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SCS220KGHRC SCS220KGHRC Rohm Semiconductor datasheet?p=SCS220KGHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIL CARB 1200V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1060pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SCS230AE2HRC SCS230AE2HRC Rohm Semiconductor ?p_p_state=maximized&p_p_mode=view&saveLastPath=false&_com_liferay_login_web_portlet_LoginPortlet_mvcRenderCommandName=%2Flogin%2Flogin&p_p_id=com_liferay_login_web_portlet_LoginPortlet&p_p_lifecycle=0&_com_liferay_login_web_portlet_L Description: DIODE ARR SIC SCHOT 650V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SCS240AE2HRC SCS240AE2HRC Rohm Semiconductor ?p_p_state=maximized&p_p_mode=view&saveLastPath=false&_com_liferay_login_web_portlet_LoginPortlet_mvcRenderCommandName=%2Flogin%2Flogin&p_p_id=com_liferay_login_web_portlet_LoginPortlet&p_p_lifecycle=0&_com_liferay_login_web_portlet_L Description: DIODE ARRAY SIC 650V 15A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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BD71815AGW-E2 BD71815AGW-E2 Rohm Semiconductor datasheet?p=BD71815AGW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG 13OUT BUCK/LDO 55UCSP
Packaging: Cut Tape (CT)
Package / Case: 55-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.9V ~ 5.5V
Frequency - Switching: 6MHz
Topology: Step-Down (Buck) Synchronous (5), Linear (LDO) (8)
Supplier Device Package: UCSP55M4C
Voltage/Current - Output 1: Programmable, 1A
Voltage/Current - Output 2: Programmable, 800mA
Voltage/Current - Output 3: Programmable, 500mA
w/LED Driver: Yes
w/Supervisor: No
w/Sequencer: Yes
Part Status: Active
Number of Outputs: 13
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100+4.47 EUR
250+4.25 EUR
500+4.12 EUR
1000+4.01 EUR
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TFZVTR18B TFZVTR18B Rohm Semiconductor TFZV18B Description: ZENER DIODE
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TFZVTR16B TFZVTR16B Rohm Semiconductor TFZV16B Description: DIODE ZENER 16V 500MW SOD323HE
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TFZVTR13B TFZVTR13B Rohm Semiconductor TFZV13B Description: ZENER DIODE
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TFZVTR2.0B TFZVTR2.0B Rohm Semiconductor TFZV2.0B Description: ZENER DIODE
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TFZVTR36B TFZVTR36B Rohm Semiconductor datasheet?p=TFZV36B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 36V 500MW SOD323HE
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: TUMD2M
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 27 V
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TFZVTR18B TFZVTR18B Rohm Semiconductor TFZV18B Description: ZENER DIODE
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TFZVTR16B TFZVTR16B Rohm Semiconductor TFZV16B Description: DIODE ZENER 16V 500MW SOD323HE
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TFZVTR13B TFZVTR13B Rohm Semiconductor TFZV13B Description: ZENER DIODE
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TFZVTR2.0B TFZVTR2.0B Rohm Semiconductor TFZV2.0B Description: ZENER DIODE
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TFZVTR36B TFZVTR36B Rohm Semiconductor datasheet?p=TFZV36B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 36V 500MW SOD323HE
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: TUMD2M
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 27 V
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BD8374HFP-MTR BD8374HFP-MTR Rohm Semiconductor datasheet?p=BD8374HFP-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC LED DRVR LIN PWM 500MA HRP7
Packaging: Cut Tape (CT)
Package / Case: HRP-7 (7 Leads + Tab)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100Hz ~ 5kHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: HRP7
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 42V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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BU90R104-E2 BU90R104-E2 Rohm Semiconductor datasheet?p=BU90R104&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC RX/DESERIALIZER LVDS 64TQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Output Type: LVCMOS
Mounting Type: Surface Mount
Number of Outputs: 35
Function: Deserializer
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Data Rate: 3.92Gbps
Input Type: LVDS
Number of Inputs: 5
Supplier Device Package: 64-TQFP (10x10)
Part Status: Active
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BU9796AMUV-E2 BU9796AMUV-E2 Rohm Semiconductor datasheet?p=BU9796AMUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC DRVR 48 SEGMENT VQFN024V4040
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Display Type: LCD
Mounting Type: Surface Mount
Interface: 2-Wire Serial
Configuration: 48 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Supplier Device Package: VQFN024V4040
Part Status: Active
Current - Supply: 12.5 µA
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RE1J002YNTCL RE1J002YNTCL Rohm Semiconductor datasheet?p=RE1J002YN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 50V 200MA EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
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SML-522MU8WT86 SML-522MU8WT86 Rohm Semiconductor datasheet?p=SML-522MU8W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED GREEN/RED DIFFUSED 1315 SMD
Packaging: Cut Tape (CT)
Package / Case: 0605 (1513 Metric)
Color: Green, Red
Size / Dimension: 1.50mm L x 1.30mm W
Mounting Type: Surface Mount
Millicandela Rating: 40mcd Green, 63mcd Red
Configuration: Independent
Voltage - Forward (Vf) (Typ): 2.2V Green, 2.2V Red
Lens Color: White
Current - Test: 20mA Green, 20mA Red
Height (Max): 0.70mm
Wavelength - Dominant: 572nm Green, 620nm Red
Supplier Device Package: 1315 (0605)
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.30mm x 1.10mm
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16+1.16 EUR
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SML-H12M8TT86 SML-H12M8TT86 Rohm Semiconductor datasheet?p=SML-H12M8T&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED GREEN CLEAR 0805 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Green
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 25mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 572nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
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SML-H12V8TT86C SML-H12V8TT86C Rohm Semiconductor datasheet?p=SML-H12V8T&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED RED CLEAR 2012 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Red
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 25mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 630nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
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MSL0402RGBU1 MSL0402RGBU1 Rohm Semiconductor datasheet?p=MSL0402RGBU&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED RGB DIFFUSED 1816 SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Color: Red, Green, Blue (RGB)
Size / Dimension: 1.80mm L x 1.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 400mcd Red, 550mcd Green, 180mcd Blue
Configuration: Independent
Voltage - Forward (Vf) (Typ): 2.1V Red, 3.5V Green, 3.3V Blue
Lens Color: White
Current - Test: 20mA Red, 20mA Green, 20mA Blue
Height (Max): 0.60mm
Wavelength - Dominant: 624nm Red, 527nm Green, 470nm Blue
Supplier Device Package: 1816 (0706)
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.80mm x 1.60mm
auf Bestellung 49273 Stücke:
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500+0.61 EUR
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QH8KA4TCR QH8KA4TCR Rohm Semiconductor datasheet?p=QH8KA4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 30V 9A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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500+0.86 EUR
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R6009KNJTL R6009KNJTL Rohm Semiconductor datasheet?p=R6009KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 9A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
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R6020KNJTL R6020KNJTL Rohm Semiconductor datasheet?p=R6020KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 20A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
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R6024KNJTL R6024KNJTL Rohm Semiconductor datasheet?p=R6024KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CHANNEL 600V 24A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Produkt ist nicht verfügbar
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RE1C002ZPTL RE1C002ZPTL Rohm Semiconductor datasheet?p=RE1C002ZP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 200MA EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V
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52+0.34 EUR
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500+0.16 EUR
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RF4E100AJTCR RF4E100AJTCR Rohm Semiconductor datasheet?p=RF4E100AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 10A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 4.5V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
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500+0.68 EUR
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RQ5C060BCTCL RQ5C060BCTCL Rohm Semiconductor datasheet?p=RQ5C060BC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CHANNEL 20V 6A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 21.1mOhm @ 6A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V
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RQ5E025ATTCL RQ5E025ATTCL Rohm Semiconductor datasheet?p=RQ5E025AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CHANNEL 30V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 2.5A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V
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RQ5E030AJTCL RQ5E030AJTCL Rohm Semiconductor datasheet?p=RQ5E030AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CHANNEL 30V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
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RQ5E070BNTCL RQ5E070BNTCL Rohm Semiconductor datasheet?p=RQ5E070BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 7A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 7A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
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RQ6E085BNTCR RQ6E085BNTCR Rohm Semiconductor datasheet?p=RQ6E085BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 8.5A SOT457
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
auf Bestellung 1639 Stücke:
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RQ7E055ATTCR RQ7E055ATTCR Rohm Semiconductor datasheet?p=RQ7E055AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 5.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
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RS3E135BNGZETB RS3E135BNGZETB Rohm Semiconductor rs3e135bngzetb-e.pdf Description: MOSFET N-CHANNEL 30V 9.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.5A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
auf Bestellung 4961 Stücke:
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RYC002N05T316 RYC002N05T316 Rohm Semiconductor datasheet?p=RYC002N05&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CHANNEL 50V 200MA SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: SST3
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
auf Bestellung 27985 Stücke:
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UT6JA2TCR UT6JA2TCR Rohm Semiconductor datasheet?p=UT6JA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2P-CH 30V 4A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
auf Bestellung 5669 Stücke:
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UT6K3TCR UT6K3TCR Rohm Semiconductor ut6k3tcr-e.pdf Description: MOSFET 2N-CH 30V 5.5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
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UT6MA3TCR UT6MA3TCR Rohm Semiconductor datasheet?p=UT6MA3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 20V 5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
auf Bestellung 5418 Stücke:
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MSL0402RGBU1 MSL0402RGBU1 Rohm Semiconductor datasheet?p=MSL0402RGBU&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED RGB DIFFUSED 1816 SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Color: Red, Green, Blue (RGB)
Size / Dimension: 1.80mm L x 1.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 400mcd Red, 550mcd Green, 180mcd Blue
Configuration: Independent
Voltage - Forward (Vf) (Typ): 2.1V Red, 3.5V Green, 3.3V Blue
Lens Color: White
Current - Test: 20mA Red, 20mA Green, 20mA Blue
Height (Max): 0.60mm
Wavelength - Dominant: 624nm Red, 527nm Green, 470nm Blue
Supplier Device Package: 1816 (0706)
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.80mm x 1.60mm
auf Bestellung 48000 Stücke:
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QH8JA1TCR QH8JA1TCR Rohm Semiconductor datasheet?p=QH8JA1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2P-CH 20V 5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Produkt ist nicht verfügbar
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QH8KA1TCR QH8KA1TCR Rohm Semiconductor datasheet?p=QH8KA1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 30V 4.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V
Rds On (Max) @ Id, Vgs: 73mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Produkt ist nicht verfügbar
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QH8KA4TCR QH8KA4TCR Rohm Semiconductor datasheet?p=QH8KA4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 30V 9A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 3000 Stücke:
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3000+0.69 EUR
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R6009KNJTL R6009KNJTL Rohm Semiconductor datasheet?p=R6009KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 9A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
Produkt ist nicht verfügbar
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R6009KNX R6009KNX Rohm Semiconductor r6009knx-e.pdf Description: MOSFET N-CH 600V 9A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
auf Bestellung 247 Stücke:
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R6011KNX R6011KNX Rohm Semiconductor r6011knx-e.pdf Description: MOSFET N-CH 600V 11A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
auf Bestellung 373 Stücke:
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R6015KNZC8 R6015KNZC8 Rohm Semiconductor r6015knzc17-e.pdf Description: MOSFET N-CHANNEL 600V 15A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Produkt ist nicht verfügbar
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R6020KNJTL R6020KNJTL Rohm Semiconductor datasheet?p=R6020KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 20A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
auf Bestellung 2000 Stücke:
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1000+2.69 EUR
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R6020KNX R6020KNX Rohm Semiconductor r6020knx-e.pdf Description: MOSFET N-CH 600V 20A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
auf Bestellung 278 Stücke:
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4+5.26 EUR
10+3.78 EUR
100+2.76 EUR
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R6020KNZC8 R6020KNZC8 Rohm Semiconductor TO3PF_Inner_Structure.pdf Description: MOSFET N-CHANNEL 600V 20A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Produkt ist nicht verfügbar
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R6024KNJTL R6024KNJTL Rohm Semiconductor datasheet?p=R6024KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CHANNEL 600V 24A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Produkt ist nicht verfügbar
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R6024KNX R6024KNX Rohm Semiconductor r6024knx-e.pdf Description: MOSFET N-CH 600V 24A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 291 Stücke:
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R6024KNZ1C9 R6024KNZ1C9 Rohm Semiconductor datasheet?p=R6024KNZ1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CHANNEL 600V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
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R6024KNZC8 R6024KNZC8 Rohm Semiconductor R6024KNZ Description: MOSFET N-CHANNEL 600V 24A TO3PF
Produkt ist nicht verfügbar
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R6030KNX R6030KNX Rohm Semiconductor r6030knx-e.pdf Description: MOSFET N-CH 600V 30A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
auf Bestellung 490 Stücke:
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R6030KNZ1C9 R6030KNZ1C9 Rohm Semiconductor R6030KNZ1 Description: MOSFET N-CHANNEL 600V 30A TO247
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R6030KNZC8 R6030KNZC8 Rohm Semiconductor TR_UL-e.pdf Description: MOSFET N-CHANNEL 600V 30A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Produkt ist nicht verfügbar
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R6035KNZC8 R6035KNZC8 Rohm Semiconductor R6035KNZ Description: MOSFET N-CHANNEL 600V 35A TO3PF
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RE1C002ZPTL RE1C002ZPTL Rohm Semiconductor datasheet?p=RE1C002ZP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 200MA EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V
Produkt ist nicht verfügbar
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RF4E100AJTCR RF4E100AJTCR Rohm Semiconductor datasheet?p=RF4E100AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 10A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 4.5V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
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3000+0.54 EUR
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SCS220KGHRC datasheet?p=SCS220KGHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS220KGHRC
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 1200V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1060pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SCS230AE2HRC ?p_p_state=maximized&p_p_mode=view&saveLastPath=false&_com_liferay_login_web_portlet_LoginPortlet_mvcRenderCommandName=%2Flogin%2Flogin&p_p_id=com_liferay_login_web_portlet_LoginPortlet&p_p_lifecycle=0&_com_liferay_login_web_portlet_L
SCS230AE2HRC
Hersteller: Rohm Semiconductor
Description: DIODE ARR SIC SCHOT 650V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SCS240AE2HRC ?p_p_state=maximized&p_p_mode=view&saveLastPath=false&_com_liferay_login_web_portlet_LoginPortlet_mvcRenderCommandName=%2Flogin%2Flogin&p_p_id=com_liferay_login_web_portlet_LoginPortlet&p_p_lifecycle=0&_com_liferay_login_web_portlet_L
SCS240AE2HRC
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SIC 650V 15A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BD71815AGW-E2 datasheet?p=BD71815AGW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD71815AGW-E2
Hersteller: Rohm Semiconductor
Description: IC REG 13OUT BUCK/LDO 55UCSP
Packaging: Cut Tape (CT)
Package / Case: 55-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.9V ~ 5.5V
Frequency - Switching: 6MHz
Topology: Step-Down (Buck) Synchronous (5), Linear (LDO) (8)
Supplier Device Package: UCSP55M4C
Voltage/Current - Output 1: Programmable, 1A
Voltage/Current - Output 2: Programmable, 800mA
Voltage/Current - Output 3: Programmable, 500mA
w/LED Driver: Yes
w/Supervisor: No
w/Sequencer: Yes
Part Status: Active
Number of Outputs: 13
auf Bestellung 8822 Stücke:
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3+7.04 EUR
10+5.36 EUR
25+4.94 EUR
100+4.47 EUR
250+4.25 EUR
500+4.12 EUR
1000+4.01 EUR
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TFZVTR18B TFZV18B
TFZVTR18B
Hersteller: Rohm Semiconductor
Description: ZENER DIODE
Produkt ist nicht verfügbar
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TFZVTR16B TFZV16B
TFZVTR16B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 16V 500MW SOD323HE
Produkt ist nicht verfügbar
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TFZVTR13B TFZV13B
TFZVTR13B
Hersteller: Rohm Semiconductor
Description: ZENER DIODE
Produkt ist nicht verfügbar
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TFZVTR2.0B TFZV2.0B
TFZVTR2.0B
Hersteller: Rohm Semiconductor
Description: ZENER DIODE
Produkt ist nicht verfügbar
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TFZVTR36B datasheet?p=TFZV36B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
TFZVTR36B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 36V 500MW SOD323HE
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: TUMD2M
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 27 V
Produkt ist nicht verfügbar
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TFZVTR18B TFZV18B
TFZVTR18B
Hersteller: Rohm Semiconductor
Description: ZENER DIODE
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TFZVTR16B TFZV16B
TFZVTR16B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 16V 500MW SOD323HE
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TFZVTR13B TFZV13B
TFZVTR13B
Hersteller: Rohm Semiconductor
Description: ZENER DIODE
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TFZVTR2.0B TFZV2.0B
TFZVTR2.0B
Hersteller: Rohm Semiconductor
Description: ZENER DIODE
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TFZVTR36B datasheet?p=TFZV36B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
TFZVTR36B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 36V 500MW SOD323HE
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: TUMD2M
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 27 V
auf Bestellung 2980 Stücke:
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Anzahl Preis
31+0.58 EUR
44+0.41 EUR
100+0.21 EUR
500+0.17 EUR
1000+0.12 EUR
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BD8374HFP-MTR datasheet?p=BD8374HFP-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD8374HFP-MTR
Hersteller: Rohm Semiconductor
Description: IC LED DRVR LIN PWM 500MA HRP7
Packaging: Cut Tape (CT)
Package / Case: HRP-7 (7 Leads + Tab)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100Hz ~ 5kHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: HRP7
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 42V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1864 Stücke:
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3+5.97 EUR
10+5.37 EUR
25+5.08 EUR
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250+4.18 EUR
500+3.75 EUR
1000+3.16 EUR
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BU90R104-E2 datasheet?p=BU90R104&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU90R104-E2
Hersteller: Rohm Semiconductor
Description: IC RX/DESERIALIZER LVDS 64TQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Output Type: LVCMOS
Mounting Type: Surface Mount
Number of Outputs: 35
Function: Deserializer
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Data Rate: 3.92Gbps
Input Type: LVDS
Number of Inputs: 5
Supplier Device Package: 64-TQFP (10x10)
Part Status: Active
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2+10.77 EUR
10+8.31 EUR
25+7.7 EUR
100+7.02 EUR
250+6.7 EUR
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BU9796AMUV-E2 datasheet?p=BU9796AMUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU9796AMUV-E2
Hersteller: Rohm Semiconductor
Description: IC DRVR 48 SEGMENT VQFN024V4040
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Display Type: LCD
Mounting Type: Surface Mount
Interface: 2-Wire Serial
Configuration: 48 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Supplier Device Package: VQFN024V4040
Part Status: Active
Current - Supply: 12.5 µA
auf Bestellung 35805 Stücke:
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8+2.27 EUR
11+1.66 EUR
25+1.51 EUR
100+1.34 EUR
250+1.26 EUR
500+1.21 EUR
1000+1.17 EUR
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RE1J002YNTCL datasheet?p=RE1J002YN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RE1J002YNTCL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 50V 200MA EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
auf Bestellung 15590 Stücke:
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38+0.48 EUR
60+0.29 EUR
100+0.18 EUR
500+0.14 EUR
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SML-522MU8WT86 datasheet?p=SML-522MU8W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SML-522MU8WT86
Hersteller: Rohm Semiconductor
Description: LED GREEN/RED DIFFUSED 1315 SMD
Packaging: Cut Tape (CT)
Package / Case: 0605 (1513 Metric)
Color: Green, Red
Size / Dimension: 1.50mm L x 1.30mm W
Mounting Type: Surface Mount
Millicandela Rating: 40mcd Green, 63mcd Red
Configuration: Independent
Voltage - Forward (Vf) (Typ): 2.2V Green, 2.2V Red
Lens Color: White
Current - Test: 20mA Green, 20mA Red
Height (Max): 0.70mm
Wavelength - Dominant: 572nm Green, 620nm Red
Supplier Device Package: 1315 (0605)
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.30mm x 1.10mm
auf Bestellung 11207 Stücke:
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16+1.16 EUR
26+0.68 EUR
100+0.45 EUR
500+0.35 EUR
1000+0.33 EUR
2000+0.3 EUR
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SML-H12M8TT86 datasheet?p=SML-H12M8T&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SML-H12M8TT86
Hersteller: Rohm Semiconductor
Description: LED GREEN CLEAR 0805 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Green
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 25mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 572nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
auf Bestellung 1745 Stücke:
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Anzahl Preis
21+0.84 EUR
35+0.51 EUR
100+0.3 EUR
1000+0.23 EUR
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SML-H12V8TT86C datasheet?p=SML-H12V8T&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SML-H12V8TT86C
Hersteller: Rohm Semiconductor
Description: LED RED CLEAR 2012 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Red
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 25mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 630nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
auf Bestellung 13112 Stücke:
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40+0.44 EUR
58+0.3 EUR
100+0.21 EUR
500+0.17 EUR
1000+0.16 EUR
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MSL0402RGBU1 datasheet?p=MSL0402RGBU&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
MSL0402RGBU1
Hersteller: Rohm Semiconductor
Description: LED RGB DIFFUSED 1816 SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Color: Red, Green, Blue (RGB)
Size / Dimension: 1.80mm L x 1.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 400mcd Red, 550mcd Green, 180mcd Blue
Configuration: Independent
Voltage - Forward (Vf) (Typ): 2.1V Red, 3.5V Green, 3.3V Blue
Lens Color: White
Current - Test: 20mA Red, 20mA Green, 20mA Blue
Height (Max): 0.60mm
Wavelength - Dominant: 624nm Red, 527nm Green, 470nm Blue
Supplier Device Package: 1816 (0706)
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.80mm x 1.60mm
auf Bestellung 49273 Stücke:
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13+1.41 EUR
18+0.98 EUR
100+0.72 EUR
500+0.61 EUR
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QH8KA4TCR datasheet?p=QH8KA4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8KA4TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 9A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 3344 Stücke:
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7+2.6 EUR
11+1.64 EUR
100+1.1 EUR
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R6009KNJTL datasheet?p=R6009KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6009KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
auf Bestellung 20 Stücke:
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6+3.45 EUR
10+3.1 EUR
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R6020KNJTL datasheet?p=R6020KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6020KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
auf Bestellung 3386 Stücke:
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3+7.52 EUR
10+4.95 EUR
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500+2.89 EUR
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R6024KNJTL datasheet?p=R6024KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6024KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 24A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Produkt ist nicht verfügbar
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RE1C002ZPTL datasheet?p=RE1C002ZP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RE1C002ZPTL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 200MA EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V
auf Bestellung 2991 Stücke:
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32+0.56 EUR
52+0.34 EUR
100+0.22 EUR
500+0.16 EUR
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RF4E100AJTCR datasheet?p=RF4E100AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF4E100AJTCR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 4.5V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
auf Bestellung 10476 Stücke:
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9+2.09 EUR
14+1.32 EUR
100+0.87 EUR
500+0.68 EUR
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RQ5C060BCTCL datasheet?p=RQ5C060BC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ5C060BCTCL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CHANNEL 20V 6A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 21.1mOhm @ 6A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V
auf Bestellung 4925 Stücke:
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10+1.8 EUR
16+1.12 EUR
100+0.74 EUR
500+0.57 EUR
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RQ5E025ATTCL datasheet?p=RQ5E025AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ5E025ATTCL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CHANNEL 30V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 2.5A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V
auf Bestellung 3702 Stücke:
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19+0.95 EUR
30+0.59 EUR
100+0.38 EUR
500+0.29 EUR
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RQ5E030AJTCL datasheet?p=RQ5E030AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ5E030AJTCL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 30V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
auf Bestellung 8490 Stücke:
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17+1.09 EUR
27+0.67 EUR
100+0.43 EUR
500+0.33 EUR
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RQ5E070BNTCL datasheet?p=RQ5E070BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ5E070BNTCL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 7A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 7A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
auf Bestellung 1055 Stücke:
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11+1.69 EUR
17+1.06 EUR
100+0.7 EUR
500+0.54 EUR
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RQ6E085BNTCR datasheet?p=RQ6E085BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ6E085BNTCR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 8.5A SOT457
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
auf Bestellung 1639 Stücke:
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Anzahl Preis
9+2.13 EUR
14+1.35 EUR
100+0.9 EUR
500+0.7 EUR
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RQ7E055ATTCR datasheet?p=RQ7E055AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ7E055ATTCR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 5.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
auf Bestellung 6161 Stücke:
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Anzahl Preis
11+1.72 EUR
14+1.33 EUR
100+1 EUR
500+0.84 EUR
1000+0.77 EUR
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RS3E135BNGZETB rs3e135bngzetb-e.pdf
RS3E135BNGZETB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 30V 9.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.5A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
auf Bestellung 4961 Stücke:
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Anzahl Preis
7+2.71 EUR
11+1.72 EUR
100+1.15 EUR
500+0.9 EUR
1000+0.82 EUR
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RYC002N05T316 datasheet?p=RYC002N05&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RYC002N05T316
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 50V 200MA SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: SST3
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
auf Bestellung 27985 Stücke:
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Anzahl Preis
29+0.62 EUR
42+0.43 EUR
100+0.22 EUR
500+0.19 EUR
1000+0.15 EUR
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UT6JA2TCR datasheet?p=UT6JA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UT6JA2TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 4A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
auf Bestellung 5669 Stücke:
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Anzahl Preis
10+1.85 EUR
16+1.16 EUR
100+0.76 EUR
500+0.59 EUR
1000+0.54 EUR
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UT6K3TCR ut6k3tcr-e.pdf
UT6K3TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 5.5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
auf Bestellung 8502 Stücke:
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Anzahl Preis
11+1.74 EUR
17+1.1 EUR
100+0.72 EUR
500+0.56 EUR
1000+0.51 EUR
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UT6MA3TCR datasheet?p=UT6MA3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UT6MA3TCR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 20V 5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
auf Bestellung 5418 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.06 EUR
14+1.29 EUR
100+0.86 EUR
500+0.67 EUR
1000+0.61 EUR
Mindestbestellmenge: 9
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MSL0402RGBU1 datasheet?p=MSL0402RGBU&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
MSL0402RGBU1
Hersteller: Rohm Semiconductor
Description: LED RGB DIFFUSED 1816 SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Color: Red, Green, Blue (RGB)
Size / Dimension: 1.80mm L x 1.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 400mcd Red, 550mcd Green, 180mcd Blue
Configuration: Independent
Voltage - Forward (Vf) (Typ): 2.1V Red, 3.5V Green, 3.3V Blue
Lens Color: White
Current - Test: 20mA Red, 20mA Green, 20mA Blue
Height (Max): 0.60mm
Wavelength - Dominant: 624nm Red, 527nm Green, 470nm Blue
Supplier Device Package: 1816 (0706)
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.80mm x 1.60mm
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.52 EUR
6000+0.5 EUR
9000+0.48 EUR
15000+0.47 EUR
21000+0.46 EUR
30000+0.45 EUR
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QH8JA1TCR datasheet?p=QH8JA1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8JA1TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 20V 5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Produkt ist nicht verfügbar
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QH8KA1TCR datasheet?p=QH8KA1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8KA1TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 4.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V
Rds On (Max) @ Id, Vgs: 73mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Produkt ist nicht verfügbar
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QH8KA4TCR datasheet?p=QH8KA4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8KA4TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 9A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.69 EUR
Mindestbestellmenge: 3000
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R6009KNJTL datasheet?p=R6009KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6009KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
Produkt ist nicht verfügbar
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R6009KNX r6009knx-e.pdf
R6009KNX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
auf Bestellung 247 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.29 EUR
10+2.78 EUR
100+1.91 EUR
Mindestbestellmenge: 5
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R6011KNX r6011knx-e.pdf
R6011KNX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 11A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
auf Bestellung 373 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.54 EUR
10+2.93 EUR
100+2.01 EUR
Mindestbestellmenge: 4
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R6015KNZC8 r6015knzc17-e.pdf
R6015KNZC8
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 15A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Produkt ist nicht verfügbar
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R6020KNJTL datasheet?p=R6020KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6020KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.69 EUR
2000+2.64 EUR
Mindestbestellmenge: 1000
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R6020KNX r6020knx-e.pdf
R6020KNX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
auf Bestellung 278 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.26 EUR
10+3.78 EUR
100+2.76 EUR
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R6020KNZC8 TO3PF_Inner_Structure.pdf
R6020KNZC8
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 20A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Produkt ist nicht verfügbar
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R6024KNJTL datasheet?p=R6024KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6024KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 24A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Produkt ist nicht verfügbar
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R6024KNX r6024knx-e.pdf
R6024KNX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 24A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 291 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.44 EUR
10+3.89 EUR
100+2.71 EUR
Mindestbestellmenge: 4
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R6024KNZ1C9 datasheet?p=R6024KNZ1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6024KNZ1C9
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 3 Stücke:
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Anzahl Preis
3+7.37 EUR
Mindestbestellmenge: 3
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R6024KNZC8 R6024KNZ
R6024KNZC8
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 24A TO3PF
Produkt ist nicht verfügbar
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R6030KNX r6030knx-e.pdf
R6030KNX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
auf Bestellung 490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.1 EUR
10+5.38 EUR
100+3.82 EUR
Mindestbestellmenge: 3
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R6030KNZ1C9 R6030KNZ1
R6030KNZ1C9
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 30A TO247
auf Bestellung 260 Stücke:
Lieferzeit 10-14 Tag (e)
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R6030KNZC8 TR_UL-e.pdf
R6030KNZC8
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 30A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Produkt ist nicht verfügbar
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R6035KNZC8 R6035KNZ
R6035KNZC8
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 35A TO3PF
auf Bestellung 360 Stücke:
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RE1C002ZPTL datasheet?p=RE1C002ZP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RE1C002ZPTL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 200MA EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V
Produkt ist nicht verfügbar
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RF4E100AJTCR datasheet?p=RF4E100AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF4E100AJTCR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 4.5V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.54 EUR
6000+0.5 EUR
Mindestbestellmenge: 3000
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