Suchergebnisse für "n555" : > 60

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2N5551 2N5551
Produktcode: 193606 		Hottech 2N5551.pdf Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-92
fT: 300 MHz
Uceo,V: 160 V
Ucbo,V: 180 V
Ic,A: 0,6 A
ZCODE: THT
auf Bestellung 1678 Stück:
Lieferzeit 21-28 Tag (e)
erwartet 30 Stück:
2N5551 (Bipolartransistor NPN) 2N5551 (Bipolartransistor NPN)
Produktcode: 31024 		Fairchild 2N5551.pdf Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-92
fT: 300 MHz
Uceo,V: 160
Ucbo,V: 180
Ic,A: 0,6
h21: 250
ZCODE: THT
verfügbar: 36 Stück
1+0.06 EUR
10+ 0.045 EUR
2N5551-Y (Bipolartransistor NPN) 2N5551-Y (Bipolartransistor NPN)
Produktcode: 1459 		Philips 2N5551.pdf Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-92
fT: 300 MHz
Uceo,V: 160
Ucbo,V: 180
Ic,A: 0,6
h21: 250
verfügbar: 120 Stück
1+0.04 EUR
10+ 0.034 EUR
100+ 0.028 EUR
N555 TI SOP
auf Bestellung 110 Stücke:
Lieferzeit 21-28 Tag (e)
N555 TI 04+ SOP
auf Bestellung 2188 Stücke:
Lieferzeit 21-28 Tag (e)
N555 TI SOP8
auf Bestellung 119 Stücke:
Lieferzeit 21-28 Tag (e)
N555 TI 09+ SOP8
auf Bestellung 1215 Stücke:
Lieferzeit 21-28 Tag (e)
N555 TI MSOP8
auf Bestellung 900 Stücke:
Lieferzeit 21-28 Tag (e)
N555D PHILIPS 04+
auf Bestellung 2369 Stücke:
Lieferzeit 21-28 Tag (e)
1N5550 1N5550 Microchip Technology 11519-lds-0230-datasheet Rectifiers Std Rectifier _ B-Body
auf Bestellung 156 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.24 EUR
100+ 8.59 EUR
1N5550 1N5550 Microchip Technology 11519-lds-0230-datasheet Description: DIODE GEN PURP 200V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 272 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.29 EUR
100+ 8.63 EUR
Mindestbestellmenge: 2
1N5550US 1N5550US Microchip Technology 10966-sa7-43-datasheet Rectifiers Std Rectifier _ B-Body Sq. Melf
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
1+11.33 EUR
100+ 10.54 EUR
500+ 10.52 EUR
1N5551 1N5551 Microchip Technology 11519-lds-0230-datasheet Rectifiers Std Rectifier _ B-Body
auf Bestellung 193 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.24 EUR
100+ 8.59 EUR
1N5551US 1N5551US Microchip Technology 10966-sa7-43-datasheet Description: DIODE GEN PURP 400V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.53 EUR
100+ 10.71 EUR
Mindestbestellmenge: 2
1N5551US 1N5551US Microchip Technology 10966-sa7-43-datasheet Rectifiers Std Rectifier _ B-Body Sq. Melf
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
1+11.46 EUR
100+ 10.65 EUR
1N5552 1N5552 Microchip Technology lds-0230.pdf Rectifier Diode Switching 600V 5A 2000ns 2-Pin Case E Bag
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
1N5552 1N5552 Microchip Technology 11519-lds-0230-datasheet Rectifiers Std Rectifier _ B-Body
auf Bestellung 11664 Stücke:
Lieferzeit 178-182 Tag (e)
1+8.92 EUR
100+ 8.29 EUR
1N5552US 1N5552US Microchip Technology 10966-sa7-43-datasheet Rectifiers Std Rectifier _ B-Body Sq. Melf
auf Bestellung 241 Stücke:
Lieferzeit 10-14 Tag (e)
1+11.46 EUR
100+ 10.65 EUR
1N5552US/TR 1N5552US/TR Microchip Technology 10966-sa7-43-datasheet Rectifiers Std Rectifier _ B-Body Sq. Melf
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
1+11.7 EUR
100+ 10.88 EUR
1N5553 1N5553 Microchip Technology 11519-lds-0230-datasheet Rectifiers Std Rectifier _ B-Body
auf Bestellung 408 Stücke:
Lieferzeit 10-14 Tag (e)
1+11.09 EUR
10+ 11.04 EUR
25+ 10.96 EUR
100+ 10.54 EUR
1N5553 1N5553 Microchip Technology 11519-lds-0230-datasheet Description: DIODE GEN PURP 800V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 328 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.44 EUR
100+ 10.63 EUR
Mindestbestellmenge: 2
1N5553US 1N5553US Microchip Technology 10966-sa7-43-datasheet Description: DIODE GEN PURP 800V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 47 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.2 EUR
Mindestbestellmenge: 2
1N5554 1N5554 Microchip Technology 11519-lds-0230-datasheet Description: DIODE GEN PURP 1KV 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 333 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.03 EUR
100+ 13.02 EUR
Mindestbestellmenge: 2
1N5554 1N5554 Microchip Technology 11519-lds-0230-datasheet Rectifiers Std Rectifier _ B-Body
auf Bestellung 264 Stücke:
Lieferzeit 10-14 Tag (e)
1+13.92 EUR
100+ 12.94 EUR
1N5554US 1N5554US Microchip Technology 10966-sa7-43-datasheet Rectifiers Std Rectifier _ B-Body Sq. Melf
auf Bestellung 199 Stücke:
Lieferzeit 10-14 Tag (e)
1+12.94 EUR
25+ 12.78 EUR
100+ 12.46 EUR
1N5554US 1N5554US Microchip Technology 10966-sa7-43-datasheet Description: DIODE GEN PURP 1KV 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.5 EUR
100+ 12.54 EUR
Mindestbestellmenge: 2
1N5554US/TR 1N5554US/TR Microchip Technology lds-0230-1.pdf Surface Mount Standard Recovery Glass Rectifiers
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
1N5555 1N5555 Microchip Technology 8920-lds-0094-datasheet Description: TVS DIODE 30.5VWM 47.5VC DO13
Packaging: Bulk
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32A
Voltage - Reverse Standoff (Typ): 30.5V
Supplier Device Package: DO-13
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 52 Stücke:
Lieferzeit 10-14 Tag (e)
1+25.1 EUR
1N5555 1N5555 Microchip Technology 8920-lds-0094-datasheet ESD Suppressors / TVS Diodes Uni-Directional TVS _ DO-13
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
1+24.92 EUR
100+ 23.16 EUR
1N5556 1N5556 Microchip Technology 8920-lds-0094-datasheet Description: TVS DIODE 40.3VWM 63.5VC DO13
Packaging: Bulk
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 40.3V
Supplier Device Package: DO-13
Unidirectional Channels: 1
Voltage - Breakdown (Min): 43.7V
Voltage - Clamping (Max) @ Ipp: 63.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
1+37.21 EUR
1N5556 1N5556 Microchip Technology 8920-lds-0094-datasheet ESD Suppressors / TVS Diodes Uni-Directional TVS _ DO-13
auf Bestellung 438 Stücke:
Lieferzeit 10-14 Tag (e)
1+36.96 EUR
100+ 34.32 EUR
1N5558 1N5558 Microchip Technology 8920-lds-0094-datasheet ESD Suppressors / TVS Diodes Uni-Directional TVS _ DO-13
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
1+48.03 EUR
100+ 44.6 EUR
2N5550 2N5550 LUGUANG ELECTRONIC 2N5550.pdf description Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 20...250
Mounting: THT
Frequency: 100...300MHz
auf Bestellung 2665 Stücke:
Lieferzeit 14-21 Tag (e)
1430+0.05 EUR
2595+ 0.028 EUR
2665+ 0.027 EUR
Mindestbestellmenge: 1430
2N5550 2N5550 CDIL 2N5550 Rev4.pdf description Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 625mW/1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625/1.5W
Case: TO92
Current gain: 20...250
Mounting: THT
Frequency: 100...300MHz
auf Bestellung 4959 Stücke:
Lieferzeit 14-21 Tag (e)
1900+0.038 EUR
2325+ 0.031 EUR
2650+ 0.027 EUR
2875+ 0.025 EUR
2925+ 0.024 EUR
3050+ 0.023 EUR
Mindestbestellmenge: 1900
2N5550 2N5550 CDIL 2N5550 Rev4.pdf description Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 625mW/1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625/1.5W
Case: TO92
Current gain: 20...250
Mounting: THT
Frequency: 100...300MHz
Anzahl je Verpackung: 25 Stücke
auf Bestellung 4959 Stücke:
Lieferzeit 7-14 Tag (e)
1900+0.038 EUR
2325+ 0.031 EUR
2650+ 0.027 EUR
2875+ 0.025 EUR
2925+ 0.024 EUR
3050+ 0.023 EUR
Mindestbestellmenge: 1900
2N5550 2N5550 LUGUANG ELECTRONIC 2N5550.pdf description Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 20...250
Mounting: THT
Frequency: 100...300MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2665 Stücke:
Lieferzeit 7-14 Tag (e)
1430+0.05 EUR
2595+ 0.028 EUR
2665+ 0.027 EUR
3000+ 0.024 EUR
Mindestbestellmenge: 1430
2N5550 LGE 2N5550 Rev4.pdf description Trans GP BJT NPN 140V 0.6A 625mW 3-Pin TO-92 Fan-Fold 2N5550G 2N5550RLRPG 2N5550TA 2N5550TAR 2N5550TFR 2N5550-LGE 2N5550 T2N5550
Anzahl je Verpackung: 500 Stücke
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)
500+0.06 EUR
Mindestbestellmenge: 500
2N5550 PBFREE 2N5550 PBFREE Central Semiconductor Bipolar Transistors - BJT NPN Gen Pur SS
auf Bestellung 9713 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.78 EUR
10+ 0.68 EUR
100+ 0.51 EUR
500+ 0.4 EUR
1000+ 0.31 EUR
2500+ 0.28 EUR
10000+ 0.24 EUR
Mindestbestellmenge: 4
2N5550/D26Z 2N5550/D26Z Fairchild Semiconductor FAIRS25003-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
11539+0.049 EUR
Mindestbestellmenge: 11539
2N5550RLRA 2N5550RLRA onsemi 2N5550%20Rev4.pdf Description: TRANS NPN 140V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
6662+0.082 EUR
Mindestbestellmenge: 6662
2N5550RLRAG 2N5550RLRAG onsemi 2N5550%20Rev4.pdf Description: TRANS NPN 140V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
6662+0.082 EUR
Mindestbestellmenge: 6662
2N5550RLRP 2N5550RLRP onsemi 2N5550%20Rev4.pdf Description: TRANS NPN 140V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 164000 Stücke:
Lieferzeit 10-14 Tag (e)
6662+0.082 EUR
Mindestbestellmenge: 6662
2N5550TA 2N5550TA onsemi / Fairchild 2N5550_D-2309758.pdf Bipolar Transistors - BJT NPN Si Transistor Epitaxial
auf Bestellung 8146 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.59 EUR
10+ 0.4 EUR
100+ 0.16 EUR
1000+ 0.11 EUR
2000+ 0.063 EUR
Mindestbestellmenge: 5
2N5550TA 2N5550TA onsemi ONSM-S-A0003593127-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 3474 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.6 EUR
44+ 0.4 EUR
100+ 0.2 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 30
2N5550TA 2N5550TA onsemi ONSM-S-A0003593127-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.069 EUR
6000+ 0.064 EUR
10000+ 0.055 EUR
Mindestbestellmenge: 2000
2N5550TA 2N5550TA Fairchild Semiconductor FAIR-S-A0000605469-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 33620 Stücke:
Lieferzeit 10-14 Tag (e)
7755+0.066 EUR
Mindestbestellmenge: 7755
2N5550TAR 2N5550TAR onsemi / Fairchild 2N5550_D-2309758.pdf Bipolar Transistors - BJT NPN Si Transistor Epitaxial
auf Bestellung 7235 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.57 EUR
10+ 0.4 EUR
100+ 0.14 EUR
1000+ 0.12 EUR
2000+ 0.077 EUR
Mindestbestellmenge: 5
2N5550TAR 2N5550TAR onsemi ONSM-S-A0003593127-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 134000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.073 EUR
6000+ 0.07 EUR
10000+ 0.067 EUR
Mindestbestellmenge: 2000
2N5550TAR 2N5550TAR onsemi ONSM-S-A0003593127-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 105644 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
44+ 0.4 EUR
100+ 0.2 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 31
2N5550TF 2N5550TF Fairchild Semiconductor FAIR-S-A0000605469-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 29681 Stücke:
Lieferzeit 10-14 Tag (e)
11539+0.049 EUR
Mindestbestellmenge: 11539
2N5550TFR 2N5550TFR onsemi ONSM-S-A0003593127-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 120000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.069 EUR
6000+ 0.064 EUR
10000+ 0.055 EUR
Mindestbestellmenge: 2000
2N5550TFR 2N5550TFR Fairchild Semiconductor ONSM-S-A0003593127-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR,
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 22874 Stücke:
Lieferzeit 10-14 Tag (e)
7755+0.066 EUR
Mindestbestellmenge: 7755
2N5550TFR 2N5550TFR onsemi / Fairchild 2N5550_D-2309758.pdf Bipolar Transistors - BJT NPN Si Transistor Epitaxial
auf Bestellung 9366 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.59 EUR
10+ 0.4 EUR
100+ 0.16 EUR
1000+ 0.11 EUR
2000+ 0.063 EUR
Mindestbestellmenge: 5
2N5550TFR 2N5550TFR onsemi ONSM-S-A0003593127-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 121057 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.6 EUR
44+ 0.4 EUR
100+ 0.2 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 30
2N5551 2N5551 CDIL 2n5551.pdf 2N5551.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625/15W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625/15W
Case: TO92
Current gain: 30...250
Mounting: THT
Frequency: 100...300MHz
auf Bestellung 1975 Stücke:
Lieferzeit 14-21 Tag (e)
1900+0.038 EUR
1975+ 0.036 EUR
Mindestbestellmenge: 1900
2N5551
+1
 		2N5551 DIOTEC SEMICONDUCTOR 2n5551.pdf 2N5551.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 625mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
auf Bestellung 25900 Stücke:
Lieferzeit 14-21 Tag (e)
1425+0.051 EUR
2050+ 0.035 EUR
2600+ 0.028 EUR
3275+ 0.022 EUR
3450+ 0.021 EUR
12000+ 0.02 EUR
Mindestbestellmenge: 1425
2N5551 HOTTECH 2n5551.pdf 2N5551.pdf NPN 600mA 160V 625mW 2N5551 T2N5551
Anzahl je Verpackung: 1000 Stücke
auf Bestellung 1030 Stücke:
Lieferzeit 7-14 Tag (e)
1000+0.047 EUR
Mindestbestellmenge: 1000
2N5551 2N5551 CDIL 2n5551.pdf 2N5551.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625/15W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625/15W
Case: TO92
Current gain: 30...250
Mounting: THT
Frequency: 100...300MHz
Anzahl je Verpackung: 25 Stücke
auf Bestellung 1975 Stücke:
Lieferzeit 7-14 Tag (e)
1900+0.038 EUR
1975+ 0.036 EUR
5000+ 0.024 EUR
Mindestbestellmenge: 1900
2N5551 JSMicro Semiconductor 2n5551.pdf 2N5551.pdf Transistor NPN; 300; 350mW; 160V; 600mA; 300MHz; -55°C ~ 150°C; Equivalent: 2N5551,412; 2N5551-BP; 2N5551BU; 2N5551G; 2N5551 JSMICRO T2N5551 JSM
Anzahl je Verpackung: 1000 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)
1000+0.061 EUR
Mindestbestellmenge: 1000
2N5551
+1
 		2N5551 DIOTEC SEMICONDUCTOR 2n5551.pdf 2N5551.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 625mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Anzahl je Verpackung: 25 Stücke
auf Bestellung 25900 Stücke:
Lieferzeit 7-14 Tag (e)
1425+0.051 EUR
2050+ 0.035 EUR
2600+ 0.028 EUR
3275+ 0.022 EUR
3450+ 0.021 EUR
12000+ 0.02 EUR
Mindestbestellmenge: 1425
2N5551
Produktcode: 193606		 2N5551.pdf
2N5551
Hersteller: Hottech
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-92
fT: 300 MHz
Uceo,V: 160 V
Ucbo,V: 180 V
Ic,A: 0,6 A
ZCODE: THT
auf Bestellung 1678 Stück:
Lieferzeit 21-28 Tag (e)
erwartet 30 Stück:
2N5551 (Bipolartransistor NPN)
Produktcode: 31024		 2N5551.pdf
2N5551 (Bipolartransistor NPN)
Hersteller: Fairchild
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-92
fT: 300 MHz
Uceo,V: 160
Ucbo,V: 180
Ic,A: 0,6
h21: 250
ZCODE: THT
verfügbar: 36 Stück
Anzahl Preis ohne MwSt
1+0.06 EUR
10+ 0.045 EUR
2N5551-Y (Bipolartransistor NPN)
Produktcode: 1459		 2N5551.pdf
2N5551-Y (Bipolartransistor NPN)
Hersteller: Philips
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-92
fT: 300 MHz
Uceo,V: 160
Ucbo,V: 180
Ic,A: 0,6
h21: 250
verfügbar: 120 Stück
Anzahl Preis ohne MwSt
1+0.04 EUR
10+ 0.034 EUR
100+ 0.028 EUR
N555
Hersteller: TI
SOP
auf Bestellung 110 Stücke:
Lieferzeit 21-28 Tag (e)
N555
Hersteller: TI
04+ SOP
auf Bestellung 2188 Stücke:
Lieferzeit 21-28 Tag (e)
N555
Hersteller: TI
SOP8
auf Bestellung 119 Stücke:
Lieferzeit 21-28 Tag (e)
N555
Hersteller: TI
09+ SOP8
auf Bestellung 1215 Stücke:
Lieferzeit 21-28 Tag (e)
N555
Hersteller: TI
MSOP8
auf Bestellung 900 Stücke:
Lieferzeit 21-28 Tag (e)
N555D
Hersteller: PHILIPS
04+
auf Bestellung 2369 Stücke:
Lieferzeit 21-28 Tag (e)
1N5550 11519-lds-0230-datasheet
1N5550
Hersteller: Microchip Technology
Rectifiers Std Rectifier _ B-Body
auf Bestellung 156 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+9.24 EUR
100+ 8.59 EUR
1N5550 11519-lds-0230-datasheet
1N5550
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 272 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.29 EUR
100+ 8.63 EUR
Mindestbestellmenge: 2
1N5550US 10966-sa7-43-datasheet
1N5550US
Hersteller: Microchip Technology
Rectifiers Std Rectifier _ B-Body Sq. Melf
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+11.33 EUR
100+ 10.54 EUR
500+ 10.52 EUR
1N5551 11519-lds-0230-datasheet
1N5551
Hersteller: Microchip Technology
Rectifiers Std Rectifier _ B-Body
auf Bestellung 193 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+9.24 EUR
100+ 8.59 EUR
1N5551US 10966-sa7-43-datasheet
1N5551US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+11.53 EUR
100+ 10.71 EUR
Mindestbestellmenge: 2
1N5551US 10966-sa7-43-datasheet
1N5551US
Hersteller: Microchip Technology
Rectifiers Std Rectifier _ B-Body Sq. Melf
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+11.46 EUR
100+ 10.65 EUR
1N5552 lds-0230.pdf
1N5552
Hersteller: Microchip Technology
Rectifier Diode Switching 600V 5A 2000ns 2-Pin Case E Bag
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
1N5552 11519-lds-0230-datasheet
1N5552
Hersteller: Microchip Technology
Rectifiers Std Rectifier _ B-Body
auf Bestellung 11664 Stücke:
Lieferzeit 178-182 Tag (e)
Anzahl Preis ohne MwSt
1+8.92 EUR
100+ 8.29 EUR
1N5552US 10966-sa7-43-datasheet
1N5552US
Hersteller: Microchip Technology
Rectifiers Std Rectifier _ B-Body Sq. Melf
auf Bestellung 241 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+11.46 EUR
100+ 10.65 EUR
1N5552US/TR 10966-sa7-43-datasheet
1N5552US/TR
Hersteller: Microchip Technology
Rectifiers Std Rectifier _ B-Body Sq. Melf
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+11.7 EUR
100+ 10.88 EUR
1N5553 11519-lds-0230-datasheet
1N5553
Hersteller: Microchip Technology
Rectifiers Std Rectifier _ B-Body
auf Bestellung 408 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+11.09 EUR
10+ 11.04 EUR
25+ 10.96 EUR
100+ 10.54 EUR
1N5553 11519-lds-0230-datasheet
1N5553
Hersteller: Microchip Technology
Description: DIODE GEN PURP 800V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 328 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+11.44 EUR
100+ 10.63 EUR
Mindestbestellmenge: 2
1N5553US 10966-sa7-43-datasheet
1N5553US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 800V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 47 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+17.2 EUR
Mindestbestellmenge: 2
1N5554 11519-lds-0230-datasheet
1N5554
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 333 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+14.03 EUR
100+ 13.02 EUR
Mindestbestellmenge: 2
1N5554 11519-lds-0230-datasheet
1N5554
Hersteller: Microchip Technology
Rectifiers Std Rectifier _ B-Body
auf Bestellung 264 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+13.92 EUR
100+ 12.94 EUR
1N5554US 10966-sa7-43-datasheet
1N5554US
Hersteller: Microchip Technology
Rectifiers Std Rectifier _ B-Body Sq. Melf
auf Bestellung 199 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+12.94 EUR
25+ 12.78 EUR
100+ 12.46 EUR
1N5554US 10966-sa7-43-datasheet
1N5554US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+13.5 EUR
100+ 12.54 EUR
Mindestbestellmenge: 2
1N5554US/TR lds-0230-1.pdf
1N5554US/TR
Hersteller: Microchip Technology
Surface Mount Standard Recovery Glass Rectifiers
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
1N5555 8920-lds-0094-datasheet
1N5555
Hersteller: Microchip Technology
Description: TVS DIODE 30.5VWM 47.5VC DO13
Packaging: Bulk
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32A
Voltage - Reverse Standoff (Typ): 30.5V
Supplier Device Package: DO-13
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 52 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+25.1 EUR
1N5555 8920-lds-0094-datasheet
1N5555
Hersteller: Microchip Technology
ESD Suppressors / TVS Diodes Uni-Directional TVS _ DO-13
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+24.92 EUR
100+ 23.16 EUR
1N5556 8920-lds-0094-datasheet
1N5556
Hersteller: Microchip Technology
Description: TVS DIODE 40.3VWM 63.5VC DO13
Packaging: Bulk
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 40.3V
Supplier Device Package: DO-13
Unidirectional Channels: 1
Voltage - Breakdown (Min): 43.7V
Voltage - Clamping (Max) @ Ipp: 63.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+37.21 EUR
1N5556 8920-lds-0094-datasheet
1N5556
Hersteller: Microchip Technology
ESD Suppressors / TVS Diodes Uni-Directional TVS _ DO-13
auf Bestellung 438 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+36.96 EUR
100+ 34.32 EUR
1N5558 8920-lds-0094-datasheet
1N5558
Hersteller: Microchip Technology
ESD Suppressors / TVS Diodes Uni-Directional TVS _ DO-13
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+48.03 EUR
100+ 44.6 EUR
2N5550 description 2N5550.pdf
2N5550
Hersteller: LUGUANG ELECTRONIC
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 20...250
Mounting: THT
Frequency: 100...300MHz
auf Bestellung 2665 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1430+0.05 EUR
2595+ 0.028 EUR
2665+ 0.027 EUR
Mindestbestellmenge: 1430
2N5550 description 2N5550 Rev4.pdf
2N5550
Hersteller: CDIL
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 625mW/1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625/1.5W
Case: TO92
Current gain: 20...250
Mounting: THT
Frequency: 100...300MHz
auf Bestellung 4959 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1900+0.038 EUR
2325+ 0.031 EUR
2650+ 0.027 EUR
2875+ 0.025 EUR
2925+ 0.024 EUR
3050+ 0.023 EUR
Mindestbestellmenge: 1900
2N5550 description 2N5550 Rev4.pdf
2N5550
Hersteller: CDIL
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 625mW/1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625/1.5W
Case: TO92
Current gain: 20...250
Mounting: THT
Frequency: 100...300MHz
Anzahl je Verpackung: 25 Stücke
auf Bestellung 4959 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1900+0.038 EUR
2325+ 0.031 EUR
2650+ 0.027 EUR
2875+ 0.025 EUR
2925+ 0.024 EUR
3050+ 0.023 EUR
Mindestbestellmenge: 1900
2N5550 description 2N5550.pdf
2N5550
Hersteller: LUGUANG ELECTRONIC
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 20...250
Mounting: THT
Frequency: 100...300MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2665 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1430+0.05 EUR
2595+ 0.028 EUR
2665+ 0.027 EUR
3000+ 0.024 EUR
Mindestbestellmenge: 1430
2N5550 description 2N5550 Rev4.pdf
Hersteller: LGE
Trans GP BJT NPN 140V 0.6A 625mW 3-Pin TO-92 Fan-Fold 2N5550G 2N5550RLRPG 2N5550TA 2N5550TAR 2N5550TFR 2N5550-LGE 2N5550 T2N5550
Anzahl je Verpackung: 500 Stücke
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
500+0.06 EUR
Mindestbestellmenge: 500
2N5550 PBFREE
2N5550 PBFREE
Hersteller: Central Semiconductor
Bipolar Transistors - BJT NPN Gen Pur SS
auf Bestellung 9713 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.78 EUR
10+ 0.68 EUR
100+ 0.51 EUR
500+ 0.4 EUR
1000+ 0.31 EUR
2500+ 0.28 EUR
10000+ 0.24 EUR
Mindestbestellmenge: 4
2N5550/D26Z FAIRS25003-1.pdf?t.download=true&u=5oefqw
2N5550/D26Z
Hersteller: Fairchild Semiconductor
Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11539+0.049 EUR
Mindestbestellmenge: 11539
2N5550RLRA 2N5550%20Rev4.pdf
2N5550RLRA
Hersteller: onsemi
Description: TRANS NPN 140V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6662+0.082 EUR
Mindestbestellmenge: 6662
2N5550RLRAG 2N5550%20Rev4.pdf
2N5550RLRAG
Hersteller: onsemi
Description: TRANS NPN 140V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6662+0.082 EUR
Mindestbestellmenge: 6662
2N5550RLRP 2N5550%20Rev4.pdf
2N5550RLRP
Hersteller: onsemi
Description: TRANS NPN 140V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 164000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6662+0.082 EUR
Mindestbestellmenge: 6662
2N5550TA 2N5550_D-2309758.pdf
2N5550TA
Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
auf Bestellung 8146 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.59 EUR
10+ 0.4 EUR
100+ 0.16 EUR
1000+ 0.11 EUR
2000+ 0.063 EUR
Mindestbestellmenge: 5
2N5550TA ONSM-S-A0003593127-1.pdf?t.download=true&u=5oefqw
2N5550TA
Hersteller: onsemi
Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 3474 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
30+0.6 EUR
44+ 0.4 EUR
100+ 0.2 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 30
2N5550TA ONSM-S-A0003593127-1.pdf?t.download=true&u=5oefqw
2N5550TA
Hersteller: onsemi
Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+0.069 EUR
6000+ 0.064 EUR
10000+ 0.055 EUR
Mindestbestellmenge: 2000
2N5550TA FAIR-S-A0000605469-1.pdf?t.download=true&u=5oefqw
2N5550TA
Hersteller: Fairchild Semiconductor
Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 33620 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7755+0.066 EUR
Mindestbestellmenge: 7755
2N5550TAR 2N5550_D-2309758.pdf
2N5550TAR
Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
auf Bestellung 7235 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.57 EUR
10+ 0.4 EUR
100+ 0.14 EUR
1000+ 0.12 EUR
2000+ 0.077 EUR
Mindestbestellmenge: 5
2N5550TAR ONSM-S-A0003593127-1.pdf?t.download=true&u=5oefqw
2N5550TAR
Hersteller: onsemi
Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 134000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+0.073 EUR
6000+ 0.07 EUR
10000+ 0.067 EUR
Mindestbestellmenge: 2000
2N5550TAR ONSM-S-A0003593127-1.pdf?t.download=true&u=5oefqw
2N5550TAR
Hersteller: onsemi
Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 105644 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
31+0.58 EUR
44+ 0.4 EUR
100+ 0.2 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 31
2N5550TF FAIR-S-A0000605469-1.pdf?t.download=true&u=5oefqw
2N5550TF
Hersteller: Fairchild Semiconductor
Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 29681 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11539+0.049 EUR
Mindestbestellmenge: 11539
2N5550TFR ONSM-S-A0003593127-1.pdf?t.download=true&u=5oefqw
2N5550TFR
Hersteller: onsemi
Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 120000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+0.069 EUR
6000+ 0.064 EUR
10000+ 0.055 EUR
Mindestbestellmenge: 2000
2N5550TFR ONSM-S-A0003593127-1.pdf?t.download=true&u=5oefqw
2N5550TFR
Hersteller: Fairchild Semiconductor
Description: SMALL SIGNAL BIPOLAR TRANSISTOR,
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 22874 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7755+0.066 EUR
Mindestbestellmenge: 7755
2N5550TFR 2N5550_D-2309758.pdf
2N5550TFR
Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
auf Bestellung 9366 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.59 EUR
10+ 0.4 EUR
100+ 0.16 EUR
1000+ 0.11 EUR
2000+ 0.063 EUR
Mindestbestellmenge: 5
2N5550TFR ONSM-S-A0003593127-1.pdf?t.download=true&u=5oefqw
2N5550TFR
Hersteller: onsemi
Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 121057 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
30+0.6 EUR
44+ 0.4 EUR
100+ 0.2 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 30
2N5551 2n5551.pdf 2N5551.pdf
2N5551
Hersteller: CDIL
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625/15W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625/15W
Case: TO92
Current gain: 30...250
Mounting: THT
Frequency: 100...300MHz
auf Bestellung 1975 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1900+0.038 EUR
1975+ 0.036 EUR
Mindestbestellmenge: 1900
2N5551 2n5551.pdf 2N5551.pdf
2N5551
+1
Hersteller: DIOTEC SEMICONDUCTOR
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 625mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
auf Bestellung 25900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1425+0.051 EUR
2050+ 0.035 EUR
2600+ 0.028 EUR
3275+ 0.022 EUR
3450+ 0.021 EUR
12000+ 0.02 EUR
Mindestbestellmenge: 1425
2N5551 2n5551.pdf 2N5551.pdf
Hersteller: HOTTECH
NPN 600mA 160V 625mW 2N5551 T2N5551
Anzahl je Verpackung: 1000 Stücke
auf Bestellung 1030 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1000+0.047 EUR
Mindestbestellmenge: 1000
2N5551 2n5551.pdf 2N5551.pdf
2N5551
Hersteller: CDIL
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625/15W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625/15W
Case: TO92
Current gain: 30...250
Mounting: THT
Frequency: 100...300MHz
Anzahl je Verpackung: 25 Stücke
auf Bestellung 1975 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1900+0.038 EUR
1975+ 0.036 EUR
5000+ 0.024 EUR
Mindestbestellmenge: 1900
2N5551 2n5551.pdf 2N5551.pdf
Hersteller: JSMicro Semiconductor
Transistor NPN; 300; 350mW; 160V; 600mA; 300MHz; -55°C ~ 150°C; Equivalent: 2N5551,412; 2N5551-BP; 2N5551BU; 2N5551G; 2N5551 JSMICRO T2N5551 JSM
Anzahl je Verpackung: 1000 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1000+0.061 EUR
Mindestbestellmenge: 1000
2N5551 2n5551.pdf 2N5551.pdf
2N5551
+1
Hersteller: DIOTEC SEMICONDUCTOR
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 625mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Anzahl je Verpackung: 25 Stücke
auf Bestellung 25900 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1425+0.051 EUR
2050+ 0.035 EUR
2600+ 0.028 EUR
3275+ 0.022 EUR
3450+ 0.021 EUR
12000+ 0.02 EUR
Mindestbestellmenge: 1425
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