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STP60NF06 STP60NF06
Produktcode: 2993
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ST STP60NF06.pdf description Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 60
Idd,A: 60
Rds(on), Ohm: 0.014
Ciss, pF/Qg, nC: 1800/49
JHGF: THT
ZCODE: 8541290010
auf Bestellung 381 Stück:
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1+0.7 EUR
10+0.67 EUR
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STP60NF06L STP60NF06L
Produktcode: 105102
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ST stp60nf06l.pdf Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 60 V
Idd,A: 60 A
Rds(on), Ohm: 0,012 Ohm
Ciss, pF/Qg, nC: 2000/35
JHGF: THT
ZCODE: 8541290010
auf Bestellung 69 Stück:
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P60N02LDG
auf Bestellung 23290 Stücke:
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P60N03LD
auf Bestellung 2000 Stücke:
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P60N03LDG NIKO 09+
auf Bestellung 5000 Stücke:
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P60N03LR
auf Bestellung 50000 Stücke:
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P60N06 IR 09+
auf Bestellung 5030 Stücke:
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P60N06 ST TO-220 03+
auf Bestellung 20000 Stücke:
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P60NE03L-10 ST
auf Bestellung 3150 Stücke:
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P60NE06
auf Bestellung 3700 Stücke:
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P60NE06L-16
auf Bestellung 20 Stücke:
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P60NF03 ST 05+
auf Bestellung 15000 Stücke:
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P60NF03L ST 05+
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P60NF06 ST 09+
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P60NF06FP
auf Bestellung 506 Stücke:
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P60NF06L ST TO220 03+
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EJP60N100 EJP60N100 ETEK MICROELECTRONICS b32b8afedec4fc66183f0a6a29224142.pdf Description: 60V N-Channel Trench Power MOSFE
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A
Supplier Device Package: 8-SOP
Vgs (Max): ±20V
auf Bestellung 10000 Stücke:
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33+0.55 EUR
35+0.51 EUR
50+0.48 EUR
100+0.45 EUR
1000+0.42 EUR
3000+0.39 EUR
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EJP60NP930 EJP60NP930 ETEK MICROELECTRONICS aa2303b9450f7f7493621ef8ef3dcab2.pdf Description: 60V N&P-Channel Trench Power MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-SOP
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel
Operating Temperature: -40°C ~ 85°C (TA)
Drain to Source Voltage (Vdss): 65V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 1mA
auf Bestellung 10000 Stücke:
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IRG8P60N120KD-EPBF IRG8P60N120KD-EPBF International Rectifier IRSD-S-A0000034003-1.pdf?t.download=true&u=5oefqw Description: IGBT 1200V 100A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 210 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/240ns
Switching Energy: 2.8mJ (on), 2.3mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 345 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 420 W
auf Bestellung 8826 Stücke:
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43+10.9 EUR
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IXFP60N25X3 IXFP60N25X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48077B3DDB820&compId=IXFA(P%2CQ)60N25X3.pdf?ci_sign=40bf31d6f48e6a29413d60f94152aaab04d45448 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
auf Bestellung 302 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.04 EUR
10+7.19 EUR
11+6.81 EUR
50+6.69 EUR
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IXFP60N25X3 IXFP60N25X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48077B3DDB820&compId=IXFA(P%2CQ)60N25X3.pdf?ci_sign=40bf31d6f48e6a29413d60f94152aaab04d45448 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 302 Stücke:
Lieferzeit 7-14 Tag (e)
8+9.04 EUR
10+7.19 EUR
11+6.81 EUR
50+6.69 EUR
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IXFP60N25X3 IXFP60N25X3 Littelfuse Inc. DS100807CIXFAFPFQ60N25X3.pdf Description: MOSFET N-CH 250V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220AB (IXFP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V
auf Bestellung 35 Stücke:
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2+13.83 EUR
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IXFP60N25X3 IXFP60N25X3 IXYS media-3319826.pdf MOSFETs 250V/60A Ultra Junct ion X3-Class MOSFET
auf Bestellung 289 Stücke:
Lieferzeit 10-14 Tag (e)
1+14.04 EUR
10+13.89 EUR
50+9.29 EUR
100+9.12 EUR
250+8.98 EUR
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IXFP60N25X3M IXFP60N25X3M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6A59820&compId=IXFP60N25X3M.pdf?ci_sign=313b25dbeb5aa4d0c3060d4a0514a7fa0f1de198 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
auf Bestellung 23 Stücke:
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9+8.34 EUR
11+6.74 EUR
12+6.36 EUR
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IXFP60N25X3M IXFP60N25X3M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6A59820&compId=IXFP60N25X3M.pdf?ci_sign=313b25dbeb5aa4d0c3060d4a0514a7fa0f1de198 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)
9+8.34 EUR
11+6.74 EUR
12+6.36 EUR
50+6.18 EUR
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IXFP60N25X3M IXFP60N25X3M Littelfuse Inc. littelfuse-discrete-mosfets-ixf-60n25x3-datasheet?assetguid=27d3d003-ebe6-4c6c-ad92-c705963c1606 Description: MOSFET N-CH 250V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220AB (IXFP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V
auf Bestellung 191 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.36 EUR
50+7.13 EUR
100+6.73 EUR
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IXFP60N25X3M IXFP60N25X3M IXYS media-3322791.pdf MOSFETs 250V/60A Ultra Junct ion X3-Class MOSFET
auf Bestellung 270 Stücke:
Lieferzeit 10-14 Tag (e)
1+12.69 EUR
10+10.05 EUR
50+9.06 EUR
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IXTP60N10T IXTP60N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49165695D1820&compId=IXTA(P)60N10T.pdf?ci_sign=92e4c232650cb3131af7dac4c451a83cc9058951 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 49nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 59ns
Drain-source voltage: 100V
Drain current: 60A
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.3 EUR
40+1.8 EUR
43+1.7 EUR
250+1.63 EUR
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IXTP60N10T IXTP60N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49165695D1820&compId=IXTA(P)60N10T.pdf?ci_sign=92e4c232650cb3131af7dac4c451a83cc9058951 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 49nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 59ns
Drain-source voltage: 100V
Drain current: 60A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 298 Stücke:
Lieferzeit 7-14 Tag (e)
22+3.3 EUR
40+1.8 EUR
43+1.7 EUR
250+1.63 EUR
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IXTP60N10T IXTP60N10T IXYS media-3322180.pdf MOSFETs MOSFET Id60 BVdass100
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.78 EUR
10+3.59 EUR
50+2.15 EUR
100+1.97 EUR
500+1.95 EUR
1000+1.94 EUR
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IXTP60N10T IXTP60N10T Littelfuse Inc. littelfuse-discrete-mosfets-ixt-60n10t-datasheet?assetguid=9c28d11f-bd7e-4749-b9d5-f5d766cb0615 Description: MOSFET N-CH 100V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
auf Bestellung 45 Stücke:
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5+4.1 EUR
Mindestbestellmenge: 5
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IXTP60N20T IXTP60N20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4862938A7D820&compId=IXTA(P%2CQ)60N20T.pdf?ci_sign=66a1292f8361c5aa10783640b65094bdcfe97631 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 73nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 118ns
Drain-source voltage: 200V
Drain current: 60A
auf Bestellung 234 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.36 EUR
15+4.93 EUR
16+4.66 EUR
50+4.48 EUR
Mindestbestellmenge: 10
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IXTP60N20T IXTP60N20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4862938A7D820&compId=IXTA(P%2CQ)60N20T.pdf?ci_sign=66a1292f8361c5aa10783640b65094bdcfe97631 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 73nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 118ns
Drain-source voltage: 200V
Drain current: 60A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 234 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.36 EUR
15+4.93 EUR
16+4.66 EUR
50+4.48 EUR
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IXTP60N20T IXTP60N20T IXYS media-3322086.pdf MOSFETs Trench POWER MOSFETs 200v, 60A
auf Bestellung 98 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.61 EUR
10+8.29 EUR
50+5.42 EUR
100+5.21 EUR
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IXTP60N20T IXTP60N20T Littelfuse Inc. littelfuse-discrete-mosfets-ixt-60n20t-datasheet?assetguid=a2bc6b7d-dab8-4007-9c70-5b1fc95634b1 Description: MOSFET N-CH 200V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
auf Bestellung 198 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.38 EUR
50+5.28 EUR
100+4.89 EUR
Mindestbestellmenge: 2
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IXTP60N20X4 IXTP60N20X4 Littelfuse Inc. IXTP60N20X4_DS.pdf Description: MOSFET ULTRA X4 200V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 30A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220 (IXTP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
auf Bestellung 85 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.51 EUR
50+9.21 EUR
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IXYP60N65A5 IXYP60N65A5 IXYS IXYP60N65A5.pdf Description: IGBT PT 650V 134A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 36A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/230ns
Switching Energy: 600µJ (on), 1.45mJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 128 nC
Part Status: Active
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 260 A
Power - Max: 395 W
auf Bestellung 136 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.05 EUR
50+4.77 EUR
100+4.36 EUR
Mindestbestellmenge: 2
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IXYP60N65A5 IXYP60N65A5 IXYS media-3323590.pdf IGBTs XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO220
auf Bestellung 311 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.87 EUR
10+7.11 EUR
50+4.44 EUR
100+4.08 EUR
250+4.05 EUR
500+3.75 EUR
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LL-HP60NUYC LL-HP60NUYC LUCKYLIGHT pVersion=0046&contRep=ZT&docId=E1C05044751F59F1A6F5005056AB5A8F&compId=ll-hp60nuyc.pdf?ci_sign=b22c182e7eda42281cb642c744f3977645417303 Category: Colour power LEDs - Emiter
Description: Power LED; yellow; STAR; 120°; 590nm; 30÷40lm; 1W
LED colour: yellow
Wavelength: 590nm
Viewing angle: 120°
Luminosity: 30...40lm
LED version: STAR
Type of diode: power LED
Power: 1W
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.25 EUR
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LL-HP60NUYC LL-HP60NUYC LUCKYLIGHT pVersion=0046&contRep=ZT&docId=E1C05044751F59F1A6F5005056AB5A8F&compId=ll-hp60nuyc.pdf?ci_sign=b22c182e7eda42281cb642c744f3977645417303 Category: Colour power LEDs - Emiter
Description: Power LED; yellow; STAR; 120°; 590nm; 30÷40lm; 1W
LED colour: yellow
Wavelength: 590nm
Viewing angle: 120°
Luminosity: 30...40lm
LED version: STAR
Type of diode: power LED
Power: 1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
22+3.25 EUR
25+2.86 EUR
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LL-HP60NW6EB LL-HP60NW6EB LUCKYLIGHT pVersion=0046&contRep=ZT&docId=E1C0504A748AFCF1A6F5005056AB5A8F&compId=ll-hp60nw6eb.pdf?ci_sign=fe4090aa80466cc10632fc5e4531f7fba33e12bb Category: White power LEDs - Emiter
Description: Power LED; white warm; STAR; 1W; 2600-4000K; 80÷90lm; 120°
LED colour: white warm
Viewing angle: 120°
Luminosity: 80...90lm
Colour temperature: 2600-4000K
LED version: STAR
Type of diode: power LED
Power: 1W
auf Bestellung 22 Stücke:
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17+4.45 EUR
20+3.6 EUR
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LL-HP60NW6EB LL-HP60NW6EB LUCKYLIGHT pVersion=0046&contRep=ZT&docId=E1C0504A748AFCF1A6F5005056AB5A8F&compId=ll-hp60nw6eb.pdf?ci_sign=fe4090aa80466cc10632fc5e4531f7fba33e12bb Category: White power LEDs - Emiter
Description: Power LED; white warm; STAR; 1W; 2600-4000K; 80÷90lm; 120°
LED colour: white warm
Viewing angle: 120°
Luminosity: 80...90lm
Colour temperature: 2600-4000K
LED version: STAR
Type of diode: power LED
Power: 1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.45 EUR
20+3.6 EUR
22+3.25 EUR
100+2.77 EUR
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LL-HP60NWEB LL-HP60NWEB LUCKYLIGHT pVersion=0046&contRep=ZT&docId=E1C0504A748B03F1A6F5005056AB5A8F&compId=ll-hp60nweb.pdf?ci_sign=5f8baf161f223b6c10a40dd91e2fc0790ea9a194 Category: White power LEDs - Emiter
Description: Power LED; white cold; STAR; 1W; 4000-10000K; 85÷100lm; 120°
LED colour: white cold
Viewing angle: 120°
Luminosity: 85...100lm
Colour temperature: 4000-10000K
LED version: STAR
Type of diode: power LED
Power: 1W
auf Bestellung 127 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.33 EUR
20+3.6 EUR
28+2.65 EUR
29+2.5 EUR
100+2.43 EUR
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LL-HP60NWEB LL-HP60NWEB LUCKYLIGHT pVersion=0046&contRep=ZT&docId=E1C0504A748B03F1A6F5005056AB5A8F&compId=ll-hp60nweb.pdf?ci_sign=5f8baf161f223b6c10a40dd91e2fc0790ea9a194 Category: White power LEDs - Emiter
Description: Power LED; white cold; STAR; 1W; 4000-10000K; 85÷100lm; 120°
LED colour: white cold
Viewing angle: 120°
Luminosity: 85...100lm
Colour temperature: 4000-10000K
LED version: STAR
Type of diode: power LED
Power: 1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 127 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.33 EUR
20+3.6 EUR
28+2.65 EUR
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100+2.43 EUR
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NP60N04ILF-E1-AZ NP60N04ILF-E1-AZ Renesas np60n04hlfnp60n04ilf-data-sheet Description: NP60N04ILF-E1-AZ - SWITCHINGN-CH
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3Z)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
164+2.82 EUR
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NP60N04VDK-E1-AY NP60N04VDK-E1-AY Renesas Electronics Corporation np60n04vdk40-v-60-n-channel-power-mos-fetapplication-automotive?r=499856 Description: POWER TRS2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4156 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.64 EUR
10+2.34 EUR
100+1.59 EUR
500+1.27 EUR
1000+1.17 EUR
Mindestbestellmenge: 5
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NP60N04VLK-E1-AY NP60N04VLK-E1-AY Renesas Electronics Corporation np60n04vlk40-v-60-n-channel-power-mos-fetapplication-automotive?r=499861 Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2498 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.7 EUR
10+2.38 EUR
100+1.62 EUR
500+1.3 EUR
1000+1.27 EUR
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NP60N04VUK-E1-AY NP60N04VUK-E1-AY Renesas Electronics Corporation np60n04vukmos-field-effect-transistor Description: MOSFET N-CH 40V 60A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4187 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.57 EUR
10+2.29 EUR
100+1.56 EUR
500+1.25 EUR
1000+1.15 EUR
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NP60N055VUK-E1-AY NP60N055VUK-E1-AY Renesas Electronics Corporation np60n055vukmos-field-effect-transistor Description: MOSFET N-CH 55V 60A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.99 EUR
Mindestbestellmenge: 2500
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NP60N055VUK-E1-AY NP60N055VUK-E1-AY Renesas Electronics Corporation np60n055vukmos-field-effect-transistor Description: MOSFET N-CH 55V 60A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 7973 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.41 EUR
10+2 EUR
100+1.55 EUR
500+1.24 EUR
1000+1.21 EUR
Mindestbestellmenge: 8
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NP60N055VUK-E1-AY NP60N055VUK-E1-AY Renesas Electronics REN_r07ds0588ej0200_pomosfet_DST_20180524-2930618.pdf MOSFETs AUTOMOTIVE MOS MP-3ZP ANL2
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.83 EUR
10+1.63 EUR
100+1.37 EUR
500+1.22 EUR
1000+1.17 EUR
2500+1.08 EUR
Mindestbestellmenge: 2
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NP60N06VDK-E1-AY NP60N06VDK-E1-AY Renesas Electronics REN_r07ds1340ej0200_pomosfet_DST_20180524-2930603.pdf MOSFETs AUTOMOTIVE MOS MP-3ZP ANL2
auf Bestellung 2720 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.46 EUR
10+2.06 EUR
100+1.63 EUR
250+1.51 EUR
500+1.37 EUR
1000+1.18 EUR
2500+1.12 EUR
Mindestbestellmenge: 2
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NP60N06VDK-E1-AY NP60N06VDK-E1-AY Renesas Electronics Corporation np60n06vdk60-v-60-n-channel-power-mos-fet-application-automotive?r=499906 Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2908 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.48 EUR
10+2.06 EUR
100+1.56 EUR
500+1.25 EUR
1000+1.22 EUR
Mindestbestellmenge: 8
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NP60N06VLK-E1-AY NP60N06VLK-E1-AY Renesas Electronics Corporation np60n06vlk60-v-60-n-channel-power-mos-fet-application-automotive?r=499911 Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3202 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.59 EUR
10+2.15 EUR
100+1.62 EUR
500+1.3 EUR
1000+1.27 EUR
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NP60N06VLK-E1-AY NP60N06VLK-E1-AY Renesas Electronics REN_r07ds1339ej0200_pomosfet_DST_20180524-2930619.pdf MOSFETs AUTOMOTIVE MOS MP-3ZP ANL2
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.53 EUR
10+2.11 EUR
100+1.68 EUR
250+1.55 EUR
500+1.41 EUR
1000+1.21 EUR
2500+1.15 EUR
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NP60N06VLK-E1-AY NP60N06VLK-E1-AY Renesas Electronics Corporation np60n06vlk60-v-60-n-channel-power-mos-fet-application-automotive?r=499911 Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.08 EUR
Mindestbestellmenge: 2500
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STP60N043DM9 STP60N043DM9 STMicroelectronics stp60n043dm9.pdf MOSFETs N-channel 600 V, 38 mOhm typ., 56 A MDmesh DM9 Power MOSFET
auf Bestellung 993 Stücke:
Lieferzeit 10-14 Tag (e)
1+14.59 EUR
25+13.31 EUR
100+11.76 EUR
500+11.07 EUR
1000+9.8 EUR
2000+9.59 EUR
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STP60N043DM9 STP60N043DM9 STMicroelectronics stp60n043dm9.pdf Description: N-CHANNEL 600 V, 38 MOHM TYP., 5
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 28A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 78.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4675 pF @ 400 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.47 EUR
50+11.95 EUR
100+11.21 EUR
500+10.39 EUR
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STP60NF06 STP60NF06 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1EE78AE4B970BEA8E745&compId=STP60NF06.pdf?ci_sign=f4e885580f6d4c2f72bc63bda61d3e716c93a052 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.85 EUR
66+1.09 EUR
104+0.69 EUR
110+0.65 EUR
Mindestbestellmenge: 26
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STP60NF06 STP60NF06 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1EE78AE4B970BEA8E745&compId=STP60NF06.pdf?ci_sign=f4e885580f6d4c2f72bc63bda61d3e716c93a052 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 165 Stücke:
Lieferzeit 7-14 Tag (e)
26+2.85 EUR
66+1.09 EUR
104+0.69 EUR
110+0.65 EUR
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STP60NF06
Produktcode: 2993
zu Favoriten hinzufügen Lieblingsprodukt

description STP60NF06.pdf
STP60NF06
Hersteller: ST
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 60
Idd,A: 60
Rds(on), Ohm: 0.014
Ciss, pF/Qg, nC: 1800/49
JHGF: THT
ZCODE: 8541290010
auf Bestellung 381 Stück:
Lieferzeit 21-28 Tag (e)
Anzahl Preis
1+0.7 EUR
10+0.67 EUR
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STP60NF06L
Produktcode: 105102
zu Favoriten hinzufügen Lieblingsprodukt

stp60nf06l.pdf
STP60NF06L
Hersteller: ST
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 60 V
Idd,A: 60 A
Rds(on), Ohm: 0,012 Ohm
Ciss, pF/Qg, nC: 2000/35
JHGF: THT
ZCODE: 8541290010
auf Bestellung 69 Stück:
Lieferzeit 21-28 Tag (e)
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P60N02LDG
auf Bestellung 23290 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
P60N03LD
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
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P60N03LDG
Hersteller: NIKO
09+
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
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P60N03LR
auf Bestellung 50000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
P60N06
Hersteller: IR
09+
auf Bestellung 5030 Stücke:
Lieferzeit 21-28 Tag (e)
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P60N06
Hersteller: ST
TO-220 03+
auf Bestellung 20000 Stücke:
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P60NE03L-10
Hersteller: ST
auf Bestellung 3150 Stücke:
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P60NE06
auf Bestellung 3700 Stücke:
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P60NE06L-16
auf Bestellung 20 Stücke:
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P60NF03
Hersteller: ST
05+
auf Bestellung 15000 Stücke:
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P60NF03L
Hersteller: ST
05+
auf Bestellung 20000 Stücke:
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P60NF06
Hersteller: ST
09+
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P60NF06FP
auf Bestellung 506 Stücke:
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P60NF06L
Hersteller: ST
TO220 03+
auf Bestellung 44 Stücke:
Lieferzeit 21-28 Tag (e)
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EJP60N100 b32b8afedec4fc66183f0a6a29224142.pdf
EJP60N100
Hersteller: ETEK MICROELECTRONICS
Description: 60V N-Channel Trench Power MOSFE
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A
Supplier Device Package: 8-SOP
Vgs (Max): ±20V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
35+0.51 EUR
50+0.48 EUR
100+0.45 EUR
1000+0.42 EUR
3000+0.39 EUR
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EJP60NP930 aa2303b9450f7f7493621ef8ef3dcab2.pdf
EJP60NP930
Hersteller: ETEK MICROELECTRONICS
Description: 60V N&P-Channel Trench Power MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-SOP
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel
Operating Temperature: -40°C ~ 85°C (TA)
Drain to Source Voltage (Vdss): 65V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 1mA
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
35+0.51 EUR
50+0.48 EUR
100+0.45 EUR
1000+0.42 EUR
3000+0.39 EUR
Mindestbestellmenge: 33
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IRG8P60N120KD-EPBF IRSD-S-A0000034003-1.pdf?t.download=true&u=5oefqw
IRG8P60N120KD-EPBF
Hersteller: International Rectifier
Description: IGBT 1200V 100A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 210 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/240ns
Switching Energy: 2.8mJ (on), 2.3mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 345 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 420 W
auf Bestellung 8826 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
43+10.9 EUR
Mindestbestellmenge: 43
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IXFP60N25X3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48077B3DDB820&compId=IXFA(P%2CQ)60N25X3.pdf?ci_sign=40bf31d6f48e6a29413d60f94152aaab04d45448
IXFP60N25X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
auf Bestellung 302 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.04 EUR
10+7.19 EUR
11+6.81 EUR
50+6.69 EUR
Mindestbestellmenge: 8
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IXFP60N25X3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48077B3DDB820&compId=IXFA(P%2CQ)60N25X3.pdf?ci_sign=40bf31d6f48e6a29413d60f94152aaab04d45448
IXFP60N25X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 302 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
8+9.04 EUR
10+7.19 EUR
11+6.81 EUR
50+6.69 EUR
Mindestbestellmenge: 8
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IXFP60N25X3 DS100807CIXFAFPFQ60N25X3.pdf
IXFP60N25X3
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 250V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220AB (IXFP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.83 EUR
Mindestbestellmenge: 2
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IXFP60N25X3 media-3319826.pdf
IXFP60N25X3
Hersteller: IXYS
MOSFETs 250V/60A Ultra Junct ion X3-Class MOSFET
auf Bestellung 289 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+14.04 EUR
10+13.89 EUR
50+9.29 EUR
100+9.12 EUR
250+8.98 EUR
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IXFP60N25X3M pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6A59820&compId=IXFP60N25X3M.pdf?ci_sign=313b25dbeb5aa4d0c3060d4a0514a7fa0f1de198
IXFP60N25X3M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.34 EUR
11+6.74 EUR
12+6.36 EUR
Mindestbestellmenge: 9
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IXFP60N25X3M pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6A59820&compId=IXFP60N25X3M.pdf?ci_sign=313b25dbeb5aa4d0c3060d4a0514a7fa0f1de198
IXFP60N25X3M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
9+8.34 EUR
11+6.74 EUR
12+6.36 EUR
50+6.18 EUR
Mindestbestellmenge: 9
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IXFP60N25X3M littelfuse-discrete-mosfets-ixf-60n25x3-datasheet?assetguid=27d3d003-ebe6-4c6c-ad92-c705963c1606
IXFP60N25X3M
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 250V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220AB (IXFP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V
auf Bestellung 191 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.36 EUR
50+7.13 EUR
100+6.73 EUR
Mindestbestellmenge: 2
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IXFP60N25X3M media-3322791.pdf
IXFP60N25X3M
Hersteller: IXYS
MOSFETs 250V/60A Ultra Junct ion X3-Class MOSFET
auf Bestellung 270 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+12.69 EUR
10+10.05 EUR
50+9.06 EUR
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IXTP60N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49165695D1820&compId=IXTA(P)60N10T.pdf?ci_sign=92e4c232650cb3131af7dac4c451a83cc9058951
IXTP60N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 49nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 59ns
Drain-source voltage: 100V
Drain current: 60A
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.3 EUR
40+1.8 EUR
43+1.7 EUR
250+1.63 EUR
Mindestbestellmenge: 22
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IXTP60N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49165695D1820&compId=IXTA(P)60N10T.pdf?ci_sign=92e4c232650cb3131af7dac4c451a83cc9058951
IXTP60N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 49nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 59ns
Drain-source voltage: 100V
Drain current: 60A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 298 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
22+3.3 EUR
40+1.8 EUR
43+1.7 EUR
250+1.63 EUR
Mindestbestellmenge: 22
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IXTP60N10T media-3322180.pdf
IXTP60N10T
Hersteller: IXYS
MOSFETs MOSFET Id60 BVdass100
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.78 EUR
10+3.59 EUR
50+2.15 EUR
100+1.97 EUR
500+1.95 EUR
1000+1.94 EUR
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IXTP60N10T littelfuse-discrete-mosfets-ixt-60n10t-datasheet?assetguid=9c28d11f-bd7e-4749-b9d5-f5d766cb0615
IXTP60N10T
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 100V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.1 EUR
Mindestbestellmenge: 5
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IXTP60N20T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4862938A7D820&compId=IXTA(P%2CQ)60N20T.pdf?ci_sign=66a1292f8361c5aa10783640b65094bdcfe97631
IXTP60N20T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 73nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 118ns
Drain-source voltage: 200V
Drain current: 60A
auf Bestellung 234 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.36 EUR
15+4.93 EUR
16+4.66 EUR
50+4.48 EUR
Mindestbestellmenge: 10
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IXTP60N20T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4862938A7D820&compId=IXTA(P%2CQ)60N20T.pdf?ci_sign=66a1292f8361c5aa10783640b65094bdcfe97631
IXTP60N20T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 73nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 118ns
Drain-source voltage: 200V
Drain current: 60A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 234 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.36 EUR
15+4.93 EUR
16+4.66 EUR
50+4.48 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXTP60N20T media-3322086.pdf
IXTP60N20T
Hersteller: IXYS
MOSFETs Trench POWER MOSFETs 200v, 60A
auf Bestellung 98 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.61 EUR
10+8.29 EUR
50+5.42 EUR
100+5.21 EUR
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IXTP60N20T littelfuse-discrete-mosfets-ixt-60n20t-datasheet?assetguid=a2bc6b7d-dab8-4007-9c70-5b1fc95634b1
IXTP60N20T
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 200V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
auf Bestellung 198 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.38 EUR
50+5.28 EUR
100+4.89 EUR
Mindestbestellmenge: 2
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IXTP60N20X4 IXTP60N20X4_DS.pdf
IXTP60N20X4
Hersteller: Littelfuse Inc.
Description: MOSFET ULTRA X4 200V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 30A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220 (IXTP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
auf Bestellung 85 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.51 EUR
50+9.21 EUR
Mindestbestellmenge: 2
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IXYP60N65A5 IXYP60N65A5.pdf
IXYP60N65A5
Hersteller: IXYS
Description: IGBT PT 650V 134A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 36A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/230ns
Switching Energy: 600µJ (on), 1.45mJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 128 nC
Part Status: Active
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 260 A
Power - Max: 395 W
auf Bestellung 136 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.05 EUR
50+4.77 EUR
100+4.36 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXYP60N65A5 media-3323590.pdf
IXYP60N65A5
Hersteller: IXYS
IGBTs XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO220
auf Bestellung 311 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.87 EUR
10+7.11 EUR
50+4.44 EUR
100+4.08 EUR
250+4.05 EUR
500+3.75 EUR
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LL-HP60NUYC pVersion=0046&contRep=ZT&docId=E1C05044751F59F1A6F5005056AB5A8F&compId=ll-hp60nuyc.pdf?ci_sign=b22c182e7eda42281cb642c744f3977645417303
LL-HP60NUYC
Hersteller: LUCKYLIGHT
Category: Colour power LEDs - Emiter
Description: Power LED; yellow; STAR; 120°; 590nm; 30÷40lm; 1W
LED colour: yellow
Wavelength: 590nm
Viewing angle: 120°
Luminosity: 30...40lm
LED version: STAR
Type of diode: power LED
Power: 1W
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.25 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
LL-HP60NUYC pVersion=0046&contRep=ZT&docId=E1C05044751F59F1A6F5005056AB5A8F&compId=ll-hp60nuyc.pdf?ci_sign=b22c182e7eda42281cb642c744f3977645417303
LL-HP60NUYC
Hersteller: LUCKYLIGHT
Category: Colour power LEDs - Emiter
Description: Power LED; yellow; STAR; 120°; 590nm; 30÷40lm; 1W
LED colour: yellow
Wavelength: 590nm
Viewing angle: 120°
Luminosity: 30...40lm
LED version: STAR
Type of diode: power LED
Power: 1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
22+3.25 EUR
25+2.86 EUR
Mindestbestellmenge: 22
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LL-HP60NW6EB pVersion=0046&contRep=ZT&docId=E1C0504A748AFCF1A6F5005056AB5A8F&compId=ll-hp60nw6eb.pdf?ci_sign=fe4090aa80466cc10632fc5e4531f7fba33e12bb
LL-HP60NW6EB
Hersteller: LUCKYLIGHT
Category: White power LEDs - Emiter
Description: Power LED; white warm; STAR; 1W; 2600-4000K; 80÷90lm; 120°
LED colour: white warm
Viewing angle: 120°
Luminosity: 80...90lm
Colour temperature: 2600-4000K
LED version: STAR
Type of diode: power LED
Power: 1W
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.45 EUR
20+3.6 EUR
22+3.25 EUR
Mindestbestellmenge: 17
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LL-HP60NW6EB pVersion=0046&contRep=ZT&docId=E1C0504A748AFCF1A6F5005056AB5A8F&compId=ll-hp60nw6eb.pdf?ci_sign=fe4090aa80466cc10632fc5e4531f7fba33e12bb
LL-HP60NW6EB
Hersteller: LUCKYLIGHT
Category: White power LEDs - Emiter
Description: Power LED; white warm; STAR; 1W; 2600-4000K; 80÷90lm; 120°
LED colour: white warm
Viewing angle: 120°
Luminosity: 80...90lm
Colour temperature: 2600-4000K
LED version: STAR
Type of diode: power LED
Power: 1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
17+4.45 EUR
20+3.6 EUR
22+3.25 EUR
100+2.77 EUR
Mindestbestellmenge: 17
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LL-HP60NWEB pVersion=0046&contRep=ZT&docId=E1C0504A748B03F1A6F5005056AB5A8F&compId=ll-hp60nweb.pdf?ci_sign=5f8baf161f223b6c10a40dd91e2fc0790ea9a194
LL-HP60NWEB
Hersteller: LUCKYLIGHT
Category: White power LEDs - Emiter
Description: Power LED; white cold; STAR; 1W; 4000-10000K; 85÷100lm; 120°
LED colour: white cold
Viewing angle: 120°
Luminosity: 85...100lm
Colour temperature: 4000-10000K
LED version: STAR
Type of diode: power LED
Power: 1W
auf Bestellung 127 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.33 EUR
20+3.6 EUR
28+2.65 EUR
29+2.5 EUR
100+2.43 EUR
Mindestbestellmenge: 17
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LL-HP60NWEB pVersion=0046&contRep=ZT&docId=E1C0504A748B03F1A6F5005056AB5A8F&compId=ll-hp60nweb.pdf?ci_sign=5f8baf161f223b6c10a40dd91e2fc0790ea9a194
LL-HP60NWEB
Hersteller: LUCKYLIGHT
Category: White power LEDs - Emiter
Description: Power LED; white cold; STAR; 1W; 4000-10000K; 85÷100lm; 120°
LED colour: white cold
Viewing angle: 120°
Luminosity: 85...100lm
Colour temperature: 4000-10000K
LED version: STAR
Type of diode: power LED
Power: 1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 127 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
17+4.33 EUR
20+3.6 EUR
28+2.65 EUR
29+2.5 EUR
100+2.43 EUR
Mindestbestellmenge: 17
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NP60N04ILF-E1-AZ np60n04hlfnp60n04ilf-data-sheet
NP60N04ILF-E1-AZ
Hersteller: Renesas
Description: NP60N04ILF-E1-AZ - SWITCHINGN-CH
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3Z)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
164+2.82 EUR
Mindestbestellmenge: 164
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NP60N04VDK-E1-AY np60n04vdk40-v-60-n-channel-power-mos-fetapplication-automotive?r=499856
NP60N04VDK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: POWER TRS2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4156 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.64 EUR
10+2.34 EUR
100+1.59 EUR
500+1.27 EUR
1000+1.17 EUR
Mindestbestellmenge: 5
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NP60N04VLK-E1-AY np60n04vlk40-v-60-n-channel-power-mos-fetapplication-automotive?r=499861
NP60N04VLK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2498 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.7 EUR
10+2.38 EUR
100+1.62 EUR
500+1.3 EUR
1000+1.27 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
NP60N04VUK-E1-AY np60n04vukmos-field-effect-transistor
NP60N04VUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 60A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4187 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.57 EUR
10+2.29 EUR
100+1.56 EUR
500+1.25 EUR
1000+1.15 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
NP60N055VUK-E1-AY np60n055vukmos-field-effect-transistor
NP60N055VUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 60A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.99 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
NP60N055VUK-E1-AY np60n055vukmos-field-effect-transistor
NP60N055VUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 60A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 7973 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.41 EUR
10+2 EUR
100+1.55 EUR
500+1.24 EUR
1000+1.21 EUR
Mindestbestellmenge: 8
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NP60N055VUK-E1-AY REN_r07ds0588ej0200_pomosfet_DST_20180524-2930618.pdf
NP60N055VUK-E1-AY
Hersteller: Renesas Electronics
MOSFETs AUTOMOTIVE MOS MP-3ZP ANL2
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.83 EUR
10+1.63 EUR
100+1.37 EUR
500+1.22 EUR
1000+1.17 EUR
2500+1.08 EUR
Mindestbestellmenge: 2
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NP60N06VDK-E1-AY REN_r07ds1340ej0200_pomosfet_DST_20180524-2930603.pdf
NP60N06VDK-E1-AY
Hersteller: Renesas Electronics
MOSFETs AUTOMOTIVE MOS MP-3ZP ANL2
auf Bestellung 2720 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.46 EUR
10+2.06 EUR
100+1.63 EUR
250+1.51 EUR
500+1.37 EUR
1000+1.18 EUR
2500+1.12 EUR
Mindestbestellmenge: 2
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NP60N06VDK-E1-AY np60n06vdk60-v-60-n-channel-power-mos-fet-application-automotive?r=499906
NP60N06VDK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2908 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.48 EUR
10+2.06 EUR
100+1.56 EUR
500+1.25 EUR
1000+1.22 EUR
Mindestbestellmenge: 8
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NP60N06VLK-E1-AY np60n06vlk60-v-60-n-channel-power-mos-fet-application-automotive?r=499911
NP60N06VLK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3202 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.59 EUR
10+2.15 EUR
100+1.62 EUR
500+1.3 EUR
1000+1.27 EUR
Mindestbestellmenge: 7
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NP60N06VLK-E1-AY REN_r07ds1339ej0200_pomosfet_DST_20180524-2930619.pdf
NP60N06VLK-E1-AY
Hersteller: Renesas Electronics
MOSFETs AUTOMOTIVE MOS MP-3ZP ANL2
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.53 EUR
10+2.11 EUR
100+1.68 EUR
250+1.55 EUR
500+1.41 EUR
1000+1.21 EUR
2500+1.15 EUR
Mindestbestellmenge: 2
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NP60N06VLK-E1-AY np60n06vlk60-v-60-n-channel-power-mos-fet-application-automotive?r=499911
NP60N06VLK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.08 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
STP60N043DM9 stp60n043dm9.pdf
STP60N043DM9
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 38 mOhm typ., 56 A MDmesh DM9 Power MOSFET
auf Bestellung 993 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+14.59 EUR
25+13.31 EUR
100+11.76 EUR
500+11.07 EUR
1000+9.8 EUR
2000+9.59 EUR
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STP60N043DM9 stp60n043dm9.pdf
STP60N043DM9
Hersteller: STMicroelectronics
Description: N-CHANNEL 600 V, 38 MOHM TYP., 5
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 28A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 78.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4675 pF @ 400 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.47 EUR
50+11.95 EUR
100+11.21 EUR
500+10.39 EUR
Mindestbestellmenge: 2
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STP60NF06 description pVersion=0046&contRep=ZT&docId=005056AB752F1EE78AE4B970BEA8E745&compId=STP60NF06.pdf?ci_sign=f4e885580f6d4c2f72bc63bda61d3e716c93a052
STP60NF06
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.85 EUR
66+1.09 EUR
104+0.69 EUR
110+0.65 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
STP60NF06 description pVersion=0046&contRep=ZT&docId=005056AB752F1EE78AE4B970BEA8E745&compId=STP60NF06.pdf?ci_sign=f4e885580f6d4c2f72bc63bda61d3e716c93a052
STP60NF06
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 165 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
26+2.85 EUR
66+1.09 EUR
104+0.69 EUR
110+0.65 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
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