Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: TO-220AB
Drain-Source-Spannung Uds, V: 100 V
Drain-Strom Idd, A: 33 A
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1960/71
Montage: THT

Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: D2PAK (TO-263)
Drain-Source-Spannung Uds, V: 100 В
Drain-Strom Idd, A: 33 А
Durchlasswiderstand Rds(on), Ohm: 44 мОм
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1960/71
Montage: SMD

Hersteller: Siliconix
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Drain-Source-Spannung Uds, V: 100 В
Drain-Strom Idd, A: 28 А
Durchlasswiderstand Rds(on), Ohm: 0,077 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1700/72
Montage: THT

Hersteller: SILI
Transistoren > MOSFET N-CH
Gehäuse: TO-263
Drain-Source-Spannung Uds, V: 100 В
Drain-Strom Idd, A: 20 А
Durchlasswiderstand Rds(on), Ohm: 0,07 Ом
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1700/72
Montage: SMD

Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Drain-Source-Spannung Uds, V: 100 V
Drain-Strom Idd, A: 36 A
Durchlasswiderstand Rds(on), Ohm: 0,0266 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1770/42
Montage: THT

Modulare Elemente > Arduino und andere modulare Elemente
Beschreibung: Shield zur Laststeuerung. Das Modul besteht aus 4x MOSFET IRF540. Außerdem ist auf der Platine der IC PS8201 (Optokoppler) zur Trennung des Controllers von der Last verbaut. Kann nur zur Steuerung eines Gleichstromkreises verwendet werden. Last maximal: 9...100VDC (25A). Steuersignal vom MC: 5V.
Kategorie: Schaltmodul
Bestimmung: MOSFET

Hersteller: Vishay
Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden
Gehäuse: DO-201AD
Urev., V: 100 V
Iausr., A: 3 A
Beschreibung: Gleichrichter
Montage: THT
Spannungsabfall Vf: 1 В

Dioden, Diodenbrücken, Zenerdioden > Dioden superschnelle
Gehäuse: DO-201AD
Sperrspannung Vrr, V: 200 В
Mittlerer Strom Iav, A: 3 А
Sperrverzögerungszeit Trr, ns: 50 ns
Montage: THT

Hersteller: Yangjie/MIC
Dioden, Diodenbrücken, Zenerdioden > Dioden superschnelle
Gehäuse: DO-201AD
Sperrspannung Vrr, V: 1000 V
Mittlerer Strom Iav, A: 3 A
Sperrverzögerungszeit Trr, ns: 75 ns
Montage: THT

Hersteller: TE Connectivity
Hexa Shield ADAPTER

Hersteller: TE Connectivity
Hexa Shield ADAPTER

Hersteller: TE CONNECTIVITY / PARTNER STOCK
Description: TE CONNECTIVITY / PARTNER STOCK - F54019-000 - CONNECTOR ACCESSORY, ALUMINUM ALLOY
tariffCode: 85423390
productTraceability: No
rohsCompliant: YES
euEccn: NLR
isCanonical: Y
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: To Be Advised

Hersteller: Honeywell
Industrial Potentiometer

Hersteller: FSC
DIP14

Hersteller: IR
TO

Hersteller: Fairchild Semiconductor
Description: IC BUFF 4.5V/5.5V 20-PDIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: 3-State
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 3mA, 64mA
Supplier Device Package: 20-PDIP

Hersteller: Fairchild Semiconductor
Description: IC BUFF 4.5V/5.5V 20-SOP
Packaging: Tube
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 3mA, 64mA
Supplier Device Package: 20-SOP

Hersteller: Fairchild Semiconductor
Description: IC BUFF 4.5V/5.5V 20-SOP
Packaging: Bulk
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 3mA, 64mA
Supplier Device Package: 20-SOP

Hersteller: KEMET
Category: Motor capacitors
Description: Capacitor: polypropylene; motors, run; 40uF; 470VAC; Ø50x120mm
Manufacturer series: C27
Service life: 10000h
Operating temperature: -25...85°C
Climate class: 25/085/21
Capacitor application: motors, run
Leads: cables
Body dimensions: Ø50x120mm
Type of capacitor: polypropylene
Mounting: M8 screw
Capacitance: 40µF
Height: 120mm
Lead length: 40mm
Operating voltage: 470V AC
Tolerance: ±5%
Diameter: 50mm

Hersteller: KEMET
Motor Start Capacitors & Motor Run Capacitors 470VAC 40uF 5% With M8 Bolt 10K Hrs

Hersteller: KEMET
Category: Motor capacitors
Description: Capacitor: polypropylene; motors, run; 40uF; 420VAC; Ø45x95mm; ±5%
Manufacturer series: C27
Service life: 10000h
Operating temperature: -25...85°C
Climate class: 25/085/21
Capacitor application: motors, run
Leads: cables
Body dimensions: Ø45x95mm
Type of capacitor: polypropylene
Mounting: M8 screw
Capacitance: 40µF
Height: 95mm
Lead length: 40mm
Operating voltage: 420V AC
Tolerance: ±5%
Diameter: 45mm

Hersteller: Siliconix
N-MOSFET 27A 100V 125W 0.052Ω Replacement: STP30NF10 IRF540 TIRF540
Anzahl je Verpackung: 50 Stücke

Hersteller: Infineon
Tranzystor N-Channel MOSFET; 100V; 20V; 44mOhm; 33A; 130W; -55°C ~ 175°C; Odpowiednik: IRF540N; IRF 540 N ; IRF540N; IRF540N TIRF540n
Anzahl je Verpackung: 50 Stücke

Hersteller: JSMicro Semiconductor
Transistor N-Channel MOSFET; 100V; 20V; 26mOhm; 40A; 96W; -55°C ~ 150°C; Equivalent: IRF540; IRF540-BE3; IRF540N; SP001561906; IRF540N JSMICRO TIRF540n JSM
Anzahl je Verpackung: 25 Stücke

Hersteller: CHIPNOBO
Transistor N-Channel MOSFET; 100V; 20V; 20mOhm; 60A; 96W; -55°C ~ 150°C; Equivalent: IRF540; IRF540-BE3; IRF540N; SP001561906; IRF540N-CN CHIPNOBO TIRF540n CNB
Anzahl je Verpackung: 25 Stücke

Hersteller: MOSLEADER
Transistor N-Channel MOSFET; 100V; 20V; 50mOhm; 30A; 125W; -55°C ~ 175°C; Equivalent: IRF540; IRF540-BE3; IRF540N; SP001561906; IRF540N-ML MOSLEADER TIRF540n MOS
Anzahl je Verpackung: 25 Stücke

Hersteller: MOSLEADER
Transistor N-Channel MOSFET; 100V; 20V; 50mOhm; 30A; 125W; -55°C ~ 175°C; Equivalent: IRF540; IRF540-BE3; IRF540N; SP001561906; IRF540N-ML MOSLEADER TIRF540n MOS
Anzahl je Verpackung: 25 Stücke

Hersteller: International Rectifier
N-MOSFET HEXFET 33A 100V 130W 0,044Ω IRF540NL TIRF540nl
Anzahl je Verpackung: 10 Stücke

Hersteller: International Rectifier
N-MOSFET HEXFET 33A 100V 130W 0,044Ω IRF540NL TIRF540nl
Anzahl je Verpackung: 10 Stücke

Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 33A
Power dissipation: 140W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 44mΩ
Gate charge: 47.3nC
Gate-source voltage: ±20V

Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 33A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V

Hersteller: JSMicro Semiconductor
Transistor N-Channel MOSFET; 100V; 20V; 38mOhm; 33A; 110W; -55°C ~ 150°C; Equivalent: IRF540NS; IRF540NSTRL; IRF540NSTRR; SP001564346; SP001563324; SP001571284; IRF540NS JSMICRO TIRF540ns JSM
Anzahl je Verpackung: 25 Stücke

Hersteller: SLKOR
Transistor N-Channel MOSFET; 100V; 20V; 38mOhm; 33A; 110W; -55°C ~ 150°C; Equivalent: IRF540NS; IRF540NSTRL; IRF540NSTRR; SP001564346; SP001563324; SP001571284; IRF540NS SLKOR TIRF540ns SLK
Anzahl je Verpackung: 25 Stücke

Hersteller: SLKOR
Transistor N-Channel MOSFET; 100V; 20V; 38mOhm; 33A; 110W; -55°C ~ 150°C; Equivalent: IRF540NS; IRF540NSTRL; IRF540NSTRR; SP001564346; SP001563324; SP001571284; IRF540NS SLKOR TIRF540ns SLK
Anzahl je Verpackung: 25 Stücke

Hersteller: International Rectifier
Transistor N-Channel MOSFET; 100V; 20V; 44mOhm; 33A; 130W; -55°C ~ 175°C; Equivalent: IRF540NS; IRF540NSTRL; IRF540NSTRR; SP001564346; SP001563324; SP001571284; IRF540NS TIRF540ns
Anzahl je Verpackung: 10 Stücke

Hersteller: UMW
Transistor N-Channel MOSFET; 100V; 20V; 44mOhm; 30A; 70W; -55°C ~ 175°C; Equivalent: IRF540NS; IRF540NSTRL; IRF540NSTRR; SP001564346; SP001563324; SP001571284; IRF540NSTRL UMW TIRF540ns UMW
Anzahl je Verpackung: 25 Stücke

Hersteller: Infineon Technologies
MOSFETs MOSFT 100V 33A 44mOhm 47.3nC

Hersteller: International Rectifier
TO263 (D2PAK) Транзистори

Hersteller: Vishay Siliconix
IRF540PBF-BE3 IRF540PBF N-MOSFET, 100V, 28A, 150W, TO220AB Транзистори

Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: D2PAK; TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 77mΩ
Pulsed drain current: 110A
Gate charge: 72nC
Gate-source voltage: ±20V

Hersteller: International Rectifier
N-MOSFET 36A 100V 92W IRF540Z TIRF540z
Anzahl je Verpackung: 50 Stücke

Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 36A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V

Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 92W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 26.5mΩ
Gate charge: 42nC
Gate-source voltage: ±20V

Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 36A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V

Hersteller: Infineon Technologies
MOSFETs MOSFT 100V 36A 26.5mOhm 42nC Qg

Hersteller: Infineon
MOSFET N-CH 100V 36A D2PAK Транзистори

Hersteller: International Rectifier
Description: AUTOMOTIVE HEXFET N-CHANNEL POWE
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-904
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

Hersteller: MIFLEX SOLUTIONS
Category: Audio polypropylene capacitors
Description: Capacitor: aluminum-polypropylene-paper; 4uF; 250VDC; ±5%; THT
Manufacturer series: KPAL03
Operating temperature: -25...70°C
Climate class: 25/70/21
Capacitor application: audio equipment
Leads: axial
Body dimensions: Ø76x70mm
Dissipation: 0.0035
Type of capacitor: aluminum-polypropylene-paper
Capacitance: 4µF
Height: 70mm
Operating voltage: 250V DC
Tolerance: ±5%
Diameter: 76mm
Mounting: THT

Hersteller: MIFLEX SOLUTIONS
Category: Audio polypropylene capacitors
Description: Capacitor: aluminum-polypropylene-paper; 4uF; 250VDC; ±5%; THT
Manufacturer series: KPAL04
Operating temperature: -25...70°C
Climate class: 25/70/21
Capacitor application: audio equipment
Leads: radial
Body dimensions: Ø76x70mm
Dissipation: 0.0035
Type of capacitor: aluminum-polypropylene-paper
Capacitance: 4µF
Height: 70mm
Operating voltage: 250V DC
Tolerance: ±5%
Diameter: 76mm
Mounting: THT

Hersteller: Xinnuo Electronics
Description: 5A/400V

Hersteller: Nexperia USA Inc.
Description: IC BUFF 4.5V/5.5V 20-DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: 3-State
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 15mA, 64mA
Supplier Device Package: 20-DIP

Hersteller: HUBER+SUHNER
RF Cable Assemblies MICROWAVE TEST ASSEMBLIES, 2.92mm (male), 2.92mm (male), 50 Ohm, 40 GHz, 24in, time delay matched +/-1ps

Hersteller: HUBER+SUHNER
RF Cable Assemblies MICROWAVE TEST ASSEMBLIES, 2.92mm (male), 2.92mm (male), 50 Ohm, 40 GHz, 36in, time delay matched +/-1ps

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V

Hersteller: Vishay Semiconductors
Rectifiers 3.0 Amp 600 Volt 150 Amp IFSM

Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 150A; SOD64; Ammo Pack; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Case: SOD64
Kind of package: Ammo Pack
Max. forward voltage: 1.7V
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Leakage current: 50µA
Reverse recovery time: 75ns

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V

Hersteller: Vishay Semiconductors
Rectifiers 3.0 Amp 1000 Volt 150 Amp IFSM