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STP60NF06 STP60NF06
Produktcode: 2993
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ST STP60NF06.pdf description Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 60
Idd,A: 60
Rds(on), Ohm: 0.014
Ciss, pF/Qg, nC: 1800/49
JHGF: THT
ZCODE: 8541290010
auf Bestellung 260 Stück:
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10+0.67 EUR
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STP60NF06L STP60NF06L
Produktcode: 105102
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ST stp60nf06l.pdf Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 60 V
Idd,A: 60 A
Rds(on), Ohm: 0,012 Ohm
Ciss, pF/Qg, nC: 2000/35
JHGF: THT
ZCODE: 8541290010
auf Bestellung 69 Stück:
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P60N02LDG
auf Bestellung 23290 Stücke:
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P60N03LD
auf Bestellung 2000 Stücke:
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P60N03LDG NIKO 09+
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P60N03LR
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P60N06 ST TO-220 03+
auf Bestellung 20000 Stücke:
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P60N06 IR 09+
auf Bestellung 5030 Stücke:
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P60NE03L-10 ST
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P60NE06
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P60NE06L-16
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P60NF03 ST 05+
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P60NF03L ST 05+
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P60NF06 ST 09+
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P60NF06FP
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P60NF06L ST TO220 03+
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B222P-60NF Eaton - Bussmann Electrical Division skuPage.B222P-60NF.pdf Description: 60A NON-FUSIBLE PULLOUT DEVICE
Packaging: Bulk
For Use With/Related Products: Circuit Breakers
Accessory Type: Cover
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1+71.61 EUR
5+59.41 EUR
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EJP60N100 EJP60N100 ETEK MICROELECTRONICS b32b8afedec4fc66183f0a6a29224142.pdf Description: 60V N-Channel Trench Power MOSFE
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A
Supplier Device Package: 8-SOP
Vgs (Max): ±20V
auf Bestellung 10000 Stücke:
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34+0.53 EUR
36+0.5 EUR
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EJP60NP930 EJP60NP930 ETEK MICROELECTRONICS aa2303b9450f7f7493621ef8ef3dcab2.pdf Description: 60V N&P-Channel Trench Power MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-SOP
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel
Operating Temperature: -40°C ~ 85°C (TA)
Drain to Source Voltage (Vdss): 65V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 1mA
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IRG8P60N120KD-EPBF IRG8P60N120KD-EPBF International Rectifier IRSD-S-A0000034003-1.pdf?t.download=true&u=5oefqw Description: IGBT 1200V 100A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 210 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/240ns
Switching Energy: 2.8mJ (on), 2.3mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 345 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 420 W
auf Bestellung 8826 Stücke:
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IXFP60N25X3 IXFP60N25X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48077B3DDB820&compId=IXFA(P%2CQ)60N25X3.pdf?ci_sign=40bf31d6f48e6a29413d60f94152aaab04d45448 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
auf Bestellung 300 Stücke:
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8+10.18 EUR
10+7.19 EUR
11+6.81 EUR
100+6.55 EUR
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IXFP60N25X3 IXFP60N25X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48077B3DDB820&compId=IXFA(P%2CQ)60N25X3.pdf?ci_sign=40bf31d6f48e6a29413d60f94152aaab04d45448 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 300 Stücke:
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10+7.19 EUR
11+6.81 EUR
100+6.55 EUR
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IXFP60N25X3 IXFP60N25X3 IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Ultra_Junction_IXF_60N25X3_Datasheet.PDF MOSFETs 250V/60A Ultra Junct ion X3-Class MOSFET
auf Bestellung 259 Stücke:
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1+13.92 EUR
10+8.98 EUR
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IXFP60N25X3M IXFP60N25X3M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6A59820&compId=IXFP60N25X3M.pdf?ci_sign=313b25dbeb5aa4d0c3060d4a0514a7fa0f1de198 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
auf Bestellung 23 Stücke:
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11+6.72 EUR
12+6.36 EUR
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IXFP60N25X3M IXFP60N25X3M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6A59820&compId=IXFP60N25X3M.pdf?ci_sign=313b25dbeb5aa4d0c3060d4a0514a7fa0f1de198 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
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IXFP60N25X3M IXFP60N25X3M IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Ultra_Junction_IXFP60N25X3M_Datasheet.PDF MOSFETs 250V/60A Ultra Junct ion X3-Class MOSFET
auf Bestellung 216 Stücke:
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1+12.6 EUR
10+7.67 EUR
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IXFP60N25X3M IXFP60N25X3M IXYS littelfuse-discrete-mosfets-ixf-60n25x3-datasheet?assetguid=27d3d003-ebe6-4c6c-ad92-c705963c1606 Description: MOSFET N-CH 250V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220AB (IXFP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V
auf Bestellung 191 Stücke:
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2+14.06 EUR
50+7.38 EUR
100+7.13 EUR
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IXTP60N10T IXTP60N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49165695D1820&compId=IXTA(P)60N10T.pdf?ci_sign=92e4c232650cb3131af7dac4c451a83cc9058951 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 176W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 49nC
Reverse recovery time: 59ns
auf Bestellung 286 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.79 EUR
40+1.8 EUR
43+1.7 EUR
50+1.63 EUR
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IXTP60N10T IXTP60N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49165695D1820&compId=IXTA(P)60N10T.pdf?ci_sign=92e4c232650cb3131af7dac4c451a83cc9058951 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 176W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 49nC
Reverse recovery time: 59ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 286 Stücke:
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40+1.8 EUR
43+1.7 EUR
50+1.63 EUR
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IXTP60N10T IXTP60N10T IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Trench_Gate_IXT_60N10T_Datasheet.PDF MOSFETs MOSFET Id60 BVdass100
auf Bestellung 40 Stücke:
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1+3.71 EUR
10+2.02 EUR
100+1.94 EUR
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IXTP60N10T IXTP60N10T IXYS littelfuse-discrete-mosfets-ixt-60n10t-datasheet?assetguid=9c28d11f-bd7e-4749-b9d5-f5d766cb0615 Description: MOSFET N-CH 100V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
auf Bestellung 35 Stücke:
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5+3.77 EUR
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IXTP60N20T IXTP60N20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4862938A7D820&compId=IXTA(P%2CQ)60N20T.pdf?ci_sign=66a1292f8361c5aa10783640b65094bdcfe97631 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 73nC
Reverse recovery time: 118ns
auf Bestellung 212 Stücke:
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11+6.91 EUR
15+4.93 EUR
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IXTP60N20T IXTP60N20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4862938A7D820&compId=IXTA(P%2CQ)60N20T.pdf?ci_sign=66a1292f8361c5aa10783640b65094bdcfe97631 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 73nC
Reverse recovery time: 118ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 212 Stücke:
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IXTP60N20T IXTP60N20T IXYS littelfuse-discrete-mosfets-ixt-60n20t-datasheet?assetguid=a2bc6b7d-dab8-4007-9c70-5b1fc95634b1 Description: MOSFET N-CH 200V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
auf Bestellung 198 Stücke:
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50+4.97 EUR
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IXTP60N20T IXTP60N20T IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Trench_Gate_IXT_60N20T_Datasheet.PDF MOSFETs Trench POWER MOSFETs 200v, 60A
auf Bestellung 89 Stücke:
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1+9.2 EUR
10+5.21 EUR
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IXTP60N20X4 IXTP60N20X4 IXYS littelfuse_discrete_mosfets_n_channel_ultra_junction_ixtp60n20x4_datasheet.pdf MOSFETs 200V, 60A current capacity, Ultra junction X4, TO-220 package, MOSFET
auf Bestellung 290 Stücke:
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1+15.82 EUR
10+9.54 EUR
100+9.29 EUR
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IXTP60N20X4 IXTP60N20X4 IXYS IXTP60N20X4_DS.pdf Description: MOSFET ULTRA X4 200V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 30A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220 (IXTP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
auf Bestellung 20 Stücke:
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2+16.98 EUR
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IXYP60N65A5 IXYP60N65A5 IXYS IXYP60N65A5.pdf Description: IGBT PT 650V 134A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 36A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/230ns
Switching Energy: 600µJ (on), 1.45mJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 128 nC
Part Status: Active
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 260 A
Power - Max: 395 W
auf Bestellung 130 Stücke:
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2+9.19 EUR
50+4.86 EUR
100+4.44 EUR
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IXYP60N65A5 IXYP60N65A5 IXYS littelfuse_discrete_igbts_xpt_ixyp60n65a5_datasheet.pdf IGBTs XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO220
auf Bestellung 301 Stücke:
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1+8.59 EUR
10+4.89 EUR
100+4.45 EUR
500+3.75 EUR
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LL-HP60NUYC LL-HP60NUYC LUCKYLIGHT pVersion=0046&contRep=ZT&docId=E1C05044751F59F1A6F5005056AB5A8F&compId=ll-hp60nuyc.pdf?ci_sign=b22c182e7eda42281cb642c744f3977645417303 Category: Colour power LEDs - Emiter
Description: Power LED; yellow; STAR; 120°; 590nm; 30÷40lm; 1W
LED colour: yellow
Wavelength: 590nm
Power: 1W
Luminosity: 30...40lm
Viewing angle: 120°
Type of diode: power LED
LED version: STAR
auf Bestellung 18 Stücke:
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18+3.98 EUR
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LL-HP60NUYC LL-HP60NUYC LUCKYLIGHT pVersion=0046&contRep=ZT&docId=E1C05044751F59F1A6F5005056AB5A8F&compId=ll-hp60nuyc.pdf?ci_sign=b22c182e7eda42281cb642c744f3977645417303 Category: Colour power LEDs - Emiter
Description: Power LED; yellow; STAR; 120°; 590nm; 30÷40lm; 1W
LED colour: yellow
Wavelength: 590nm
Power: 1W
Luminosity: 30...40lm
Viewing angle: 120°
Type of diode: power LED
LED version: STAR
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
18+3.98 EUR
21+3.4 EUR
25+2.86 EUR
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LL-HP60NW6EB LL-HP60NW6EB LUCKYLIGHT pVersion=0046&contRep=ZT&docId=E1C0504A748AFCF1A6F5005056AB5A8F&compId=ll-hp60nw6eb.pdf?ci_sign=fe4090aa80466cc10632fc5e4531f7fba33e12bb Category: White power LEDs - Emiter
Description: Power LED; white warm; STAR; 1W; 2600-4000K; 80÷90lm; 120°
LED colour: white warm
Power: 1W
Luminosity: 80...90lm
Viewing angle: 120°
Colour temperature: 2600-4000K
Type of diode: power LED
LED version: STAR
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.69 EUR
19+3.82 EUR
20+3.58 EUR
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LL-HP60NW6EB LL-HP60NW6EB LUCKYLIGHT pVersion=0046&contRep=ZT&docId=E1C0504A748AFCF1A6F5005056AB5A8F&compId=ll-hp60nw6eb.pdf?ci_sign=fe4090aa80466cc10632fc5e4531f7fba33e12bb Category: White power LEDs - Emiter
Description: Power LED; white warm; STAR; 1W; 2600-4000K; 80÷90lm; 120°
LED colour: white warm
Power: 1W
Luminosity: 80...90lm
Viewing angle: 120°
Colour temperature: 2600-4000K
Type of diode: power LED
LED version: STAR
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.69 EUR
19+3.82 EUR
20+3.58 EUR
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LL-HP60NWEB LL-HP60NWEB LUCKYLIGHT pVersion=0046&contRep=ZT&docId=E1C0504A748B03F1A6F5005056AB5A8F&compId=ll-hp60nweb.pdf?ci_sign=5f8baf161f223b6c10a40dd91e2fc0790ea9a194 Category: White power LEDs - Emiter
Description: Power LED; white cold; STAR; 1W; 4000-10000K; 85÷100lm; 120°
LED colour: white cold
Power: 1W
Luminosity: 85...100lm
Viewing angle: 120°
Colour temperature: 4000-10000K
Type of diode: power LED
LED version: STAR
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.39 EUR
20+3.65 EUR
28+2.65 EUR
29+2.5 EUR
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LL-HP60NWEB LL-HP60NWEB LUCKYLIGHT pVersion=0046&contRep=ZT&docId=E1C0504A748B03F1A6F5005056AB5A8F&compId=ll-hp60nweb.pdf?ci_sign=5f8baf161f223b6c10a40dd91e2fc0790ea9a194 Category: White power LEDs - Emiter
Description: Power LED; white cold; STAR; 1W; 4000-10000K; 85÷100lm; 120°
LED colour: white cold
Power: 1W
Luminosity: 85...100lm
Viewing angle: 120°
Colour temperature: 4000-10000K
Type of diode: power LED
LED version: STAR
Anzahl je Verpackung: 1 Stücke
auf Bestellung 70 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.39 EUR
20+3.65 EUR
28+2.65 EUR
29+2.5 EUR
100+2.46 EUR
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NP60N04ILF-E1-AZ NP60N04ILF-E1-AZ Renesas np60n04hlfnp60n04ilf-data-sheet Description: NP60N04ILF-E1-AZ - SWITCHINGN-CH
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3Z)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
136+3.32 EUR
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NP60N04VDK-E1-AY NP60N04VDK-E1-AY Renesas Electronics Corporation np60n04vdk40-v-60-n-channel-power-mos-fetapplication-automotive?r=499856 Description: POWER TRS2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4156 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.56 EUR
10+2.29 EUR
100+1.56 EUR
500+1.25 EUR
1000+1.15 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
NP60N04VLK-E1-AY NP60N04VLK-E1-AY Renesas Electronics Corporation np60n04vlk40-v-60-n-channel-power-mos-fetapplication-automotive?r=499861 Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2498 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.63 EUR
10+2.33 EUR
100+1.59 EUR
500+1.27 EUR
1000+1.25 EUR
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NP60N04VUK-E1-AY NP60N04VUK-E1-AY Renesas Electronics Corporation np60n04vukmos-field-effect-transistor Description: MOSFET N-CH 40V 60A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4171 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.56 EUR
10+2.29 EUR
100+1.56 EUR
500+1.25 EUR
1000+1.15 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
NP60N055VUK-E1-AY NP60N055VUK-E1-AY Renesas Electronics REN_r07ds0588ej0200-pomosfet_DST_20180524.pdf MOSFETs Nch Power MOSFET 55V 60A 5.5mohm TO-252 / DPAK
auf Bestellung 2390 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.41 EUR
10+2.01 EUR
100+1.56 EUR
500+1.24 EUR
1000+1.15 EUR
2500+1.03 EUR
Mindestbestellmenge: 2
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NP60N055VUK-E1-AY NP60N055VUK-E1-AY Renesas Electronics Corporation np60n055vukmos-field-effect-transistor Description: MOSFET N-CH 55V 60A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.99 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
NP60N055VUK-E1-AY NP60N055VUK-E1-AY Renesas Electronics Corporation np60n055vukmos-field-effect-transistor Description: MOSFET N-CH 55V 60A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7973 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.45 EUR
10+2.05 EUR
100+1.55 EUR
500+1.24 EUR
1000+1.21 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
NP60N06VDK-E1-AY NP60N06VDK-E1-AY Renesas Electronics Corporation np60n06vdk60-v-60-n-channel-power-mos-fet-application-automotive?r=499906 Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5373 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.85 EUR
10+2.2 EUR
100+1.56 EUR
500+1.24 EUR
1000+1.21 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
NP60N06VDK-E1-AY NP60N06VDK-E1-AY Renesas Electronics Corporation np60n06vdk60-v-60-n-channel-power-mos-fet-application-automotive?r=499906 Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.99 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
NP60N06VDK-E1-AY NP60N06VDK-E1-AY Renesas Electronics REN_r07ds1340ej0200-pomosfet_DST_20180524.pdf MOSFETs Nch Power MOSFET 60V 60A 7.9mohm TO-252 / DPAK
auf Bestellung 2553 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.78 EUR
10+2.16 EUR
100+1.56 EUR
250+1.53 EUR
500+1.25 EUR
1000+1.19 EUR
2500+1.03 EUR
Mindestbestellmenge: 2
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NP60N06VLK-E1-AY NP60N06VLK-E1-AY Renesas Electronics Corporation np60n06vlk60-v-60-n-channel-power-mos-fet-application-automotive?r=499911 Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3202 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.6 EUR
10+2.16 EUR
100+1.59 EUR
500+1.27 EUR
1000+1.25 EUR
Mindestbestellmenge: 7
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NP60N06VLK-E1-AY NP60N06VLK-E1-AY Renesas Electronics Corporation np60n06vlk60-v-60-n-channel-power-mos-fet-application-automotive?r=499911 Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.06 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
NP60N06VLK-E1-AY NP60N06VLK-E1-AY Renesas Electronics REN_r07ds1339ej0200-pomosfet_DST_20180524.pdf MOSFETs Nch Power MOSFET 60V 60A 7.9mohm TO-252 / DPAK
auf Bestellung 2452 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.48 EUR
10+2.06 EUR
100+1.61 EUR
250+1.54 EUR
500+1.28 EUR
1000+1.2 EUR
2500+1.06 EUR
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STP60N043DM9 STMicroelectronics stp60n043dm9.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
50+9.4 EUR
Mindestbestellmenge: 50
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STP60N043DM9 STP60N043DM9 STMicroelectronics stp60n043dm9.pdf MOSFETs N-channel 600 V, 38 mOhm typ., 56 A MDmesh DM9 Power MOSFET
auf Bestellung 973 Stücke:
Lieferzeit 10-14 Tag (e)
1+16.35 EUR
10+10.24 EUR
100+9.93 EUR
500+8.5 EUR
1000+8.08 EUR
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STP60NF06
Produktcode: 2993
zu Favoriten hinzufügen Lieblingsprodukt

description STP60NF06.pdf
STP60NF06
Hersteller: ST
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 60
Idd,A: 60
Rds(on), Ohm: 0.014
Ciss, pF/Qg, nC: 1800/49
JHGF: THT
ZCODE: 8541290010
auf Bestellung 260 Stück:
Lieferzeit 21-28 Tag (e)
Anzahl Preis
1+0.7 EUR
10+0.67 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STP60NF06L
Produktcode: 105102
zu Favoriten hinzufügen Lieblingsprodukt

stp60nf06l.pdf
STP60NF06L
Hersteller: ST
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 60 V
Idd,A: 60 A
Rds(on), Ohm: 0,012 Ohm
Ciss, pF/Qg, nC: 2000/35
JHGF: THT
ZCODE: 8541290010
auf Bestellung 69 Stück:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
P60N02LDG
auf Bestellung 23290 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
P60N03LD
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
P60N03LDG
Hersteller: NIKO
09+
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
P60N03LR
auf Bestellung 50000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
P60N06
Hersteller: ST
TO-220 03+
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
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P60N06
Hersteller: IR
09+
auf Bestellung 5030 Stücke:
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P60NE03L-10
Hersteller: ST
auf Bestellung 3150 Stücke:
Lieferzeit 21-28 Tag (e)
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P60NE06
auf Bestellung 3700 Stücke:
Lieferzeit 21-28 Tag (e)
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P60NE06L-16
auf Bestellung 20 Stücke:
Lieferzeit 21-28 Tag (e)
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P60NF03
Hersteller: ST
05+
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
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P60NF03L
Hersteller: ST
05+
auf Bestellung 20000 Stücke:
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P60NF06
Hersteller: ST
09+
auf Bestellung 1018 Stücke:
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P60NF06FP
auf Bestellung 506 Stücke:
Lieferzeit 21-28 Tag (e)
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P60NF06L
Hersteller: ST
TO220 03+
auf Bestellung 44 Stücke:
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B222P-60NF skuPage.B222P-60NF.pdf
Hersteller: Eaton - Bussmann Electrical Division
Description: 60A NON-FUSIBLE PULLOUT DEVICE
Packaging: Bulk
For Use With/Related Products: Circuit Breakers
Accessory Type: Cover
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+71.61 EUR
5+59.41 EUR
10+54.8 EUR
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EJP60N100 b32b8afedec4fc66183f0a6a29224142.pdf
EJP60N100
Hersteller: ETEK MICROELECTRONICS
Description: 60V N-Channel Trench Power MOSFE
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A
Supplier Device Package: 8-SOP
Vgs (Max): ±20V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
36+0.5 EUR
50+0.47 EUR
100+0.44 EUR
1000+0.41 EUR
3000+0.38 EUR
Mindestbestellmenge: 34
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EJP60NP930 aa2303b9450f7f7493621ef8ef3dcab2.pdf
EJP60NP930
Hersteller: ETEK MICROELECTRONICS
Description: 60V N&P-Channel Trench Power MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-SOP
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel
Operating Temperature: -40°C ~ 85°C (TA)
Drain to Source Voltage (Vdss): 65V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 1mA
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
36+0.5 EUR
50+0.47 EUR
100+0.44 EUR
1000+0.41 EUR
3000+0.38 EUR
Mindestbestellmenge: 34
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IRG8P60N120KD-EPBF IRSD-S-A0000034003-1.pdf?t.download=true&u=5oefqw
IRG8P60N120KD-EPBF
Hersteller: International Rectifier
Description: IGBT 1200V 100A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 210 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/240ns
Switching Energy: 2.8mJ (on), 2.3mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 345 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 420 W
auf Bestellung 8826 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+12.83 EUR
Mindestbestellmenge: 35
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IXFP60N25X3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48077B3DDB820&compId=IXFA(P%2CQ)60N25X3.pdf?ci_sign=40bf31d6f48e6a29413d60f94152aaab04d45448
IXFP60N25X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+10.18 EUR
10+7.19 EUR
11+6.81 EUR
100+6.55 EUR
Mindestbestellmenge: 8
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IXFP60N25X3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48077B3DDB820&compId=IXFA(P%2CQ)60N25X3.pdf?ci_sign=40bf31d6f48e6a29413d60f94152aaab04d45448
IXFP60N25X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
8+10.18 EUR
10+7.19 EUR
11+6.81 EUR
100+6.55 EUR
Mindestbestellmenge: 8
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IXFP60N25X3 Littelfuse_Discrete_MOSFETs_N_Channel_Ultra_Junction_IXF_60N25X3_Datasheet.PDF
IXFP60N25X3
Hersteller: IXYS
MOSFETs 250V/60A Ultra Junct ion X3-Class MOSFET
auf Bestellung 259 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+13.92 EUR
10+8.98 EUR
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IXFP60N25X3M pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6A59820&compId=IXFP60N25X3M.pdf?ci_sign=313b25dbeb5aa4d0c3060d4a0514a7fa0f1de198
IXFP60N25X3M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.24 EUR
11+6.72 EUR
12+6.36 EUR
Mindestbestellmenge: 8
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IXFP60N25X3M pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6A59820&compId=IXFP60N25X3M.pdf?ci_sign=313b25dbeb5aa4d0c3060d4a0514a7fa0f1de198
IXFP60N25X3M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
8+9.24 EUR
11+6.72 EUR
12+6.36 EUR
50+6.19 EUR
Mindestbestellmenge: 8
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IXFP60N25X3M Littelfuse_Discrete_MOSFETs_N_Channel_Ultra_Junction_IXFP60N25X3M_Datasheet.PDF
IXFP60N25X3M
Hersteller: IXYS
MOSFETs 250V/60A Ultra Junct ion X3-Class MOSFET
auf Bestellung 216 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+12.6 EUR
10+7.67 EUR
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IXFP60N25X3M littelfuse-discrete-mosfets-ixf-60n25x3-datasheet?assetguid=27d3d003-ebe6-4c6c-ad92-c705963c1606
IXFP60N25X3M
Hersteller: IXYS
Description: MOSFET N-CH 250V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220AB (IXFP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V
auf Bestellung 191 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.06 EUR
50+7.38 EUR
100+7.13 EUR
Mindestbestellmenge: 2
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IXTP60N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49165695D1820&compId=IXTA(P)60N10T.pdf?ci_sign=92e4c232650cb3131af7dac4c451a83cc9058951
IXTP60N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 176W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 49nC
Reverse recovery time: 59ns
auf Bestellung 286 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.79 EUR
40+1.8 EUR
43+1.7 EUR
50+1.63 EUR
Mindestbestellmenge: 26
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IXTP60N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49165695D1820&compId=IXTA(P)60N10T.pdf?ci_sign=92e4c232650cb3131af7dac4c451a83cc9058951
IXTP60N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 176W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 49nC
Reverse recovery time: 59ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 286 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
26+2.79 EUR
40+1.8 EUR
43+1.7 EUR
50+1.63 EUR
Mindestbestellmenge: 26
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IXTP60N10T Littelfuse_Discrete_MOSFETs_N_Channel_Trench_Gate_IXT_60N10T_Datasheet.PDF
IXTP60N10T
Hersteller: IXYS
MOSFETs MOSFET Id60 BVdass100
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.71 EUR
10+2.02 EUR
100+1.94 EUR
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IXTP60N10T littelfuse-discrete-mosfets-ixt-60n10t-datasheet?assetguid=9c28d11f-bd7e-4749-b9d5-f5d766cb0615
IXTP60N10T
Hersteller: IXYS
Description: MOSFET N-CH 100V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.77 EUR
Mindestbestellmenge: 5
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IXTP60N20T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4862938A7D820&compId=IXTA(P%2CQ)60N20T.pdf?ci_sign=66a1292f8361c5aa10783640b65094bdcfe97631
IXTP60N20T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 73nC
Reverse recovery time: 118ns
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.91 EUR
15+4.93 EUR
16+4.66 EUR
50+4.58 EUR
Mindestbestellmenge: 11
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IXTP60N20T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4862938A7D820&compId=IXTA(P%2CQ)60N20T.pdf?ci_sign=66a1292f8361c5aa10783640b65094bdcfe97631
IXTP60N20T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 73nC
Reverse recovery time: 118ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 212 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
11+6.91 EUR
15+4.93 EUR
16+4.66 EUR
50+4.58 EUR
Mindestbestellmenge: 11
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IXTP60N20T littelfuse-discrete-mosfets-ixt-60n20t-datasheet?assetguid=a2bc6b7d-dab8-4007-9c70-5b1fc95634b1
IXTP60N20T
Hersteller: IXYS
Description: MOSFET N-CH 200V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
auf Bestellung 198 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.35 EUR
50+4.97 EUR
100+4.8 EUR
Mindestbestellmenge: 2
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IXTP60N20T Littelfuse_Discrete_MOSFETs_N_Channel_Trench_Gate_IXT_60N20T_Datasheet.PDF
IXTP60N20T
Hersteller: IXYS
MOSFETs Trench POWER MOSFETs 200v, 60A
auf Bestellung 89 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.2 EUR
10+5.21 EUR
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IXTP60N20X4 littelfuse_discrete_mosfets_n_channel_ultra_junction_ixtp60n20x4_datasheet.pdf
IXTP60N20X4
Hersteller: IXYS
MOSFETs 200V, 60A current capacity, Ultra junction X4, TO-220 package, MOSFET
auf Bestellung 290 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+15.82 EUR
10+9.54 EUR
100+9.29 EUR
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IXTP60N20X4 IXTP60N20X4_DS.pdf
IXTP60N20X4
Hersteller: IXYS
Description: MOSFET ULTRA X4 200V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 30A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220 (IXTP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.98 EUR
Mindestbestellmenge: 2
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IXYP60N65A5 IXYP60N65A5.pdf
IXYP60N65A5
Hersteller: IXYS
Description: IGBT PT 650V 134A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 36A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/230ns
Switching Energy: 600µJ (on), 1.45mJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 128 nC
Part Status: Active
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 260 A
Power - Max: 395 W
auf Bestellung 130 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.19 EUR
50+4.86 EUR
100+4.44 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXYP60N65A5 littelfuse_discrete_igbts_xpt_ixyp60n65a5_datasheet.pdf
IXYP60N65A5
Hersteller: IXYS
IGBTs XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO220
auf Bestellung 301 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.59 EUR
10+4.89 EUR
100+4.45 EUR
500+3.75 EUR
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LL-HP60NUYC pVersion=0046&contRep=ZT&docId=E1C05044751F59F1A6F5005056AB5A8F&compId=ll-hp60nuyc.pdf?ci_sign=b22c182e7eda42281cb642c744f3977645417303
LL-HP60NUYC
Hersteller: LUCKYLIGHT
Category: Colour power LEDs - Emiter
Description: Power LED; yellow; STAR; 120°; 590nm; 30÷40lm; 1W
LED colour: yellow
Wavelength: 590nm
Power: 1W
Luminosity: 30...40lm
Viewing angle: 120°
Type of diode: power LED
LED version: STAR
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+3.98 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
LL-HP60NUYC pVersion=0046&contRep=ZT&docId=E1C05044751F59F1A6F5005056AB5A8F&compId=ll-hp60nuyc.pdf?ci_sign=b22c182e7eda42281cb642c744f3977645417303
LL-HP60NUYC
Hersteller: LUCKYLIGHT
Category: Colour power LEDs - Emiter
Description: Power LED; yellow; STAR; 120°; 590nm; 30÷40lm; 1W
LED colour: yellow
Wavelength: 590nm
Power: 1W
Luminosity: 30...40lm
Viewing angle: 120°
Type of diode: power LED
LED version: STAR
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
18+3.98 EUR
21+3.4 EUR
25+2.86 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
LL-HP60NW6EB pVersion=0046&contRep=ZT&docId=E1C0504A748AFCF1A6F5005056AB5A8F&compId=ll-hp60nw6eb.pdf?ci_sign=fe4090aa80466cc10632fc5e4531f7fba33e12bb
LL-HP60NW6EB
Hersteller: LUCKYLIGHT
Category: White power LEDs - Emiter
Description: Power LED; white warm; STAR; 1W; 2600-4000K; 80÷90lm; 120°
LED colour: white warm
Power: 1W
Luminosity: 80...90lm
Viewing angle: 120°
Colour temperature: 2600-4000K
Type of diode: power LED
LED version: STAR
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.69 EUR
19+3.82 EUR
20+3.58 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
LL-HP60NW6EB pVersion=0046&contRep=ZT&docId=E1C0504A748AFCF1A6F5005056AB5A8F&compId=ll-hp60nw6eb.pdf?ci_sign=fe4090aa80466cc10632fc5e4531f7fba33e12bb
LL-HP60NW6EB
Hersteller: LUCKYLIGHT
Category: White power LEDs - Emiter
Description: Power LED; white warm; STAR; 1W; 2600-4000K; 80÷90lm; 120°
LED colour: white warm
Power: 1W
Luminosity: 80...90lm
Viewing angle: 120°
Colour temperature: 2600-4000K
Type of diode: power LED
LED version: STAR
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
16+4.69 EUR
19+3.82 EUR
20+3.58 EUR
Mindestbestellmenge: 16
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LL-HP60NWEB pVersion=0046&contRep=ZT&docId=E1C0504A748B03F1A6F5005056AB5A8F&compId=ll-hp60nweb.pdf?ci_sign=5f8baf161f223b6c10a40dd91e2fc0790ea9a194
LL-HP60NWEB
Hersteller: LUCKYLIGHT
Category: White power LEDs - Emiter
Description: Power LED; white cold; STAR; 1W; 4000-10000K; 85÷100lm; 120°
LED colour: white cold
Power: 1W
Luminosity: 85...100lm
Viewing angle: 120°
Colour temperature: 4000-10000K
Type of diode: power LED
LED version: STAR
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.39 EUR
20+3.65 EUR
28+2.65 EUR
29+2.5 EUR
Mindestbestellmenge: 17
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LL-HP60NWEB pVersion=0046&contRep=ZT&docId=E1C0504A748B03F1A6F5005056AB5A8F&compId=ll-hp60nweb.pdf?ci_sign=5f8baf161f223b6c10a40dd91e2fc0790ea9a194
LL-HP60NWEB
Hersteller: LUCKYLIGHT
Category: White power LEDs - Emiter
Description: Power LED; white cold; STAR; 1W; 4000-10000K; 85÷100lm; 120°
LED colour: white cold
Power: 1W
Luminosity: 85...100lm
Viewing angle: 120°
Colour temperature: 4000-10000K
Type of diode: power LED
LED version: STAR
Anzahl je Verpackung: 1 Stücke
auf Bestellung 70 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
17+4.39 EUR
20+3.65 EUR
28+2.65 EUR
29+2.5 EUR
100+2.46 EUR
Mindestbestellmenge: 17
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NP60N04ILF-E1-AZ np60n04hlfnp60n04ilf-data-sheet
NP60N04ILF-E1-AZ
Hersteller: Renesas
Description: NP60N04ILF-E1-AZ - SWITCHINGN-CH
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3Z)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
136+3.32 EUR
Mindestbestellmenge: 136
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NP60N04VDK-E1-AY np60n04vdk40-v-60-n-channel-power-mos-fetapplication-automotive?r=499856
NP60N04VDK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: POWER TRS2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4156 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.56 EUR
10+2.29 EUR
100+1.56 EUR
500+1.25 EUR
1000+1.15 EUR
Mindestbestellmenge: 5
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NP60N04VLK-E1-AY np60n04vlk40-v-60-n-channel-power-mos-fetapplication-automotive?r=499861
NP60N04VLK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2498 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.63 EUR
10+2.33 EUR
100+1.59 EUR
500+1.27 EUR
1000+1.25 EUR
Mindestbestellmenge: 5
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NP60N04VUK-E1-AY np60n04vukmos-field-effect-transistor
NP60N04VUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 60A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4171 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.56 EUR
10+2.29 EUR
100+1.56 EUR
500+1.25 EUR
1000+1.15 EUR
Mindestbestellmenge: 5
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NP60N055VUK-E1-AY REN_r07ds0588ej0200-pomosfet_DST_20180524.pdf
NP60N055VUK-E1-AY
Hersteller: Renesas Electronics
MOSFETs Nch Power MOSFET 55V 60A 5.5mohm TO-252 / DPAK
auf Bestellung 2390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.41 EUR
10+2.01 EUR
100+1.56 EUR
500+1.24 EUR
1000+1.15 EUR
2500+1.03 EUR
Mindestbestellmenge: 2
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NP60N055VUK-E1-AY np60n055vukmos-field-effect-transistor
NP60N055VUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 60A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.99 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
NP60N055VUK-E1-AY np60n055vukmos-field-effect-transistor
NP60N055VUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 60A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7973 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.45 EUR
10+2.05 EUR
100+1.55 EUR
500+1.24 EUR
1000+1.21 EUR
Mindestbestellmenge: 8
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NP60N06VDK-E1-AY np60n06vdk60-v-60-n-channel-power-mos-fet-application-automotive?r=499906
NP60N06VDK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5373 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.85 EUR
10+2.2 EUR
100+1.56 EUR
500+1.24 EUR
1000+1.21 EUR
Mindestbestellmenge: 7
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NP60N06VDK-E1-AY np60n06vdk60-v-60-n-channel-power-mos-fet-application-automotive?r=499906
NP60N06VDK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.99 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
NP60N06VDK-E1-AY REN_r07ds1340ej0200-pomosfet_DST_20180524.pdf
NP60N06VDK-E1-AY
Hersteller: Renesas Electronics
MOSFETs Nch Power MOSFET 60V 60A 7.9mohm TO-252 / DPAK
auf Bestellung 2553 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.78 EUR
10+2.16 EUR
100+1.56 EUR
250+1.53 EUR
500+1.25 EUR
1000+1.19 EUR
2500+1.03 EUR
Mindestbestellmenge: 2
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NP60N06VLK-E1-AY np60n06vlk60-v-60-n-channel-power-mos-fet-application-automotive?r=499911
NP60N06VLK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3202 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.6 EUR
10+2.16 EUR
100+1.59 EUR
500+1.27 EUR
1000+1.25 EUR
Mindestbestellmenge: 7
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NP60N06VLK-E1-AY np60n06vlk60-v-60-n-channel-power-mos-fet-application-automotive?r=499911
NP60N06VLK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.06 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
NP60N06VLK-E1-AY REN_r07ds1339ej0200-pomosfet_DST_20180524.pdf
NP60N06VLK-E1-AY
Hersteller: Renesas Electronics
MOSFETs Nch Power MOSFET 60V 60A 7.9mohm TO-252 / DPAK
auf Bestellung 2452 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.48 EUR
10+2.06 EUR
100+1.61 EUR
250+1.54 EUR
500+1.28 EUR
1000+1.2 EUR
2500+1.06 EUR
Mindestbestellmenge: 2
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STP60N043DM9 stp60n043dm9.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+9.4 EUR
Mindestbestellmenge: 50
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STP60N043DM9 stp60n043dm9.pdf
STP60N043DM9
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 38 mOhm typ., 56 A MDmesh DM9 Power MOSFET
auf Bestellung 973 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+16.35 EUR
10+10.24 EUR
100+9.93 EUR
500+8.5 EUR
1000+8.08 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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