Suchergebnisse für "4n80" : > 60

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ABM14N-80.0000MHZ-8-N1V ABM14N-80.0000MHZ-8-N1V ABRACON ABM14N-3531874.pdf Crystals MHz Crystal 1008 4-SMD 80MHz +/-12ppm -30C - 85C
auf Bestellung 1000 Stücke:
Lieferzeit 150-154 Tag (e)
1+3.31 EUR
10+2.85 EUR
100+2.46 EUR
500+2.20 EUR
1000+2.13 EUR
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FQB4N80TM FQB4N80TM onsemi / Fairchild fqi4n80-d.pdf MOSFETs 800V N-Channel QFET
auf Bestellung 1598 Stücke:
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1+4.03 EUR
10+2.80 EUR
100+2.08 EUR
250+2.06 EUR
500+2.01 EUR
800+1.60 EUR
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FQB4N80TM FQB4N80TM onsemi fqi4n80-d.pdf Description: MOSFET N-CH 800V 3.9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.95A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
auf Bestellung 800 Stücke:
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800+1.58 EUR
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FQB4N80TM FQB4N80TM onsemi fqi4n80-d.pdf Description: MOSFET N-CH 800V 3.9A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.95A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
auf Bestellung 1073 Stücke:
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10+3.19 EUR
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FQI4N80TU FQI4N80TU Fairchild Semiconductor FAIRS46000-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 3.9A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.95A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
auf Bestellung 1550 Stücke:
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FQP4N80 FQP4N80 ONSEMI fqp4n80-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 10 Stücke:
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10+7.15 EUR
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FQP4N80 FQP4N80 ONSEMI fqp4n80-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.15 EUR
12+5.96 EUR
33+2.17 EUR
250+1.33 EUR
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FQPF4N80 FQPF4N80 Fairchild Semiconductor FAIRS09674-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 2.2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
auf Bestellung 334 Stücke:
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334+1.52 EUR
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IXFH14N80P IXFH14N80P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_14n80p_datasheet.pdf.pdf Description: MOSFET N-CH 800V 14A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 500mA, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
auf Bestellung 628 Stücke:
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2+13.06 EUR
30+8.09 EUR
120+6.95 EUR
510+6.74 EUR
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IXFH14N80P IXFH14N80P IXYS media-3319887.pdf MOSFETs DIODE Id14 BVdass800
auf Bestellung 251 Stücke:
Lieferzeit 332-336 Tag (e)
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10+11.44 EUR
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IXFH24N80P IXFH24N80P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_24n80p_datasheet.pdf.pdf Description: MOSFET N-CH 800V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 12A, 10V
Power Dissipation (Max): 650W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
auf Bestellung 190 Stücke:
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30+11.01 EUR
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IXFH24N80P IXFH24N80P IXYS media-3319533.pdf MOSFETs DIODE Id24 BVdass800
auf Bestellung 473 Stücke:
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1+13.36 EUR
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IXFK24N80P IXFK24N80P IXYS IXFH(K,T)24N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 4 Stücke:
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4+17.88 EUR
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IXFK24N80P IXFK24N80P IXYS IXFH(K,T)24N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
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5+14.30 EUR
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IXFK44N80P IXFK44N80P IXYS IXFK(X)44N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 284 Stücke:
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IXFK44N80P IXFK44N80P IXYS IXFK(X)44N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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IXFK44N80P IXFK44N80P IXYS media-3319391.pdf MOSFETs 44 Amps 800V
auf Bestellung 282 Stücke:
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IXFK44N80P IXFK44N80P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_44n80p_datasheet.pdf.pdf Description: MOSFET N-CH 800V 44A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 22A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
auf Bestellung 516 Stücke:
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1+33.39 EUR
25+22.57 EUR
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IXFK44N80Q3 IXFK44N80Q3 IXYS IXFK(X)44N80Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 24 Stücke:
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2+40.91 EUR
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IXFK44N80Q3 IXFK44N80Q3 IXYS IXFK(X)44N80Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
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2+40.91 EUR
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IXFN44N80P IXFN44N80P IXYS IXFN44N80P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 39A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.19Ω
Pulsed drain current: 100A
Power dissipation: 694W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 200nC
Kind of channel: enhancement
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IXFN44N80P IXFN44N80P IXYS IXFN44N80P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 39A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.19Ω
Pulsed drain current: 100A
Power dissipation: 694W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 200nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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IXFN44N80P IXFN44N80P IXYS media-3319570.pdf description MOSFET Modules 36 Amps 800V
auf Bestellung 179 Stücke:
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IXFN44N80P IXFN44N80P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn44n80p_datasheet.pdf.pdf description Description: MOSFET N-CH 800V 39A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 500mA, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
auf Bestellung 243 Stücke:
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1+36.27 EUR
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IXFR24N80P IXFR24N80P IXYS IXFR24N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
5+17.12 EUR
6+12.23 EUR
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IXFR24N80P IXFR24N80P IXYS IXFR24N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
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6+12.23 EUR
7+11.57 EUR
10+11.55 EUR
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IXFR44N80P IXFR44N80P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr44n80p_datasheet.pdf.pdf Description: MOSFET N-CH 800V 25A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 22A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
auf Bestellung 240 Stücke:
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IXFT14N80P IXFT14N80P IXYS IXFH(Q,T)14N80P_S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO268
On-state resistance: 720mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.64 EUR
10+7.25 EUR
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IXFT14N80P IXFT14N80P IXYS IXFH(Q,T)14N80P_S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO268
On-state resistance: 720mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 47 Stücke:
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10+7.25 EUR
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IXFX44N80P IXFX44N80P IXYS media-3319391.pdf MOSFETs 44 Amps 800V
auf Bestellung 679 Stücke:
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IXTP4N80P IXTP4N80P IXYS IXTA(P)4N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 560ns
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IXTP4N80P IXTP4N80P IXYS IXTA(P)4N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 560ns
Anzahl je Verpackung: 1 Stücke
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IXTP4N80P IXTP4N80P IXYS media-3320704.pdf MOSFETs 3.5 Amps 800V 3 Rds
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10+3.59 EUR
100+3.08 EUR
250+2.64 EUR
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MSJU04N80A-TP MSJU04N80A-TP Micro Commercial Co MSJU04N80A(DPAK).pdf Description: N-CHANNEL MOSFET,DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Power Dissipation (Max): 88W (Tj)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 396 pF @ 100 V
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MSJU04N80A-TP MSJU04N80A-TP Micro Commercial Co MSJU04N80A(DPAK).pdf Description: N-CHANNEL MOSFET,DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Power Dissipation (Max): 88W (Tj)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 396 pF @ 100 V
auf Bestellung 4682 Stücke:
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SIHA24N80AE-GE3 SIHA24N80AE-GE3 Vishay / Siliconix siha24n80ae.pdf MOSFETs N-CHANNEL 800V E Series Pwr MOSFET
auf Bestellung 861 Stücke:
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1+4.79 EUR
10+4.73 EUR
50+3.15 EUR
100+2.97 EUR
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1000+2.69 EUR
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SIHA24N80AE-GE3 SIHA24N80AE-GE3 Vishay Siliconix siha24n80ae.pdf Description: MOSFET N-CH 800V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
auf Bestellung 752 Stücke:
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SIHB24N80AE-GE3 SIHB24N80AE-GE3 Vishay / Siliconix sihb24n80ae.pdf MOSFETs N-CHANNEL 800V E Series Pwr MOSFET
auf Bestellung 1167 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.34 EUR
10+5.17 EUR
50+3.87 EUR
100+3.52 EUR
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1000+2.76 EUR
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SIHB24N80AE-GE3 SIHB24N80AE-GE3 Vishay Siliconix sihb24n80ae.pdf Description: MOSFET N-CH 800V 21A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
auf Bestellung 1036 Stücke:
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3+7.62 EUR
50+3.92 EUR
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500+2.94 EUR
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SIHD4N80E-GE3 SIHD4N80E-GE3 Vishay Semiconductors sihd4n80e.pdf MOSFETs 800V Vds 30V Vgs DPAK (TO-252)
auf Bestellung 2071 Stücke:
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1+2.90 EUR
10+1.87 EUR
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500+1.24 EUR
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SIHD4N80E-GE3 SIHD4N80E-GE3 Vishay Siliconix sihd4n80e.pdf Description: MOSFET N-CH 800V 4.3A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 100 V
auf Bestellung 1999 Stücke:
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SIHG24N80AE-GE3 SIHG24N80AE-GE3 Vishay Siliconix sihg24n80ae.pdf Description: MOSFET N-CH 800V 21A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
auf Bestellung 460 Stücke:
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SIHG24N80AE-GE3 SIHG24N80AE-GE3 Vishay / Siliconix sihg24n80ae.pdf MOSFETs N-CHANNEL 800V E Series Pwr MOSFET
auf Bestellung 683 Stücke:
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1+7.27 EUR
10+5.23 EUR
25+4.65 EUR
100+3.85 EUR
250+3.78 EUR
500+3.27 EUR
1000+3.19 EUR
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SIHG24N80AEF-GE3 SIHG24N80AEF-GE3 Vishay Siliconix sihg24n80aef.pdf Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1889 pF @ 100 V
auf Bestellung 372 Stücke:
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SIHG24N80AEF-GE3 SIHG24N80AEF-GE3 Vishay / Siliconix sihg24n80aef.pdf MOSFETs TO247 800V 20A N-CH MOSFET
auf Bestellung 1407 Stücke:
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1+8.22 EUR
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25+5.72 EUR
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2500+3.80 EUR
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SIHP24N80AE-GE3 SIHP24N80AE-GE3 VISHAY sihp24n80ae.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 51A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 51A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 949 Stücke:
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18+3.98 EUR
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SIHP24N80AE-GE3 SIHP24N80AE-GE3 VISHAY sihp24n80ae.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 51A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 51A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 949 Stücke:
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18+3.98 EUR
21+3.52 EUR
23+3.23 EUR
24+3.06 EUR
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500+2.93 EUR
Mindestbestellmenge: 18
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SIHP24N80AE-GE3 SIHP24N80AE-GE3 Vishay Siliconix sihp24n80ae.pdf Description: MOSFET N-CH 800V 21A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
auf Bestellung 115 Stücke:
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3+7.29 EUR
10+4.79 EUR
100+3.38 EUR
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SIHP24N80AE-GE3 SIHP24N80AE-GE3 Vishay / Siliconix sihp24n80ae.pdf MOSFETs N-CHANNEL 800V TO-220AB
auf Bestellung 6554 Stücke:
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1+5.30 EUR
10+3.96 EUR
100+3.19 EUR
250+3.10 EUR
500+2.89 EUR
1000+2.78 EUR
2000+2.75 EUR
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SIHP24N80AEF-GE3 SIHP24N80AEF-GE3 VISHAY sihp24n80aef.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 46A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Pulsed drain current: 46A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.195Ω
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 437 Stücke:
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SIHP24N80AEF-GE3 SIHP24N80AEF-GE3 VISHAY sihp24n80aef.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 46A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Pulsed drain current: 46A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.195Ω
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 437 Stücke:
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15+4.89 EUR
17+4.46 EUR
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25+2.92 EUR
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1000+2.80 EUR
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SIHP24N80AEF-GE3 SIHP24N80AEF-GE3 Vishay Siliconix sihp24n80aef.pdf Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1889 pF @ 100 V
auf Bestellung 873 Stücke:
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SIHP24N80AEF-GE3 SIHP24N80AEF-GE3 Vishay / Siliconix sihp24n80aef.pdf MOSFETs TO220 800V 20A N-CH MOSFET
auf Bestellung 1838 Stücke:
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1+5.83 EUR
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SIHP4N80E-BE3 SIHP4N80E-BE3 Vishay / Siliconix sihp4n80e.pdf MOSFETs TO220 800V 4.3A N-CH MOSFET
auf Bestellung 25653 Stücke:
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1+3.85 EUR
10+2.85 EUR
100+2.09 EUR
250+2.04 EUR
500+1.69 EUR
1000+1.47 EUR
2000+1.46 EUR
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SIHP4N80E-BE3 SIHP4N80E-BE3 Vishay Siliconix sihp4n80e.pdf Description: N-CHANNEL 600V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 100 V
auf Bestellung 990 Stücke:
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100+2.11 EUR
500+1.70 EUR
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SIHU4N80AE-GE3 SIHU4N80AE-GE3 Vishay Semiconductors sihu4n80e.pdf MOSFETs Nch 800V Vds 30V Vgs TO-251
auf Bestellung 2920 Stücke:
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1+2.89 EUR
10+2.11 EUR
100+1.56 EUR
500+1.25 EUR
1000+1.14 EUR
3000+1.06 EUR
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SIHU4N80AE-GE3 SIHU4N80AE-GE3 Vishay Siliconix sihu4n80e.pdf Description: MOSFET N-CH 800V 4.3A IPAK
Packaging: Tube
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 100 V
auf Bestellung 2994 Stücke:
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5+3.64 EUR
10+2.32 EUR
100+1.58 EUR
500+1.26 EUR
1000+1.15 EUR
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SPD04N80C3ATMA1 SPD04N80C3ATMA1 Infineon Technologies Infineon-SPD04N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1a316bac1952 Description: MOSFET N-CH 800V 4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
auf Bestellung 10500 Stücke:
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5+3.66 EUR
10+2.34 EUR
100+1.59 EUR
500+1.27 EUR
1000+1.17 EUR
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SPD04N80C3ATMA1 SPD04N80C3ATMA1 Infineon Technologies Infineon_SPD04N80C3_DataSheet_v02_94_EN-3363800.pdf MOSFETs LOW POWER_LEGACY
auf Bestellung 2714 Stücke:
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2+2.02 EUR
10+1.52 EUR
100+1.27 EUR
250+1.26 EUR
500+1.14 EUR
2500+1.07 EUR
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SPD04N80C3ATMA1 SPD04N80C3ATMA1 Infineon Technologies Infineon-SPD04N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1a316bac1952 Description: MOSFET N-CH 800V 4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.08 EUR
5000+1.03 EUR
Mindestbestellmenge: 2500
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ABM14N-80.0000MHZ-8-N1V ABM14N-3531874.pdf
ABM14N-80.0000MHZ-8-N1V
Hersteller: ABRACON
Crystals MHz Crystal 1008 4-SMD 80MHz +/-12ppm -30C - 85C
auf Bestellung 1000 Stücke:
Lieferzeit 150-154 Tag (e)
Anzahl Preis
1+3.31 EUR
10+2.85 EUR
100+2.46 EUR
500+2.20 EUR
1000+2.13 EUR
2000+1.97 EUR
5000+1.87 EUR
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FQB4N80TM fqi4n80-d.pdf
FQB4N80TM
Hersteller: onsemi / Fairchild
MOSFETs 800V N-Channel QFET
auf Bestellung 1598 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.03 EUR
10+2.80 EUR
100+2.08 EUR
250+2.06 EUR
500+2.01 EUR
800+1.60 EUR
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FQB4N80TM fqi4n80-d.pdf
FQB4N80TM
Hersteller: onsemi
Description: MOSFET N-CH 800V 3.9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.95A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.58 EUR
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FQB4N80TM fqi4n80-d.pdf
FQB4N80TM
Hersteller: onsemi
Description: MOSFET N-CH 800V 3.9A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.95A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
auf Bestellung 1073 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.93 EUR
10+3.19 EUR
100+2.21 EUR
Mindestbestellmenge: 4
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FQI4N80TU FAIRS46000-1.pdf?t.download=true&u=5oefqw
FQI4N80TU
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 800V 3.9A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.95A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
auf Bestellung 1550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
286+1.77 EUR
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FQP4N80 fqp4n80-d.pdf
FQP4N80
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
Mindestbestellmenge: 10
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FQP4N80 fqp4n80-d.pdf
FQP4N80
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.15 EUR
12+5.96 EUR
33+2.17 EUR
250+1.33 EUR
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FQPF4N80 FAIRS09674-1.pdf?t.download=true&u=5oefqw
FQPF4N80
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 800V 2.2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
auf Bestellung 334 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
334+1.52 EUR
Mindestbestellmenge: 334
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IXFH14N80P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_14n80p_datasheet.pdf.pdf
IXFH14N80P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 800V 14A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 500mA, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
auf Bestellung 628 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.06 EUR
30+8.09 EUR
120+6.95 EUR
510+6.74 EUR
Mindestbestellmenge: 2
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IXFH14N80P media-3319887.pdf
IXFH14N80P
Hersteller: IXYS
MOSFETs DIODE Id14 BVdass800
auf Bestellung 251 Stücke:
Lieferzeit 332-336 Tag (e)
Anzahl Preis
1+12.88 EUR
10+11.44 EUR
30+10.01 EUR
120+8.62 EUR
270+7.92 EUR
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IXFH24N80P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_24n80p_datasheet.pdf.pdf
IXFH24N80P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 800V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 12A, 10V
Power Dissipation (Max): 650W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.46 EUR
30+11.01 EUR
Mindestbestellmenge: 2
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IXFH24N80P media-3319533.pdf
IXFH24N80P
Hersteller: IXYS
MOSFETs DIODE Id24 BVdass800
auf Bestellung 473 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+13.36 EUR
30+11.95 EUR
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IXFK24N80P IXFH(K,T)24N80P.pdf
IXFK24N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
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IXFK24N80P IXFH(K,T)24N80P.pdf
IXFK24N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+17.88 EUR
5+14.30 EUR
Mindestbestellmenge: 4
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IXFK44N80P IXFK(X)44N80P.pdf
IXFK44N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.31 EUR
25+20.92 EUR
Mindestbestellmenge: 4
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IXFK44N80P IXFK(X)44N80P.pdf
IXFK44N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 284 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+21.31 EUR
25+20.92 EUR
Mindestbestellmenge: 4
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IXFK44N80P media-3319391.pdf
IXFK44N80P
Hersteller: IXYS
MOSFETs 44 Amps 800V
auf Bestellung 282 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+33.14 EUR
10+30.15 EUR
25+23.80 EUR
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IXFK44N80P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_44n80p_datasheet.pdf.pdf
IXFK44N80P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 800V 44A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 22A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
auf Bestellung 516 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+33.39 EUR
25+22.57 EUR
100+21.92 EUR
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IXFK44N80Q3 IXFK(X)44N80Q3.pdf
IXFK44N80Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+40.91 EUR
Mindestbestellmenge: 2
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IXFK44N80Q3 IXFK(X)44N80Q3.pdf
IXFK44N80Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+40.91 EUR
Mindestbestellmenge: 2
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IXFN44N80P description IXFN44N80P.pdf
IXFN44N80P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 39A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.19Ω
Pulsed drain current: 100A
Power dissipation: 694W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 200nC
Kind of channel: enhancement
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+37.29 EUR
3+35.26 EUR
Mindestbestellmenge: 2
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IXFN44N80P description IXFN44N80P.pdf
IXFN44N80P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 39A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.19Ω
Pulsed drain current: 100A
Power dissipation: 694W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 200nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+37.29 EUR
3+35.26 EUR
Mindestbestellmenge: 2
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IXFN44N80P description media-3319570.pdf
IXFN44N80P
Hersteller: IXYS
MOSFET Modules 36 Amps 800V
auf Bestellung 179 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+39.37 EUR
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IXFN44N80P description littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn44n80p_datasheet.pdf.pdf
IXFN44N80P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 800V 39A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 500mA, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
auf Bestellung 243 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+36.27 EUR
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IXFR24N80P IXFR24N80P.pdf
IXFR24N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+17.12 EUR
6+12.23 EUR
7+11.57 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXFR24N80P IXFR24N80P.pdf
IXFR24N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+17.12 EUR
6+12.23 EUR
7+11.57 EUR
10+11.55 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXFR44N80P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr44n80p_datasheet.pdf.pdf
IXFR44N80P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 800V 25A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 22A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+35.31 EUR
30+23.54 EUR
120+23.49 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFT14N80P IXFH(Q,T)14N80P_S.pdf
IXFT14N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO268
On-state resistance: 720mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.64 EUR
10+7.25 EUR
30+7.14 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXFT14N80P IXFH(Q,T)14N80P_S.pdf
IXFT14N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO268
On-state resistance: 720mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 47 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
8+9.64 EUR
10+7.25 EUR
30+7.14 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXFX44N80P media-3319391.pdf
IXFX44N80P
Hersteller: IXYS
MOSFETs 44 Amps 800V
auf Bestellung 679 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+33.83 EUR
10+30.06 EUR
30+23.72 EUR
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IXTP4N80P IXTA(P)4N80P.pdf
IXTP4N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 560ns
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.27 EUR
40+1.83 EUR
42+1.73 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IXTP4N80P IXTA(P)4N80P.pdf
IXTP4N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 560ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 66 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
22+3.27 EUR
40+1.83 EUR
42+1.73 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IXTP4N80P media-3320704.pdf
IXTP4N80P
Hersteller: IXYS
MOSFETs 3.5 Amps 800V 3 Rds
auf Bestellung 266 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.86 EUR
10+3.59 EUR
100+3.08 EUR
250+2.64 EUR
500+2.60 EUR
1000+2.55 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MSJU04N80A-TP MSJU04N80A(DPAK).pdf
MSJU04N80A-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Power Dissipation (Max): 88W (Tj)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 396 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.11 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
MSJU04N80A-TP MSJU04N80A(DPAK).pdf
MSJU04N80A-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Power Dissipation (Max): 88W (Tj)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 396 pF @ 100 V
auf Bestellung 4682 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.98 EUR
10+2.55 EUR
100+1.74 EUR
500+1.39 EUR
1000+1.28 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SIHA24N80AE-GE3 siha24n80ae.pdf
SIHA24N80AE-GE3
Hersteller: Vishay / Siliconix
MOSFETs N-CHANNEL 800V E Series Pwr MOSFET
auf Bestellung 861 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.79 EUR
10+4.73 EUR
50+3.15 EUR
100+2.97 EUR
500+2.71 EUR
1000+2.69 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHA24N80AE-GE3 siha24n80ae.pdf
SIHA24N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
auf Bestellung 752 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.44 EUR
50+3.83 EUR
100+3.48 EUR
500+2.86 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SIHB24N80AE-GE3 sihb24n80ae.pdf
SIHB24N80AE-GE3
Hersteller: Vishay / Siliconix
MOSFETs N-CHANNEL 800V E Series Pwr MOSFET
auf Bestellung 1167 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.34 EUR
10+5.17 EUR
50+3.87 EUR
100+3.52 EUR
500+2.90 EUR
1000+2.76 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHB24N80AE-GE3 sihb24n80ae.pdf
SIHB24N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 21A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
auf Bestellung 1036 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.62 EUR
50+3.92 EUR
100+3.56 EUR
500+2.94 EUR
1000+2.73 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SIHD4N80E-GE3 sihd4n80e.pdf
SIHD4N80E-GE3
Hersteller: Vishay Semiconductors
MOSFETs 800V Vds 30V Vgs DPAK (TO-252)
auf Bestellung 2071 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.90 EUR
10+1.87 EUR
100+1.28 EUR
500+1.24 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHD4N80E-GE3 sihd4n80e.pdf
SIHD4N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 4.3A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 100 V
auf Bestellung 1999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.94 EUR
10+1.89 EUR
100+1.29 EUR
500+1.19 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
SIHG24N80AE-GE3 sihg24n80ae.pdf
SIHG24N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 21A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
auf Bestellung 460 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.45 EUR
25+4.85 EUR
100+3.99 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SIHG24N80AE-GE3 sihg24n80ae.pdf
SIHG24N80AE-GE3
Hersteller: Vishay / Siliconix
MOSFETs N-CHANNEL 800V E Series Pwr MOSFET
auf Bestellung 683 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.27 EUR
10+5.23 EUR
25+4.65 EUR
100+3.85 EUR
250+3.78 EUR
500+3.27 EUR
1000+3.19 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHG24N80AEF-GE3 sihg24n80aef.pdf
SIHG24N80AEF-GE3
Hersteller: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1889 pF @ 100 V
auf Bestellung 372 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.63 EUR
10+6.43 EUR
100+4.62 EUR
Mindestbestellmenge: 2
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SIHG24N80AEF-GE3 sihg24n80aef.pdf
SIHG24N80AEF-GE3
Hersteller: Vishay / Siliconix
MOSFETs TO247 800V 20A N-CH MOSFET
auf Bestellung 1407 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.22 EUR
10+5.74 EUR
25+5.72 EUR
100+4.58 EUR
250+4.56 EUR
500+4.29 EUR
2500+3.80 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHP24N80AE-GE3 sihp24n80ae.pdf
SIHP24N80AE-GE3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 51A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 51A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 949 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+3.98 EUR
21+3.52 EUR
23+3.23 EUR
24+3.06 EUR
100+2.95 EUR
500+2.93 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
SIHP24N80AE-GE3 sihp24n80ae.pdf
SIHP24N80AE-GE3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 51A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 51A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 949 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
18+3.98 EUR
21+3.52 EUR
23+3.23 EUR
24+3.06 EUR
100+2.95 EUR
500+2.93 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
SIHP24N80AE-GE3 sihp24n80ae.pdf
SIHP24N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 21A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
auf Bestellung 115 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.29 EUR
10+4.79 EUR
100+3.38 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SIHP24N80AE-GE3 sihp24n80ae.pdf
SIHP24N80AE-GE3
Hersteller: Vishay / Siliconix
MOSFETs N-CHANNEL 800V TO-220AB
auf Bestellung 6554 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.30 EUR
10+3.96 EUR
100+3.19 EUR
250+3.10 EUR
500+2.89 EUR
1000+2.78 EUR
2000+2.75 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHP24N80AEF-GE3 sihp24n80aef.pdf
SIHP24N80AEF-GE3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 46A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Pulsed drain current: 46A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.195Ω
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 437 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.89 EUR
17+4.46 EUR
24+3.09 EUR
25+2.92 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
SIHP24N80AEF-GE3 sihp24n80aef.pdf
SIHP24N80AEF-GE3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 46A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Pulsed drain current: 46A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.195Ω
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 437 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
15+4.89 EUR
17+4.46 EUR
24+3.09 EUR
25+2.92 EUR
500+2.86 EUR
1000+2.80 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
SIHP24N80AEF-GE3 sihp24n80aef.pdf
SIHP24N80AEF-GE3
Hersteller: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1889 pF @ 100 V
auf Bestellung 873 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.91 EUR
10+3.92 EUR
100+3.09 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SIHP24N80AEF-GE3 sihp24n80aef.pdf
SIHP24N80AEF-GE3
Hersteller: Vishay / Siliconix
MOSFETs TO220 800V 20A N-CH MOSFET
auf Bestellung 1838 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.83 EUR
10+3.87 EUR
100+3.20 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHP4N80E-BE3 sihp4n80e.pdf
SIHP4N80E-BE3
Hersteller: Vishay / Siliconix
MOSFETs TO220 800V 4.3A N-CH MOSFET
auf Bestellung 25653 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.85 EUR
10+2.85 EUR
100+2.09 EUR
250+2.04 EUR
500+1.69 EUR
1000+1.47 EUR
2000+1.46 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHP4N80E-BE3 sihp4n80e.pdf
SIHP4N80E-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 100 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.73 EUR
10+3.06 EUR
100+2.11 EUR
500+1.70 EUR
Mindestbestellmenge: 4
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SIHU4N80AE-GE3 sihu4n80e.pdf
SIHU4N80AE-GE3
Hersteller: Vishay Semiconductors
MOSFETs Nch 800V Vds 30V Vgs TO-251
auf Bestellung 2920 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.89 EUR
10+2.11 EUR
100+1.56 EUR
500+1.25 EUR
1000+1.14 EUR
3000+1.06 EUR
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SIHU4N80AE-GE3 sihu4n80e.pdf
SIHU4N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 4.3A IPAK
Packaging: Tube
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 100 V
auf Bestellung 2994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.64 EUR
10+2.32 EUR
100+1.58 EUR
500+1.26 EUR
1000+1.15 EUR
Mindestbestellmenge: 5
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SPD04N80C3ATMA1 Infineon-SPD04N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1a316bac1952
SPD04N80C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.66 EUR
10+2.34 EUR
100+1.59 EUR
500+1.27 EUR
1000+1.17 EUR
Mindestbestellmenge: 5
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SPD04N80C3ATMA1 Infineon_SPD04N80C3_DataSheet_v02_94_EN-3363800.pdf
SPD04N80C3ATMA1
Hersteller: Infineon Technologies
MOSFETs LOW POWER_LEGACY
auf Bestellung 2714 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.02 EUR
10+1.52 EUR
100+1.27 EUR
250+1.26 EUR
500+1.14 EUR
2500+1.07 EUR
Mindestbestellmenge: 2
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SPD04N80C3ATMA1 Infineon-SPD04N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1a316bac1952
SPD04N80C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.08 EUR
5000+1.03 EUR
Mindestbestellmenge: 2500
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