Suchergebnisse für "4n80" : > 60

Wählen Sie Seite:   1 2  [ Nächste Seite >> ]
Art der Ansicht :
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ABM14N-80.0000MHZ-8-N1V ABM14N-80.0000MHZ-8-N1V ABRACON ABM14N.pdf Crystals MHz Crystal 1008 4-SMD 80MHz +/-12ppm -30C - 85C
auf Bestellung 799 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.01 EUR
10+2.59 EUR
50+2.32 EUR
100+2.24 EUR
250+2.06 EUR
500+2.01 EUR
1000+1.94 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ABM14N-80.0000MHZ-8-N1V ABM14N-80.0000MHZ-8-N1V Abracon LLC ABM14N.pdf Description: CRYSTAL 80MHZ 8PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.039" L x 0.031" W (1.00mm x 0.80mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (1x.80)
Height - Seated (Max): 0.012" (0.30mm)
ESR (Equivalent Series Resistance): 30 Ohms
Frequency: 80 MHz
auf Bestellung 895 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.85 EUR
10+2.49 EUR
25+2.35 EUR
50+2.25 EUR
100+2.16 EUR
250+2.04 EUR
500+1.96 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
FMUN4N80-H FMUN4N80-H Formosa Microsemi Co., Ltd. FMUN4N80-H_REV_A.pdf Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3.8Ohm @ 2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.16 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
FQB4N80TM FQB4N80TM onsemi fqi4n80-d.pdf Description: MOSFET N-CH 800V 3.9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.95A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.46 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
FQB4N80TM FQB4N80TM onsemi / Fairchild 97B1B4037C5B80B870EBB4FF748F328217CCD45148863D9C96C10ED542E0363C.pdf MOSFETs 800V N-Channel QFET
auf Bestellung 1549 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.6 EUR
10+2.09 EUR
100+1.74 EUR
500+1.66 EUR
800+1.45 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FQB4N80TM FQB4N80TM onsemi fqi4n80-d.pdf Description: MOSFET N-CH 800V 3.9A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.95A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
auf Bestellung 833 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.64 EUR
10+2.12 EUR
100+1.77 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
FQI4N80TU FQI4N80TU Fairchild Semiconductor FAIRS46000-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 3.9A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.95A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
auf Bestellung 1264 Stücke:
Lieferzeit 10-14 Tag (e)
195+2.32 EUR
Mindestbestellmenge: 195
Im Einkaufswagen  Stück im Wert von  UAH
FQP4N80 FQP4N80 ONSEMI fqp4n80-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
9+7.95 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
FQP4N80 FQP4N80 ONSEMI fqp4n80-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
9+7.95 EUR
10+7.15 EUR
50+1.43 EUR
250+1.3 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
FQPF4N80 FQPF4N80 Fairchild Semiconductor FAIRS09674-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 2.2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
auf Bestellung 334 Stücke:
Lieferzeit 10-14 Tag (e)
226+2.01 EUR
Mindestbestellmenge: 226
Im Einkaufswagen  Stück im Wert von  UAH
IXFH14N80P IXFH14N80P IXYS littelfuse-discrete-mosfets-ixf-14n80p-datasheet?assetguid=295cb4f7-ab84-42cd-94fb-12395b127fd1 Description: MOSFET N-CH 800V 14A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 500mA, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
auf Bestellung 528 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.57 EUR
30+7.96 EUR
120+6.72 EUR
510+6.04 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFH24N80P IXFH24N80P IXYS Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXFH24N80P_Datasheet.PDF MOSFETs DIODE Id24 BVdass800
auf Bestellung 962 Stücke:
Lieferzeit 10-14 Tag (e)
1+16.91 EUR
10+12.02 EUR
120+11.95 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFH24N80P IXFH24N80P IXYS IXFH24N80P.pdf Description: MOSFET N-CH 800V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 12A, 10V
Power Dissipation (Max): 650W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
auf Bestellung 608 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.73 EUR
30+11.94 EUR
120+10.24 EUR
510+9.86 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFK24N80P IXFK24N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+35.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFK24N80P IXFK24N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
2+35.75 EUR
3+23.84 EUR
10+11.24 EUR
25+10.11 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFK44N80P IXFK44N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D55A88536A9820&compId=IXFK(X)44N80P.pdf?ci_sign=fe7a22c35d7909b220aeebf7fe0c0b6a1d419d2d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)
4+21.04 EUR
5+20.06 EUR
10+18.9 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFK44N80P IXFK44N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D55A88536A9820&compId=IXFK(X)44N80P.pdf?ci_sign=fe7a22c35d7909b220aeebf7fe0c0b6a1d419d2d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 255 Stücke:
Lieferzeit 7-14 Tag (e)
4+21.04 EUR
5+20.06 EUR
10+18.9 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFK44N80P IXFK44N80P IXYS littelfuse-discrete-mosfets-ixf-44n80p-datasheet?assetguid=0308fa86-41d8-447d-92c9-57e0fcffa0ce Description: MOSFET N-CH 800V 44A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 22A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
auf Bestellung 194 Stücke:
Lieferzeit 10-14 Tag (e)
1+33.7 EUR
25+21.81 EUR
100+19.63 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFK44N80P IXFK44N80P IXYS Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_44N80P_Datasheet.PDF MOSFETs 44 Amps 800V
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
1+33.16 EUR
10+23.8 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFK44N80Q3 IXFK44N80Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D555DA4D32F820&compId=IXFK(X)44N80Q3.pdf?ci_sign=dd049728423ed64df76c419a8fd12eba8ab2dd10 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
4+19.3 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFK44N80Q3 IXFK44N80Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D555DA4D32F820&compId=IXFK(X)44N80Q3.pdf?ci_sign=dd049728423ed64df76c419a8fd12eba8ab2dd10 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
4+19.3 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFN44N80P IXFN44N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C9A3C8EBA98BF&compId=IXFN44N80P.pdf?ci_sign=e5454b9129ad828efae0eebe210c810d51dfce0d description Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 39A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.19Ω
Pulsed drain current: 100A
Power dissipation: 694W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 200nC
Kind of channel: enhancement
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
2+43.41 EUR
3+38.38 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFN44N80P IXFN44N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C9A3C8EBA98BF&compId=IXFN44N80P.pdf?ci_sign=e5454b9129ad828efae0eebe210c810d51dfce0d description Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 39A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.19Ω
Pulsed drain current: 100A
Power dissipation: 694W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 200nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
2+43.41 EUR
3+38.38 EUR
10+34.48 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFN44N80P IXFN44N80P IXYS Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXFN44N80P_Datasheet.PDF description MOSFET Modules 36 Amps 800V
auf Bestellung 157 Stücke:
Lieferzeit 10-14 Tag (e)
1+50.41 EUR
10+39.37 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFN44N80P IXFN44N80P IXYS IXFN44N80P.pdf description Description: MOSFET N-CH 800V 39A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 500mA, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
auf Bestellung 147 Stücke:
Lieferzeit 10-14 Tag (e)
1+50.25 EUR
10+37.09 EUR
100+32.49 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFR24N80P IXFR24N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2857DA3FF1A1820&compId=IXFR24N80P.pdf?ci_sign=873856e0e863a27e19dde25c672bc74899b0f721 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.41 EUR
6+12.93 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXFR24N80P IXFR24N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2857DA3FF1A1820&compId=IXFR24N80P.pdf?ci_sign=873856e0e863a27e19dde25c672bc74899b0f721 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
5+14.41 EUR
6+12.93 EUR
10+11.43 EUR
30+10.27 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXFR44N80P IXFR44N80P IXYS DS99504EIXFR44N80P.pdf Description: MOSFET N-CH 800V 25A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 22A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
1+35.59 EUR
30+22.69 EUR
120+21.03 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFX44N80P IXFX44N80P IXYS littelfuse-discrete-mosfets-ixf-44n80p-datasheet?assetguid=0308fa86-41d8-447d-92c9-57e0fcffa0ce Description: MOSFET N-CH 800V 44A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 22A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
auf Bestellung 280 Stücke:
Lieferzeit 10-14 Tag (e)
1+33.63 EUR
30+21.33 EUR
120+19.57 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFX44N80P IXFX44N80P IXYS Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_44N80P_Datasheet.PDF MOSFETs 44 Amps 800V
auf Bestellung 276 Stücke:
Lieferzeit 10-14 Tag (e)
1+33.6 EUR
10+25.12 EUR
120+23.72 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTP4N80P IXTP4N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4FAF0DE3BB820&compId=IXTA(P)4N80P.pdf?ci_sign=a56c5fce943e27469917e977e7f679ed743afc7d Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 560ns
Features of semiconductor devices: standard power mosfet
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.11 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IXTP4N80P IXTP4N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4FAF0DE3BB820&compId=IXTA(P)4N80P.pdf?ci_sign=a56c5fce943e27469917e977e7f679ed743afc7d Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 560ns
Features of semiconductor devices: standard power mosfet
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
14+5.11 EUR
50+1.94 EUR
250+1.82 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IXTP4N80P IXTP4N80P IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Standard_IXT_4N80P_Datasheet.PDF MOSFETs 3.5 Amps 800V 3 Rds
auf Bestellung 355 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.26 EUR
10+3.03 EUR
100+2.75 EUR
500+2.11 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTP4N80P IXTP4N80P IXYS Smart%20Building%20Application%20Guide.pdf Description: MOSFET N-CH 800V 3.6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
auf Bestellung 1050 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.15 EUR
50+2.7 EUR
100+2.42 EUR
500+1.99 EUR
1000+1.82 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
MSJU04N80A-TP MSJU04N80A-TP MCC (Micro Commercial Components) MSJU04N80A(DPAK).pdf Description: N-CHANNEL MOSFET,DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Power Dissipation (Max): 88W (Tj)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 396 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.04 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
MSJU04N80A-TP MSJU04N80A-TP MCC (Micro Commercial Components) MSJU04N80A(DPAK).pdf Description: N-CHANNEL MOSFET,DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Power Dissipation (Max): 88W (Tj)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 396 pF @ 100 V
auf Bestellung 4672 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.56 EUR
10+2.29 EUR
100+1.56 EUR
500+1.25 EUR
1000+1.22 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SIHA24N80AE-GE3 SIHA24N80AE-GE3 Vishay / Siliconix siha24n80ae.pdf MOSFETs N-CHANNEL 800V E Series Pwr MOSFET
auf Bestellung 705 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.64 EUR
10+2.75 EUR
500+2.59 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHA24N80AE-GE3 SIHA24N80AE-GE3 Vishay Siliconix siha24n80ae.pdf Description: MOSFET N-CH 800V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
auf Bestellung 642 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.71 EUR
50+2.78 EUR
100+2.77 EUR
500+2.57 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SIHB24N80AE-GE3 SIHB24N80AE-GE3 Vishay Siliconix sihb24n80ae.pdf Description: MOSFET N-CH 800V 21A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
auf Bestellung 914 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.49 EUR
50+3.18 EUR
100+3.05 EUR
500+2.52 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SIHB24N80AE-GE3 SIHB24N80AE-GE3 Vishay / Siliconix sihb24n80ae.pdf MOSFETs N-CHANNEL 800V E Series Pwr MOSFET
auf Bestellung 373 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.51 EUR
10+3.19 EUR
100+3.06 EUR
500+2.6 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHD4N80E-GE3 SIHD4N80E-GE3 Vishay Siliconix sihd4n80e.pdf Description: MOSFET N-CH 800V 4.3A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 100 V
auf Bestellung 1899 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.89 EUR
10+1.85 EUR
100+1.26 EUR
500+1.21 EUR
1000+1.14 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SIHD4N80E-GE3 SIHD4N80E-GE3 Vishay Semiconductors sihd4n80e.pdf MOSFETs 800V Vds 30V Vgs DPAK (TO-252)
auf Bestellung 1391 Stücke:
Lieferzeit 10-14 Tag (e)
1+2.87 EUR
10+1.85 EUR
100+1.26 EUR
500+1.24 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHG24N80AE-GE3 SIHG24N80AE-GE3 Vishay Siliconix sihg24n80ae.pdf Description: MOSFET N-CH 800V 21A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
auf Bestellung 333 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.04 EUR
25+4.12 EUR
100+3.8 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SIHG24N80AE-GE3 SIHG24N80AE-GE3 Vishay / Siliconix sihg24n80ae.pdf MOSFETs N-CHANNEL 800V E Series Pwr MOSFET
auf Bestellung 638 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.08 EUR
10+4.14 EUR
100+3.82 EUR
500+3.61 EUR
1000+3.06 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHG24N80AEF-GE3 SIHG24N80AEF-GE3 Vishay Siliconix sihg24n80aef.pdf Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1889 pF @ 100 V
auf Bestellung 362 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.76 EUR
10+5.76 EUR
100+4.14 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SIHG24N80AEF-GE3 SIHG24N80AEF-GE3 Vishay / Siliconix sihg24n80aef.pdf MOSFETs TO247 800V 20A N-CH MOSFET
auf Bestellung 1397 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.62 EUR
10+5.77 EUR
100+4.17 EUR
500+4.15 EUR
1000+3.68 EUR
2500+3.52 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHP24N80AE-GE3 SIHP24N80AE-GE3 VISHAY sihp24n80ae.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 51A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 51A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 899 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.95 EUR
22+3.4 EUR
24+3.09 EUR
25+2.92 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
SIHP24N80AE-GE3 SIHP24N80AE-GE3 VISHAY sihp24n80ae.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 51A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 51A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 899 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.95 EUR
22+3.4 EUR
24+3.09 EUR
25+2.92 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
SIHP24N80AE-GE3 SIHP24N80AE-GE3 Vishay / Siliconix sihp24n80ae.pdf MOSFETs N-CHANNEL 800V TO-220AB
auf Bestellung 4185 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.91 EUR
10+4.29 EUR
100+3.04 EUR
500+2.75 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHP24N80AE-GE3 SIHP24N80AE-GE3 Vishay Siliconix sihp24n80ae.pdf Description: MOSFET N-CH 800V 21A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
auf Bestellung 930 Stücke:
Lieferzeit 10-14 Tag (e)
3+5.9 EUR
10+4.29 EUR
100+3.03 EUR
500+2.49 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SIHP24N80AEF-GE3 SIHP24N80AEF-GE3 VISHAY sihp24n80aef.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 46A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Pulsed drain current: 46A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.195Ω
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 409 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.83 EUR
21+3.52 EUR
25+2.96 EUR
26+2.79 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
SIHP24N80AEF-GE3 SIHP24N80AEF-GE3 VISHAY sihp24n80aef.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 46A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Pulsed drain current: 46A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.195Ω
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 409 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.83 EUR
21+3.52 EUR
25+2.96 EUR
26+2.79 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
SIHP24N80AEF-GE3 SIHP24N80AEF-GE3 Vishay Siliconix sihp24n80aef.pdf Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1889 pF @ 100 V
auf Bestellung 640 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.72 EUR
10+3.82 EUR
100+3.03 EUR
500+2.96 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SIHP24N80AEF-GE3 SIHP24N80AEF-GE3 Vishay / Siliconix sihp24n80aef.pdf MOSFETs TO220 800V 20A N-CH MOSFET
auf Bestellung 1568 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.74 EUR
10+3.84 EUR
100+3.04 EUR
500+2.97 EUR
2000+2.89 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHP4N80E-BE3 SIHP4N80E-BE3 Vishay Siliconix sihp4n80e.pdf Description: N-CHANNEL 600V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 100 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.77 EUR
10+2.06 EUR
100+1.69 EUR
500+1.55 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SIHP4N80E-BE3 SIHP4N80E-BE3 Vishay / Siliconix sihp4n80e.pdf MOSFETs TO220 800V 4.3A N-CH MOSFET
auf Bestellung 25613 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.78 EUR
10+1.78 EUR
100+1.57 EUR
500+1.48 EUR
1000+1.32 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHU4N80AE-GE3 SIHU4N80AE-GE3 Vishay Semiconductors tf-sihu4n80ae-ge3.pdf MOSFETs Nch 800V Vds 30V Vgs TO-251
auf Bestellung 2920 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.68 EUR
10+1.92 EUR
100+1.42 EUR
500+1.13 EUR
1000+1.04 EUR
3000+1.03 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIHU4N80AE-GE3 SIHU4N80AE-GE3 Vishay Siliconix tf-sihu4n80ae-ge3.pdf Description: MOSFET N-CH 800V 4.3A IPAK
Packaging: Tube
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 100 V
auf Bestellung 2994 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.68 EUR
10+1.91 EUR
100+1.41 EUR
500+1.13 EUR
1000+1.03 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SPD04N80C3ATMA1 SPD04N80C3ATMA1 Infineon Technologies Infineon-SPD04N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1a316bac1952 Description: MOSFET N-CH 800V 4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.93 EUR
5000+0.91 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
SPD04N80C3ATMA1 SPD04N80C3ATMA1 Infineon Technologies Infineon-SPD04N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1a316bac1952 Description: MOSFET N-CH 800V 4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
auf Bestellung 9124 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.36 EUR
16+1.13 EUR
100+1.08 EUR
500+1.06 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
ABM14N-80.0000MHZ-8-N1V ABM14N.pdf
ABM14N-80.0000MHZ-8-N1V
Hersteller: ABRACON
Crystals MHz Crystal 1008 4-SMD 80MHz +/-12ppm -30C - 85C
auf Bestellung 799 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.01 EUR
10+2.59 EUR
50+2.32 EUR
100+2.24 EUR
250+2.06 EUR
500+2.01 EUR
1000+1.94 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ABM14N-80.0000MHZ-8-N1V ABM14N.pdf
ABM14N-80.0000MHZ-8-N1V
Hersteller: Abracon LLC
Description: CRYSTAL 80MHZ 8PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.039" L x 0.031" W (1.00mm x 0.80mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (1x.80)
Height - Seated (Max): 0.012" (0.30mm)
ESR (Equivalent Series Resistance): 30 Ohms
Frequency: 80 MHz
auf Bestellung 895 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.85 EUR
10+2.49 EUR
25+2.35 EUR
50+2.25 EUR
100+2.16 EUR
250+2.04 EUR
500+1.96 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
FMUN4N80-H FMUN4N80-H_REV_A.pdf
FMUN4N80-H
Hersteller: Formosa Microsemi Co., Ltd.
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3.8Ohm @ 2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.16 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
FQB4N80TM fqi4n80-d.pdf
FQB4N80TM
Hersteller: onsemi
Description: MOSFET N-CH 800V 3.9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.95A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.46 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
FQB4N80TM 97B1B4037C5B80B870EBB4FF748F328217CCD45148863D9C96C10ED542E0363C.pdf
FQB4N80TM
Hersteller: onsemi / Fairchild
MOSFETs 800V N-Channel QFET
auf Bestellung 1549 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.6 EUR
10+2.09 EUR
100+1.74 EUR
500+1.66 EUR
800+1.45 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FQB4N80TM fqi4n80-d.pdf
FQB4N80TM
Hersteller: onsemi
Description: MOSFET N-CH 800V 3.9A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.95A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
auf Bestellung 833 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.64 EUR
10+2.12 EUR
100+1.77 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
FQI4N80TU FAIRS46000-1.pdf?t.download=true&u=5oefqw
FQI4N80TU
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 800V 3.9A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.95A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
auf Bestellung 1264 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
195+2.32 EUR
Mindestbestellmenge: 195
Im Einkaufswagen  Stück im Wert von  UAH
FQP4N80 fqp4n80-d.pdf
FQP4N80
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
FQP4N80 fqp4n80-d.pdf
FQP4N80
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
9+7.95 EUR
10+7.15 EUR
50+1.43 EUR
250+1.3 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
FQPF4N80 FAIRS09674-1.pdf?t.download=true&u=5oefqw
FQPF4N80
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 800V 2.2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
auf Bestellung 334 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
226+2.01 EUR
Mindestbestellmenge: 226
Im Einkaufswagen  Stück im Wert von  UAH
IXFH14N80P littelfuse-discrete-mosfets-ixf-14n80p-datasheet?assetguid=295cb4f7-ab84-42cd-94fb-12395b127fd1
IXFH14N80P
Hersteller: IXYS
Description: MOSFET N-CH 800V 14A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 500mA, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
auf Bestellung 528 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.57 EUR
30+7.96 EUR
120+6.72 EUR
510+6.04 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFH24N80P Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXFH24N80P_Datasheet.PDF
IXFH24N80P
Hersteller: IXYS
MOSFETs DIODE Id24 BVdass800
auf Bestellung 962 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+16.91 EUR
10+12.02 EUR
120+11.95 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFH24N80P IXFH24N80P.pdf
IXFH24N80P
Hersteller: IXYS
Description: MOSFET N-CH 800V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 12A, 10V
Power Dissipation (Max): 650W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
auf Bestellung 608 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.73 EUR
30+11.94 EUR
120+10.24 EUR
510+9.86 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFK24N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91
IXFK24N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFK24N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91
IXFK24N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+35.75 EUR
3+23.84 EUR
10+11.24 EUR
25+10.11 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFK44N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D55A88536A9820&compId=IXFK(X)44N80P.pdf?ci_sign=fe7a22c35d7909b220aeebf7fe0c0b6a1d419d2d
IXFK44N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.04 EUR
5+20.06 EUR
10+18.9 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFK44N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D55A88536A9820&compId=IXFK(X)44N80P.pdf?ci_sign=fe7a22c35d7909b220aeebf7fe0c0b6a1d419d2d
IXFK44N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 255 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+21.04 EUR
5+20.06 EUR
10+18.9 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFK44N80P littelfuse-discrete-mosfets-ixf-44n80p-datasheet?assetguid=0308fa86-41d8-447d-92c9-57e0fcffa0ce
IXFK44N80P
Hersteller: IXYS
Description: MOSFET N-CH 800V 44A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 22A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
auf Bestellung 194 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+33.7 EUR
25+21.81 EUR
100+19.63 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFK44N80P Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_44N80P_Datasheet.PDF
IXFK44N80P
Hersteller: IXYS
MOSFETs 44 Amps 800V
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+33.16 EUR
10+23.8 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFK44N80Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D555DA4D32F820&compId=IXFK(X)44N80Q3.pdf?ci_sign=dd049728423ed64df76c419a8fd12eba8ab2dd10
IXFK44N80Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.3 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFK44N80Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D555DA4D32F820&compId=IXFK(X)44N80Q3.pdf?ci_sign=dd049728423ed64df76c419a8fd12eba8ab2dd10
IXFK44N80Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+19.3 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFN44N80P description pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C9A3C8EBA98BF&compId=IXFN44N80P.pdf?ci_sign=e5454b9129ad828efae0eebe210c810d51dfce0d
IXFN44N80P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 39A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.19Ω
Pulsed drain current: 100A
Power dissipation: 694W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 200nC
Kind of channel: enhancement
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+43.41 EUR
3+38.38 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFN44N80P description pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C9A3C8EBA98BF&compId=IXFN44N80P.pdf?ci_sign=e5454b9129ad828efae0eebe210c810d51dfce0d
IXFN44N80P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 39A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.19Ω
Pulsed drain current: 100A
Power dissipation: 694W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 200nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+43.41 EUR
3+38.38 EUR
10+34.48 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFN44N80P description Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXFN44N80P_Datasheet.PDF
IXFN44N80P
Hersteller: IXYS
MOSFET Modules 36 Amps 800V
auf Bestellung 157 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+50.41 EUR
10+39.37 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFN44N80P description IXFN44N80P.pdf
IXFN44N80P
Hersteller: IXYS
Description: MOSFET N-CH 800V 39A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 500mA, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
auf Bestellung 147 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+50.25 EUR
10+37.09 EUR
100+32.49 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFR24N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2857DA3FF1A1820&compId=IXFR24N80P.pdf?ci_sign=873856e0e863a27e19dde25c672bc74899b0f721
IXFR24N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.41 EUR
6+12.93 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXFR24N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2857DA3FF1A1820&compId=IXFR24N80P.pdf?ci_sign=873856e0e863a27e19dde25c672bc74899b0f721
IXFR24N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+14.41 EUR
6+12.93 EUR
10+11.43 EUR
30+10.27 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXFR44N80P DS99504EIXFR44N80P.pdf
IXFR44N80P
Hersteller: IXYS
Description: MOSFET N-CH 800V 25A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 22A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+35.59 EUR
30+22.69 EUR
120+21.03 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFX44N80P littelfuse-discrete-mosfets-ixf-44n80p-datasheet?assetguid=0308fa86-41d8-447d-92c9-57e0fcffa0ce
IXFX44N80P
Hersteller: IXYS
Description: MOSFET N-CH 800V 44A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 22A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
auf Bestellung 280 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+33.63 EUR
30+21.33 EUR
120+19.57 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFX44N80P Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_44N80P_Datasheet.PDF
IXFX44N80P
Hersteller: IXYS
MOSFETs 44 Amps 800V
auf Bestellung 276 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+33.6 EUR
10+25.12 EUR
120+23.72 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTP4N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4FAF0DE3BB820&compId=IXTA(P)4N80P.pdf?ci_sign=a56c5fce943e27469917e977e7f679ed743afc7d
IXTP4N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 560ns
Features of semiconductor devices: standard power mosfet
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.11 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IXTP4N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4FAF0DE3BB820&compId=IXTA(P)4N80P.pdf?ci_sign=a56c5fce943e27469917e977e7f679ed743afc7d
IXTP4N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 560ns
Features of semiconductor devices: standard power mosfet
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
14+5.11 EUR
50+1.94 EUR
250+1.82 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IXTP4N80P Littelfuse_Discrete_MOSFETs_N_Channel_Standard_IXT_4N80P_Datasheet.PDF
IXTP4N80P
Hersteller: IXYS
MOSFETs 3.5 Amps 800V 3 Rds
auf Bestellung 355 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.26 EUR
10+3.03 EUR
100+2.75 EUR
500+2.11 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTP4N80P Smart%20Building%20Application%20Guide.pdf
IXTP4N80P
Hersteller: IXYS
Description: MOSFET N-CH 800V 3.6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
auf Bestellung 1050 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.15 EUR
50+2.7 EUR
100+2.42 EUR
500+1.99 EUR
1000+1.82 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
MSJU04N80A-TP MSJU04N80A(DPAK).pdf
MSJU04N80A-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Power Dissipation (Max): 88W (Tj)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 396 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.04 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
MSJU04N80A-TP MSJU04N80A(DPAK).pdf
MSJU04N80A-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Power Dissipation (Max): 88W (Tj)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 396 pF @ 100 V
auf Bestellung 4672 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.56 EUR
10+2.29 EUR
100+1.56 EUR
500+1.25 EUR
1000+1.22 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SIHA24N80AE-GE3 siha24n80ae.pdf
SIHA24N80AE-GE3
Hersteller: Vishay / Siliconix
MOSFETs N-CHANNEL 800V E Series Pwr MOSFET
auf Bestellung 705 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.64 EUR
10+2.75 EUR
500+2.59 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHA24N80AE-GE3 siha24n80ae.pdf
SIHA24N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
auf Bestellung 642 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.71 EUR
50+2.78 EUR
100+2.77 EUR
500+2.57 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SIHB24N80AE-GE3 sihb24n80ae.pdf
SIHB24N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 21A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
auf Bestellung 914 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.49 EUR
50+3.18 EUR
100+3.05 EUR
500+2.52 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SIHB24N80AE-GE3 sihb24n80ae.pdf
SIHB24N80AE-GE3
Hersteller: Vishay / Siliconix
MOSFETs N-CHANNEL 800V E Series Pwr MOSFET
auf Bestellung 373 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.51 EUR
10+3.19 EUR
100+3.06 EUR
500+2.6 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHD4N80E-GE3 sihd4n80e.pdf
SIHD4N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 4.3A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 100 V
auf Bestellung 1899 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.89 EUR
10+1.85 EUR
100+1.26 EUR
500+1.21 EUR
1000+1.14 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SIHD4N80E-GE3 sihd4n80e.pdf
SIHD4N80E-GE3
Hersteller: Vishay Semiconductors
MOSFETs 800V Vds 30V Vgs DPAK (TO-252)
auf Bestellung 1391 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.87 EUR
10+1.85 EUR
100+1.26 EUR
500+1.24 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHG24N80AE-GE3 sihg24n80ae.pdf
SIHG24N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 21A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
auf Bestellung 333 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.04 EUR
25+4.12 EUR
100+3.8 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SIHG24N80AE-GE3 sihg24n80ae.pdf
SIHG24N80AE-GE3
Hersteller: Vishay / Siliconix
MOSFETs N-CHANNEL 800V E Series Pwr MOSFET
auf Bestellung 638 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.08 EUR
10+4.14 EUR
100+3.82 EUR
500+3.61 EUR
1000+3.06 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHG24N80AEF-GE3 sihg24n80aef.pdf
SIHG24N80AEF-GE3
Hersteller: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1889 pF @ 100 V
auf Bestellung 362 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.76 EUR
10+5.76 EUR
100+4.14 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SIHG24N80AEF-GE3 sihg24n80aef.pdf
SIHG24N80AEF-GE3
Hersteller: Vishay / Siliconix
MOSFETs TO247 800V 20A N-CH MOSFET
auf Bestellung 1397 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.62 EUR
10+5.77 EUR
100+4.17 EUR
500+4.15 EUR
1000+3.68 EUR
2500+3.52 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHP24N80AE-GE3 sihp24n80ae.pdf
SIHP24N80AE-GE3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 51A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 51A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 899 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.95 EUR
22+3.4 EUR
24+3.09 EUR
25+2.92 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
SIHP24N80AE-GE3 sihp24n80ae.pdf
SIHP24N80AE-GE3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 51A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 51A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 899 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
19+3.95 EUR
22+3.4 EUR
24+3.09 EUR
25+2.92 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
SIHP24N80AE-GE3 sihp24n80ae.pdf
SIHP24N80AE-GE3
Hersteller: Vishay / Siliconix
MOSFETs N-CHANNEL 800V TO-220AB
auf Bestellung 4185 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.91 EUR
10+4.29 EUR
100+3.04 EUR
500+2.75 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHP24N80AE-GE3 sihp24n80ae.pdf
SIHP24N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 21A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
auf Bestellung 930 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.9 EUR
10+4.29 EUR
100+3.03 EUR
500+2.49 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SIHP24N80AEF-GE3 sihp24n80aef.pdf
SIHP24N80AEF-GE3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 46A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Pulsed drain current: 46A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.195Ω
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 409 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.83 EUR
21+3.52 EUR
25+2.96 EUR
26+2.79 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
SIHP24N80AEF-GE3 sihp24n80aef.pdf
SIHP24N80AEF-GE3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 46A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Pulsed drain current: 46A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.195Ω
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 409 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
19+3.83 EUR
21+3.52 EUR
25+2.96 EUR
26+2.79 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
SIHP24N80AEF-GE3 sihp24n80aef.pdf
SIHP24N80AEF-GE3
Hersteller: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1889 pF @ 100 V
auf Bestellung 640 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.72 EUR
10+3.82 EUR
100+3.03 EUR
500+2.96 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SIHP24N80AEF-GE3 sihp24n80aef.pdf
SIHP24N80AEF-GE3
Hersteller: Vishay / Siliconix
MOSFETs TO220 800V 20A N-CH MOSFET
auf Bestellung 1568 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.74 EUR
10+3.84 EUR
100+3.04 EUR
500+2.97 EUR
2000+2.89 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHP4N80E-BE3 sihp4n80e.pdf
SIHP4N80E-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 100 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.77 EUR
10+2.06 EUR
100+1.69 EUR
500+1.55 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SIHP4N80E-BE3 sihp4n80e.pdf
SIHP4N80E-BE3
Hersteller: Vishay / Siliconix
MOSFETs TO220 800V 4.3A N-CH MOSFET
auf Bestellung 25613 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.78 EUR
10+1.78 EUR
100+1.57 EUR
500+1.48 EUR
1000+1.32 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHU4N80AE-GE3 tf-sihu4n80ae-ge3.pdf
SIHU4N80AE-GE3
Hersteller: Vishay Semiconductors
MOSFETs Nch 800V Vds 30V Vgs TO-251
auf Bestellung 2920 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.68 EUR
10+1.92 EUR
100+1.42 EUR
500+1.13 EUR
1000+1.04 EUR
3000+1.03 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIHU4N80AE-GE3 tf-sihu4n80ae-ge3.pdf
SIHU4N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 4.3A IPAK
Packaging: Tube
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 100 V
auf Bestellung 2994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.68 EUR
10+1.91 EUR
100+1.41 EUR
500+1.13 EUR
1000+1.03 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SPD04N80C3ATMA1 Infineon-SPD04N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1a316bac1952
SPD04N80C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.93 EUR
5000+0.91 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
SPD04N80C3ATMA1 Infineon-SPD04N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1a316bac1952
SPD04N80C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
auf Bestellung 9124 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.36 EUR
16+1.13 EUR
100+1.08 EUR
500+1.06 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   1 2  [ Nächste Seite >> ]