Suchergebnisse für "15n120" : > 120
Art der Ansicht :
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| KGH15N120NDA | KEC | 09+ |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| KL732B-15NG-T 15N-1206 | KOA |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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| NGTB15N120IHRWG | ON Semiconductor |
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auf Bestellung 90 Stücke: Lieferzeit 21-28 Tag (e) |
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| NGTB15N120IHWG | ON Semiconductor |
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auf Bestellung 30 Stücke: Lieferzeit 21-28 Tag (e) |
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| NGTG15N120FL2WG | ON Semiconductor |
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auf Bestellung 300 Stücke: Lieferzeit 21-28 Tag (e) |
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| SGB15N120 |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SGB15N120ATMA1 | Infineon |
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auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SGH15N120RUF |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SGP15N120 | INFINEON |
auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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| SGP15N120 | INFINEON | 09+ФУ QFP |
auf Bestellung 5176 Stücke: Lieferzeit 21-28 Tag (e) |
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| SGP15N120XKSA1 | Infineon Technologies |
IGBT 1200V 30A 198W TO220-3 |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| SGW15N120 | INFINEON |
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auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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| SKW15N120 | INFINEON | MODULE |
auf Bestellung 84 Stücke: Lieferzeit 21-28 Tag (e) |
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| SKW15N120 | SKW | 08+ SOP |
auf Bestellung 448 Stücke: Lieferzeit 21-28 Tag (e) |
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| SPN15N120 |
auf Bestellung 4784 Stücke: Lieferzeit 21-28 Tag (e) |
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| Транзистор IGBT FGA15N120ANTDTU_F109 30A 1200V TO-3PN |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
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| Транзистор IGBT IKW15N120H3 (K15H1203) 15A 1200V TO-247 |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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| KL732B-15NG-T | KOA | 15N-1206 |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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FGA15N120ANDTU(Mikroschaltung) Produktcode: 59928 |
Verschiedene Bauteile > Verschiedene Bauteile 2 |
Produkt ist nicht verfügbar
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FGA15N120ANTDTU Produktcode: 149077 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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IGW15N120H3FKSA1 Produktcode: 189073 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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IHW15N120E1XKSA1 Produktcode: 185295 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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IHW15N120R3 Produktcode: 140007 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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IKW15N120BH6XKSA1 Produktcode: 174089 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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IKW15N120H3 Produktcode: 100561 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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IKW15N120T2 Produktcode: 126256 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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NGTB15N120FL2WG Produktcode: 172890 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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NGTB15N120IHLWG Produktcode: 108636 |
ONS |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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NGTB15N120IHRWG Produktcode: 185531 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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SGP15N120 Produktcode: 39733 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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SGP15N120XKSA1 Produktcode: 195669 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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SGW15N120 Produktcode: 94208 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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SKW15N120 Produktcode: 26557 |
Verschiedene Bauteile > Verschiedene Bauteile 2 |
Produkt ist nicht verfügbar
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101R15N120JV4T | Johanson Dielectrics |
Cap Ceramic 12pF 100V C0G 5% Pad SMD 0805 125C T/R |
Produkt ist nicht verfügbar |
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500R15N120FV4T | Johanson Dielectrics |
Cap Ceramic 12pF 50V C0G 1% Pad SMD 0805 125C T/R |
Produkt ist nicht verfügbar |
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500R15N120JV4T | Johanson Dielectrics |
Cap Ceramic 12pF 50V C0G 5% Pad SMD 0805 125C T/R |
Produkt ist nicht verfügbar |
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FGA15N120ANDTU | onsemi |
Description: IGBT 1200V 24A 200W TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 330 ns Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A Supplier Device Package: TO-3PN IGBT Type: NPT Td (on/off) @ 25°C: 90ns/310ns Switching Energy: 3.27mJ (on), 600µJ (off) Test Condition: 600V, 15A, 20Ohm, 15V Gate Charge: 120 nC Part Status: Obsolete Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A Power - Max: 200 W |
Produkt ist nicht verfügbar |
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FGA15N120ANDTU | ON Semiconductor |
Trans IGBT Chip N-CH 1200V 24A 200000mW 3-Pin(3+Tab) TO-3PN Rail |
Produkt ist nicht verfügbar |
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FGA15N120ANTDTU | onsemi |
Description: IGBT 1200V 30A 186W TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 330 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A Supplier Device Package: TO-3P IGBT Type: NPT and Trench Td (on/off) @ 25°C: 15ns/160ns Switching Energy: 3mJ (on), 600µJ (off) Test Condition: 600V, 15A, 10Ohm, 15V Gate Charge: 120 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A Power - Max: 186 W |
Produkt ist nicht verfügbar |
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FGA15N120ANTDTU | ON Semiconductor |
Trans IGBT Chip N-CH 1200V 30A 186000mW 3-Pin(3+Tab) TO-3P Rail |
Produkt ist nicht verfügbar |
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FGA15N120ANTDTU-F109 | onsemi |
Description: IGBT 1200V 30A 186W TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 330 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A Supplier Device Package: TO-3P IGBT Type: NPT and Trench Td (on/off) @ 25°C: 15ns/160ns Switching Energy: 3mJ (on), 600µJ (off) Test Condition: 600V, 15A, 10Ohm, 15V Gate Charge: 120 nC Part Status: Obsolete Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A Power - Max: 186 W |
Produkt ist nicht verfügbar |
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FGA15N120ANTDTU-F109 | ON Semiconductor |
Trans IGBT Chip N-CH 1200V 30A 186000mW 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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FGA15N120FTDTU | onsemi |
Description: IGBT 1200V 30A 220W TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 575 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Supplier Device Package: TO-3P IGBT Type: Trench Field Stop Gate Charge: 100 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A Power - Max: 220 W |
Produkt ist nicht verfügbar |
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FGA15N120FTDTU | ON Semiconductor |
Trans IGBT Chip N-CH 1200V 30A 220000mW 3-Pin(3+Tab) TO-3PN Rail |
Produkt ist nicht verfügbar |
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| HH15N120F250CT | Walsin Technology Corporation |
Description: CAP CER 12PF 25V C0G/NP0 0402 Packaging: Tape & Reel (TR) Tolerance: ±1% Features: High Q, Low Loss, Ultra Low ESR Voltage - Rated: 25V Package / Case: 0402 (1005 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: RF, Microwave, High Frequency Thickness (Max): 0.022" (0.55mm) Part Status: Active Capacitance: 12 pF |
Produkt ist nicht verfügbar |
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HH15N120F250CT | Walsin |
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 MLCC NPO 12 pF, +/- 1% 25 V T&R HH |
Produkt ist nicht verfügbar |
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HH15N120F500CT | WALSIN |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 12pF; 50V; C0G (NP0); ±1%; SMD; 0402 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 12pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±1% Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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HH15N120F500CT | WALSIN |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 12pF; 50V; C0G (NP0); ±1%; SMD; 0402 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 12pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±1% Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -55...125°C Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| HH15N120F500CT | Walsin Technology Corporation |
Description: CAP CER 12PF 50V C0G/NP0 0402 Packaging: Tape & Reel (TR) Tolerance: ±1% Features: High Q, Low Loss, Ultra Low ESR Voltage - Rated: 50V Package / Case: 0402 (1005 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: RF, Microwave, High Frequency Thickness (Max): 0.022" (0.55mm) Part Status: Active Capacitance: 12 pF |
Produkt ist nicht verfügbar |
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HH15N120F500CT | Walsin |
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 MLCC NPO 12 pF, +/- 1% 50 V T&R HH |
Produkt ist nicht verfügbar |
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| HH15N120G500CT | Walsin Technology Corporation |
Description: CAP CER 12PF 50V C0G/NP0 0402 Tolerance: ±2% Features: High Q, Low Loss, Ultra Low ESR Packaging: Tape & Reel (TR) Voltage - Rated: 50V Package / Case: 0402 (1005 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: RF, Microwave, High Frequency Thickness (Max): 0.022" (0.55mm) Part Status: Active Capacitance: 12 pF |
Produkt ist nicht verfügbar |
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HH15N120G500CT | Walsin |
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 MLCC NPO 12 pF, +/- 2% 50 V T&R HH |
Produkt ist nicht verfügbar |
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| HH15N120J500CT | Walsin Technology Corporation |
Description: CAP CER 12PF 50V C0G/NP0 0402 Packaging: Tape & Reel (TR) Tolerance: ±5% Features: High Q, Low Loss, Ultra Low ESR Voltage - Rated: 50V Package / Case: 0402 (1005 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: RF, Microwave, High Frequency Thickness (Max): 0.022" (0.55mm) Part Status: Active Capacitance: 12 pF |
Produkt ist nicht verfügbar |
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HH15N120J500CT | Walsin |
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 MLCC NPO 12 pF, +/- 5% 50 V T&R HH |
Produkt ist nicht verfügbar |
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| IGB15N120S7 | Infineon Technologies | Infineon SMD IGBT series IGB |
Produkt ist nicht verfügbar |
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IKW15N120BH6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3 Mounting: THT Case: TO247-3 Kind of package: tube Type of transistor: IGBT Power dissipation: 100W Gate-emitter voltage: ±20V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 92nC Technology: TRENCHSTOP™ 6 Collector-emitter voltage: 1.2kV Pulsed collector current: 60A Collector current: 15A |
Produkt ist nicht verfügbar |
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IKW15N120BH6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3 Mounting: THT Case: TO247-3 Kind of package: tube Type of transistor: IGBT Power dissipation: 100W Gate-emitter voltage: ±20V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 92nC Technology: TRENCHSTOP™ 6 Collector-emitter voltage: 1.2kV Pulsed collector current: 60A Collector current: 15A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IKW15N120BH6XKSA1 | Infineon Technologies |
Description: IGBT 1200 V 15A TO247-3-46 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 340 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A Supplier Device Package: PG-TO247-3-41 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/240ns Switching Energy: 700µJ (on), 550µJ (off) Test Condition: 600V, 15A, 22Ohm, 15V Gate Charge: 92 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 200 W |
Produkt ist nicht verfügbar |
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IKW15N120BH6XKSA1 | Infineon Technologies |
Trans IGBT Chip N-CH 1200V 30A 200000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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IKW15N120H3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3 Mounting: THT Case: TO247-3 Manufacturer series: H3 Kind of package: tube Type of transistor: IGBT Power dissipation: 217W Gate-emitter voltage: ±20V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 75nC Technology: TRENCHSTOP™ 3 Collector-emitter voltage: 1.2kV Pulsed collector current: 60A Collector current: 30A |
Produkt ist nicht verfügbar |
| SGP15N120XKSA1 |
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Hersteller: Infineon Technologies
IGBT 1200V 30A 198W TO220-3
IGBT 1200V 30A 198W TO220-3
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)| Транзистор IGBT FGA15N120ANTDTU_F109 30A 1200V TO-3PN |
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)| Транзистор IGBT IKW15N120H3 (K15H1203) 15A 1200V TO-247 |
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)| FGA15N120ANDTU(Mikroschaltung) Produktcode: 59928 |
Produkt ist nicht verfügbar
| FGA15N120ANTDTU Produktcode: 149077 |
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Produkt ist nicht verfügbar
| IGW15N120H3FKSA1 Produktcode: 189073 |
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Produkt ist nicht verfügbar
| IHW15N120E1XKSA1 Produktcode: 185295 |
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Produkt ist nicht verfügbar
| IHW15N120R3 Produktcode: 140007 |
Produkt ist nicht verfügbar
| IKW15N120BH6XKSA1 Produktcode: 174089 |
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Produkt ist nicht verfügbar
| IKW15N120T2 Produktcode: 126256 |
Produkt ist nicht verfügbar
| NGTB15N120FL2WG Produktcode: 172890 |
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Produkt ist nicht verfügbar
| NGTB15N120IHRWG Produktcode: 185531 |
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Produkt ist nicht verfügbar
| SGP15N120 Produktcode: 39733 |
Produkt ist nicht verfügbar
| SGP15N120XKSA1 Produktcode: 195669 |
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Produkt ist nicht verfügbar
| SGW15N120 Produktcode: 94208 |
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Produkt ist nicht verfügbar
| SKW15N120 Produktcode: 26557 |
Produkt ist nicht verfügbar
| 101R15N120JV4T |
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Hersteller: Johanson Dielectrics
Cap Ceramic 12pF 100V C0G 5% Pad SMD 0805 125C T/R
Cap Ceramic 12pF 100V C0G 5% Pad SMD 0805 125C T/R
Produkt ist nicht verfügbar
| 500R15N120FV4T |
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Hersteller: Johanson Dielectrics
Cap Ceramic 12pF 50V C0G 1% Pad SMD 0805 125C T/R
Cap Ceramic 12pF 50V C0G 1% Pad SMD 0805 125C T/R
Produkt ist nicht verfügbar
| 500R15N120JV4T |
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Hersteller: Johanson Dielectrics
Cap Ceramic 12pF 50V C0G 5% Pad SMD 0805 125C T/R
Cap Ceramic 12pF 50V C0G 5% Pad SMD 0805 125C T/R
Produkt ist nicht verfügbar
| FGA15N120ANDTU |
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Hersteller: onsemi
Description: IGBT 1200V 24A 200W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 330 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
Supplier Device Package: TO-3PN
IGBT Type: NPT
Td (on/off) @ 25°C: 90ns/310ns
Switching Energy: 3.27mJ (on), 600µJ (off)
Test Condition: 600V, 15A, 20Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 200 W
Description: IGBT 1200V 24A 200W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 330 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
Supplier Device Package: TO-3PN
IGBT Type: NPT
Td (on/off) @ 25°C: 90ns/310ns
Switching Energy: 3.27mJ (on), 600µJ (off)
Test Condition: 600V, 15A, 20Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 200 W
Produkt ist nicht verfügbar
| FGA15N120ANDTU |
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Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 1200V 24A 200000mW 3-Pin(3+Tab) TO-3PN Rail
Trans IGBT Chip N-CH 1200V 24A 200000mW 3-Pin(3+Tab) TO-3PN Rail
Produkt ist nicht verfügbar
| FGA15N120ANTDTU |
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Hersteller: onsemi
Description: IGBT 1200V 30A 186W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 330 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: TO-3P
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 15ns/160ns
Switching Energy: 3mJ (on), 600µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 186 W
Description: IGBT 1200V 30A 186W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 330 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: TO-3P
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 15ns/160ns
Switching Energy: 3mJ (on), 600µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 186 W
Produkt ist nicht verfügbar
| FGA15N120ANTDTU |
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Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 1200V 30A 186000mW 3-Pin(3+Tab) TO-3P Rail
Trans IGBT Chip N-CH 1200V 30A 186000mW 3-Pin(3+Tab) TO-3P Rail
Produkt ist nicht verfügbar
| FGA15N120ANTDTU-F109 |
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Hersteller: onsemi
Description: IGBT 1200V 30A 186W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 330 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: TO-3P
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 15ns/160ns
Switching Energy: 3mJ (on), 600µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 186 W
Description: IGBT 1200V 30A 186W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 330 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: TO-3P
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 15ns/160ns
Switching Energy: 3mJ (on), 600µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 186 W
Produkt ist nicht verfügbar
| FGA15N120ANTDTU-F109 |
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Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 1200V 30A 186000mW 3-Pin(3+Tab) TO-3P Tube
Trans IGBT Chip N-CH 1200V 30A 186000mW 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
| FGA15N120FTDTU |
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Hersteller: onsemi
Description: IGBT 1200V 30A 220W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 575 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 220 W
Description: IGBT 1200V 30A 220W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 575 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 220 W
Produkt ist nicht verfügbar
| FGA15N120FTDTU |
|
Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 1200V 30A 220000mW 3-Pin(3+Tab) TO-3PN Rail
Trans IGBT Chip N-CH 1200V 30A 220000mW 3-Pin(3+Tab) TO-3PN Rail
Produkt ist nicht verfügbar
| HH15N120F250CT |
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Hersteller: Walsin Technology Corporation
Description: CAP CER 12PF 25V C0G/NP0 0402
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Features: High Q, Low Loss, Ultra Low ESR
Voltage - Rated: 25V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: RF, Microwave, High Frequency
Thickness (Max): 0.022" (0.55mm)
Part Status: Active
Capacitance: 12 pF
Description: CAP CER 12PF 25V C0G/NP0 0402
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Features: High Q, Low Loss, Ultra Low ESR
Voltage - Rated: 25V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: RF, Microwave, High Frequency
Thickness (Max): 0.022" (0.55mm)
Part Status: Active
Capacitance: 12 pF
Produkt ist nicht verfügbar
| HH15N120F250CT |
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Hersteller: Walsin
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 MLCC NPO 12 pF, +/- 1% 25 V T&R HH
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 MLCC NPO 12 pF, +/- 1% 25 V T&R HH
Produkt ist nicht verfügbar
| HH15N120F500CT |
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Hersteller: WALSIN
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 12pF; 50V; C0G (NP0); ±1%; SMD; 0402
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 12pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 12pF; 50V; C0G (NP0); ±1%; SMD; 0402
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 12pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| HH15N120F500CT |
|
Hersteller: WALSIN
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 12pF; 50V; C0G (NP0); ±1%; SMD; 0402
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 12pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Anzahl je Verpackung: 10000 Stücke
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 12pF; 50V; C0G (NP0); ±1%; SMD; 0402
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 12pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| HH15N120F500CT |
|
Hersteller: Walsin Technology Corporation
Description: CAP CER 12PF 50V C0G/NP0 0402
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Features: High Q, Low Loss, Ultra Low ESR
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: RF, Microwave, High Frequency
Thickness (Max): 0.022" (0.55mm)
Part Status: Active
Capacitance: 12 pF
Description: CAP CER 12PF 50V C0G/NP0 0402
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Features: High Q, Low Loss, Ultra Low ESR
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: RF, Microwave, High Frequency
Thickness (Max): 0.022" (0.55mm)
Part Status: Active
Capacitance: 12 pF
Produkt ist nicht verfügbar
| HH15N120F500CT |
|
Hersteller: Walsin
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 MLCC NPO 12 pF, +/- 1% 50 V T&R HH
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 MLCC NPO 12 pF, +/- 1% 50 V T&R HH
Produkt ist nicht verfügbar
| HH15N120G500CT |
|
Hersteller: Walsin Technology Corporation
Description: CAP CER 12PF 50V C0G/NP0 0402
Tolerance: ±2%
Features: High Q, Low Loss, Ultra Low ESR
Packaging: Tape & Reel (TR)
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: RF, Microwave, High Frequency
Thickness (Max): 0.022" (0.55mm)
Part Status: Active
Capacitance: 12 pF
Description: CAP CER 12PF 50V C0G/NP0 0402
Tolerance: ±2%
Features: High Q, Low Loss, Ultra Low ESR
Packaging: Tape & Reel (TR)
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: RF, Microwave, High Frequency
Thickness (Max): 0.022" (0.55mm)
Part Status: Active
Capacitance: 12 pF
Produkt ist nicht verfügbar
| HH15N120G500CT |
|
Hersteller: Walsin
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 MLCC NPO 12 pF, +/- 2% 50 V T&R HH
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 MLCC NPO 12 pF, +/- 2% 50 V T&R HH
Produkt ist nicht verfügbar
| HH15N120J500CT |
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Hersteller: Walsin Technology Corporation
Description: CAP CER 12PF 50V C0G/NP0 0402
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Features: High Q, Low Loss, Ultra Low ESR
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: RF, Microwave, High Frequency
Thickness (Max): 0.022" (0.55mm)
Part Status: Active
Capacitance: 12 pF
Description: CAP CER 12PF 50V C0G/NP0 0402
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Features: High Q, Low Loss, Ultra Low ESR
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: RF, Microwave, High Frequency
Thickness (Max): 0.022" (0.55mm)
Part Status: Active
Capacitance: 12 pF
Produkt ist nicht verfügbar
| HH15N120J500CT |
|
Hersteller: Walsin
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 MLCC NPO 12 pF, +/- 5% 50 V T&R HH
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 MLCC NPO 12 pF, +/- 5% 50 V T&R HH
Produkt ist nicht verfügbar
| IGB15N120S7 |
Hersteller: Infineon Technologies
Infineon SMD IGBT series IGB
Infineon SMD IGBT series IGB
Produkt ist nicht verfügbar
| IKW15N120BH6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Type of transistor: IGBT
Power dissipation: 100W
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 92nC
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Pulsed collector current: 60A
Collector current: 15A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Type of transistor: IGBT
Power dissipation: 100W
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 92nC
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Pulsed collector current: 60A
Collector current: 15A
Produkt ist nicht verfügbar
| IKW15N120BH6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Type of transistor: IGBT
Power dissipation: 100W
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 92nC
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Pulsed collector current: 60A
Collector current: 15A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Type of transistor: IGBT
Power dissipation: 100W
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 92nC
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Pulsed collector current: 60A
Collector current: 15A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| IKW15N120BH6XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT 1200 V 15A TO247-3-46
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 340 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/240ns
Switching Energy: 700µJ (on), 550µJ (off)
Test Condition: 600V, 15A, 22Ohm, 15V
Gate Charge: 92 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 200 W
Description: IGBT 1200 V 15A TO247-3-46
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 340 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/240ns
Switching Energy: 700µJ (on), 550µJ (off)
Test Condition: 600V, 15A, 22Ohm, 15V
Gate Charge: 92 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 200 W
Produkt ist nicht verfügbar
| IKW15N120BH6XKSA1 |
|
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 1200V 30A 200000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 30A 200000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| IKW15N120H3FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Mounting: THT
Case: TO247-3
Manufacturer series: H3
Kind of package: tube
Type of transistor: IGBT
Power dissipation: 217W
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 75nC
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Pulsed collector current: 60A
Collector current: 30A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Mounting: THT
Case: TO247-3
Manufacturer series: H3
Kind of package: tube
Type of transistor: IGBT
Power dissipation: 217W
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 75nC
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Pulsed collector current: 60A
Collector current: 30A
Produkt ist nicht verfügbar