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RQ5E025ATTCL RQ5E025ATTCL Rohm Semiconductor datasheet?p=RQ5E025AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CHANNEL 30V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 2.5A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V
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RQ5E030AJTCL RQ5E030AJTCL Rohm Semiconductor datasheet?p=RQ5E030AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CHANNEL 30V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
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RQ5E070BNTCL RQ5E070BNTCL Rohm Semiconductor datasheet?p=RQ5E070BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 7A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 7A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
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RQ6E085BNTCR RQ6E085BNTCR Rohm Semiconductor datasheet?p=RQ6E085BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 8.5A SOT457
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
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RQ7E055ATTCR RQ7E055ATTCR Rohm Semiconductor datasheet?p=RQ7E055AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 5.5A TSMT8
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.5W (Tc)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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RQ7E110AJTCR RQ7E110AJTCR Rohm Semiconductor datasheet?p=RQ7E110AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 11A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 4.5A, 11V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 10mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
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RS3E135BNGZETB RS3E135BNGZETB Rohm Semiconductor rs3e135bngzetb-e.pdf Description: MOSFET N-CHANNEL 30V 9.5A 8SOP
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
FET Type: N-Channel
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RYC002N05T316 RYC002N05T316 Rohm Semiconductor datasheet?p=RYC002N05&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CHANNEL 50V 200MA SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: SST3
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
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UT6JA2TCR UT6JA2TCR Rohm Semiconductor datasheet?p=UT6JA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2P-CH 30V 4A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
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UT6K3TCR UT6K3TCR Rohm Semiconductor ut6k3tcr-e.pdf Description: MOSFET 2N-CH 30V 5.5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
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UT6MA3TCR UT6MA3TCR Rohm Semiconductor datasheet?p=UT6MA3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 20V 5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
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SCS302APC9 SCS302APC9 Rohm Semiconductor SCS302AP Description: DIODE SCHOTTKY 650V 2A TO220-2
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SCS304APC9 SCS304APC9 Rohm Semiconductor datasheet?p=SCS304AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SILICON CARBIDE 650V 4A
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
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MMBZ10VALT116 MMBZ10VALT116 Rohm Semiconductor datasheet?p=MMBZ10VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 6.5VWM 14.2VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.7A
Voltage - Reverse Standoff (Typ): 6.5V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.2V
Power - Peak Pulse: 24W
Power Line Protection: No
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MMBZ12VALT116 MMBZ12VALT116 Rohm Semiconductor datasheet?p=MMBZ12VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 8.5VWM 17VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 85pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.35A
Voltage - Reverse Standoff (Typ): 8.5V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
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MMBZ15VALT116 MMBZ15VALT116 Rohm Semiconductor datasheet?p=MMBZ15VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 12VWM 21VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 14.25V
Voltage - Clamping (Max) @ Ipp: 21V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
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MMBZ16VALT116 MMBZ16VALT116 Rohm Semiconductor mmbz16valt116-e.pdf Description: TVS DIODE 13VWM 23VC SOT23
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MMBZ18VALT116 MMBZ18VALT116 Rohm Semiconductor datasheet?p=MMBZ18VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 14.5VWM 25VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A
Voltage - Reverse Standoff (Typ): 14.5V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
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MMBZ20VALT116 MMBZ20VALT116 Rohm Semiconductor datasheet?p=MMBZ20VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 17VWM 28VC SSD3
Power Line Protection: No
Power - Peak Pulse: 40W
Voltage - Clamping (Max) @ Ipp: 28V
Voltage - Breakdown (Min): 19V
Unidirectional Channels: 2
Supplier Device Package: SSD3
Voltage - Reverse Standoff (Typ): 17V (Max)
Current - Peak Pulse (10/1000µs): 1.4A
Capacitance @ Frequency: 55pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MMBZ24VALT116 MMBZ24VALT116 Rohm Semiconductor MMBZ24VAL Description: TVS DIODE 22V 32V SOT23
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MMBZ27VALT116 MMBZ27VALT116 Rohm Semiconductor datasheet?p=MMBZ27VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 22VWM 40VC SOT23
Part Status: Not For New Designs
Power Line Protection: No
Power - Peak Pulse: 40W
Voltage - Clamping (Max) @ Ipp: 40V
Voltage - Breakdown (Min): 25.65V
Unidirectional Channels: 2
Supplier Device Package: SSD3
Voltage - Reverse Standoff (Typ): 22V (Max)
Current - Peak Pulse (10/1000µs): 1A
Capacitance @ Frequency: 42pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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MMBZ30VALT116 MMBZ30VALT116 Rohm Semiconductor datasheet?p=MMBZ30VAL&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key Description: TVS DIODE 24VWM 43VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 38pF @ 1MHz
Current - Peak Pulse (10/1000µs): 950mA
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 43V
Power - Peak Pulse: 40W
Power Line Protection: No
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MMBZ33VALT116 MMBZ33VALT116 Rohm Semiconductor MMBZ33VAL Description: TVS DIODE 26V 46V SOT23
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MMBZ10VALT116 MMBZ10VALT116 Rohm Semiconductor datasheet?p=MMBZ10VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 6.5VWM 14.2VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.7A
Voltage - Reverse Standoff (Typ): 6.5V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.2V
Power - Peak Pulse: 24W
Power Line Protection: No
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MMBZ12VALT116 MMBZ12VALT116 Rohm Semiconductor datasheet?p=MMBZ12VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 8.5VWM 17VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 85pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.35A
Voltage - Reverse Standoff (Typ): 8.5V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
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MMBZ15VALT116 MMBZ15VALT116 Rohm Semiconductor datasheet?p=MMBZ15VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 12VWM 21VC SOT23
Part Status: Not For New Designs
Power Line Protection: No
Power - Peak Pulse: 40W
Voltage - Clamping (Max) @ Ipp: 21V
Voltage - Breakdown (Min): 14.25V
Unidirectional Channels: 2
Supplier Device Package: SSD3
Voltage - Reverse Standoff (Typ): 12V (Max)
Current - Peak Pulse (10/1000µs): 1.9A
Capacitance @ Frequency: 75pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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MMBZ16VALT116 MMBZ16VALT116 Rohm Semiconductor mmbz16valt116-e.pdf Description: TVS DIODE 13VWM 23VC SOT23
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MMBZ18VALT116 MMBZ18VALT116 Rohm Semiconductor datasheet?p=MMBZ18VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 14.5VWM 25VC SOT23
Power - Peak Pulse: 40W
Voltage - Clamping (Max) @ Ipp: 25V
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 2
Supplier Device Package: SSD3
Voltage - Reverse Standoff (Typ): 14.5V (Max)
Current - Peak Pulse (10/1000µs): 1.6A
Capacitance @ Frequency: 60pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Part Status: Not For New Designs
Power Line Protection: No
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MMBZ20VALT116 MMBZ20VALT116 Rohm Semiconductor datasheet?p=MMBZ20VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 17VWM 28VC SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 17V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 28V
Power - Peak Pulse: 40W
Power Line Protection: No
Produkt ist nicht verfügbar
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MMBZ24VALT116 MMBZ24VALT116 Rohm Semiconductor MMBZ24VAL Description: TVS DIODE 22VWM 32VC SOT23
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MMBZ27VALT116 MMBZ27VALT116 Rohm Semiconductor datasheet?p=MMBZ27VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 22VWM 40VC SOT23
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Unidirectional Channels: 2
Supplier Device Package: SSD3
Voltage - Reverse Standoff (Typ): 22V (Max)
Current - Peak Pulse (10/1000µs): 1A
Capacitance @ Frequency: 42pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Part Status: Not For New Designs
Power Line Protection: No
Power - Peak Pulse: 40W
Voltage - Clamping (Max) @ Ipp: 40V
Voltage - Breakdown (Min): 25.65V
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MMBZ30VALT116 MMBZ30VALT116 Rohm Semiconductor datasheet?p=MMBZ30VAL&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key Description: TVS DIODE 24VWM 43VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 38pF @ 1MHz
Current - Peak Pulse (10/1000µs): 950mA
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 43V
Power - Peak Pulse: 40W
Power Line Protection: No
Produkt ist nicht verfügbar
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MMBZ33VALT116 MMBZ33VALT116 Rohm Semiconductor MMBZ33VAL Description: TVS DIODE 26VWM 46VC SOT23
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RB088BM150TL RB088BM150TL Rohm Semiconductor RB088BM150 Description: DIODE ARRAY SCHOTTKY 150V TO252
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RBQ10BM45ATL RBQ10BM45ATL Rohm Semiconductor Taping_TO252_TL-e.pdf Description: DIODE ARR SCHOTT 45V 10A TO252
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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RF501BM2STL RF501BM2STL Rohm Semiconductor datasheet?p=RF501BM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 200V 5A TO252
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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RF505BM6STL RF505BM6STL Rohm Semiconductor datasheet?p=RF505BM6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 600V 5A TO252
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RF601BM2DTL RF601BM2DTL Rohm Semiconductor datasheet?p=RF601BM2D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 200V 6A TO252
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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RFN10BM3STL RFN10BM3STL Rohm Semiconductor datasheet?p=RFN10BM3S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 350V 10A TO252
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 350 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 10A
Technology: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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RR601BM4STL RR601BM4STL Rohm Semiconductor rr601bm4s-e.pdf Description: DIODE GEN PURP 400V 6A TO252
Produkt ist nicht verfügbar
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RB088BM150TL RB088BM150TL Rohm Semiconductor RB088BM150 Description: DIODE ARRAY SCHOTTKY 150V TO252
Produkt ist nicht verfügbar
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RBQ10BM45ATL RBQ10BM45ATL Rohm Semiconductor Taping_TO252_TL-e.pdf Description: DIODE ARR SCHOTT 45V 10A TO252
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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RF501BM2STL RF501BM2STL Rohm Semiconductor datasheet?p=RF501BM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 200V 5A TO252
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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RF505BM6STL RF505BM6STL Rohm Semiconductor datasheet?p=RF505BM6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 600V 5A TO252
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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RF601BM2DTL RF601BM2DTL Rohm Semiconductor datasheet?p=RF601BM2D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 200V 6A TO252
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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RFN10BM3STL RFN10BM3STL Rohm Semiconductor datasheet?p=RFN10BM3S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 350V 10A TO252
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Voltage - DC Reverse (Vr) (Max): 350 V
Part Status: Active
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RR601BM4STL RR601BM4STL Rohm Semiconductor rr601bm4s-e.pdf Description: DIODE GEN PURP 400V 6A TO252
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1SS355WTE-17 Rohm Semiconductor Description: DIODE GEN PURPOSE
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar
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UDZWTE-1715B UDZWTE-1715B Rohm Semiconductor Description: DIODE ZENER UMD2
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SCT2H12NYTB SCT2H12NYTB Rohm Semiconductor datasheet?p=SCT2H12NY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 1700V 4A TO268
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tape & Reel (TR)
Vgs (Max): +22V, -6V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-268
Vgs(th) (Max) @ Id: 4V @ 410µA
Power Dissipation (Max): 44W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 18 V
Drain to Source Voltage (Vdss): 1700 V
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SCT2H12NYTB SCT2H12NYTB Rohm Semiconductor datasheet?p=SCT2H12NY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 1700V 4A TO268
Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 18 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +22V, -6V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-268
Vgs(th) (Max) @ Id: 4V @ 410µA
Power Dissipation (Max): 44W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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ROHM-STEPMO_EVK_20E ROHM-STEPMO_EVK_20E Rohm Semiconductor STEPMO_EVK_20x_Manual_REV1.3.pdf Description: BD63876 STEPMOTOR DRVR SHIELD
Packaging: Bulk
Function: Motor Controller/Driver, Stepper
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BD63876EFV
Platform: Arduino
Part Status: Obsolete
Produkt ist nicht verfügbar
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ROHM-760308MP-EVK-001 ROHM-760308MP-EVK-001 Rohm Semiconductor BD57015GWL.pdf Description: EVAL BOARD FOR BD57015 BD57020
Packaging: Bulk
Function: Wireless Power Supply/Charging
Type: Power Management
Contents: Board(s), Power Supply
Utilized IC / Part: BD57015, BD57020, ML610Q772, WE-WPCC
Supplied Contents: Board(s), Power Supply
Primary Attributes: Transmitter and Receiver
Secondary Attributes: On-Board LEDs
Part Status: Obsolete
Produkt ist nicht verfügbar
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SENSORSHIELD-EVK-001 Rohm Semiconductor ROHMSensorBoard_Manual_EN.pdf Description: MULTIPLE SENSOR SHIELD V1
Packaging: Bulk
Function: Multiple
Type: Sensor
Contents: Board(s)
Utilized IC / Part: BD1020, BD7411, BH1745, BM1383, BM1422, RPR-0521
Platform: SensorShield
Part Status: Obsolete
Produkt ist nicht verfügbar
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BA5912BFP-E2 Rohm Semiconductor BA5912BFP.pdf Description: IC MOTOR DRIVER 4.5-13.2V HSOP25
Packaging: Tape & Reel (TR)
Function: Driver - Fully Integrated, Control and Power Stage
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 13.2V
Applications: General Purpose
Voltage - Load: 4.5V ~ 13.2V
Motor Type - AC, DC: Brushed DC
Produkt ist nicht verfügbar
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BU9450KV-E2 Rohm Semiconductor Description: IC USB HOST MP3 DECODER VQFP
Produkt ist nicht verfügbar
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RSS090P03FU7TB RSS090P03FU7TB Rohm Semiconductor rss090p03.pdf Description: MOSFET P-CH 30V 9A 8SOIC
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SMR003RXF Rohm Semiconductor smr.pdf Description: RES SMD 1% 0.02W 010005
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BH1790GLC-E2 BH1790GLC-E2 Rohm Semiconductor datasheet?p=BH1790GLC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SENSOR OXIMETER/HEART RATE I2C
Packaging: Tape & Reel (TR)
Output Type: I2C
Operating Temperature: -20°C ~ 85°C
Sensor Type: Oximeter/Heart Rate
Part Status: Not For New Designs
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BH1790GLC-EVK-001 BH1790GLC-EVK-001 Rohm Semiconductor bh1790glc-software-manual-e.pdf Description: BH1790 SENSORSHIELD BOARD
Packaging: Bulk
Function: Heart Rate
Type: Sensor
Contents: Board(s)
Utilized IC / Part: BH1790
Platform: SensorShield
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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RQ5E025ATTCL datasheet?p=RQ5E025AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ5E025ATTCL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CHANNEL 30V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 2.5A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V
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RQ5E030AJTCL datasheet?p=RQ5E030AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ5E030AJTCL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 30V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
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6000+0.23 EUR
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15000+0.21 EUR
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RQ5E070BNTCL datasheet?p=RQ5E070BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ5E070BNTCL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 7A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 7A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
Produkt ist nicht verfügbar
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RQ6E085BNTCR datasheet?p=RQ6E085BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ6E085BNTCR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 8.5A SOT457
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
Produkt ist nicht verfügbar
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RQ7E055ATTCR datasheet?p=RQ7E055AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ7E055ATTCR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 5.5A TSMT8
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.5W (Tc)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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RQ7E110AJTCR datasheet?p=RQ7E110AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ7E110AJTCR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 11A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 4.5A, 11V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 10mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
Produkt ist nicht verfügbar
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RS3E135BNGZETB rs3e135bngzetb-e.pdf
RS3E135BNGZETB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 30V 9.5A 8SOP
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
FET Type: N-Channel
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2500+0.74 EUR
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RYC002N05T316 datasheet?p=RYC002N05&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RYC002N05T316
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 50V 200MA SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: SST3
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
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AnzahlPreis
3000+0.13 EUR
9000+0.12 EUR
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UT6JA2TCR datasheet?p=UT6JA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UT6JA2TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 4A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
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3000+0.5 EUR
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UT6K3TCR ut6k3tcr-e.pdf
UT6K3TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 5.5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
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AnzahlPreis
3000+0.46 EUR
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UT6MA3TCR datasheet?p=UT6MA3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UT6MA3TCR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 20V 5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Produkt ist nicht verfügbar
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SCS302APC9 SCS302AP
SCS302APC9
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 650V 2A TO220-2
auf Bestellung 514 Stücke:
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SCS304APC9 datasheet?p=SCS304AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS304APC9
Hersteller: Rohm Semiconductor
Description: DIODE SILICON CARBIDE 650V 4A
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
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MMBZ10VALT116 datasheet?p=MMBZ10VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
MMBZ10VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 6.5VWM 14.2VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.7A
Voltage - Reverse Standoff (Typ): 6.5V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.2V
Power - Peak Pulse: 24W
Power Line Protection: No
Produkt ist nicht verfügbar
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MMBZ12VALT116 datasheet?p=MMBZ12VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
MMBZ12VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 8.5VWM 17VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 85pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.35A
Voltage - Reverse Standoff (Typ): 8.5V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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MMBZ15VALT116 datasheet?p=MMBZ15VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
MMBZ15VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 12VWM 21VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 14.25V
Voltage - Clamping (Max) @ Ipp: 21V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
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3000+0.046 EUR
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MMBZ16VALT116 mmbz16valt116-e.pdf
MMBZ16VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 13VWM 23VC SOT23
Produkt ist nicht verfügbar
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MMBZ18VALT116 datasheet?p=MMBZ18VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
MMBZ18VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 14.5VWM 25VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A
Voltage - Reverse Standoff (Typ): 14.5V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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MMBZ20VALT116 datasheet?p=MMBZ20VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
MMBZ20VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 17VWM 28VC SSD3
Power Line Protection: No
Power - Peak Pulse: 40W
Voltage - Clamping (Max) @ Ipp: 28V
Voltage - Breakdown (Min): 19V
Unidirectional Channels: 2
Supplier Device Package: SSD3
Voltage - Reverse Standoff (Typ): 17V (Max)
Current - Peak Pulse (10/1000µs): 1.4A
Capacitance @ Frequency: 55pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MMBZ24VALT116 MMBZ24VAL
MMBZ24VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 22V 32V SOT23
Produkt ist nicht verfügbar
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MMBZ27VALT116 datasheet?p=MMBZ27VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
MMBZ27VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 22VWM 40VC SOT23
Part Status: Not For New Designs
Power Line Protection: No
Power - Peak Pulse: 40W
Voltage - Clamping (Max) @ Ipp: 40V
Voltage - Breakdown (Min): 25.65V
Unidirectional Channels: 2
Supplier Device Package: SSD3
Voltage - Reverse Standoff (Typ): 22V (Max)
Current - Peak Pulse (10/1000µs): 1A
Capacitance @ Frequency: 42pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MMBZ30VALT116 datasheet?p=MMBZ30VAL&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key
MMBZ30VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 24VWM 43VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 38pF @ 1MHz
Current - Peak Pulse (10/1000µs): 950mA
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 43V
Power - Peak Pulse: 40W
Power Line Protection: No
Produkt ist nicht verfügbar
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MMBZ33VALT116 MMBZ33VAL
MMBZ33VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 26V 46V SOT23
Produkt ist nicht verfügbar
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MMBZ10VALT116 datasheet?p=MMBZ10VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
MMBZ10VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 6.5VWM 14.2VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.7A
Voltage - Reverse Standoff (Typ): 6.5V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.2V
Power - Peak Pulse: 24W
Power Line Protection: No
Produkt ist nicht verfügbar
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MMBZ12VALT116 datasheet?p=MMBZ12VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
MMBZ12VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 8.5VWM 17VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 85pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.35A
Voltage - Reverse Standoff (Typ): 8.5V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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MMBZ15VALT116 datasheet?p=MMBZ15VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
MMBZ15VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 12VWM 21VC SOT23
Part Status: Not For New Designs
Power Line Protection: No
Power - Peak Pulse: 40W
Voltage - Clamping (Max) @ Ipp: 21V
Voltage - Breakdown (Min): 14.25V
Unidirectional Channels: 2
Supplier Device Package: SSD3
Voltage - Reverse Standoff (Typ): 12V (Max)
Current - Peak Pulse (10/1000µs): 1.9A
Capacitance @ Frequency: 75pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
46+0.39 EUR
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MMBZ16VALT116 mmbz16valt116-e.pdf
MMBZ16VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 13VWM 23VC SOT23
auf Bestellung 148 Stücke:
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MMBZ18VALT116 datasheet?p=MMBZ18VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
MMBZ18VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 14.5VWM 25VC SOT23
Power - Peak Pulse: 40W
Voltage - Clamping (Max) @ Ipp: 25V
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 2
Supplier Device Package: SSD3
Voltage - Reverse Standoff (Typ): 14.5V (Max)
Current - Peak Pulse (10/1000µs): 1.6A
Capacitance @ Frequency: 60pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Part Status: Not For New Designs
Power Line Protection: No
auf Bestellung 664 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
46+0.39 EUR
67+0.27 EUR
136+0.13 EUR
500+0.11 EUR
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MMBZ20VALT116 datasheet?p=MMBZ20VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
MMBZ20VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 17VWM 28VC SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 17V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 28V
Power - Peak Pulse: 40W
Power Line Protection: No
Produkt ist nicht verfügbar
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MMBZ24VALT116 MMBZ24VAL
MMBZ24VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 22VWM 32VC SOT23
auf Bestellung 433 Stücke:
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MMBZ27VALT116 datasheet?p=MMBZ27VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
MMBZ27VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 22VWM 40VC SOT23
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Unidirectional Channels: 2
Supplier Device Package: SSD3
Voltage - Reverse Standoff (Typ): 22V (Max)
Current - Peak Pulse (10/1000µs): 1A
Capacitance @ Frequency: 42pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Part Status: Not For New Designs
Power Line Protection: No
Power - Peak Pulse: 40W
Voltage - Clamping (Max) @ Ipp: 40V
Voltage - Breakdown (Min): 25.65V
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77+0.23 EUR
113+0.16 EUR
170+0.1 EUR
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MMBZ30VALT116 datasheet?p=MMBZ30VAL&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key
MMBZ30VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 24VWM 43VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 38pF @ 1MHz
Current - Peak Pulse (10/1000µs): 950mA
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 43V
Power - Peak Pulse: 40W
Power Line Protection: No
Produkt ist nicht verfügbar
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MMBZ33VALT116 MMBZ33VAL
MMBZ33VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 26VWM 46VC SOT23
Produkt ist nicht verfügbar
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RB088BM150TL RB088BM150
RB088BM150TL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTTKY 150V TO252
Produkt ist nicht verfügbar
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RBQ10BM45ATL Taping_TO252_TL-e.pdf
RBQ10BM45ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 45V 10A TO252
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RF501BM2STL datasheet?p=RF501BM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF501BM2STL
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 200V 5A TO252
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 27500 Stücke:
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2500+0.87 EUR
5000+0.83 EUR
12500+0.79 EUR
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RF505BM6STL datasheet?p=RF505BM6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF505BM6STL
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 5A TO252
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RF601BM2DTL datasheet?p=RF601BM2D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF601BM2DTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 200V 6A TO252
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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2500+0.88 EUR
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RFN10BM3STL datasheet?p=RFN10BM3S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFN10BM3STL
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 350V 10A TO252
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 350 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 10A
Technology: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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AnzahlPreis
2500+0.88 EUR
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RR601BM4STL rr601bm4s-e.pdf
RR601BM4STL
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 400V 6A TO252
Produkt ist nicht verfügbar
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RB088BM150TL RB088BM150
RB088BM150TL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTTKY 150V TO252
Produkt ist nicht verfügbar
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RBQ10BM45ATL Taping_TO252_TL-e.pdf
RBQ10BM45ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 45V 10A TO252
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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RF501BM2STL datasheet?p=RF501BM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF501BM2STL
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 200V 5A TO252
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 30771 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
9+2.11 EUR
11+1.73 EUR
100+1.35 EUR
500+1.14 EUR
1000+0.93 EUR
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RF505BM6STL datasheet?p=RF505BM6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF505BM6STL
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 5A TO252
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 310 Stücke:
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AnzahlPreis
7+2.87 EUR
10+2.57 EUR
100+2 EUR
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RF601BM2DTL datasheet?p=RF601BM2D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF601BM2DTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 200V 6A TO252
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 4821 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
9+2.13 EUR
11+1.74 EUR
100+1.35 EUR
500+1.15 EUR
1000+0.94 EUR
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RFN10BM3STL datasheet?p=RFN10BM3S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFN10BM3STL
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 350V 10A TO252
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Voltage - DC Reverse (Vr) (Max): 350 V
Part Status: Active
auf Bestellung 5105 Stücke:
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AnzahlPreis
12+1.55 EUR
13+1.39 EUR
100+1.34 EUR
500+1.03 EUR
1000+0.95 EUR
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RR601BM4STL rr601bm4s-e.pdf
RR601BM4STL
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 400V 6A TO252
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1SS355WTE-17
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURPOSE
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar
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UDZWTE-1715B
UDZWTE-1715B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER UMD2
Produkt ist nicht verfügbar
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SCT2H12NYTB datasheet?p=SCT2H12NY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT2H12NYTB
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1700V 4A TO268
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tape & Reel (TR)
Vgs (Max): +22V, -6V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-268
Vgs(th) (Max) @ Id: 4V @ 410µA
Power Dissipation (Max): 44W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 18 V
Drain to Source Voltage (Vdss): 1700 V
Produkt ist nicht verfügbar
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SCT2H12NYTB datasheet?p=SCT2H12NY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT2H12NYTB
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1700V 4A TO268
Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 18 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +22V, -6V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-268
Vgs(th) (Max) @ Id: 4V @ 410µA
Power Dissipation (Max): 44W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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ROHM-STEPMO_EVK_20E STEPMO_EVK_20x_Manual_REV1.3.pdf
ROHM-STEPMO_EVK_20E
Hersteller: Rohm Semiconductor
Description: BD63876 STEPMOTOR DRVR SHIELD
Packaging: Bulk
Function: Motor Controller/Driver, Stepper
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BD63876EFV
Platform: Arduino
Part Status: Obsolete
Produkt ist nicht verfügbar
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ROHM-760308MP-EVK-001 BD57015GWL.pdf
ROHM-760308MP-EVK-001
Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BD57015 BD57020
Packaging: Bulk
Function: Wireless Power Supply/Charging
Type: Power Management
Contents: Board(s), Power Supply
Utilized IC / Part: BD57015, BD57020, ML610Q772, WE-WPCC
Supplied Contents: Board(s), Power Supply
Primary Attributes: Transmitter and Receiver
Secondary Attributes: On-Board LEDs
Part Status: Obsolete
Produkt ist nicht verfügbar
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SENSORSHIELD-EVK-001 ROHMSensorBoard_Manual_EN.pdf
Hersteller: Rohm Semiconductor
Description: MULTIPLE SENSOR SHIELD V1
Packaging: Bulk
Function: Multiple
Type: Sensor
Contents: Board(s)
Utilized IC / Part: BD1020, BD7411, BH1745, BM1383, BM1422, RPR-0521
Platform: SensorShield
Part Status: Obsolete
Produkt ist nicht verfügbar
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BA5912BFP-E2 BA5912BFP.pdf
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 4.5-13.2V HSOP25
Packaging: Tape & Reel (TR)
Function: Driver - Fully Integrated, Control and Power Stage
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 13.2V
Applications: General Purpose
Voltage - Load: 4.5V ~ 13.2V
Motor Type - AC, DC: Brushed DC
Produkt ist nicht verfügbar
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BU9450KV-E2
Hersteller: Rohm Semiconductor
Description: IC USB HOST MP3 DECODER VQFP
Produkt ist nicht verfügbar
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RSS090P03FU7TB rss090p03.pdf
RSS090P03FU7TB
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 9A 8SOIC
Produkt ist nicht verfügbar
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SMR003RXF smr.pdf
Hersteller: Rohm Semiconductor
Description: RES SMD 1% 0.02W 010005
Produkt ist nicht verfügbar
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BH1790GLC-E2 datasheet?p=BH1790GLC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BH1790GLC-E2
Hersteller: Rohm Semiconductor
Description: SENSOR OXIMETER/HEART RATE I2C
Packaging: Tape & Reel (TR)
Output Type: I2C
Operating Temperature: -20°C ~ 85°C
Sensor Type: Oximeter/Heart Rate
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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BH1790GLC-EVK-001 bh1790glc-software-manual-e.pdf
BH1790GLC-EVK-001
Hersteller: Rohm Semiconductor
Description: BH1790 SENSORSHIELD BOARD
Packaging: Bulk
Function: Heart Rate
Type: Sensor
Contents: Board(s)
Utilized IC / Part: BH1790
Platform: SensorShield
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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