Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (103948) > Seite 1727 nach 1733
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SCT3060ALGC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; 165W; TO247 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 39A Power dissipation: 165W Case: TO247 On-state resistance: 60mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
SCT3120ALGC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 21A; Idm: 52A; 103W; TO247 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 21A Pulsed drain current: 52A Power dissipation: 103W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 156mΩ Mounting: THT Gate charge: 38nC Kind of channel: enhancement Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SCT3017ALGC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 118A Pulsed drain current: 295A Power dissipation: 428W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 22.1mΩ Mounting: THT Gate charge: 172nC Kind of channel: enhancement Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SCT3017ALHRC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 118A Pulsed drain current: 295A Power dissipation: 428W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 22.1mΩ Mounting: THT Gate charge: 172nC Kind of channel: enhancement Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SCT3022ALGC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 93A Pulsed drain current: 232A Power dissipation: 339W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 28.6mΩ Mounting: THT Gate charge: 133nC Kind of channel: enhancement Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SCT3022ALHRC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 93A Pulsed drain current: 232A Power dissipation: 339W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 28.6mΩ Mounting: THT Gate charge: 133nC Kind of channel: enhancement Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SCT3030ALGC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 70A Pulsed drain current: 175A Power dissipation: 262W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 39mΩ Mounting: THT Gate charge: 104nC Kind of channel: enhancement Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SCT3030ALHRC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 70A Pulsed drain current: 175A Power dissipation: 262W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 39mΩ Mounting: THT Gate charge: 104nC Kind of channel: enhancement Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SCT3030ARC14 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 70A Pulsed drain current: 175A Power dissipation: 262W Case: TO247-4 Gate-source voltage: -4...22V On-state resistance: 39mΩ Mounting: THT Gate charge: 104nC Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SCT3030AW7TL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 267W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 70A Pulsed drain current: 175A Power dissipation: 267W Case: TO263-7 Gate-source voltage: -4...22V On-state resistance: 39mΩ Mounting: SMD Gate charge: 104nC Kind of channel: enhancement Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SCT3060ALHRC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 97A; 165W; TO247 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 39A Pulsed drain current: 97A Power dissipation: 165W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 78mΩ Mounting: THT Gate charge: 58nC Kind of channel: enhancement Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SCT3060ARC14 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 97A; 165W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 39A Pulsed drain current: 97A Power dissipation: 165W Case: TO247-4 Gate-source voltage: -4...22V On-state resistance: 78mΩ Mounting: THT Gate charge: 58nC Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SCT3060AW7TL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 38A; Idm: 95A; 159W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Pulsed drain current: 95A Power dissipation: 159W Case: TO263-7 Gate-source voltage: -4...22V On-state resistance: 78mΩ Mounting: SMD Gate charge: 58nC Kind of channel: enhancement Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
RFN20NS6SFHTL | ROHM SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 600V; 20A; 60ns; D2PAK; Ufmax: 1.55V Type of diode: rectifying Max. off-state voltage: 0.6kV Load current: 20A Semiconductor structure: single diode Case: D2PAK Mounting: SMD Max. forward voltage: 1.55V Max. forward impulse current: 100A Reverse recovery time: 60ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
RFN20NS6STL | ROHM SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 600V; 20A; 60ns; D2PAK; Ufmax: 1.55V Type of diode: rectifying Max. off-state voltage: 0.6kV Load current: 20A Semiconductor structure: single diode Case: D2PAK Mounting: SMD Max. forward voltage: 1.55V Max. forward impulse current: 100A Reverse recovery time: 60ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
RF505BM6SFHTL | ROHM SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 5A Reverse recovery time: 30ns Semiconductor structure: single diode Case: DPAK Max. forward voltage: 1.7V Max. forward impulse current: 50A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
RF505BM6STL | ROHM SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 5A Reverse recovery time: 30ns Semiconductor structure: single diode Case: DPAK Max. forward voltage: 1.7V Max. forward impulse current: 50A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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KDZVTR2.4B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 1W; 2.4V; SMD; reel,tape; SOD123F; single diode; 200uA Kind of package: reel; tape Zener voltage: 2.4V Power dissipation: 1W Semiconductor structure: single diode Type of diode: Zener Leakage current: 0.2mA Tolerance: ±2% Case: SOD123F Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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KDZVTFTR2.4B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 1W; 2.4V; SMD; reel,tape; SOD123F; single diode; 200uA Kind of package: reel; tape Zener voltage: 2.4V Power dissipation: 1W Semiconductor structure: single diode Type of diode: Zener Leakage current: 0.2mA Case: SOD123F Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZX84C4V7LYFHT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 250mW; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 4.7V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 3µA Application: automotive industry |
Produkt ist nicht verfügbar |
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DTD123YKFRAT146 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DTD123YKT146 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
SCS306AMC | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; Ir: 120uA Power dissipation: 30W Case: TO220FP-2 Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Leakage current: 120µA Max. forward voltage: 1.71V Load current: 6A Max. load current: 22A Max. forward impulse current: 170A Max. off-state voltage: 650V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MSL0104RGBU1 | ROHM SEMICONDUCTOR |
![]() Description: LED; RGB; SMD; 2709; 2.1/3.3/3.2VDC; 6.9x2.2x2.15mm; 20mA Type of diode: LED LED colour: RGB Mounting: SMD Case: 2709 Dimensions: 6.9x2.2x2.15mm Wavelength: 465...475nm; 520...535nm; 619...629nm LED version: angular; tricolour Luminosity of red colour: 450...700mcd Luminosity of blue colour: 220...400mcd Luminosity of green colour: 710...1200mcd LED current: 20mA Front: flat Operating voltage: 2.1/3.3/3.2V DC |
auf Bestellung 110 Stücke: Lieferzeit 14-21 Tag (e) |
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BD45292G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Kind of package: reel; tape Case: SSOP5 Mounting: SMD Manufacturer series: BD45 Supply voltage: 950mV DC...10V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: open drain Integrated circuit features: Counter Timer Built-in Threshold on-voltage: 2.9V Kind of integrated circuit: voltage detector Operating temperature: -40...105°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BD4942G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Kind of RESET output: CMOS Active logical level: low Supply voltage: 950mV DC...10V DC Case: SSOP5 Operating temperature: -40...105°C Mounting: SMD Threshold on-voltage: 4.2V Kind of package: reel; tape Number of channels: 1 Integrated circuit features: ±1% accuracy Manufacturer series: BD49 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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DTA113ZCAHZGT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 33 Mounting: SMD Kind of package: reel; tape Base resistor: 1kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DTA114YCAHZGT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DTC113ZCAHZGT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ Current gain: 33 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DTC115ECAHZGT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 100kΩ Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 82 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Kind of transistor: BRT Base resistor: 100kΩ Base-emitter resistor: 100kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DTC124XCAHZGT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 47kΩ Current gain: 68 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
RUC002N05HZGT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 800A; 350mW; SST3 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 0.35W Case: SST3 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 800A Drain current: 0.2A On-state resistance: 7.2Ω Drain-source voltage: 50V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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2SAR502U3HZGT106 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; 30V; 0.5A; 200mW; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.5A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 200...500 Mounting: SMD Kind of package: reel; tape Frequency: 520MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
BR24T1MF-3AME2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 1MbEEPROM; 2-wire,I2C; 128kx8bit; 1MHz; SOP8 Mounting: SMD Operating temperature: -40...85°C Case: SOP8 Supply voltage: 1.7...5.5V DC Type of integrated circuit: EEPROM memory Interface: 2-wire; I2C Kind of memory: EEPROM Memory organisation: 128kx8bit Access time: 5ms Clock frequency: 1MHz Kind of package: reel; tape Kind of interface: serial Memory: 1Mb EEPROM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BR24G1MF-3AGTE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 1MbEEPROM; 2-wire,I2C; 128kx8bit; 1MHz; SOP8 Mounting: SMD Operating temperature: -40...85°C Case: SOP8 Supply voltage: 1.7...5.5V DC Type of integrated circuit: EEPROM memory Interface: 2-wire; I2C Kind of memory: EEPROM Memory organisation: 128kx8bit Access time: 5ms Clock frequency: 1MHz Kind of package: reel; tape Kind of interface: serial Memory: 1Mb EEPROM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
RQ6L020SPTCR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -2A; Idm: -8A; 1.25W; TSMT6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -2A Pulsed drain current: -8A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 266mΩ Mounting: SMD Gate charge: 7.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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DTC013ZMT2L | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 1kΩ Case: SOT723 Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 30 Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.15W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 1kΩ Base-emitter resistor: 10kΩ Mounting: SMD |
auf Bestellung 725 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA013ZMT2L | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 1kΩ Case: SOT723 Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 30 Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.15W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 1kΩ Base-emitter resistor: 10kΩ Mounting: SMD |
auf Bestellung 975 Stücke: Lieferzeit 14-21 Tag (e) |
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BD2065AFJ-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: power switch; high-side; 1A; Ch: 1; N-Channel; SMD; SOP-J8 Operating temperature: -40...85°C On-state resistance: 0.1Ω Output current: 1A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Active logical level: high Protection: over current OCP; overheating OTP; undervoltage UVP Kind of integrated circuit: high-side Mounting: SMD Case: SOP-J8 Supply voltage: 2.7...5.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BD2062FJ-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: power switch; high-side; 1A; Ch: 2; N-Channel; SMD; SOP-J8 Operating temperature: -40...85°C On-state resistance: 0.125Ω Output current: 1A Type of integrated circuit: power switch Number of channels: 2 Kind of output: N-Channel Active logical level: low Protection: over current OCP; overheating OTP; undervoltage UVP Kind of integrated circuit: high-side Mounting: SMD Case: SOP-J8 Supply voltage: 2.7...5.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BD2066FJ-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: power switch; high-side; 1A; Ch: 2; N-Channel; SMD; SOP-J8 Operating temperature: -40...85°C On-state resistance: 0.125Ω Output current: 1A Type of integrated circuit: power switch Number of channels: 2 Kind of output: N-Channel Active logical level: high Protection: over current OCP; overheating OTP; undervoltage UVP Kind of integrated circuit: high-side Mounting: SMD Case: SOP-J8 Supply voltage: 2.7...5.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BD2068FJ-MGE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: power switch; high-side; 1A; Ch: 1; N-Channel; SMD; SOP-J8 Operating temperature: -40...85°C On-state resistance: 0.125Ω Output current: 1A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Active logical level: high Protection: over current OCP; overheating OTP; undervoltage UVP Kind of integrated circuit: high-side Mounting: SMD Case: SOP-J8 Supply voltage: 2.7...5.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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KDZVTR9.1B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 1W; 9.1V; SMD; reel,tape; SOD123F; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 9.1V Mounting: SMD Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 20µA Tolerance: ±2% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
BD4955G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC Operating temperature: -40...105°C Case: SSOP5 Supply voltage: 950mV DC...10V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: CMOS Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 5.5V Manufacturer series: BD49 Kind of integrated circuit: voltage detector Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IMX8T108 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN x2; bipolar; 120V; 50mA; 300mW; SC74,SOT457 Mounting: SMD Case: SC74; SOT457 Frequency: 140MHz Collector-emitter voltage: 120V Current gain: 180...820 Collector current: 50mA Type of transistor: NPN x2 Power dissipation: 0.3W Polarisation: bipolar Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
BA3123F-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: operational amplifier; Ch: 2; SOP8; 4÷18VDC; reel,tape Operating temperature: -40...85°C Case: SOP8 Mounting: SMT Number of channels: 2 Slew rate: 2V/μs Voltage supply range: 4...18V DC Type of integrated circuit: operational amplifier Kind of package: reel; tape |
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BU7233YF-CGE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: comparator; Cmp: 2; SMT; SOP8; reel,tape; Iio: 1pA; IB: 6nA Type of integrated circuit: comparator Case: SOP8 Mounting: SMT Kind of package: reel; tape Operating temperature: -40...125°C Input offset voltage: 15mV Number of comparators: 2 Input offset current: 1pA Input bias current: 6nA Voltage supply range: ± 0.9...2.75V DC; 1.8...5.5V DC |
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RBQ30NS45BTL | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; D2PAK,SC83,TO263S; SMD; 45V; 30A Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 30A Semiconductor structure: single diode Case: D2PAK; SC83; TO263S Max. forward voltage: 0.59V Max. forward impulse current: 100A Kind of package: reel; tape Leakage current: 0.35mA |
Produkt ist nicht verfügbar |
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SCS206AJTLL | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 6A; reel,tape Type of diode: Schottky rectifying Case: TO263AB Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Kind of package: reel; tape Technology: SiC Max. load current: 26A Max. forward voltage: 1.55V Max. forward impulse current: 90A Power dissipation: 48W |
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SCS208AJTLL | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 8A; reel,tape Type of diode: Schottky rectifying Case: TO263AB Mounting: SMD Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Kind of package: reel; tape Technology: SiC Max. load current: 35A Max. forward voltage: 1.55V Max. forward impulse current: 110A Power dissipation: 62W |
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SCS212AJTLL | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 12A; reel,tape Type of diode: Schottky rectifying Case: TO263AB Mounting: SMD Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Kind of package: reel; tape Technology: SiC Max. load current: 51A Max. forward voltage: 1.63V Max. forward impulse current: 170A Leakage current: 240µA Power dissipation: 88W |
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Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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SCS215AJTLL | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 15A; reel,tape Type of diode: Schottky rectifying Case: TO263AB Mounting: SMD Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode Kind of package: reel; tape Technology: SiC Max. load current: 60A Max. forward voltage: 1.55V Max. forward impulse current: 200A Power dissipation: 100W |
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Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
SCS312AJTLL | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 12A; reel,tape Type of diode: Schottky rectifying Case: TO263AB Mounting: SMD Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Kind of package: reel; tape Technology: SiC Max. load current: 55A Max. forward voltage: 1.71V Max. forward impulse current: 350A Leakage current: 240µA Power dissipation: 88W |
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Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SCS206AJHRTLL | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 6A; reel,tape Type of diode: Schottky rectifying Case: TO263AB Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Kind of package: reel; tape Technology: SiC Max. load current: 26A Max. forward voltage: 1.63V Max. forward impulse current: 90A Leakage current: 120µA Power dissipation: 48W |
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Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SCS208AJHRTLL | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 8A; reel,tape Type of diode: Schottky rectifying Case: TO263AB Mounting: SMD Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Kind of package: reel; tape Technology: SiC Max. load current: 35A Max. forward voltage: 1.63V Max. forward impulse current: 110A Leakage current: 0.16mA Power dissipation: 62W |
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Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SCS210AJHRTLL | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO263AB Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Kind of package: reel; tape Technology: SiC Max. load current: 45A Max. forward voltage: 1.63V Max. forward impulse current: 150A Leakage current: 0.2mA Power dissipation: 83W |
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Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SCS215AJHRTLL | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 15A; reel,tape Type of diode: Schottky rectifying Case: TO263AB Mounting: SMD Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode Kind of package: reel; tape Technology: SiC Max. load current: 60A Max. forward voltage: 1.63V Max. forward impulse current: 200A Leakage current: 0.3mA Power dissipation: 100W |
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Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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UMT3904T106 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 40V; 0.2A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
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BA05CC0FP-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; TO252-3; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 1A Case: TO252-3 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 4...25V Voltage drop: 0.3V |
auf Bestellung 855 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC113ZKAT146 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59; SOT346 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ Current gain: 33 |
auf Bestellung 1456 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT3060ALGC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; 165W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 39A
Power dissipation: 165W
Case: TO247
On-state resistance: 60mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; 165W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 39A
Power dissipation: 165W
Case: TO247
On-state resistance: 60mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3120ALGC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 21A; Idm: 52A; 103W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 52A
Power dissipation: 103W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 156mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 21A; Idm: 52A; 103W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 52A
Power dissipation: 103W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 156mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3017ALGC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 118A
Pulsed drain current: 295A
Power dissipation: 428W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 22.1mΩ
Mounting: THT
Gate charge: 172nC
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 118A
Pulsed drain current: 295A
Power dissipation: 428W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 22.1mΩ
Mounting: THT
Gate charge: 172nC
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3017ALHRC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 118A
Pulsed drain current: 295A
Power dissipation: 428W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 22.1mΩ
Mounting: THT
Gate charge: 172nC
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 118A
Pulsed drain current: 295A
Power dissipation: 428W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 22.1mΩ
Mounting: THT
Gate charge: 172nC
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3022ALGC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 93A
Pulsed drain current: 232A
Power dissipation: 339W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 133nC
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 93A
Pulsed drain current: 232A
Power dissipation: 339W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 133nC
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3022ALHRC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 93A
Pulsed drain current: 232A
Power dissipation: 339W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 133nC
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 93A
Pulsed drain current: 232A
Power dissipation: 339W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 133nC
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3030ALGC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 262W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 104nC
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 262W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 104nC
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3030ALHRC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 262W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 104nC
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 262W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 104nC
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3030ARC14 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 262W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 104nC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 262W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 104nC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3030AW7TL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 267W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 267W
Case: TO263-7
Gate-source voltage: -4...22V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 104nC
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 267W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 267W
Case: TO263-7
Gate-source voltage: -4...22V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 104nC
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3060ALHRC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 97A; 165W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 39A
Pulsed drain current: 97A
Power dissipation: 165W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 58nC
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 97A; 165W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 39A
Pulsed drain current: 97A
Power dissipation: 165W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 58nC
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3060ARC14 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 97A; 165W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 39A
Pulsed drain current: 97A
Power dissipation: 165W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 58nC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 97A; 165W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 39A
Pulsed drain current: 97A
Power dissipation: 165W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 58nC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3060AW7TL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 38A; Idm: 95A; 159W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 95A
Power dissipation: 159W
Case: TO263-7
Gate-source voltage: -4...22V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 38A; Idm: 95A; 159W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 95A
Power dissipation: 159W
Case: TO263-7
Gate-source voltage: -4...22V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RFN20NS6SFHTL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 20A; 60ns; D2PAK; Ufmax: 1.55V
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Mounting: SMD
Max. forward voltage: 1.55V
Max. forward impulse current: 100A
Reverse recovery time: 60ns
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 20A; 60ns; D2PAK; Ufmax: 1.55V
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Mounting: SMD
Max. forward voltage: 1.55V
Max. forward impulse current: 100A
Reverse recovery time: 60ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
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RFN20NS6STL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 20A; 60ns; D2PAK; Ufmax: 1.55V
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Mounting: SMD
Max. forward voltage: 1.55V
Max. forward impulse current: 100A
Reverse recovery time: 60ns
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 20A; 60ns; D2PAK; Ufmax: 1.55V
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Mounting: SMD
Max. forward voltage: 1.55V
Max. forward impulse current: 100A
Reverse recovery time: 60ns
Kind of package: reel; tape
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RF505BM6SFHTL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
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RF505BM6STL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
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KDZVTR2.4B |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 2.4V; SMD; reel,tape; SOD123F; single diode; 200uA
Kind of package: reel; tape
Zener voltage: 2.4V
Power dissipation: 1W
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 0.2mA
Tolerance: ±2%
Case: SOD123F
Mounting: SMD
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 2.4V; SMD; reel,tape; SOD123F; single diode; 200uA
Kind of package: reel; tape
Zener voltage: 2.4V
Power dissipation: 1W
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 0.2mA
Tolerance: ±2%
Case: SOD123F
Mounting: SMD
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KDZVTFTR2.4B |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 2.4V; SMD; reel,tape; SOD123F; single diode; 200uA
Kind of package: reel; tape
Zener voltage: 2.4V
Power dissipation: 1W
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 0.2mA
Case: SOD123F
Mounting: SMD
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 2.4V; SMD; reel,tape; SOD123F; single diode; 200uA
Kind of package: reel; tape
Zener voltage: 2.4V
Power dissipation: 1W
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 0.2mA
Case: SOD123F
Mounting: SMD
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BZX84C4V7LYFHT116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Application: automotive industry
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DTD123YKFRAT146 |
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
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DTD123YKT146 |
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Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
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SCS306AMC |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; Ir: 120uA
Power dissipation: 30W
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 120µA
Max. forward voltage: 1.71V
Load current: 6A
Max. load current: 22A
Max. forward impulse current: 170A
Max. off-state voltage: 650V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; Ir: 120uA
Power dissipation: 30W
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 120µA
Max. forward voltage: 1.71V
Load current: 6A
Max. load current: 22A
Max. forward impulse current: 170A
Max. off-state voltage: 650V
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MSL0104RGBU1 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; RGB; SMD; 2709; 2.1/3.3/3.2VDC; 6.9x2.2x2.15mm; 20mA
Type of diode: LED
LED colour: RGB
Mounting: SMD
Case: 2709
Dimensions: 6.9x2.2x2.15mm
Wavelength: 465...475nm; 520...535nm; 619...629nm
LED version: angular; tricolour
Luminosity of red colour: 450...700mcd
Luminosity of blue colour: 220...400mcd
Luminosity of green colour: 710...1200mcd
LED current: 20mA
Front: flat
Operating voltage: 2.1/3.3/3.2V DC
Category: SMD colour LEDs
Description: LED; RGB; SMD; 2709; 2.1/3.3/3.2VDC; 6.9x2.2x2.15mm; 20mA
Type of diode: LED
LED colour: RGB
Mounting: SMD
Case: 2709
Dimensions: 6.9x2.2x2.15mm
Wavelength: 465...475nm; 520...535nm; 619...629nm
LED version: angular; tricolour
Luminosity of red colour: 450...700mcd
Luminosity of blue colour: 220...400mcd
Luminosity of green colour: 710...1200mcd
LED current: 20mA
Front: flat
Operating voltage: 2.1/3.3/3.2V DC
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
43+ | 1.69 EUR |
61+ | 1.19 EUR |
79+ | 0.92 EUR |
84+ | 0.86 EUR |
100+ | 0.84 EUR |
BD45292G-TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Kind of package: reel; tape
Case: SSOP5
Mounting: SMD
Manufacturer series: BD45
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: Counter Timer Built-in
Threshold on-voltage: 2.9V
Kind of integrated circuit: voltage detector
Operating temperature: -40...105°C
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Kind of package: reel; tape
Case: SSOP5
Mounting: SMD
Manufacturer series: BD45
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: Counter Timer Built-in
Threshold on-voltage: 2.9V
Kind of integrated circuit: voltage detector
Operating temperature: -40...105°C
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BD4942G-TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: CMOS
Active logical level: low
Supply voltage: 950mV DC...10V DC
Case: SSOP5
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 4.2V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: ±1% accuracy
Manufacturer series: BD49
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: CMOS
Active logical level: low
Supply voltage: 950mV DC...10V DC
Case: SSOP5
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 4.2V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: ±1% accuracy
Manufacturer series: BD49
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DTA113ZCAHZGT116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
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DTA114YCAHZGT116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
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DTC113ZCAHZGT116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
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DTC115ECAHZGT116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 100kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 82
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Kind of transistor: BRT
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 100kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 82
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Kind of transistor: BRT
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
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DTC124XCAHZGT116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
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RUC002N05HZGT116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 800A; 350mW; SST3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.35W
Case: SST3
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 800A
Drain current: 0.2A
On-state resistance: 7.2Ω
Drain-source voltage: 50V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 800A; 350mW; SST3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.35W
Case: SST3
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 800A
Drain current: 0.2A
On-state resistance: 7.2Ω
Drain-source voltage: 50V
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2SAR502U3HZGT106 |
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Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.5A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 520MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.5A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 520MHz
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BR24T1MF-3AME2 |
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Hersteller: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; 2-wire,I2C; 128kx8bit; 1MHz; SOP8
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP8
Supply voltage: 1.7...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 128kx8bit
Access time: 5ms
Clock frequency: 1MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 1Mb EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; 2-wire,I2C; 128kx8bit; 1MHz; SOP8
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP8
Supply voltage: 1.7...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 128kx8bit
Access time: 5ms
Clock frequency: 1MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 1Mb EEPROM
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BR24G1MF-3AGTE2 |
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Hersteller: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; 2-wire,I2C; 128kx8bit; 1MHz; SOP8
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP8
Supply voltage: 1.7...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 128kx8bit
Access time: 5ms
Clock frequency: 1MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 1Mb EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; 2-wire,I2C; 128kx8bit; 1MHz; SOP8
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP8
Supply voltage: 1.7...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 128kx8bit
Access time: 5ms
Clock frequency: 1MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 1Mb EEPROM
Produkt ist nicht verfügbar
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RQ6L020SPTCR |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; Idm: -8A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 266mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; Idm: -8A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 266mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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DTC013ZMT2L |
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Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 1kΩ
Case: SOT723
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 30
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 1kΩ
Case: SOT723
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 30
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
auf Bestellung 725 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
725+ | 0.099 EUR |
DTA013ZMT2L |
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Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 1kΩ
Case: SOT723
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 30
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 1kΩ
Case: SOT723
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 30
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
auf Bestellung 975 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
715+ | 0.1 EUR |
975+ | 0.073 EUR |
BD2065AFJ-E2 |
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Hersteller: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; N-Channel; SMD; SOP-J8
Operating temperature: -40...85°C
On-state resistance: 0.1Ω
Output current: 1A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Protection: over current OCP; overheating OTP; undervoltage UVP
Kind of integrated circuit: high-side
Mounting: SMD
Case: SOP-J8
Supply voltage: 2.7...5.5V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; N-Channel; SMD; SOP-J8
Operating temperature: -40...85°C
On-state resistance: 0.1Ω
Output current: 1A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Protection: over current OCP; overheating OTP; undervoltage UVP
Kind of integrated circuit: high-side
Mounting: SMD
Case: SOP-J8
Supply voltage: 2.7...5.5V
Produkt ist nicht verfügbar
Im Einkaufswagen
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BD2062FJ-E2 |
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Hersteller: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 2; N-Channel; SMD; SOP-J8
Operating temperature: -40...85°C
On-state resistance: 0.125Ω
Output current: 1A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Active logical level: low
Protection: over current OCP; overheating OTP; undervoltage UVP
Kind of integrated circuit: high-side
Mounting: SMD
Case: SOP-J8
Supply voltage: 2.7...5.5V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 2; N-Channel; SMD; SOP-J8
Operating temperature: -40...85°C
On-state resistance: 0.125Ω
Output current: 1A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Active logical level: low
Protection: over current OCP; overheating OTP; undervoltage UVP
Kind of integrated circuit: high-side
Mounting: SMD
Case: SOP-J8
Supply voltage: 2.7...5.5V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BD2066FJ-E2 |
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Hersteller: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 2; N-Channel; SMD; SOP-J8
Operating temperature: -40...85°C
On-state resistance: 0.125Ω
Output current: 1A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Active logical level: high
Protection: over current OCP; overheating OTP; undervoltage UVP
Kind of integrated circuit: high-side
Mounting: SMD
Case: SOP-J8
Supply voltage: 2.7...5.5V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 2; N-Channel; SMD; SOP-J8
Operating temperature: -40...85°C
On-state resistance: 0.125Ω
Output current: 1A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Active logical level: high
Protection: over current OCP; overheating OTP; undervoltage UVP
Kind of integrated circuit: high-side
Mounting: SMD
Case: SOP-J8
Supply voltage: 2.7...5.5V
Produkt ist nicht verfügbar
Im Einkaufswagen
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BD2068FJ-MGE2 |
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Hersteller: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; N-Channel; SMD; SOP-J8
Operating temperature: -40...85°C
On-state resistance: 0.125Ω
Output current: 1A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Protection: over current OCP; overheating OTP; undervoltage UVP
Kind of integrated circuit: high-side
Mounting: SMD
Case: SOP-J8
Supply voltage: 2.7...5.5V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; N-Channel; SMD; SOP-J8
Operating temperature: -40...85°C
On-state resistance: 0.125Ω
Output current: 1A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Protection: over current OCP; overheating OTP; undervoltage UVP
Kind of integrated circuit: high-side
Mounting: SMD
Case: SOP-J8
Supply voltage: 2.7...5.5V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
KDZVTR9.1B |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 9.1V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 9.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 20µA
Tolerance: ±2%
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 9.1V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 9.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 20µA
Tolerance: ±2%
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BD4955G-TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Operating temperature: -40...105°C
Case: SSOP5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 5.5V
Manufacturer series: BD49
Kind of integrated circuit: voltage detector
Mounting: SMD
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Operating temperature: -40...105°C
Case: SSOP5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 5.5V
Manufacturer series: BD49
Kind of integrated circuit: voltage detector
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
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IMX8T108 |
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Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 120V; 50mA; 300mW; SC74,SOT457
Mounting: SMD
Case: SC74; SOT457
Frequency: 140MHz
Collector-emitter voltage: 120V
Current gain: 180...820
Collector current: 50mA
Type of transistor: NPN x2
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 120V; 50mA; 300mW; SC74,SOT457
Mounting: SMD
Case: SC74; SOT457
Frequency: 140MHz
Collector-emitter voltage: 120V
Current gain: 180...820
Collector current: 50mA
Type of transistor: NPN x2
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BA3123F-E2 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; SOP8; 4÷18VDC; reel,tape
Operating temperature: -40...85°C
Case: SOP8
Mounting: SMT
Number of channels: 2
Slew rate: 2V/μs
Voltage supply range: 4...18V DC
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; SOP8; 4÷18VDC; reel,tape
Operating temperature: -40...85°C
Case: SOP8
Mounting: SMT
Number of channels: 2
Slew rate: 2V/μs
Voltage supply range: 4...18V DC
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
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BU7233YF-CGE2 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD comparators
Description: IC: comparator; Cmp: 2; SMT; SOP8; reel,tape; Iio: 1pA; IB: 6nA
Type of integrated circuit: comparator
Case: SOP8
Mounting: SMT
Kind of package: reel; tape
Operating temperature: -40...125°C
Input offset voltage: 15mV
Number of comparators: 2
Input offset current: 1pA
Input bias current: 6nA
Voltage supply range: ± 0.9...2.75V DC; 1.8...5.5V DC
Category: SMD comparators
Description: IC: comparator; Cmp: 2; SMT; SOP8; reel,tape; Iio: 1pA; IB: 6nA
Type of integrated circuit: comparator
Case: SOP8
Mounting: SMT
Kind of package: reel; tape
Operating temperature: -40...125°C
Input offset voltage: 15mV
Number of comparators: 2
Input offset current: 1pA
Input bias current: 6nA
Voltage supply range: ± 0.9...2.75V DC; 1.8...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
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RBQ30NS45BTL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,SC83,TO263S; SMD; 45V; 30A
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK; SC83; TO263S
Max. forward voltage: 0.59V
Max. forward impulse current: 100A
Kind of package: reel; tape
Leakage current: 0.35mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,SC83,TO263S; SMD; 45V; 30A
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK; SC83; TO263S
Max. forward voltage: 0.59V
Max. forward impulse current: 100A
Kind of package: reel; tape
Leakage current: 0.35mA
Produkt ist nicht verfügbar
Im Einkaufswagen
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SCS206AJTLL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: TO263AB
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
Max. load current: 26A
Max. forward voltage: 1.55V
Max. forward impulse current: 90A
Power dissipation: 48W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: TO263AB
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
Max. load current: 26A
Max. forward voltage: 1.55V
Max. forward impulse current: 90A
Power dissipation: 48W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCS208AJTLL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: TO263AB
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
Max. load current: 35A
Max. forward voltage: 1.55V
Max. forward impulse current: 110A
Power dissipation: 62W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: TO263AB
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
Max. load current: 35A
Max. forward voltage: 1.55V
Max. forward impulse current: 110A
Power dissipation: 62W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCS212AJTLL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: TO263AB
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
Max. load current: 51A
Max. forward voltage: 1.63V
Max. forward impulse current: 170A
Leakage current: 240µA
Power dissipation: 88W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: TO263AB
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
Max. load current: 51A
Max. forward voltage: 1.63V
Max. forward impulse current: 170A
Leakage current: 240µA
Power dissipation: 88W
Produkt ist nicht verfügbar
Im Einkaufswagen
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SCS215AJTLL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 15A; reel,tape
Type of diode: Schottky rectifying
Case: TO263AB
Mounting: SMD
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
Max. load current: 60A
Max. forward voltage: 1.55V
Max. forward impulse current: 200A
Power dissipation: 100W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 15A; reel,tape
Type of diode: Schottky rectifying
Case: TO263AB
Mounting: SMD
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
Max. load current: 60A
Max. forward voltage: 1.55V
Max. forward impulse current: 200A
Power dissipation: 100W
Produkt ist nicht verfügbar
Im Einkaufswagen
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SCS312AJTLL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: TO263AB
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
Max. load current: 55A
Max. forward voltage: 1.71V
Max. forward impulse current: 350A
Leakage current: 240µA
Power dissipation: 88W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: TO263AB
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
Max. load current: 55A
Max. forward voltage: 1.71V
Max. forward impulse current: 350A
Leakage current: 240µA
Power dissipation: 88W
Produkt ist nicht verfügbar
Im Einkaufswagen
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SCS206AJHRTLL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: TO263AB
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
Max. load current: 26A
Max. forward voltage: 1.63V
Max. forward impulse current: 90A
Leakage current: 120µA
Power dissipation: 48W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: TO263AB
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
Max. load current: 26A
Max. forward voltage: 1.63V
Max. forward impulse current: 90A
Leakage current: 120µA
Power dissipation: 48W
Produkt ist nicht verfügbar
Im Einkaufswagen
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SCS208AJHRTLL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: TO263AB
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
Max. load current: 35A
Max. forward voltage: 1.63V
Max. forward impulse current: 110A
Leakage current: 0.16mA
Power dissipation: 62W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: TO263AB
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
Max. load current: 35A
Max. forward voltage: 1.63V
Max. forward impulse current: 110A
Leakage current: 0.16mA
Power dissipation: 62W
Produkt ist nicht verfügbar
Im Einkaufswagen
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SCS210AJHRTLL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263AB
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
Max. load current: 45A
Max. forward voltage: 1.63V
Max. forward impulse current: 150A
Leakage current: 0.2mA
Power dissipation: 83W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263AB
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
Max. load current: 45A
Max. forward voltage: 1.63V
Max. forward impulse current: 150A
Leakage current: 0.2mA
Power dissipation: 83W
Produkt ist nicht verfügbar
Im Einkaufswagen
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SCS215AJHRTLL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 15A; reel,tape
Type of diode: Schottky rectifying
Case: TO263AB
Mounting: SMD
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
Max. load current: 60A
Max. forward voltage: 1.63V
Max. forward impulse current: 200A
Leakage current: 0.3mA
Power dissipation: 100W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 15A; reel,tape
Type of diode: Schottky rectifying
Case: TO263AB
Mounting: SMD
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
Max. load current: 60A
Max. forward voltage: 1.63V
Max. forward impulse current: 200A
Leakage current: 0.3mA
Power dissipation: 100W
Produkt ist nicht verfügbar
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UMT3904T106 |
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Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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BA05CC0FP-E2 |
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Hersteller: ROHM SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; TO252-3; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 1A
Case: TO252-3
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...25V
Voltage drop: 0.3V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; TO252-3; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 1A
Case: TO252-3
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...25V
Voltage drop: 0.3V
auf Bestellung 855 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
54+ | 1.33 EUR |
75+ | 0.96 EUR |
86+ | 0.83 EUR |
88+ | 0.82 EUR |
91+ | 0.79 EUR |
100+ | 0.78 EUR |
250+ | 0.76 EUR |
DTC113ZKAT146 |
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Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
auf Bestellung 1456 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
459+ | 0.16 EUR |
746+ | 0.096 EUR |
1456+ | 0.049 EUR |