Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (171429) > Seite 1252 nach 2858
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STTH8R04G-TR | STMicroelectronics |
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STTH8R06D | STMicroelectronics |
![]() ![]() Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220AC; 25ns Semiconductor structure: single diode Max. off-state voltage: 0.6kV Load current: 8A Case: TO220AC Max. forward voltage: 1.4V Max. forward impulse current: 80A Max. load current: 30A Reverse recovery time: 25ns Type of diode: rectifying Kind of package: tube Features of semiconductor devices: ultrafast switching Heatsink thickness: 1.23...1.32mm Mounting: THT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 785 Stücke: Lieferzeit 7-14 Tag (e) |
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STTH8R06DIRG | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220ACIns; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 80A Case: TO220ACIns Max. forward voltage: 1.4V Heatsink thickness: 1.23...1.32mm Reverse recovery time: 25ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 182 Stücke: Lieferzeit 7-14 Tag (e) |
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STTH8R06FP | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220FPAC; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 80A Case: TO220FPAC Max. forward voltage: 1.4V Reverse recovery time: 25ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 254 Stücke: Lieferzeit 7-14 Tag (e) |
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STTH8R06G-TR | STMicroelectronics |
![]() Description: Diode: rectifying; SMD; 600V; 8A; 25ns; D2PAK; Ufmax: 1.4V; Ifsm: 80A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 8A Reverse recovery time: 25ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: D2PAK Max. forward voltage: 1.4V Max. forward impulse current: 80A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 977 Stücke: Lieferzeit 7-14 Tag (e) |
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STTH8S06D | STMicroelectronics |
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Produkt ist nicht verfügbar |
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STTH8S06FP | STMicroelectronics |
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Produkt ist nicht verfügbar |
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STTH8S12D | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 70A; TO220AC; 32ns Semiconductor structure: single diode Max. off-state voltage: 1.2kV Load current: 8A Case: TO220AC Max. forward voltage: 1.75V Max. forward impulse current: 70A Reverse recovery time: 32ns Type of diode: rectifying Kind of package: tube Features of semiconductor devices: ultrafast switching Heatsink thickness: 1.23...1.32mm Mounting: THT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 53 Stücke: Lieferzeit 7-14 Tag (e) |
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STTH8ST06DI | STMicroelectronics |
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auf Bestellung 76 Stücke: Lieferzeit 7-14 Tag (e) |
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STTH8T06DI | STMicroelectronics |
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Produkt ist nicht verfügbar |
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STTH9012TV1 | STMicroelectronics |
![]() ![]() Description: Module: diode; double independent; 1.2kV; If: 45Ax2; ISOTOP; screw Max. forward impulse current: 420A Max. off-state voltage: 1.2kV Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Max. load current: 150A Type of semiconductor module: diode Max. forward voltage: 1.2V Load current: 45A x2 Semiconductor structure: double independent Reverse recovery time: 50ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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STTH9012TV2 | STMicroelectronics |
![]() ![]() Description: Module: diode; double independent; 1.2kV; If: 45Ax2; ISOTOP; screw Max. off-state voltage: 1.2kV Max. load current: 150A Max. forward voltage: 1.2V Load current: 45A x2 Semiconductor structure: double independent Reverse recovery time: 50ns Max. forward impulse current: 420A Electrical mounting: screw Mechanical mounting: screw Type of semiconductor module: diode Case: ISOTOP Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
STTN6050H-12M1Y | STMicroelectronics |
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Produkt ist nicht verfügbar |
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STTS22HTR | STMicroelectronics |
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Produkt ist nicht verfügbar |
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STTS75M2F | STMicroelectronics |
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Produkt ist nicht verfügbar |
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STU10NM60N | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 5A; 70W; IPAK Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 70W Case: IPAK Gate-source voltage: ±25V On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 127 Stücke: Lieferzeit 7-14 Tag (e) |
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STU13NM60N | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 25W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 44A Power dissipation: 25W Case: IPAK Gate-source voltage: ±25V On-state resistance: 0.36Ω Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STU1HN60K3 | STMicroelectronics |
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auf Bestellung 39 Stücke: Lieferzeit 7-14 Tag (e) |
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STU2NK100Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 1000V; 1.16A; 70W; IPAK; ESD Mounting: THT Case: IPAK Power dissipation: 70W Polarisation: unipolar Kind of package: tube Version: ESD Technology: SuperMesh™ Kind of channel: enhancement Gate-source voltage: ±30V Drain-source voltage: 1kV Drain current: 1.16A On-state resistance: 8.5Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 70 Stücke: Lieferzeit 7-14 Tag (e) |
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STU3N62K3 | STMicroelectronics |
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Produkt ist nicht verfügbar |
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STU4N52K3 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 525V; 2A; 45W; IPAK Case: IPAK Mounting: THT Kind of package: tube Drain-source voltage: 525V Drain current: 2A On-state resistance: 2.6Ω Type of transistor: N-MOSFET Power dissipation: 45W Polarisation: unipolar Version: ESD Technology: SuperMESH3™ Kind of channel: enhancement Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 417 Stücke: Lieferzeit 7-14 Tag (e) |
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STU4N80K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Pulsed drain current: 12A Power dissipation: 60W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 10.5nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STU6N95K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 950V; 9A; Idm: 24A; 90W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 950V Drain current: 9A Pulsed drain current: 24A Power dissipation: 90W Case: IPAK Gate-source voltage: ±30V On-state resistance: 1.25Ω Mounting: THT Gate charge: 9.6nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STU7N105K5 | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STU7N65M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 60W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 20A Power dissipation: 60W Case: IPAK Gate-source voltage: ±25V On-state resistance: 1.15Ω Mounting: THT Gate charge: 9nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STU9N60M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 5.5A; Idm: 22A; 60W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5.5A Power dissipation: 60W Case: IPAK Gate-source voltage: ±25V On-state resistance: 780mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 22A Gate charge: 10nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STUSB4500QTR | STMicroelectronics |
![]() Description: IC: interface; GPIO,I2C; USB PD controller; 4.1÷22VDC; reel,tape Type of integrated circuit: interface Kind of integrated circuit: USB PD controller Supply voltage: 4.1...22V DC Case: QFN24 Interface: GPIO; I2C Mounting: SMD Kind of connector: USB 3.0 Kind of package: reel; tape Operating temperature: -40...105°C Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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STUSBCD01BJR | STMicroelectronics |
![]() Description: IC: supervisor circuit; supply voltage monitor; 2.2÷4.5VDC; Ch: 1 Type of integrated circuit: supervisor circuit Kind of integrated circuit: supply voltage monitor Supply voltage: 2.2...4.5V DC Case: flip chip12 Interface: GPIO Mounting: SMD Number of channels: 1 Integrated circuit features: USB charger detection Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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STW10N105K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 1.05kV; 3.78A; Idm: 24A; 130W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.05kV Drain current: 3.78A Pulsed drain current: 24A Power dissipation: 130W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 21.5nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STW10N95K5 | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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STW10NK60Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 156W; TO247 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.7A Power dissipation: 156W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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STW10NK80Z | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 160W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Power dissipation: 160W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: SuperMesh™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 156 Stücke: Lieferzeit 7-14 Tag (e) |
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STW11NK100Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 1000V; 8.3A; 230W; TO247; ESD Mounting: THT Case: TO247 On-state resistance: 1.38Ω Kind of package: tube Drain-source voltage: 1kV Drain current: 8.3A Type of transistor: N-MOSFET Power dissipation: 230W Polarisation: unipolar Version: ESD Technology: MDmesh™ Kind of channel: enhancement Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 644 Stücke: Lieferzeit 7-14 Tag (e) |
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STW11NK90Z | STMicroelectronics |
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auf Bestellung 65 Stücke: Lieferzeit 7-14 Tag (e) |
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STW11NM80 | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 150W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 150W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
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STW120NF10 | STMicroelectronics |
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Produkt ist nicht verfügbar |
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STW12N120K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1200V; 7.6A; 250W; ESD Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 7.6A Power dissipation: 250W Case: TO247 Gate-source voltage: ±30V On-state resistance: 620mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW12N150K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1500V; 4A; 250W; TO247 Mounting: THT Drain current: 4A On-state resistance: 1.6Ω Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Kind of package: tube Version: ESD Technology: MDmesh™ K5 Kind of channel: enhancement Gate-source voltage: ±30V Case: TO247 Drain-source voltage: 1.5kV Anzahl je Verpackung: 1 Stücke |
auf Bestellung 36 Stücke: Lieferzeit 7-14 Tag (e) |
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STW12N170K5 | STMicroelectronics |
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Produkt ist nicht verfügbar |
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STW12NK80Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 6.6A; 190W; TO247; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 6.6A Power dissipation: 190W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.65Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 41 Stücke: Lieferzeit 7-14 Tag (e) |
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STW12NK90Z | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 900V; 11A; 230W; TO247; ESD Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 11A Power dissipation: 230W Case: TO247 Gate-source voltage: ±30V On-state resistance: 880mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1393 Stücke: Lieferzeit 7-14 Tag (e) |
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STW13N80K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 190W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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STW13N95K3 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 950V; 6A; Idm: 40A; 190W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 950V Drain current: 6A Pulsed drain current: 40A Power dissipation: 190W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.68Ω Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 22 Stücke: Lieferzeit 7-14 Tag (e) |
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STW13NK100Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 1000V; 8.2A; 350W; TO247; ESD Mounting: THT Case: TO247 Power dissipation: 350W Polarisation: unipolar Kind of package: tube Version: ESD Technology: SuperMesh™ Kind of channel: enhancement Gate-source voltage: ±30V Drain-source voltage: 1kV Drain current: 8.2A On-state resistance: 0.56Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 32 Stücke: Lieferzeit 7-14 Tag (e) |
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STW13NK60Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 150W; TO247; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 150W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 108 Stücke: Lieferzeit 7-14 Tag (e) |
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STW14NK50Z | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 150W; TO247; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Power dissipation: 150W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 69 Stücke: Lieferzeit 7-14 Tag (e) |
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STW15N80K5 | STMicroelectronics |
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auf Bestellung 11 Stücke: Lieferzeit 7-14 Tag (e) |
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STW15N95K5 | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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STW15NK50Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 8.8A; 160W; TO247; ESD Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 8.8A Power dissipation: 160W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 140 Stücke: Lieferzeit 7-14 Tag (e) |
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STW15NK90Z | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 350W; TO247; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 9.5A Power dissipation: 350W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.4Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 153 Stücke: Lieferzeit 7-14 Tag (e) |
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STW18N60DM2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7.6A; 90W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.6A Power dissipation: 90W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.26Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 140 Stücke: Lieferzeit 7-14 Tag (e) |
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STW18N60M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 8A; 110W Type of transistor: N-MOSFET Technology: MDmesh™ || Plus Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 110W Case: TO247 Gate-source voltage: ±25V On-state resistance: 255mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
STW18N65M5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 710V; 9.4A; Idm: 60A; 110W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 710V Drain current: 9.4A Pulsed drain current: 60A Power dissipation: 110W Case: TO247 Gate-source voltage: ±25V On-state resistance: 198mΩ Mounting: THT Gate charge: 31nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STW18NM60N | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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STW18NM80 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 10.71A; 190W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 10.71A Power dissipation: 190W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
STW19NM60N | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STW20N90K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 13A; Idm: 80A; 250W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 13A Power dissipation: 250W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 40nC Pulsed drain current: 80A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STW20N95DK5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 950V; 11A; Idm: 72A; 250W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 950V Drain current: 11A Power dissipation: 250W Case: TO247 Gate-source voltage: ±30V On-state resistance: 275mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 50.7nC Pulsed drain current: 72A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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STW20N95K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 11A; 250W; TO247 Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 950V Drain current: 11A Power dissipation: 250W Case: TO247 Gate-source voltage: ±30V On-state resistance: 275mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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STW20NK50Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 12.6A; 190W; TO247; ESD Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12.6A Power dissipation: 190W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 361 Stücke: Lieferzeit 7-14 Tag (e) |
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STTH8R04G-TR |
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Hersteller: STMicroelectronics
STTH8R04G-TR SMD universal diodes
STTH8R04G-TR SMD universal diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STTH8R06D | ![]() |
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Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220AC; 25ns
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Load current: 8A
Case: TO220AC
Max. forward voltage: 1.4V
Max. forward impulse current: 80A
Max. load current: 30A
Reverse recovery time: 25ns
Type of diode: rectifying
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.23...1.32mm
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220AC; 25ns
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Load current: 8A
Case: TO220AC
Max. forward voltage: 1.4V
Max. forward impulse current: 80A
Max. load current: 30A
Reverse recovery time: 25ns
Type of diode: rectifying
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.23...1.32mm
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 785 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
46+ | 1.57 EUR |
65+ | 1.12 EUR |
85+ | 0.85 EUR |
106+ | 0.67 EUR |
110+ | 0.65 EUR |
113+ | 0.64 EUR |
STTH8R06DIRG |
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Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220ACIns; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220ACIns
Max. forward voltage: 1.4V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 25ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220ACIns; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220ACIns
Max. forward voltage: 1.4V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 25ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 182 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.26 EUR |
45+ | 1.62 EUR |
53+ | 1.36 EUR |
65+ | 1.1 EUR |
69+ | 1.04 EUR |
72+ | 1 EUR |
STTH8R06FP |
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Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220FPAC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220FPAC
Max. forward voltage: 1.4V
Reverse recovery time: 25ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220FPAC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220FPAC
Max. forward voltage: 1.4V
Reverse recovery time: 25ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 254 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
53+ | 1.36 EUR |
82+ | 0.88 EUR |
107+ | 0.67 EUR |
114+ | 0.63 EUR |
1000+ | 0.61 EUR |
STTH8R06G-TR |
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Hersteller: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 25ns; D2PAK; Ufmax: 1.4V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 1.4V
Max. forward impulse current: 80A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 25ns; D2PAK; Ufmax: 1.4V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 1.4V
Max. forward impulse current: 80A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 977 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
56+ | 1.29 EUR |
67+ | 1.08 EUR |
99+ | 0.73 EUR |
104+ | 0.69 EUR |
500+ | 0.67 EUR |
1000+ | 0.66 EUR |
STTH8S06D |
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Hersteller: STMicroelectronics
STTH8S06D THT universal diodes
STTH8S06D THT universal diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STTH8S06FP |
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Hersteller: STMicroelectronics
STTH8S06FP THT universal diodes
STTH8S06FP THT universal diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STTH8S12D |
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Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 70A; TO220AC; 32ns
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Load current: 8A
Case: TO220AC
Max. forward voltage: 1.75V
Max. forward impulse current: 70A
Reverse recovery time: 32ns
Type of diode: rectifying
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.23...1.32mm
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 70A; TO220AC; 32ns
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Load current: 8A
Case: TO220AC
Max. forward voltage: 1.75V
Max. forward impulse current: 70A
Reverse recovery time: 32ns
Type of diode: rectifying
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.23...1.32mm
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 53 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
53+ | 1.34 EUR |
68+ | 1.06 EUR |
500+ | 0.63 EUR |
STTH8ST06DI |
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Hersteller: STMicroelectronics
STTH8ST06DI THT universal diodes
STTH8ST06DI THT universal diodes
auf Bestellung 76 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.55 EUR |
37+ | 1.97 EUR |
39+ | 1.87 EUR |
250+ | 1.84 EUR |
STTH8T06DI |
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Hersteller: STMicroelectronics
STTH8T06DI THT universal diodes
STTH8T06DI THT universal diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STTH9012TV1 | ![]() |
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Hersteller: STMicroelectronics
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 45Ax2; ISOTOP; screw
Max. forward impulse current: 420A
Max. off-state voltage: 1.2kV
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 150A
Type of semiconductor module: diode
Max. forward voltage: 1.2V
Load current: 45A x2
Semiconductor structure: double independent
Reverse recovery time: 50ns
Anzahl je Verpackung: 1 Stücke
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 45Ax2; ISOTOP; screw
Max. forward impulse current: 420A
Max. off-state voltage: 1.2kV
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 150A
Type of semiconductor module: diode
Max. forward voltage: 1.2V
Load current: 45A x2
Semiconductor structure: double independent
Reverse recovery time: 50ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 33.46 EUR |
STTH9012TV2 | ![]() |
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Hersteller: STMicroelectronics
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 45Ax2; ISOTOP; screw
Max. off-state voltage: 1.2kV
Max. load current: 150A
Max. forward voltage: 1.2V
Load current: 45A x2
Semiconductor structure: double independent
Reverse recovery time: 50ns
Max. forward impulse current: 420A
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Case: ISOTOP
Anzahl je Verpackung: 1 Stücke
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 45Ax2; ISOTOP; screw
Max. off-state voltage: 1.2kV
Max. load current: 150A
Max. forward voltage: 1.2V
Load current: 45A x2
Semiconductor structure: double independent
Reverse recovery time: 50ns
Max. forward impulse current: 420A
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Case: ISOTOP
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STTN6050H-12M1Y |
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Hersteller: STMicroelectronics
STTN6050H-12M1Y SMD/THT thyristors
STTN6050H-12M1Y SMD/THT thyristors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STTS22HTR |
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Hersteller: STMicroelectronics
STTS22HTR Temperature transducers
STTS22HTR Temperature transducers
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STTS75M2F |
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Hersteller: STMicroelectronics
STTS75M2F Temperature transducers
STTS75M2F Temperature transducers
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STU10NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 5A; 70W; IPAK
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 5A; 70W; IPAK
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 127 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
36+ | 2.03 EUR |
39+ | 1.84 EUR |
52+ | 1.4 EUR |
55+ | 1.32 EUR |
STU13NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 25W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 25W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 25W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 25W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STU1HN60K3 |
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Hersteller: STMicroelectronics
STU1HN60K3 THT N channel transistors
STU1HN60K3 THT N channel transistors
auf Bestellung 39 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
39+ | 1.83 EUR |
57+ | 1.26 EUR |
157+ | 0.46 EUR |
500+ | 0.27 EUR |
STU2NK100Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1.16A; 70W; IPAK; ESD
Mounting: THT
Case: IPAK
Power dissipation: 70W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Drain-source voltage: 1kV
Drain current: 1.16A
On-state resistance: 8.5Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1.16A; 70W; IPAK; ESD
Mounting: THT
Case: IPAK
Power dissipation: 70W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Drain-source voltage: 1kV
Drain current: 1.16A
On-state resistance: 8.5Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 70 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.47 EUR |
70+ | 1.02 EUR |
72+ | 0.99 EUR |
STU3N62K3 |
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Hersteller: STMicroelectronics
STU3N62K3 THT N channel transistors
STU3N62K3 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STU4N52K3 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 525V; 2A; 45W; IPAK
Case: IPAK
Mounting: THT
Kind of package: tube
Drain-source voltage: 525V
Drain current: 2A
On-state resistance: 2.6Ω
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
Version: ESD
Technology: SuperMESH3™
Kind of channel: enhancement
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 525V; 2A; 45W; IPAK
Case: IPAK
Mounting: THT
Kind of package: tube
Drain-source voltage: 525V
Drain current: 2A
On-state resistance: 2.6Ω
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
Version: ESD
Technology: SuperMESH3™
Kind of channel: enhancement
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 417 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
143+ | 0.5 EUR |
205+ | 0.35 EUR |
217+ | 0.33 EUR |
STU4N80K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STU6N95K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 9A; Idm: 24A; 90W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 9A
Pulsed drain current: 24A
Power dissipation: 90W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
Mounting: THT
Gate charge: 9.6nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 9A; Idm: 24A; 90W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 9A
Pulsed drain current: 24A
Power dissipation: 90W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
Mounting: THT
Gate charge: 9.6nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STU7N105K5 |
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Hersteller: STMicroelectronics
STU7N105K5 THT N channel transistors
STU7N105K5 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STU7N65M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 1.15Ω
Mounting: THT
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 1.15Ω
Mounting: THT
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STU9N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5.5A; Idm: 22A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.5A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 780mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 10nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5.5A; Idm: 22A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.5A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 780mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 10nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STUSB4500QTR |
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Hersteller: STMicroelectronics
Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO,I2C; USB PD controller; 4.1÷22VDC; reel,tape
Type of integrated circuit: interface
Kind of integrated circuit: USB PD controller
Supply voltage: 4.1...22V DC
Case: QFN24
Interface: GPIO; I2C
Mounting: SMD
Kind of connector: USB 3.0
Kind of package: reel; tape
Operating temperature: -40...105°C
Anzahl je Verpackung: 4000 Stücke
Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO,I2C; USB PD controller; 4.1÷22VDC; reel,tape
Type of integrated circuit: interface
Kind of integrated circuit: USB PD controller
Supply voltage: 4.1...22V DC
Case: QFN24
Interface: GPIO; I2C
Mounting: SMD
Kind of connector: USB 3.0
Kind of package: reel; tape
Operating temperature: -40...105°C
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STUSBCD01BJR |
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Hersteller: STMicroelectronics
Category: Integrated circuits - others
Description: IC: supervisor circuit; supply voltage monitor; 2.2÷4.5VDC; Ch: 1
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: supply voltage monitor
Supply voltage: 2.2...4.5V DC
Case: flip chip12
Interface: GPIO
Mounting: SMD
Number of channels: 1
Integrated circuit features: USB charger detection
Anzahl je Verpackung: 5000 Stücke
Category: Integrated circuits - others
Description: IC: supervisor circuit; supply voltage monitor; 2.2÷4.5VDC; Ch: 1
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: supply voltage monitor
Supply voltage: 2.2...4.5V DC
Case: flip chip12
Interface: GPIO
Mounting: SMD
Number of channels: 1
Integrated circuit features: USB charger detection
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STW10N105K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 3.78A; Idm: 24A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 3.78A
Pulsed drain current: 24A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 21.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 3.78A; Idm: 24A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 3.78A
Pulsed drain current: 24A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 21.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STW10N95K5 |
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Hersteller: STMicroelectronics
STW10N95K5 THT N channel transistors
STW10N95K5 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STW10NK60Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 156W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Power dissipation: 156W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 156W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Power dissipation: 156W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.43 EUR |
20+ | 3.58 EUR |
27+ | 2.65 EUR |
STW10NK80Z | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 160W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: SuperMesh™
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 160W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: SuperMesh™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 156 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.13 EUR |
35+ | 2.09 EUR |
37+ | 1.97 EUR |
STW11NK100Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 8.3A; 230W; TO247; ESD
Mounting: THT
Case: TO247
On-state resistance: 1.38Ω
Kind of package: tube
Drain-source voltage: 1kV
Drain current: 8.3A
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Version: ESD
Technology: MDmesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 8.3A; 230W; TO247; ESD
Mounting: THT
Case: TO247
On-state resistance: 1.38Ω
Kind of package: tube
Drain-source voltage: 1kV
Drain current: 8.3A
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Version: ESD
Technology: MDmesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 644 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 7.04 EUR |
32+ | 2.26 EUR |
34+ | 2.13 EUR |
STW11NK90Z |
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Hersteller: STMicroelectronics
STW11NK90Z THT N channel transistors
STW11NK90Z THT N channel transistors
auf Bestellung 65 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.42 EUR |
28+ | 2.6 EUR |
30+ | 2.46 EUR |
STW11NM80 | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 150W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 150W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.07 EUR |
22+ | 3.35 EUR |
23+ | 3.16 EUR |
STW120NF10 |
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Hersteller: STMicroelectronics
STW120NF10 THT N channel transistors
STW120NF10 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STW12N120K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1200V; 7.6A; 250W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 7.6A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1200V; 7.6A; 250W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 7.6A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STW12N150K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1500V; 4A; 250W; TO247
Mounting: THT
Drain current: 4A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: MDmesh™ K5
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: TO247
Drain-source voltage: 1.5kV
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1500V; 4A; 250W; TO247
Mounting: THT
Drain current: 4A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: MDmesh™ K5
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: TO247
Drain-source voltage: 1.5kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.58 EUR |
10+ | 7.38 EUR |
11+ | 6.98 EUR |
STW12N170K5 |
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Hersteller: STMicroelectronics
STW12N170K5 THT N channel transistors
STW12N170K5 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STW12NK80Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6.6A; 190W; TO247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6.6A; 190W; TO247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.68 EUR |
33+ | 2.17 EUR |
35+ | 2.04 EUR |
STW12NK90Z | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 11A; 230W; TO247; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 230W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 880mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 11A; 230W; TO247; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 230W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 880mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1393 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.32 EUR |
27+ | 2.66 EUR |
29+ | 2.52 EUR |
1020+ | 2.42 EUR |
STW13N80K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 23.84 EUR |
5+ | 14.3 EUR |
12+ | 5.96 EUR |
25+ | 3.79 EUR |
STW13N95K3 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 6A; Idm: 40A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 6A
Pulsed drain current: 40A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 6A; Idm: 40A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 6A
Pulsed drain current: 40A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.85 EUR |
15+ | 4.9 EUR |
16+ | 4.65 EUR |
300+ | 4.46 EUR |
STW13NK100Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 8.2A; 350W; TO247; ESD
Mounting: THT
Case: TO247
Power dissipation: 350W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Drain-source voltage: 1kV
Drain current: 8.2A
On-state resistance: 0.56Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 8.2A; 350W; TO247; ESD
Mounting: THT
Case: TO247
Power dissipation: 350W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Drain-source voltage: 1kV
Drain current: 8.2A
On-state resistance: 0.56Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 32 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.8 EUR |
10+ | 7.26 EUR |
11+ | 6.86 EUR |
STW13NK60Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 150W; TO247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 150W; TO247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 108 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.49 EUR |
33+ | 2.2 EUR |
37+ | 1.97 EUR |
43+ | 1.67 EUR |
46+ | 1.57 EUR |
STW14NK50Z | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 150W; TO247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 150W; TO247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 69 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.35 EUR |
36+ | 2 EUR |
38+ | 1.9 EUR |
STW15N80K5 |
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Hersteller: STMicroelectronics
STW15N80K5 THT N channel transistors
STW15N80K5 THT N channel transistors
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.51 EUR |
30+ | 4.83 EUR |
STW15N95K5 |
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Hersteller: STMicroelectronics
STW15N95K5 THT N channel transistors
STW15N95K5 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STW15NK50Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.8A; 160W; TO247; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.8A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.8A; 160W; TO247; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.8A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 140 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.42 EUR |
35+ | 2.09 EUR |
37+ | 1.97 EUR |
120+ | 1.9 EUR |
STW15NK90Z | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 350W; TO247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.5A
Power dissipation: 350W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 350W; TO247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.5A
Power dissipation: 350W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 153 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.31 EUR |
18+ | 3.98 EUR |
STW18N60DM2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7.6A; 90W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Power dissipation: 90W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7.6A; 90W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Power dissipation: 90W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 140 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.93 EUR |
32+ | 2.26 EUR |
34+ | 2.12 EUR |
120+ | 2.06 EUR |
STW18N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 8A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 110W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 255mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 8A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 110W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 255mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STW18N65M5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 9.4A; Idm: 60A; 110W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 9.4A
Pulsed drain current: 60A
Power dissipation: 110W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 198mΩ
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 9.4A; Idm: 60A; 110W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 9.4A
Pulsed drain current: 60A
Power dissipation: 110W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 198mΩ
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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STW18NM60N |
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Hersteller: STMicroelectronics
STW18NM60N THT N channel transistors
STW18NM60N THT N channel transistors
Produkt ist nicht verfügbar
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STW18NM80 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.71A; 190W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.71A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.71A; 190W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.71A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STW19NM60N |
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Hersteller: STMicroelectronics
STW19NM60N THT N channel transistors
STW19NM60N THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STW20N90K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 13A; Idm: 80A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 13A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
Pulsed drain current: 80A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 13A; Idm: 80A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 13A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
Pulsed drain current: 80A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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Stück im Wert von UAH
STW20N95DK5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 11A; Idm: 72A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 11A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 275mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 50.7nC
Pulsed drain current: 72A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 11A; Idm: 72A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 11A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 275mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 50.7nC
Pulsed drain current: 72A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STW20N95K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 11A; 250W; TO247
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 11A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 275mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 11A; 250W; TO247
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 11A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 275mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STW20NK50Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.6A; 190W; TO247; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.6A; 190W; TO247; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 361 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.19 EUR |
35+ | 2.09 EUR |
37+ | 1.97 EUR |