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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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STP60NF06 Produktcode: 2993
zu Favoriten hinzufügen
Lieblingsprodukt
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ST |
![]() ![]() Gehäuse: TO-220 Uds,V: 60 Idd,A: 60 Rds(on), Ohm: 0.014 Ciss, pF/Qg, nC: 1800/49 JHGF: THT ZCODE: 8541290010 |
auf Bestellung 451 Stück: Lieferzeit 21-28 Tag (e) |
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STP60NF06L Produktcode: 105102
zu Favoriten hinzufügen
Lieblingsprodukt
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ST |
![]() Uds,V: 60 V Idd,A: 60 A Rds(on), Ohm: 0,012 Ohm Ciss, pF/Qg, nC: 2000/35 JHGF: THT ZCODE: 8541290010 |
auf Bestellung 70 Stück: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
P60N02LDG |
auf Bestellung 23290 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
P60N03LD |
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
P60N03LDG | NIKO | 09+ |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
P60N03LR |
auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
P60N06 | IR | 09+ |
auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) |
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P60N06 | ST | TO-220 03+ |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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P60NE03L-10 | ST |
auf Bestellung 3150 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
P60NE06 |
auf Bestellung 3700 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
P60NE06L-16 |
auf Bestellung 20 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
P60NF03 | ST | 05+ |
auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
P60NF03L | ST | 05+ |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
P60NF06 | ST | 09+ |
auf Bestellung 1018 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
P60NF06FP |
auf Bestellung 506 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
P60NF06L | ST | TO220 03+ |
auf Bestellung 44 Stücke: Lieferzeit 21-28 Tag (e) |
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IRG8P60N120KD-EPBF | International Rectifier |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 210 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 40ns/240ns Switching Energy: 2.8mJ (on), 2.3mJ (off) Test Condition: 600V, 40A, 5Ohm, 15V Gate Charge: 345 nC Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 420 W |
auf Bestellung 8826 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFP60N25X3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 60A Power dissipation: 320W Case: TO220AB On-state resistance: 23mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Gate charge: 50nC Reverse recovery time: 95ns |
auf Bestellung 304 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP60N25X3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 60A Power dissipation: 320W Case: TO220AB On-state resistance: 23mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Gate charge: 50nC Reverse recovery time: 95ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 304 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFP60N25X3 | Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V Power Dissipation (Max): 320W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-220AB (IXFP) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V |
auf Bestellung 645 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFP60N25X3 | IXYS |
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auf Bestellung 220 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFP60N25X3M | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 60A Power dissipation: 36W Case: TO220FP On-state resistance: 23mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Gate charge: 50nC Reverse recovery time: 95ns |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP60N25X3M | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 60A Power dissipation: 36W Case: TO220FP On-state resistance: 23mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Gate charge: 50nC Reverse recovery time: 95ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFP60N25X3M | Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-220AB (IXFP) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V |
auf Bestellung 680 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFP60N25X3M | IXYS |
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auf Bestellung 270 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP60N10T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns On-state resistance: 18mΩ Type of transistor: N-MOSFET Power dissipation: 176W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 49nC Kind of channel: enhancement Mounting: THT Case: TO220AB Reverse recovery time: 59ns Drain-source voltage: 100V Drain current: 60A |
auf Bestellung 307 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP60N10T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns On-state resistance: 18mΩ Type of transistor: N-MOSFET Power dissipation: 176W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 49nC Kind of channel: enhancement Mounting: THT Case: TO220AB Reverse recovery time: 59ns Drain-source voltage: 100V Drain current: 60A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 307 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP60N10T | IXYS |
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auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP60N10T | Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V |
auf Bestellung 1605 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP60N20T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 500W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 73nC Kind of channel: enhancement Mounting: THT Case: TO220AB Reverse recovery time: 118ns Drain-source voltage: 200V Drain current: 60A |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP60N20T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 500W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 73nC Kind of channel: enhancement Mounting: THT Case: TO220AB Reverse recovery time: 118ns Drain-source voltage: 200V Drain current: 60A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 240 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP60N20T | IXYS |
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auf Bestellung 116 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP60N20T | Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V |
auf Bestellung 650 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP60N20X4 | IXYS |
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auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP60N20X4 | Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 30A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 (IXTP) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYP60N65A5 | IXYS |
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auf Bestellung 315 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYP60N65A5 | IXYS |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 36A Supplier Device Package: TO-220 (IXYP) IGBT Type: PT Td (on/off) @ 25°C: 28ns/230ns Switching Energy: 600µJ (on), 1.45mJ (off) Test Condition: 400V, 36A, 5Ohm, 15V Gate Charge: 128 nC Part Status: Active Current - Collector (Ic) (Max): 134 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 260 A Power - Max: 395 W |
auf Bestellung 202 Stücke: Lieferzeit 10-14 Tag (e) |
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LL-HP60NUYC | LUCKYLIGHT |
![]() Description: Power LED; STAR; yellow; 120°; 590nm; P: 1W; 30÷40lm LED colour: yellow Power: 1W Viewing angle: 120° Wavelength: 590nm Type of diode: power LED Luminosity: 30...40lm LED version: STAR |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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LL-HP60NUYC | LUCKYLIGHT |
![]() Description: Power LED; STAR; yellow; 120°; 590nm; P: 1W; 30÷40lm LED colour: yellow Power: 1W Viewing angle: 120° Wavelength: 590nm Type of diode: power LED Luminosity: 30...40lm LED version: STAR Anzahl je Verpackung: 1 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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LL-HP60NW6EB | LUCKYLIGHT |
![]() Description: Power LED; STAR; white warm; 120°; P: 1W; 80÷90lm LED colour: white warm Power: 1W Viewing angle: 120° Type of diode: power LED Luminosity: 80...90lm Colour temperature: 2600-4000K LED version: STAR |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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LL-HP60NW6EB | LUCKYLIGHT |
![]() Description: Power LED; STAR; white warm; 120°; P: 1W; 80÷90lm LED colour: white warm Power: 1W Viewing angle: 120° Type of diode: power LED Luminosity: 80...90lm Colour temperature: 2600-4000K LED version: STAR Anzahl je Verpackung: 1 Stücke |
auf Bestellung 28 Stücke: Lieferzeit 7-14 Tag (e) |
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LL-HP60NWEB | LUCKYLIGHT |
![]() Description: Power LED; STAR; white cold; 120°; P: 1W; 85÷100lm LED colour: white cold Power: 1W Viewing angle: 120° Type of diode: power LED Luminosity: 85...100lm Colour temperature: 4000-10000K LED version: STAR |
auf Bestellung 163 Stücke: Lieferzeit 14-21 Tag (e) |
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LL-HP60NWEB | LUCKYLIGHT |
![]() Description: Power LED; STAR; white cold; 120°; P: 1W; 85÷100lm LED colour: white cold Power: 1W Viewing angle: 120° Type of diode: power LED Luminosity: 85...100lm Colour temperature: 4000-10000K LED version: STAR Anzahl je Verpackung: 1 Stücke |
auf Bestellung 163 Stücke: Lieferzeit 7-14 Tag (e) |
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NP60N04ILF-E1-AZ | Renesas |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V Power Dissipation (Max): 1.2W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (MP-3Z) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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NP60N04VDK-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V Power Dissipation (Max): 1.2W (Ta), 105W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (MP-3ZP) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 4426 Stücke: Lieferzeit 10-14 Tag (e) |
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NP60N04VLK-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V Power Dissipation (Max): 1.2W (Ta), 105W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (MP-3ZP) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2498 Stücke: Lieferzeit 10-14 Tag (e) |
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NP60N04VUK-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V Power Dissipation (Max): 1.2W (Ta), 105W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4199 Stücke: Lieferzeit 10-14 Tag (e) |
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NP60N055VUK-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Power Dissipation (Max): 1.2W (Ta), 105W (Tc) Vgs(th) (Max) @ Id: 4V @ 253µA Supplier Device Package: TO-252-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 7973 Stücke: Lieferzeit 10-14 Tag (e) |
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NP60N055VUK-E1-AY | Renesas Electronics |
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auf Bestellung 2490 Stücke: Lieferzeit 10-14 Tag (e) |
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NP60N055VUK-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Power Dissipation (Max): 1.2W (Ta), 105W (Tc) Vgs(th) (Max) @ Id: 4V @ 253µA Supplier Device Package: TO-252-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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NP60N06VDK-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V Power Dissipation (Max): 1.2W (Ta), 105W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (MP-3ZP) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 8458 Stücke: Lieferzeit 10-14 Tag (e) |
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NP60N06VDK-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V Power Dissipation (Max): 1.2W (Ta), 105W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (MP-3ZP) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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NP60N06VDK-E1-AY | Renesas Electronics |
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auf Bestellung 260 Stücke: Lieferzeit 10-14 Tag (e) |
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NP60N06VLK-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V Power Dissipation (Max): 1.2W (Ta), 105W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (MP-3ZP) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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NP60N06VLK-E1-AY | Renesas Electronics |
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auf Bestellung 2480 Stücke: Lieferzeit 10-14 Tag (e) |
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NP60N06VLK-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V Power Dissipation (Max): 1.2W (Ta), 105W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (MP-3ZP) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 3222 Stücke: Lieferzeit 10-14 Tag (e) |
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PD30CNP60NAM5SA | Carlo Gavazzi |
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auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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STP60N043DM9 | STMicroelectronics |
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auf Bestellung 1119 Stücke: Lieferzeit 10-14 Tag (e) |
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STP60NF06 | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 252 Stücke: Lieferzeit 14-21 Tag (e) |
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STP60NF06 | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 252 Stücke: Lieferzeit 7-14 Tag (e) |
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STP60NF06 Produktcode: 2993
zu Favoriten hinzufügen
Lieblingsprodukt
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Hersteller: ST
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 60
Idd,A: 60
Rds(on), Ohm: 0.014
Ciss, pF/Qg, nC: 1800/49
JHGF: THT
ZCODE: 8541290010
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 60
Idd,A: 60
Rds(on), Ohm: 0.014
Ciss, pF/Qg, nC: 1800/49
JHGF: THT
ZCODE: 8541290010
auf Bestellung 451 Stück:
Lieferzeit 21-28 Tag (e)Anzahl | Preis |
---|---|
1+ | 0.70 EUR |
10+ | 0.67 EUR |
STP60NF06L Produktcode: 105102
zu Favoriten hinzufügen
Lieblingsprodukt
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Hersteller: ST
Transistoren > MOSFET N-CH
Uds,V: 60 V
Idd,A: 60 A
Rds(on), Ohm: 0,012 Ohm
Ciss, pF/Qg, nC: 2000/35
JHGF: THT
ZCODE: 8541290010
Transistoren > MOSFET N-CH
Uds,V: 60 V
Idd,A: 60 A
Rds(on), Ohm: 0,012 Ohm
Ciss, pF/Qg, nC: 2000/35
JHGF: THT
ZCODE: 8541290010
auf Bestellung 70 Stück:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
P60N02LDG |
auf Bestellung 23290 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
P60N03LDG |
Hersteller: NIKO
09+
09+
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
P60N03LR |
auf Bestellung 50000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
P60N06 |
Hersteller: IR
09+
09+
auf Bestellung 5030 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
P60N06 |
Hersteller: ST
TO-220 03+
TO-220 03+
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
P60NE03L-10 |
Hersteller: ST
auf Bestellung 3150 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
P60NE06L-16 |
auf Bestellung 20 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
P60NF03 |
Hersteller: ST
05+
05+
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
P60NF03L |
Hersteller: ST
05+
05+
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
P60NF06 |
Hersteller: ST
09+
09+
auf Bestellung 1018 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
P60NF06L |
Hersteller: ST
TO220 03+
TO220 03+
auf Bestellung 44 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IRG8P60N120KD-EPBF |
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Hersteller: International Rectifier
Description: IGBT 1200V 100A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 210 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/240ns
Switching Energy: 2.8mJ (on), 2.3mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 345 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 420 W
Description: IGBT 1200V 100A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 210 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/240ns
Switching Energy: 2.8mJ (on), 2.3mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 345 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 420 W
auf Bestellung 8826 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
41+ | 12.63 EUR |
IXFP60N25X3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
auf Bestellung 304 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.04 EUR |
10+ | 7.29 EUR |
11+ | 6.89 EUR |
50+ | 6.69 EUR |
IXFP60N25X3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 304 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.04 EUR |
10+ | 7.29 EUR |
11+ | 6.89 EUR |
50+ | 6.69 EUR |
IXFP60N25X3 |
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Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 250V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220AB (IXFP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V
Description: MOSFET N-CH 250V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220AB (IXFP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V
auf Bestellung 645 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 13.48 EUR |
50+ | 7.88 EUR |
100+ | 7.32 EUR |
500+ | 7.01 EUR |
IXFP60N25X3 |
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Hersteller: IXYS
MOSFETs 250V/60A Ultra Junct ion X3-Class MOSFET
MOSFETs 250V/60A Ultra Junct ion X3-Class MOSFET
auf Bestellung 220 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 13.34 EUR |
10+ | 12.65 EUR |
50+ | 8.13 EUR |
100+ | 7.60 EUR |
IXFP60N25X3M |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.34 EUR |
11+ | 6.69 EUR |
12+ | 6.32 EUR |
IXFP60N25X3M |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.34 EUR |
11+ | 6.69 EUR |
12+ | 6.32 EUR |
50+ | 6.18 EUR |
IXFP60N25X3M |
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Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 250V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220AB (IXFP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V
Description: MOSFET N-CH 250V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220AB (IXFP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V
auf Bestellung 680 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 13.55 EUR |
50+ | 7.94 EUR |
100+ | 7.38 EUR |
500+ | 7.07 EUR |
IXFP60N25X3M |
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Hersteller: IXYS
MOSFETs 250V/60A Ultra Junct ion X3-Class MOSFET
MOSFETs 250V/60A Ultra Junct ion X3-Class MOSFET
auf Bestellung 270 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 13.39 EUR |
10+ | 10.60 EUR |
50+ | 7.76 EUR |
100+ | 7.67 EUR |
IXTP60N10T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 49nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 59ns
Drain-source voltage: 100V
Drain current: 60A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 49nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 59ns
Drain-source voltage: 100V
Drain current: 60A
auf Bestellung 307 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.30 EUR |
40+ | 1.80 EUR |
43+ | 1.70 EUR |
250+ | 1.63 EUR |
IXTP60N10T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 49nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 59ns
Drain-source voltage: 100V
Drain current: 60A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 49nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 59ns
Drain-source voltage: 100V
Drain current: 60A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 307 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.30 EUR |
40+ | 1.80 EUR |
43+ | 1.70 EUR |
250+ | 1.63 EUR |
IXTP60N10T |
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Hersteller: IXYS
MOSFETs MOSFET Id60 BVdass100
MOSFETs MOSFET Id60 BVdass100
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 4.82 EUR |
10+ | 2.62 EUR |
100+ | 2.18 EUR |
500+ | 1.97 EUR |
IXTP60N10T |
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Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 100V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Description: MOSFET N-CH 100V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
auf Bestellung 1605 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 4.91 EUR |
50+ | 2.67 EUR |
100+ | 2.44 EUR |
500+ | 2.03 EUR |
1000+ | 1.92 EUR |
IXTP60N20T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 73nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 118ns
Drain-source voltage: 200V
Drain current: 60A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 73nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 118ns
Drain-source voltage: 200V
Drain current: 60A
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.88 EUR |
12+ | 6.18 EUR |
15+ | 4.93 EUR |
16+ | 4.66 EUR |
IXTP60N20T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 73nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 118ns
Drain-source voltage: 200V
Drain current: 60A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 73nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 118ns
Drain-source voltage: 200V
Drain current: 60A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 240 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.88 EUR |
12+ | 6.18 EUR |
15+ | 4.93 EUR |
16+ | 4.66 EUR |
IXTP60N20T |
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Hersteller: IXYS
MOSFETs Trench POWER MOSFETs 200v, 60A
MOSFETs Trench POWER MOSFETs 200v, 60A
auf Bestellung 116 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 9.87 EUR |
10+ | 8.89 EUR |
50+ | 5.56 EUR |
100+ | 5.21 EUR |
IXTP60N20T |
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Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 200V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
Description: MOSFET N-CH 200V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
auf Bestellung 650 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 10.03 EUR |
50+ | 5.73 EUR |
100+ | 5.30 EUR |
500+ | 4.81 EUR |
IXTP60N20X4 |
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Hersteller: IXYS
MOSFETs 200V, 60A current capacity, Ultra junction X4, TO-220 package, MOSFET
MOSFETs 200V, 60A current capacity, Ultra junction X4, TO-220 package, MOSFET
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 16.33 EUR |
10+ | 16.12 EUR |
50+ | 9.72 EUR |
100+ | 9.33 EUR |
IXTP60N20X4 |
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Hersteller: Littelfuse Inc.
Description: MOSFET ULTRA X4 200V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 30A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220 (IXTP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
Description: MOSFET ULTRA X4 200V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 30A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220 (IXTP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 16.49 EUR |
50+ | 9.82 EUR |
100+ | 9.15 EUR |
IXYP60N65A5 |
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Hersteller: IXYS
IGBTs XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO220
IGBTs XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO220
auf Bestellung 315 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 8.32 EUR |
10+ | 8.31 EUR |
50+ | 4.68 EUR |
100+ | 4.31 EUR |
500+ | 3.96 EUR |
IXYP60N65A5 |
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Hersteller: IXYS
Description: IGBT PT 650V 134A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 36A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/230ns
Switching Energy: 600µJ (on), 1.45mJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 128 nC
Part Status: Active
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 260 A
Power - Max: 395 W
Description: IGBT PT 650V 134A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 36A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/230ns
Switching Energy: 600µJ (on), 1.45mJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 128 nC
Part Status: Active
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 260 A
Power - Max: 395 W
auf Bestellung 202 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 8.40 EUR |
50+ | 4.73 EUR |
100+ | 4.36 EUR |
LL-HP60NUYC |
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Hersteller: LUCKYLIGHT
Category: Colour power LEDs - Emiter
Description: Power LED; STAR; yellow; 120°; 590nm; P: 1W; 30÷40lm
LED colour: yellow
Power: 1W
Viewing angle: 120°
Wavelength: 590nm
Type of diode: power LED
Luminosity: 30...40lm
LED version: STAR
Category: Colour power LEDs - Emiter
Description: Power LED; STAR; yellow; 120°; 590nm; P: 1W; 30÷40lm
LED colour: yellow
Power: 1W
Viewing angle: 120°
Wavelength: 590nm
Type of diode: power LED
Luminosity: 30...40lm
LED version: STAR
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.46 EUR |
25+ | 2.86 EUR |
LL-HP60NUYC |
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Hersteller: LUCKYLIGHT
Category: Colour power LEDs - Emiter
Description: Power LED; STAR; yellow; 120°; 590nm; P: 1W; 30÷40lm
LED colour: yellow
Power: 1W
Viewing angle: 120°
Wavelength: 590nm
Type of diode: power LED
Luminosity: 30...40lm
LED version: STAR
Anzahl je Verpackung: 1 Stücke
Category: Colour power LEDs - Emiter
Description: Power LED; STAR; yellow; 120°; 590nm; P: 1W; 30÷40lm
LED colour: yellow
Power: 1W
Viewing angle: 120°
Wavelength: 590nm
Type of diode: power LED
Luminosity: 30...40lm
LED version: STAR
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.46 EUR |
25+ | 2.86 EUR |
LL-HP60NW6EB |
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Hersteller: LUCKYLIGHT
Category: White power LEDs - Emiter
Description: Power LED; STAR; white warm; 120°; P: 1W; 80÷90lm
LED colour: white warm
Power: 1W
Viewing angle: 120°
Type of diode: power LED
Luminosity: 80...90lm
Colour temperature: 2600-4000K
LED version: STAR
Category: White power LEDs - Emiter
Description: Power LED; STAR; white warm; 120°; P: 1W; 80÷90lm
LED colour: white warm
Power: 1W
Viewing angle: 120°
Type of diode: power LED
Luminosity: 80...90lm
Colour temperature: 2600-4000K
LED version: STAR
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 5.00 EUR |
18+ | 4.06 EUR |
23+ | 3.20 EUR |
24+ | 3.03 EUR |
LL-HP60NW6EB |
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Hersteller: LUCKYLIGHT
Category: White power LEDs - Emiter
Description: Power LED; STAR; white warm; 120°; P: 1W; 80÷90lm
LED colour: white warm
Power: 1W
Viewing angle: 120°
Type of diode: power LED
Luminosity: 80...90lm
Colour temperature: 2600-4000K
LED version: STAR
Anzahl je Verpackung: 1 Stücke
Category: White power LEDs - Emiter
Description: Power LED; STAR; white warm; 120°; P: 1W; 80÷90lm
LED colour: white warm
Power: 1W
Viewing angle: 120°
Type of diode: power LED
Luminosity: 80...90lm
Colour temperature: 2600-4000K
LED version: STAR
Anzahl je Verpackung: 1 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
15+ | 5.00 EUR |
18+ | 4.06 EUR |
23+ | 3.20 EUR |
24+ | 3.03 EUR |
LL-HP60NWEB |
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Hersteller: LUCKYLIGHT
Category: White power LEDs - Emiter
Description: Power LED; STAR; white cold; 120°; P: 1W; 85÷100lm
LED colour: white cold
Power: 1W
Viewing angle: 120°
Type of diode: power LED
Luminosity: 85...100lm
Colour temperature: 4000-10000K
LED version: STAR
Category: White power LEDs - Emiter
Description: Power LED; STAR; white cold; 120°; P: 1W; 85÷100lm
LED colour: white cold
Power: 1W
Viewing angle: 120°
Type of diode: power LED
Luminosity: 85...100lm
Colour temperature: 4000-10000K
LED version: STAR
auf Bestellung 163 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.88 EUR |
18+ | 4.06 EUR |
26+ | 2.85 EUR |
27+ | 2.69 EUR |
LL-HP60NWEB |
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Hersteller: LUCKYLIGHT
Category: White power LEDs - Emiter
Description: Power LED; STAR; white cold; 120°; P: 1W; 85÷100lm
LED colour: white cold
Power: 1W
Viewing angle: 120°
Type of diode: power LED
Luminosity: 85...100lm
Colour temperature: 4000-10000K
LED version: STAR
Anzahl je Verpackung: 1 Stücke
Category: White power LEDs - Emiter
Description: Power LED; STAR; white cold; 120°; P: 1W; 85÷100lm
LED colour: white cold
Power: 1W
Viewing angle: 120°
Type of diode: power LED
Luminosity: 85...100lm
Colour temperature: 4000-10000K
LED version: STAR
Anzahl je Verpackung: 1 Stücke
auf Bestellung 163 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.88 EUR |
18+ | 4.06 EUR |
26+ | 2.85 EUR |
27+ | 2.69 EUR |
NP60N04ILF-E1-AZ |
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Hersteller: Renesas
Description: NP60N04ILF-E1-AZ - SWITCHINGN-CH
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3Z)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Description: NP60N04ILF-E1-AZ - SWITCHINGN-CH
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3Z)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
156+ | 3.26 EUR |
NP60N04VDK-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: POWER TRS2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Qualification: AEC-Q101
Description: POWER TRS2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4426 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 3.98 EUR |
10+ | 2.56 EUR |
100+ | 1.75 EUR |
500+ | 1.40 EUR |
1000+ | 1.28 EUR |
NP60N04VLK-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2498 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 4.05 EUR |
10+ | 2.60 EUR |
100+ | 1.78 EUR |
500+ | 1.42 EUR |
1000+ | 1.31 EUR |
NP60N04VUK-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 60A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 60A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4199 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 3.98 EUR |
10+ | 2.56 EUR |
100+ | 1.75 EUR |
500+ | 1.40 EUR |
1000+ | 1.28 EUR |
NP60N055VUK-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 60A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 60A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 7973 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 3.94 EUR |
10+ | 2.54 EUR |
100+ | 1.73 EUR |
500+ | 1.38 EUR |
1000+ | 1.27 EUR |
NP60N055VUK-E1-AY |
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Hersteller: Renesas Electronics
MOSFETs Power MOSFET
MOSFETs Power MOSFET
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 2.60 EUR |
10+ | 2.18 EUR |
100+ | 1.72 EUR |
500+ | 1.46 EUR |
1000+ | 1.24 EUR |
2500+ | 1.17 EUR |
5000+ | 1.14 EUR |
NP60N055VUK-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 60A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 60A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 1.10 EUR |
NP60N06VDK-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 8458 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.76 EUR |
10+ | 2.30 EUR |
100+ | 1.74 EUR |
500+ | 1.39 EUR |
1000+ | 1.28 EUR |
NP60N06VDK-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 1.16 EUR |
5000+ | 1.11 EUR |
NP60N06VDK-E1-AY |
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Hersteller: Renesas Electronics
MOSFETs P-TRS2 AUTOMOTIVE MOS
MOSFETs P-TRS2 AUTOMOTIVE MOS
auf Bestellung 260 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 2.60 EUR |
10+ | 2.18 EUR |
100+ | 1.72 EUR |
250+ | 1.60 EUR |
500+ | 1.45 EUR |
1000+ | 1.24 EUR |
2500+ | 1.18 EUR |
NP60N06VLK-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 1.16 EUR |
NP60N06VLK-E1-AY |
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Hersteller: Renesas Electronics
MOSFETs P-TRS2 AUTOMOTIVE MOS
MOSFETs P-TRS2 AUTOMOTIVE MOS
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 2.68 EUR |
10+ | 2.22 EUR |
100+ | 1.78 EUR |
250+ | 1.64 EUR |
500+ | 1.49 EUR |
1000+ | 1.28 EUR |
2500+ | 1.21 EUR |
NP60N06VLK-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3222 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 4.05 EUR |
10+ | 2.60 EUR |
100+ | 1.77 EUR |
500+ | 1.42 EUR |
1000+ | 1.31 EUR |
PD30CNP60NAM5SA |
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Hersteller: Carlo Gavazzi
Photoelectric Sensors Polarized Retro-reflective Photoelectric Sensor, Range 6000mm, red polarized modulated light 625nm, Power Supply 10-30VDC, NPN Output, NO and NC, Light and Dark Switching, M8 Plug
Photoelectric Sensors Polarized Retro-reflective Photoelectric Sensor, Range 6000mm, red polarized modulated light 625nm, Power Supply 10-30VDC, NPN Output, NO and NC, Light and Dark Switching, M8 Plug
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 138.20 EUR |
5+ | 131.26 EUR |
10+ | 127.12 EUR |
25+ | 122.97 EUR |
STP60N043DM9 |
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Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 38 mOhm typ., 56 A MDmesh DM9 Power MOSFET
MOSFETs N-channel 600 V, 38 mOhm typ., 56 A MDmesh DM9 Power MOSFET
auf Bestellung 1119 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 17.35 EUR |
10+ | 14.89 EUR |
25+ | 13.50 EUR |
100+ | 12.39 EUR |
250+ | 11.67 EUR |
500+ | 10.93 EUR |
1000+ | 9.86 EUR |
STP60NF06 | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 252 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.30 EUR |
49+ | 1.47 EUR |
99+ | 0.73 EUR |
104+ | 0.69 EUR |
STP60NF06 | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 252 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.30 EUR |
49+ | 1.47 EUR |
99+ | 0.73 EUR |
104+ | 0.69 EUR |
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