NLGI/W
Hersteller: Renesas Electronics Corporation
Description: IC CLK BUFFER 1:2 1GHZ 16VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVPECL
Type: Fanout Buffer (Distribution), Divider
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-VFQFPN (3x3)
Part Status: Active
Frequency - Max: 1 GHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
R5F52316ADFP#10 rx200-series-microcontrollers-brochure
R5F52316ADFP#10
Hersteller: Renesas Electronics Corporation
Description: IC MCU 32BIT 256KB FLSH 100LFQFP
auf Bestellung 692 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.83 EUR
10+8.31 EUR
25+7.68 EUR
100+6.97 EUR
250+6.64 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
R5F52316ADLA#20 rx200-series-microcontrollers-brochure
R5F52316ADLA#20
Hersteller: Renesas Electronics Corporation
Description: IC MCU 32BIT 256KB FLSH 100TFLGA
auf Bestellung 575 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.52 EUR
10+8.04 EUR
25+7.44 EUR
100+6.76 EUR
300+6.38 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP100P04PLG-E1-AY np100p04plg-datasheet
NP100P04PLG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 100A TO263
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+6.08 EUR
1600+5.21 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP100P04PLG-E1-AY np100p04plg-datasheet
NP100P04PLG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 100A TO263
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.08 EUR
10+8.46 EUR
100+6.84 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP109N04PUK-E1-AY np109n04pukmos-field-effect-transistor
NP109N04PUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+3.64 EUR
1600+3.42 EUR
2400+3.34 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP109N04PUK-E1-AY np109n04pukmos-field-effect-transistor
NP109N04PUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.72 EUR
10+6.46 EUR
100+4.61 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP109N055PUK-E1-AY np109n055pukmos-field-effect-transistor
NP109N055PUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11250 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+2.98 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP109N055PUK-E1-AY np109n055pukmos-field-effect-transistor
NP109N055PUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11250 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1560 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.68 EUR
10+5.72 EUR
100+4.05 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP110N04PUK-E1-AY np110n04pukmos-field-effect-transistor
NP110N04PUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 110A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP110N04PUK-E1-AY np110n04pukmos-field-effect-transistor
NP110N04PUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 110A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
auf Bestellung 1551 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.58 EUR
10+7.43 EUR
100+5.56 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP110N055PUK-E1-AY np110n055pukmos-field-effect-transistor
NP110N055PUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP110N055PUK-E1-AY np110n055pukmos-field-effect-transistor
NP110N055PUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 257 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.86 EUR
10+7.25 EUR
50+5.7 EUR
100+5.2 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP15P04SLG-E1-AY np15p04slg-datasheet
NP15P04SLG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 15A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP15P04SLG-E1-AY np15p04slg-datasheet
NP15P04SLG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 15A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 795 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.32 EUR
10+2.76 EUR
50+2.08 EUR
100+1.87 EUR
500+1.49 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP15P06SLG-E1-AY np15p06slg-datasheet
NP15P06SLG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 15A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.17 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP15P06SLG-E1-AY np15p06slg-datasheet
NP15P06SLG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 15A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5682 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.06 EUR
10+2.61 EUR
50+1.98 EUR
100+1.76 EUR
500+1.4 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP179N055TUK-E1-AY np179n055tuk-data-sheet?r=499346
NP179N055TUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Tray
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 288W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13950 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.37 EUR
10+13.17 EUR
25+12.27 EUR
80+10.98 EUR
230+10.34 EUR
800+9.69 EUR
1600+8.72 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP180N04TUK-E1-AY np180n04tukmos-field-effect-transistor
NP180N04TUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+4.93 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP180N04TUK-E1-AY np180n04tukmos-field-effect-transistor
NP180N04TUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1590 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.57 EUR
10+8.91 EUR
100+6.47 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP180N055TUK-E1-AY np180n055tukmos-field-effect-transistor
NP180N055TUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+4.53 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP180N055TUK-E1-AY np180n055tukmos-field-effect-transistor
NP180N055TUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
auf Bestellung 2182 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.71 EUR
10+7.83 EUR
100+5.64 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP35N055YUK-E1-AY np35n055yuk55-v-35-n-channel-power-mos-fetapplication-automotive
NP35N055YUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 35A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 18A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.89 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP35N055YUK-E1-AY np35n055yuk55-v-35-n-channel-power-mos-fetapplication-automotive
NP35N055YUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 35A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 18A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.34 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP36P04KDG-E1-AY D18686EJ3V0DS00.pdf
NP36P04KDG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 36A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+2.05 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP36P04KDG-E1-AY D18686EJ3V0DS00.pdf
NP36P04KDG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 36A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1577 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.93 EUR
10+3.84 EUR
100+2.67 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP36P04SDG-E1-AY np36p04sdg-datasheet
NP36P04SDG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 36A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.43 EUR
7500+1.29 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP36P04SDG-E1-AY np36p04sdg-datasheet
NP36P04SDG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 36A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 7630 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.82 EUR
10+3.11 EUR
50+2.37 EUR
100+2.13 EUR
500+1.7 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP36P06KDG-E1-AY D18687EJ3V0DS00.pdf
NP36P06KDG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 36A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 29.5mOhm @ 18A, 10V
Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+1.96 EUR
1600+1.82 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP36P06KDG-E1-AY D18687EJ3V0DS00.pdf
NP36P06KDG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 36A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 29.5mOhm @ 18A, 10V
Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1724 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.71 EUR
10+3.71 EUR
100+2.57 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP50N04YUK-E1-AY np50n04yuk40-v-50-n-channel-power-mos-fetapplication-automotive?r=499756
NP50N04YUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: LOW VOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.34 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP50N04YUK-E1-AY np50n04yuk40-v-50-n-channel-power-mos-fetapplication-automotive?r=499756
NP50N04YUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: LOW VOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4894 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.61 EUR
10+2.95 EUR
50+2.25 EUR
100+2.01 EUR
500+1.62 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP50P04KDG-E1-AY D18688EJ3V0DS00.pdf
NP50P04KDG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+2.5 EUR
1600+2.38 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP50P04KDG-E1-AY D18688EJ3V0DS00.pdf
NP50P04KDG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 50A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2877 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.18 EUR
10+4.68 EUR
100+3.27 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP50P04SDG-E1-AY D19072EJ2V0DS00.pdf
NP50P04SDG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.75 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 49 98 147 196 245 267 268 269 270 271 272 273 274 275 276 277 294 343 392 441 490 498  [ Nächste Seite >> ]